CN111029337B - Multi-energy collection system based on semiconductor heterogeneous integration - Google Patents
Multi-energy collection system based on semiconductor heterogeneous integration Download PDFInfo
- Publication number
- CN111029337B CN111029337B CN201911127546.2A CN201911127546A CN111029337B CN 111029337 B CN111029337 B CN 111029337B CN 201911127546 A CN201911127546 A CN 201911127546A CN 111029337 B CN111029337 B CN 111029337B
- Authority
- CN
- China
- Prior art keywords
- energy
- semiconductor layer
- semiconductor
- layer
- collection system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 230000010354 integration Effects 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 230000003068 static effect Effects 0.000 claims abstract description 12
- 238000004146 energy storage Methods 0.000 claims abstract description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910021389 graphene Inorganic materials 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- -1 ITO Chemical compound 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000316887 Saissetia oleae Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a multi-energy collection system based on semiconductor heterogeneous integration, which comprises a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface, wherein the semiconductor heterogeneous integrated chip is connected with the energy storage system; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy or mechanical energy, converting the radio energy, the solar energy or the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or the metal layer is superposed with the second semiconductor layer, is in contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer or the metal layer are also different. Compared with a single energy collection system, the system can generate more electric energy in the same time, and most importantly, the system is not limited by a single energy source and can deal with various special environmental conditions.
Description
Technical Field
The invention relates to a semiconductor heterogeneous integration-based multi-energy collection system, and belongs to the technical field of novel renewable energy acquisition.
Background
The crisis of energy shortage and the problem of environmental pollution are always the focus of attention of modern people, and with the increasing demand for electric energy in modern society, the conversion of various clean renewable energy sources is applied to daily life. Solar energy is used as the final energy source of the earth, the total amount is large, and the environment is protected, so that the radiation is better harvested, the energy challenge is solved, and the environment is protected; electromagnetic waves are also a very huge energy source, and the wireless charging technology can fully utilize the electromagnetic waves; the mechanical energy is not limited by the environment and can be controlled automatically. At present, the application of a device with a single energy source is generally limited by the environment, and a device structure capable of absorbing multiple energy sources simultaneously is needed, so that the multiple energy sources in the environment can be collected and utilized, and the device has wider application occasions.
The static semiconductor heterojunction based on the microwave power generation device can convert a received microwave signal into direct current electric energy to be output, and can also absorb solar energy to be converted into electric energy to be output. When the semiconductor/metal slides on the semiconductor substrate, PN/Schottky junctions are continuously generated and disappeared, direct current is formed along with the directional movement of electrons, and mechanical energy can be converted into electric energy. In the sliding process, carriers in the semiconductor/metal in the dynamic diode can exchange carriers with the heterojunction of the static semiconductor, and the carrier concentration is increased, so that the voltage and current output is effectively improved. The semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. And multiple energy sources collection system compare single energy source collection system produce more electric energy in the same time, and above all the system no longer is restricted to single energy source, can deal with multiple special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Disclosure of Invention
The invention aims to provide a multi-energy collection system based on semiconductor heterogeneous integration.
The invention discloses a multi-energy collection system based on semiconductor heterogeneous integration, which comprises a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy or mechanical energy, converting the radio energy, the solar energy or the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or the metal layer is superposed with the second semiconductor layer, is in contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer or the metal layer are also different.
The static semiconductor heterojunction formed by the first semiconductor and the second semiconductor can receive electromagnetic waves of 1GHz-10 GHz.
The first semiconductor layer, the second semiconductor layer and the third semiconductor layer are all selected from graphene, silicon, gallium arsenide, indium gallium arsenic, molybdenum disulfide, black scale, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride and indium phosphide, and the metal layer can be one or more of gold, iron, palladium, copper, silver, titanium, chromium, nickel, platinum, aluminum, ITO (indium tin oxide), FTO (fluorine doped tin oxide) and AZO (AZO-doped tin oxide).
The system can be manufactured on a PCB, the output current density is high, and the charging speed of energy storage equipment such as a battery is extremely high.
The system outputs direct current electric energy.
The preparation process of the multi-energy collection system based on semiconductor heterogeneous integration can comprise the following steps:
1) firstly, designing and manufacturing a PCB;
2) manufacturing a first semiconductor layer, a second semiconductor layer and a third semiconductor/metal layer on the PCB in sequence; the first semiconductor layer and the second semiconductor layer form a static heterojunction, and the third semiconductor/metal layer is directly arranged on the second semiconductor layer, is in mutual contact and can slide relatively;
3) and then the battery and the interface are soldered on the PCB, and the first semiconductor layer, the second semiconductor layer and the third semiconductor/metal layer are respectively led out through leads and connected to the battery.
Compared with the prior art, the invention has the beneficial effects that:
the semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. Compared with a single energy collection system, the multi-energy collection system can generate more electric energy in the same time, and particularly, a dynamic diode generator with an upper layer composed of a third semiconductor layer or a metal layer and a second semiconductor layer in a chip can effectively regulate and control the carrier transport characteristics of a static diode with a lower layer composed of the second semiconductor layer and the first semiconductor layer, so that the conversion efficiency is effectively improved. Most importantly, the system is not limited to a single energy source and can cope with a plurality of special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Drawings
FIG. 1 is a schematic structural diagram of a multi-energy collection system based on semiconductor heterogeneous integration;
FIG. 2 is a continuous voltage generation plot of graphene/gallium arsenide based semiconductor heterojunctions at 1GHz emission source;
FIG. 3 is a graph of continuous current generation based on graphene/N-type silicon sliding on each other;
FIG. 4 is a graph of continuous voltage generation based on graphene/N-type silicon sliding over each other;
fig. 5 is a graph of continuous current generation enhanced by a graphene/gallium arsenide-based semiconductor heterojunction in a dynamic diode.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Referring to fig. 1, the multi-energy collection system based on semiconductor heterogeneous integration is composed of a semiconductor heterogeneous integrated chip, an energy storage system, a power supply interface and the like. The semiconductor heterogeneous chip can collect radio energy, solar energy and mechanical energy, convert the radio energy, the solar energy and the mechanical energy into electric energy, store the electric energy in an energy storage system and supply power to electronic equipment. The semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, electromagnetic waves can be absorbed and converted into electric energy (as shown in figure 2), solar energy can be absorbed and converted into electric energy, and the Fermi levels of materials used for the first semiconductor layer and the second semiconductor layer are different. The second semiconductor layer and the third semiconductor/metal layer of the semiconductor heterogeneous chip are superposed, contacted and relatively slide, and direct current electric energy output is generated by sliding, wherein the Fermi levels of the materials used for the second semiconductor layer and the third semiconductor/metal layer are different. The dynamic diode generator can effectively regulate and control the carrier transport characteristics of the lower static diode, so that the output current is effectively improved. The generated electric energy can be stored in a battery, and can supply power to the electronic equipment through an interface, and the devices are connected and integrated on a PCB.
The semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. And multiple energy sources collection system compare single energy source collection system produce more electric energy in the same time, and above all the system no longer is restricted to single energy source, can deal with multiple special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Example 1:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the graphene/gallium arsenide heterogeneous device collects electromagnetic waves and converts the electromagnetic waves into electric energy to be stored in the battery;
5) sliding the front surface of the N-type silicon wafer on graphene to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in a battery;
6) the battery can supply power to the electronic equipment through the USB interface.
The N-type silicon/graphene/gallium arsenide heterogeneous integrated multi-energy collection system can effectively collect electromagnetic waves and mechanical energy. Static graphene/gallium arsenide can effectively absorb electromagnetic waves, as shown in fig. 2. The dynamic N-type silicon/graphene heterojunction can effectively collect mechanical energy, and output voltage and current are shown in fig. 3 and 4. Under the action of the dynamic diode, the absorption of the static diode to the electromagnetic wave is effectively enhanced, and the current output is shown in fig. 5.
Example 2:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the system is placed in an electromagnetic wave environment of 1GHz-10GHz, and can generate direct current electric energy to be output and stored in a battery;
5) sliding the front surface of the metal aluminum on the graphene to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in the battery;
6) the battery can supply power to the electronic equipment through the USB interface.
Example 3:
1) designing and manufacturing a PCB;
2) manufacturing an N-type gallium arsenide/P-type gallium arsenide heterogeneous device, and connecting the N-type gallium arsenide/P-type gallium arsenide heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the system is placed under the sunlight, and can generate direct current electric energy to be output and stored in a battery;
5) sliding the front surface of the metal aluminum on the P-type gallium arsenide to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in the battery;
6) the battery can supply power to the electronic equipment through the USB interface.
Example 4:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) under the environment without light and specific electromagnetic waves, the front surface of an N-type silicon wafer slides on graphene to generate direct current electric energy, and the direct current electric energy is output and stored in a battery;
5) the battery can supply power to the electronic equipment through the USB interface.
Claims (3)
1. A multi-energy collection system based on semiconductor heterogeneous integration is characterized by comprising a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy and mechanical energy, converting the radio energy, the solar energy and the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer (1), a second semiconductor layer (2) and a third semiconductor layer or metal layer (3), wherein the first semiconductor layer and the second semiconductor layer are stacked to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or metal layer (3) and the second semiconductor layer (2) are stacked, contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer and the second semiconductor layer are also different.
2. A semiconductor heterogeneous integration based multi-energy collection system according to claim 1, wherein the first semiconductor layer (1), the second semiconductor layer (2) and the third semiconductor layer are selected from graphene, silicon, gallium arsenide, indium gallium arsenide, molybdenum disulfide, black phosphorus, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride and indium phosphide.
3. The semiconductor heterogeneous integration based multi-energy collection system according to claim 1, wherein the metal layer is selected from one or more of gold, iron, palladium, copper, silver, titanium, chromium, nickel, platinum, aluminum, ITO, FTO and AZO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911127546.2A CN111029337B (en) | 2019-11-18 | 2019-11-18 | Multi-energy collection system based on semiconductor heterogeneous integration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911127546.2A CN111029337B (en) | 2019-11-18 | 2019-11-18 | Multi-energy collection system based on semiconductor heterogeneous integration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111029337A CN111029337A (en) | 2020-04-17 |
| CN111029337B true CN111029337B (en) | 2021-12-21 |
Family
ID=70200425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911127546.2A Active CN111029337B (en) | 2019-11-18 | 2019-11-18 | Multi-energy collection system based on semiconductor heterogeneous integration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111029337B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111641275B (en) * | 2020-05-21 | 2022-04-01 | 浙江大学 | Graphene/monoatomic layer GaS/GaAs radio generator and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449849A (en) * | 2016-10-28 | 2017-02-22 | 浙江大学 | Graphene/copper zinc tin sulfur (CZTS) thin-film solar battery and production method thereof |
| CN109037352A (en) * | 2018-07-06 | 2018-12-18 | 浙江大学 | A kind of dc generator and preparation method thereof based on mobile schottky junction |
| CN109921687A (en) * | 2019-01-02 | 2019-06-21 | 浙江大学 | A kind of layered semiconductor-semiconductor dynamic PN junction dc generator and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101221501B1 (en) * | 2011-06-10 | 2013-01-15 | 동국대학교 산학협력단 | Apparatus of generating electricity by using nano-wires |
| CN105720127A (en) * | 2016-02-05 | 2016-06-29 | 浙江大学 | Multifunctional generator based on graphene/semiconductor heterojunction and manufacturing method thereof |
| CA2993857A1 (en) * | 2018-02-02 | 2019-08-02 | Ferguson Technologies Inc. | Systems and methods for generating electrical energy |
| CN109672367B (en) * | 2018-11-13 | 2020-01-14 | 浙江大学 | Direct current generator based on dynamic PN junction and preparation method thereof |
-
2019
- 2019-11-18 CN CN201911127546.2A patent/CN111029337B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449849A (en) * | 2016-10-28 | 2017-02-22 | 浙江大学 | Graphene/copper zinc tin sulfur (CZTS) thin-film solar battery and production method thereof |
| CN109037352A (en) * | 2018-07-06 | 2018-12-18 | 浙江大学 | A kind of dc generator and preparation method thereof based on mobile schottky junction |
| CN109921687A (en) * | 2019-01-02 | 2019-06-21 | 浙江大学 | A kind of layered semiconductor-semiconductor dynamic PN junction dc generator and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Co-harvesting Light and Mechanical Energy Based on Dynamic Metal/Perovskite Schottky Junction;Zhenzhen Hao;《Matter》;20190904;第1卷(第3期);639-649 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111029337A (en) | 2020-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Benami | Effect of CZTS parameters on photovoltaic solar cell from numerical simulation | |
| Weliwaththage et al. | Solar energy technology | |
| Bhaskar et al. | A simple PV array modeling using MATLAB | |
| CN111029337B (en) | Multi-energy collection system based on semiconductor heterogeneous integration | |
| CN107017824A (en) | A kind of electric combined generating device of photoelectric heat | |
| Singh et al. | A Study of an Inorganic-Organic HTM on the Implementation of Lead based PSC Device | |
| Mahtab et al. | Impact analysis of anti-reflection coating on PiN solar device | |
| Biswas et al. | Design and Simulation of an Environment‐Friendly ZrS2/CuInS2 Thin Film Solar Cell Using SCAPS 1D Software | |
| CN214152915U (en) | Solar cell module | |
| CN206271724U (en) | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions | |
| Bouabdelli et al. | Theoretical Investigation on Improvement of CIGS-based Solar Cells | |
| Naseri et al. | An efficient double junction CIGS solar cell using a 4H-SiC nano layer | |
| EP2339644A2 (en) | Photovoltaic cell | |
| Shamim et al. | Design, performance analysis and efficiency optimization of copper indium gallium selenide (CIGS) solar cell | |
| CN102855002A (en) | Mouse | |
| Soro et al. | Numerical Simulation of Tandem Using ZnS as a Buffer Layer Cu I (1-x) CaxSe2/CuGaSe2 | |
| Zaidi et al. | Evaluating the Efficiency of CuInGaSe2 Based Solar Cells: CuSCN Hole Transport Layer (HTL) Effect | |
| Younas et al. | Increasing Efficiency of Solar Panels via Photovoltaic Materials | |
| Babychenko | Multicomponent semiconductor structures in the design of solar cells | |
| Hossain et al. | Design of a high efficiency ultrathin CdTe/CdS pin solar cell with optimized thickness and doping density of different layers | |
| Cruz-Campa et al. | Thin and small form factor cells: Simulated behavior | |
| CN101882638B (en) | Solar battery based on TCO (Transparent Conductive Oxide) film and bonding technique | |
| Moin et al. | Simulation based IV Characteristics Analysis of GaAs and InP Solar Cell | |
| US20110056558A1 (en) | Solar cell | |
| Ringel et al. | Photovoltaic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |