CN109672367A - A kind of dc generator and preparation method thereof based on dynamic PN junction - Google Patents
A kind of dc generator and preparation method thereof based on dynamic PN junction Download PDFInfo
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- CN109672367A CN109672367A CN201811348577.6A CN201811348577A CN109672367A CN 109672367 A CN109672367 A CN 109672367A CN 201811348577 A CN201811348577 A CN 201811348577A CN 109672367 A CN109672367 A CN 109672367A
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract
The present invention relates to novel green renewable energy acquiring technology fields, disclose a kind of dc generator based on dynamic PN junction, it is mainly made of two kinds of semiconductor materials with different fermi levels, is mutually shifted between two kinds of semiconductor layers and DC signal output can be obtained.Dc generator based on dynamic PN junction of the invention, PN semiconductor contact forms a Built-in potential, under the action of built in field, the diffusion charge meeting directional separation that PN junction transverse shifting generates in interface, generate electric current, to which extraneous mechanical energy is converted directly into direct current energy, renewable, clean energy resource can be provided for various electronic equipments and product.Compared with traditional induction generator, nano generator, this dynamo current very high density, and generating voltage can be improved in insulating layer.Material requested is simple and does not need additional rectification circuit and can export DC signal, and process flow and device architecture are simple, at low cost.
Description
Technical field
The present invention relates to a kind of dc generator and preparation method thereof based on dynamic PN junction, it is renewable to belong to novel green
Energy acquiring technology field.
Background technique
In today that electronic product fast development and environmental pollution, problem of energy crisis are increasingly serious, people are sought for
A kind of miniature, green clean energy resource that can be portable substitutes traditional lithium battery, provides energy for electronic equipment.In recent years,
As a kind of novel, renewable, micro portable green energy resource device, nano generator progresses into the visual field of people, becomes
Nova in research field and application causes the extensive concern of academia and industrial circle.Nano generator can incite somebody to action oneself
A variety of natural, green energies in right boundary, such as: wind energy, mechanical energy, tide energy etc. are converted into power output, so as to
Energy is provided for electronic equipment, is not limited by environmental factor, largely can reduce problem of environmental pollution bring
Negative effect, and alleviating energy crisis.
The piezoelectric generators proposed in 2006 and the friction generator proposed in 2012 develop rapidly in recent years, but limited
In material, structure and working principle, the electric current and power of power generation are high not enough and what is exported is ac signal.In this hair
In bright, we have been obtained using the movement that contacts with each other between two kinds of semiconductor materials with different fermi levels based on dynamic
The dc generator of state PN junction reduces the limitation to material, structure and working principle.Extremely strong built-in electricity in PN junction interface
Under the action of, available high current density；And generating voltage can be improved in insulating layer.Additional rectification circuit is not needed
I.e. exportable DC signal, the operation is stable, processing step and device architecture are simple.
Summary of the invention
The purpose of the present invention is to provide a kind of dc generator and preparation method thereof based on dynamic PN junction.
Dc generator based on dynamic PN junction of the invention, the dc generator include two parts, and a part is first
Kind semiconductor layer is equipped with first electrode at its back side, and front is equipped with a layer insulating；Another part is second of semiconductor layer,
It is equipped with second electrode in one side, the front of the first semiconductor layer and the exposed side of second of semiconductor layer contact with each other and can
Opposite sliding, forms dynamic PN junction dc generator, used in described the first semiconductor layer and second of semiconductor layer
The fermi level of material is different.
In above-mentioned technical proposal, the first described semiconductor layer and second of semiconductor layer are silicon, GaAs, indium gallium
One of semiconductor materials such as arsenic, zinc oxide, germanium, silicon nitride, cadmium telluride, gallium nitride or indium phosphide, and two kinds of materials
Fermi level is different.
The insulating layer is one of insulating materials such as silica, silicon nitride, aluminium oxide, boron nitride, and thickness is not
More than 500nm.
The first electrode and second electrode be selected from one of gold, palladium, silver, copper, titanium, chromium, nickel, platinum and aluminium or
Several combination electrode, with a thickness of 1-500nm.
The dc generator based on dynamic PN junction, can will be in wind energy, tide energy, mechanical energy, ocean energy etc.
One kind being converted to electric signal.
The dc generator based on dynamic PN junction, the electric signal of generation are DC signal, and current density pole
Height, several orders of magnitude higher than other nano generators.
The method for preparing the above-mentioned dc generator based on dynamic PN junction, which comprises the steps of:
1) first electrode is made at the first semiconductor layer back side；
2) layer insulating is grown in the first semiconductor layer front；
3) first electrode is made at second of the semiconductor layer back side；
4) second of semiconductor layer front is pressed onto the formation of the first semiconductor layer surface of insulating layer slidably to contact, is based on
Two kinds of semiconductor layers are mutually shifted, that is, can produce DC signal by the dc generator of dynamic PN junction.
Compared with the prior art, the invention has the beneficial effects that:
Compared with traditional nano generator, the dc generator of the invention based on dynamic PN junction is not needed using piezoelectricity half
Conductor material.And do not need additional rectified current and direct current can be obtained, it can power directly to external circuit, the operation is stable,
Processing step and device architecture are simple.Belong in principle and structure it is pioneering, have advance.There are different Fermi's energy using two kinds
Grade semiconductor material between the movement that contacts with each other, obtained the dc generator based on dynamic PN junction, reduce to material,
The limitation of structure and working principle.Under the action of the extremely strong built in field in PN junction interface, available high electric current is close
Degree, and generating voltage can be improved in intermediate insulating layer.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the dc generator based on dynamic PN junction；
Fig. 2 is the I-V curve figure based on P-type silicon/N-type GaAs dynamic PN junction dc generator；
Fig. 3 is that the electric current output based on P-type silicon/N-type GaAs dynamic PN junction dc generator changes over time figure；
Fig. 4 is the I-V curve figure based on P-type silicon/200nm silica/N-type GaAs dynamic PN junction dc generator；
Fig. 5 be the voltage output based on P-type silicon/200nm silica/N-type GaAs dynamic PN junction dc generator at any time
Between variation diagram.
Fig. 6 is that the electric current output based on P-type silicon/N-type silicon dynamic PN junction dc generator changes over time figure；
Specific embodiment
The present invention will be further described in the following with reference to the drawings and specific embodiments.
Referring to Fig.1, the dc generator of the invention based on dynamic PN junction, first at the first 1 back side of semiconductor material layer
Make first electrode 2, one layer insulating 3 of front growth；Second electrode 5 is made at second of 4 back side of semiconductor material layer again；It
Afterwards by the first semiconductor material layer 1 insulate it is laminated be pressed onto the front of second of semiconductor material layer 4 formed it is moveable mutual
Contact is mutually shifted that direct current can be obtained is defeated between two kinds of semiconductor layers to get the dc generator based on dynamic PN junction is arrived
Out.Generator based on dynamic PN junction of the invention, there are Built-in potentials in PN junction interface, under the action of built in field, interface
The diffusion charge meeting directional separation that interior PN junction transverse shifting generates, generates electric current, so that extraneous mechanical energy is converted directly into
Direct current energy can provide renewable, clean energy resource for various electronic equipments and product.With traditional induction generator,
Nano generator is compared, this dynamo current very high density, and generating voltage can be improved in insulating layer.Material requested is simply and not
Need additional rectification circuit that can export DC signal, process flow and device architecture are simple, at low cost.
Embodiment 1:
1) p-type doping silicon wafer on the back side make electrode, material be 70nm titanium/gold electrode, then by obtained sample according to
In secondary immersion acetone and isopropanol, surface cleaning processing is carried out, drying is taken out after being cleaned with deionized water；
2) front on the silicon wafer of p-type doping does not grow insulating layer；
3) back side on the gallium arsenide film of n-type doping makes electrode, and material is 70nm titanium/gold electrode, the sample that then will be obtained
Product successively immerse in acetone and isopropanol, carry out surface cleaning processing, and drying is taken out after being cleaned with deionized water；
4) N-type gallium arsenide film is pressed in P-type wafer, contacting and being mutually shifted can be obtained the direct current based on dynamic PN junction
Generator generates electric signal.
The P-type silicon/N-type GaAs dynamic PN base junction dc generator, is that N-type gallium arsenide film is pressed in P-type wafer, connects
Touching and being mutually shifted can be obtained the dc generator based on dynamic PN junction.P-type silicon/N-type GaAs PN junction direct current hair
The I-V curve figure of motor forms a built in field as shown in Fig. 2, contacting with each other, and has rectification characteristic.With hand by N-type arsenic
It is mobile on P-type silicon surface to change gallium, electric signal can be obtained in electrode both ends, and the DC current size of generation is about 2 μ A, such as Fig. 3 institute
Show.The voltage swing of generation is about 0.7V, current density 2A/m2。
Embodiment 2:
1) p-type doping silicon wafer on the back side make electrode, material be 50nm titanium/gold electrode, then by obtained sample according to
In secondary immersion acetone and isopropanol, surface cleaning processing is carried out, drying is taken out after being cleaned with deionized water；
2) silica of one layer of 20nm of front growth on the silicon wafer of p-type doping；
3) back side on the gallium arsenide film of n-type doping makes electrode, and material is 100nm chrome gold electrode, the sample that then will be obtained
Product successively immerse in acetone and isopropanol, carry out surface cleaning processing, and drying is taken out after being cleaned with deionized water；
4) N-type gallium arsenide film is pressed in the P-type wafer that grown one layer of 20nm silica, contacting and being mutually shifted can obtain
To a dc generator based on dynamic PN junction, electric signal is generated.
The p-type silicon/silicon dioxide/N-type GaAs dynamic PN base junction dc generator, is pressed in growth for N-type gallium arsenide film
In the P-type wafer of one layer of 20nm silica, contacts and be mutually shifted i.e. exportable electric signal.P-type silicon/20nm titanium dioxide
The I-V curve figure of silicon/N-type GaAs PN junction dc generator forms a built in field as shown in figure 4, contacting with each other,
With more preferable rectification characteristic.Compared with P-type silicon/N-type GaAs knot, barrier height is improved, to improve output voltage.Use hand
N-type GaAs is mobile on P-type silicon surface, and electric signal can be obtained in electrode both ends, and generating voltage swing is about 2.5V, such as schemes
Shown in 5.The DC current size of generation is about 1.2 μ A, current density 1.2A/m2。
Embodiment 3:
1) p-type doping silicon wafer on the back side make electrode, material be 100nm titanium/gold electrode, then by obtained sample according to
In secondary immersion acetone and isopropanol, surface cleaning processing is carried out, drying is taken out after being cleaned with deionized water；
2) front on the silicon wafer of p-type doping does not grow insulating layer；
3) back side on the silicon wafer of n-type doping makes electrode, and material is 100nm silver electrode, then successively by obtained sample
It immerses in acetone and isopropanol, carries out surface cleaning processing, drying is taken out after being cleaned with deionized water；
4) N-type silicon chip is pressed in P-type wafer, contacting and being mutually shifted can be obtained the DC generation based on dynamic PN junction
Machine generates electric signal, and the DC current size of generation is about 20 μ A, as shown in Figure 6.The voltage swing of generation is about 0.1V, electricity
Current density is 107A/m2。
Embodiment 4:
1) electrode is made at the back side of the gallium nitride on piece of n-type doping, material is 70nm chrome gold electrode, the sample that then will be obtained
Product successively immerse in acetone and isopropanol, carry out surface cleaning processing, and drying is taken out after being cleaned with deionized water；
2) in the aluminium oxide of one layer of 50nm of front growth of the gallium nitride piece of n-type doping；
3) back side on the silicon wafer of p-type doping makes electrode, and material is 70nm silver electrode, then successively soaks obtained sample
Enter in acetone and isopropanol, carry out surface cleaning processing, drying is taken out after being cleaned with deionized water；
4) P-type wafer is pressed in n type gallium nitride on piece, contacting and being mutually shifted can be obtained the direct current based on dynamic PN junction
Generator generates electric signal.
Embodiment 5
1) back side on the silicon wafer of n-type doping makes electrode, and material is 70nm titanium/gold electrode, then by obtained sample according to
In secondary immersion acetone and isopropanol, surface cleaning processing is carried out, drying is taken out after being cleaned with deionized water；
2) in the silicon nitride of one layer of 10nm of front growth of the silicon wafer of n-type doping；
3) p-type doping silicon carbide plate on the back side make electrode, material be 60nm gold electrode, then by obtained sample according to
In secondary immersion acetone and isopropanol, surface cleaning processing is carried out, drying is taken out after being cleaned with deionized water；
4) p-type silicon carbide plate is pressed in N-type silicon chip, contacting and being mutually shifted can be obtained the direct current based on dynamic PN junction
Generator generates electric signal.
Embodiment 6
1) electrode is made at the back side of the gallium nitride on piece of n-type doping, material is 80nm titanium/gold electrode, the sample that then will be obtained
Product successively immerse in acetone and isopropanol, carry out surface cleaning processing, and drying is taken out after being cleaned with deionized water；
2) in the aluminium oxide of one layer of 100nm of front growth of the gallium nitride piece of n-type doping；
2) back side on the gallium arsenide film of p-type doping makes electrode, and material is 80nm titanium/gold electrode, the sample that then will be obtained
Product successively immerse in acetone and isopropanol, carry out surface cleaning processing, and drying is taken out after being cleaned with deionized water；
3) p-type gallium arsenide film is pressed in n type gallium nitride on piece, contacting and being mutually shifted can be obtained one based on dynamic PN junction
Dc generator generates electric signal.
It being found through lot of experiments, the thickness optimum range of insulating layer is 50-100nm in dc generator of the invention, when
Carrier can not pass through when thickness of insulating layer is blocked up, and the too thin then barrier height of insulating layer increases limited.Thickness of insulating layer appropriate
The output voltage of generator can be greatly improved, and limited reduction electric current exports.Si material output current density is high, voltage
It is relatively low；And the output current density of GaAs material is lower, but voltage is higher.
Claims (6)
1. a kind of dc generator based on dynamic PN junction, which is characterized in that the dc generator includes two parts, and a part is
The first semiconductor layer (1) is equipped with first electrode (2) at its back side, and front is equipped with a layer insulating (3)；Another part is
Two kinds of semiconductor layers (4) are equipped with second electrode (5) in one side, front and second of the semiconductor layer of the first semiconductor layer
Exposed side contact with each other and can opposite sliding, form dynamic PN junction dc generator, the first described semiconductor layer (1)
And the fermi level of second of semiconductor layer (4) material therefor is different.
2. a kind of dc generator based on dynamic PN junction according to claim 1, which is characterized in that the first described
Semiconductor layer (1) and second of semiconductor layer (4) are selected from silicon, GaAs, indium gallium arsenic, zinc oxide, germanium, silicon nitride, telluride
Cadmium, gallium nitride, indium phosphide.
3. a kind of dc generator based on dynamic PN junction according to claim 1, which is characterized in that the insulating layer
(3) selected from one of insulating materials such as silica, silicon nitride, aluminium oxide, boron nitride, thickness is no more than 500nm.
4. a kind of dc generator based on dynamic PN junction according to claim 1, which is characterized in that first electricity
Pole (2) and second electrode (5) are selected from one of gold, palladium, copper, silver, titanium, chromium, nickel, platinum and aluminium or several compound electrics
Pole, with a thickness of 1-500nm.
5. a kind of dc generator based on dynamic PN junction according to claim 1, which is characterized in that the dc generator
For any one of wind energy, tide energy, mechanical energy, ocean energy etc. to be converted to DC signal output.
6. preparing a kind of dc generator based on dynamic PN junction as described in any one in claim 1-5, which is characterized in that system
Standby process includes the following steps:
1) first electrode (2) are made at the first semiconductor layer (1) back side；
2) in the first semiconductor layer (1) front growth one layer insulating (3)；
3) first electrode (5) are made at second of semiconductor layer (4) back side；
4) second of semiconductor layer (4) front is pressed onto be formed on the first semiconductor layer (1) insulating layer (3) and is slidably connect
Touching, obtains the dc generator based on dynamic PN junction, and two kinds of semiconductor layers are relatively moved, that is, can produce DC signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811348577.6A CN109672367B (en) | 2018-11-13 | 2018-11-13 | Direct current generator based on dynamic PN junction and preparation method thereof |
| PCT/CN2019/110024 WO2020098417A1 (en) | 2018-11-13 | 2019-10-08 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| US17/319,110 US11522468B2 (en) | 2018-11-13 | 2021-05-13 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
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| CN201811348577.6A CN109672367B (en) | 2018-11-13 | 2018-11-13 | Direct current generator based on dynamic PN junction and preparation method thereof |
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| WO2020098417A1 (en) * | 2018-11-13 | 2020-05-22 | 浙江大学 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| CN111431433A (en) * | 2020-02-19 | 2020-07-17 | 浙江大学 | Direct-current generator based on NN/PP homojunction of dynamic semiconductor and preparation method thereof |
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| CN110905723A (en) * | 2019-11-18 | 2020-03-24 | 浙江大学 | Novel wind driven generator with fractal interface structure |
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| CN111431433B (en) * | 2020-02-19 | 2022-08-05 | 浙江大学 | Direct current generator based on dynamic semiconductor homojunction and preparation method thereof |
| CN111431433A (en) * | 2020-02-19 | 2020-07-17 | 浙江大学 | Direct-current generator based on NN/PP homojunction of dynamic semiconductor and preparation method thereof |
| CN111786595A (en) * | 2020-07-09 | 2020-10-16 | 浙江大学 | Novel direct current generator based on graphene/polar liquid/semiconductor dynamic diode and preparation method thereof |
| CN111786595B (en) * | 2020-07-09 | 2022-08-02 | 浙江大学 | Novel direct current generator based on graphene/polar liquid/semiconductor dynamic diode and preparation method thereof |
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