CN110535003A - A kind of spin terahertz sources device and method - Google Patents
A kind of spin terahertz sources device and method Download PDFInfo
- Publication number
- CN110535003A CN110535003A CN201910772551.2A CN201910772551A CN110535003A CN 110535003 A CN110535003 A CN 110535003A CN 201910772551 A CN201910772551 A CN 201910772551A CN 110535003 A CN110535003 A CN 110535003A
- Authority
- CN
- China
- Prior art keywords
- spin
- ferromagnetic layers
- terahertz
- ferromagnetic
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Hall/Mr Elements (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The present invention provides a kind of spin terahertz sources device and method, pumping laser is penetrated the double-layer nanometer film that the ferromagnetic layer by contacting with each other is formed with non-ferromagnetic layers using femto-second laser, and give off the first terahertz pulse from non-ferromagnetic layers；Simultaneously, using current source to non-ferromagnetic layers input current, to generate spin current in non-ferromagnetic layers, make ferromagnetic layer that magnetic overturning occur using its spin(-)orbit square caused, and opposite polarity second terahertz pulse with the first terahertz pulse is given off from non-ferromagnetic layers, so that the opposite polarity terahertz pulse of terahertz pulse for giving off from non-ferromagnetic layers and initially generating.The present invention can quickly change the polarity of the terahertz pulse given off, and to give off opposite polarity terahertz pulse, and structure is simple, easy to operate, be conducive to the production and application of related THz devices.
Description
Technical field
The present invention relates to terahertz pulse technical field more particularly to a kind of spin terahertz sources device and methods.
Background technique
Terahertz (THz) wave contains the electromagnetic wave that frequency is 0.1-10THz, and the electromagnetic radiation of this wave band has very strong
See-through capabilities, can be used as a kind of " probe " to carry out in-depth study to the inside of affairs.With the skill of field of new materials
Art development, Terahertz Technology are more and more paid attention to.Terahertz Technology is in terahertz time-domain spectroscopy, terahertz imaging, too
Hertz radar, terahertz emission, communication, field of biomedicine suffer from broad application prospect.
Currently, Terahertz Technology still has by force the terahertz emission source of efficient, high power, low cost and working and room temperature
Strong demand, common terahertz emission source are mainly based upon the generation of photonics method, and common terahertz emission source is general
Terahertz pulse is generated using the GaAs photoconducting antenna of zinc telluridse optical rectification effect or low-temperature epitaxy, both methods is mature
Degree is high, and the electric field strength of the terahertz pulse of generation is high, stability is good, complicated, with high costs etc. scarce but there are preparation processes
Point can not achieve large-scale production and application, therefore recently, occur realizing that terahertz sources break through above-mentioned bottle using spin
Neck, to realize terahertz sources source efficiently, inexpensive and controllable polarization state.
The terahertz sources source mainly utilizes femto-second laser pulse irradiation ferromagnetic layer and non-ferromagnetic layers heterojunction structure to generate
THz wave, ferromagnetic layer absorb the energy band that light energy makes electronics d band under Fermi surface transit to Fermi surface or more, generate non-equilibrium
Electronics distribution；Sp characteristic electron is presented in the electronics spun up being stimulated, and d characteristic electron is presented in the electronics for spinning downward,
And the mobility ratio of the electronics spun up spins, the mobility of downward electronics is 5 times high, thus generates from ferromagnetic layer to non-ferric
The instantaneous spin polarization transmission of magnetosphere is instantaneous spin current, then due to inverse logic gates or inverse La Shiba effect, spin
Upwards and the downward electronics that spins is dispersed into opposite direction, and the instantaneous spin current for injecting non-ferromagnetic layers is transformed into instantaneous charge
Stream, to give off terahertz pulse.
But the terahertz sources source can not quickly change the polarity of the terahertz pulse of output, be unfavorable for related terahertz
The hereby production and application of device, so that Terahertz Technology can not be in terahertz time-domain spectroscopy, terahertz imaging, Terahertz thunder
It reaches, terahertz emission, communication, field of biomedicine are widely applied.
Summary of the invention
In order to solve the problems, such as that current terahertz sources source can not quickly change the polarity of the terahertz pulse of output, one
Aspect, the embodiment of the present invention provide a kind of spin terahertz sources device, which includes: that femto-second laser, double-layer nanometer are thin
Film and current source；Wherein, double-layer nanometer film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, and ferromagnetic layer and non-ferromagnetic layers are equal
For nano thin-film；Femto-second laser gives off for exporting pumping laser and penetrating double-layer nanometer film, and from non-ferromagnetic layers
One terahertz pulse；Current source is used for non-ferromagnetic layers input current, and to generate spin current in non-ferromagnetic layers, spin current causes certainly
Rotation orbital moment makes ferromagnetic layer occur magnetic overturning, and gives off opposite polarity the with the first terahertz pulse from non-ferromagnetic layers
Two terahertz pulses.
Preferably, femto-second laser is femtosecond laser oscillator, femtosecond laser method device or optical fiber femtosecond laser, femtosecond
The pulse width of the pumping laser of laser output is less than 1ps.
Preferably, the material of non-ferromagnetic layers is strong Quantum geometrical phase material, and strong Quantum geometrical phase material is heavy metal
Material or topological insulating materials；Wherein, heavy metal material includes one of Pt, Ta or W or a variety of combination layers；Topology insulation
Material includes Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3Or (BixSb1-x)2Te3Any one of or any alloy.
Preferably, the material of ferromagnetic layer includes transition metal or transition metal alloy.
Preferably, current source is DC current source or ac current source.
On the other hand, the embodiment of the present invention also provides a kind of spin Terahertz based on above-mentioned spin terahertz sources device
Launching technique this method comprises: pumping laser is penetrated double-layer nanometer film, and gives off the first Terahertz arteries and veins from non-ferromagnetic layers
Punching, wherein double-layer nanometer film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, and ferromagnetic layer and non-ferromagnetic layers are nanometer thin
Film；To non-ferromagnetic layers input current, to generate spin current in non-ferromagnetic layers, spin current, which causes spin(-)orbit square, makes the ferromagnetic layer
Magnetic overturning occurs, and gives off opposite polarity second terahertz pulse with the first terahertz pulse from non-ferromagnetic layers.
Preferably, pumping laser is penetrated into double-layer nanometer film, and gives off the first terahertz pulse from non-ferromagnetic layers, also
If including: the vertical ferromagnetic layer incidence of pumping laser and generating the first instantaneous spin current in ferromagnetic layer, the first instantaneous spin current exists
Non-ferromagnetic layers are changed into the first electric charge stream, and give off the first terahertz pulse from non-ferromagnetic layers；If the vertical non-ferric of pumping laser
Magnetosphere is incident and generates the second instantaneous spin current in ferromagnetic layer, then the second instantaneous spin current is changed into the second charge in non-ferromagnetic layers
Stream, and given off and the first terahertz pulse from non-ferromagnetic layers.
Preferably, the first instantaneous spin current is changed into the first electric charge stream and the second instantaneous spin current is changed into the second electricity
Lotus stream is based on inverse logic gates or inverse La Shiba effect.
Preferably, to non-ferromagnetic layers input current, to generate spin current in non-ferromagnetic layers, be based on logic gates or
La Shiba effect.
The embodiment of the present invention provides a kind of spin terahertz sources device and method, using femto-second laser by pumping laser
The double-layer nanometer film that ferromagnetic layer and non-ferromagnetic layers by contacting with each other form is penetrated, and gives off the first terahertz from non-ferromagnetic layers
Hereby pulse；Meanwhile using current source to non-ferromagnetic layers input current, to generate spin current in non-ferromagnetic layers, spin current causes certainly
Rotation orbital moment makes ferromagnetic layer occur magnetic overturning, and gives off opposite polarity the with the first terahertz pulse from non-ferromagnetic layers
Two terahertz pulses, so that the opposite polarity Terahertz arteries and veins of terahertz pulse for giving off from non-ferromagnetic layers and initially generating
Punching.The embodiment of the present invention can quickly change the polarity of the terahertz pulse given off, to give off opposite polarity Terahertz arteries and veins
Punching, and structure is simple, easy to operate, is conducive to the production and application of related THz devices.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of the spin terahertz sources device of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram before the ferromagnetic layer magnetism overturning of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram after the ferromagnetic layer magnetism overturning of the embodiment of the present invention；
Fig. 4 is the flow diagram of the spin terahertz sources method of the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Fig. 1 is the structural schematic diagram of the spin terahertz sources device of the embodiment of the present invention, as shown in Figure 1, the present invention is real
It applies example and a kind of spin terahertz sources device is provided, which includes: femto-second laser 1, double-layer nanometer film and current source 2；
Wherein, double-layer nanometer film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, and ferromagnetic layer and non-ferromagnetic layers are nano thin-film；
Femto-second laser 1 gives off the first Terahertz arteries and veins from non-ferromagnetic layers for exporting pumping laser and penetrating double-layer nanometer film
Punching；Current source 2 is used for non-ferromagnetic layers input current, and to generate spin current in non-ferromagnetic layers, spin current causes spin(-)orbit square
Make ferromagnetic layer that magnetic overturning occur, and gives off opposite polarity second Terahertz with the first terahertz pulse from non-ferromagnetic layers
Pulse.
It is appreciated that the various in double-layer nanometer film contacted with each other with largest face between ferromagnetic layer and non-ferromagnetic layers,
That is the largest face of the ferromagnetic layer and largest face of non-ferromagnetic layers is parallel to each other is contacted.
Specifically, pumping laser is exported using femto-second laser 1, pumping laser is made to penetrate double-layer nanometer film, generate the
One terahertz pulse；Meanwhile using current source 2 to non-ferromagnetic layers input current, spin current is generated in non-ferromagnetic layers, spin current draws
Ferromagnetic layer is acted on from rotation orbital moment and is flipped the magnetism of ferromagnetic layer, since the magnetism of ferromagnetic layer is flipped, from
And make generation and the initial opposite polarity electric charge stream of electric charge stream in non-ferromagnetic layers, so that the device is defeated from non-ferromagnetic layers
Out with opposite polarity second terahertz pulse of the first terahertz pulse.
It should be noted that spin(-)orbit square is generated in ferromagnetic layer, specially non-ferromagnetic layers generate spin current, from
Eddy flow, which causes, generates spin orbital moment in ferromagnetic layer.
It should also be noted that, current source 2 exports pumping laser with femto-second laser 1 and wears to non-ferromagnetic layers input current
Saturating double-layer nanometer film is synchronous to carry out, alternatively, current source 2 swashs to non-ferromagnetic layers input current in the output pumping of femto-second laser 1
Light carries out after penetrating double-layer nanometer film.
Spin terahertz sources device provided in an embodiment of the present invention, using current source to the non-ferromagnetic of double-layer nanometer film
Layer is passed through electric current, so that the magnetic overturning of ferromagnetic layer, so that being generated in non-ferromagnetic layers opposite with initial electric charge stream polarity
Electric charge stream so that using femto-second laser project pumping laser penetrate non-ferromagnetic layers double-layer nanometer membrane structure export
With the opposite polarity terahertz pulse of terahertz pulse initially generated.The embodiment of the present invention can quickly change the terahertz given off
The polarity of hereby pulse, to give off opposite polarity terahertz pulse, and structure is simple, easy to operate, is conducive to related terahertz
The hereby production and application of device.
It should be noted that femto-second laser 1 is femtosecond laser oscillator, femtosecond laser method device or optical fiber femtosecond laser
The pulse width of device 1, the pumping laser that femto-second laser 1 exports is less than 1ps.
It should also be noted that, the material of non-ferromagnetic layers is strong Quantum geometrical phase material, strong Quantum geometrical phase material
For heavy metal material or topological insulating materials；Wherein, heavy metal material includes one of Pt, Ta or W or a variety of combination layers；
Topological insulating materials includes Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3Or (BixSb1-x)2Te3Any one of or it is any
Alloy.
Further, the material of ferromagnetic layer includes transition metal or transition metal alloy.
Further, current source 2 is DC current source or ac current source.
Based on the above embodiment, Fig. 4 is the flow diagram of the spin terahertz sources method of the embodiment of the present invention, is such as schemed
Shown in 4, the embodiment of the present invention also provides a kind of spin terahertz sources method based on above-mentioned spin terahertz sources device, should
Method includes: S1, pumping laser is penetrated to double-layer nanometer film, and gives off the first terahertz pulse from non-ferromagnetic layers, wherein
Double-layer nanometer film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, and ferromagnetic layer and non-ferromagnetic layers are nano thin-film；S2, to
Non-ferromagnetic layers input current, to generate spin current in non-ferromagnetic layers, spin current, which causes spin(-)orbit square, makes ferromagnetic layer that magnetism occur
Overturning, and opposite polarity second terahertz pulse with the first terahertz pulse is given off from non-ferromagnetic layers.
Specifically, Fig. 2 is the structural schematic diagram before the ferromagnetic layer magnetism overturning of the embodiment of the present invention, and Fig. 3 is that the present invention is real
Structural schematic diagram after applying the ferromagnetic layer magnetism overturning of example penetrates from any direction pumping laser double as shown in Figures 2 and 3
Layer nano thin-film, and the first terahertz pulse is given off from non-ferromagnetic layers；Meanwhile to non-ferromagnetic layers input current, in non-ferric
Magnetosphere generates spin current, and spin current causes the magnetic overturning that spin(-)orbit square makes ferromagnetic layer, so that producing in non-ferromagnetic layers
The raw and initial opposite polarity electric charge stream of electric charge stream, so that device output is opposite polarity with the first terahertz pulse
Second terahertz pulse.
It should be noted that non-ferromagnetic layers input current, penetrate that double-layer nanometer film is synchronous to carry out with pumping laser, or
Person carries out after pumping laser penetrates double-layer nanometer film to non-ferromagnetic layers input current.
Spin terahertz sources method provided in an embodiment of the present invention, using current source 2 to the non-ferric of double-layer nanometer film
Magnetosphere is passed through electric current, so that thus the magnetic overturning of ferromagnetic layer makes so that non-ferromagnetic layers generate opposite polarity electric charge stream
It obtains and penetrates the opposite terahertz of non-ferromagnetic layers double-layer nanometer membrane structure output polarity using the pumping laser that femto-second laser 1 projects
Hereby pulse.The embodiment of the present invention can quickly change the polarity of the terahertz pulse given off, to give off opposite polarity terahertz
Hereby pulse, and structure is simple, easy to operate, is conducive to the production and application of related THz devices.
Based on the above embodiment, it as shown in Fig. 2, pumping laser is penetrated double-layer nanometer film, and is radiated from non-ferromagnetic layers
First terahertz pulse out, further includes: if the vertical ferromagnetic layer of pumping laser is incident and generates the first instantaneous spin current in ferromagnetic layer,
Then the first instantaneous spin current is changed into the first electric charge stream in non-ferromagnetic layers, and gives off the first terahertz pulse from non-ferromagnetic layers；
If the vertical non-ferromagnetic layers of pumping laser are incident and generate the second instantaneous spin current in ferromagnetic layer, the second instantaneous spin current is in non-ferric
Magnetosphere is changed into the second electric charge stream, and gives off the first terahertz pulse from non-ferromagnetic layers.
Specifically, no matter that pumping laser is incident from any direction except double-layer nanometer film, from non-ferromagnetic layers spoke
Project the first terahertz pulse.It generally, can be by the vertical ferromagnetic layer of pumping laser in order to enable pumping laser gives full play to effectiveness
Or non-ferromagnetic layers are incident, for example, the first instantaneous spin current is generated in ferromagnetic layer if the vertical ferromagnetic layer of pumping laser is incident,
First instantaneous spin current is changed into the first electric charge stream in non-ferromagnetic layers, and gives off the first terahertz pulse from non-ferromagnetic layers；If
The vertical non-ferromagnetic layers of pumping laser are incident, then directly act on ferromagnetic layer through non-ferromagnetic layers, and it is instantaneous to generate second in ferromagnetic layer
Spin current, the second instantaneous spin current is changed into the second electric charge stream in non-ferromagnetic layers, and gives off the first Terahertz from non-ferromagnetic layers
Pulse.
It should be noted that the first instantaneous spin current is changed into the first electric charge stream and the second instantaneous spin current is changed into
Second electric charge stream is based on inverse logic gates or inverse La Shiba effect.After being passed through electric current to non-ferromagnetic layers, make non-ferromagnetic layers
In electric charge stream be changed into spin current, be based on logic gates or La Shiba effect.
The present invention joined logic gates or draw assorted on the basis of inverse logic gates or inverse La Shiba effect
Ba Xiaoying can quickly change the polarity of the terahertz pulse given off, to give off opposite polarity terahertz pulse, and structure
Simply, easy to operate, ferromagnetic layer and non-ferromagnetic layers group by contacting with each other can be quickly prepared using mature magnetic control sputtering system
At double-layer nanometer film, generate Terahertz arteries and veins without the complicated micro-nano technology technology for preparing Large-aperture photoconductive antennas
Punching, is conducive to the production and application of related THz devices.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (9)
1. a kind of spin terahertz sources device characterized by comprising femto-second laser, double-layer nanometer film and current source；
Wherein, the double-layer nanometer film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, the ferromagnetic layer and the non-ferric
Magnetosphere is nano thin-film；
The femto-second laser is radiated for exporting pumping laser and penetrating the double-layer nanometer film from the non-ferromagnetic layers
First terahertz pulse out；
The current source is used for the non-ferromagnetic layers input current, to generate spin current, the spin in the non-ferromagnetic layers
The spin(-)orbit square that stream causes makes ferromagnetic layer that magnetic overturning occur, and gives off and first Terahertz from the non-ferromagnetic layers
Opposite polarity second terahertz pulse of pulse.
2. spin terahertz sources device according to claim 1, which is characterized in that the femto-second laser swashs for femtosecond
Optical generator, femtosecond laser method device or optical fiber femtosecond laser；The arteries and veins of the pumping laser of the femto-second laser output
Width is rushed less than 1ps.
3. spin terahertz sources device according to claim 1, which is characterized in that the material of the non-ferromagnetic layers is strong
Quantum geometrical phase material, the strong Quantum geometrical phase material are heavy metal material or topological insulating materials；
Wherein, the heavy metal material includes one of Pt, Ta or W or a variety of combination layers；The topology insulating materials packet
Include Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3Or (BixSb1-x)2Te3Any one of or any alloy.
4. spin terahertz sources device according to claim 1, which is characterized in that the material of the ferromagnetic layer included
Cross metal or transition metal alloy.
5. spin terahertz sources device according to claim 1, which is characterized in that the current source is DC current source
Or ac current source.
6. a kind of spin terahertz sources method characterized by comprising
Pumping laser is penetrated into double-layer nanometer film, and gives off the first terahertz pulse from non-ferromagnetic layers；Wherein, the bilayer
Nano thin-film includes the ferromagnetic layer and non-ferromagnetic layers contacted with each other, and the ferromagnetic layer and the non-ferromagnetic layers are nano thin-film；
To the non-ferromagnetic layers input current, to generate spin current, the spin rail that the spin current causes in the non-ferromagnetic layers
Road square makes the ferromagnetic layer that magnetic overturning occur, and gives off the polarity with first terahertz pulse from the non-ferromagnetic layers
The second opposite terahertz pulse.
7. the spin terahertz sources method according to claim 6, which is characterized in that described that pumping laser is penetrated bilayer
Nano thin-film, and the first terahertz pulse is given off from non-ferromagnetic layers, further includes:
If vertically the ferromagnetic layer is incident and generates the first instantaneous spin current in the ferromagnetic layer for the pumping laser, described the
One instantaneous spin current is changed into the first electric charge stream in the non-ferromagnetic layers, and gives off first terahertz from the non-ferromagnetic layers
Hereby pulse；
If vertically the non-ferromagnetic layers are incident and generate the second instantaneous spin current in the ferromagnetic layer for the pumping laser, described
Second instantaneous spin current is changed into the second electric charge stream in the non-ferromagnetic layers, and gives off described first too from the non-ferromagnetic layers
Hertz pulse.
8. spin terahertz sources method according to claim 7, which is characterized in that the first instantaneous spin current transformation
It is changed into second electric charge stream for first electric charge stream and the second instantaneous spin current, is based on inverse spin Hall
Effect or inverse La Shiba effect.
9. spin terahertz sources method according to claim 8, which is characterized in that described to be inputted to the non-ferromagnetic layers
Electric current is based on logic gates or La Shiba effect to generate spin current in the non-ferromagnetic layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910772551.2A CN110535003B (en) | 2019-08-21 | 2019-08-21 | Spinning terahertz transmitting device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910772551.2A CN110535003B (en) | 2019-08-21 | 2019-08-21 | Spinning terahertz transmitting device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110535003A true CN110535003A (en) | 2019-12-03 |
| CN110535003B CN110535003B (en) | 2021-02-05 |
Family
ID=68662283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910772551.2A Active CN110535003B (en) | 2019-08-21 | 2019-08-21 | Spinning terahertz transmitting device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110535003B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
| EP4030231A1 (en) * | 2021-01-14 | 2022-07-20 | Martin-Luther-Universität Halle-Wittenberg | Spintronic component |
| WO2023091216A1 (en) * | 2021-11-17 | 2023-05-25 | Wisconsin Alumni Research Foundation | Magnonic electromagnetic radiation sources with high output power at high frequencies |
| CN116546875A (en) * | 2023-04-23 | 2023-08-04 | 西安电子科技大学 | Direct current driven high-power spin oscillator and preparation process thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4080178A1 (en) * | 2021-04-23 | 2022-10-26 | Freie Universität Berlin | Spintronic terahertz emitter |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108594481A (en) * | 2018-06-05 | 2018-09-28 | 北京航空航天大学 | The THz wave transmitter of magnetic control polarization state |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN109672071A (en) * | 2019-01-03 | 2019-04-23 | 北京航空航天大学 | A kind of production method of spin terahertz transmitter and THz wave |
| CN109830874A (en) * | 2019-04-08 | 2019-05-31 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
| CN110010637A (en) * | 2019-04-12 | 2019-07-12 | 中国科学院半导体研究所 | A kind of spin(-)orbit square magnetic random access memory and preparation method |
-
2019
- 2019-08-21 CN CN201910772551.2A patent/CN110535003B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108594481A (en) * | 2018-06-05 | 2018-09-28 | 北京航空航天大学 | The THz wave transmitter of magnetic control polarization state |
| CN109672071A (en) * | 2019-01-03 | 2019-04-23 | 北京航空航天大学 | A kind of production method of spin terahertz transmitter and THz wave |
| CN109830874A (en) * | 2019-04-08 | 2019-05-31 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
| CN110010637A (en) * | 2019-04-12 | 2019-07-12 | 中国科学院半导体研究所 | A kind of spin(-)orbit square magnetic random access memory and preparation method |
Non-Patent Citations (2)
| Title |
|---|
| DEYIN KONG等: "Broadband Spintronic Terahertz Emitter with Magnetic‐Field Manipulated Polarizations", 《ADVANCED OPTICAL MATERIALS》 * |
| MENGJI CHEN等: "Current-Enhanced Broadband THz Emission from Spintronic Devices", 《ADVANCED OPTICAL MATERIALS》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110687070A (en) * | 2019-10-17 | 2020-01-14 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN110687070B (en) * | 2019-10-17 | 2022-03-01 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112510469A (en) * | 2020-09-27 | 2021-03-16 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
| CN112103756A (en) * | 2020-10-12 | 2020-12-18 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| EP4030231A1 (en) * | 2021-01-14 | 2022-07-20 | Martin-Luther-Universität Halle-Wittenberg | Spintronic component |
| WO2023091216A1 (en) * | 2021-11-17 | 2023-05-25 | Wisconsin Alumni Research Foundation | Magnonic electromagnetic radiation sources with high output power at high frequencies |
| US11817242B2 (en) | 2021-11-17 | 2023-11-14 | Wisconsin Alumni Research Foundation | Magnonic electromagnetic radiation sources with high output power at high frequencies |
| CN116546875A (en) * | 2023-04-23 | 2023-08-04 | 西安电子科技大学 | Direct current driven high-power spin oscillator and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110535003B (en) | 2021-02-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110535003A (en) | A kind of spin terahertz sources device and method | |
| CN109830874A (en) | One kind controlling magnetized spinning electron THz wave transmitter based on voltage | |
| CN105914564B (en) | A kind of high-intensity broadband THz wave generator | |
| CN103984124B (en) | Multi-frequency response TeraHertz wave modulator | |
| Ida et al. | Hysteresis relation between turbulence and temperature modulation during the heat pulse propagation into a magnetic island in DIII-D | |
| Zhou et al. | Dipole squeezing in the two-photon Jaynes-Cummings model with superposition state preparation | |
| CN108023263B (en) | Terahertz pulse generator for regulating and controlling magnetic field and voltage | |
| CN109672071A (en) | A kind of production method of spin terahertz transmitter and THz wave | |
| Tanaka | Magnetosphere–ionosphere convection as a compound system | |
| Talara et al. | Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780 nm pump beam | |
| CN106532220B (en) | A kind of spin-transfer torque nanometer oscillator based on Skyrmions | |
| CN104779304A (en) | Method for regulating ratio of Rashba and Dresselhaus spin-orbit coupling for semiconductor quantum well material | |
| CN104009371B (en) | A kind of generator of high power terahertz emission of regulable center frequency and method | |
| Jiang et al. | Spintronic terahertz emitter with integrated electromagnetic control | |
| CN209658587U (en) | A kind of spin terahertz transmitter | |
| CN209626634U (en) | One kind controlling magnetized spinning electron THz wave transmitter based on voltage | |
| Hasegawa et al. | Limitation in growth time of stimulated Compton scattering in x‐ray regime | |
| Molavi Choobini et al. | Role of laser pulse profile in terahertz radiation from magnetized and collisional clustered plasma by beating laser beams | |
| CN103757656A (en) | Photoelectrochemical hydrogen producing device combining primary battery and photoelectrochemical battery | |
| Dommermuth | A Parametric Study of the Electric Field in the Atmosphere due to the Transport of Space Charge Density by the Meandering Wind over the Ocean Surface | |
| CN112532320B (en) | Method for generating weak light low-speed stable light solitons | |
| CN111682085B (en) | Gold nano array substrate, composite structure of gold nano array substrate and near-infrared quantum cutting luminescent material and preparation method of composite structure | |
| Koshibae et al. | Carrier multiplication and separation in systems with strong electron interaction: Photoinduced dynamics of a junction solar cell | |
| Liu | Destruction of the inertial recirculation by the annual wind migration | |
| Thakur et al. | Pulse Slippage of Resonant Third Harmonic Generation in Electron-Hole Plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |