CN109643975A - 动态放大电路 - Google Patents

动态放大电路 Download PDF

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Publication number
CN109643975A
CN109643975A CN201780000805.8A CN201780000805A CN109643975A CN 109643975 A CN109643975 A CN 109643975A CN 201780000805 A CN201780000805 A CN 201780000805A CN 109643975 A CN109643975 A CN 109643975A
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China
Prior art keywords
transistor
signal
control signal
voltage
control
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CN201780000805.8A
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CN109643975B (zh
Inventor
范硕
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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Publication of CN109643975A publication Critical patent/CN109643975A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/297—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising a capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/312—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45134—Indexing scheme relating to differential amplifiers the whole differential amplifier together with other coupled stages being fully differential realised
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45726—Indexing scheme relating to differential amplifiers the LC comprising more than one switch, which are not cross coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

本申请公开了一种动态放大电路，包括：第一驱动电路，用于接收该第一控制信号，产生第一电压信号和第二电压信号；第二驱动电路，用于接收第一电压信号和第二电压信号，产生该第一驱动信号；第三驱动电路，用于接收该第一控制信号和该第一驱动信号，产生第二控制信号；动态放大器DA，用于根据该第一控制信号和该第二控制信号分别控制该第一控制开关和第二控制开关的闭合和断开；在第一时间段，第一控制信号为高电平，第二驱动为低电平；在第二时间段内，第一控制信号为低电平，该第二控制信号为高电平；在第三时间段内，该第一控制信号为低电平，该第二控制信号为低电平；其中，该第二时间段的时长跟该晶体管在饱和区的跨导成反比。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201780000805.8A 2017-07-26 2017-07-26 动态放大电路 Active CN109643975B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/094529 WO2019019058A1 (zh) 2017-07-26 2017-07-26 动态放大电路

Publications (2)

Publication Number Publication Date
CN109643975A true CN109643975A (zh) 2019-04-16
CN109643975B CN109643975B (zh) 2023-06-16

Family

ID=65038780

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780000805.8A Active CN109643975B (zh) 2017-07-26 2017-07-26 动态放大电路

Country Status (4)

Country Link
US (1) US10476443B2 (zh)
EP (1) EP3461003B1 (zh)
CN (1) CN109643975B (zh)
WO (1) WO2019019058A1 (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030011408A1 (en) * 2001-07-06 2003-01-16 Nec Corporation Driver circuit
CN1741375A (zh) * 2004-08-26 2006-03-01 瑞昱半导体股份有限公司 可动态调整供给电压的放大电路
US20060290420A1 (en) * 2005-06-27 2006-12-28 Linear Technology Corporation Wide dynamic range switching variable gain amplifier and control
CN101405934A (zh) * 2006-03-22 2009-04-08 高通股份有限公司 功率放大器中的动态偏置控制
CN101471636A (zh) * 2007-12-26 2009-07-01 财团法人工业技术研究院 可变增益高动态范围放大器
JP2011124854A (ja) * 2009-12-11 2011-06-23 Fujitsu Ltd バイアス回路及びそれを有する増幅回路
CN106797220A (zh) * 2016-10-25 2017-05-31 深圳市汇顶科技股份有限公司 Dac电容阵列及模数转换器、降低模数转换器功耗的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829993B2 (en) 2012-10-30 2014-09-09 Eta Devices, Inc. Linearization circuits and methods for multilevel power amplifier systems
US9819314B1 (en) * 2017-01-31 2017-11-14 Board Of Regents, The University Of Texas System Method and circuit for PVT stabilization of dynamic amplifiers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030011408A1 (en) * 2001-07-06 2003-01-16 Nec Corporation Driver circuit
CN1741375A (zh) * 2004-08-26 2006-03-01 瑞昱半导体股份有限公司 可动态调整供给电压的放大电路
US20060290420A1 (en) * 2005-06-27 2006-12-28 Linear Technology Corporation Wide dynamic range switching variable gain amplifier and control
CN101405934A (zh) * 2006-03-22 2009-04-08 高通股份有限公司 功率放大器中的动态偏置控制
CN101471636A (zh) * 2007-12-26 2009-07-01 财团法人工业技术研究院 可变增益高动态范围放大器
JP2011124854A (ja) * 2009-12-11 2011-06-23 Fujitsu Ltd バイアス回路及びそれを有する増幅回路
CN106797220A (zh) * 2016-10-25 2017-05-31 深圳市汇顶科技股份有限公司 Dac电容阵列及模数转换器、降低模数转换器功耗的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HAI HUANG,SUDIPTA SARKAR,BRIAN ELIES,YUN CHIU: "28.4 A 12b 330MS/s Pipelined-SAR ADC withPVT-stabilized dynamic amplifier achieving 1db SNDR variation", 《IEEE》 *

Also Published As

Publication number Publication date
EP3461003A4 (en) 2019-04-24
EP3461003A1 (en) 2019-03-27
US10476443B2 (en) 2019-11-12
EP3461003B1 (en) 2020-10-28
CN109643975B (zh) 2023-06-16
WO2019019058A1 (zh) 2019-01-31
US20190036491A1 (en) 2019-01-31

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