CN109921687B - Layered semiconductor-semiconductor dynamic PN junction direct current generator and preparation method thereof - Google Patents
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Abstract
The invention discloses a layered semiconductor-semiconductor dynamic PN junction direct current generator and a preparation method thereof. The direct current generator mainly comprises a layered semiconductor and another semiconductor, wherein a PN junction is formed on the contact surface of the two semiconductor materials due to different Fermi levels of the two semiconductor materials, and the dynamic PN characteristic is generated between the two semiconductor materials during sliding, namely, during sliding, the balance of PN junction diffusion current and drift current in the junction area of the direct current generator is broken, drift charge is rebounded under the action of an internal electric field, and continuous direct current output is generated; the generator can convert mechanical energy into high-density electric energy to be output and provided for various electronic devices and products. Compared with the traditional electromagnetic induction generator and the nanometer generator, the direct current generator has extremely high current density and high generating voltage, can be applied to various portable wearable electronic devices, can be repeatedly utilized, has simple structure and low cost, and is easy for industrial application.
Description
Technical Field
The invention relates to a layered semiconductor-semiconductor dynamic PN junction direct current generator and a preparation method thereof, belonging to the technical field of acquisition of novel green renewable energy sources.
Background
In the modern times, intelligent science and technology are rapidly developed, and electronic products are changing day by day. People enjoy the high efficiency and convenience brought by modern society more and more, and are also beset by environmental pollution and energy crisis. After the twentieth century, human exploration for renewable clean energy has never been relaxed. Besides the traditional green energy power generation such as solar power generation, wind power generation, tidal power generation and the like which are familiar to the public, the nano-generator becomes a new star which is going to be advanced in research field and application level by virtue of the advantages such as novelty, portability and the like. In the existing invention and application, the nanometer generator can convert the green energy in nature such as wind energy, mechanical energy, tidal energy and the like into electric energy to be output, thereby replacing the traditional lithium battery to supply power for electronic devices. The operation of the nano generator is not limited by environmental factors, and the nano generator can effectively reduce environmental pollution and relieve energy crisis under large-area popularization in the future.
Piezoelectric generators have attracted attention since 2006, and friction generators have rapidly developed since 2012. However, these two types of generators are still difficult to be popularized in a large scale, and are limited by materials, structures, working principles and the like except that the current and power are low and the output is an alternating current signal. The layered semiconductor-semiconductor dynamic PN junction direct current generator disclosed by the invention utilizes the mutual contact movement between two semiconductor materials with different Fermi energy levels to generate direct current output, is not influenced by environmental factors, and reduces the limitation on materials, structures and working principles. The two semiconductors form a PN junction on the contact surface, the junction has a strong built-in electric field, and an electric signal with high power density can be output when the junction slides. The semiconductor is provided with an insulating layer to increase the voltage. In addition, the laminated semiconductor has small resistance when sliding, and can not generate scratches on another semiconductor material, so that the semiconductor material can be recycled, and continuous direct current output is generated. The whole device is simple in structure, mature in preparation process and stable in work of the generator.
Disclosure of Invention
The invention aims to provide a layered semiconductor-semiconductor dynamic PN junction direct current generator and a preparation method thereof.
The layered semiconductor-semiconductor dynamic PN junction direct current generator consists of two parts, wherein one part is a first semiconductor layer, a first electrode is arranged on the back surface of the first semiconductor layer, and an insulating layer is arranged on the front surface of the first semiconductor layer; the other part is a second layered semiconductor layer with different Fermi level from the first semiconductor layer, a second electrode is arranged on one side of the second layered semiconductor layer, and the front surface of the first semiconductor layer and the non-electrode side of the second layered semiconductor layer are in contact with each other and slide relatively to each other, so that the dynamic PN junction direct current generator is formed.
In the above technical solution, the first semiconductor layer is one of semiconductor materials such as silicon (Si), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), zinc oxide (ZnO), germanium (Ge), silicon nitride (Si3N4), cadmium telluride (CdTe), gallium nitride (GaN), and indium phosphide (InP), and fermi levels of the two materials are different.
The second layered semiconductor layer is molybdenum disulfide (MoS)2) Black phosphorus (P), tungsten diselenide (WSe)2) Molybdenum ditelluride (MoTe)2) Graphite flake (Graphite), molybdenum diselenide (MoSe)2) Tungsten disulfide (WS)2) And one of the layered semiconductor materials.
The insulating layer is silicon dioxide (SiO)2) Silicon nitride (Si)3N4) Alumina (Al)2O3) Boron Nitride (BN), aluminum nitride (AlN), or the like, and the thickness thereof is not more than 500 nm.
The first electrode and the second electrode are respectively selected from one or more of gold (Au), palladium (Pd), copper (Cu), silver (Ag), titanium (Ti), chromium (Cr), nickel (Ni), platinum (Pt) and aluminum (Al), and the thickness of the first electrode and the second electrode is 1-500 nm.
The layered semiconductor-semiconductor dynamic PN junction direct current generator can convert one of wind energy, tidal energy, mechanical energy, ocean energy and the like into an electric signal.
The electric signal generated by the layered semiconductor-semiconductor dynamic PN junction direct current generator is a direct current signal, and the current density is extremely high and is several orders of magnitude higher than that of other nanometer generators.
The method for preparing the layered semiconductor-semiconductor dynamic PN junction direct current generator is characterized by comprising the following steps of:
1) manufacturing a first electrode on the back of the first semiconductor layer;
2) growing an insulating layer on the front surface of the semiconductor layer with the manufactured first electrode;
3) manufacturing a second electrode on the back of the second layered semiconductor layer;
4) and pressing the front surface of the second laminated semiconductor layer on the insulating layer of the first semiconductor layer to contact and slide to obtain the laminated semiconductor-semiconductor dynamic PN junction direct current generator, wherein a direct current signal can be generated in the sliding process.
Compared with the prior art, the invention has the beneficial effects that:
the traditional nano generator needs to use piezoelectric semiconductor materials, and needs to be additionally provided with a rectifying circuit to convert an alternating current signal into a direct current signal; the layered semiconductor-semiconductor dynamic PN junction direct current generator does not need to use piezoelectric semiconductor materials, and can directly output direct current signals to supply power to an external circuit. The laminar semiconductor has small resistance and can not generate scratches when sliding, so that the semiconductor material can be recycled to generate continuous direct current output. The layered semiconductor-semiconductor dynamic PN junction direct current generator has the advantages of simple structure, mature manufacturing process and stable device work, and can continuously output direct current signals with high current density and high voltage.
Drawings
FIG. 1 is a schematic structural diagram of a layered semiconductor-semiconductor dynamic PN junction DC generator;
FIG. 2 is based on MoS2The energy band diagram of the DC generator of the/P type silicon dynamic PN junction;
FIG. 3 is based on MoS2The current and voltage output of the DC generator of the/P type silicon dynamic PN junction is changed along with time;
FIG. 4 is based on MoS2The current voltage output of the DC generator of the P-type silicon dynamic PN junction is along with the change graph of the pressure speed;
FIG. 5 is based on MoS2The current and voltage output of the DC generator with the/5 nm aluminum nitride/P type silicon dynamic PN junction is shown as a time change graph.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Referring to fig. 1, the layered semiconductor-semiconductor dynamic PN junction dc generator of the present invention comprises a first electrode 2 formed on the back surface of a first semiconductor material layer 1, and an insulating layer 3 formed on the front surface; manufacturing a second electrode 5 on the back of the layered semiconductor material layer 4 with different second Fermi levels; and then pressing one surface of the insulating layer of the first semiconductor material layer 1 onto the front surface of the second semiconductor material layer 4 to form movable mutual contact, so that the layered semiconductor-semiconductor dynamic PN junction direct current generator is obtained, and the two semiconductor layers move mutually to obtain direct current output. The layered semiconductor-semiconductor dynamic PN junction direct current generator forms a PN junction on the contact surface of the layered semiconductor-semiconductor dynamic PN junction direct current generator and the contact surface of the layered semiconductor-semiconductor dynamic PN junction direct current generator, and the junction area has a strong built-in electric field; forming a PN junction on the contact surface of the two, wherein the junction has a strong built-in electric field; when the layered semiconductor slides on another semiconductor, the balance between the PN junction diffusion current and the drift current in the junction region is broken, and the drift charge is rebounded under the action of an internal electric field to generate continuous direct current output. The layered semiconductor-semiconductor dynamic PN junction direct current generator can convert mechanical energy into high-density electric energy to be output and provide the high-density electric energy for various electronic devices and products. Compared with the traditional electromagnetic induction generator and the nanometer generator, the generator disclosed by the invention has extremely high current density, and the insulating layer can improve the generation voltage. When the layered semiconductor slides, the resistance is small, and no scratch is generated, so that the semiconductor material can be recycled, and continuous direct current output is generated. The required process flow and the device have simple structure and low cost, and can realize industrial application in the future.
Example 1:
1) manufacturing a back electrode on a P-type doped silicon wafer, wherein the material of the back electrode is a 50nm silver electrode, putting the obtained sample into an acetone solution for cleaning, pouring out cleaning liquid, removing residual acetone by using an isopropanol solution, washing by using deionized water, taking out and drying by blowing;
2) no insulating layer is grown on the front surface of the P-type doped silicon wafer;
3) manufacturing a back electrode on the molybdenum disulfide, wherein the material is a 50nm silver electrode;
4) pressing molybdenum disulfide on a P-type silicon chip, contacting and moving the molybdenum disulfide with the P-type silicon chip mutually to obtain a layered semiconductor-semiconductor dynamic PN junction direct current generator, and generating an electric signal.
The molybdenum disulfide/P type silicon dynamic PN junction direct current generator is a layered semiconductor-semiconductor dynamic PN junction direct current generator which is obtained by pressing molybdenum disulfide on a P type silicon chip, contacting and moving the molybdenum disulfide and the P type silicon chip mutually. The energy band diagram of the molybdenum disulfide/P type silicon PN junction direct current generator is shown in figure 2, and the current and voltage output change with time is shown in figure 3. It can be seen that the semiconductor material can be recycled, producing a stable continuous dc output. In addition, we change the sliding speed and the pressure respectively, and find that the output current and voltage are changed accordingly, as shown in fig. 4. Within a certain range, the larger the sliding speed, the larger the current and voltage. Before reaching the critical value, the larger the pressure is, the larger the current and the voltage are; after reaching a certain critical value, the current and voltage decrease with the increase of the pressure. The voltage can reach 1.0V at most, and the current can reach 9 muA at most.
Example 2:
1) manufacturing a back electrode on a P-type doped silicon wafer, wherein the material of the back electrode is a 50nm titanium/gold electrode, putting the obtained sample into an acetone solution for cleaning, pouring out cleaning liquid, removing residual acetone by using an isopropanol solution, washing by using deionized water, taking out and drying by blowing;
2) growing a layer of 5nm AlN on the front surface of the P-type doped silicon wafer to serve as an insulating layer;
3) manufacturing a back electrode on the molybdenum disulfide, wherein the material is a 50nm titanium/gold electrode;
4) pressing molybdenum disulfide on a P-type silicon chip, contacting and moving the molybdenum disulfide with the P-type silicon chip mutually to obtain a layered semiconductor-semiconductor dynamic PN junction direct current generator, and generating an electric signal.
According to the molybdenum disulfide/AlN/P type silicon dynamic PN junction direct current generator, molybdenum disulfide is pressed on a P type silicon chip on which a layer of 5nm aluminum nitride grows, and electric signals can be output by contact and mutual movement. The graph of the voltage and current output changing with time is shown in fig. 5, and it can be found that after the insulating layer is added, the voltage is obviously greatly increased, and the maximum voltage can reach 5V.
Example 3:
1) manufacturing a back electrode on a P-type doped gallium arsenide chip, wherein the material of the back electrode is an 80nm titanium/gold electrode, putting the obtained sample into an acetone solution for cleaning, pouring out cleaning liquid, removing residual acetone by using an isopropanol solution, washing by using deionized water, taking out and drying by blowing;
2) growing a layer of 20nm silicon dioxide on the front surface of the P-type doped gallium arsenide as an insulating layer;
3) manufacturing a back electrode on the black phosphorus, wherein the material is an 80nm titanium/gold electrode;
4) the black phosphorus is pressed on the P-type doped gallium arsenide, and the black phosphorus is contacted and mutually moved to obtain a layered semiconductor-semiconductor dynamic PN junction direct current generator to generate an electric signal.
Example 4:
1) manufacturing a back electrode on a P-type doped gallium nitride sheet, wherein the material of the back electrode is an 80nm silver electrode, putting the obtained sample into an acetone solution for cleaning, pouring out cleaning liquid, removing residual acetone by using an isopropanol solution, washing by using deionized water, taking out and drying by blowing;
2) growing 50nm of aluminum oxide on the front surface of the P-type doped gallium nitride to serve as an insulating layer;
3) manufacturing a back electrode on the tungsten disulfide, wherein the material is a silver electrode with the thickness of 80 nm;
4) pressing tungsten disulfide on the P-type doped gallium nitride, contacting and moving mutually to obtain a layered semiconductor-semiconductor dynamic PN junction direct current generator and generate an electric signal.
Example 5
1) Manufacturing a back electrode on an N-type doped zinc oxide sheet, wherein the material of the back electrode is an 80nm silver electrode, putting the obtained sample into an acetone solution for cleaning, pouring out cleaning liquid, removing residual acetone by using an isopropanol solution, washing by using deionized water, taking out and drying by blowing;
2) growing 100nm of aluminum oxide on the front surface of the N-type zinc oxide to serve as an insulating layer;
3) manufacturing a back electrode on the flake graphite, wherein the material is an 80nm silver electrode;
4) the flake graphite is pressed on the N-type zinc oxide, contacted and moved mutually to obtain a layered semiconductor-semiconductor dynamic PN junction direct current generator, and an electric signal is generated.
Through a large number of experimental researches, the optimal range of the thickness of the insulating layer in the direct current generator is 5-100nm, when the thickness of the insulating layer is too thick, a carrier cannot pass through, and when the thickness of the insulating layer is too thin, the increase of the potential barrier height is limited. Proper insulation thickness can greatly increase the output voltage of the generator and reduce the current output to a limited extent.
Claims (6)
1. A layered semiconductor-semiconductor dynamic PN junction direct current generator is characterized in that the direct current generator is composed of two parts, wherein one part is a first semiconductor layer (1), a first electrode (2) is arranged on the back surface of the first semiconductor layer, and an insulating layer (3) is arranged on the front surface of the first semiconductor layer; the other part is a second layered semiconductor layer (4) with different Fermi level from the first semiconductor layer, a second electrode (5) is arranged on one side of the second layered semiconductor layer, and the front surface of the first semiconductor layer and the non-electrode side of the second layered semiconductor layer are contacted with each other and slide relatively to form a dynamic PN junction direct current generator.
2. A layered semiconductor-semiconductor dynamic PN junction DC generator as claimed in claim 1, characterized in that said first semiconductor layer (1) is selected from the group consisting of silicon (Si), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), zinc oxide (ZnO), germanium (Ge), silicon nitride (Si-Si)3N4) Cadmium telluride (CdTe), gallium nitride (GaN), indium phosphide (InP).
3. A laminated semiconductor-semiconductor dynamic PN junction dc generator as claimed in claim 1, wherein said second laminated semiconductor layer (4) is selected from molybdenum disulfide (MoS)2) Black phosphorus (P), tungsten diselenide (WSe)2) Molybdenum ditelluride (MoTe)2) Graphite flake (Graphite), molybdenum diselenide (MoSe)2) Tungsten disulfide (WS)2) A two-dimensional layered semiconductor material.
4. The layered semiconductor-semiconductor dynamic PN junction dc generator as claimed in claim 1, wherein the insulating layer (3) is selected from silicon dioxide (SiO)2) Silicon nitride (Si)3N4) Alumina (Al)2O3) Boron Nitride (BN), aluminum nitride (AlN) insulating material, the thickness is not more than 500 nm.
5. The layered semiconductor-semiconductor dynamic PN junction direct current generator according to claim 1, characterized in that the first electrode (2) and the second electrode (5) are both selected from one or more of gold (Au), palladium (Pd), copper (Cu), silver (Ag), titanium (Ti), chromium (Cr), nickel (Ni), platinum (Pt) and aluminum (Al), and the thickness is 1-500 nm.
6. Preparation of a layered semiconductor-semiconductor dynamic PN junction dc generator according to any of claims 1-5, characterized in that the preparation process comprises the following steps:
1) manufacturing a first electrode (2) on the back of the first semiconductor layer (1);
2) growing an insulating layer (3) on the front surface of the first semiconductor layer (1) with the first electrode;
3) manufacturing a second electrode (5) on the back surface of the second layered semiconductor layer (4);
4) and pressing the front surface of the second laminated semiconductor layer (4) on the insulating layer (3) of the first semiconductor layer (1) to contact and slide to obtain the laminated semiconductor-semiconductor dynamic PN junction direct current generator, wherein a direct current signal can be generated in the sliding process.
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| CN201910002417.4A CN109921687B (en) | 2019-01-02 | 2019-01-02 | Layered semiconductor-semiconductor dynamic PN junction direct current generator and preparation method thereof |
| PCT/CN2019/110024 WO2020098417A1 (en) | 2018-11-13 | 2019-10-08 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| US17/319,110 US11522468B2 (en) | 2018-11-13 | 2021-05-13 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
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| WO2020098417A1 (en) * | 2018-11-13 | 2020-05-22 | 浙江大学 | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same |
| CN111029337B (en) * | 2019-11-18 | 2021-12-21 | 浙江大学 | Multi-energy collection system based on semiconductor heterogeneous integration |
| CN110905723A (en) * | 2019-11-18 | 2020-03-24 | 浙江大学 | Novel wind driven generator with fractal interface structure |
| CN110932590B (en) * | 2019-11-18 | 2021-03-05 | 浙江大学 | Flexible direct current generator based on organic semiconductor film |
| CN111431433B (en) * | 2020-02-19 | 2022-08-05 | 浙江大学 | Direct current generator based on dynamic semiconductor homojunction and preparation method thereof |
| CN111786595B (en) * | 2020-07-09 | 2022-08-02 | 浙江大学 | Novel direct current generator based on graphene/polar liquid/semiconductor dynamic diode and preparation method thereof |
| CN112165275B (en) * | 2020-08-26 | 2022-02-11 | 浙江大学 | Dynamic diode generator capable of working at extremely low temperature and preparation method thereof |
| CN113783471B (en) * | 2021-07-16 | 2023-12-08 | 浙江大学 | Thin film dynamic semiconductor-polymer semiconductor heterojunction direct current generator and preparation method thereof |
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| CN105679861B (en) * | 2016-01-20 | 2018-05-04 | 浙江大学 | A kind of two-dimensional material/heterogeneous semiconductor joint solar cell of surface plasma enhancing and preparation method thereof |
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