CN109830874B - Spintronic terahertz wave emitter based on voltage control magnetization - Google Patents
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Abstract
The embodiment of the invention provides a spintronic terahertz wave transmitter based on voltage control magnetization, which is based on the inverse spin Hall effect, and uses pumping laser to irradiate a multilayer film structure comprising an electrode film layer, an insulating film layer, a ferromagnetic film layer and a nonferromagnetic film layer to generate broadband terahertz pulses; based on Lash bar effect and spin orbit theory, the aim of changing the output terahertz is achieved by applying controllable voltage to change the out-of-plane magnetization ratio; the material cost for forming the multilayer film structure is relatively low, the ferromagnetic film layer can be prepared in a large scale, the cost is greatly reduced unlike the existing nonlinear crystal and photoconductive antenna, and the ferromagnetic film layer has perpendicular magnetic anisotropy, so that the magnetization per unit area is far higher than the in-plane magnetization.
Description
Technical Field
The embodiment of the invention relates to the technical field of terahertz pulse generation, in particular to a spintronic terahertz wave transmitter based on voltage control magnetization.
Background
Terahertz (Terahertz, THz) is a band of the electromagnetic spectrum between the far infrared and millimeter waves, with frequencies between 0.1-10 THz. The terahertz wave in the frequency band has strong transmissivity, safety and spectrum resolution capability, and has wide application prospects in the fields of biological identification, safety monitoring, communication remote sensing and the like.
The current mature terahertz preparation and detection means are mainly based on optoelectronics, such as terahertz emission sources based on zinc telluride (ZnTe) light rectification effect and terahertz technology using gallium arsenide (LT-GaAs) photoconductive antennas grown at low temperature as emission sources. The advantages of the techniques are that the production technique system is mature, the generated electric field has high intensity and good stability, but the defects of complex preparation process, high cost and the like are also existed, and the large-scale production and application cannot be truly realized. Therefore, the method has important significance in improving the current terahertz technology and developing a novel terahertz emission source with high efficiency and low cost.
The rise and development of spintronics brings new breakthroughs to terahertz technology. Certain physical phenomena of spintronics, such as exchange magnons, antiferromagnetic resonance, ultrafast spin dynamics, etc., are characterized by frequencies just in the terahertz band. Based on the phenomenon and principle of spintronics, three novel terahertz wave generation methods are mainly generated, and the three novel terahertz wave generation methods are respectively as follows: spin injection generates terahertz waves, terahertz wave generation based on antiferromagnetic resonance, and terahertz wave generation based on ultrafast spin dynamics. The method for generating terahertz waves by irradiating a ferromagnetic/nonmagnetic heterogeneous multilayer film with femtosecond laser pulses based on ultrafast spin dynamics is currently popular.
The principle of the method based on ultrafast spin dynamics is that femtosecond laser pulses are utilized to irradiate the surface of a ferromagnetic/nonmagnetic heterogeneous multilayer film, and the internal electron absorption light energy of the ferromagnetic layer is transited to a state higher than the fermi level, so that unbalanced electron distribution is generated; the electrons in the upward direction of the spin generated by excitation have sp electron characteristics, and the electrons in the downward direction of the spin have p electron characteristics, and the speed of the electrons in the upward direction is 5 times faster than that of the electrons in the downward direction, so that instantaneous spin flow is generated. Due to the reverse spin Hall effect, electrons with upward and downward spin are scattered in opposite directions, and instant spin flow injected into a nonmagnetic layer is converted into instant charge flow, so that broadband terahertz pulses are radiated, but the terahertz wave device generated by the method has the defects of high energy consumption, low efficiency, poor controllability and the like.
Disclosure of Invention
The embodiment of the invention provides a spintronic terahertz wave transmitter based on voltage control magnetization, which is used for solving the defects of high energy consumption, low efficiency, poor controllability and the like when terahertz waves are generated based on ultrafast spin dynamics in the prior art and realizing the emission of ultra-wideband terahertz pulse radiation.
The embodiment of the invention provides a spintronic terahertz wave emitter based on voltage control magnetization, which comprises a multilayer film structure, a femtosecond laser and a voltage source;
the multi-layer film structure comprises an electrode film layer, an insulating film layer and a ferromagnetic film layer with perpendicular magnetic anisotropy and a non-ferromagnetic film layer with negative spin hall angle which are sequentially laminated;
the anode of the voltage source is connected with the electrode film layer, and the cathode of the voltage source is connected with the non-ferromagnetic film layer;
The femtosecond laser is arranged on one side of the electrode film layer of the multilayer film structure and used for emitting pump laser to the multilayer film structure.
The embodiment of the invention provides a spintronic terahertz wave transmitter based on voltage control magnetization, which is based on the inverse spin Hall effect, and uses pumping laser to irradiate a multilayer film structure comprising an electrode film layer, an insulating film layer, a ferromagnetic film layer and a nonferromagnetic film layer to generate broadband terahertz pulses; based on Lash bar effect and spin orbit theory, the aim of changing the output terahertz is achieved by applying controllable voltage to change the out-of-plane magnetization ratio; the material cost for forming the multilayer film structure is relatively low, the ferromagnetic film layer can be prepared in a large scale, the cost is greatly reduced unlike the existing nonlinear crystal and photoconductive antenna, and the ferromagnetic film layer has perpendicular magnetic anisotropy, so that the magnetization per unit area is far higher than the in-plane magnetization.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a side view of a terahertz wave emitted by a multilayer film structure of a spintronic terahertz wave emitter based on voltage control magnetization in an embodiment of the present invention;
Fig. 2 is a top view of a terahertz wave emitted by a multilayer film structure of a spintronic terahertz wave emitter based on voltage control magnetization according to an embodiment of the present invention;
Fig. 3 is a side view of a multilayer film structure of another embodiment of a spintronic terahertz wave transmitter based on voltage control magnetization according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the prior art, when terahertz waves are generated through ultrafast spin dynamics, femtosecond laser pulses are utilized to irradiate the surface of a ferromagnetic/non-magnetic heterogeneous multilayer film, and the light energy absorbed by electrons inside the ferromagnetic layer is transited to a state higher than the Fermi level, so that unbalanced electron distribution is generated; the electrons in the upward direction of the spin generated by excitation have sp electron characteristics, and the electrons in the downward direction of the spin have p electron characteristics, and the speed of the electrons in the upward direction is 5 times faster than that of the electrons in the downward direction, so that instantaneous spin flow is generated. Due to the reverse spin Hall effect, electrons with upward and downward spin are scattered to opposite directions, and instant spin flow injected into a nonmagnetic layer is converted into instant charge flow, so that broadband terahertz pulses are radiated, and various researches at present prove the reliability of the method, but the method still has the defects of high energy consumption, low efficiency, poor controllability and the like. Therefore, in the embodiment of the invention, based on the inverse spin hall effect, a pump laser is used for irradiating a multilayer film structure comprising an electrode film layer, an insulating film layer, a ferromagnetic film layer and a non-ferromagnetic film layer to generate broadband terahertz pulses; the following description and description will be made with reference to various embodiments.
FIG. 1 shows a spintronic terahertz wave transmitter based on voltage control magnetization, provided by an embodiment of the application, comprising a multilayer film structure, a femtosecond laser and a voltage source;
The multilayer film structure comprises an electrode film layer 1, an insulating film layer 2, a ferromagnetic film layer 3 with perpendicular magnetic anisotropy and a non-ferromagnetic film layer 4 with negative spin hall angle which are sequentially laminated;
the positive electrode of the voltage source is connected with the electrode film layer 1, and the negative electrode of the voltage source is connected with the non-ferromagnetic film layer 4;
the femtosecond laser is arranged on one side of the electrode film layer 1 of the multilayer film structure and is used for emitting pump laser to the multilayer film structure.
In this embodiment, the pump laser output by the femtosecond laser, specifically, a femtosecond laser oscillator, a femtosecond laser amplifier, or an optical fiber femtosecond laser, generates terahertz waves polarized based on the magnetic field direction through the above multilayer film structure.
In this embodiment, the initial ferromagnetic thin film layer 3 has perpendicular magnetic anisotropy, after a voltage is applied, the magnetization direction which is originally perpendicular to the interface and located out of the plane is converted into the magnetization direction in the plane, and at this time, the magnetic field applied to the in-plane fixation causes the in-plane magnetization direction to be along a certain fixed direction, as shown in fig. 1, after the femtosecond pump laser enters the multilayer film structure from the electrode thin film layer 1 side, spin flow with opposite direction is generated in the ferromagnetic thin film layer 3, the spin flow is injected into the non-ferromagnetic layer, the spin flow is converted into charge flow due to the counter spin hall effect, and thus terahertz waves are radiated. The external magnetic ratio of the inner surface of the surface can be changed by regulating the voltage, so that the purpose of regulating the terahertz is achieved. In addition, by changing the voltage, the ellipsometry of the terahertz wave radiated is also possible to change.
The voltage source applies stable and controllable voltage to the multilayer film structure through connecting the electrode film layers 1 at two ends of the structure, and the voltage can control the magnetization state of the ferromagnetic film layer 3, so that the purpose of controlling the emission of terahertz waves is achieved. The principle of voltage controlled magnetization is based on spin-orbit coupling effect and Lash bar effect. The magnetization inversion of the ferromagnetic thin film layer 3 having perpendicular magnetic anisotropy is required to overcome the barrier energy between magnetizations in different directions. Experiments prove that the barrier energy can be effectively reduced or even eliminated by applying proper voltage, so that the inversion is easily realized, and the in-plane and out-of-plane magnetization ratio of the ferromagnetic layer is changed.
As shown in fig. 1 and 2, a constant in-plane field H is applied inside the ferromagnetic thin film layer 3 so that the in-plane magnetization direction is along the magnetic field direction. The pump laser output by the femtosecond laser is incident on one surface of the multilayer film structure, the self-rotational flow Js with opposite directions and same size is generated in the ferromagnetic film layer 3, and the spin flow flows into the nonferromagnetic film layer 4 and is converted into the charge flow Jc due to the reverse spin hall effect, so that terahertz waves are radiated. The interface between the insulating film layer 2 and the ferromagnetic film layer 3 generates interface perpendicular magnetic anisotropy due to spin coupling effect. A variable voltage is applied to both ends of the electrode thin film layer 1 and the insulating thin film layer 2, so that potential barrier energy between out-of-plane inversion is reduced, and the out-of-plane magnetization ratio of the insulating thin film layer 2 is changed, that is, the number of magnetizations in the insulating thin film layer 2 along the magnetic field direction is changed, so that the generated self-rotational flow and charge flow are changed, and finally, the emergent terahertz wave is changed.
In the embodiment, the multilayer film structure can be grown by using the magnetron sputtering technology without preparing the complex micro-nano processing technology of the large-aperture photoconductive antenna, and the defects of high material requirement and complex structure of the traditional terahertz pulse radiation emitter are overcome.
Irradiating a multilayer film structure formed by the electrode film layer 1, the insulating film layer 2, the ferromagnetic film layer 3 and the nonferromagnetic film layer 4 by using femtosecond pump laser based on the inverse spin Hall effect to generate broadband terahertz pulses; based on Lash bar effect and spin orbit theory, the aim of changing the output terahertz is achieved by applying controllable voltage to change the out-of-plane magnetization ratio. In this embodiment, the material cost of the main structure is relatively low, and the ferromagnetic thin film layer 3 can be manufactured in a large scale, unlike the existing nonlinear crystal and photoconductive antenna, so that the cost is greatly reduced. The magnetization density is high: because the ferromagnetic thin film layer 3 structure used has perpendicular magnetic anisotropy, the magnetization per unit area is much higher than in-plane magnetization, and the energy consumption is reduced: in this embodiment, the voltage can effectively reduce or even eliminate the energy barrier of magnetization inversion, change the magnetization perpendicular to the surface into in-plane magnetization, and only a weak constant magnetic field needs to be applied in the plane to obtain the required magnetization direction.
The terahertz wave transmitter in this embodiment can also realize continuous controllability of terahertz: by varying the magnitude of the voltage, the amount of in-plane magnetization, and thus the intensity of the emitted terahertz, can be varied, and this intensity is varied with a continuous variation of the voltage. Because phonons do not exist in the structural film, the frequency spectrum width of the generated terahertz waves is only limited by the pulse width of pumping laser generated by the femtosecond laser, and is irrelevant to factors such as phonon vibration frequency and absorption of the material, and the emission of ultra-wideband terahertz pulse radiation can be realized.
On the basis of the above embodiment, the pulse width of the pump laser is less than 1ps.
In the present embodiment, the shape of the multilayer film structure is not particularly limited, and may be a regular or irregular shape, such as a circle, an ellipse, a square, a rectangle, or the like, or may be other irregular shape, as long as the spot of the pump laser can be completely irradiated on the multilayer film structure. In this embodiment, the pulse width of the pump laser output by the femtosecond laser is less than 1ps, and since the constant magnetic field is a uniform magnetic field along the surface of the multilayer film structure, the polarization state of the generated terahertz pulse radiation is a linear polarization state, and the polarization direction is perpendicular to the magnetic field direction.
On the basis of the embodiment, the electrode film layer 1 is a transparent metal layer, and the electrode film layer 1 is entirely or partially covered on the surface of the insulating film layer 2; the electrode film layer 1 is connected with the positive electrode of a voltage source.
On the basis of the above embodiment, the insulating film layer 2 is a metal oxide layer, such as MgO, and the insulating film layer 2 has two functions, namely, current interruption, and voltage drop up and down are maintained, so that the overall structure such as a battery is formed; and secondly, interface perpendicular magnetic anisotropy is formed on the interface with the ferromagnetic film layer 3 through a spin orbit coupling effect.
On the basis of the above embodiment, the ferromagnetic thin film layer 3 is a transition metal layer or a ferromagnetic alloy layer; the ferromagnetic alloy layer includes a CoFeB alloy layer and a CoFe alloy layer.
In this embodiment, the ferromagnetic thin film layer 3 is made of ferromagnetic alloy or transition metal, and a weak fixed magnetic field H is applied in the layer surface to regulate the magnetization direction in the plane, as shown in fig. 2.
On the basis of the embodiment, the non-ferromagnetic thin film layer 4 is a heavy metal material layer with a negative spin hall angle, the heavy metal material layer is a platinum material layer or a tungsten material layer, and the bottom of the non-ferromagnetic thin film layer 4 is connected with the negative electrode of the voltage source.
On the basis of the above embodiment, an embedded layer 5 is further disposed between the insulating film layer 2 and the ferromagnetic film layer 3, and the embedded layer 5 is a metal layer, a high polymer polyimide layer or an ion glue layer.
In this embodiment, as shown in fig. 3, the multilayer film structure in this embodiment includes an electrode film layer 1, an insulating film layer 2, an embedded layer 5, a ferromagnetic film layer 3, and a non-ferromagnetic film layer 4 that are sequentially stacked, in this embodiment, the embedded layer 5 is a metal layer, specifically Mg, co, fe, pt, etc., in other embodiments, the embedded layer 5 may also be a high polymer polyimide layer or an ion glue layer, and in this embodiment, by the structure of the embedded layer 5, the voltage control magnetization effect is effectively enhanced, and the accuracy of voltage control terahertz emission is improved.
In summary, the voltage-controlled magnetization-based spintronic terahertz wave transmitter provided in this embodiment irradiates a multilayer film structure including an electrode film layer, an insulating film layer, a ferromagnetic film layer and a non-ferromagnetic film layer with pump laser light based on the reverse spin hall effect to generate broadband terahertz pulses; based on Lash bar effect and spin orbit theory, the aim of changing the output terahertz is achieved by applying controllable voltage to change the out-of-plane magnetization ratio; the material cost for forming the multilayer film structure is relatively low, the ferromagnetic film layer can be prepared in a large scale, the cost is greatly reduced unlike the existing nonlinear crystal and photoconductive antenna, and the ferromagnetic film layer has perpendicular magnetic anisotropy, so that the magnetization per unit area is far higher than the in-plane magnetization.
The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. The spintronic terahertz wave emitter based on voltage control magnetization is characterized by comprising a multilayer film structure, a femtosecond laser and a voltage source;
the multi-layer film structure comprises an electrode film layer, an insulating film layer and a ferromagnetic film layer with perpendicular magnetic anisotropy and a non-ferromagnetic film layer with negative spin hall angle which are sequentially laminated;
the anode of the voltage source is connected with the electrode film layer, and the cathode of the voltage source is connected with the non-ferromagnetic film layer;
The femtosecond laser is arranged on one side of the electrode film layer of the multilayer film structure and used for emitting pump laser to the multilayer film structure.
2. The spintronic terahertz wave transmitter based on voltage control magnetization according to claim 1, characterized in that the pulse width of the pump laser is less than 1ps.
3. The spintronic terahertz wave emitter based on voltage control magnetization according to claim 1, wherein the non-ferromagnetic thin film layer is a heavy metal material layer that is a platinum material layer or a tungsten material layer.
4. The spintronic terahertz wave emitter based on voltage control magnetization according to claim 1, wherein the electrode thin film layer is a transparent metal layer, and the electrode thin film layer is entirely or partially covered on the surface of the insulating thin film layer; the insulating film layer is a metal oxide layer.
5. The spintronic terahertz wave emitter based on voltage control magnetization according to claim 1, wherein an embedding layer is further arranged between the insulating film layer and the ferromagnetic film layer, and the embedding layer is a metal layer, a high-molecular polymer polyimide layer or an ion glue layer.
6. The spintronic terahertz wave emitter based on voltage control magnetization according to claim 1, wherein the multilayer film structure is regular or irregular in shape.
7. The spintronic terahertz wave emitter based on voltage control magnetization according to claim 1, wherein the ferromagnetic thin film layer is a transition metal layer or a ferromagnetic alloy layer; the ferromagnetic alloy layer is a CoFeB alloy layer or a CoFe alloy layer.
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| CN110535003B (en) * | 2019-08-21 | 2021-02-05 | 北京航空航天大学 | Spinning terahertz transmitting device and method |
| CN110687070B (en) * | 2019-10-17 | 2022-03-01 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112103756B (en) * | 2020-10-12 | 2023-04-07 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| CN112563864B (en) * | 2020-12-15 | 2023-01-17 | 上海理工大学 | Terahertz transmitter based on spin filtering and preparation method thereof |
| CN113437211A (en) * | 2021-06-25 | 2021-09-24 | 上海理工大学 | Terahertz wave modulator based on magnetic tunnel junction and preparation method thereof |
| CN113922192A (en) * | 2021-08-25 | 2022-01-11 | 北京航空航天大学 | Full van der Waals spinning terahertz transmitter and method for regulating intensity and polarity of terahertz waves |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300022A (en) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | Terahertz wave amplifier, terahertz wave modulator, and communication apparatus, and sensing apparatus using it |
| US7978394B1 (en) * | 2008-03-17 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetic spin based photonic/plasmonic devices |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN106896081A (en) * | 2015-12-21 | 2017-06-27 | 中国科学院物理研究所 | THz wave meteorological detection device |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108963724A (en) * | 2018-08-01 | 2018-12-07 | 中国工程物理研究院电子工程研究所 | Dielectric-metal photonic crystal, preparation method and terahertz pulse generator |
| CN109411993A (en) * | 2018-12-28 | 2019-03-01 | 中国工程物理研究院电子工程研究所 | A kind of THz wave generator based on exchange bias magnetic field |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN109818234A (en) * | 2019-02-26 | 2019-05-28 | 中国科学技术大学 | A kind of intensity and polarization actively adjustable THz wave transmitter |
| CN209626634U (en) * | 2019-04-08 | 2019-11-12 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5590488B2 (en) * | 2010-08-27 | 2014-09-17 | 独立行政法人理化学研究所 | Current-spin current conversion element |
| US11112355B2 (en) * | 2019-12-26 | 2021-09-07 | Wisconsin Alumni Research Foundation | Narrowband, acoustically mediated spintronic terahertz emitter |
-
2019
- 2019-04-08 CN CN201910274974.1A patent/CN109830874B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007300022A (en) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | Terahertz wave amplifier, terahertz wave modulator, and communication apparatus, and sensing apparatus using it |
| US7978394B1 (en) * | 2008-03-17 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetic spin based photonic/plasmonic devices |
| CN102496835A (en) * | 2011-12-20 | 2012-06-13 | 上海理工大学 | m-i-n diode terahertz radiation source of ultra-pure intrinsic gallium arsenide material and production method thereof |
| CN106817124A (en) * | 2015-11-30 | 2017-06-09 | 中国科学院物理研究所 | Terahertz signal generator based on spintronics devices |
| CN106896081A (en) * | 2015-12-21 | 2017-06-27 | 中国科学院物理研究所 | THz wave meteorological detection device |
| CN105914564A (en) * | 2016-06-14 | 2016-08-31 | 西南交通大学 | High-strength broadband terahertz wave generator |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN108963724A (en) * | 2018-08-01 | 2018-12-07 | 中国工程物理研究院电子工程研究所 | Dielectric-metal photonic crystal, preparation method and terahertz pulse generator |
| CN109411993A (en) * | 2018-12-28 | 2019-03-01 | 中国工程物理研究院电子工程研究所 | A kind of THz wave generator based on exchange bias magnetic field |
| CN109818234A (en) * | 2019-02-26 | 2019-05-28 | 中国科学技术大学 | A kind of intensity and polarization actively adjustable THz wave transmitter |
| CN209626634U (en) * | 2019-04-08 | 2019-11-12 | 北京航空航天大学 | One kind controlling magnetized spinning electron THz wave transmitter based on voltage |
Non-Patent Citations (3)
| Title |
|---|
| Magnetically and electrically polarization-tunable THz emitter with integrated ferromagnetic heterostructure and large-birefringence liquid crystal;Hongsong Qiu.etl;《Applied Physics Express》;全文 * |
| Optimized Spintronic Terahertz Emitters Based on Epitaxial Grown Fe/Pt Layer Structures;Garik Torosyan.etl;《Scientific REPORTS》;20180122;第1页-第9页 * |
| 铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射;张顺浓;朱伟骅;李炬赓;金钻明;戴晔;张宗芝;马国宏;姚建铨;;物理学报(19);全文 * |
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