CN111048501A - Small-size high-linearity linear optocoupler device and manufacturing method thereof - Google Patents
Small-size high-linearity linear optocoupler device and manufacturing method thereof Download PDFInfo
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- CN111048501A CN111048501A CN201911360439.4A CN201911360439A CN111048501A CN 111048501 A CN111048501 A CN 111048501A CN 201911360439 A CN201911360439 A CN 201911360439A CN 111048501 A CN111048501 A CN 111048501A
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000005499 meniscus Effects 0.000 claims abstract description 37
- 238000007639 printing Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 21
- 238000003466 welding Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 5
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention relates to the technical field of linear photoelectric isolation, in particular to a small-size high-linearity linear optocoupler device, which comprises: the LED chip comprises an LED chip, a thick film substrate, a meniscus dome and two photodiode chips; a gold-plated bonding pad is arranged in the central area of the thick film substrate, and a light-emitting diode chip is mounted at the central point of the gold-plated bonding pad; the two photosensitive diode chips are arranged on the surface of the gold-plated bonding pad and are symmetrical to the center point of the gold-plated bonding pad; printing a conduction band on the gold-plated bonding pad, and connecting pins of each chip by using the conduction band to form a passage in the whole device; the inner surface of the meniscus dome is plated with a roughened reflecting mirror surface, the meniscus dome is installed on a thick film substrate, and a chip on the gold-plated bonding pad is positioned in the meniscus dome; the invention adopts a crescent dome structure, and the interior of the crescent dome structure adopts a roughened reflecting mirror surface, so that two photosensitive diode chips can uniformly receive light sources, and the uniformity of photosensitive current is realized.
Description
Technical Field
The invention relates to the technical field of linear photoelectric isolation, in particular to a small-size high-linearity linear optocoupler device and a manufacturing method thereof.
Background
The linear optocoupler realizes linear isolation transmission of signals through a photoelectric isolation technology. The linear optical coupler commonly used at present usually adopts an up-down correlation structure, and the outside has to be filled with optical cement due to the adoption of a plastic package form, so that the structure has three defects: 1) the linear optical coupler is large in size, generally the size of SOP8 package, and particularly the height of the linear optical coupler generally reaches 5 mm; 2) in the correlation structure, the two photodiodes need to generate the same photocurrent, namely high linearity, and must be corrected by an online photoelectric coupling technology, which is not beneficial to the mass production of products; 3) the inside encapsulating is handled and is made the reliability reduction of linear opto-coupler, can not satisfy the long-life use in the full temperature range.
Disclosure of Invention
In order to solve the problems of the prior art, the invention designs a linear optocoupler device with small volume and high linearity, which comprises: the light-emitting diode chip comprises a light-emitting diode chip 1, a thick film substrate 3, a meniscus dome 4 and two photosensitive diode chips 2;
the thick film substrate 3 is of a cylinder structure, a gold-plated bonding pad is arranged in the center area of the thick film substrate 3, and a light-emitting diode chip 1 is mounted at the center point of the gold-plated bonding pad; two photosensitive diode chips 2 are arranged on the surface of the gold-plated bonding pad and are symmetrical to the center point of the gold-plated bonding pad; printing a conduction band on the gold-plated bonding pad, and connecting pins of each chip by using the conduction band to form a passage in the whole device;
the inner surface of the meniscus dome 4 is electroplated with a roughened reflecting mirror surface, the meniscus dome 4 is installed on the thick film substrate 3, and a chip on a gold-plated pad is positioned in the meniscus dome 4.
Preferably, the thick film substrate 3 is a semiconductor material.
Preferably, the light emitting diode chip is a GaAlAs infrared light emitting diode chip.
Preferably, the photodiode chip is a silicon-based PIN photodiode chip.
Preferably, when the meniscus dome 4 is mounted on the thick film substrate 3, the meniscus dome 4 is filled with a protective gas.
Preferably, the size V of the small-volume high-linearity linear optocoupler device is: 3.1mm 2.4mm 1.4mm V is less than or equal to 3.3mm 2.8mm 1.6 mm.
A method for manufacturing a linear optocoupler device with small volume and high linearity comprises the following steps:
s1: arranging a gold-plated bonding pad in the central area of the thick film substrate 3, and determining the welding position of the light-emitting diode chip 1 and the photosensitive diode chip 2 on the gold-plated bonding pad;
s2: planning a circuit of the gold-plated bonding pad, printing a conduction band in an electroplating mode, and connecting a welding hole of the light-emitting diode chip 1 with a welding hole of the photosensitive diode chip 2 by using the conduction band;
s3: cleaning the thick film substrate 3 by using plasma water, and drying;
s4: the light-emitting diode chip 1 and the photosensitive diode chip 2 are pressure-welded into the corresponding welding holes by adopting a gold wire ball welding mode to form a passage;
s5: cleaning the thick film substrate 3 by using plasma water, and drying;
s6: plating a layer of reflecting mirror surface on the inner surface of the meniscus dome 4 in an electroplating way, and carrying out rough treatment on the reflecting mirror surface;
s7: precisely positioning the meniscus dome 4 at a preset position of the thick film substrate 3 in a protective gas, and welding the meniscus dome;
s8: and passivating the outer surface of the linear optical coupler to form a surface passivation film, thereby finishing the manufacture of the linear optical coupler with small volume and high linearity.
The invention adopts a crescent dome structure, and adopts a roughened reflecting mirror surface in the crescent dome structure, so that two photosensitive diode chips can uniformly receive light sources, and the uniformity of photosensitive current is realized; according to the invention, glue filling treatment is not required in the meniscus dome, so that the service lives of the light emitting diode chip and the light sensitive diode chip are ensured, and the reliability of the linear optocoupler is improved.
Drawings
FIG. 1 is an overall block diagram of the present invention;
the LED light source comprises a light emitting diode chip 1, a light sensitive diode chip 2, a thick film substrate 3, a thick film substrate 4 and a meniscus dome.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A small-volume high-linearity linear optocoupler device, as shown in fig. 1, comprising: the light-emitting diode chip comprises a light-emitting diode chip 1, a thick film substrate 3, a meniscus dome 4 and two photosensitive diode chips 2;
the thick film substrate 3 is of a cylinder structure, a gold-plated bonding pad is arranged in the center area of the thick film substrate 3, and a light-emitting diode chip 1 is mounted at the center point of the gold-plated bonding pad; two photosensitive diode chips 2 are arranged on the surface of the gold-plated bonding pad and are symmetrical to the center point of the gold-plated bonding pad; printing conduction bands at intervals on the gold-plated bonding pad, and connecting pins of each chip by the conduction bands to form a passage in the whole device;
the inner surface of the meniscus dome 4 is electroplated with a roughened reflecting mirror surface, the meniscus dome 4 is installed on the thick film substrate 3, and a chip on a gold-plated pad is positioned in the meniscus dome 4.
The light emitting diode chip 1 is a GaAlAs infrared light emitting diode chip, adopts a double heterojunction body material structure, and is provided with an active layer of GaAs and a limiting layer of AlGaAs.
The photodiode chip 2 is a silicon-based PIN photodiode chip, and a silicon photodetector planar process is adopted, and an intrinsic layer I is added between a P-type layer and an N-type layer to manufacture the PIN photodiode.
The material of the thick film substrate 3 is a semiconductor material. Preferably, the semiconductive material is alumina ceramic.
The upper part and the lower part of the thick film substrate 3 are of square column structures.
The light emitted by the light emitting diode chip 1 is reflected by the rough reflecting mirror surface of the meniscus dome 4, and is uniformly and diffusely reflected to the two photodiode chips 2.
When current is applied to the light emitting diode 1, the light emitting diode chip 1 emits light, the light is diffusely reflected by the meniscus dome 4 and received by the two photodiode chips 2, and the light received by the two photodiode chips 2 generates high-linearity photocurrent to be output.
During production and manufacturing, the light-emitting diode chip 1 and the two photosensitive diode chips 2 need to be accurately positioned on the thick film substrate 3, so that the two photosensitive diodes 2 are axially symmetrical relative to the light-emitting diode 1, and meanwhile, the inner surface of the meniscus dome 4 needs to be roughened, so that the uniformity of diffuse reflection of light rays is ensured.
Another embodiment of the invention comprises: a gold-plated bonding pad is arranged in the central area of the thick film substrate 3, a light-emitting diode chip insertion hole and two photosensitive diode chip insertion holes are formed in the gold-plated bonding pad, and pins of the light-emitting diode chip 1 and pins of the photosensitive diode chip 2 can be inserted into corresponding device insertion holes; and printing conduction bands at intervals on the gold-plated bonding pads, and connecting pins of each chip by using the conduction bands to form a passage in the whole device.
A circular platform is arranged in the center area of the thick film substrate 3, a buckle is arranged on the circular platform, and the light emitting diode chip 1 and the photosensitive diode chip 2 are positioned on the circular platform; the side of circular platform is provided with the buckle.
The bottom surface of the meniscus dome 4 is a circle with the same size as the circular platform, a buckle corresponding to the circular platform is arranged inside the meniscus dome 4, and the meniscus dome 4 is detachably connected with the circular platform of the thick film substrate 3 through the buckle.
A method for manufacturing a linear optocoupler device with small volume and high linearity comprises the following steps:
s1: arranging a gold-plated bonding pad in the central area of the thick film substrate 3, and determining the welding position of the light-emitting diode chip 1 and the photosensitive diode chip 2 on the gold-plated bonding pad;
s2: planning a circuit of the gold-plated bonding pad, printing a conduction band in an electroplating mode, and connecting a welding hole of the light-emitting diode chip 1 with a welding hole of the photosensitive diode chip 2 by using the conduction band;
s3: cleaning the thick film substrate 3 by using plasma water, and drying;
s4: the light-emitting diode chip 1 and the photosensitive diode chip 2 are pressure-welded into the corresponding welding holes by adopting a gold wire ball welding mode to form a passage;
s5: cleaning the thick film substrate 3 by using plasma water, and drying;
s6: plating a layer of reflecting mirror surface on the inner surface of the meniscus dome 4 in an electroplating way, and carrying out rough treatment on the reflecting mirror surface;
s7: precisely positioning the meniscus dome 4 at a preset position of the thick film substrate 3 in a protective gas, and welding the meniscus dome;
s8: and passivating the outer surface of the linear optical coupler to form a surface passivation film, thereby finishing the manufacture of the linear optical coupler with small volume and high linearity.
Table 1 shows the results of the external dimensions and the linearity of the linear optical coupler before and after the invention is adopted, the external dimensions of the linear optical coupler before the invention is not more than 10.0mm 6.5mm 5.1mm, the linearity is not less than 99.900%, the size V of the linear optical coupler with small volume and high linearity after the invention is not less than 3.1mm 2.4mm 1.4mm and not more than 3.3mm 2.8mm 1.6mm, and the linearity is not less than 99.980%.
Preferably, the size V of the small-volume high-linearity linear light coupling device is 3.2mm 2.5mm 1.5 mm.
TABLE 1 comparison of front and rear electrical parameters and isolation characteristics using the present invention
The invention realizes the linear optical coupler with small volume and high linearity. The electrical parameters and the overall dimension of the high-volume linear optocoupler meet the high-performance requirements of the system, and the high-volume linear optocoupler has good universality, is favorable for high reliability and microsystemization of an application system, and is easy to popularize and apply.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A small-size high-linearity linear optocoupler device, comprising: the LED chip comprises a light emitting diode chip (1), a thick film substrate (3), a meniscus dome (4) and two photosensitive diode chips (2);
the thick film substrate (3) is of a cylinder structure, a gold-plated bonding pad is arranged in the center area of the thick film substrate (3), and a light-emitting diode chip (1) is mounted at the center point of the gold-plated bonding pad; two photosensitive diode chips (2) are arranged on the surface of the gold-plated bonding pad and are symmetrical to the center point of the gold-plated bonding pad; printing a conduction band on the gold-plated bonding pad, and connecting pins of each chip by using the conduction band to form a passage in the whole device;
the inner surface of the meniscus dome (4) is electroplated with a roughened reflecting mirror surface, the meniscus dome (4) is installed on the thick film substrate (3), and the chips (1 and 2) on the gold-plated bonding pad are positioned in the meniscus dome (4).
2. A low-profile high-linearity linear optocoupler device according to claim 1, characterized in that the thick film substrate (3) is of semiconductor material.
3. The linear optocoupler device with small volume and high linearity according to claim 1, wherein the light emitting diode chip (1) is a GaAlAs infrared light emitting diode chip, and adopts a double heterojunction material structure, the active layer is GaAs, and the confinement layer is AlGaAs.
4. The linear optocoupler device with small volume and high linearity according to claim 1, wherein the photodiode chip (2) is a silicon-based PIN photodiode chip, and a PIN photodiode is manufactured by adding an intrinsic layer I between a P-type layer and an N-type layer by using a silicon photodetector planar process.
5. A small-volume high-linearity linear optical coupler device as claimed in claim 1, wherein when the meniscus dome (4) is soldered on the thick film substrate (3), the meniscus dome (4) is filled with a shielding gas.
6. The small-volume high-linearity linear optical coupler device according to claim 1, wherein the size V of the small-volume high-linearity linear optical coupler device is as follows: 3.1mm 2.4mm 1.4mm V is less than or equal to 3.3mm 2.8mm 1.6 mm.
7. A small-volume high-linearity linear optical coupler device according to claim 6, wherein the size V of the small-volume high-linearity linear optical coupler device is 3.2mm 2.5mm 1.5 mm.
8. A method for manufacturing a linear optocoupler device with small volume and high linearity is characterized by comprising the following steps:
s1: arranging a gold-plated bonding pad in the central area of the thick film substrate (3), and determining the welding position of the light-emitting diode chip (1) and the photosensitive diode chip (2) on the gold-plated bonding pad;
s2: planning a circuit of the gold-plated bonding pad, printing a conduction band in an electroplating mode, and connecting a welding hole of the light-emitting diode chip (1) with a welding hole of the photosensitive diode chip (2) by using the conduction band;
s3: cleaning the thick film substrate (3) by using plasma water, and drying;
s4: bonding the light-emitting diode chip (1) and the photosensitive diode chip (2) to the corresponding bonding holes by gold wire ball bonding to form a passage;
s5: cleaning the thick film substrate (3) by using plasma water, and drying;
s6: plating a layer of reflecting mirror surface on the inner surface of the meniscus dome (4) in an electroplating way, and carrying out rough treatment on the reflecting mirror surface;
s7: precisely positioning the meniscus dome (4) at a preset position of the thick film substrate (3) in a protective gas, and welding the meniscus dome;
s8: and passivating the outer surface of the linear optical coupler to form a surface passivation film, thereby finishing the manufacture of the linear optical coupler with small volume and high linearity.
9. The method for manufacturing the small-volume high-linearity linear optical coupler device according to claim 8, wherein the size V of the small-volume high-linearity linear optical coupler device is as follows: 3.1mm 2.4mm 1.4mm V is less than or equal to 3.3mm 2.8mm 1.6 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911360439.4A CN111048501B (en) | 2019-12-25 | 2019-12-25 | Small-size high-linearity linear optocoupler device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911360439.4A CN111048501B (en) | 2019-12-25 | 2019-12-25 | Small-size high-linearity linear optocoupler device and manufacturing method thereof |
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| CN111048501A true CN111048501A (en) | 2020-04-21 |
| CN111048501B CN111048501B (en) | 2022-02-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115236809A (en) * | 2022-07-14 | 2022-10-25 | 贵州航天凯山石油仪器有限公司 | Miniaturized opto-coupler |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2904304Y (en) * | 2006-01-18 | 2007-05-23 | 北京市科通电子继电器总厂 | Plane type photoelectric coupler |
| CN104465640A (en) * | 2013-09-24 | 2015-03-25 | 兆龙国际股份有限公司 | Optical coupler |
| CN105612444A (en) * | 2013-10-29 | 2016-05-25 | 日东电工株式会社 | Opto-electric hybrid substrate and method for producing same |
| CN107731805A (en) * | 2016-11-15 | 2018-02-23 | 启点科技有限公司 | Photo-coupler and its method for packing |
| CN109686731A (en) * | 2019-02-13 | 2019-04-26 | 无锡豪帮高科股份有限公司 | A kind of opto-coupler chip SSR integrated circuit and plane frame |
-
2019
- 2019-12-25 CN CN201911360439.4A patent/CN111048501B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2904304Y (en) * | 2006-01-18 | 2007-05-23 | 北京市科通电子继电器总厂 | Plane type photoelectric coupler |
| CN104465640A (en) * | 2013-09-24 | 2015-03-25 | 兆龙国际股份有限公司 | Optical coupler |
| CN105612444A (en) * | 2013-10-29 | 2016-05-25 | 日东电工株式会社 | Opto-electric hybrid substrate and method for producing same |
| CN107731805A (en) * | 2016-11-15 | 2018-02-23 | 启点科技有限公司 | Photo-coupler and its method for packing |
| CN109686731A (en) * | 2019-02-13 | 2019-04-26 | 无锡豪帮高科股份有限公司 | A kind of opto-coupler chip SSR integrated circuit and plane frame |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115236809A (en) * | 2022-07-14 | 2022-10-25 | 贵州航天凯山石油仪器有限公司 | Miniaturized opto-coupler |
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