JP2023056612A - Processing liquid container, substrate processor, and method for processing substrate - Google Patents

Abstract

To suppress generation of particles in a processing liquid supply route.SOLUTION: The present invention relates to a processing liquid container for containing processing liquid, the processing liquid including: a container body for storing the processing liquid; and a processing liquid suction unit connected to the container body. The processing liquid suction unit includes: a hollow part; a top part opening provided in a top part of the hollow part; a bottom part opening provided in a bottom part of the hollow part; a gas supply unit provided in a side part of the hollow part, the gas supply unit supplying a gas into the hollow part; and an air discharge unit provided in the side part of the hollow part, the air discharge unit discharging air in the hollow part.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a processing liquid container, a substrate processing apparatus, and a substrate processing method.

Patent Literature 1 discloses a processing liquid supply device that supplies a processing liquid to an object to be processed through a processing liquid supply path and a nozzle by a liquid feeding mechanism. This processing liquid supply device includes an opening/closing valve provided in the processing liquid supply path, and a processing liquid supply path provided between the opening/closing valve and the nozzle. A flow path adjustment section for adjustment and a control section are provided. In order to temporarily stop the ejection of the treatment liquid from the nozzles, the control section instructs the flow path adjustment section to increase the volume of the part of the treatment liquid supply path from the first volume to the first volume. A control signal is output so that the second volume is smaller than zero and larger than zero, and after the volume of a part of the processing liquid supply path is adjusted to the second volume, the flow of the processing liquid whose discharge is stopped is stopped. A control signal is output to the on-off valve so that the processing liquid supply path is closed before the operation is resumed.

JP 2016-139665 A

The technology according to the present disclosure suppresses the generation of particles in the supply path of the treatment liquid.

One aspect of the present disclosure is a processing liquid storage container that stores a processing liquid, the processing liquid storage container comprising: a container body that stores the processing liquid; and a processing liquid suction unit connected to the container body; The section includes a hollow section, a top opening provided at the top of the hollow section, a bottom opening provided at the bottom of the hollow section, and a side section of the hollow section for allowing a gas to enter the hollow section. It has a gas supply port for supplying, and a gas discharge port provided on the side of the hollow portion for discharging the gas inside the hollow portion.

According to the present disclosure, generation of particles in the treatment liquid supply path is suppressed.

1 is a side sectional view schematically showing the outline of the configuration of a substrate processing apparatus according to this embodiment; FIG. It is an explanatory view for explaining a function of each part which constitutes a substrate processing device. 1 is a perspective view schematically showing the outline of the configuration of a processing liquid storage container according to this embodiment; FIG. FIG. 3 is an explanatory diagram of a processing liquid container and a gas supply mechanism; It is a side cross-sectional view showing a state in which a nozzle is inserted into the hollow portion. FIG. 4 is a side cross-sectional view schematically showing the flow of gas inside the hollow portion; FIG. 4 is an explanatory diagram showing an example of a circulation structure for gas supplied to the hollow portion; FIG. 4 is an explanatory view showing a method of filling a processing liquid storage container with a processing liquid;

2. Description of the Related Art A manufacturing process for semiconductor devices and the like includes a process of coating a substrate with a resist liquid in order to form a resist pattern. In this process, for example, a semiconductor wafer (hereinafter referred to as "wafer") held by a spin chuck is rotated while a resist liquid is discharged as a processing liquid onto the center of the wafer. The resist liquid is discharged from a nozzle, and the resist liquid discharged from the nozzle is supplied from a resist container containing the resist liquid.

Resist patterns formed on wafers are becoming finer, and in order to cope with further finer resist patterns, it is necessary to reduce the amount of particles that can adhere to wafers. In the conventional coating processing apparatus, for example, parts with high cleanliness are used, or the generation of particles is suppressed in the process of passing the resist solution through the nozzle for discharging the resist solution and in the subsequent coating process. was intended to reduce the amount of particles.

However, in the conventional coating processing apparatus, valves and pumps that may generate particles are installed in the supply path of the resist solution from the resist container to the nozzle. There was room for improvement.

Therefore, the technology according to the present disclosure suppresses the generation of particles in the supply path of the treatment liquid.

Hereinafter, a processing liquid storage container, a substrate processing apparatus, and a substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

Before describing the processing liquid storage container according to the present embodiment, first, a substrate processing apparatus including the processing liquid storage container will be described. FIG. 1 is a side cross-sectional view schematically showing the outline of the configuration of the substrate processing apparatus according to this embodiment.

The substrate processing apparatus in this embodiment is a resist coating apparatus 100 that coats a wafer W as a substrate with a resist liquid as a processing liquid. The resist coating apparatus 100 has a processing container 101 , and a loading/unloading port (not shown) for wafers W is formed on the side surface of the processing container 101 . A spin chuck 102 as a substrate holder is provided in the processing container 101 . Spin chuck 102 holds wafer W horizontally. The spin chuck 102 is connected to a rotating portion 103 that can move up and down, and the rotating portion 103 is connected to a rotation driving portion 104 that is composed of a motor or the like. Therefore, the wafer W held on the spin chuck 102 can be rotated by the driving of the rotation driving section 104 .

A cup 105 is arranged outside the spin chuck 102 to receive and collect the resist liquid that scatters or drops from the wafer W. As shown in FIG. The upper surface of the cup 105 is formed with an opening 106 through which the wafer W passes before and after the wafer W is transferred to the spin chuck 102 . A drain pipe 107 and an exhaust pipe 108 are provided at the bottom of the cup 105 . The exhaust pipe 108 leads to an exhaust device 109 such as an exhaust pump.

A nozzle 110 for discharging a resist liquid toward the surface of the wafer W is arranged in the processing container 101 . The nozzle 110 is provided on a nozzle support portion 111 such as an arm, and the nozzle support portion 111 can be moved up and down by a driving mechanism (not shown) as indicated by a reciprocating arrow A indicated by a dashed line in FIG. , and is horizontally movable as indicated by a reciprocating arrow B indicated by a dashed line. The nozzle 110 has a configuration capable of sucking and discharging liquid based on a control signal from a control section 200, which will be described later. The specific configuration of the nozzle 110 is not particularly limited as long as it is capable of sucking and discharging liquid. For example, a known electric micropipette can be applied as the nozzle 110 .

Outside the cup 105 , a resist container 120 containing a resist solution and a nozzle cleaning unit 130 for cleaning the nozzle 110 are provided. The description of the resist storage unit 120 and the nozzle cleaning unit 130 will be given later.

The resist coating apparatus 100 has a control section 200 . The control unit 200 is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores programs for controlling various processes in the resist coating apparatus 100 . The program may be recorded in a computer-readable storage medium H and installed in the control unit 200 from the storage medium H. The storage medium H may be a temporary storage medium or a non-temporary storage medium. Part or all of the program may be realized by dedicated hardware (circuit board).

FIG. 2 is an explanatory diagram for explaining the function of each part constituting the resist coating apparatus 100. As shown in FIG. The nozzle 110 is movable between the resist storage unit 120 , above the wafer W held by the spin chuck 102 (not shown in FIG. 2 ), and the nozzle cleaning unit 130 .

The resist container 120 includes a plurality of resist containers 1 (hereinafter sometimes referred to as “containers 1”) as treatment liquid containers. Each container 1 may contain, for example, different types of resist liquid, or may contain the same type of resist liquid. Alternatively, a solvent such as thinner used in the wafer W pre-wetting process may be accommodated. The type of processing liquid contained in the container 1, the number of containers 1, and the like are appropriately changed according to the processing contents to be performed in the substrate processing apparatus.

The nozzle cleaning section 130 includes a cleaning liquid spraying section 131 that sprays cleaning liquid onto the surface of the nozzle 110 , a cleaning liquid storage section 132 that stores the cleaning liquid, and a gas spraying section 133 that sprays gas onto the surface of the nozzle 110 . The nozzle 110 moves to the nozzle cleaning section 130 at a predetermined timing, for example, when changing the type of resist liquid to be ejected onto the wafer W, and moves through the cleaning liquid spraying section 131, the cleaning liquid storage section 132, and the gas spraying section 133 in order. cleaned. Note that the nozzle cleaning section 130 may not be provided when cleaning the nozzle 110 is unnecessary.

The cleaning liquid spraying unit 131 sprays a cleaning liquid such as pure water onto the surface of the nozzle 110 to remove the resist liquid adhering to the surface of the nozzle 110 .

In the cleaning liquid reservoir 132, the nozzle 110 is immersed in a cleaning liquid such as pure water, and the inside of the nozzle 110 is cleaned by repeatedly sucking the resist liquid and discharging it to a predetermined discharge location. Note that the predetermined ejection location may be inside the cleaning liquid reservoir 132 or may be a dedicated ejection location (not shown).

The gas blowing unit 133 dries the surface of the nozzle 110 by blowing gas such as air onto the surface of the nozzle 110 .

The specific configurations of the cleaning liquid spraying section 131, the cleaning liquid storage section 132, and the gas spraying section 133 are not particularly limited. For example, since gas is supplied into the hollow portion 21 of the resist suction portion 20 as will be described later, the nozzle 110 surface is may be dried. In this case, the hollow portion 21 also functions as the gas blowing portion 133 . Further, for example, the surface of the nozzle 110 may be cleaned by the cleaning liquid reservoir 132 without providing the cleaning liquid spraying section 131 .

Next, an outline of the configuration of the container 1 will be described. FIG. 3 is a perspective view schematically showing the outline of the configuration of the container 1 according to this embodiment. FIG. 4 is an explanatory diagram of the container 1 and a gas supply mechanism to the container 1. FIG.

The container 1 includes a container body 10 that stores resist liquid and a resist suction part 20 connected to the container body 10 .

The container body 10 is made of, for example, a glass bottle, and has a gas supply port 11 formed on the upper surface thereof for supplying gas to the container body 10 . One end of a gas supply pipe 140 is connected to the gas supply port 11, and the other end of the gas supply pipe 140 is connected to a gas supply section 141 that supplies an inert gas such as nitrogen gas or argon gas. The gas supply pipe 140 is also provided with a gas filter 142 that removes impurities from the gas flowing through the gas supply pipe 140 . The flow rate of the gas flowing through the gas supply pipe 140 is adjusted by controlling the gas supply unit 141 by the control unit 200 (FIG. 1). The configuration of the gas supply mechanism for supplying the gas to the container main body 10 is not limited to the configuration described in the present embodiment, and may be any configuration capable of supplying a predetermined gas to the gas supply port 11 .

The resist suction part 20 has a hollow part 21 which is a hollow spherical body. The hollow portion 21 has a top opening 22 formed at the top of the hollow portion 21 and a bottom opening 23 formed at the bottom of the hollow portion 21 . The size of the top opening 22 and the bottom opening 23 may be any size that allows the nozzle 110 to pass therethrough. The shape of the hollow portion 21 is not limited to a spherical body. , the shape of the hollow portion 21 is preferably spherical.

The hollow portion 21 has a gas supply port 24 for supplying gas into the hollow portion 21 and a gas discharge port 25 for discharging the gas inside the hollow portion 21 . The gas supply port 24 and the gas discharge port 25 are formed in side portions of the hollow portion 21, respectively. From the viewpoint of suppressing the occurrence of turbulent flow in the hollow portion 21 , it is preferable that the gas discharge port 25 is formed at a position facing the gas supply port 24 .

One end of a gas supply pipe 150 is connected to the gas supply port 24, and the other end of the gas supply pipe 150 is connected to a gas supply section 151 that supplies an inert gas such as nitrogen gas or argon gas. The gas supply pipe 150 is also provided with a gas filter 152 that removes impurities from the gas flowing through the gas supply pipe 150 . The flow rate of the gas flowing through the gas supply pipe 150 is adjusted by controlling the gas supply unit 151 by the control unit 200 (FIG. 1). A gas discharge pipe 153 through which the gas supplied into the hollow portion 21 is discharged is connected to the gas discharge port 25 .

A bottom opening 23 of the hollow portion 21 is connected to a resist suction pipe 29 provided for sucking the resist liquid. The resist suction pipe 29 extends downward from the bottom opening 23 of the hollow portion 21 and is connected to the lower portion of the container body 10 . The resist suction tube 29 in this embodiment is connected between the bottom opening 23 and the bottom surface 10 a of the container body 10 .

A resist filter 30 is provided in the resist suction pipe 29 , and impurities in the resist liquid passing through the resist suction pipe 29 are removed by the resist filter 30 . If the cleanliness of the resist liquid stored in the container body 10 is sufficiently high as the resist liquid to be coated on the wafer W, the resist filter 30 may not be provided.

Between the hollow portion 21 and the resist filter 30, a liquid level sensor 40 for detecting the liquid level of the resist liquid in the resist suction pipe 29 is provided. The specific configuration of the liquid level sensor 40 is not particularly limited as long as the liquid level can be detected.

A pressure sensor 50 that detects the pressure inside the hollow portion 21 is provided in the hollow portion 21 . The specific configuration of the pressure sensor 50 is not particularly limited as long as it can detect pressure.

As shown in FIG. 5, in the container 1 having the above structure, the hollow portion 21 is formed with the top opening 22 and the bottom opening 23, so that the nozzle 110 can be inserted into the hollow portion 21 to extract the resist suction pipe 29. As shown in FIG. The resist liquid can be sucked from the

By the way, if the hollow portion 21 is not provided, particles may enter from the upper end of the resist suction tube 29 and the cleanliness of the resist liquid in the resist suction tube 29 and the resist liquid in the container main body 10 may be lowered. Concerned. On the other hand, in the container 1 according to the present embodiment, gas is supplied from the gas supply unit 151 shown in FIG. It is formed. Therefore, particles that may enter from the top opening 22 of the hollow portion 21 are discharged from the gas discharge port 25 before reaching the bottom opening 23 due to the gas flow occurring inside the hollow portion 21 . As a result, it is possible to prevent particles from being mixed into the resist liquid in the resist suction tube 29 and maintain the cleanliness of the resist liquid.

Further, in the container 1 in which gas is supplied to the hollow portion 21 , the pressure inside the hollow portion 21 can be adjusted by adjusting the flow rate of the gas supplied into the hollow portion 21 . The pressure inside the hollow portion 21 is preferably higher than the atmospheric pressure, so that volatilization of the resist liquid can be suppressed.

The pressure adjustment in the hollow portion 21 can be adjusted by controlling the amount of gas supplied to the hollow portion 21 based on the pressure value in the hollow portion 21 measured by the pressure sensor 50 (FIG. 4). preferable. For example, when the pressure inside the hollow portion 21 becomes equal to or lower than the atmospheric pressure, the gas supply portion 151 is controlled so that the amount of gas supplied to the hollow portion 21 increases, thereby suppressing volatilization of the resist solution. can be stably obtained.

Further, when the resist liquid in the resist suction tube 29 is sucked, the liquid level of the resist liquid in the resist suction tube 29 is lowered. It is possible to adjust the liquid level by supplying gas from 4). If the liquid level of the resist liquid is maintained at a constant height, it becomes possible to make the lower end position of the nozzle 110 that is lowered when the resist liquid is sucked constant. This eliminates the need to adjust the amount of descent of the nozzle 110 according to the level of the resist liquid, thereby simplifying the movement control of the nozzle 110 .

Preferably, the liquid level is adjusted by supplying gas to the container body 10 based on the liquid level in the resist suction tube 29 detected by the liquid level sensor 40 . For example, when the liquid level sensor 40 detects a decrease in the liquid level of the resist liquid, the gas supply unit 141 is controlled to supply gas to the container body 10, thereby automatically lowering the liquid level. It can be raised to a predetermined height.

The resist container 1 in this embodiment is configured as described above. The gas supply mechanism for the container body 10 and the gas supply mechanism for the hollow portion 21 are not limited to the configurations described in the present embodiment. For example, as shown in FIG. 7, the gas supply mechanism to the hollow portion 21 may be a circulation structure that supplies the gas discharged from the hollow portion 21 to the hollow portion 21 again. In the example shown in FIG. 7, a circulation pipe is configured by connecting a gas supply pipe 150 and a gas discharge pipe 153 via a gas supply unit 151 such as an air blower.

Next, a method of filling the container main body 10, which is not filled with the resist liquid, with the resist liquid will be described. FIG. 8 is an explanatory diagram of the resist filling method.

First, as shown in FIG. 8A, nitrogen gas, for example, is supplied to the gas supply pipe 140 of the container body 10 . At this time, the nitrogen gas supplied to the container main body 10 passes through the resist suction pipe 29 and is discharged from the upper end of the resist suction pipe 29 . By continuing to supply nitrogen gas here, the internal atmosphere of the container body 10 and the resist suction tube 29 is replaced with nitrogen gas, and oxygen, carbon dioxide, moisture, and the like in the container body 10 are removed.

Next, as shown in FIG. 8B, a resist solution is injected into the upper end of the resist suction tube 29. Then, as shown in FIG. At this time, the supply of nitrogen gas to the gas supply pipe 140 is stopped, and the nitrogen gas in the container body 10 is exhausted using, for example, an exhaust pump (not shown). As a result, the resist liquid flows into the container body 10 from the bottom surface 10a of the container body 10 to which the resist suction pipe 29 is connected. After a predetermined amount of the resist liquid is stored in the container body 10, the injection of the resist liquid into the upper end of the resist suction tube 29 is stopped. Thus, the filling of the container main body 10 with the resist solution is completed.

After that, as shown in FIG. 8C, the hollow portion 21, the gas supply pipe 150, and the gas discharge pipe 153 are attached to the resist suction pipe 29 to form the container 1 and the gas supply mechanism as shown in FIG. . By arranging the container 1 in this state in the processing container 101 of the resist coating apparatus 100, the preparation for the resist coating processing of the wafer W is completed.

Next, a method of resist coating processing by the resist coating apparatus 100 will be described.

First, the wafer W is placed on the spin chuck 102 . Subsequently, the nozzle 110 is moved to the resist accommodating portion 120 and inserted into the hollow portion 21 as shown in FIG. After the nozzle 110 is lowered until the lower end of the nozzle 110 is immersed in the resist liquid in the resist suction pipe 29, the nozzle 110 sucks the resist liquid. After that, the nozzle 110 is raised to the outside of the hollow portion 21 .

In the step of sucking the resist solution, since a gas such as nitrogen gas or argon gas is supplied to the hollow portion 21 , particles that may enter from the top opening 22 of the hollow portion 21 reach the bottom opening 23 . It is discharged from the gas discharge port 25 before. Also, even when the nozzle 110 is inserted into the hollow portion 21, the gas continues to be supplied into the hollow portion 21, so the particles adhering to the nozzle 110 are blown away, and the amount of particles can be reduced.

Further, in the step of sucking the resist liquid, the liquid level of the resist liquid in the resist suction tube 29 is lowered by sucking the resist liquid with the nozzle 110 . In the container main body 10 filled with the resist liquid, the gas supply to the container main body 10 is stopped, but when the liquid level sensor 40 detects a decrease in the liquid level, the liquid level Gas is automatically supplied to the container body 10 so that the is raised to a predetermined height. That is, the liquid level that has decreased after the resist liquid is sucked by the nozzle 110 automatically rises to the original liquid level.

Next, the nozzle 110 is moved above the wafer W to eject the resist solution onto the center of the wafer W held on the spin chuck 102, and the spin chuck 102 is rotated to form a resist film on the wafer W. .

After that, the nozzle 110 is cleaned by moving the nozzle 110 to the nozzle cleaning unit 130 as necessary.

Through the above steps, the resist coating process for the wafer W is completed.

In a conventional resist coating apparatus, a resist supply pipe is connected to the nozzle to supply the resist solution to the nozzle, and valves, pumps, etc., which are concerned about the generation of particles, are installed in the supply path of the resist solution. . On the other hand, in the resist coating apparatus 100 according to the present embodiment, the nozzle 110 capable of sucking and discharging the resist liquid is used, and the resist liquid contained in the resist container 1 is sucked by the nozzle 110, thereby applying the resist liquid to the wafer W. It becomes possible to discharge the resist liquid.

That is, the resist coating apparatus 100 according to the present embodiment differs from the conventional resist coating apparatus in the basic structure of the mechanism for supplying the resist liquid to the nozzles, and is used for the resist liquid supply path of the conventional resist coating apparatus. Parts such as valves and pumps are no longer required. Therefore, by using the resist container 1 when performing the resist coating process on the wafer W, the generation of particles in the supply path of the resist solution can be suppressed, and the cleanliness of the resist solution can be improved more than before. can be done.

In this embodiment, the number of nozzles 110 included in the resist coating apparatus 100 is one, but the number of nozzles 110 may be plural. For example, two nozzles 110 and two spin chucks 102 may be provided in the processing container 101, and one nozzle 110 may be assigned to one spin chuck 102 to apply the resist liquid to the wafer W. In the resist coating apparatus 100 having this configuration, for example, a resist containing section 120 and a nozzle cleaning section 130 are arranged between two spin chucks 102 .

In the above-described embodiment, gas is supplied to the container body 10 to adjust the liquid level of the resist liquid in the resist suction tube 29. If possible, no arrangement is required for the liquid level. For example, if the container body 10 is a low-height container and the lower end of the nozzle 110 can be positioned near the bottom of the container body 10 when sucking the resist liquid, the liquid level of the resist liquid in the container body 10 It is possible to suck the resist liquid without adjusting the . In this case, for example, the container 1 is configured by connecting the bottom opening 23 of the hollow portion 21 and the gas supply port 11 of the container body 10 with a pipe or the like.

In the above-described embodiment, an example in which one nozzle 110 sucks and discharges the resist liquid has been described. You may make it discharge. Specifically, a pre-wet liquid storage section (not shown) is provided near the resist storage section 120, and after the resist liquid in the resist storage section 120 is sucked by the nozzle 110, the pre-wet liquid in the pre-wet liquid storage section is aspirate. At this time, a liquid layer of the resist liquid and a liquid layer of the pre-wet liquid are formed to overlap each other inside the nozzle 110 , and the liquid layer of the pre-wet liquid exists on the tip side of the nozzle 110 . Then, the nozzle 110 in this state is moved above the wafer W to eject the pre-wet liquid onto the surface of the wafer W, and then the resist liquid is ejected. In this manner, the nozzle 110 sequentially performs the suction of the resist liquid, the suction of the pre-wet liquid, the discharge of the pre-wet liquid, and the discharge of the resist liquid, thereby continuously performing the pre-wetting process of the wafer W and the resist coating process. can be done.

In addition, the processing liquid storage container and the substrate processing apparatus according to the present disclosure can also be applied to a processing apparatus for substrates to be processed other than semiconductor wafers, such as flat panel display (FPD) substrates.

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

1 resist container 10 container body 20 resist suction unit 21 hollow portion 22 top opening 23 bottom opening 24 gas supply port 25 gas discharge port 100 resist coating device 110 nozzle 141 gas supply unit 151 gas supply unit 200 control unit W wafer

Claims (20)

A processing liquid storage container that stores a processing liquid,
a container body that stores the processing liquid;
a processing liquid suction unit connected to the container body,
The treatment liquid suction unit is
a hollow portion;
a top opening provided at the top of the hollow portion;
a bottom opening provided at the bottom of the hollow portion;
a gas supply port provided on the side of the hollow portion for supplying gas into the hollow portion;
and a gas discharge port provided in a side portion of the hollow portion for discharging a gas inside the hollow portion. 2. The processing liquid storage container according to claim 1, wherein said hollow portion is a spherical body. 3. The processing liquid storage container according to claim 1, wherein said gas outlet is formed at a position facing said gas supply port. The container body has another gas supply port for supplying gas into the container body,
The processing liquid suction unit has a processing liquid suction pipe for suctioning the processing liquid,
The processing liquid storage container according to any one of claims 1 to 3, wherein the processing liquid suction pipe is connected to the bottom opening of the hollow portion and the container body. A substrate processing apparatus,
a processing liquid storage container that stores the processing liquid;
a gas supply unit that supplies gas to the processing liquid container;
a nozzle capable of sucking and discharging the treatment liquid;
A control unit that controls the operation of the gas supply unit and the nozzle,
The processing liquid storage container is
a container body that stores the processing liquid;
a processing liquid suction unit connected to the container body,
The treatment liquid suction unit is
a hollow portion;
a top opening provided at the top of the hollow portion;
a bottom opening provided at the bottom of the hollow portion;
a gas supply port provided on the side of the hollow portion for supplying gas into the hollow portion;
a gas discharge port provided on a side of the hollow portion for discharging the gas in the hollow portion;
While supplying gas to the gas supply port, the control unit causes the nozzle to pass through the top opening and the bottom opening to suck the processing liquid in the container body, and applies the sucked processing liquid to the substrate. A substrate processing apparatus configured to perform dispensing control. 6. The substrate processing apparatus according to claim 5, wherein said control unit is configured to perform control for adjusting the amount of gas supplied to said gas supply port so that the pressure inside said hollow portion is higher than atmospheric pressure. . 7. The substrate processing apparatus according to claim 5, wherein said hollow portion is spherical. 8. The substrate processing apparatus according to claim 5, wherein said gas exhaust port is formed at a position facing said gas supply port. The container body has another gas supply port for supplying gas into the container body,
The processing liquid suction unit has a processing liquid suction pipe for suctioning the processing liquid,
The processing liquid suction pipe is connected to the bottom opening of the hollow portion and the container body,
The control unit is configured to perform control to supply gas to the other gas supply port so that the liquid level of the processing liquid in the processing liquid suction pipe reaches a predetermined height. The substrate processing apparatus according to any one of claims 5-8. A circulation pipe connecting the gas supply port and the gas discharge port,
10. The substrate processing apparatus according to claim 5, wherein said gas supply unit is configured to supply gas to said circulation pipe. A nozzle cleaning unit that cleans the nozzle,
The nozzle cleaning unit has a cleaning liquid reservoir that stores cleaning liquid,
11. The controller according to any one of claims 5 to 10, wherein the control unit is configured to suck the cleaning liquid in the cleaning liquid reservoir with the nozzle and discharge the suctioned cleaning liquid to a predetermined discharge location. 1. The substrate processing apparatus according to item 1. 12. The substrate processing apparatus according to claim 11, wherein said nozzle cleaning section has a cleaning liquid spraying section for spraying cleaning liquid onto the surface of said nozzle. 13. The substrate processing apparatus according to claim 11, wherein said nozzle cleaning part has a gas blowing part for blowing gas onto the surface of said nozzle. A substrate processing method comprising:
a container body for storing a processing liquid;
a processing liquid suction unit connected to the container body,
The treatment liquid suction part includes a hollow part,
a top opening provided at the top of the hollow portion;
a bottom opening provided at the bottom of the hollow portion;
a gas supply port provided on the side of the hollow portion for supplying gas into the hollow portion;
using a processing liquid storage container having a gas discharge port for discharging gas in the hollow portion provided on a side portion of the hollow portion;
a step of sucking the processing liquid in the container body by passing a nozzle capable of sucking and discharging the processing liquid through the top opening and the bottom opening while supplying gas to the gas supply port;
and discharging the sucked processing liquid onto the substrate. 15. The substrate processing method according to claim 14, wherein in the step of sucking the processing liquid, the amount of gas supplied to the gas supply port is adjusted so that the pressure inside the hollow portion is higher than the atmospheric pressure. 16. The substrate processing method according to claim 14, wherein said hollow portion is a spherical body. 17. The substrate processing method according to claim 14, wherein said gas exhaust port is formed at a position facing said gas supply port. The processing liquid suction unit has a processing liquid suction pipe for suctioning the processing liquid,
The processing liquid suction pipe is connected to the bottom opening of the hollow portion and the container body,
18. The method according to any one of claims 14 to 17, wherein in the step of sucking the processing liquid, a gas is supplied to the container body so that the liquid level of the processing liquid in the processing liquid suction pipe is constant. The substrate processing method described. 14. wherein, in the step of sucking the treatment liquid, the gas discharged from the gas outlet is supplied to the gas supply port, thereby circulating the gas supplied to the hollow portion. 19. The substrate processing method according to any one of 18. 20. The substrate processing method according to any one of claims 14 to 19, further comprising a nozzle cleaning step of cleaning the nozzle by sucking the cleaning liquid with the nozzle and discharging the sucked cleaning liquid to a predetermined discharge location. .

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