CN109698145B - Nozzle standby device, liquid processing device, operation method thereof and storage medium - Google Patents
Nozzle standby device, liquid processing device, operation method thereof and storage medium Download PDFInfo
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- CN109698145B CN109698145B CN201811234661.5A CN201811234661A CN109698145B CN 109698145 B CN109698145 B CN 109698145B CN 201811234661 A CN201811234661 A CN 201811234661A CN 109698145 B CN109698145 B CN 109698145B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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Abstract
The invention provides a nozzle standby device. In the nozzle housing portion, when the solvent is sucked into the tip portion of the nozzle to form a liquid layer of the solvent, the solvent supplied to the nozzle housing portion can be saved. The nozzle is placed in standby in the nozzle housing portion, the solvent is supplied at a first flow rate from the solvent outlet, a liquid film is formed so as to close the outlet of the nozzle, and then the solvent is supplied at a second flow rate smaller than the first flow rate. The second flow rate is a flow rate at which the solvent can be kept in a state where the outlet of the nozzle is closed by the solvent, and a liquid film formed at the outlet of the nozzle is brought into contact with the solvent, thereby sucking the solvent into the tip of the nozzle by surface tension to form a liquid layer of the solvent. Therefore, it is not necessary to form a liquid pool of the solvent in the nozzle housing portion, and the supply flow rate is reduced from the first flow rate to the second flow rate during the supply of the solvent from the solvent outlet, so that the solvent can be saved.
Description
Technical Field
The present invention relates to a technique for forming a liquid layer by sucking a solvent into a tip portion of a nozzle by waiting the nozzle for discharging a processing liquid that is solidified by drying in a nozzle housing portion.
Background
In the manufacturing process of a semiconductor device, there is a process of applying a resist liquid to a substrate in order to form a resist pattern. The resist liquid is applied, for example, by discharging the resist liquid from a nozzle to a substantially central portion of a semiconductor wafer (hereinafter referred to as a "wafer") held by a spin chuck while rotating the wafer.
The resist solution contains a component of a resist film formed of an organic material and a solvent for the component, for example, a diluent (thin), and has a property of being easily dried when in contact with the atmosphere, and may be changed in concentration or the like due to drying. Therefore, a method is employed in which an air layer and a solvent layer (liquid layer of solvent) are formed outside the resist liquid layer inside the tip of the nozzle to prevent the resist liquid inside the nozzle from drying. For example, after the resist liquid in the nozzle is simulated to be discharged, air is sucked into the nozzle to form an air layer, and then the tip portion of the nozzle is immersed in a solvent and the solvent is sucked into the nozzle, whereby the method is performed.
However, when a resist liquid having a relatively high viscosity such as a three-dimensional NAND type resist film is used, the resist liquid tends to adhere to and accumulate on the inner wall of the discharge hole, and thus clogging tends to occur in the discharge hole. Therefore, for example, the resist liquid overflows in the next simulation of discharging the resist liquid, and there is a possibility that the tip of the nozzle is contaminated. If the drain hole is enlarged, clogging of the resist liquid can be improved, but the solvent becomes difficult to accumulate in the cleaning chamber, and the flow rate of the solvent has to be increased to form the liquid accumulation in the cleaning chamber, which has the disadvantage that the consumption amount of the solvent increases.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2010-62352
Patent document 2: japanese patent application laid-open No. 2017-92239 (0069, 0070 et al)
Disclosure of Invention
Technical problem to be solved by the invention
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a technique for enabling a nozzle for discharging a processing liquid to stand by in a nozzle housing portion, and for enabling the solvent to be saved from being supplied to the nozzle housing portion when the solvent is sucked into the tip portion of the nozzle to form a liquid layer of the solvent.
Technical scheme for solving technical problems
Accordingly, the present invention is a nozzle standby apparatus for: a nozzle for discharging a treatment liquid which is solidified by drying is put on standby, a solvent is sucked into the tip of the nozzle to form a liquid layer of the solvent,
the nozzle standby device is characterized by comprising:
a nozzle housing part including an inner peripheral surface formed so as to surround a tip end of the nozzle, and a housing part discharge port being formed so as to face an outlet of the nozzle;
a solvent outlet opening in the nozzle housing, the solvent outlet being formed so as to guide the solvent discharged from the solvent outlet along an inner peripheral surface of the nozzle housing and discharge the solvent from the housing discharge port;
and a solvent supply unit configured to supply a solvent to the solvent liquid outlet at a first flow rate when forming a liquid layer of the solvent at the tip end portion of the nozzle, form a liquid film by the solvent so as to close the outlet of the nozzle, and supply the solvent to the solvent liquid outlet at a second flow rate smaller than the first flow rate, wherein the second flow rate is a flow rate at which a state in which the outlet of the nozzle is closed by the solvent can be maintained.
The liquid treatment apparatus of the present invention is characterized by comprising:
a substrate holding portion for holding a substrate;
a nozzle for discharging a processing liquid that is solidified by drying, onto a surface of a substrate held by the substrate holding portion;
the nozzle standby device; and
and a suction mechanism for sucking the solvent toward the upstream side of the flow path in the nozzle standby by the nozzle standby device.
The operation method of the liquid treatment apparatus of the present invention is characterized by comprising:
a step of discharging a processing liquid, which is cured by drying, from a nozzle onto the surface of the substrate held by the substrate holding section;
next, the step of placing the nozzle in standby in a nozzle housing portion including an inner peripheral surface formed so as to surround a tip end portion of the nozzle, the housing portion having a housing portion discharge port formed so as to face an outlet of the nozzle;
a step of discharging the treatment liquid from an outlet of the nozzle standing by in the nozzle housing section, and discharging the treatment liquid from a housing section discharge port facing the outlet of the nozzle;
next, discharging the solvent from the solvent outlet opening in the nozzle housing at a first flow rate, guiding the discharged solvent along the inner peripheral surface of the nozzle housing, and forming a liquid film by using the solvent so as to close the outlet of the nozzle; and
and discharging the solvent from the solvent outlet opening in the nozzle housing portion at a second flow rate smaller than the first flow rate, the second flow rate being a flow rate at which the outlet of the nozzle can be maintained in a state of being closed by the solvent, and guiding the discharged solvent along the inner peripheral surface of the nozzle housing portion.
The storage medium of the present invention stores a computer program for use in a liquid processing apparatus that ejects a processing liquid that is solidified by drying from a nozzle onto a surface of a substrate held in a substrate holding portion,
the storage medium is characterized in that:
the computer program is programmed with a set of steps to execute the method of operating the liquid processing apparatus.
Effects of the invention
According to the present invention, when the solvent is sucked into the nozzle housing portion to form a liquid layer of the solvent at the tip portion of the nozzle for discharging the processing liquid, the solvent is supplied at a first flow rate from the solvent outlet of the nozzle housing portion, and after a liquid film is formed so as to close the outlet of the nozzle, the solvent is supplied at a second flow rate smaller than the first flow rate. The second flow rate is a flow rate at which the solvent can be kept in a state where the outlet of the nozzle is closed by the solvent, and a liquid film formed at the outlet of the nozzle contacts the solvent, thereby sucking the solvent into the tip of the nozzle by surface tension to form a liquid layer of the solvent. Therefore, it is not necessary to form a liquid pool of the solvent in the nozzle housing portion, and the supply flow rate is reduced from the first flow rate to the second flow rate during the supply of the solvent from the solvent outlet, so that the solvent can be saved.
Drawings
FIG. 1 is a longitudinal sectional side view showing an embodiment of a liquid processing apparatus provided with a nozzle standby apparatus according to the present invention.
Fig. 2 is a perspective view schematically showing a liquid processing apparatus.
Fig. 3 is a perspective view showing a nozzle unit provided in the liquid processing apparatus.
Fig. 4 is a longitudinal sectional side view showing a part of the coating nozzle and the standby unit provided in the nozzle unit.
Fig. 5 is a longitudinal sectional side view showing the nozzle unit and the standby unit.
FIG. 6 is a longitudinal sectional side view showing the operation of the liquid treatment apparatus.
FIG. 7 is a longitudinal sectional side view showing the operation of the liquid treatment apparatus.
Description of the reference numerals
1. Liquid treatment device
2. Rotary chuck
3. Nozzle unit
32. Moving mechanism
41. Coating nozzle
42. Solvent nozzle
46. Flow path
47. An outlet
5. Standby unit
51. Nozzle housing part
52. Diameter-reducing part
53. Discharge outlet of storage part
56. Solvent outlet
57. Solvent supply path
59. Flow rate adjusting part
6. Control unit
81. Liquid treatment layer
82. Air layer
83. Liquid layer of solvent (solvent layer)
VA back suction valve
W semiconductor wafer.
Detailed Description
An embodiment of the present invention will be described below with reference to the drawings.
Fig. 1 and 2 are a longitudinal cross-sectional side view and a perspective view of a liquid treatment apparatus 1 according to an embodiment of the present invention. The liquid processing apparatus 1 includes a spin chuck 2 as a substrate holding portion that sucks and horizontally holds a central portion of the back surface of the wafer W. The spin chuck 2 is driven by a driving mechanism 22 through a driving shaft 21, is rotatable and liftable about a vertical axis while holding the wafer W, and is set such that the center of the wafer W is located on the rotation shaft. A cover (cup) 23 having an opening 231 on the upper side is provided around the spin chuck 2 so as to surround the wafer W on the spin chuck 2, and an inclined portion 232 inclined inward is formed on the upper end side of the side peripheral surface of the cover 23.
A liquid receiving portion 24 having a concave shape, for example, is provided on the bottom side of the cover 23. The liquid receiving portion 24 is divided by a partition wall 241 into an outer region and an inner region over the entire periphery thereof below the peripheral edge of the wafer W, a liquid discharge port 25 for discharging the deposited resist and the like is provided at the bottom of the outer region, and an exhaust port 26 for discharging the processing atmosphere is provided at the bottom of the inner region.
The coating nozzle 41 of the nozzle unit 3 discharges the coating liquid to the substantially center of the wafer surface held by the spin chuck 2. As shown in fig. 3, the nozzle unit 3 is configured by integrally fixing a plurality of (e.g., 10) coating nozzles 41 for discharging the processing liquid and, for example, one solvent nozzle 42 for discharging the solvent that is the processing liquid to the common support portion 31. The treatment liquid in this example is dried and solidified, and the solvent is, for example, a diluent. Examples of the processing liquid include, for example, a resist liquid having a viscosity of 50cp to 1000cp used for manufacturing a three-dimensional NAND memory. The coating nozzle 41 may be referred to as nozzles 41 and 42 below with respect to the nozzle of the present invention, respectively, as the coating nozzle 41 and the solvent nozzle 42.
The coating nozzle 41 and the solvent nozzle 42 are configured in the same manner, for example, and are fixed to the support 31 so as to be arranged on a straight line along the lateral direction (Y-axis direction) of the liquid processing apparatus 1. For example, as shown in fig. 4 by taking the coating nozzle 41 as an example, the nozzles 41 and 42 include: a base end portion 43 connected to the support portion 31; a cylindrical portion 44 extending in the vertical direction below the base end portion 43; and a substantially conical tip 45 having a diameter reduced downward from the cylindrical portion 44. Inside the base end portion 43, the cylindrical portion 44, and the tip end portion 45, a flow path 46 for the processing liquid extending in the vertical direction is formed, and the flow path 46 is opened at the tip end side below the nozzle as an outlet 47 for the processing liquid. The outlet 47 is formed in a circular shape, for example, in a planar shape.
The coating nozzle 41 and the solvent nozzle 42 are supported by a common support portion 31, and are movable by a moving mechanism 32 between a processing position for supplying a processing liquid or the like to the wafer W on the spin chuck 2 and a standby position stored in a standby unit 5 described later. For example, the moving mechanism 32 includes: a horizontal moving portion 34 guided by a guide rail 33 extending in the lateral direction (Y-axis direction) in fig. 2; an arm 35 extending horizontally from the horizontal moving section 34 and being lifted up and down by a lifting mechanism, not shown, with respect to the horizontal moving section 34, the support section 31 being provided at the tip of the arm 35.
As shown in fig. 1, each of the coating nozzles 41 is connected to, for example, different processing liquid supply sources 412 via different processing liquid supply paths 411. Each processing liquid supply path 411 is provided with a flow rate adjustment unit 413 including a back suction Valve (VA), an on-off valve, a mass flow controller, and the like, for example, in the middle of each processing liquid supply path. The treatment liquid supply path 411 is made of, for example, a flexible material, and does not interfere with the operation of the nozzle unit 3 when the nozzle unit 3 moves.
The suck-back valve VA serves to suck back (suck back) the front end surface of the processing liquid remaining in the flow path 46 of the application nozzle 41 toward the processing liquid supply path 411 when the corresponding application nozzle 41 stops discharging the processing liquid, and also serves as the suction mechanism of the present invention. The suck-back valve VA has, for example, a bellows (bellows) having a suction chamber formed therein and communicating with the treatment liquid supply path 411, and sucks the treatment liquid in the coating nozzle 41 toward the treatment liquid supply path 411 by expanding the bellows to negative pressure in the suction chamber. The suck-back valve VA is provided with a needle roller (needle), and the distance by which the front end liquid surface of the processing liquid retreats is adjusted by changing the maximum volume of the suction chamber with the needle roller.
The flow rate adjusting unit 413 is configured to adjust the flow rate of the processing liquid, and the processing liquid supply source 412 stores, for example, different types of resist liquids or different types of resist liquids having the same type and different viscosities, such as a resist liquid for a resist film of a three-dimensional NAND memory, as the processing liquid. The solvent nozzle 42 is connected to a solvent supply source 422 via a solvent supply path 421, and a flow rate adjustment portion 423 having an on-off valve, a mass flow controller, and the like is provided in the solvent supply path 421. The driving of the suck-back valve VA and the flow rate adjusting units 413 and 423 is controlled based on a control signal from the control unit 6 described later.
For example, as shown in fig. 1 and 2, a standby unit 5 constituting a nozzle standby device is provided on the outer surface of the cover 23. In fig. 1, the nozzle unit 3 and the standby unit 5 are shown in a larger and simplified manner than practical for convenience of illustration. For example, as shown in fig. 5, in the standby unit 5, 11 nozzles, which are the number of nozzles provided in the tubular nozzle housing portions 51 that individually house the respective coating nozzles 41 and solvent nozzles 42, are arranged in a straight line in the Y-axis direction, for example.
The nozzle housing 51 for the coating nozzle 41 is constructed in the same manner, and the nozzle housing 51 is described with reference to fig. 4. Fig. 4 shows the leftmost nozzle housing 51 in fig. 5. In the nozzle housing portion 51, a portion housing the cylindrical portion 44 and the tip portion 45 of the application nozzle 41 is, for example, cylindrical, and a lower portion side of the nozzle housing portion 51 is, for example, configured as a reduced diameter portion 52 having a smaller inner diameter as going downward. The lower end of the nozzle housing 51 communicates with a liquid discharge chamber 54 shared by the nozzle housings 51 via a housing discharge port 53. The liquid flowing into the liquid discharge chamber 54 is discharged to the outside of the liquid processing apparatus 1 via the discharge path 55.
Fig. 4 and 5 show the state in which the nozzle unit 3 is positioned at the standby position stored in the standby unit 5, in which the tip end 45 of each application nozzle 41 is positioned at the reduced diameter portion 52 of the nozzle storage portion 51, for example, and the inner peripheral surface of the reduced diameter portion 52 corresponds to the inner peripheral surface surrounding the tip end of the application nozzle 41. The housing discharge port 53 is located below the outlet 47 of each nozzle 41 and at a position facing the outlet 41. The housing portion discharge port 53 is formed in a circular shape, for example, and is formed to be larger than the outer diameter of the coating nozzle 41 at a portion of the coating nozzle 41 corresponding to the outlet 47. In this example, the portion between the reduced diameter portion 52 and the drain chamber 54 where the inner diameter is smallest is opposite to the storage portion discharge port 53.
A solvent outlet 56 for supplying a solvent is provided in a sidewall of the nozzle housing portion 51 for the coating nozzle 41, for example, in a sidewall of the reduced diameter portion 52. Since the solvent outlet 56 is formed, for example, so as to supply the solvent along the inner peripheral surface of the reduced diameter portion 52, the solvent outlet 56 is provided in the tangential direction of the reduced diameter portion 52, for example, as shown in fig. 4 (b). Thereby, the solvent discharged from the solvent outlet 56 is guided along the inner peripheral surface of the nozzle housing 51 and discharged from the housing discharge port 53, and the solvent discharged from the solvent outlet 56 falls down in the reduced diameter portion 52 as a swirling flow.
As shown in fig. 5, in each nozzle housing portion 51 of each application nozzle 41, the solvent outlet 56 is connected to a solvent supply source 58 via a solvent supply path 57, and a flow rate adjusting portion 59 having an on-off valve, a mass flow controller, and the like is provided in each solvent supply path 57. Each flow rate adjusting unit 59 is a mechanism for controlling and driving by a control signal of the control unit 6, for example, and adjusting the supply amount of the solvent discharged from the solvent outlet 56 to each nozzle housing unit 51. The solvent supply unit of the present invention includes a solvent supply path 57, a flow rate adjustment unit 59, and a solvent supply source 58. As will be described later, the solvent supply unit supplies the solvent to the solvent outlet 56 at a first flow rate when forming the liquid layer of the solvent at the tip of the application nozzle 41, and then supplies the solvent to the solvent outlet 56 at a second flow rate smaller than the first flow rate after forming the liquid film of the solvent so as to close the outlet 47 of the nozzle 41. The nozzle housing 51 corresponding to the solvent nozzle 42 is configured in the same manner as the nozzle housing 51 corresponding to the coating nozzle 41, for example, except that the solvent outlet 56 is not formed.
As described later, in the standby unit 5, the discharge of the resist liquid is simulated from the coating nozzle 41, but when the viscosity of the resist liquid is high, the blockage of the resist liquid occurs if the storage portion discharge port 53 is small. On the other hand, if the storage portion discharge opening 53 is large, a liquid layer of the solvent cannot be formed at the tip of the application nozzle 41. Therefore, when the outer diameter L1 of the coating nozzle 41 at the portion of the coating nozzle 41 corresponding to the outlet 47 is, for example, 2.5mm to 3.0mm, the inner diameter L2 of the housing portion outlet 53 is preferably set to be, for example, 3.2mm to 3.6mm in diameter.
The coating nozzle 41 and the solvent nozzle 42 of the nozzle unit 3 are arranged, for example, on a straight line passing through the rotation center of the wafer W, and the nozzle housing portions 51 of the standby unit 5 are also arranged so as to be positioned on a straight line passing through the rotation center of the wafer W. The nozzle unit 3 is configured to be movable and liftable on a straight line passing through the rotation center of the wafer W by the moving mechanism 32 as described above, and thus the nozzle unit 3 can be moved between the standby position and the processing position. The standby position is a position where the tip end 45 of each application nozzle 41 is accommodated in the reduced diameter portion 52 of each nozzle accommodating portion 51 as described above. The processing position is a position where either one of the coating nozzle 41 and the solvent nozzle 42 supplies the processing liquid or the solvent to the rotation center of the wafer W. Further, there is also a position of the nozzle unit 3 above the standby position (for example, the front end of each application nozzle 41 of the nozzle unit 3 is located above, for example, about 1mm to 2mm from the upper surface of the nozzle housing portion 51 of the standby unit 5).
The liquid processing apparatus 1 includes a control unit 6, and the control unit 6 is configured by, for example, a computer and includes a program storage unit not shown. The program storage unit stores a program in which commands (step sets) are programmed to be able to perform various operations such as a coating process of the wafer W, a process of the coating nozzle 41 in the standby unit 5, and the like. Then, by outputting control signals from the control unit 6 to the respective units of the liquid processing apparatus 1 by using this program, the operations of the respective units of the liquid processing apparatus 1 are controlled. The program is stored in the program storage unit in a state of being stored in a storage medium such as a hard disk, an optical disk, a magnetic disk, or a memory card, for example.
Next, with reference to fig. 6 and 7, the operation of the liquid processing apparatus 1 will be described by taking as an example a case where a resist liquid is applied by using one application nozzle 41A of the nozzle unit 3. First, for example, a resist solution having a viscosity of 50cp to 1000cp is used, and the resist solution is discharged from the coating nozzle 41A onto the surface of the wafer W held by the spin chuck 2 to perform a coating process. That is, the spin chuck 2 is raised above the cover 23, and the wafer W is received from a substrate transport mechanism, not shown. Then, the nozzle unit 3 is moved to a position where the solvent nozzle 42 supplies the solvent to the rotation center of the wafer W held by the spin chuck 2, and a dilution liquid as the solvent is supplied. Then, the wafer W is rotated by the spin chuck 2, and the dilution liquid is spread to the peripheral edge by the centrifugal force.
Next, the rotation of the spin chuck 2 is stopped, and the nozzle unit 3 is moved to a position where the coating nozzle 41A supplies the resist liquid to the rotation center of the wafer W held by the spin chuck 2, and the resist liquid is discharged. Then, the wafer W is rotated by the spin chuck 2, and the resist liquid is diffused from the center portion to the peripheral portion of the wafer W by the centrifugal force. For example, the resist solution is applied in a state where the wafer surface is wetted with the dilution solution, and the wafer W thus coated with the resist solution is transferred to the substrate transport mechanism.
On the other hand, when the coating liquid is not discharged for a predetermined time or longer after the end of the coating process, the nozzle unit 3 is moved to a position facing the standby unit 5, and then lowered, and the tip of each of the coating nozzles 41 is accommodated in the corresponding nozzle accommodating portion 51 so as to be positioned at the standby position. In this state, the resist solution 71 in the front end of the flow path 46 of the coating nozzle 41A is discharged into the nozzle housing 51 by a dummy dispenser (see fig. 6 (a)).
The resist liquid 71 is discharged to the liquid discharge chamber 54 side through the storage portion discharge port 53 of the nozzle storage portion 51. In this example, the housing portion discharge port 53 is formed to be larger than the outer diameter of the nozzle 41A at a portion of the application nozzle 41A corresponding to the outlet 47. For example, the diameter is 3.6mm, and therefore, when the viscosity of the resist liquid 71 is high, such as about 1000cp, clogging of the resist liquid 71 in the storage portion discharge port 53 can be suppressed.
Next, the first suction is performed by the suction valve VA provided in the treatment liquid supply path 411 of the coating nozzle 41A. When the operation is performed in this way, the liquid surface of the resist liquid 71 in the flow path 46 of the coating nozzle 41A is moved backward toward the treatment liquid supply path 411 as shown in fig. 6 (b), and the liquid surface rises from the tip of the coating nozzle 41A. The suction is preferably performed by the suction valve VA so that, for example, the surface of the resist solution 71 in the coating nozzle 41A rises 1 to 3mm from the nozzle tip.
Next, as shown in fig. 6 (c), while the second suction is performed by the suction valve VA, the solvent 72 is supplied from the solvent outlet 56 into the nozzle housing 51 at the first flow rate and for the first supply time, and a liquid film 73 of the solvent is formed at the tip end of the flow path 46 of the application nozzle 41A. The liquid film 73 is a film closing the outlet 47 of the coating nozzle 41A, and has a thickness of 1mm, for example. The solvent 72 discharged from the solvent outlet 56 is guided along the inner peripheral surface of the reduced diameter portion 52 of the nozzle housing 51, falls down as a swirling flow, and is discharged from the housing discharge port 53.
As described above, the solvent 72 falls in a spiral shape along the inner peripheral surface of the nozzle housing portion 51, and therefore, when the housing portion discharge port 53 is enlarged, the solvent 72 is rapidly discharged through the housing portion discharge port 53. As is clear from the evaluation test described later, when the supply amount of the solvent 72 is smaller than the first flow amount, the solvent 72 is not sucked into the application nozzle 41A even if the solvent is sucked into the nozzle. Accordingly, the supply amount of the solvent 72 is set to the first flow rate, and the solvent 72 is sucked from the upstream side of the flow path 46 in the coating nozzle 41 by the suction valve VA constituting the suction means. As described above, as shown in fig. 7 (a), the solvent 72 is sucked to the side of the application nozzle 41A, and the liquid film 73 of the solvent is formed at the tip of the application nozzle 41A.
In this example, since the diameter of the housing outlet 53 is 3.6mm, the liquid film 73 of the solvent can be formed at the tip end of the application nozzle 41A by setting the first flow rate to 90 ml/min to 150 ml/min, for example, 100 ml/min, and the first supply time to 1 to 2 seconds, for example. Further, it is considered that the first flow rate can be made smaller than 90 ml/min by increasing the suction force of the coating nozzle 41A, and when a resist liquid having a relatively high viscosity is used, the resist liquid easily adheres to the inner wall surface of the flow path 46 of the coating nozzle 41A. Therefore, when the suction force is increased, the resist liquid may be broken into small parts and separated, and when a liquid layer of the solvent is formed inside the coating nozzle 41A as described later, the resist liquid is easily mixed with the liquid layer of the resist liquid, which is not a good method.
Next, as shown in fig. 6 (d), suction is continued to be performed to the flow path 46 in the coating nozzle 41A by the suction valve VA, and the solvent is supplied from the solvent outlet 56 at a second flow rate and for a second supply time longer than the first supply time, for example, in a state where the liquid film 73 is formed at the tip of the coating nozzle 41A so as to be in contact with the liquid film 73. The second flow rate is smaller than the first flow rate, and can maintain a state where the outlet 47 of the coating nozzle 41 is closed by the solvent.
As a result, as shown in fig. 7 (b), the solvent 72 in contact with the liquid film 73 is sucked into the flow path 46 of the coating nozzle 41A by the surface tension and the suction action to the flow path 46 in the coating nozzle 41A. That is, the liquid film 73 serves as a starting point, and the solvent 72 supplied to the inner peripheral surface of the reduced diameter portion 52 of the nozzle housing portion 51 is sucked into the flow path 46 by surface tension. Since the solvent 72 is discharged at the second flow rate, the state where the outlet 47 of the coating nozzle 41 is closed by the solvent can be maintained, and therefore, by utilizing the surface tension, the liquid pool of the solvent closing the housing portion discharge port 53 is not formed in the nozzle housing portion 51, and the solvent can be sucked into the coating nozzle 41A. In this example, since the diameter of the housing outlet 53 is 3.6mm, the second supply amount is set to 30 ml/min to 60 ml/min, for example, 40 ml/min, and the second supply time is set to 6 seconds to 7 seconds, for example.
The first flow rate, the first supply time, the second flow rate, and the second supply time are data calculated in advance through experiments. The size of the storage section discharge port 53 of the nozzle storage section 51 is set according to the viscosity of the resist liquid, the size of the outlet 47 of the coating nozzle 41, and the size of the outer diameter of the nozzle at the position corresponding to the outlet 47, and the first flow rate, the first supply time, the second flow rate, and the second supply time are appropriately calculated according to the size of the storage section discharge port 53.
As a result, as shown in fig. 6 (e), the process liquid layer 81, the air layer 82, and the liquid layer (solvent layer) 83 of the solvent are formed in this order from the process liquid supply path 411 side in the flow path 46 of the coating nozzle 41A. Thus, the treatment liquid (resist liquid) inside the tip of the coating nozzle 41A is isolated from the atmosphere by the air layer 82 and the solvent layer 83, and thus the treatment liquid can be prevented from drying.
For example, the liquid surface of the solvent layer 83 in the coating nozzle 41A is preferably sucked by the suck-back valve VA so as to rise by about 5mm to 15mm from the front end of the coating nozzle 41A. After that, the suction valve VA may be used to suck the solvent into the flow path 46 in the coating nozzle 41A in a state where the supply of the solvent from the solvent outlet 56 is stopped, and an air layer may be formed outside the solvent layer 83 inside the tip of the coating nozzle 41A. By forming an air layer at the tip end side of the solvent layer 83 in the coating nozzle 41A in this manner, it is possible to prevent droplets of the solvent from being sucked into the tip end of the coating nozzle 41A. In this state, each application nozzle 41 of the nozzle unit 3 stands by at a standby position in the standby unit 5.
Next, a case where the liquid processing apparatus 1 performs a coating process on the wafer W using the nozzle unit 3 in which the process liquid layer 81, the air layer 82, and the solvent layer 83 are formed at the tip of each of the coating nozzles 41 will be described by taking as an example a case where one coating nozzle 41A of the nozzle unit 3 is used. First, the solvent layer 83 is discharged from the coating nozzle 41A. That is, the coating nozzle 41A is disposed at the standby position of the standby unit 5, a predetermined amount of resist liquid is discharged by the flow rate adjusting unit 413 of the nozzle 41A, and the solvent layer 83 at the nozzle tip is discharged, and then the resist liquid is sucked back. At this time, in order to reduce the amount of the waste resist liquid, the amount of the resist liquid to be supplied for discharging only the solvent layer 83 is obtained in advance by experiments, and the solvent layer 83 is discharged by lowering the liquid surface of the resist liquid by, for example, about 2 mm.
Next, the nozzle unit 3 is moved to a processing position where the coating nozzle 41A supplies the coating liquid to the wafer W, and the resist liquid is supplied from the coating nozzle 41A to the wafer W, and the coating process is performed in the above-described manner. When the coating liquid is not discharged for a predetermined time or longer after the end of the coating process, the used coating nozzle 41A is stored in the nozzle storage 51 of the standby unit 5, and the processing liquid layer 81, the air layer 82, and the solvent layer 83 are formed in this order from the processing liquid supply path 411 side in the coating nozzle 41A as described above.
Thereafter, when the coating process is performed using the other coating nozzle 41B different from the one coating nozzle 41A, the other coating nozzle 41B discharges the solvent layer 83 as in the coating nozzle 41A. Next, the wafer W is subjected to a coating process of a resist solution as a processing solution using the coating nozzle 41B, and then the nozzle unit 3 is disposed at the standby position of the standby unit 5, and a process for forming a processing liquid layer 81, an air layer 82, and a solvent layer 83 inside the tip of the coating nozzle 41B is performed.
Here, according to a program stored in the control unit 6, the following operations are performed: the solvent of the coating nozzle 41A to be used is discharged, a predetermined coating process is performed, and then a series of operations for forming a process liquid layer 81, an air layer 82, and a solvent layer 83 inside the tip of the coating nozzle 41A are performed; and then a series of operations at the time of the next coating process using another coating nozzle 41B or the like.
According to the above embodiment, when the liquid layer 83 of the solvent is formed at the tip end portion of the application nozzle 41 in the nozzle housing portion 51, the solvent is supplied at the first flow rate, the liquid film 73 is formed so as to close the outlet 47 of the application nozzle 41, and then the solvent is supplied at the second flow rate smaller than the first flow rate. As a result, the liquid film 73 formed at the outlet 47 of the coating nozzle 41 comes into contact with the solvent, and the solvent is sucked into the tip end portion of the coating nozzle 41 by the surface tension, thereby forming a liquid layer 83 of the solvent. Therefore, it is not necessary to form a liquid pool of the solvent covering the storage portion discharge port 53 in the nozzle storage portion 51, and the supply amount of the solvent is reduced from the first flow rate to the second flow rate in the middle of the supply of the solvent to the nozzle storage portion 51, so that the solvent can be saved.
The present invention has been accomplished by finding out the following cases: when the liquid film 73 is formed at the outlet 47 of the coating nozzle 41, the solvent supply amount needs to be a first flow rate of a large flow rate, but after the liquid film 73 is formed, the solvent can be sucked into the coating nozzle 41 even if the solvent supply amount is set to be a second flow rate smaller than the first flow rate. Therefore, the container outlet 53 of the nozzle container 51 is 3.2mm to 3.6mm, so that the solvent can be saved and the liquid layer 83 of the solvent can be formed at the tip end of the application nozzle 41.
Therefore, when the viscosity of the resist liquid is relatively large, such as about 1000cp, the storage portion discharge port 53 of the resist liquid can be set large, and therefore clogging of the resist liquid during the simulated dispensing can be suppressed, and the solvent can be saved. For example, when the solvent is supplied at the first flow rate of 100 ml/min for 1 to 2 seconds, then the solvent is supplied at the second flow rate of 40 ml/min for 6 to 7 seconds, and the liquid layer 83 of the solvent is formed at the tip of the application nozzle 41, the solvent supply amount can be reduced by about 45% as compared with the case where the solvent is supplied at the first flow rate (100 ml/min) for 7 to 8 seconds. Thus, the solvent can be saved by adjusting the amount of the solvent to be supplied using the existing equipment, and this method is effective.
(evaluation test 1)
An experimental example for carrying out the present invention will be described below. First, the correlation between the size of the storage section discharge port 53 of the nozzle storage section 51 and the formation of the solvent layer 83 of the coating nozzle 41 was evaluated. In the nozzle housing portion 51 of the present invention shown in fig. 4, the housing portion discharge port 53 was made to have a diameter of 3.6mm, the suction amount of the application nozzle 41 was made to be constant, and the supply amount of the solvent from the solvent outlet 56 was changed between 20 ml/min and 120 ml/min, and whether or not the solvent layer 83 was formed in the application nozzle 41 was visually confirmed. The same evaluation was also performed for the nozzle housing portion 51 having the housing portion discharge port 53 of 3.0 mm.
As a result, it was confirmed that: when the storage section outlet 53 is 3.6mm, the solvent layer 83 is formed when the solvent supply amount is 100 ml/min to 120 ml/min, and when the storage section outlet 53 is 3.0mm, the solvent layer is formed when the solvent supply amount is 20 ml/min to 120 ml/min. When the storage portion discharge port 53 is enlarged, the solvent is rapidly discharged from the storage portion discharge port 53 and is difficult to be sucked by the coating nozzle 41, and therefore, it can be understood that the supply flow rate of the solvent needs to be increased in order to form the solvent layer 83.
(evaluation test 2)
Next, the correlation between the presence or absence of the liquid film 73 at the tip of the coating nozzle 41 and the formation of the solvent layer 83 of the coating nozzle 41 was evaluated. The following was confirmed: in the nozzle housing portion 51 of the present invention shown in fig. 4, the housing portion discharge port 53 is made to have a diameter of 3.6mm, and the amount of solvent supplied from the solvent liquid outlet 56 is changed between 20 ml/min and 120 ml/min when the liquid film 73 is formed and not formed in the application nozzle 41, and the solvent layer 83 is formed. The suction amount of the coating nozzle 41 is fixed. The same evaluation was also performed for the nozzle housing portion 51 having the housing portion discharge port 53 of 3.0 mm.
As a result, it was confirmed that: when the liquid film 73 is formed in the coating nozzle 41, the solvent layer 83 is formed when the solvent supply amount is 40 ml/min to 120 ml/min, and when the liquid film 73 is not formed, the solvent layer 83 is formed when the solvent supply amount is 100 ml/min to 120 ml/min. As described above, such a phenomenon is observed; when the storage portion discharge port 53 is large, such as 3.6mm, if the solvent is supplied in advance with the liquid film 73 held at the tip of the application nozzle 41, the solvent can be sucked from the liquid film 73 to the inner peripheral surface of the reduced diameter portion 52 of the nozzle storage portion 51 even if the subsequent solvent supply amount is low. From the above evaluation test, it was confirmed that: when the liquid film 73 is formed at the outlet 47 of the coating nozzle 41, the solvent is supplied at a first flow rate, and then, the solvent is supplied at a second flow rate lower than the first flow rate, whereby the solvent layer 83 can be formed in the coating nozzle 41 and the solvent can be saved. Accordingly, it can be understood that when the inner diameter of the housing portion outlet 53 is 3.2 to 3.6mm, the liquid film 73 is formed at the tip of the application nozzle 41 when the first flow rate is 90 ml/min to 150 ml/min, and the solvent layer 83 is formed when the second flow rate is 30 ml/min to 60 ml/min.
In the above-described embodiment, the solvent outlet 56 for supplying the solvent at the first flow rate from the solvent supply portion and the solvent outlet 56 for supplying the solvent at the second flow rate from the solvent supply portion may be shared, but the solvent outlet for discharging the solvent at the first flow rate and the solvent outlet for discharging the solvent at the second flow rate may be provided independently on, for example, the side wall surface of the reduced diameter portion 52.
Examples of the treatment liquid of the present invention include pigment resists (OCCF) and water-soluble resists, and examples of the solvent include dilution of PGMEA, OK73, and the like, water, and the like, in addition to the resist liquid. In the above-described embodiment, the example of the nozzle unit 3 provided with the plurality of coating nozzles 41 has been described, but the number of coating nozzles 41 is not limited to the above-described example, and can be applied to a configuration provided with one coating nozzle. The present invention can be applied to a liquid processing apparatus for a substrate to be processed other than a semiconductor wafer, for example, an FPD (flat panel display) substrate.
Claims (9)
1. A nozzle standby apparatus for: a nozzle for discharging a treatment liquid which is solidified by drying is put on standby, a solvent is sucked into the tip of the nozzle to form a liquid layer of the solvent,
the nozzle standby apparatus is characterized by comprising:
a nozzle housing part including an inner peripheral surface formed so as to surround a tip end portion of the nozzle, the housing part being formed so as to face an outlet of the nozzle;
a solvent outlet opening in the nozzle housing portion, the solvent outlet being formed so as to guide the solvent discharged from the solvent outlet along an inner peripheral surface of the nozzle housing portion and discharge the solvent from the housing portion discharge port; and
and a solvent supply unit configured to supply a solvent to the solvent liquid outlet at a first flow rate when the liquid layer of the solvent is formed at the tip portion of the nozzle, form a liquid film by the solvent so as to close the outlet of the nozzle, and supply the solvent to the solvent liquid outlet at a second flow rate smaller than the first flow rate, wherein the second flow rate is a flow rate at which the state in which the outlet of the nozzle is closed by the solvent can be maintained.
2. The nozzle standby apparatus according to claim 1, wherein:
the solvent outlet from the solvent supply portion for supplying the solvent at the first flow rate and the solvent outlet from the solvent supply portion for supplying the solvent at the second flow rate are common solvent outlets.
3. A nozzle standby apparatus according to claim 1 or 2, wherein:
in the nozzle housing portion, a reduced diameter portion is formed at a portion where the solvent discharged from the solvent outlet falls down as a swirling flow, the reduced diameter portion having a smaller inner diameter as going down.
4. A nozzle standby apparatus according to any one of claims 1 to 3, wherein:
the outer diameter of the nozzle at the position corresponding to the outlet of the nozzle is 2.5 mm-3.0 mm,
the inner diameter of the outlet of the nozzle is 3.2 mm-3.6 mm.
5. A nozzle standby apparatus according to any one of claims 1 to 4, wherein:
the first flow rate is 90 ml/min-150 ml/min,
the second flow rate is 30 ml/min-60 ml/min.
6. A liquid treatment apparatus, comprising:
a substrate holding portion for holding a substrate;
a nozzle for discharging a processing liquid that is solidified by drying to a surface of the substrate held by the substrate holding portion;
the nozzle standby apparatus of any one of claims 1 to 5; and
and a suction mechanism for sucking the solvent toward the upstream side of the flow path in the nozzle waiting by the nozzle waiting device.
7. The liquid treatment apparatus according to claim 6, wherein:
the viscosity of the treatment liquid is 50 cp-1000 cp.
8. A method of operating a liquid treatment apparatus, comprising:
a step of discharging a processing liquid, which is cured by drying, from a nozzle onto the surface of the substrate held by the substrate holding section;
next, a step of placing the nozzle in a nozzle housing portion having an inner peripheral surface formed so as to surround a tip end portion of the nozzle, and a housing portion discharge port being formed so as to face an outlet of the nozzle;
a step of discharging the treatment liquid from an outlet of a nozzle standing by in the nozzle housing section, and discharging the treatment liquid from a housing section discharge port facing the outlet of the nozzle;
next, discharging the solvent from the solvent outlet opening in the nozzle housing at a first flow rate, guiding the discharged solvent along the inner peripheral surface of the nozzle housing, and forming a liquid film by using the solvent so as to close the outlet of the nozzle; and
and discharging the solvent from the solvent outlet opening in the nozzle housing portion at a second flow rate smaller than the first flow rate, the second flow rate being a flow rate at which the outlet of the nozzle can be maintained in a state of being closed by the solvent, and guiding the discharged solvent along the inner peripheral surface of the nozzle housing portion.
9. A storage medium storing a computer program for use in a liquid processing apparatus that ejects a processing liquid that solidifies due to drying from a nozzle onto a surface of a substrate held in a substrate holding section,
the storage medium is characterized in that:
the computer program has a set of steps programmed therein to execute the method of operating the liquid treatment apparatus according to claim 8.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2017204714A JP6915498B2 (en) | 2017-10-23 | 2017-10-23 | Nozzle standby device, liquid treatment device, operation method of liquid treatment device, and storage medium |
| JP2017-204714 | 2017-10-23 |
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| CN109698145A CN109698145A (en) | 2019-04-30 |
| CN109698145B true CN109698145B (en) | 2023-06-27 |
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| JP7506985B2 (en) * | 2020-02-25 | 2024-06-27 | 東京エレクトロン株式会社 | Liquid treatment apparatus and liquid treatment method |
| JP7519244B2 (en) | 2020-09-11 | 2024-07-19 | 東京エレクトロン株式会社 | Liquid treatment apparatus and method for operating the same |
| KR102635382B1 (en) * | 2020-12-31 | 2024-02-14 | 세메스 주식회사 | Substrate treating apparatus and method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0920260A (en) * | 1995-07-07 | 1997-01-21 | Unisia Jecs Corp | Flow rate control device |
| JP2003033699A (en) * | 2001-07-26 | 2003-02-04 | Nichiden Tekkosho:Kk | Vacuum coating method and apparatus |
| JP2003137398A (en) * | 2001-11-02 | 2003-05-14 | Apic Yamada Corp | Liquid material discharger |
| JP2004014596A (en) * | 2002-06-04 | 2004-01-15 | Fujimori Gijutsu Kenkyusho:Kk | Wafer cleaning method and its equipment |
| JP2007096156A (en) * | 2005-09-30 | 2007-04-12 | Dainippon Screen Mfg Co Ltd | Device for removing cover film |
| CN101092957A (en) * | 2006-06-19 | 2007-12-26 | 东京应化工业株式会社 | Treatment solution supply apparatus |
| JP2012235132A (en) * | 2012-06-19 | 2012-11-29 | Tokyo Electron Ltd | Nozzle cleaning in liquid treatment, method for preventing drying of treatment liquid and apparatus of the same |
| JP2012232298A (en) * | 2012-06-19 | 2012-11-29 | Tokyo Electron Ltd | Method and device for cleaning nozzle in liquid treatment |
| JP2013239485A (en) * | 2012-05-11 | 2013-11-28 | Tokyo Electron Ltd | Movable nozzle and substrate processing device |
| CN104324839A (en) * | 2014-11-14 | 2015-02-04 | 千藤（南京）环保科技有限公司 | Natural focusing type ultrasonic atomization nozzle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3993496B2 (en) | 2001-09-27 | 2007-10-17 | 東京エレクトロン株式会社 | Substrate processing method and coating processing apparatus |
| JP4606234B2 (en) * | 2005-04-15 | 2011-01-05 | 東京エレクトロン株式会社 | Liquid processing method and liquid processing apparatus |
| JP4763575B2 (en) * | 2006-01-26 | 2011-08-31 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP5036664B2 (en) * | 2008-09-04 | 2012-09-26 | 東京エレクトロン株式会社 | Nozzle cleaning in liquid treatment, treatment liquid drying prevention method and apparatus |
| JP2010103131A (en) | 2008-10-21 | 2010-05-06 | Tokyo Electron Ltd | Apparatus and method for treating liquid |
| US9378988B2 (en) * | 2011-07-20 | 2016-06-28 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method using processing solution |
| JP5672204B2 (en) * | 2011-09-13 | 2015-02-18 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, and storage medium |
| KR20140084735A (en) * | 2012-12-27 | 2014-07-07 | 세메스 주식회사 | Apparatus and method for treating substrate |
| JP6714346B2 (en) * | 2015-11-10 | 2020-06-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Nozzle standby device and substrate processing device |
| JP6473409B2 (en) * | 2015-11-10 | 2019-02-20 | 株式会社Ｓｃｒｅｅｎホールディングス | Nozzle standby apparatus and substrate processing apparatus |
-
2017
- 2017-10-23 JP JP2017204714A patent/JP6915498B2/en active Active
-
2018
- 2018-10-11 KR KR1020180120976A patent/KR102627121B1/en active IP Right Grant
- 2018-10-23 CN CN201811234661.5A patent/CN109698145B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0920260A (en) * | 1995-07-07 | 1997-01-21 | Unisia Jecs Corp | Flow rate control device |
| JP2003033699A (en) * | 2001-07-26 | 2003-02-04 | Nichiden Tekkosho:Kk | Vacuum coating method and apparatus |
| JP2003137398A (en) * | 2001-11-02 | 2003-05-14 | Apic Yamada Corp | Liquid material discharger |
| JP2004014596A (en) * | 2002-06-04 | 2004-01-15 | Fujimori Gijutsu Kenkyusho:Kk | Wafer cleaning method and its equipment |
| JP2007096156A (en) * | 2005-09-30 | 2007-04-12 | Dainippon Screen Mfg Co Ltd | Device for removing cover film |
| CN101092957A (en) * | 2006-06-19 | 2007-12-26 | 东京应化工业株式会社 | Treatment solution supply apparatus |
| JP2013239485A (en) * | 2012-05-11 | 2013-11-28 | Tokyo Electron Ltd | Movable nozzle and substrate processing device |
| JP2012235132A (en) * | 2012-06-19 | 2012-11-29 | Tokyo Electron Ltd | Nozzle cleaning in liquid treatment, method for preventing drying of treatment liquid and apparatus of the same |
| JP2012232298A (en) * | 2012-06-19 | 2012-11-29 | Tokyo Electron Ltd | Method and device for cleaning nozzle in liquid treatment |
| CN104324839A (en) * | 2014-11-14 | 2015-02-04 | 千藤（南京）环保科技有限公司 | Natural focusing type ultrasonic atomization nozzle |
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| JP6915498B2 (en) | 2021-08-04 |
| JP2019079886A (en) | 2019-05-23 |
| KR102627121B1 (en) | 2024-01-22 |
| KR20190045062A (en) | 2019-05-02 |
| CN109698145A (en) | 2019-04-30 |
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