CN109686654B - Method for improving scribing channel morphology in Lift-off process - Google Patents
Method for improving scribing channel morphology in Lift-off process Download PDFInfo
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- CN109686654B CN109686654B CN201811597810.4A CN201811597810A CN109686654B CN 109686654 B CN109686654 B CN 109686654B CN 201811597810 A CN201811597810 A CN 201811597810A CN 109686654 B CN109686654 B CN 109686654B
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000010410 layer Substances 0.000 claims abstract description 78
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000003292 glue Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000012790 adhesive layer Substances 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 6
- 238000006552 photochemical reaction Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000011796 hollow space material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000012876 topography Methods 0.000 claims 4
- 238000004806 packaging method and process Methods 0.000 abstract description 10
- 238000013461 design Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ethenone Chemical compound C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a method for improving the morphology of a scribing channel in a Lift-off process, which comprises the following steps: coating a negative adhesive layer on the surface of the substrate with the scribing way groove; exposing and developing the negative photoresist layer to form a negative photoresist layer completely covering the grooves of the scribing channels; evaporating a metal film on the upper surfaces of the substrate and the negative glue layer; removing the metal film and the negative adhesive layer on the negative adhesive layer; forming a scribe line groove exposed to the external environment through the metal film. The scheme solves the problem of low packaging yield caused by the fracture of the metal film layer of the scribing channel, improves the morphology of the scribing channel and improves the packaging yield.
Description
Technical Field
The invention relates to the technical field of Schottky semiconductor manufacturing processes, in particular to a method for improving the morphology of a scribing channel in a Lift-off process.
Background
In the manufacturing process of the Schottky chip, in order to meet the packaging requirement, a Lift-off process is utilized to add a Ti/Ni/Ag metal layer on the basis of the original front Al electrode. In the prior art, a Lift-off process is usually realized by adopting a negative adhesive and a Metal positive offset plate of a product, after the Metal positive offset plate of the product is exposed, the size of the top of the negative adhesive appearance is close to that of a scribing channel, and a gap 10 is formed between two sides of the scribing channel and the negative adhesive, which is shown in figure 1; when Ti/Ni/Ag is evaporated due to the fact that negative glue is not covered on the two sides of the scribing channel, part of metal is evaporated to the two sides of the scribing channel, and a metal layer 20 with a step difference is formed on the negative glue with the step difference, and the metal layer is shown in figure 2; and (3) subsequently tearing off the metal on the negative adhesive along with the blue film by using the viscosity of the blue film, and finally removing the negative adhesive by using acetone, so that the evaporation of Ti/Ni/Ag in a specific area is realized, referring to fig. 3, when scribing is carried out at the rear section, the Ti/Ni/Ag at two sides of a scribing way are connected with a substrate 40 through a tube core edge 30, and the metal connection causes the connection short circuit of the positive electrode and the negative electrode of the Schottky device, so that the packaging yield of the product is reduced.
Disclosure of Invention
The invention provides a method for improving the scribing channel morphology of a Lift-off process, which is used for overcoming the defects of low packaging yield and the like in the prior art and improving the scribing channel morphology of the Lift-off process so as to improve the packaging yield of products.
In order to achieve the purpose, the invention provides a method for improving the scribing channel morphology in the Lift-off process, which comprises the following steps:
step 4, removing the metal film and the negative adhesive layer on the negative adhesive layer;
and 5, forming a scribing channel groove exposed to the external environment through the metal film.
According to the method for improving the morphology of the scribing channel in the Lift-off process, the negative glue layer is exposed and developed to form the negative glue layer which completely covers the groove of the scribing channel; there is not the clearance between negative glue film and the scribing channel recess, after evaporating the metal film, the metal film can not form in the scribing channel recess, after removing the negative glue film, form the scribing channel of the clean and tidy appearance, there is not the fracture of metal film in the subsequent cutting and packaging process, thus improve the encapsulation yield, and the means of forming the above-mentioned negative glue layer that covers the scribing channel recess completely is extremely simple, only need increase a photolithography mask, the size at the tube core edge of this photolithography mask is according to forming the photolithography mask that the scribing channel recess used in the technology was unified on the substrate in the front and reducing a predetermined size (for example 5 ~ 15um) can, thereby let the negative glue can cover the nearly 5 ~ 15um at the tube core edge, easily implement on the technology.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a negative photoresist layer formed on a substrate in the prior art;
FIG. 2 is a metal film covering structure formed after an evaporation process for the structure of FIG. 1;
FIG. 3 is a schematic structural diagram of the structure in FIG. 2 after the negative glue layer is removed;
FIG. 4 is a schematic view of a negative photoresist applied to a substrate in an improved process according to an embodiment of the present invention;
FIG. 5 is a schematic illustration of an exposure process for the negative photoresist of FIG. 4;
FIG. 6 is a schematic structural diagram of a negative glue layer formed on a substrate;
FIG. 7 is a metal film covering structure formed after an evaporation process for the structure of FIG. 6;
FIG. 8 is a schematic structural view of the structure in FIG. 7 after a blue film is attached;
FIG. 9 is a schematic diagram of the structure of FIG. 8 after removing the blue film;
FIG. 10 is a schematic structural diagram of the structure in FIG. 9 after the negative glue layer is removed;
FIG. 11 is a process flow diagram of an embodiment of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; the connection can be mechanical connection, electrical connection, physical connection or wireless communication connection; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical solutions in the embodiments of the present invention may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a method for improving the morphology of a scribing channel in a Lift-off process.
Example one
Referring to fig. 4 to 10, the invention provides a method for improving the scribing channel morphology in Lift-off process, comprising the following steps:
step S1, referring to fig. 4, applying a negative adhesive layer 1 on the surface of the substrate having the scribe lane grooves formed thereon; the substrate in the figure comprises Fox (field oxide, silicon dioxide) and Al layers; the formation of the scribe lane grooves is described in detail in the following steps S10, S20;
step S2, referring to fig. 5 and 6, exposing and developing the negative photoresist layer 1 to form a negative photoresist layer completely covering the grooves of the scribe streets; by adding the developing solution after the exposure process is finished, the photosensitive area of the positive photoresist and the non-photosensitive area of the negative photoresist are dissolved in the developing solution. After this step is completed, the pattern in the photoresist layer can be revealed.
The step S2 includes:
step S21, placing the negative photoresist reticle 50 above the negative photoresist layer 1;
step S22, irradiating light with a preset wavelength range above the negative photoresist reticle 50, wherein the light irradiates the negative photoresist layer through the light-transmitting area on the negative photoresist reticle;
the negative photoresist photolithography mask 50 is made of opaque materials, light-transmitting areas are arranged on the negative photoresist photolithography mask corresponding to the scribing channel grooves on the substrate, and the area of each light-transmitting area completely covers the scribing channel groove. The two sides 11 of the projection of the light-transmitting area on the negative glue layer are respectively 5-15 microns wider than the two sides of the scribing channel groove, and preferably 10 microns.
Step S23, after the negative glue layer 1 receives illumination, photochemical reaction occurs in the non-illuminated area;
and step S24, placing the substrate and the negative glue layer in a developing solution, dissolving the negative glue layer of the non-irradiated area, and keeping the negative glue layer of the irradiated area on the substrate to form the negative glue layer completely covering the scribing channel groove. In this step, the photoresist covering the substrate will be selectively irradiated with light of a particular wavelength. The photo-sensitive agent in the photoresist undergoes a photochemical reaction, thereby causing a change in chemical composition in the irradiated areas (photosensitive areas) of the positive photoresist and the unirradiated areas (non-photosensitive areas) of the negative photoresist. These regions where the chemical composition changes can be dissolved in a specific developer in the next step.
The negative photoresist reticle 50 is formed by modifying a metal positive photoresist (i.e., adding a negative photoresist reticle, the formation process of which is to modify the positive photoresist reticle used in the following step S20), and expanding the light transmission regions of the positive photoresist reticle used in the step S20 by more than 10um each to form a photoresist dedicated for Lift-off process, after exposure and development with a new metal plate, the negative photoresist covers approximately 10um of the die edge, and when evaporating the Ti/Ni/Ag film, no metal is evaporated to both sides of the scribe streets, thereby completely solving the problem that part of metal is evaporated to both sides of the scribe streets due to the non-photoresist covering of both sides of the scribe streets.
Step S3, referring to fig. 7, evaporating the metal film 2 (in this embodiment, the metal film sequentially includes Ag, Ni, and Ti layers from top to bottom) on the substrate and the upper surface of the negative photoresist layer 1;
step S4, referring to fig. 8 and 9, removing the metal film 2 and the negative adhesive layer 1 on the negative adhesive layer 1;
the step S4 includes:
step S41, covering a blue film 3 on the negative adhesive layer 1 and the upper surface of the substrate;
step S42, the blue film 3 is removed, and the metal film 2 covered on the negative adhesive layer 1 is removed together with the blue film 3;
and step S43, removing the negative glue layer.
Step S5, see fig. 10, forms scribe lane grooves exposed to the external environment through the metal film.
The two side surfaces of the scribing way groove are step-shaped 4, the step surface is formed by a plane, a plane and a curved surface together, or is formed by a curved surface, and the plane comprises a horizontal plane, a vertical plane or an inclined plane. The clean scribing channel is formed, the Ti/Ni/Ag metal layer is not required to be arranged in the groove of the scribing channel, the metal layer is evaporated and torn off along with the blue film, the metal layer cannot remain in the groove of the scribing channel, the connection of the anode and the cathode of the device cannot be caused, and short circuit failure is avoided.
And step S6, forming a wafer by dividing according to the grooves of the scribing channels and packaging.
The step S1 includes:
step S10, performing metal sputtering treatment on one surface of the base layer provided with the first scribing way groove, and forming a metal layer on the upper surface of the substrate;
step S20, after the metal layer is subjected to photoetching, etching and photoresist removal, a plurality of second scribing channel grooves are formed on the metal layer, each second scribing channel groove corresponds to one first scribing channel groove, and the first scribing channel grooves and the second scribing channel grooves jointly form the scribing channel grooves.
The step S20 includes:
step S201, coating a photoresist layer on the metal layer;
step S202, after exposing and developing the photoresist layer, etching the metal layer;
step S203, the photoresist layer is removed.
The photoresist in step 20 is positive photoresist, and step 202 includes:
step 202A, placing a positive photoresist mask above a positive photoresist layer;
step 202B, irradiating light with a preset wavelength range above the positive photoresist mask, wherein the light irradiates the positive photoresist layer through a light-transmitting area on the positive photoresist mask;
step 202C, after the positive adhesive layer is irradiated, a photochemical reaction occurs in the irradiated area;
step 202D, placing the substrate and the positive glue layer in a developing solution, dissolving the positive glue layer of the irradiated area, keeping the positive glue layer of the non-irradiated area on the substrate, forming a hollow at a position opposite to the groove of the first scribing channel, and exposing the metal layer to the external environment through the hollow;
upon exposure to light, the sensitizer DQ in a positive photoresist undergoes photochemical reaction to form ketene, which is further hydrolyzed to indeno-Carboxylic Acid (CA), which has about 100 times higher solubility in alkaline solvents than the photoresist in the unexposed areas, and which also promotes the dissolution of the phenolic resin. The mask pattern can be transferred by utilizing the different solubility of photosensitive and non-photosensitive photoresist to the alkaline solvent.
Step 202E, etching the metal layer, and corroding the metal layer exposed in the hollow space to form a second scribing channel groove on the metal layer.
The step S1 is preceded by the step S20 and then further comprises:
step S30, reducing the parameters of the width direction of the shading area of the positive photoresist reticle by more than 10 microns to form the technological parameters of the negative photoresist reticle;
and step S40, preparing the negative photoresist photomask according to the technological parameters of the negative photoresist photomask.
The method for improving the morphology of the scribing channel in the Lift-off process provided by the invention thoroughly solves the problem of the finished product rate of product packaging caused by evaporation of part of metal to the two sides of the scribing channel due to no glue covering on the two sides of the scribing channel, and greatly improves the yield of chip packaging finished products; the realization is simple, and the customer (design company) only needs to make the metal layer photomask Dark area undergo the technical operation of reducing by more than 10 um.
If the customer chip design company technology chooses to use the design rule of the modified Metal positive resist technology, only a new Metal mask is added (the dark area of the Metal positive resist die is reduced by 10um each) when the chip tape out (the graphic file of the manufacturing mask), the whole process flow of the wafer factory process is shown in FIG. 11,
according to the method, a Metal positive offset plate is modified, a Metal positive offset plate design rule is formally added into a process technology design rule, a design company takes a standard design rule to design, and finally a photomask company makes a special Metal positive offset plate photomask for a wafer factory process (customer product), so that the problem of product packaging finished product rate caused by that part of Metal is evaporated to the two sides of a scribing street due to the fact that the two sides of the scribing street are not covered by glue is thoroughly solved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (7)
1. A method for improving the morphology of a scribing channel in a Lift-off process is characterized by comprising the following steps:
step 1, coating a negative adhesive layer on the surface of a substrate with a scribing channel groove;
step 2, exposing and developing the negative photoresist layer to form a negative photoresist layer which completely covers the grooves of the scribing channels;
step 3, evaporating a metal film on the upper surfaces of the substrate and the negative glue layer;
step 4, removing the metal film and the negative adhesive layer on the negative adhesive layer;
step 5, forming a scribing channel groove exposed to the external environment through the metal film;
the step 2 comprises the following steps:
step 21, placing a negative photoresist mask above the negative photoresist layer;
step 22, irradiating light with a preset wavelength range above the negative photoresist mask, wherein the light irradiates the negative photoresist layer through a light-transmitting area on the mask;
step 23, after the negative adhesive layer is irradiated, placing the substrate and the negative adhesive layer in a developing solution, dissolving the negative adhesive layer of the non-irradiated area, and keeping the negative adhesive layer of the irradiated area on the substrate to form a negative adhesive layer completely covering the groove of the scribing channel;
the negative photoresist photoetching plate is made of opaque materials, light-transmitting areas are arranged on the photoetching plate corresponding to the scribing channel grooves on the substrate, and the areas of the light-transmitting areas completely cover the scribing channel grooves;
the projection two sides of the light-transmitting area on the negative adhesive layer are respectively wider than the two sides of the scribing channel groove by more than 10 micrometers.
2. The method for improving Lift-off process scribe lane topography as claimed in claim 1, wherein said step 4 comprises:
step 41, covering a blue film on the negative adhesive layer and the upper surface of the substrate;
step 42, removing the blue film, and removing the metal film covered on the negative adhesive layer together with the blue film;
and 43, removing the negative glue layer.
3. The method for improving the morphology of a Lift-off process scribing way as claimed in any one of claims 1 to 2, wherein the two side surfaces of the scribing way groove are stepped, the step surface of the step is formed by a plane, a plane and a curved surface together, or a curved surface, and the plane comprises a horizontal plane, a vertical plane or an inclined plane.
4. The method for improving Lift-off process scribe lane topography as claimed in claim 1 wherein said step 1 is preceded by:
step 10, performing metal sputtering treatment on one surface of the base layer provided with the first scribing channel groove to form a metal layer on the upper surface of the substrate;
and 20, after photoetching, etching and removing the photoresist on the metal layer, forming a plurality of second scribing channel grooves on the metal layer, wherein each second scribing channel groove corresponds to one first scribing channel groove, and the first scribing channel grooves and the second scribing channel grooves jointly form the scribing channel grooves.
5. The method for improving Lift-off process scribe lane topography as claimed in claim 4 wherein said step 20 comprises:
step 201, coating a photoresist layer on a metal layer;
step 202, etching the metal layer after exposing and developing the positive photoresist layer;
step 203, the photoresist layer is removed.
6. The method for improving street profile in Lift-off process as claimed in claim 5, wherein the photoresist in step 20 is a positive photoresist, and said step 202 comprises:
step 202A, placing a positive photoresist mask above a positive photoresist layer;
step 202B, irradiating light with a preset wavelength range above the positive photoresist mask, wherein the light irradiates the positive photoresist layer through a light-transmitting area on the positive photoresist mask;
step 202C, after the positive adhesive layer is irradiated, a photochemical reaction occurs in the irradiated area;
step 202D, placing the substrate and the positive glue layer in a developing solution, dissolving the positive glue layer of the irradiated area, keeping the positive glue layer of the non-irradiated area on the substrate, forming a hollow at a position opposite to the groove of the first scribing channel, and exposing the metal layer to the external environment through the hollow;
step 202E, etching the metal layer, and corroding the metal layer exposed in the hollow space to form a second scribing channel groove on the metal layer.
7. The method for improving Lift-off process scribe lane topography as claimed in claim 6, wherein said step 1 further comprises before:
step 30, reducing the parameters in the width direction of the shading area of the positive photoresist photomask by more than 10 microns to form the technological parameters of the negative photoresist photomask;
and step 40, preparing the negative photoresist photomask according to the technological parameters of the negative photoresist photomask.
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| CN105405819A (en) * | 2015-11-06 | 2016-03-16 | 南通富士通微电子股份有限公司 | Metallized wafer level packaging method |
| CN105679756A (en) * | 2015-11-25 | 2016-06-15 | 杭州立昂微电子股份有限公司 | Terminal structure of semiconductor device top metal and manufacturing method thereof |
| CN108183076A (en) * | 2018-01-12 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | A kind of metal layer stripping means |
| CN108448217A (en) * | 2018-03-01 | 2018-08-24 | 西南科技大学 | The radio frequency microstrip structure of Ti/Ni/Ag material systems |
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