CN109672071A - A kind of production method of spin terahertz transmitter and THz wave - Google Patents
A kind of production method of spin terahertz transmitter and THz wave Download PDFInfo
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- CN109672071A CN109672071A CN201910004115.0A CN201910004115A CN109672071A CN 109672071 A CN109672071 A CN 109672071A CN 201910004115 A CN201910004115 A CN 201910004115A CN 109672071 A CN109672071 A CN 109672071A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The embodiment of the present invention provides the production method of a kind of spin terahertz transmitter and THz wave, including at least femto-second laser, topological structure film and magnetic field generator, the pump light of the femto-second laser output passes through the topological structure film, generate the THz wave that the direction in magnetic field is generated based on the magnetic field generator, the topological structure film includes topological insulator layer, ferromagnetic layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.Emitter structures provided in an embodiment of the present invention are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at low cost.
Description
Technical field
The present embodiments relate to terahertz pulse generation technology field more particularly to a kind of spin terahertz transmitter and
The production method of THz wave.
Background technique
Terahertz (Terahertz, THz) wave is between far infrared and microwave, and covering frequence range is from 0.1-10THz.
THz wave not only has wide practical use in fields such as medical imaging, safety inspection, product testing, space communications, and
Terahertz pulse is the resonance probe of many low energy member excitations in condensed state matter.THz wave has many peculiar properties,
For example transmittance, safety, very strong spectral resolving power etc., these properties assign THz wave broad application prospect, packet
Include Terahertz radar and communication, spectrum and imaging, nondestructive inspection, safety detection etc..
However, Terahertz, which is applied, still has by force the terahertz emission source of efficient, high power, low cost, working and room temperature
Strong demand.The currently used THz source based on photonics method specifically include that zinc telluridse (ZnTe) optical rectification effect and
GaAs (LT-GaAs) photoconductive antenna of low-temperature epitaxy generates terahertz pulse.Both methods has maturity height, generates
The advantage that the electric field strength of THz pulse is high, stability is good, but the preparation of both materials is complicated, and higher cost limits Terahertz
The extensive use of device.Therefore it is improved on the basis of existing source, or above-mentioned requirements is met based on new physical principle development
Terahertz emission source is of great significance.
Spintronics refers to control and manipulation electron spin, studies its transport property and constructs a Men Xue of new device
Section.Certain physical phenomenons of spintronics, such as crossover magnon, antiferromagnetic resonance and ultrafast Spin dynamics, it is special
Frequency is levied just at Terahertz frequency range；This combines Terahertz with spintronics, forms Terahertz spinning electron
Learn this emerging cross discipline, be based on spintronics phenomenon and principle, researcher find and establish it is several it is novel too
Hertz wave production method, mainly has: a) spin injection generates THz wave；B) THz wave based on antiferromagnetic resonance generates；
C) THz wave based on ultrafast Spin dynamics generates.
Currently, mainly irradiating ferromagnetic/nonmagnetic metal heterojunction structure using femto-second laser pulse generates THz wave, ferromagnetic layer
The energy band that light energy makes electronics d band under Fermi surface transit to Fermi surface or more is absorbed, nonequilibrium electronics distribution is generated；Due to
Spin up with the different sample of downward density of electronic states, as a result generate from ferromagnetic layer to adjacent non-ferromagnetic layers (tungsten or platinum)
Instantaneous spin polarization transmission, i.e., instantaneous spin current；Due to inverse logic gates, spins up and be dispersed into downward electronics
Opposite direction, the instantaneous spin current for injecting non-magnetosphere is transformed into instantaneous electric charge stream, to give off broadband terahertz pulse.So
And although many studies have shown that, ferromagnetic/nonmagnetic metal heterojunction structure bilayer can generate Terahertz spoke under Gold Films Irradiated by Femtosecond Laser
It penetrates, however since the spin Hall angle of tungsten or platinum is smaller, enough instantaneous charge stream, the radiation of final Terahertz can not be generated
Effect is not significant.
Summary of the invention
For the technical problems in the prior art, the embodiment of the present invention provides a kind of spin terahertz transmitter and too
The production method of Hertz wave.
In a first aspect, the embodiment of the present invention provides a kind of spin terahertz transmitter, femto-second laser, topology are included at least
Structural membrane and magnetic field generator, by the topological structure film, generation is based on the pump light of the femto-second laser output
The magnetic field generator generates the THz wave in the direction in magnetic field, and the topological structure film includes topological insulator layer, ferromagnetic
Layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
Second aspect, the embodiment of the present invention provide a kind of production method of THz wave, using the transmitter of first aspect
To generate THz wave.
The production method of spin terahertz transmitter provided in an embodiment of the present invention and THz wave, swashs including at least femtosecond
The pump light of light device, topological structure film and magnetic field generator, the femto-second laser output passes through the topological structure film,
The THz wave that the direction in magnetic field is generated based on the magnetic field generator is generated, the topological structure film includes topological insulator
Layer, ferromagnetic layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute different
Matter structure.Emitter structures provided in an embodiment of the present invention are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at
This is low.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the side view of the topological structure film of spin terahertz transmitter provided in an embodiment of the present invention；
Fig. 2 is the top view of the topological structure film provided in an embodiment of the present invention in in-plane magnetic field；
Fig. 3 is the curve that spin terahertz transmitter magnet provided in an embodiment of the present invention makes ferromagnetic layer magnetization change
Figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of spin terahertz transmitter, includes at least femto-second laser, topological structure film
And magnetic field generator, the pump light of the femto-second laser output generate by the topological structure film and are based on the magnetic field
Generator generates the THz wave in the direction in magnetic field, and the topological structure film includes topological insulator layer, ferromagnetic layer and non-ferric
Magnetosphere, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
Specifically, the pumping laser of the femto-second laser output penetrates the topological structure film, generates and is based on magnetic field
The THz wave of direction polarization.The pulse width of the pumping laser of the femto-second laser output is less than 1ps.
Topological structure film is placed in a constant in-plane magnetic field H so that magnetic field is in-plane field as an example by the embodiment of the present invention
Interior, the topological structure film generates THz wave under magnetic fields, specifically, in such a way that ultrafast spin emits, base
In unusual logic gates, in the way of external magnetisation, the Terahertz of default spectrum width, default radiation field intensity is generated
Impulse radiation.
As shown in Figure 1, similarly assuming that magnetic field is constant in-plane field, the direction of magnetization M of ferromagnetic layer is directed toward magnetic direction.Fly
The pumping laser of second laser output is incident on a face of topological structure film, can be generated in ferromagnetic layer it is contrary, greatly
Small identical spin current Js injection topological insulator layer and nonmagnetic layer can be in materials at two layers due to inverse logic gates
The identical electric charge stream Jc of size is generated, and since the spin Hall angle of two kinds of materials is on the contrary, the electric charge stream side that two kinds of materials generate
To identical, and then it is identical to generate direction, the THz wave mutually enhanced.
New high-efficiency topology protection spin terahertz transmitter provided in an embodiment of the present invention, terahertz generation are tied in topology
Structure film, that is, topological insulator layer/three layers of ferromagnetic layer/non-ferromagnetic layers nano thin-film, topological insulator property stablize easily preparation, no
It is limited by crystalline size in traditional terahertz sources method, and since it by the surface state of topology protection has this material
There is biggish positive spin Hall angle, when being used in combination with the non-ferromagnetic layers of negative spin Hall angle, can produce more ferromagnetic than common
The stronger THz wave of layer/non-ferromagnetic layers double-layer structure.Optimized by the selection of material and sample structure, trilamellar membrane structure
Terahertz energy conversion efficiency be even better than based on laser oscillator 0.25mm GaP (110), the ZnTe (110) of 1mm and
Terahertz emission in photoconductive antenna.
New high-efficiency topology protection spin THz wave transmitter provided in an embodiment of the present invention is based on unusual spin Hall
Effect obtains ultrafast spinning current by an additional low-intensity magnetic field in topological structure film, to generate terahertz pulse spoke
It penetrates.Topological structure film can be prepared using mature molecular beam epitaxy system.Without preparing Large-aperture photoconductive antennas
Complicated micro-nano technology technology, overcome traditional terahertz pulse radiation transmitter to material requirements height, it is complicated
Disadvantage.
Relative to ferromagnetic layer/terahertz transmitter of the non-ferromagnetic layers double layer heterojunction structure as main material emerging at present
Part is added topological insulator layer as complementation, using the topological protection feature of topological insulator surface state, enhances the strong of Terahertz
Degree and emission effciency.
Due to reducing the complexity of transmitter to reduce costs without applying bias voltage.Moreover, using
Ferromagnetic nano thin-film growing technology it is simple, can large area preparation, compared with traditional nonlinear crystal and high lead antenna, greatly
Ground reduces the cost of transmitter.
Since interior terahertz sources mechanism does not depend in topological insulator layer/ferromagnetic layer/non-ferromagnetic layers three-decker film
In phonon, the pulse for making the spectrum width of the THz wave generated be limited only by the pumping laser of femto-second laser generation is wide
Degree, and it is unrelated with the factors such as the phonon vibration frequency of material itself and absorption, therefore can realize that ultra wide band terahertz pulse radiates
Transmitting.
Spin terahertz transmitter provided in an embodiment of the present invention, include at least femto-second laser, topological structure film and
Magnetic field generator, the pump light of the femto-second laser output are generated and are sent out based on the magnetic field by the topological structure film
Raw device generates the THz wave in the direction in magnetic field, and the topological structure film includes topological insulator layer, ferromagnetic layer and non-ferromagnetic
Layer, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.The present invention is implemented
The emitter structures that example provides are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at low cost.
Optionally, the topological insulator layer and the ferromagnetic layer constitute double layer heterojunction structure.
On the basis of the above embodiments, due to the special band structure of topological insulator, due in topological insulator
The topology of Electronic Transport Processes to its special surface state is protected, so the material of topological insulating layer has very big spin(-)orbit coupling
When closing characteristic, single layer topology insulating materials and ferrimagnet composition double layer heterojunction structure film, THz wave can also be carried out
Transmitting.
Optionally, the topological insulator layer constitutes three layers of hetero-junctions with the ferromagnetic layer, the non-ferromagnetic layers and makes
Obtaining the THz wave mutually enhances.
On the basis of the above embodiments, since topological insulator has positive spin Hall angle, with ferrimagnet, from
When the nonmagnetic layer material that rotation Hall angle is negative constitutes three layers of hetero-junctions, the THz wave of transmitting can mutually enhance.
Specifically, by femto-second laser export pulse pump laser light topological insulator layer/ferromagnetic layer/it is non-ferromagnetic
Layer three-decker film generates spin current, and spin current has the nonferromagnetic material of opposite spin Hall angle by upper and lower two,
The identical electric charge stream in direction is generated, and then generates the THz wave mutually enhanced.
Specifically, the topological insulator layer is VI group element compound of V-, specially Bi2Se3, Bi2Te3, BixSb1-x,
Sb2Te3, (BixSb1-x)2Te3And its alloy.
Specifically, the ferromagnetic layer is transition metal or corresponding ferromagnetic alloy, for example, ferromagnetic layer material can be ferro-cobalt
Boron alloy (CoFeB).
Specifically, the non-ferromagnetic layers are strong Quantum geometrical phase material, and the spin Hall with the topological insulator
Angle is on the contrary, for example, non-ferromagnetic layers can be selected with big negative spin Hall angle heavy metal material, such as tungsten (W) or tantalum (Ta).
In embodiments of the present invention, the concrete shape of topological structure film is not especially limited, can is round, oval
Shape, square, rectangle or other irregular shapes, as long as the hot spot of pumping laser can be allow to be radiated on film completely i.e.
It can.
It is only illustrated by taking round three-decker film as an example in the embodiment of the present invention.Since stationary magnetic field is along film
Uniform magnetic field in surface, the polarization state of the terahertz pulse radiation of generation are linear polarization, and polarization direction vertical magnetic field direction,
As shown in Figure 2.
Optionally, the femto-second laser is specially that femtosecond laser oscillator, femtosecond laser amplifier or optical fiber femtosecond swash
Light device.
Specifically, the magnetic field generator is for generating the different size of magnetic field of different directions, to change the terahertz generated
The hereby size and polarized state of wave.
On the basis of the above embodiments, in the plane locating for the topological structure film, it is parallel or vertical that there are directions
Directly in the magnetic field of film, the size and polarized state for generating THz wave can change by the direction and size that change magnetic field.
In the changes of magnetic field of topological structure thin membrane regions, the variation of the ferromagnetic layer intensity of magnetization, i.e., with the variation in magnetic field,
The magnetized direction of ferromagnetic layer can change with size, and then influence the spin current of injection topological insulator layer and non-ferromagnetic layers, most
The intensity and polarization state of transmitting THz wave are influenced eventually, as shown in Figure 3.
The embodiment of the present invention also provides a kind of production method of THz wave, is generated too using above-mentioned any transmitter
Hertz wave.
The production method of spin terahertz transmitter provided in an embodiment of the present invention and THz wave, swashs including at least femtosecond
The pump light of light device, topological structure film and magnetic field generator, the femto-second laser output passes through the topological structure film,
The THz wave that the direction in magnetic field is generated based on the magnetic field generator is generated, the topological structure film includes topological insulator
Layer, ferromagnetic layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute different
Matter structure.Emitter structures provided in an embodiment of the present invention are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at
This is low.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Through the above description of the embodiments, those skilled in the art can be understood that each embodiment can
It realizes by means of software and necessary general hardware platform, naturally it is also possible to pass through hardware.Based on this understanding, on
Stating technical solution, substantially the part that contributes to existing technology can be embodied in the form of software products in other words, should
Computer software product may be stored in a computer readable storage medium, such as ROM/RAM, magnetic disk, CD, including several fingers
It enables and using so that a computer equipment (can be personal computer, server or the network equipment etc.) executes each implementation
Method described in certain parts of example or embodiment.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (9)
1. a kind of spin terahertz transmitter, which is characterized in that include at least femto-second laser, topological structure film and magnetic field hair
Raw device, the pump light of the femto-second laser output are generated and are produced based on the magnetic field generator by the topological structure film
The THz wave in the direction of magnetisation field, the topological structure film include topological insulator layer, ferromagnetic layer and non-ferromagnetic layers, and
The topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
2. transmitter according to claim 1, which is characterized in that the topological insulator layer and the ferromagnetic layer are constituted
Double layer heterojunction structure.
3. transmitter according to claim 1, which is characterized in that the topological insulator layer and the ferromagnetic layer, institute
Non-ferromagnetic layers are stated to constitute three layers of hetero-junctions and the THz wave is mutually enhanced.
4. transmitter according to claim 1, which is characterized in that the topological insulator layer is VI race's element compounds of V-
Object, specially Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3, (BixSb1-x)2Te3And its alloy.
5. transmitter according to claim 1, which is characterized in that the ferromagnetic layer is that transition metal or corresponding ferromagnetism are closed
Gold.
6. transmitter according to claim 1, which is characterized in that the non-ferromagnetic layers are strong Quantum geometrical phase material,
And it is opposite with the spin Hall angle of the topological insulator.
7. transmitter according to claim 1, which is characterized in that the femto-second laser is specially femtosecond laser oscillation
Device, femtosecond laser amplifier or optical fiber femtosecond laser.
8. transmitter according to claim 1, which is characterized in that the magnetic field generator is for generating different directions difference
The magnetic field of size, to change the size and polarized state of the THz wave generated.
9. a kind of production method of THz wave, which is characterized in that generated too using such as claim 1-8 any transmitter
Hertz wave.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535003A (en) * | 2019-08-21 | 2019-12-03 | 北京航空航天大学 | A kind of spin terahertz sources device and method |
| CN110658155A (en) * | 2019-11-06 | 2020-01-07 | 中国电子科技集团公司第四十一研究所 | Terahertz spectrograph based on electron spin emission and spectral analysis system |
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN110687319A (en) * | 2019-10-24 | 2020-01-14 | 赫智科技(苏州)有限公司 | Ultrahigh-resolution atomic force microscope scanning probe and measuring method thereof |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
| CN112563864A (en) * | 2020-12-15 | 2021-03-26 | 上海理工大学 | Terahertz transmitter based on spin filtering and preparation method thereof |
| CN117665411A (en) * | 2024-01-31 | 2024-03-08 | 中国电子科技集团公司第十五研究所 | Magnetic field enhanced low-orbit satellite 6G signal detector |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535003A (en) * | 2019-08-21 | 2019-12-03 | 北京航空航天大学 | A kind of spin terahertz sources device and method |
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN110687070B (en) * | 2019-10-17 | 2022-03-01 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN110687319A (en) * | 2019-10-24 | 2020-01-14 | 赫智科技(苏州)有限公司 | Ultrahigh-resolution atomic force microscope scanning probe and measuring method thereof |
| CN110687319B (en) * | 2019-10-24 | 2022-11-01 | 赫智科技(苏州)有限公司 | Ultrahigh-resolution atomic force microscope scanning probe and measuring method thereof |
| CN110658155A (en) * | 2019-11-06 | 2020-01-07 | 中国电子科技集团公司第四十一研究所 | Terahertz spectrograph based on electron spin emission and spectral analysis system |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112103756B (en) * | 2020-10-12 | 2023-04-07 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112563864A (en) * | 2020-12-15 | 2021-03-26 | 上海理工大学 | Terahertz transmitter based on spin filtering and preparation method thereof |
| CN117665411A (en) * | 2024-01-31 | 2024-03-08 | 中国电子科技集团公司第十五研究所 | Magnetic field enhanced low-orbit satellite 6G signal detector |
| CN117665411B (en) * | 2024-01-31 | 2024-04-05 | 中国电子科技集团公司第十五研究所 | Magnetic field enhanced low-orbit satellite 6G signal detector |
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