CN104460223A - Mask plate, overlaying alignment method and method for preparing ridged waveguide laser device - Google Patents
Mask plate, overlaying alignment method and method for preparing ridged waveguide laser device Download PDFInfo
- Publication number
- CN104460223A CN104460223A CN201410815582.9A CN201410815582A CN104460223A CN 104460223 A CN104460223 A CN 104460223A CN 201410815582 A CN201410815582 A CN 201410815582A CN 104460223 A CN104460223 A CN 104460223A
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- Prior art keywords
- mask plate
- windows
- semiconductor substrate
- bar paten
- alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention provides a mask plate, an overlaying alignment method and a method for preparing a ridged waveguide laser device. The mask plate comprises a first strip-shaped pattern and an auxiliary alignment window which is a strip-shaped pattern vertical to the first strip-shaped pattern; the first strip-shaped pattern and the auxiliary alignment window are transparent patterns; and before exposure, an alignment condition between the first strip-shaped pattern and a second strip-shaped pattern on a lower semiconductor substrate can be observed through the auxiliary alignment window. According to the mask plate, whether the first strip-shaped pattern aligns with the second strip-shaped pattern on the lower semiconductor substrate or not can be observed by the auxiliary alignment window, and the positions of the first strip-shaped pattern and the second strip-shaped pattern can be conveniently revised, so that the registering degree and the research and development efficiency are improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of mask plate, overlay alignment method and prepare the method for ridge waveguide laser.
Background technology
Photoetching technique utilizes photo-chemical reaction principle and chemistry, physical etchings method in semiconductor photoelectric device or integrated circuit preparation process, being delivered to by mask graph has on the semiconductor substrate of device architecture, forms the technology of effective graphical window or functional graphic.Photoetching process is one of most crucial operation of semiconductor devices technology of preparing.
Cover lithography adopts the different mask of polylith to realize the device fabrication of sandwich construction.For semiconductor laser preparation technology, semiconductor laser preparation technology at least needs Twi-lithography.First utilize mask plate as shown in Figure 1A, by first time optical graving for ridge waveguide structure, then utilize the mask plate shown in Figure 1B to be carry out second time photoetching and alignment on ridge waveguide, realize the Graphic transitions of electrical pumping window.When the reticle designed is positive version, it is lighttight for namely mask only having window part to be other places of printing opacity.
When alignment, can only by coming version board marker.When using the mask plate shown in Figure 1B, as long as be slightly offset board marker, electrical pumping window just likely departs from the chi chung heart or is offset to outside ridge, just again to version, can only affect technique progress and repeatedly likely damage substrate to version.
Summary of the invention
(1) technical matters that will solve
In view of above-mentioned technical matters, the invention provides a kind of mask plate, overlay alignment method and prepare the method for ridge waveguide laser.
(2) technical scheme
According to an aspect of the present invention, a kind of mask plate for bar paten overlay alignment is provided.This mask plate comprises: the first bar paten; And auxiliary alignment windows, be the bar paten vertical with the first bar paten; Wherein, the first bar paten and auxiliary alignment windows are transparent pattern, before exposure, by the alignment case of the second bar paten on auxiliary alignment windows observable first bar paten and lower semiconductor matrix.
According to another aspect of the present invention, a kind of overlay alignment method is additionally provided.This overlay alignment method utilizes above-mentioned mask plate, the first bar paten on this mask plate is aimed at the second bar paten on the semiconductor substrate be positioned at below it, comprise: by aiming at staying with the upper photoetching on semiconductor substrate board marker on mask plate board marker, realize the first bar paten on mask plate and the second bar paten coarse alignment on semiconductor substrate; And by auxiliary alignment windows, observe the alignment case of the second bar paten on the first bar paten and lower semiconductor matrix, realize the first bar paten on mask plate and carefully aim at the second bar paten on semiconductor substrate.
According to a further aspect of the invention, a kind of method preparing ridge waveguide laser is additionally provided.The method utilizes above-mentioned mask plate, and the first bar paten is electrical pumping pattern of windows, and it corresponds to the electrical pumping window of ridge waveguide laser.The method comprises: steps A: on semiconductor substrate, prepare two ditch ridge waveguide structure by first published photoetching and to board marker; Step B: grow insulating medium layer on semiconductor substrate; Step C: spin coating photoresist on semiconductor substrate; Step D: by mask plate realizes aiming at of electrical pumping pattern of windows on mask plate and the ridge waveguide on the semiconductor substrate of below to board marker and auxiliary alignment windows; Step e: exposed the semiconductor substrate below it by mask plate, is transferred to the photoresist above semiconductor substrate by electrical pumping pattern of windows; Step F: electrical pumping pattern of windows is transferred on insulating medium layer; And step G: preparation P face and N face alloying annealing, complete the preparation of ridge waveguide laser.
(3) beneficial effect
Whether the present invention can observe the first bar paten by auxiliary alignment windows and aim at the second bar paten on lower semiconductor matrix, facilitates the correction of both positions, thus reaches raising to version precision and efficiency of research and development.
Accompanying drawing explanation
Figure 1A is for preparing the schematic diagram of the mask plate that ridge waveguide structure uses in prior art semiconductor laser preparation process;
Figure 1B is the schematic diagram of the mask plate realizing the transfer of electrical pumping graph window in prior art semiconductor laser preparation process;
Fig. 2 A and Fig. 2 B is top view and the cross section view of the two ditch ridge waveguides having carried out first time photoetching;
Fig. 3 A and Fig. 3 B is top view and the cross section view of the electrical pumping window having carried out second time photoetching;
Fig. 4 A is for preparing the schematic diagram of the mask plate that ridge waveguide structure uses in designed semiconductor laser preparation process;
Fig. 4 B is the schematic diagram of the mask plate realizing the transfer of electrical pumping graph window in designed semiconductor laser preparation process;
Fig. 4 C is that designed semiconductor laser preparation process is when two editions reticle are to overall pattern schematic diagram during version alignment.
Wherein, mark A, B, C, D and E represent respectively ridge waveguide in reticle, Shuan Gou, to board marker, electrical pumping window and auxiliary alignment windows.Mark A ', B ', C ', D ' and E ' represent respectively ridge waveguide in semiconductor laser, Shuan Gou, to board marker, electrical pumping window and auxiliary alignment windows.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or instructions describe, similar or identical part all uses identical figure number.The implementation not illustrating in accompanying drawing or describe is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.The direction term mentioned in embodiment, such as " on ", D score, "front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate and is not used for limiting the scope of the invention.
Whether the present invention can observe the first bar paten by auxiliary alignment windows and aim at the second bar paten on lower semiconductor matrix, facilitates the correction of position between the two.
In first exemplary embodiment of the present invention, provide a kind of mask plate prepared for ridge waveguide laser instrument.This mask plate realizes forming electrical pumping window on the semiconductor substrate preparing ridge waveguide.Fig. 4 B is the schematic diagram according to embodiment of the present invention mask plate.As shown in Figure 4 B, this mask comprises: electrical pumping pattern of windows D, to board marker C, and the auxiliary alignment windows E that some parallel.
Wherein, electrical pumping pattern of windows D is bar shaped.Auxiliary alignment windows E is equally in bar shaped, and it is vertical with electrical pumping pattern of windows D.The width of auxiliary alignment windows E is between 20 μm ~ 200 μm, and length runs through whole mask plate.Further, electrical pumping pattern of windows D and auxiliary alignment windows E is transparent pattern.
When utilizing the present embodiment mask plate to carry out overlay alignment, by by aiming at board marker of staying with the upper photoetching on semiconductor substrate board marker C, realize the coarse alignment of the ridge waveguide on electrical pumping pattern of windows D and semiconductor substrate; Subsequently, by described auxiliary alignment windows, observe the alignment case of the ridge waveguide on electrical pumping pattern of windows D and lower semiconductor matrix, realize electrical pumping pattern of windows D and aim at the thin of ridge waveguide.
In another embodiment of the present invention, a kind of method preparing ridge waveguide laser is additionally provided.In the present embodiment, need on semiconductor substrate, prepare ridge waveguide laser instrument, the ridge of each laser instrument wide is 10 μm, and electrical pumping window is 5 μm, and length is 4mm.
The present embodiment method uses two mask plates.First mask plates, for the preparation of the two ditch ridge waveguide of laser diode, as shown in Figure 4 A.Second mask plates is the mask plate in above-described embodiment, for preparing electrical pumping window on ridge waveguide, as shown in Figure 4 B.
The method that the present embodiment prepares ridge waveguide laser comprises:
Steps A: prepare two ditch ridge waveguide structure by first published photoetching on the semiconductor substrate of existing device architecture and to board marker;
The two ditch ridge waveguide structure of this preparation and be the semiconductor laser diode ridge waveguide structure preparation method of standard to the steps A of board marker, specifically comprises:
Sub-step A1: be coated with one deck photoresist on the semiconductor substrate having device architecture;
Sub-step A2: adopt common photoetching method, front baking, to version, exposure, development, rear baking, by first published mask graph transfer of semiconductor matrix;
Fig. 4 A is the schematic diagram of the mask plate used in first published photoetching.As shown in Figure 4 A, A represents ridge, and ridge is wide is 10 μm, is spaced apart 350 μm between ridge.B represents two groove structure, and ditch width is 27.5 μm.Dash area represents lightproof part, and transparent part represents light transmission part.
Sub-step A3: the method adopting wet etching or dry etching, prepare two ditch ridge waveguide.
Fig. 2 A and Fig. 2 B is top view and the cross section view of the two ditch ridge waveguides having carried out first time photoetching.As shown in Figure 2 A and 2 B, it is 10 μm that A ' ties ridge wide for ridge waveguide, and its both sides are trench structure B '.350 μm are spaced apart between ridge waveguide.B ' is two groove structures, and ditch width is 27.5 μm.Have board marker C ' between two ridge waveguides.
After this, need on ridge waveguide, prepare electrical pumping window, this electrical pumping window is 5 μm, is spaced apart 350 μm between window, as shown in figs.3 a and 3b prepare the top view after electrical pumping window and cross section view.
Step B: grow SiO on the semiconductor chip with ridge waveguide structure
2insulating medium layer;
Step C: at the SiO of semiconductor chip
2dielectric layer is coated with one deck photoresist;
Step D: by the second mask plates realizes aiming at of electrical pumping pattern of windows on mask plate and the ridge waveguide on semiconductor substrate to board marker and auxiliary alignment windows;
Fig. 4 B is the schematic diagram of the mask plate used in second edition photoetching.As shown in Figure 4 B, D is electrical pumping window, and electrical pumping window is wide is 5 μm, is spaced apart 350 μm between window, and interval between first published ridge is equal.And add auxiliary alignment windows at this mask, as E in Fig. 4 B mark, as the correcting window of alignment to version, auxiliary alignment windows is bar shaped, and width is 50 μm, and auxiliary alignment windows is spaced apart 4mm, is laser instrument maximum length.Dash area is light tight, transparent part printing opacity.
This step specifically comprises:
Sub-step D1: to find in substrate that first time photoetching stays as required to board marker, finely tune the relative position of the second mask and matrix, make two editions board marker is gone up relatively;
Sub-step D2: again by auxiliary pattern window direct vision second edition bar paten whether in the middle of first published bar paten, reduce the alignment time to reach, improve the object to version precision and efficiency of research and development.
When two editions reticle to overall pattern during version alignment as shown in Figure 4 C, except can by " ten " font to board marker (as C in Fig. 4 C mark) to except version, aligning can also be corrected by assistant window E, thus reach accurate aligning.
Step e: exposed the semiconductor substrate below it by described mask plate, is transferred to the photoresist above described semiconductor substrate by described electrical pumping pattern of windows;
After this step, the pattern on photoresist is developed, rear baking.
Step F: by wet etching or dry etching, is transferred to SiO by electrical pumping pattern of windows
2on insulating medium layer;
Fig. 3 A and Fig. 3 B is respectively top view and the cross section view of the ridge waveguide laser after forming electrical pumping window.As shown in Figure 3 A and Figure 3 B, D ' is electrical pumping window, and electrical pumping window is wide is 5 μm, is spaced apart 350 μm between window.E ' is auxiliary alignment windows, and width is 50 μm, and auxiliary alignment windows is spaced apart 4mm, is laser instrument maximum length, and C ' is to board marker.
Step G: preparation P face and N face alloying annealing, complete the preparation of ridge waveguide laser.
This step is the general step of semicon industry, no longer describes in detail herein.
In the present embodiment, mask adds auxiliary alignment windows outside aiming at board marker, whether can observe electrical pumping window at the center of ridge waveguide, and revise, thus reach raising to version precision and efficiency of research and development by auxiliary alignment windows.
So far, by reference to the accompanying drawings the present embodiment has been described in detail.Describe according to above, those skilled in the art should have mask plate of the present invention, overlay alignment method and the method preparing ridge waveguide laser and have clearly been familiar with.
In addition, the above-mentioned definition to each element and method is not limited in various concrete structures, shape or the mode mentioned in embodiment, and those of ordinary skill in the art can change simply it or replace, such as:
(1) " ten " font in mask plate is to all right bar code form of board marker;
(2) wherein prepare ridge waveguide list district laser instrument and also can prepare two-region or multi-region laser instrument;
(3) the method can also be used for the aligning of bar paten in other semiconductor devices preparation process, and is not limited to the preparation of ridge waveguide laser.
In sum, the present invention increases auxiliary alignment windows on alignment mask plate, whether observes electrical pumping window at the center of ridge waveguide, and revise by auxiliary alignment windows, thus reaches raising to version precision and efficiency of research and development.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. for a mask plate for bar paten overlay alignment, it is characterized in that, comprising:
First bar paten; And
Auxiliary alignment windows is the bar paten vertical with described first bar paten;
Wherein, described first bar paten and auxiliary alignment windows are transparent pattern, before exposure, by the alignment case of the second bar paten on the first bar paten described in described auxiliary alignment windows observable and lower semiconductor matrix.
2. mask plate according to claim 1, is characterized in that, comprises some parallel described auxiliary alignment windows, the two auxiliary interval of alignment windows and the measure-alike of semiconductor devices to be prepared.
3. mask plate according to claim 1, is characterized in that, the width of described auxiliary alignment windows is between 20 μm ~ 200 μm.
4. mask plate according to claim 1, is characterized in that, the length of described auxiliary alignment windows runs through whole mask plate.
5. mask plate according to claim 1, is characterized in that, also comprises: to board marker;
Before exposure, by aiming at board marker that this is stayed with the upper photoetching on semiconductor substrate board marker, and by the coarse alignment of the second bar paten on described first bar paten and lower semiconductor matrix.
6. an overlay alignment method, is characterized in that, utilizes the mask plate described in claim 5, is aimed at by the first bar paten on this mask plate, comprising with the second bar paten on the semiconductor substrate be positioned at below it:
By aiming at staying with the upper photoetching on semiconductor substrate board marker on described mask plate board marker, realize the first bar paten on mask plate and the second bar paten coarse alignment on semiconductor substrate; And
By described auxiliary alignment windows, observe the alignment case of the second bar paten on described first bar paten and lower semiconductor matrix, realize the first bar paten on mask plate and carefully aim at the second bar paten on semiconductor substrate.
7. prepare a method for ridge waveguide laser, it is characterized in that, utilize the mask plate described in claim 5, described first bar paten is electrical pumping pattern of windows, and it corresponds to the electrical pumping window of described ridge waveguide laser, and described method comprises:
Steps A: prepare two ditch ridge waveguide structure by first published photoetching on semiconductor substrate and to board marker;
Step B: grow insulating medium layer on semiconductor substrate;
Step C: spin coating photoresist on semiconductor substrate;
Step D: by described mask plate realizes aiming at of electrical pumping pattern of windows on mask plate and the ridge waveguide on the semiconductor substrate of below to board marker and auxiliary alignment windows;
Step e: exposed the semiconductor substrate below it by described mask plate, is transferred to the photoresist above described semiconductor substrate by described electrical pumping pattern of windows;
Step F: electrical pumping pattern of windows is transferred on described insulating medium layer; And
Step G: preparation P face and N face alloying annealing, complete the preparation of ridge waveguide laser.
8. method according to claim 7, is characterized in that, described step D comprises:
Sub-step D1: by aiming at staying with the first published photoetching on semiconductor substrate board marker on described mask plate board marker, realize the coarse alignment of the electrical pumping pattern of windows on mask plate and the ridge waveguide on semiconductor substrate;
Sub-step D2: by described auxiliary alignment windows, observes the alignment case of the electrical pumping pattern of windows on mask plate and the ridge waveguide on semiconductor devices, realizes described electrical pumping pattern of windows and aim at the thin of the ridge waveguide on semiconductor substrate.
9. the method according to claim 7 or 8, is characterized in that, the width of described auxiliary alignment windows is 50 μm, and the interval of parallel two auxiliary alignment windows is identical with the maximum length of described ridge waveguide laser, is 4mm.
10. the method according to claim 7 or 8, is characterized in that, described is " ten " font to board marker or bar code form to board marker to board marker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410815582.9A CN104460223A (en) | 2014-12-23 | 2014-12-23 | Mask plate, overlaying alignment method and method for preparing ridged waveguide laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410815582.9A CN104460223A (en) | 2014-12-23 | 2014-12-23 | Mask plate, overlaying alignment method and method for preparing ridged waveguide laser device |
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| Publication Number | Publication Date |
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| CN104460223A true CN104460223A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410815582.9A Pending CN104460223A (en) | 2014-12-23 | 2014-12-23 | Mask plate, overlaying alignment method and method for preparing ridged waveguide laser device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789181A (en) * | 2016-01-29 | 2016-07-20 | 上海华虹宏力半导体制造有限公司 | Anti-phase lithography aligning mark and manufacturing method thereof |
| CN107452717A (en) * | 2017-08-22 | 2017-12-08 | 长江存储科技有限责任公司 | Semiconductor making method |
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| JP2008040107A (en) * | 2006-08-04 | 2008-02-21 | V Technology Co Ltd | Pattern forming method of black matrix and aligner therefor |
| CN102005497A (en) * | 2009-09-02 | 2011-04-06 | 中国科学院半导体研究所 | Receiving module package method for optical interconnection on chip |
| JP2013037031A (en) * | 2011-08-03 | 2013-02-21 | V Technology Co Ltd | Photomask |
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| CN101119010A (en) * | 2006-08-04 | 2008-02-06 | 三菱电机株式会社 | Semiconductor optical device and manufacturing method therefor |
| JP2008040107A (en) * | 2006-08-04 | 2008-02-21 | V Technology Co Ltd | Pattern forming method of black matrix and aligner therefor |
| CN102005497A (en) * | 2009-09-02 | 2011-04-06 | 中国科学院半导体研究所 | Receiving module package method for optical interconnection on chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789181A (en) * | 2016-01-29 | 2016-07-20 | 上海华虹宏力半导体制造有限公司 | Anti-phase lithography aligning mark and manufacturing method thereof |
| CN105789181B (en) * | 2016-01-29 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | A kind of reverse phase photoetching alignment mark and its production method |
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Application publication date: 20150325 |
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