CN102694108B - High-power LED packaging structure - Google Patents
High-power LED packaging structure Download PDFInfo
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- CN102694108B CN102694108B CN201210171170.7A CN201210171170A CN102694108B CN 102694108 B CN102694108 B CN 102694108B CN 201210171170 A CN201210171170 A CN 201210171170A CN 102694108 B CN102694108 B CN 102694108B
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- packaging substrate
- reflector
- lens
- electrode
- led chip
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Abstract
The invention provides a high-power LED packaging structure. The high-power LED packaging structure comprises a reflective cup and an integrated packaging substrate, wherein the reflective cup is a groove formed on the surface of the integrated packaging substrate; a lens is arranged at the upper end of the reflective cup; a bonding layer, an LED chip, a dispensing layer and a phosphor powder layer are sequentially arranged in a cavity formed by the lens and the reflective cup; and an electrode for connecting the LED chip and a drive circuit is arranged on the integrated packaging substrate. The LED packaging structure provided by the invention adopts integrated package to avoid heat dissipation bottleneck in traditional LEDs; and the layered dispensing layer enables the LED chip to be far away from the phosphor powder layer, so that light re-absorption of the LED chip in the traditional packaging structure is reduced, and the light emitting rate and the light distribution performance are improved. The LED packaging structure provided by the invention not only has a simple structure but also omits a bracket, an aluminum baseplate and a heat sink part in traditional package, thereby reducing the process steps, lowering the cost and facilitating industrial production.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure, particularly relate to a kind of high-power LED encapsulation structure.
Background technology
LED is that a kind of semiconductor PN that utilizes saves luminous diode.Broad mass market is had in fields such as indicator light, signal lamp, backlight, Landscape Lightings.LED luminous efficiency is high, and power consumption is few, long service life, and the advantages such as security reliability is strong, environmental protection become the forth generation lighting source replacing conventional incandescent, fluorescent lamp, high-voltage gas discharging light.The encapsulating structure of LED will directly have influence on the junction temperature of LED, the key problems such as luminous intensity distribution performance, so the luminous intensity distribution performance of science is the breach of improving LED heat radiation and luminous intensity distribution.
The encapsulation of typical high power LED is by LED chip die bond on support, then is connected by completing circuit on support welding to aluminium base and mechanical support protection; Due to the heat radiation bottleneck that support and this structure of aluminium base produce, make the junction temperature of great power LED too high, unstable, easily cause light decay, look declines.And traditional fluorescence coating directly puts powder on chip, then add lens, fill packaging plastic.This structure is difficult to control fluorescent material shape and uniformity, easily causes light distribution uneven, the problems such as look skewness.And phosphor powder layer and LED chip hypotelorism, exacerbate the reabsorption of LED chip, reduce external quantum efficiency.
Summary of the invention
The object of the present invention is to provide a kind of high-power LED encapsulation structure, this LED encapsulation structure simplifies packaging technology, reduces packaging cost, has good heat dissipation effect, and light emission rate is high, the feature of luminous intensity distribution performance excellence.
To achieve these goals, present invention employs following technical scheme:
Comprise reflector and integrative packaging substrate, described reflector is be opened in the groove on integrative packaging substrate surface, the upper end of reflector is provided with lens, being disposed with bonded layer, LED chip, some glue-line and phosphor powder layer in the cavity that lens and reflector are formed, integrative packaging substrate being provided with the electrode for connecting LED chip and drive circuit.
Described integrative packaging substrate is the surperficial aluminium sheet through oxide isolated process or copper coin, electrode is welded with the enamelled wire for connecting drive circuit.
One end of described electrode is arranged at the bottom of reflector, and the other end extends to outside reflector.
Described electrode is silver-coated electrode or gold-plated electrode.
The material of described bonded layer is elargol or insulating cement.
The material of described some glue-line is silica gel or epoxy resin.
Described phosphor powder layer is solid dome-type.
Be filled with packaging plastic between described phosphor powder layer and lens, lens are fixed on integrative packaging substrate by packaging plastic.
High-power LED encapsulation structure of the present invention, is directly fixed on LED chip on integrative packaging substrate by bonded layer, solves the heat radiation bottleneck of traditional LED structure medium-height trestle and aluminium base, reaches the object of good heat radiating; High-power LED encapsulation structure of the present invention adopts and a glue-line and phosphor powder layer is provided separately, and makes phosphor powder layer away from LED chip, decreases the heavily absorption of LED chip to light, improve light emission rate, improve luminous intensity distribution performance; Phosphor powder layer can directly be accomplished in lens integration by high-power LED encapsulation structure of the present invention, simplify the making of hemisphere phosphor powder layer, simultaneously, phosphor powder layer is hemisphere, the thinkling sound better can mating LED chip luminescence suddenly distributes, and not only structure is simple, and with low cost, be beneficial to volume production, be convenient to suitability for industrialized production.
Accompanying drawing explanation
Fig. 1 is the structural representation of high-power LED encapsulation structure of the present invention;
Fig. 2 is the section of structure of high-power LED encapsulation structure of the present invention;
Fig. 3 is thermo-resistance measurement schematic diagram;
In figure: lens 1, phosphor powder layer 2, reflector 3, LED chip 4, integrative packaging substrate 5, bonded layer 6, some glue-line 7, electrode 8, packaging plastic 9, enamelled wire 10.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
See Fig. 1 and Fig. 2, the present invention includes reflector 3 and integrative packaging substrate 5, described reflector 3 is for being opened in the groove on integrative packaging substrate 5 surface, the upper end of reflector 3 is provided with lens 1, being disposed with bonded layer 6, LED chip 4, some glue-line 7 and phosphor powder layer 2 in the cavity that lens 1 and reflector 3 are formed, integrative packaging substrate 5 being provided with the electrode 8 for connecting LED chip 4 and drive circuit.
Described integrative packaging substrate 5 is the surperficial aluminium sheet through oxide isolated process or copper coin, electrode 8 is welded with the enamelled wire 10 for connecting drive circuit, one end of described electrode 8 is arranged at the bottom of reflector 3, the other end extends to outside reflector 3, and described electrode 8 is silver-coated electrode or gold-plated electrode.
The material of described bonded layer 6 is elargol or insulating cement, and the material of described some glue-line 7 is silica gel or epoxy resin.Described phosphor powder layer 2 is solid dome-type, and be filled with packaging plastic 9 between described phosphor powder layer 2 and lens 1, lens 1 are fixed on integrative packaging substrate 5 by packaging plastic 9.
Embodiment
A kind of high-power LED encapsulation structure, adopt integrative packaging structure, the power of LED chip used is 1-3W, and the thickness of phosphor powder layer is 1-3mm, and the height of some glue-line is 2-4mm.During preparation, first on metal aluminum sheet, manufacture reflector, then insulation processing carried out to metal aluminum sheet surface, then on reflector fixed electrode, complete integrative packaging substrate.Then conventional package step is carried out to LED chip, expand crystalline substance-Ci brilliant-short roasting, make LED chip by the reflector of bonded layer die bond on integrative packaging substrate; The connection of electrode and chip is completed by beating gold thread; After manufacturing hemisphere phosphor powder layer, LED chip carrying out a glue, puts powder, length is roasting, lens and metal aluminum sheet being fixed (lens have pin hole, are injected into by packaging plastic on the phosphor powder layer in lens) finally by filling packaging plastic in lens.
The present embodiment is the LED based on integrative packaging, can reach better light distribution, higher light emission rate, better heat radiation.The thinkling sound that dome-type phosphor powder layer mates LED chip luminescence more suddenly distributes, and some glue-line can make phosphor powder layer away from LED chip, reduces the heavily absorption of LED chip, this encapsulating structure is not only easy to process, is beneficial to shaping, is convenient to volume production, and structure is simple, with low cost, be beneficial to suitability for industrialized production.
See Fig. 3, measure compound thermal resistance and the integrative packaging substrate thermal resistance of oxide-film and fine aluminium with the following method, resistance top is covered with adhesive plaster completely, reduce heat to a great extent and upwards transmit, compared with the heat of going down, the heat upwards transmitted is substantially negligible.In addition, during measurement data, the installation of TC, near distance resistance 1 centimetre, and is after heat balance, and namely resistance is energized after 2 hours and measures, the homogeneous temperature on two surfaces and remaining unchanged, and can reflect two surperficial temperature exactly.The thermal power then inputting aluminium base is approximately the electrical power of resistance consumption.
Computing formula according to thermal resistance:
Calculate the compound thermal resistance of aluminium base.Wherein T1 represents the temperature at point for measuring temperature 1 place, and T2 represents the temperature at point for measuring temperature 2 place, U and I represents the voltage and current at resistance two ends respectively, and P represents the thermal power of input resistance.
Compound thermal resistance is at 1 DEG C/W, by anodic oxidation aluminium Surface Creation aluminum oxide film due to crystal state irregular, conductive coefficient is lower than alpha-alumina crystals, be generally about 2W/mK, but still be much higher than the 0.2-0.8W/mK of existing metal-based copper-clad plate epoxy resin, and the thickness of the aluminum oxide film obtained by anodic oxidation can much smaller than epoxy resin, and therefore, the thermal resistance of integrative packaging substrate is obviously better than existing metal-based copper-clad plate.
The foregoing is only one embodiment of the present invention, it not whole or unique execution mode, the conversion of those of ordinary skill in the art by reading specification of the present invention to any equivalence that technical solution of the present invention is taked, is claim of the present invention and contains.
Claims (5)
1. a high-power LED encapsulation structure, it is characterized in that: comprise reflector (3) and integrative packaging substrate (5), described reflector (3) is for being opened in the groove on integrative packaging substrate (5) surface, the upper end of reflector (3) is provided with lens (1), bonded layer (6) is disposed with in the cavity that lens (1) and reflector (3) are formed, LED chip (4), point glue-line (7) and phosphor powder layer (2), integrative packaging substrate (5) is provided with the electrode (8) for connecting LED chip (4) and drive circuit, described integrative packaging substrate (5) is the surperficial aluminium sheet through oxide isolated process or copper coin, described phosphor powder layer (2) is solid dome-type, one end of described electrode (8) is arranged at the bottom of reflector (3), the other end extends to reflector (3) outward, electrode (8) is welded with the enamelled wire (10) for connecting drive circuit, enamelled wire (10) extends to integrative packaging substrate (5) bottom by the via hole on integrative packaging substrate (5).
2. a kind of high-power LED encapsulation structure according to claim 1, is characterized in that: described electrode (8) is silver-coated electrode or gold-plated electrode.
3. a kind of high-power LED encapsulation structure according to claim 1, is characterized in that: the material of described bonded layer (6) is elargol or insulating cement.
4. a kind of high-power LED encapsulation structure according to claim 1, is characterized in that: the material of described some glue-line (7) is silica gel or epoxy resin.
5. a kind of high-power LED encapsulation structure according to claim 1, it is characterized in that: be filled with packaging plastic (9) between described phosphor powder layer (2) and lens (1), lens (1) are fixed on integrative packaging substrate (5) by packaging plastic (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210171170.7A CN102694108B (en) | 2012-05-29 | 2012-05-29 | High-power LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210171170.7A CN102694108B (en) | 2012-05-29 | 2012-05-29 | High-power LED packaging structure |
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| Publication Number | Publication Date |
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| CN102694108A CN102694108A (en) | 2012-09-26 |
| CN102694108B true CN102694108B (en) | 2014-12-24 |
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| CN201210171170.7A Expired - Fee Related CN102694108B (en) | 2012-05-29 | 2012-05-29 | High-power LED packaging structure |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103271645A (en) * | 2013-06-03 | 2013-09-04 | 苏州原点工业设计有限公司 | Water dispenser capable of emitting light |
| CN108400221A (en) * | 2018-04-28 | 2018-08-14 | 华南理工大学 | A kind of LED quantum dot light emittings device and its packaging method |
| CN108807359A (en) * | 2018-07-26 | 2018-11-13 | 中山市光圣半导体科技有限责任公司 | A kind of LED component and manufacturing method |
| CN114464609A (en) * | 2022-03-03 | 2022-05-10 | 深圳市两岸光电科技有限公司 | Packaging device of full-color LED |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825640A (en) * | 2004-09-30 | 2006-08-30 | 晶元光电股份有限公司 | Semiconductor luminescent element composition |
| US7581853B2 (en) * | 2005-12-21 | 2009-09-01 | Samsung Electro-Mechanics Co., Ltd. | LED package and backlight unit using the same |
| CN101696790A (en) * | 2009-10-27 | 2010-04-21 | 彩虹集团公司 | High-power LED heat-dissipation packaging structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101526567B1 (en) * | 2008-05-07 | 2015-06-10 | 엘지이노텍 주식회사 | Lighting emitting diode package |
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2012
- 2012-05-29 CN CN201210171170.7A patent/CN102694108B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825640A (en) * | 2004-09-30 | 2006-08-30 | 晶元光电股份有限公司 | Semiconductor luminescent element composition |
| US7581853B2 (en) * | 2005-12-21 | 2009-09-01 | Samsung Electro-Mechanics Co., Ltd. | LED package and backlight unit using the same |
| CN101696790A (en) * | 2009-10-27 | 2010-04-21 | 彩虹集团公司 | High-power LED heat-dissipation packaging structure |
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| CN102694108A (en) | 2012-09-26 |
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Granted publication date: 20141224 Termination date: 20210529 |