CN209658587U - A kind of spin terahertz transmitter - Google Patents

A kind of spin terahertz transmitter Download PDF

Info

Publication number
CN209658587U
CN209658587U CN201920006273.5U CN201920006273U CN209658587U CN 209658587 U CN209658587 U CN 209658587U CN 201920006273 U CN201920006273 U CN 201920006273U CN 209658587 U CN209658587 U CN 209658587U
Authority
CN
China
Prior art keywords
magnetic field
ferromagnetic
topological
layer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201920006273.5U
Other languages
Chinese (zh)
Inventor
聂天晓
吴晓君
王航天
赵海慧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beihang University
Beijing University of Aeronautics and Astronautics
Original Assignee
Beijing University of Aeronautics and Astronautics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Aeronautics and Astronautics filed Critical Beijing University of Aeronautics and Astronautics
Priority to CN201920006273.5U priority Critical patent/CN209658587U/en
Application granted granted Critical
Publication of CN209658587U publication Critical patent/CN209658587U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The utility model embodiment provides a kind of spin terahertz transmitter, including at least femto-second laser, topological structure film and magnetic field generator, the pump light of the femto-second laser output passes through the topological structure film, generate the THz wave that the direction in magnetic field is generated based on the magnetic field generator, the topological structure film includes topological insulator layer, ferromagnetic layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.Emitter structures provided by the embodiment of the utility model are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at low cost.

Description

A kind of spin terahertz transmitter
Technical field
The utility model embodiment is related to terahertz pulse generation technology field more particularly to a kind of spin terahertz sources Device.
Background technique
Terahertz (Terahertz, THz) wave is between far infrared and microwave, and covering frequence range is from 0.1-10THz. THz wave not only has wide practical use in fields such as medical imaging, safety inspection, product testing, space communications, and Terahertz pulse is the resonance probe of many low energy member excitations in condensed state matter.THz wave has many peculiar properties, For example transmittance, safety, very strong spectral resolving power etc., these properties assign THz wave broad application prospect, packet Include Terahertz radar and communication, spectrum and imaging, nondestructive inspection, safety detection etc..
However, Terahertz, which is applied, still has by force the terahertz emission source of efficient, high power, low cost, working and room temperature Strong demand.The currently used THz source based on photonics method specifically include that zinc telluridse (ZnTe) optical rectification effect and GaAs (LT-GaAs) photoconductive antenna of low-temperature epitaxy generates terahertz pulse.Both methods has maturity height, generates The advantage that the electric field strength of THz pulse is high, stability is good, but the preparation of both materials is complicated, and higher cost limits Terahertz The extensive use of device.Therefore it is improved on the basis of existing source, or above-mentioned requirements is met based on new physical principle development Terahertz emission source is of great significance.
Spintronics refers to control and manipulation electron spin, studies its transport property and constructs a Men Xue of new device Section.Certain physical phenomenons of spintronics, such as crossover magnon, antiferromagnetic resonance and ultrafast Spin dynamics, it is special Frequency is levied just at Terahertz frequency range;This combines Terahertz with spintronics, forms Terahertz spinning electron Learn this emerging cross discipline, be based on spintronics phenomenon and principle, researcher find and establish it is several it is novel too Hertz wave production method, mainly has: a) spin injection generates THz wave;B) THz wave based on antiferromagnetic resonance generates; C) THz wave based on ultrafast Spin dynamics generates.
Currently, mainly irradiating ferromagnetic/nonmagnetic metal heterojunction structure using femto-second laser pulse generates THz wave, ferromagnetic layer The energy band that light energy makes electronics d band under Fermi surface transit to Fermi surface or more is absorbed, nonequilibrium electronics distribution is generated;Due to Spin up with the different sample of downward density of electronic states, as a result generate from ferromagnetic layer to adjacent non-ferromagnetic layers (tungsten or platinum) Instantaneous spin polarization transmission, i.e., instantaneous spin current;Due to inverse logic gates, spins up and be dispersed into downward electronics Opposite direction, the instantaneous spin current for injecting non-magnetosphere is transformed into instantaneous electric charge stream, to give off broadband terahertz pulse.So And although many studies have shown that, ferromagnetic/nonmagnetic metal heterojunction structure bilayer can generate Terahertz spoke under Gold Films Irradiated by Femtosecond Laser It penetrates, however since the spin Hall angle of tungsten or platinum is smaller, enough instantaneous charge stream, the radiation of final Terahertz can not be generated Effect is not significant.
Utility model content
For the technical problems in the prior art, the utility model embodiment provides a kind of spin terahertz sources Device.
The utility model embodiment provides a kind of spin terahertz transmitter, includes at least femto-second laser, topological structure Film and magnetic field generator, the pump light of the femto-second laser output are generated by the topological structure film based on described Magnetic field generator generate magnetic field direction THz wave, the topological structure film include topological insulator layer, ferromagnetic layer and Non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
Optionally, the topological insulator layer and the ferromagnetic layer constitute double layer heterojunction structure.
Optionally, the topological insulator layer constitutes three layers of hetero-junctions with the ferromagnetic layer, the non-ferromagnetic layers and makes Obtaining the THz wave mutually enhances.
Optionally, the topological insulator layer is V-VI group element compound, specially Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3, (BixSb1-x)2Te3And its alloy.
Optionally, the ferromagnetic layer is transition metal or corresponding ferromagnetic alloy.
Optionally, the non-ferromagnetic layers are strong Quantum geometrical phase material, and the spin Hall with the topological insulator Angle is opposite.
Optionally, the femto-second laser is specially that femtosecond laser oscillator, femtosecond laser amplifier or optical fiber femtosecond swash Light device.
Optionally, the magnetic field generator is for generating the different size of magnetic field of different directions, to change the terahertz generated The hereby size and polarized state of wave.
It is thin to include at least femto-second laser, topological structure for spin terahertz transmitter provided by the embodiment of the utility model Film and magnetic field generator, the pump light of the femto-second laser output generate by the topological structure film and are based on the magnetic Field generator generates the THz wave in the direction in magnetic field, and the topological structure film includes topological insulator layer, ferromagnetic layer and non- Ferromagnetic layer, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.This is practical The emitter structures that new embodiment provides are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at low cost.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is Some embodiments of the utility model, for those of ordinary skill in the art, without creative efforts, It is also possible to obtain other drawings based on these drawings.
Fig. 1 is the side view of the topological structure film of spin terahertz transmitter provided by the embodiment of the utility model;
Fig. 2 is the top view of the topological structure film provided by the embodiment of the utility model in in-plane magnetic field;
Fig. 3 is that spin terahertz transmitter magnet provided by the embodiment of the utility model makes ferromagnetic layer magnetization change Curve graph.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to The range of the utility model protection.
The utility model embodiment provides a kind of spin terahertz transmitter, includes at least femto-second laser, topological structure Film and magnetic field generator, the pump light of the femto-second laser output are generated by the topological structure film based on described Magnetic field generator generate magnetic field direction THz wave, the topological structure film include topological insulator layer, ferromagnetic layer and Non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
Specifically, the pumping laser of the femto-second laser output penetrates the topological structure film, generates and is based on magnetic field The THz wave of direction polarization.The pulse width of the pumping laser of the femto-second laser output is less than 1ps.
Topological structure film is placed in magnetic in a constant face so that magnetic field is in-plane field as an example by the utility model embodiment In the H of field, the topological structure film generates THz wave under magnetic fields, specifically, in such a way that ultrafast spin emits, Based on unusual logic gates, in the way of external magnetisation, the terahertz of default spectrum width, default radiation field intensity is generated Hereby impulse radiation.
As shown in Figure 1, similarly assuming that magnetic field is constant in-plane field, the direction of magnetization M of ferromagnetic layer is directed toward magnetic direction.Fly The pumping laser of second laser output is incident on a face of topological structure film, can be generated in ferromagnetic layer it is contrary, greatly Small identical spin current Js injection topological insulator layer and nonmagnetic layer can be in materials at two layers due to inverse logic gates The identical electric charge stream Jc of size is generated, and since the spin Hall angle of two kinds of materials is on the contrary, the electric charge stream side that two kinds of materials generate To identical, and then it is identical to generate direction, the THz wave mutually enhanced.
New high-efficiency topology provided by the embodiment of the utility model protection spin terahertz transmitter, terahertz generation is in opening up Structural membrane i.e. topological insulator layer/three layers of ferromagnetic layer/non-ferromagnetic layers nano thin-film is flutterred, topological insulator property stablizes easily system It is standby, do not limited by crystalline size in traditional terahertz sources method, and due to its by topology protection surface state make it is this Material has biggish positive spin Hall angle, when being used in combination with the non-ferromagnetic layers of negative spin Hall angle, can produce than general Logical ferromagnetic layer/stronger THz wave of non-ferromagnetic layers double-layer structure.Optimized by the selection of material and sample structure, trilamellar membrane The Terahertz energy conversion efficiency of structure is even better than GaP (110), the ZnTe of 1mm based on laser oscillator in 0.25mm (110) terahertz emission and in photoconductive antenna.
New high-efficiency topology protection spin THz wave transmitter provided by the embodiment of the utility model is based on unusual spin Hall effect obtains ultrafast spinning current by an additional low-intensity magnetic field in topological structure film, to generate Terahertz arteries and veins Punching radiation.Topological structure film can be prepared using mature molecular beam epitaxy system.Without preparation large aperture photoconduction The complicated micro-nano technology technology of antenna overcomes traditional terahertz pulse radiation transmitter to material requirements height, and structure is multiple Miscellaneous disadvantage.
Relative to ferromagnetic layer/terahertz transmitter of the non-ferromagnetic layers double layer heterojunction structure as main material emerging at present Part is added topological insulator layer as complementation, using the topological protection feature of topological insulator surface state, enhances the strong of Terahertz Degree and emission effciency.
Due to reducing the complexity of transmitter to reduce costs without applying bias voltage.Moreover, using Ferromagnetic nano thin-film growing technology it is simple, can large area preparation, compared with traditional nonlinear crystal and high lead antenna, greatly Ground reduces the cost of transmitter.
Due in topological insulator layer/ferromagnetic layer/non-ferromagnetic layers three-decker film terahertz sources mechanism independent of Phonon makes the spectrum width of the THz wave generated be limited only by the pulse width of the pumping laser of femto-second laser generation, And it is unrelated with the factors such as the phonon vibration frequency of material itself and absorption, therefore can realize the hair of ultra wide band terahertz pulse radiation It penetrates.
It is thin to include at least femto-second laser, topological structure for spin terahertz transmitter provided by the embodiment of the utility model Film and magnetic field generator, the pump light of the femto-second laser output generate by the topological structure film and are based on the magnetic Field generator generates the THz wave in the direction in magnetic field, and the topological structure film includes topological insulator layer, ferromagnetic layer and non- Ferromagnetic layer, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.This is practical The emitter structures that new embodiment provides are simple, emission principle is simple, tranmitting frequency is high, pulse width is wide, at low cost.
Optionally, the topological insulator layer and the ferromagnetic layer constitute double layer heterojunction structure.
On the basis of the above embodiments, due to the special band structure of topological insulator, due in topological insulator The topology of Electronic Transport Processes to its special surface state is protected, so the material of topological insulating layer has very big spin(-)orbit coupling When closing characteristic, single layer topology insulating materials and ferrimagnet composition double layer heterojunction structure film, THz wave can also be carried out Transmitting.
Optionally, the topological insulator layer constitutes three layers of hetero-junctions with the ferromagnetic layer, the non-ferromagnetic layers and makes Obtaining the THz wave mutually enhances.
On the basis of the above embodiments, since topological insulator has positive spin Hall angle, with ferrimagnet, from When the nonmagnetic layer material that rotation Hall angle is negative constitutes three layers of hetero-junctions, the THz wave of transmitting can mutually enhance.
Specifically, by femto-second laser export pulse pump laser light topological insulator layer/ferromagnetic layer/it is non-ferromagnetic Layer three-decker film generates spin current, and spin current has the nonferromagnetic material of opposite spin Hall angle by upper and lower two, The identical electric charge stream in direction is generated, and then generates the THz wave mutually enhanced.
Specifically, the topological insulator layer is V-VI group element compound, specially Bi2Se3, Bi2Te3, BixSb1-x, Sb2Te3, (BixSb1-x)2Te3And its alloy.
Specifically, the ferromagnetic layer is transition metal or corresponding ferromagnetic alloy, for example, ferromagnetic layer material can be ferro-cobalt Boron alloy (CoFeB).
Specifically, the non-ferromagnetic layers are strong Quantum geometrical phase material, and the spin Hall with the topological insulator Angle is on the contrary, for example, non-ferromagnetic layers can be selected with big negative spin Hall angle heavy metal material, such as tungsten (W) or tantalum (Ta).
In the utility model embodiment, the concrete shape of topological structure film is not especially limited, can for it is round, Ellipse, square, rectangle or other irregular shapes, as long as the hot spot of pumping laser can be allow to be radiated at film completely It is upper.
It is only illustrated by taking round three-decker film as an example in the utility model embodiment.Due to stationary magnetic field be along The polarization state of uniform magnetic field in film surface, the terahertz pulse radiation of generation is linear polarization, and polarization direction vertical magnetic field Direction, as shown in Figure 2.
Optionally, the femto-second laser is specially that femtosecond laser oscillator, femtosecond laser amplifier or optical fiber femtosecond swash Light device.
Specifically, the magnetic field generator is for generating the different size of magnetic field of different directions, to change the terahertz generated The hereby size and polarized state of wave.
On the basis of the above embodiments, in the plane locating for the topological structure film, it is parallel or vertical that there are directions Directly in the magnetic field of film, the size and polarized state for generating THz wave can change by the direction and size that change magnetic field.
In the changes of magnetic field of topological structure thin membrane regions, the variation of the ferromagnetic layer intensity of magnetization, i.e., with the variation in magnetic field, The magnetized direction of ferromagnetic layer can change with size, and then influence the spin current of injection topological insulator layer and non-ferromagnetic layers, most The intensity and polarization state of transmitting THz wave are influenced eventually, as shown in Figure 3.
The utility model embodiment also provides a kind of production method of THz wave, is produced using above-mentioned any transmitter Raw THz wave.
The production method of spin terahertz transmitter provided by the embodiment of the utility model and THz wave, includes at least and flies The pump light of second laser, topological structure film and magnetic field generator, the femto-second laser output passes through the topological structure Film, generates the THz wave that the direction in magnetic field is generated based on the magnetic field generator, and the topological structure film includes topology Insulator layer, ferromagnetic layer and non-ferromagnetic layers, and the topological insulator layer, ferromagnetic layer and non-ferromagnetic layers be arranged successively fitting and Constitute heterojunction structure.Emitter structures provided by the embodiment of the utility model are simple, emission principle is simple, tranmitting frequency is high, arteries and veins It is wide, at low cost to rush width.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member It is physically separated with being or may not be, component shown as a unit may or may not be physics list Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness Labour in the case where, it can understand and implement.
Through the above description of the embodiments, those skilled in the art can be understood that each embodiment can It realizes by means of software and necessary general hardware platform, naturally it is also possible to pass through hardware.Based on this understanding, on Stating technical solution, substantially the part that contributes to existing technology can be embodied in the form of software products in other words, should Computer software product may be stored in a computer readable storage medium, such as ROM/RAM, magnetic disk, CD, including several fingers It enables and using so that a computer equipment (can be personal computer, server or the network equipment etc.) executes each implementation Method described in certain parts of example or embodiment.
Finally, it should be noted that above embodiments are only to illustrate the technical solution of the utility model, rather than its limitations; Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc. With replacement;And these are modified or replaceed, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution The spirit and scope of scheme.

Claims (5)

1. a kind of spin terahertz transmitter, which is characterized in that include at least femto-second laser, topological structure film and magnetic field hair Raw device, the pump light of the femto-second laser output are generated and are produced based on the magnetic field generator by the topological structure film The THz wave in the direction of magnetisation field, the topological structure film include topological insulator layer, ferromagnetic layer and non-ferromagnetic layers, and The topological insulator layer, ferromagnetic layer and non-ferromagnetic layers are arranged successively fitting and constitute heterojunction structure.
2. transmitter according to claim 1, which is characterized in that the topological insulator layer and ferromagnetic layer composition are double Layer heterojunction structure.
3. transmitter according to claim 1, which is characterized in that the topological insulator layer and the ferromagnetic layer, described Non-ferromagnetic layers constitute three layers of hetero-junctions and the THz wave are mutually enhanced.
4. transmitter according to claim 1, which is characterized in that the femto-second laser is specially femtosecond laser oscillation Device, femtosecond laser amplifier or optical fiber femtosecond laser.
5. transmitter according to claim 1, which is characterized in that the magnetic field generator is for generating different directions difference The magnetic field of size, to change the size and polarized state of the THz wave generated.
CN201920006273.5U 2019-01-03 2019-01-03 A kind of spin terahertz transmitter Active CN209658587U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920006273.5U CN209658587U (en) 2019-01-03 2019-01-03 A kind of spin terahertz transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920006273.5U CN209658587U (en) 2019-01-03 2019-01-03 A kind of spin terahertz transmitter

Publications (1)

Publication Number Publication Date
CN209658587U true CN209658587U (en) 2019-11-19

Family

ID=68520185

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920006273.5U Active CN209658587U (en) 2019-01-03 2019-01-03 A kind of spin terahertz transmitter

Country Status (1)

Country Link
CN (1) CN209658587U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109672071A (en) * 2019-01-03 2019-04-23 北京航空航天大学 A kind of production method of spin terahertz transmitter and THz wave
CN117665411A (en) * 2024-01-31 2024-03-08 中国电子科技集团公司第十五研究所 Magnetic field enhanced low-orbit satellite 6G signal detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109672071A (en) * 2019-01-03 2019-04-23 北京航空航天大学 A kind of production method of spin terahertz transmitter and THz wave
CN117665411A (en) * 2024-01-31 2024-03-08 中国电子科技集团公司第十五研究所 Magnetic field enhanced low-orbit satellite 6G signal detector
CN117665411B (en) * 2024-01-31 2024-04-05 中国电子科技集团公司第十五研究所 Magnetic field enhanced low-orbit satellite 6G signal detector

Similar Documents

Publication Publication Date Title
CN109672071A (en) A kind of production method of spin terahertz transmitter and THz wave
Feng et al. Spintronic terahertz emitter
CN109830874B (en) Spintronic terahertz wave emitter based on voltage control magnetization
CN110535003B (en) Spinning terahertz transmitting device and method
Wu et al. Principles of spintronic THz emitters
Zhu et al. Piezotronic effect on Rashba spin–orbit coupling in a ZnO/P3HT nanowire array structure
Preu et al. Tunable, continuous-wave terahertz photomixer sources and applications
CN108023263B (en) Terahertz pulse generator for regulating and controlling magnetic field and voltage
CN101694558B (en) Metamaterial structure for modulating terahertz wave
Zhou et al. Graphene as broadband terahertz antireflection coating
Stenning et al. Magnetic control of a meta-molecule
CN209658587U (en) A kind of spin terahertz transmitter
Faltermeier et al. Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
Talara et al. Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780 nm pump beam
Vetter et al. Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures
Du et al. Terahertz interface physics: from terahertz wave propagation to terahertz wave generation
Candussio et al. Nonlinear intensity dependence of edge photocurrents in graphene induced by terahertz radiation
Jiang et al. Spintronic terahertz emitter with integrated electromagnetic control
Restrepo et al. Mid-Infrared linear optical transitions in δ-doped AlGaAs/GaAs triple-quantum well
Wang et al. Anisotropic properties of ultra-thin freestanding multi-walled carbon nanotubes film for terahertz polarizer application
CN209626634U (en) One kind controlling magnetized spinning electron THz wave transmitter based on voltage
Tian et al. Ferromagnetism and the optical properties of Mn-doped CdSe with the wurtzite structure
CN115202076A (en) Digital programmable array spinning terahertz source device
Gulyaev et al. sd-Exchange emission in ferromagnetic junctions
CN209044226U (en) The THz wave transmitter that polarization state is tunable

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant