CN109729758A - 动态放大电路 - Google Patents

动态放大电路 Download PDF

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Publication number
CN109729758A
CN109729758A CN201780001051.8A CN201780001051A CN109729758A CN 109729758 A CN109729758 A CN 109729758A CN 201780001051 A CN201780001051 A CN 201780001051A CN 109729758 A CN109729758 A CN 109729758A
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China
Prior art keywords
driving
control signal
capacitor
resistor
time period
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CN201780001051.8A
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CN109729758B (zh
Inventor
范硕
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45295—Pl types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/129—Indexing scheme relating to amplifiers there being a feedback over the complete amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45376—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete resistors as shunts between collectors or drains
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45396—Indexing scheme relating to differential amplifiers the AAC comprising one or more switches
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

一种动态放大电路，能够提供稳定的增益，包括：第一驱动电路(310)，用于根据第一控制信号和第一驱动电流，产生第一驱动电压；第二驱动电路(320)，用于根据所述第一驱动电压和第二驱动电压，产生第一驱动信号；第三驱动电路(330)，用于根据所述第一控制信号和所述第一驱动信号，产生第二控制信号；动态放大器DA(340)，包括第一支路(101)和第二支路(102)，所述第一支路(101)包括第一电容器(120)，所述第二支路(102)包括第二电容器，所述第一支路(101)和所述第二支路(102)通过第一电阻器(150)和第二电阻器(160)连接；所述DA(340)，用于通过所述第一控制信号和所述第二控制信号控制所述DA(340)的工作状态，其中，所述DA(340)处于放大阶段的时长跟所述第一电阻器(150)的电阻值和所述第一电容器(120)的电容值的乘积成正比。

Description

PCT国内申请，说明书已公开。

Claims (17)

  1. PCT国内申请，权利要求书已公开。
CN201780001051.8A 2017-08-30 2017-08-30 动态放大电路 Active CN109729758B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/099594 WO2019041156A1 (zh) 2017-08-30 2017-08-30 动态放大电路

Publications (2)

Publication Number Publication Date
CN109729758A true CN109729758A (zh) 2019-05-07
CN109729758B CN109729758B (zh) 2023-05-26

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CN201780001051.8A Active CN109729758B (zh) 2017-08-30 2017-08-30 动态放大电路

Country Status (4)

Country Link
US (1) US10693423B2 (zh)
EP (1) EP3477863B1 (zh)
CN (1) CN109729758B (zh)
WO (1) WO2019041156A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI761274B (zh) * 2021-08-04 2022-04-11 瑞昱半導體股份有限公司 電荷引導式放大電路及其控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202645A (en) * 1991-12-12 1993-04-13 National Semiconductor Corporation Stabilized transient response of a cascode CMOS amplifier
EP0621686A2 (en) * 1993-04-19 1994-10-26 Nippon Telegraph And Telephone Corporation Amplifier
US6653895B1 (en) * 2002-06-12 2003-11-25 Texas Instruments Incorporated Gain-boost nulling amplifier for auto-zero circuit
CN101471636A (zh) * 2007-12-26 2009-07-01 财团法人工业技术研究院 可变增益高动态范围放大器
US20110133711A1 (en) * 2009-12-09 2011-06-09 Rohm Co., Ltd. Semiconductor device and switching regulator using the device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4473516B2 (ja) * 2003-03-25 2010-06-02 株式会社デンソー 力学量センサ
CN101515798A (zh) * 2008-02-18 2009-08-26 瑞昱半导体股份有限公司 动态电压产生装置与其使用方法
CN101364119A (zh) * 2008-07-07 2009-02-11 武汉大学 宽动态范围低压差线性稳压器
US8633764B2 (en) * 2011-06-10 2014-01-21 International Business Machines Corporation Restoring output common-mode of amplifier via capacitive coupling
US8964825B2 (en) * 2012-02-17 2015-02-24 International Business Machines Corporation Analog signal current integrators with tunable peaking function
CN205646432U (zh) * 2016-03-08 2016-10-12 西安绿竹电子科技有限公司 一种半导体激光器驱动电路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202645A (en) * 1991-12-12 1993-04-13 National Semiconductor Corporation Stabilized transient response of a cascode CMOS amplifier
EP0621686A2 (en) * 1993-04-19 1994-10-26 Nippon Telegraph And Telephone Corporation Amplifier
US6653895B1 (en) * 2002-06-12 2003-11-25 Texas Instruments Incorporated Gain-boost nulling amplifier for auto-zero circuit
CN101471636A (zh) * 2007-12-26 2009-07-01 财团法人工业技术研究院 可变增益高动态范围放大器
US20110133711A1 (en) * 2009-12-09 2011-06-09 Rohm Co., Ltd. Semiconductor device and switching regulator using the device

Also Published As

Publication number Publication date
US20190068130A1 (en) 2019-02-28
WO2019041156A1 (zh) 2019-03-07
EP3477863A4 (en) 2019-05-08
US10693423B2 (en) 2020-06-23
EP3477863A1 (en) 2019-05-01
CN109729758B (zh) 2023-05-26
EP3477863B1 (en) 2022-05-04

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