CN111029337A - Multi-energy collection system based on semiconductor heterogeneous integration - Google Patents
Multi-energy collection system based on semiconductor heterogeneous integration Download PDFInfo
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- CN111029337A CN111029337A CN201911127546.2A CN201911127546A CN111029337A CN 111029337 A CN111029337 A CN 111029337A CN 201911127546 A CN201911127546 A CN 201911127546A CN 111029337 A CN111029337 A CN 111029337A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Abstract
The invention discloses a multi-energy collection system based on semiconductor heterogeneous integration, which comprises a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface, wherein the semiconductor heterogeneous integrated chip is connected with the energy storage system; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy or mechanical energy, converting the radio energy, the solar energy or the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or the metal layer is superposed with the second semiconductor layer, is in contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer or the metal layer are also different. Compared with a single energy collection system, the system can generate more electric energy in the same time, and most importantly, the system is not limited by a single energy source and can deal with various special environmental conditions.
Description
Technical Field
The invention relates to a semiconductor heterogeneous integration-based multi-energy collection system, and belongs to the technical field of novel renewable energy acquisition.
Background
The crisis of energy shortage and the problem of environmental pollution are always the focus of attention of modern people, and with the increasing demand for electric energy in modern society, the conversion of various clean renewable energy sources is applied to daily life. Solar energy is used as the final energy source of the earth, the total amount is large, and the environment is protected, so that the radiation is better harvested, the energy challenge is solved, and the environment is protected; electromagnetic waves are also a very huge energy source, and the wireless charging technology can fully utilize the electromagnetic waves; the mechanical energy is not limited by the environment and can be controlled automatically. At present, the application of a device with a single energy source is generally limited by the environment, and a device structure capable of absorbing multiple energy sources simultaneously is needed, so that the multiple energy sources in the environment can be collected and utilized, and the device has wider application occasions.
The static semiconductor heterojunction based on the microwave power generation device can convert a received microwave signal into direct current electric energy to be output, and can also absorb solar energy to be converted into electric energy to be output. When the semiconductor/metal slides on the semiconductor substrate, PN/Schottky junctions are continuously generated and disappeared, direct current is formed along with the directional movement of electrons, and mechanical energy can be converted into electric energy. In the sliding process, carriers in the semiconductor/metal in the dynamic diode can exchange carriers with the heterojunction of the static semiconductor, and the carrier concentration is increased, so that the voltage and current output is effectively improved. The semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. And multiple energy sources collection system compare single energy source collection system produce more electric energy in the same time, and above all the system no longer is restricted to single energy source, can deal with multiple special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Disclosure of Invention
The invention aims to provide a multi-energy collection system based on semiconductor heterogeneous integration.
The invention discloses a multi-energy collection system based on semiconductor heterogeneous integration, which comprises a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy or mechanical energy, converting the radio energy, the solar energy or the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or the metal layer is superposed with the second semiconductor layer, is in contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer or the metal layer are also different.
The static semiconductor heterojunction formed by the first semiconductor and the second semiconductor can receive electromagnetic waves of 1GHz-10 GHz.
The first semiconductor layer, the second semiconductor layer and the third semiconductor layer are all selected from graphene, silicon, gallium arsenide, indium gallium arsenic, molybdenum disulfide, black scale, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride and indium phosphide, and the metal layer can be one or more of gold, iron, palladium, copper, silver, titanium, chromium, nickel, platinum, aluminum, ITO (indium tin oxide), FTO (fluorine doped tin oxide) and AZO (AZO-doped tin oxide).
The system can be manufactured on a PCB, the output current density is high, and the charging speed of energy storage equipment such as a battery is extremely high.
The system outputs direct current electric energy.
The preparation process of the multi-energy collection system based on semiconductor heterogeneous integration can comprise the following steps:
1) firstly, designing and manufacturing a PCB;
2) manufacturing a first semiconductor layer, a second semiconductor layer and a third semiconductor/metal layer on the PCB in sequence; the first semiconductor layer and the second semiconductor layer form a static heterojunction, and the third semiconductor/metal layer is directly arranged on the second semiconductor layer, is in mutual contact and can slide relatively;
3) and then the battery and the interface are soldered on the PCB, and the first semiconductor layer, the second semiconductor layer and the third semiconductor/metal layer are respectively led out through leads and connected to the battery.
Compared with the prior art, the invention has the beneficial effects that:
the semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. Compared with a single energy collection system, the multi-energy collection system can generate more electric energy in the same time, and particularly, a dynamic diode generator with an upper layer composed of a third semiconductor layer or a metal layer and a second semiconductor layer in a chip can effectively regulate and control the carrier transport characteristics of a static diode with a lower layer composed of the second semiconductor layer and the first semiconductor layer, so that the conversion efficiency is effectively improved. Most importantly, the system is not limited to a single energy source and can cope with a plurality of special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Drawings
FIG. 1 is a schematic structural diagram of a multi-energy collection system based on semiconductor heterogeneous integration;
FIG. 2 is a continuous voltage generation plot of graphene/gallium arsenide based semiconductor heterojunctions at 1GHz emission source;
FIG. 3 is a graph of continuous current generation based on graphene/N-type silicon sliding on each other;
FIG. 4 is a graph of continuous voltage generation based on graphene/N-type silicon sliding over each other;
fig. 5 is a graph of continuous current generation enhanced by a graphene/gallium arsenide-based semiconductor heterojunction in a dynamic diode.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Referring to fig. 1, the multi-energy collection system based on semiconductor heterogeneous integration is composed of a semiconductor heterogeneous integrated chip, an energy storage system, a power supply interface and the like. The semiconductor heterogeneous chip can collect radio energy, solar energy and mechanical energy, convert the radio energy, the solar energy and the mechanical energy into electric energy, store the electric energy in an energy storage system and supply power to electronic equipment. The semiconductor heterogeneous integrated chip comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer or a metal layer, wherein the first semiconductor layer and the second semiconductor layer are superposed to form a static semiconductor heterojunction, electromagnetic waves can be absorbed and converted into electric energy (as shown in figure 2), solar energy can be absorbed and converted into electric energy, and the Fermi levels of materials used for the first semiconductor layer and the second semiconductor layer are different. The second semiconductor layer and the third semiconductor/metal layer of the semiconductor heterogeneous chip are superposed, contacted and relatively slide, and direct current electric energy output is generated by sliding, wherein the Fermi levels of the materials used for the second semiconductor layer and the third semiconductor/metal layer are different. The dynamic diode generator can effectively regulate and control the carrier transport characteristics of the lower static diode, so that the output current is effectively improved. The generated electric energy can be stored in a battery, and can supply power to the electronic equipment through an interface, and the devices are connected and integrated on a PCB.
The semiconductor heterojunction-based multi-energy collection system can convert electromagnetic energy, solar energy and mechanical energy into direct current electric energy to be output, and is high in conversion efficiency, simple in process and convenient to popularize. And multiple energy sources collection system compare single energy source collection system produce more electric energy in the same time, and above all the system no longer is restricted to single energy source, can deal with multiple special environmental conditions. For example, the mechanical energy can be utilized to generate electric energy output under the conditions of no light and no specific electromagnetic wave, and the application range is wider.
Example 1:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the graphene/gallium arsenide heterogeneous device collects electromagnetic waves and converts the electromagnetic waves into electric energy to be stored in the battery;
5) sliding the front surface of the N-type silicon wafer on graphene to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in a battery;
6) the battery can supply power to the electronic equipment through the USB interface.
The N-type silicon/graphene/gallium arsenide heterogeneous integrated multi-energy collection system can effectively collect electromagnetic waves and mechanical energy. Static graphene/gallium arsenide can effectively absorb electromagnetic waves, as shown in fig. 2. The dynamic N-type silicon/graphene heterojunction can effectively collect mechanical energy, and output voltage and current are shown in fig. 3 and 4. Under the action of the dynamic diode, the absorption of the static diode to the electromagnetic wave is effectively enhanced, and the current output is shown in fig. 5.
Example 2:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the system is placed in an electromagnetic wave environment of 1GHz-10GHz, and can generate direct current electric energy to be output and stored in a battery;
5) sliding the front surface of the metal aluminum on the graphene to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in the battery;
6) the battery can supply power to the electronic equipment through the USB interface.
Example 3:
1) designing and manufacturing a PCB;
2) manufacturing an N-type gallium arsenide/P-type gallium arsenide heterogeneous device, and connecting the N-type gallium arsenide/P-type gallium arsenide heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) the system is placed under the sunlight, and can generate direct current electric energy to be output and stored in a battery;
5) sliding the front surface of the metal aluminum on the P-type gallium arsenide to generate direct current electric energy, outputting the direct current electric energy and storing the direct current electric energy in the battery;
6) the battery can supply power to the electronic equipment through the USB interface.
Example 4:
1) designing and manufacturing a PCB;
2) manufacturing a gallium arsenide/graphene heterogeneous device, and connecting the gallium arsenide/graphene heterogeneous device to a PCB (printed circuit board);
3) soldering the battery, the interface and the like on the PCB;
4) under the environment without light and specific electromagnetic waves, the front surface of an N-type silicon wafer slides on graphene to generate direct current electric energy, and the direct current electric energy is output and stored in a battery;
5) the battery can supply power to the electronic equipment through the USB interface.
Claims (3)
1. A multi-energy collection system based on semiconductor heterogeneous integration is characterized by comprising a semiconductor heterogeneous integrated chip, an energy storage system and a power supply interface; the semiconductor heterogeneous integrated chip is used for collecting radio energy, solar energy or mechanical energy, converting the radio energy, the solar energy or the mechanical energy into electric energy, storing the electric energy in an energy storage system and supplying power to the electronic equipment through a power supply interface; the semiconductor heterogeneous integrated chip comprises a first semiconductor layer (1), a second semiconductor layer (2) and a third semiconductor layer or metal layer (3), wherein the first semiconductor layer and the second semiconductor layer are stacked to form a static semiconductor heterojunction, the Fermi levels of the first semiconductor layer and the second semiconductor layer are different, the third semiconductor layer or metal layer (3) and the second semiconductor layer (2) are stacked, contact with each other and can slide relatively, and the Fermi levels of the third semiconductor layer and the second semiconductor layer are also different.
2. A semiconductor heterogeneous integration based multi-energy collection system according to claim 1, wherein the first semiconductor layer (1), the second semiconductor layer (2) and the third semiconductor layer are selected from graphene, silicon, gallium arsenide, indium gallium arsenide, molybdenum disulfide, black scale, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride and indium phosphide.
3. The semiconductor heterogeneous integration based multi-energy collection system according to claim 1, wherein the metal layer is selected from one or more of gold, iron, palladium, copper, silver, titanium, chromium, nickel, platinum, aluminum, ITO, FTO and AZO.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111641275A (en) * | 2020-05-21 | 2020-09-08 | 浙江大学 | Graphene/monoatomic layer GaS/GaAs radio generator and manufacturing method thereof |
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