CN109686731A - A kind of opto-coupler chip SSR integrated circuit and plane frame - Google Patents
A kind of opto-coupler chip SSR integrated circuit and plane frame Download PDFInfo
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- CN109686731A CN109686731A CN201910112782.0A CN201910112782A CN109686731A CN 109686731 A CN109686731 A CN 109686731A CN 201910112782 A CN201910112782 A CN 201910112782A CN 109686731 A CN109686731 A CN 109686731A
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- 230000005693 optoelectronics Effects 0.000 claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000741 silica gel Substances 0.000 claims abstract description 25
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 25
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 238000005538 encapsulation Methods 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000004568 cement Substances 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 10
- 230000008023 solidification Effects 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000005007 epoxy-phenolic resin Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Abstract
A kind of opto-coupler chip SSR integrated circuit, it is characterised in that it includes plane frame, illuminating part, electric receiving element, interior packaging body and outer package body, illuminating part and opto-electronic receiver part is set on plane frame and the two is generally aligned in the same plane.The present invention becomes existing plane packaging structure by traditional stereo encapsulation structure, due to can control the change of isolation distance D in plane packaging structure, it makes it possible to and is run under various operating voltages, and the phenomenon that avoiding point discharge generation, in addition by the setting of the transparent silica gel of special designing and white plastic-sealed body, so that the light that LED light tube emits planar establishes light-path, it is more easier to be received by photoelectric receiving tube, light transmissioning efficiency is improved, the performance of integral product is improved.
Description
Technical field
The present invention relates to a kind of opto-coupler chip SSR integrated circuit and plane frames.
Background technique
Solid-state relay, solid-state Relay (SSR), including main control end and controlled end, general both ends are mutually to be separated by
From, main control end is also input terminal, usually low-power level signal；And controlled end is output end, controls opening for high power load
Or it closes.
The input terminal of optocoupler type solid-state relay is to utilize the semiconductor circuits such as light emitting diode, photistor composition light
Coupler, thyristor or power transistor or IGBT by internal control circuit trigger output end etc., and then be connected
Load current.
One, the characteristics of optocoupler type solid-state relay
1, export and input isolation
Optocoupler type SSR has optimal isolation effect, and isolation voltage is up to 6000V or more；
2, strong antijamming capability
3, switch life is long, up to 100,000 times or more switch periods life.
Two, current prior art feature
Existing procucts at present, the product including producers such as Sharp, Toshiba, structure is as shown in Figure 1:
As shown in Figure 1, optocoupler product uses three-dimensional encapsulation form at present, three-dimensional encapsulation form luminous tube tube core 101 is installed
Above, three-dimensional encapsulation form light-sensitive device 102 is mounted on lower section, and centre is filled with three-dimensional encapsulation form transparent silica gel 103, this
Sample ensure that light-path, and the three-dimensional encapsulation form light-sensitive device 102 of lower section is enable to receive sufficient luminous flux.Meanwhile absolutely
The extraordinary three-dimensional encapsulation form transparent silica gel 103 of edge performance, in turn ensures necessary isolation voltage.So being current industrial circle
A kind of general installation form.
The main deficiency of the three-dimensional encapsulation is that production process is more complicated, needs two sub-frames, and encapsulation when needs pair
Quasi- operation etc., to bring the increase of production cost.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of opto-coupler chip SSR integrated circuit and plane frame,
The production method of opto-coupler chip SSR integrated circuit is also provided.
The object of the present invention is achieved like this:
A kind of opto-coupler chip SSR integrated circuit, it include plane frame, illuminating part, opto-electronic receiver part, interior packaging body with
And outer package body, illuminating part and opto-electronic receiver part is set on plane frame and the two is generally aligned in the same plane, illuminating part
And opto-electronic receiver part is coated and fixed by interior packaging body, outer package body is coated on interior packaging body, outer package body and interior envelope
The interface for filling body forms one to recessed reflecting curved surface, and the color of outer package body is white, the color of interior packaging body be it is transparent,
The light that above-mentioned interface enables illuminating part to issue adequately is received by the reflection at interface by opto-electronic receiver part.
As a preference, the first island and the second island are provided on the plane frame, wherein the first island is used to install
Illuminating part, the second island are used to install opto-electronic receiver part；Third island is additionally provided on the plane frame, third island is used to install
Power device.
As a preference, having the model of isolation distance a D, D between conductor region locating for illuminating part and opto-electronic receiver part
Enclosing is 3mm to 10mm.
As a preference, the range of D is 4mm-6mm.
As a preference, tip all in plane frame is all made into chamfering structure, the radius of chamfering is set as 2mm-
Between 10mm.
As a preference, the white encapsulating material of outer package body is to the absorption coefficient of visible light less than 0.1.
As a preference, the shape of interior packaging body 205 is oblate spheroid, the upper semisection for the light-path that oblate spheroid is formed is work
Make section, the height of active section is H, in order to meet the transmission requirement of optical path, conductor region locating for illuminating part and opto-electronic receiver part it
Between have an isolation distance D, need to meet 0.5H < D < 5H.
A kind of production method of opto-coupler chip SSR integrated circuit, it is characterised in that:
A, frame prepares
Carry out the production of plane frame；There is the first island, the second island and third island, the first island and the on plane frame
The range of the distance between two islands D is 3mm to 10mm, and all tips are all made into chamfering structure in plane frame, chamfering
Radius is set as between 2mm-10mm；
B, chip assembles
Illuminating part is installed on the first island on plane frame, and opto-electronic receiver part, third island installation power are installed in the second island
Device；
Illuminating part is matched at this time for flat, emits light perpendicular to substrate, opto-electronic receiver part cannot receive optical signal；
C, bonding wire
D, glue is dripped
With interior packaging body is formed in the silica gel covering of insulation between the first island 2 and the second island, the silica gel of insulation forms ball
Light-path is thus set up between the first island and the second island in face, can carry out the transmission of optical signal in plane；
Silica gel drop glue uses the silica gel with electrical insulating property in this step, using automated matrix formula dispenser, by two cores
Piece surface and bonding wire are completely covered, and are then solidified, and solidification temperature selects 25 to 150 degrees Celsius, and curing time is 5 points
Clock was to 5 hours, and insulating cement forms spherical surface after solidification, thus sets up optical path between the first island and the second island, can carry out
The transmission of optical signal in plane；
E, it encapsulates
It is packaged to form outer package body using white encapsulating compound, for the light through insulating cement, can only play reflection
Effect, light will not be absorbed, to improve optical transport ratio；
The encapsulating compound, for main organic component, adds high-purity polycrystalline TiO2 with epoxy resin and phenolic resin wherein,
The content of high-purity polycrystalline TiO2 accounts for the 1% to 10% of total weight, and the plastic packaging body thickness of outer package body is not less than 0.5mm.
As a preference, curing time 1 hour to 2 hours, solidification temperature is at 100-150 degrees Celsius.
Compared with prior art, the beneficial effects of the present invention are:
The present invention becomes existing plane packaging structure by traditional stereo encapsulation structure, due to can control plane envelope
The change of isolation distance D in assembling structure, makes it possible to and runs under various operating voltages, and avoids showing for point discharge
As generating, in addition by the setting of the transparent silica gel of special designing and white plastic-sealed body, so that LED light tube emits
Light planar establish light-path, be more easier to be received by photoelectric receiving tube, improve light transmissioning efficiency, improve whole production
The performance of product.
Detailed description of the invention
Fig. 1 is that current optocoupler product uses three-dimensional encapsulation form schematic diagram.
Fig. 2 is planar package form schematic diagram of the invention.
Fig. 3 is the schematic diagram of plane frame of the invention.
Fig. 4 is circuit diagram of the invention.
Fig. 5 is the schematic diagram of the step b of production method of the present invention.
Fig. 6 is the schematic diagram of the step d of production method of the present invention.
Fig. 7 is production method flow chart of the present invention.
Wherein:
Three-dimensional encapsulation form luminous tube tube core 101, three-dimensional encapsulation form light-sensitive device 102, three-dimensional encapsulation form transparent silicon
Glue 103, three-dimensional encapsulation form Plastic Package shell 104, three-dimensional encapsulation form electrode pin 105；
Plane frame 201, the first island 201.1, the second island 201.2, third island 201.3, illuminating part 202, opto-electronic receiver
Part 203, power device 204, interior packaging body 205, outer package body 206.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only invention a part of the embodiment, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Referring to attached drawing 2-7, a kind of opto-coupler chip SSR integrated circuit of the present invention, it includes plane frame 201
(hereinafter referred to as lead frame), illuminating part 202, opto-electronic receiver part 203, interior packaging body 205 and outer package body 206, illuminating part 202
And opto-electronic receiver part 203 is set on plane frame 201 and the two is generally aligned in the same plane, illuminating part 202 and photoelectricity
Receiving element 203 is coated and fixed by interior packaging body 205, and outer package body 206 is coated on interior packaging body 205, outer package body 206
At spherical surface, ellipsoid or other smooth surfaces, the color of outer package body 206 is white, interior envelope at interface with interior packaging body 205
Fill body 205 color be it is transparent, above-mentioned interface enable illuminating part 202 issue light adequately by the reflection quilt at interface
Opto-electronic receiver part 203 is received, and above-mentioned light is finally received from intermediate reflexed to by interface of transmitting, and light-receiving rate is super
Cross 99%.
The first island 201.1 and the second island 201.2 are provided on the plane frame 201, wherein the first island 201.1 is used to
Illuminating part 202 is installed, the second island 201.2 is used to install opto-electronic receiver part 203；Is additionally provided on the plane frame 201
Three islands 201.3, third island 201.3 is used to install SCR silicon-controlled, power transistor, power MOS pipe or IGBT, and (insulated gate is double
Bipolar transistor) constant power device 204.
Illuminating part 202 can select LED light tube or other luminescent wafers etc.；Opto-electronic receiver part 203 can select light
Electric reception pipe and/or amplifier tube or other light sensation chips etc.；Interior packaging body 205 selects transparent insulating cement, outer package body 206
Select white encapsulating material.
Illuminating part 202 and opto-electronic receiver part 203, illuminating part 202 and opto-electronic receiver part are set on plane frame 201
203 be located at be same as in plane, have an isolation distance D between conductor region locating for illuminating part 202 and opto-electronic receiver part 203, every
Separation determines the size for the isolation voltage that can bear from the number of D.
And the isolation voltage being previously mentioned in circuit is specifically, refer to the first island 201.1 respectively with other two island phases
The isolation voltage of isolation.The distance between first island 201.1 and the second island 201.2 D are the key index of design framework, the model of D
Enclosing is 3mm to 10mm, normally isolates distance and is greater than 4 millimeters, specifically insulate ginseng according to insulation silica gel employed in the present invention
Number, isolation voltage corresponding to 4 millimeters or more of isolation distance up to 4000V or more, if necessary to isolation voltage 6000V with
On, then need isolation distance control at 6 millimeters or more.In addition, point discharge leads to unpredictable breakdown, plane in order to prevent
The inner all tips of type frame 201 are all made into chamfering structure, and the radius of chamfering is set as between 2mm-10mm.
When designing the distance D on the first island 201.1 and the second island 201.2, in addition to consider necessary isolation voltage it
Outside, it is also necessary to consideration be optical path transmission problem.
The optical path set up in insulating cement meets optical reflection principle, for this reason, it may be necessary to have the feature that
1, what is sealed outside insulating cement is white encapsulating material, is for reflected light, if with dark or black encapsulation
Material, the then light that illuminating part 202 is launched will be absorbed, and affect the normal transmission of light, for this purpose, white encapsulating compound is this
One emphasis of patent, to the absorption coefficient of visible light less than 0.1.
2, the shape of insulating cement is extremely important, and smooth spherical surface is very important optical path, so in drop adhesive process
In, need rationally to control the size and shape of glue；Meanwhile after dripping glue, need to place at a certain temperature a period of time make
Silica gel solidification, guarantees the shape of silica gel.The temperature selects 25 to 150 degrees Celsius, and standing time is 5 minutes to 5 hours.Preferably
Curing time 1 hour to 2 hours, solidification temperature was at 100-150 degrees Celsius.
3, there is certain relationship between the size and D of interior packaging body 205, in general, the ideally shape of insulating cement
Shape is sphere, but sphere has certain slump in the actual production process, and slump makes insulating cement form oblate spheroid later,
The upper semisection for the light-path that oblate spheroid is formed is active section, and the height of active section is H, and the radius of oblate spheroid planar is R, this
When H < R in order to meet the transmission requirement of optical path need to meet 0.5H < D < 5H.
Plane frame 201 is illustrated as individual unit, in production, many lead frame structure is needed to connect into array shape
Formula is convenient for use of large-scale production.The array structure of arrangement includes the frame of intersection construction, is also possible to Uncrossed frame.
The array of frame can be two rows or more, comprising more multiple rows of.
It after cooled and solidified, is formed above plane frame 201 by silica gel drop on silicon chip surface by gluing process
The interior packaging body 205 of smooth curved surface, the smooth curved surface of preferred condition are ball-type curved surface or spheroid shape curved surface, interior packaging body
205 formation between illuminating part 202 and opto-electronic receiver part 203 so that set up reliable light-path.And in plane frame
201 tops are really there is no silica gel, and due to the effect of Silica Surface tension, silica gel can not fall to plane frame from gap
201 lower section of frame.
Outer package body 206 is provided with outside interior packaging body 205, traditional encapsulating compound is black, has the function of extinction, no
Conducive to the transmission of optical signal, for this purpose, can effectively reflect those from interior 205 table of packaging body using the encapsulating compound of white in the present invention
These light are reflected back inside interior packaging body 205 by the light that face transmits, to ensure that sufficient luminous flux.
As can be seen that the working principle of circuit is as follows in the encapsulated circuit schematic diagram formed after leadframe package: when
On illuminating part 202 after making alive, illuminating part 202 shines, and light is received by the optic path of silica gel by opto-electronic receiver part 203
And amplify, for driving the control electrode for the power device 204 being mounted on third island.The anode and cathode of power device 204 connects
On external circuit, so, reaches and opening between the anode and cathode of power device is controlled by the control electrode of power device
It closes.All things considered is exactly the control by illuminating part 202, achievees the purpose that control power device.
The key technical indexes of foregoing circuit, encapsulated circuit have the 5 of 1 foot of side, 2 feet, 3 feet, 4 feet and the other side
Foot, 6 feet and 8 feet；
Pressure resistance 600V-800V, meets the needs of household electrical appliance between 6 feet and 8 feet；
0.5 to 1.5 ampere of conducting electric current between 6 feet and 8 feet；
Input pressure resistance 4000V to 6000V between cathode (1,3,4) and output (6,8)；Meet wanting for isolation voltage in safety
It asks.
A kind of production method of opto-coupler chip SSR integrated circuit is as follows:
A, frame prepares
Carry out the production of plane frame；There is the first island 201.1, the second island 201.2 and third island on plane frame
201.3, the range of the distance between the first island 201.1 and the second island 201.2 D are 3mm to 10mm, the inner institute of plane frame 201
Some tips are all made into chamfering structure, and the radius of chamfering is set as between 2mm-10mm.
B, chip assembles
Illuminating part 202, opto-electronic receiver part 203 are installed on plane frame
Illuminating part 202 is matched at this time for flat, emits light perpendicular to substrate, opto-electronic receiver part 203 cannot receive light letter
Number.
C, bonding wire
D, glue is dripped
Illuminating part 202 is placed on the position on the first island 201.1, and opto-electronic receiver part 203 is placed on the position on the second island 201.2
It sets, the two in a plane, is needed through silica gel forming technique, it is established that a light-path；At this time in 201.1 He of the first island
With in the silica gel covering of insulation between second island 201.2, the silica gel of insulation forms spherical surface, thus on the first island 201.1 and the
Light-path is set up between two islands 201.2, the transmission of optical signal in plane can be carried out.
Silica gel drop glue uses the silica gel with electrical insulating property in this step, using automated matrix formula dispenser, by two cores
Piece surface and bonding wire are completely covered, and are then solidified in baking oven, and insulating cement forms spherical surface after solidification, thus the
Optical path is set up between one island 201.1 and the second island 201.2, the transmission of optical signal in plane can be carried out.
E, it encapsulates
Traditional integrated circuit encapsulating compound is black, and black encapsulation material can absorb light, optical transport ratio is reduced, so adopting here
Encapsulating compound is white, for the light through insulating cement, only can play the role of reflection, light will not be absorbed, to mention
High optical transport ratio.
The encapsulating compound, for main organic component, and fills being mixed into for a large amount of silica with epoxy resin and phenolic resin
Product have high heat resistance and good mechanical properties.
Using addition high-purity polycrystalline TiO in the epoxy2The light that (titanium dioxide) keeps plastic-sealed body reflection extraneous, it is high-purity
Spend polycrystalline TiO2Content account for the 1% to 10% of total weight.To completely cut off interference of the ambient to inside chip, while will be interior
The light of portion's LED chip is reflected into the inside of silica gel.In order to ensure completely cutting off and reflection plays a role, plastic packaging body thickness is not less than
0.5mm。
The component and proportion of the specific white encapsulating compound of supplement herein, preferably with existing different formulations on the market.
The above is only specific application examples of the invention, are not limited in any way to protection scope of the present invention.All uses
Equivalent transformation or equivalent replacement and the technical solution formed, all fall within rights protection scope of the present invention.
Claims (10)
1. a kind of opto-coupler chip SSR integrated circuit, it is characterised in that it includes plane frame, illuminating part, opto-electronic receiver part, interior
Packaging body and outer package body, illuminating part and opto-electronic receiver part are set on plane frame and the two is located at same put down
Face, illuminating part and opto-electronic receiver part are coated and fixed by interior packaging body, and outer package body is coated on interior packaging body, outer package
The interface of body and interior packaging body forms one to recessed reflecting curved surface, and the color of outer package body is white, the face of interior packaging body
Color be it is transparent, above-mentioned interface enable illuminating part issue light adequately carried out by the reflection at interface by opto-electronic receiver part
It receives.
2. a kind of opto-coupler chip SSR integrated circuit according to claim 1, it is characterised in that set on the plane frame
It is equipped with the first island and the second island, wherein the first island is used to install illuminating part, the second island is used to install opto-electronic receiver part；The plane
Third island is additionally provided on type frame, third island is used to installation power device.
3. a kind of opto-coupler chip SSR integrated circuit according to claim 1, it is characterised in that illuminating part and opto-electronic receiver part
The range for having isolation distance a D, D between locating conductor region is 3mm to 10mm.
4. a kind of opto-coupler chip SSR integrated circuit according to claim 3, it is characterised in that the range of D is 4mm-6mm.
5. a kind of opto-coupler chip SSR integrated circuit according to claim 1, it is characterised in that all in plane frame
Tip is all made into chamfering structure, and the radius of chamfering is set as between 2mm-10mm.
6. a kind of opto-coupler chip SSR integrated circuit according to claim 1, it is characterised in that the white encapsulation of outer package body
Material is to the absorption coefficient of visible light less than 0.1.
7. a kind of opto-coupler chip SSR integrated circuit according to claim 1, it is characterised in that the shape of interior packaging body is flat
Sphere, the upper semisection for the light-path that oblate spheroid is formed are active section, and the height of active section is H, is wanted to meet the transmission of optical path
It asks, has an isolation distance D between conductor region locating for illuminating part and opto-electronic receiver part, need to meet 0.5H < D < 5H.
8. a kind of production method of opto-coupler chip SSR integrated circuit, it is characterised in that:
A, frame prepares
Carry out the production of plane frame；There is the first island, the second island and third island, the first island and the second island on plane frame
The distance between the range of D be 3mm to 10mm, all tips are all made into chamfering structure, the radius of chamfering in plane frame
It is set as between 2mm-10mm；
B, chip assembles
Illuminating part is installed on the first island on plane frame, and opto-electronic receiver part, third island installation power device are installed in the second island；
Illuminating part is matched at this time for flat, emits light perpendicular to substrate, opto-electronic receiver part cannot receive optical signal；
C, bonding wire
D, glue is dripped
With interior packaging body is formed in the silica gel covering of insulation between the first island and the second island, the silica gel of insulation forms spherical surface, this
Sample just sets up light-path between the first island and the second island, can carry out the transmission of optical signal in plane；
Silica gel drop glue uses the silica gel with electrical insulating property in this step, using automated matrix formula dispenser, by two chip lists
Face and bonding wire are completely covered, and are then solidified, solidification temperature select 25 to 150 degrees Celsius, curing time be 5 minutes extremely
5 hours, insulating cement formed spherical surface after solidification, thus sets up optical path between the first island and the second island, can carry out plane
The transmission of interior optical signal；
E, it encapsulates
It is packaged to form outer package body using white encapsulating compound, for the light through insulating cement, can only play the work of reflection
With light will not be absorbed, to improve optical transport ratio；
The encapsulating compound, for main organic component, adds high-purity polycrystalline TiO2 with epoxy resin and phenolic resin wherein, high-purity
The content of degree polycrystalline TiO2 accounts for the 1% to 10% of total weight, and the plastic packaging body thickness of outer package body 206 is not less than 0.5mm.
9. a kind of production method of opto-coupler chip SSR integrated circuit according to claim 9, it is characterised in that: when solidification
Between 1 hour to 2 hours, solidification temperature is at 100-150 degrees Celsius.
10. a kind of plane frame, it is characterised in that all tips are all made into chamfering structure in plane frame, and the half of chamfering
Diameter is set as between 2mm-10mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910112782.0A CN109686731A (en) | 2019-02-13 | 2019-02-13 | A kind of opto-coupler chip SSR integrated circuit and plane frame |
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| CN201910112782.0A CN109686731A (en) | 2019-02-13 | 2019-02-13 | A kind of opto-coupler chip SSR integrated circuit and plane frame |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048501A (en) * | 2019-12-25 | 2020-04-21 | 中国电子科技集团公司第四十四研究所 | Small-size high-linearity linear optocoupler device and manufacturing method thereof |
| CN111426399A (en) * | 2020-03-28 | 2020-07-17 | 无锡豪帮高科股份有限公司 | Production process of wireless temperature sensor based on thermopile |
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