CN203733833U - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
- Publication number
- CN203733833U CN203733833U CN201320897282.0U CN201320897282U CN203733833U CN 203733833 U CN203733833 U CN 203733833U CN 201320897282 U CN201320897282 U CN 201320897282U CN 203733833 U CN203733833 U CN 203733833U
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- China
- Prior art keywords
- silicon substrate
- led
- substrate carrier
- die cavity
- electrode
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- Expired - Lifetime
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- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000003292 glue Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 51
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model provides an LED packaging structure. The LED packaging structure comprises a silicon-based carrier moulded with a cavity; a glass substrate is disposed on the silicon-based carrier; an LED chip is disposed in the cavity of the silicon-based carrier; edges of the glass substrate and the silicon-based carrier are connected, and the connecting positions are sealed through bonding glue layers; the cavity of the silicon-based carrier is hollow; side surfaces of the cavity are respectively provided with reflecting layers; the LED chip is stuck at the bottom of the cavity of the silicon-based carrier; and a first electrode and a second electrode of the LED chip are led out from the bottom of the cavity of the silicon-based carrier respectively through wiring metal layers. When packaging is carried out through the mode, due to the fact that glue is not required to be filled in the cavity, and only the edges of the glass substrate and the silicon-based carrier are required to be in seal connection, raw materials are saved, the problem that in the prior art light-emitting performance of an LED is reduced due to the fact that light is absorbed by the filling glue is prevented, light-emitting efficiency of the LED is improved, energy utilization rates are increased, and cost is saved.
Description
Technical field
The utility model relates to a kind of encapsulating structure, specifically the encapsulating structure of a kind of LED.
Background technology
Light-emitting diode (English: Light-Emitting Diode, be called for short LED) and be a kind of solid-state semiconductor device that can be visible ray by electric energy conversion, it is widely used in the fields such as illumination, LCD backlight plate, control panel, flasher.Light-emitting diode is a kind of of semiconductor diode, electric energy conversion can be become to luminous energy.Light-emitting diode is the same with general-purpose diode to be comprised of a PN junction, also has unilateral conduction.When adding after forward voltage to light-emitting diode, the He You N district, hole that is injected into N district from P district is injected into the electronics in P district, near PN junction in several microns respectively with the electronics in N district and the hole-recombination in P district, produce the fluorescence of spontaneous radiation.In different semi-conducting materials, electronics is different with the residing energy state in hole.How much different the energy discharging when electronics and hole-recombination is, and the energy discharging is more, and the light wavelength of sending is shorter.Conventional is glows, the diode of green glow or gold-tinted.
LED (light-emitting diode) encapsulation refers to the encapsulation of luminescence chip, and this integrated antenna package has relatively big difference mutually.The encapsulation of LED not only requirement can be protected wick, but also can printing opacity.So the encapsulation of LED has special requirement to encapsulating material.Conventional Φ 5mm type LED encapsulation is to smooth out with the fingers the square tube core bonding of length of side 0.25mm or sintering on lead frame, the positive pole of tube core is by spherical contact point and spun gold, bonding is that lead is connected with a pin, negative pole is connected by another pin of reflector and lead frame, and then its top is with epoxy resin enclosed.
A kind of wafer level LED encapsulating structure is also disclosed in Chinese patent literature CN102832330A, comprise LED chip, silicon substrate carrier and filling glue, LED chip comprises chip body, at chip body upper surface, be provided with electrode, described electrode comprises electrode I and electrode II, the top of silicon substrate carrier is provided with glass, the front of silicon substrate carrier is provided with recessed die cavity, the back side is provided with silicon isolated island, the two ends that described silicon isolated island strides across die cavity are connected with silicon substrate carrier, described LED chip is connected with the silicon isolated island in die cavity by connecting glue, described glass is connected by filling glue with silicon substrate carrier, and fill glue and fill full die cavity inside.Upper surface at mold cavity surface and silicon substrate carrier is provided with reflector layer, by this reflector layer, promotes LED light extraction efficiency.The below of described silicon substrate carrier is provided with photosensitive resin layer and metal level, described photosensitive resin layer comprises photosensitive resin layer I and photosensitive resin layer II, described photosensitive resin layer I covers the lower surface of silicon substrate carrier, be island structure, its height flushes with silicon isolated island, described metal level comprises interconnection metal layer and metal derby again, described metal derby is arranged on the lower surface of silicon isolated island, described interconnection metal layer is again connected with electrode I, electrode II, described photosensitive resin layer II covers on metal level, and is provided with several photosensitive resin openings.In the present embodiment, in whole die cavity inside, be all filled with filling glue, owing to filling glue, light had to certain absorption, so this filling glue can affect luminescent properties, the raising energy consumption of LED.
Utility model content
For this reason, technical problem to be solved in the utility model is in LED encapsulating structure, in die cavity, to be full of and to fill glue, shadow to LED luminescent properties in prior art, thereby proposes a kind of LED encapsulating structure that improves LED luminescent properties.
For solving the problems of the technologies described above, of the present utility modelly provide a kind of LED encapsulating structure, comprise the silicon substrate carrier that forms a die cavity, on described silicon substrate carrier, be provided with glass substrate, in the die cavity of described silicon substrate carrier, be provided with LED chip, the edge of described glass substrate and described silicon substrate carrier is connected, at this link position, by glue line, be tightly connected, hollow in the die cavity of described silicon substrate carrier, on the sidewall of described die cavity, be provided with reflector layer, described LED chip sticks on the bottom of the die cavity of described silicon substrate carrier, the first electrode and second electrode of described LED chip are drawn from the bottom of the die cavity of described silicon substrate carrier by interconnection metal layer.
Described LED encapsulating structure, the big up and small down shape of section of the die cavity of described silicon substrate carrier.
Described LED encapsulating structure, the section of the die cavity of described silicon substrate carrier is inverted trapezoidal.
Described LED encapsulating structure, has encapsulated layer in the outer setting of described silicon substrate carrier.
Described LED encapsulating structure, described interconnection metal layer comprises interconnective electrode link and wiring elongated end, described electrode link is connected with the first electrode or second electrode of described LED chip by preformed hole, and described wiring elongated end extends along described encapsulated layer.
Described LED encapsulating structure, the outer surface of described encapsulated layer or described interconnection metal layer is also provided with anti-welding protective layer.
Described LED encapsulating structure is provided with phosphor layer at described glass substrate on the surface of a side of described silicon substrate carrier.
Described LED encapsulating structure, described LED chip is bonded in the bottom of the die cavity of described silicon substrate carrier by tack coat.
Technique scheme of the present utility model mutually this prior art has the following advantages,
(1) the utility model provides a kind of LED encapsulating structure, comprise the silicon substrate carrier that forms a die cavity, on described silicon substrate carrier, be provided with glass substrate, in the die cavity of described silicon substrate carrier, be provided with LED chip, the edge of described glass substrate and described silicon substrate carrier is connected, at this link position, by glue line, be tightly connected, hollow in the die cavity of described silicon substrate carrier, on the sidewall of described die cavity, be provided with reflector layer, described LED chip sticks on the bottom of the die cavity of described silicon substrate carrier, the first electrode and second electrode of described LED chip are drawn from the bottom of the die cavity of described silicon substrate carrier by interconnection metal layer, by which, encapsulate, owing to not needing to fill glue in described die cavity, only need the edge seal of described glass substrate and described silicon substrate carrier to be connected, not only saved raw material, and avoided owing to filling glue, the absorption of light being caused to the problem of the luminescent properties decline of LED in prior art, improved the luminous efficiency of LED, improved the utilance of the energy, saved cost.
(2) LED encapsulating structure described in the utility model, the big up and small down shape of section of the die cavity of described silicon substrate carrier, if the section of the die cavity of silicon substrate carrier is inverted trapezoidal, by up big and down small cavity design, more convenient while not only making described LED install, and the sidewall that makes its formation has larger area and reflective function, the reflector layer that makes to be arranged on sidewall has better reflective function, further improves the luminous efficiency of LED.
(3) LED encapsulating structure described in the utility model; outer setting at described silicon substrate carrier has encapsulated layer; and the outer surface at described encapsulated layer or described interconnection metal layer is also provided with anti-welding protective layer; improve safety and the barrier properties of described LED encapsulating structure, play the effect of insulation and protection.
(4) LED encapsulating structure described in the utility model, described interconnection metal layer comprises interconnective electrode link and wiring elongated end, described electrode link is connected with the first electrode or second electrode of described LED chip by preformed hole, described wiring elongated end extends along described encapsulated layer, like this by described interconnection metal layer, the first electrode of described LED chip and the second electrode are drawn respectively, make it be drawn out to suitable position, facilitated follow-up connection and use.
Accompanying drawing explanation
For content of the present utility model is more likely to be clearly understood, according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein below
Fig. 1 is the structure chart of an embodiment of LED encapsulating structure of the present utility model;
Fig. 2 is the structure chart of another embodiment of LED encapsulating structure of the present utility model.
In figure, Reference numeral is expressed as: 1-silicon substrate carrier, 2-die cavity, 3-glass substrate; 4-LED chip, 5-glue line, 6-reflector layer; 7-the first electrode, 8-the second electrode, 9,10-interconnection metal layer; 91-electrode link; the 92-elongated end that connects up, 11-encapsulated layer, the anti-welding protective layer of 12-; 13-phosphor layer, 14-tack coat.
Embodiment
Embodiment 1:
Of the present utility modelly provide a kind of LED encapsulating structure, comprise the silicon substrate carrier 1 that forms a die cavity 2, this die cavity 2 is positioned at the center of described silicon substrate carrier 1, is the disk of the hollow caving inward.On described silicon substrate carrier 2, be provided with glass substrate 3, described glass substrate 3 is connected with the edge of described silicon substrate carrier 1, at this link position, by glue line 5, is tightly connected.By glue line 5, make to be tightly connected between glass substrate 3 and silicon substrate carrier 1, guaranteed described die cavity 2 inside and exterior insulation.Die cavity 2 inner hollow of silicon substrate carrier 1, without filling the materials such as filling glue of the prior art, have been realized and being tightly connected by the glue line 5 of its edge link position.On the sidewall of described die cavity 2, be provided with reflector layer 6, this reflector layer 6 contributes to promote LED light extraction efficiency.LED chip 4 sticks on the bottom of the die cavity 2 of described silicon substrate carrier 1 by tack coat 14, and the bottom at this die cavity 2 is reserved with preformed hole, be used for drawing the first electrode 7 and the second electrode 8, the first electrode 7 and second electrode 8 of described LED chip 4 are drawn from the bottom of the die cavity 2 of described silicon substrate carrier 1 by interconnection metal layer 9,10 respectively.
By which, carry out LED encapsulation, owing to not needing to fill glue in described die cavity 2, only need described glass substrate 3 to be connected with the edge seal of described silicon substrate carrier 2, not only saved raw material, and avoided owing to filling glue, the absorption of light being caused to the problem of the luminescent properties decline of LED in prior art, improve the luminous efficiency of LED, improved the utilance of the energy, saved cost.
As the execution mode that can replace, the shape that the section of the die cavity 2 of described silicon substrate carrier 1 can be big up and small down, as inverted trapezoidal or lead arc etc.By up big and down small cavity design, more convenient while not only making described LED install, and the sidewall that makes its formation has larger area and reflective function, the reflector layer 6 that makes to be arranged on sidewall has better reflective function, further improves the luminous efficiency of LED
Embodiment 2:
LED encapsulating structure in the present embodiment, on the basis of the LED structure described in embodiment 1, outer setting at described silicon substrate carrier 1 has encapsulated layer 11, and described interconnection metal layer 9 is set to have interconnective electrode link 91 and wiring elongated end 92, described electrode link 91 is connected with the first electrode 7 of described LED chip by preformed hole, and described wiring elongated end 92 extends along described encapsulated layer 11.By described interconnection metal layer 9,10, the first electrode 7 of described LED chip and the second electrode 8 are drawn respectively like this, make it be drawn out to suitable position, facilitated follow-up connection and use.In the present embodiment; except the outer setting at described silicon substrate carrier 1 has encapsulated layer 11; outer surface at described encapsulated layer 11 or described interconnection metal layer 9,10 is also provided with anti-welding protective layer 12, further improves safety and the barrier properties of described LED encapsulating structure, plays the effect of insulation and protection.
As further execution mode, at described glass substrate 3, on the surface of a side of described silicon substrate carrier 1, phosphor layer 13 can also be set, coordinate fluorescer and LED chip, realize the Presentation Function of the LED of different colours different-effect, as shown in Figure 2.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without also giving all execution modes.And among the protection range that the apparent variation of being extended out thus or change are still created in the utility model.
Claims (8)
1. a LED encapsulating structure, comprise the silicon substrate carrier that forms a die cavity, on described silicon substrate carrier, be provided with glass substrate, in the die cavity of described silicon substrate carrier, be provided with LED chip, it is characterized in that: the edge of described glass substrate and described silicon substrate carrier is connected, at this link position, by glue line, be tightly connected, hollow in the die cavity of described silicon substrate carrier, on the sidewall of described die cavity, be provided with reflector layer, described LED chip sticks on the bottom of the die cavity of described silicon substrate carrier, the first electrode and second electrode of described LED chip are drawn from the bottom of the die cavity of described silicon substrate carrier by interconnection metal layer.
2. LED encapsulating structure according to claim 1, is characterized in that, the big up and small down shape of section of the die cavity of described silicon substrate carrier.
3. LED encapsulating structure according to claim 1 and 2, is characterized in that, the section of the die cavity of described silicon substrate carrier is inverted trapezoidal.
4. LED encapsulating structure according to claim 1 and 2, is characterized in that, in the outer setting of described silicon substrate carrier, has encapsulated layer.
5. LED encapsulating structure according to claim 4, it is characterized in that, described interconnection metal layer comprises interconnective electrode link and wiring elongated end, described electrode link is connected with the first electrode or second electrode of described LED chip by preformed hole, and described wiring elongated end extends along described encapsulated layer.
6. LED encapsulating structure according to claim 5, is characterized in that, the outer surface of described encapsulated layer or described interconnection metal layer is also provided with anti-welding protective layer.
7. LED encapsulating structure according to claim 6, is characterized in that, at described glass substrate, on the surface of a side of described silicon substrate carrier, is provided with phosphor layer.
8. LED encapsulating structure according to claim 6, is characterized in that, described LED chip is bonded in the bottom of the die cavity of described silicon substrate carrier by tack coat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320897282.0U CN203733833U (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320897282.0U CN203733833U (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733833U true CN203733833U (en) | 2014-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320897282.0U Expired - Lifetime CN203733833U (en) | 2013-12-25 | 2013-12-25 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203733833U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752584A (en) * | 2013-12-25 | 2015-07-01 | 苏州矩阵光电有限公司 | LED packaging structure |
| CN113299815A (en) * | 2021-05-25 | 2021-08-24 | 深圳市奥蕾达科技有限公司 | LED lamp bead |
-
2013
- 2013-12-25 CN CN201320897282.0U patent/CN203733833U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752584A (en) * | 2013-12-25 | 2015-07-01 | 苏州矩阵光电有限公司 | LED packaging structure |
| CN113299815A (en) * | 2021-05-25 | 2021-08-24 | 深圳市奥蕾达科技有限公司 | LED lamp bead |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |