CN109672367B - Direct current generator based on dynamic PN junction and preparation method thereof - Google Patents
Direct current generator based on dynamic PN junction and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of acquisition of novel green renewable energy sources, and discloses a direct current generator based on a dynamic PN junction. According to the direct current generator based on the dynamic PN junction, the PN semiconductor is contacted to form a built-in potential, and under the action of a built-in electric field, diffused charges generated by the transverse movement of the PN junction in a junction area can be directionally separated to generate current, so that external mechanical energy is directly converted into direct current electric energy, and renewable and clean energy can be provided for various electronic devices and products. Compared with the traditional electromagnetic induction generator and the nanometer generator, the current density of the generator is extremely high, and the insulating layer can improve the generation voltage. The required material is simple, the direct current signal can be output without an additional rectifying circuit, the process flow and the device structure are simple, and the cost is low.
Description
Technical Field
The invention relates to a direct current generator based on a dynamic PN junction and a preparation method thereof, belonging to the technical field of acquisition of novel green renewable energy sources.
Background
At present, electronic products are rapidly developed, and problems of environmental pollution and energy crisis are becoming more severe, people are seeking a miniature portable green clean energy to replace the traditional lithium battery and provide energy for electronic equipment. In recent years, as a new, renewable, miniature and portable green energy device, the nano generator gradually enters the visual field of people, becomes a new star in the research field and the application layer, and has attracted extensive attention in the academic world and the industrial world. The nano-generator can convert various natural and green energies in nature, such as: wind energy, mechanical energy, tidal energy and the like are converted into electric energy to be output, so that energy can be provided for electronic equipment, the electronic equipment is not limited by environmental factors, the negative influence caused by the environmental pollution problem can be reduced to a great extent, and the energy crisis is relieved.
The piezoelectric generator proposed in 2006 and the friction generator proposed in 2012 have been developed rapidly in recent years, but are limited by materials, structures and operation principles, and the generated current and power are not high enough and an alternating current signal is output. In the invention, the direct current generator based on the dynamic PN junction is obtained by utilizing the mutual contact movement between two semiconductor materials with different Fermi energy levels, and the limitation on materials, structures and working principles is reduced. Under the action of a strong built-in electric field of a PN junction area, extremely high current density can be obtained; and the insulating layer can increase the generated voltage. The direct current signal can be output without an additional rectifying circuit, the work is stable, and the process steps and the device structure are simple.
Disclosure of Invention
The invention aims to provide a direct current generator based on a dynamic PN junction and a preparation method thereof.
The invention relates to a direct current generator based on a dynamic PN junction, which comprises two parts, wherein one part is a first semiconductor layer, a first electrode is arranged on the back surface of the first semiconductor layer, and an insulating layer is arranged on the front surface of the first semiconductor layer; the other part is a second semiconductor layer, a second electrode is arranged on one side of the second semiconductor layer, the front surface of the first semiconductor layer and the exposed side of the second semiconductor layer are in mutual contact and can slide relatively to form a dynamic PN junction direct current generator, and the Fermi levels of materials used by the first semiconductor layer and the second semiconductor layer are different.
In the above technical solution, the first semiconductor layer and the second semiconductor layer are made of one of semiconductor materials such as silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride, or indium phosphide, and fermi levels of the two materials are different.
The insulating layer is one of insulating materials such as silicon dioxide, silicon nitride, aluminum oxide, boron nitride and the like, and the thickness of the insulating layer is not more than 500 nm.
The first electrode and the second electrode are both selected from one or more composite electrodes of gold, palladium, silver, copper, titanium, chromium, nickel, platinum and aluminum, and the thickness of the composite electrode is 1-500 nm.
The direct current generator based on the dynamic PN junction can convert one of wind energy, tidal energy, mechanical energy, ocean energy and the like into an electric signal.
The direct current generator based on the dynamic PN junction generates an electric signal which is a direct current signal, and the current density is extremely high and is several orders of magnitude higher than that of other nanometer generators.
The method for preparing the direct current generator based on the dynamic PN junction is characterized by comprising the following steps of:
1) manufacturing a first electrode on the back of the first semiconductor layer;
2) growing an insulating layer on the front surface of the first semiconductor layer;
3) manufacturing a second electrode on the back of the second semiconductor layer;
4) and pressing the front surface of the second semiconductor layer to the surface of the first semiconductor layer insulating layer to form slidable contact to obtain the direct current generator based on the dynamic PN junction, and moving the two semiconductor layers mutually to generate a direct current signal.
Compared with the prior art, the invention has the beneficial effects that:
compared with the traditional nano generator, the direct current generator based on the dynamic PN junction does not need to use piezoelectric semiconductor materials. The direct current can be obtained without adding a rectifying current, the power can be directly supplied to an external circuit, the work is stable, and the process steps and the device structure are simple. The principle and the structure are the first creation and have advancement. By utilizing the mutual contact movement between two semiconductor materials with different Fermi levels, the direct current generator based on the dynamic PN junction is obtained, and the limitation on materials, structures and working principles is reduced. Under the action of a strong built-in electric field of a PN junction area, extremely high current density can be obtained, and the middle insulating layer can improve the generating voltage.
Drawings
FIG. 1 is a schematic structural diagram of a DC generator based on a dynamic PN junction;
FIG. 2 is an I-V plot of a DC generator based on P-type silicon/N-type GaAs dynamic PN junction;
FIG. 3 is a graph of current output versus time for a DC generator based on P-type silicon/N-type GaAs dynamic PN junctions;
FIG. 4 is an I-V plot of a DC generator based on P-type silicon/200 nm silicon dioxide/N-type GaAs dynamic PN junction;
FIG. 5 is a graph of voltage output over time for a DC generator based on P-type silicon/200 nm silicon dioxide/N-type GaAs dynamic PN junctions.
FIG. 6 is a graph of current output versus time for a P-type silicon/N-type silicon dynamic PN junction based DC generator;
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Referring to fig. 1, the dc generator based on the dynamic PN junction of the present invention is manufactured by first fabricating a first electrode 2 on the back surface of a first semiconductor material layer 1, and growing an insulating layer 3 on the front surface; manufacturing a second electrode 5 on the back of the second semiconductor material layer 4; and then pressing one surface of the insulating layer of the first semiconductor material layer 1 to the front surface of the second semiconductor material layer 4 to form movable mutual contact, namely obtaining the direct current generator based on the dynamic PN junction, and moving the two semiconductor layers mutually to obtain direct current output. According to the generator based on the dynamic PN junction, the built-in potential exists in the PN junction area, and under the action of the built-in electric field, diffused charges generated by the transverse movement of the PN junction in the junction area can be directionally separated to generate current, so that external mechanical energy is directly converted into direct current electric energy, and renewable and clean energy can be provided for various electronic devices and products. Compared with the traditional electromagnetic induction generator and the nanometer generator, the current density of the generator is extremely high, and the insulating layer can improve the generation voltage. The required material is simple, the direct current signal can be output without an additional rectifying circuit, the process flow and the device structure are simple, and the cost is low.
Example 1:
1) manufacturing an electrode on the back of the P-type doped silicon wafer, wherein the material of the electrode is 70nm titanium/gold electrode, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) no insulating layer grows on the front surface of the P-type doped silicon wafer;
3) manufacturing an electrode on the back of the N-type doped gallium arsenide chip, wherein the material of the electrode is 70nm titanium/gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
4) pressing the N-type gallium arsenide chip on the P-type silicon chip, contacting and moving mutually to obtain a direct current generator based on a dynamic PN junction, and generating an electric signal.
The P-type silicon/N-type gallium arsenide dynamic PN-based junction direct current generator is obtained by pressing an N-type gallium arsenide chip on a P-type silicon chip, contacting and moving the N-type gallium arsenide chip and the P-type silicon chip mutually. The I-V curve diagram of the DC generator with P-type silicon/N-type GaAs PN junction is shown in FIG. 2, and a built-in electric field is formed by mutual contact and has rectification characteristic. The N-type gaas was moved by hand over the P-type si surface, and an electrical signal was obtained across the electrodes, producing a dc current of about 2 μ a, as shown in fig. 3. The generated voltage is about 0.7V, and the current density is 2A/m2。
Example 2:
1) manufacturing an electrode on the back of a P-type doped silicon wafer, wherein the material of the electrode is a 50nm titanium/gold electrode, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) growing a layer of 20nm silicon dioxide on the front surface of the P-type doped silicon wafer;
3) manufacturing an electrode on the back of the N-type doped gallium arsenide chip, wherein the material of the electrode is 100nm chromium/gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
4) and pressing the N-type gallium arsenide chip on the P-type silicon chip on which a layer of 20nm silicon dioxide grows, and contacting and moving the N-type gallium arsenide chip and the P-type silicon chip mutually to obtain a direct current generator based on the dynamic PN junction to generate an electric signal.
The P-type silicon/silicon dioxide/N-type gallium arsenide dynamic PN-based junction direct current generator presses an N-type gallium arsenide chip on a P-type silicon chip on which a layer of 20nm silicon dioxide growsAnd the contact and the mutual movement can output the electric signal. The I-V curve diagram of the DC generator with P-type silicon/20 nm silicon dioxide/N-type gallium arsenide PN junction is shown in FIG. 4, and a built-in electric field is formed when the P-type silicon/20 nm silicon dioxide/N-type gallium arsenide PN junction is contacted with each other, so that the DC generator has better rectification characteristic. Compared with P-type silicon/N-type gallium arsenide junction, the barrier height is improved, thereby improving the output voltage. The N-type gaas was moved by hand over the P-type si surface, and an electrical signal was obtained across the electrodes, with a voltage of about 2.5V, as shown in fig. 5. The generated direct current is about 1.2 muA, and the current density is 1.2A/m2。
Example 3:
1) manufacturing an electrode on the back of a P-type doped silicon wafer, wherein the material of the electrode is 100nm titanium/gold electrode, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) no insulating layer grows on the front surface of the P-type doped silicon wafer;
3) manufacturing an electrode on the back of the N-type doped silicon wafer, wherein the material of the electrode is a 100nm silver electrode, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
4) pressing the N-type silicon wafer on the P-type silicon wafer, contacting and moving mutually to obtain a DC generator based on the dynamic PN junction, generating an electric signal, wherein the magnitude of the generated DC is about 20 muA, as shown in figure 6. The generated voltage is about 0.1V, and the current density is 107A/m2。
Example 4:
1) manufacturing an electrode on the back of the N-type doped gallium nitride wafer, wherein the material of the electrode is a chromium/gold electrode with the thickness of 70nm, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) growing a layer of 50nm aluminum oxide on the front surface of the N-type doped gallium nitride sheet;
3) manufacturing an electrode on the back of a P-type doped silicon wafer, wherein the material of the electrode is a 70nm silver electrode, sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
4) and pressing the P-type silicon wafer on the N-type gallium nitride wafer, contacting and moving the P-type silicon wafer and the N-type gallium nitride wafer mutually to obtain a direct current generator based on the dynamic PN junction, and generating an electric signal.
Example 5
1) Manufacturing an electrode on the back of the N-type doped silicon wafer, wherein the material of the electrode is 70nm titanium/gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) growing a layer of silicon nitride with the thickness of 10nm on the front surface of the N-type doped silicon wafer;
3) manufacturing an electrode on the back of the P-type doped silicon carbide wafer, wherein the material of the electrode is a 60nm gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
4) pressing the P-type silicon carbide wafer on the N-type silicon wafer, contacting and moving the P-type silicon carbide wafer and the N-type silicon carbide wafer mutually to obtain a direct current generator based on a dynamic PN junction, and generating an electric signal.
Example 6
1) Manufacturing an electrode on the back of the N-type doped gallium nitride wafer, wherein the material of the electrode is 80nm titanium/gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
2) growing a layer of alumina with the thickness of 100nm on the front surface of the N-type doped gallium nitride sheet;
2) manufacturing an electrode on the back of the P-type doped gallium arsenide chip, wherein the material of the electrode is 80nm titanium/gold electrode, then sequentially immersing the obtained sample into acetone and isopropanol, carrying out surface cleaning treatment, cleaning with deionized water, taking out and drying;
3) and pressing the P-type gallium arsenide chip on the N-type gallium nitride chip, contacting and moving the P-type gallium arsenide chip and the N-type gallium nitride chip mutually to obtain a direct current generator based on the dynamic PN junction, and generating an electric signal.
Through a large number of experimental researches, the optimal range of the thickness of the insulating layer in the direct current generator is 50-100nm, when the thickness of the insulating layer is too thick, a carrier cannot pass through, and when the thickness of the insulating layer is too thin, the increase of the potential barrier height is limited. The appropriate thickness of the insulating layer can greatly increase the output voltage of the generator and reduce the current output in a limited way. The Si material has high output current density and relatively low voltage; while the output current density of the gaas material is lower but the voltage is higher.
Claims (6)
1. A direct current generator based on a dynamic PN junction is characterized by comprising two parts, wherein one part is a first semiconductor layer (1), a first electrode (2) is arranged on the back surface of the first semiconductor layer, and an insulating layer (3) is arranged on the front surface of the first semiconductor layer; the other part is a second semiconductor layer (4), a second electrode (5) is arranged on one side of the second semiconductor layer, the front surface of the first semiconductor layer and the exposed side of the second semiconductor layer are in contact with each other and can slide relatively to form a dynamic PN junction direct current generator, and the Fermi levels of materials used for the first semiconductor layer (1) and the second semiconductor layer (4) are different.
2. A dynamic PN junction based dc generator according to claim 1, wherein the first semiconductor layer (1) and the second semiconductor layer (4) are selected from one of si, gaas, ingaas, zno, ge, sin, cdte, gan, and inp.
3. A dynamic PN junction based dc generator according to claim 1, wherein the insulating layer (3) is selected from one of silicon dioxide, silicon nitride, aluminum oxide, boron nitride insulating material, and has a thickness not exceeding 500 nm.
4. The direct current generator based on the dynamic PN junction as claimed in claim 1, wherein the first electrode (2) and the second electrode (5) are both selected from one or more composite electrodes of gold, palladium, copper, silver, titanium, chromium, nickel, platinum and aluminum, and the thickness is 1-500 nm.
5. The direct current generator based on the dynamic PN junction as claimed in claim 1, wherein the direct current generator is used for converting any one of wind energy, tidal energy, mechanical energy and ocean energy into direct current signals to be output.
6. Method for manufacturing a direct current generator based on dynamic PN junctions according to any of claims 1 to 5, characterized in that the manufacturing process comprises the following steps:
1) manufacturing a first electrode (2) on the back of the first semiconductor layer (1);
2) growing an insulating layer (3) on the front surface of the first semiconductor layer (1);
3) manufacturing a second electrode (5) on the back of the second semiconductor layer (4);
4) the front surface of the second semiconductor layer (4) is pressed on the insulating layer (3) of the first semiconductor layer (1) to form slidable contact, a dynamic PN junction-based direct current generator is obtained, and the two semiconductor layers move relatively to generate a direct current signal.
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| CN201811348577.6A CN109672367B (en) | 2018-11-13 | 2018-11-13 | Direct current generator based on dynamic PN junction and preparation method thereof |
| PCT/CN2019/110024 WO2020098417A1 (en) | 2018-11-13 | 2019-10-08 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| US17/319,110 US11522468B2 (en) | 2018-11-13 | 2021-05-13 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
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| WO2020098417A1 (en) | 2018-11-13 | 2020-05-22 | 浙江大学 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| CN111029337B (en) * | 2019-11-18 | 2021-12-21 | 浙江大学 | Multi-energy collection system based on semiconductor heterogeneous integration |
| CN110905723A (en) * | 2019-11-18 | 2020-03-24 | 浙江大学 | Novel wind driven generator with fractal interface structure |
| CN110932590B (en) * | 2019-11-18 | 2021-03-05 | 浙江大学 | Flexible direct current generator based on organic semiconductor film |
| CN110995059A (en) * | 2019-11-18 | 2020-04-10 | 浙江大学 | Marine generator based on novel rotor structure |
| CN111431433B (en) * | 2020-02-19 | 2022-08-05 | 浙江大学 | Direct current generator based on dynamic semiconductor homojunction and preparation method thereof |
| CN111786595B (en) * | 2020-07-09 | 2022-08-02 | 浙江大学 | Novel direct current generator based on graphene/polar liquid/semiconductor dynamic diode and preparation method thereof |
| CN112152509B (en) * | 2020-07-10 | 2022-08-05 | 浙江大学 | Direct current generator based on dynamic diode and preparation method thereof |
| CN113783471B (en) * | 2021-07-16 | 2023-12-08 | 浙江大学 | Thin film dynamic semiconductor-polymer semiconductor heterojunction direct current generator and preparation method thereof |
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| CN102683573A (en) * | 2012-05-09 | 2012-09-19 | 纳米新能源（唐山）有限责任公司 | Nano generator, nano generator set and self-powered system comprising nano generator or nano generator set |
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