CN110535003B - Spinning terahertz transmitting device and method - Google Patents
Spinning terahertz transmitting device and method Download PDFInfo
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Abstract
The invention provides a spinning terahertz emission device and a method, wherein a femtosecond laser is used for penetrating pumping laser through a double-layer nano film consisting of a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and radiating a first terahertz pulse from the non-ferromagnetic layer; meanwhile, a current is input to the non-ferromagnetic layer with a current source to generate a spin current in the non-ferromagnetic layer, the ferromagnetic layer is magnetically inverted with a spin orbit torque induced by the spin current, and a second terahertz pulse having a polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer, thereby causing a terahertz pulse having a polarity opposite to that of the originally generated terahertz pulse to be radiated from the non-ferromagnetic layer. The terahertz radiation device can rapidly change the polarity of the radiated terahertz pulses to radiate the terahertz pulses with opposite polarities, has a simple structure, is simple and convenient to operate, and is beneficial to production and application of related terahertz devices.
Description
Technical Field
The invention relates to the technical field of terahertz pulses, in particular to a spinning terahertz transmitting device and method.
Background
Terahertz (THz) waves comprise electromagnetic waves with the frequency of 0.1-10THz, electromagnetic radiation in the wave band has strong perspective capability, and can be used as a probe to deeply research the interior of a transaction. With the technical development in the field of new materials, the terahertz technology is paid more and more attention. The terahertz technology has wide application prospects in the fields of terahertz time-domain spectroscopy, terahertz imaging, terahertz radar, terahertz radiation, communication and biomedicine.
Currently, terahertz technology still has strong requirements on terahertz radiation sources which work at high efficiency, high power, low cost and room temperature, the conventional terahertz radiation sources are mainly generated based on a photonics method, the conventional terahertz radiation sources generally utilize a zinc telluride rectification effect or a gallium arsenide photoconductive antenna grown at low temperature to generate terahertz pulses, the two methods are high in maturity, the generated terahertz pulses are high in electric field intensity and good in stability, but the defects of complex preparation process, high cost and the like exist, and large-scale production and application cannot be realized, so recently, the bottleneck of realizing terahertz emission by utilizing spinning is broken through, and the terahertz emission source with high efficiency, low cost and controllable polarization state is realized.
The terahertz emission source mainly utilizes femtosecond laser pulses to irradiate a ferromagnetic layer and a non-ferromagnetic layer heterostructure to generate terahertz waves, the ferromagnetic layer absorbs optical energy to enable electrons to jump from a d band below a fermi surface to an energy band above the fermi surface, and unbalanced electron distribution is generated; the excited spin-up electrons exhibit sp electron characteristics, the spin-down electrons exhibit d electron characteristics, and the mobility of the spin-up electrons is 5 times higher than that of the spin-down electrons, thereby generating transient spin-polarized transport from the ferromagnetic layer to the non-ferromagnetic layer, i.e., a transient spin current, and then the spin-up and spin-down electrons are scattered to opposite directions due to the inverse spin hall effect or the inverse rashbar effect, the transient spin current injected into the non-ferromagnetic layer is converted into a transient charge current, thereby radiating a terahertz pulse.
However, the terahertz emission source cannot rapidly change the polarity of the output terahertz pulses, and is not beneficial to the production and application of related terahertz devices, so that the terahertz technology cannot be widely applied to the fields of terahertz time-domain spectroscopy, terahertz imaging, terahertz radar, terahertz radiation, communication and biomedicine.
Disclosure of Invention
In order to solve the problem that the polarity of an output terahertz pulse cannot be changed rapidly by a current terahertz emission source, on one hand, an embodiment of the invention provides a spin terahertz emission device, which comprises: a femtosecond laser, a double-layer nano film and a current source; the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and the ferromagnetic layer and the non-ferromagnetic layer are nano films; the femtosecond laser is used for outputting pumping laser and penetrating the double-layer nano film, and radiating a first terahertz pulse from the non-ferromagnetic layer; the current source is used for inputting current to the non-ferromagnetic layer so as to generate spin current on the non-ferromagnetic layer, the spin current induces spin orbit torque to enable the ferromagnetic layer to generate magnetic inversion, and a second terahertz pulse with the polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer.
Preferably, the femtosecond laser is a femtosecond laser oscillator, a femtosecond laser method device or a fiber femtosecond laser, and the pulse width of the pump laser output by the femtosecond laser is less than 1 ps.
Preferably, the material of the non-ferromagnetic layer is a strong spin orbit coupling material, and the strong spin orbit coupling material is a heavy metal material or a topological insulating material; wherein the heavy metal material comprises a combined layer of one or more of Pt, Ta or W; the topological insulating material comprises Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3Or (Bi)xSb1-x)2Te3Any one or an alloy of any one.
Preferably, the material of the ferromagnetic layer comprises a transition metal or a transition metal alloy.
Preferably, the current source is a direct current source or an alternating current source.
On the other hand, the embodiment of the invention also provides a spin terahertz transmission method based on the spin terahertz transmission device, which comprises the following steps: pumping laser penetrates through the double-layer nano film and radiates a first terahertz pulse from the non-ferromagnetic layer, wherein the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and the ferromagnetic layer and the non-ferromagnetic layer are both nano films; a current is input to the non-ferromagnetic layer to generate a spin current in the non-ferromagnetic layer, the spin current induces a spin-orbit torque to magnetically invert the ferromagnetic layer, and a second terahertz pulse having a polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer.
Preferably, the pumping laser penetrates through the double-layer nano-film and radiates a first terahertz pulse from the non-ferromagnetic layer, and further includes: if the pumping laser is incident perpendicular to the ferromagnetic layer and generates a first instantaneous spin current on the ferromagnetic layer, the first instantaneous spin current is converted into a first charge current on the non-ferromagnetic layer, and a first terahertz pulse is radiated from the non-ferromagnetic layer; if the pumping laser is incident perpendicular to the non-ferromagnetic layer and generates a second transient spin current in the ferromagnetic layer, the second transient spin current is converted into a second charge current in the non-ferromagnetic layer, and the second transient spin current and the first terahertz pulse are radiated from the non-ferromagnetic layer.
Preferably, the first transient spin current to the first charge current and the second transient spin current to the second charge current are based on the inverse spin hall effect or the inverse rashbar effect.
Preferably, the input of current to the non-ferromagnetic layer to generate spin current in the non-ferromagnetic layer is based on the spin hall effect or the rashbar effect.
The embodiment of the invention provides a spinning terahertz emission device and a spinning terahertz emission method.A femtosecond laser is used for penetrating pumping laser through a double-layer nano film consisting of a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and radiating a first terahertz pulse from the non-ferromagnetic layer; meanwhile, a current is input to the non-ferromagnetic layer with a current source to generate a spin current in the non-ferromagnetic layer, the spin current induces a spin orbit torque to magnetically invert the ferromagnetic layer, and a second terahertz pulse having a polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer, thereby causing a terahertz pulse having a polarity opposite to that of the originally generated terahertz pulse to be radiated from the non-ferromagnetic layer. The embodiment of the invention can rapidly change the polarity of the radiated terahertz pulse so as to radiate the terahertz pulse with opposite polarity, has simple structure and simple and convenient operation, and is beneficial to the production and application of related terahertz devices.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a spin terahertz transmission device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a ferromagnetic layer according to an embodiment of the present invention before magnetic switching;
FIG. 3 is a schematic diagram of a ferromagnetic layer of an embodiment of the present invention after magnetic switching;
fig. 4 is a schematic flow chart of a spin terahertz transmission method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a spin terahertz transmission device according to an embodiment of the present invention, and as shown in fig. 1, an embodiment of the present invention provides a spin terahertz transmission device, including: a femtosecond laser 1, a double-layer nano film and a current source 2; the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and the ferromagnetic layer and the non-ferromagnetic layer are nano films; the femtosecond laser device 1 is used for outputting pumping laser and penetrating the double-layer nano film, and radiating a first terahertz pulse from the non-ferromagnetic layer; the current source 2 is configured to input a current to the non-ferromagnetic layer to generate a spin current in the non-ferromagnetic layer, the spin current inducing a spin-orbit torque to magnetically invert the ferromagnetic layer, and a second terahertz pulse having a polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer.
It should be noted that in the bilayer nanofilm, the ferromagnetic layer and the non-ferromagnetic layer are in maximum plane contact with each other, that is, the maximum plane of the ferromagnetic layer and the maximum plane of the non-ferromagnetic layer are in parallel contact with each other.
Specifically, a femtosecond laser 1 is used for outputting pumping laser, so that the pumping laser penetrates through a double-layer nano film to generate a first terahertz pulse; meanwhile, a current is input to the non-ferromagnetic layer by the current source 2, a spin current is generated in the non-ferromagnetic layer, the spin current induces a spin orbit torque to act on the ferromagnetic layer and inverts the magnetism of the ferromagnetic layer, and a charge flow with a polarity opposite to that of the initial charge flow is generated in the non-ferromagnetic layer due to the inversion of the magnetism of the ferromagnetic layer, so that the device outputs a second terahertz pulse with a polarity opposite to that of the first terahertz pulse from the non-ferromagnetic layer.
It is noted that the spin-orbit torque is generated in the ferromagnetic layer, and specifically, the non-ferromagnetic layer generates spin current, which induces the spin-orbit torque in the ferromagnetic layer.
It should be noted that the current source 2 inputs a current to the non-ferromagnetic layer in synchronization with the output of the pump laser from the femtosecond laser 1 to penetrate the double-layered nano thin film, or the current source 2 inputs a current to the non-ferromagnetic layer after the output of the pump laser from the femtosecond laser 1 penetrates the double-layered nano thin film.
According to the spinning terahertz transmitting device provided by the embodiment of the invention, current is introduced into the non-ferromagnetic layer of the double-layer nano film by using the current source, so that the magnetism of the ferromagnetic layer is reversed, and a charge flow with the polarity opposite to that of the initial charge flow is generated in the non-ferromagnetic layer, so that the pumping laser emitted by the femtosecond laser penetrates through the double-layer nano film structure of the non-ferromagnetic layer to output terahertz pulses with the polarity opposite to that of the initially generated terahertz pulses. The embodiment of the invention can rapidly change the polarity of the radiated terahertz pulse so as to radiate the terahertz pulse with opposite polarity, has simple structure and simple and convenient operation, and is beneficial to the production and application of related terahertz devices.
The femtosecond laser 1 is a femtosecond laser oscillator, a femtosecond laser method, or a fiber femtosecond laser 1, and the pulse width of the pump laser output by the femtosecond laser 1 is less than 1 ps.
It should be further noted that the non-ferromagnetic layer is made of a strong spin orbit coupling material, and the strong spin orbit coupling material is a heavy metal material or a topological insulating material; wherein the heavy metal material comprises a combined layer of one or more of Pt, Ta or W; the topological insulating material comprises Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3Or (Bi)xSb1-x)2Te3Any one or an alloy of any one.
Further, the material of the ferromagnetic layer includes a transition metal or a transition metal alloy.
Further, the current source 2 is a direct current source or an alternating current source.
Based on the foregoing embodiment, fig. 4 is a schematic flow chart of a spin terahertz transmission method according to an embodiment of the present invention, and as shown in fig. 4, an embodiment of the present invention further provides a spin terahertz transmission method based on the foregoing spin terahertz transmission device, where the method includes: s1, enabling pump laser to penetrate through the double-layer nano film and radiate a first terahertz pulse from the non-ferromagnetic layer, wherein the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are in contact with each other, and the ferromagnetic layer and the non-ferromagnetic layer are both nano films; and S2, inputting current to the non-ferromagnetic layer to generate spin current in the non-ferromagnetic layer, wherein the spin current induces spin orbit torque to enable the ferromagnetic layer to generate magnetic reversal, and a second terahertz pulse with the polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer.
Specifically, fig. 2 is a schematic structural diagram of a ferromagnetic layer before magnetic inversion according to an embodiment of the present invention, fig. 3 is a schematic structural diagram of a ferromagnetic layer after magnetic inversion according to an embodiment of the present invention, and as shown in fig. 2 and fig. 3, a pump laser penetrates through a double-layer nano-film from any direction and radiates a first terahertz pulse from a non-ferromagnetic layer; meanwhile, a current is input to the non-ferromagnetic layer to generate a spin current in the non-ferromagnetic layer, and the spin current induces a spin-orbit torque to flip the magnetism of the ferromagnetic layer, so that a charge flow having a polarity opposite to that of the initial charge flow is generated in the non-ferromagnetic layer, thereby causing the device to output a second terahertz pulse having a polarity opposite to that of the first terahertz pulse.
It should be noted that the current is input to the non-ferromagnetic layer in synchronization with the penetration of the pumping laser through the double-layer nano-film, or the current is input to the non-ferromagnetic layer after the penetration of the pumping laser through the double-layer nano-film.
According to the spin terahertz emission method provided by the embodiment of the invention, the current source 2 is utilized to supply current to the non-ferromagnetic layer of the double-layer nano film, so that the magnetism of the ferromagnetic layer is reversed, the non-ferromagnetic layer generates charge currents with opposite polarities, and the pumping laser emitted by the femtosecond laser 1 penetrates through the double-layer nano film structure of the non-ferromagnetic layer to output terahertz pulses with opposite polarities. The embodiment of the invention can rapidly change the polarity of the radiated terahertz pulse so as to radiate the terahertz pulse with opposite polarity, has simple structure and simple and convenient operation, and is beneficial to the production and application of related terahertz devices.
Based on the above embodiment, as shown in fig. 2, penetrating the pump laser through the double-layer nano film and radiating the first terahertz pulse from the non-ferromagnetic layer further includes: if the pumping laser is incident perpendicular to the ferromagnetic layer and generates a first instantaneous spin current on the ferromagnetic layer, the first instantaneous spin current is converted into a first charge current on the non-ferromagnetic layer, and a first terahertz pulse is radiated from the non-ferromagnetic layer; if the pumping laser is incident perpendicular to the non-ferromagnetic layer and generates a second transient spin current in the ferromagnetic layer, the second transient spin current is converted into a second charge current in the non-ferromagnetic layer, and a first terahertz pulse is radiated from the non-ferromagnetic layer.
Specifically, the first terahertz pulse is radiated from the non-ferromagnetic layer regardless of the incidence of the pump laser light from any direction other than the double-layer nano-film. In general, in order to make the pump laser fully function, the pump laser may be incident perpendicular to the ferromagnetic layer or the non-ferromagnetic layer, for example, if the pump laser is incident perpendicular to the ferromagnetic layer, a first transient spin current is generated in the ferromagnetic layer, the first transient spin current is converted into a first charge current in the non-ferromagnetic layer, and a first terahertz pulse is radiated from the non-ferromagnetic layer; if the pumping laser is incident perpendicular to the non-ferromagnetic layer, the pumping laser directly acts on the ferromagnetic layer through the non-ferromagnetic layer to generate a second instantaneous spin current in the ferromagnetic layer, the second instantaneous spin current is converted into a second charge current in the non-ferromagnetic layer, and a first terahertz pulse is radiated from the non-ferromagnetic layer.
It should be noted that the first transient spin current is converted into the first charge current, and the second transient spin current is converted into the second charge current, which are based on the inverse spin hall effect or the inverse rashbar effect. The conversion of charge flow in the non-ferromagnetic layer into spin flow upon application of current to the non-ferromagnetic layer is based on the spin hall effect or the rashbar effect.
The invention adds the spin Hall effect or the Laishba effect on the basis of the reverse spin Hall effect or the reverse Laishba effect, can quickly change the polarity of the radiated terahertz pulse so as to radiate the terahertz pulse with opposite polarity, has simple structure and simple and convenient operation, can quickly prepare the double-layer nano film consisting of the ferromagnetic layer and the non-ferromagnetic layer which are mutually contacted by utilizing a mature magnetron sputtering system, does not need to adopt a complex micro-nano processing technology for preparing the large-aperture photoconductive antenna to generate the terahertz pulse, and is beneficial to the production and the application of related terahertz devices.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. A spin terahertz transmission device, comprising: a femtosecond laser, a double-layer nano film and a current source;
the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and the ferromagnetic layer and the non-ferromagnetic layer are both nano films;
the femtosecond laser is used for outputting pump laser and penetrating the double-layer nano film, and radiating a first terahertz pulse from the non-ferromagnetic layer;
the current source is used for inputting current to the non-ferromagnetic layer so as to generate spin current in the non-ferromagnetic layer, the spin orbit torque caused by the spin current enables the ferromagnetic layer to be magnetically inverted, and a second terahertz pulse with the polarity opposite to that of the first terahertz pulse is radiated from the non-ferromagnetic layer; the spin orbit torque is generated in a ferromagnetic layer; the non-ferromagnetic layer is made of a strong spin orbit coupling material, and the strong spin orbit coupling material is a heavy metal material or a topological insulating material; the heavy metal material comprises a combined layer of one or more of Pt, Ta or W; the topological insulating material comprises Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3Or (Bi)xSb1-x)2Te3Any one of or an alloy of any one;
wherein the inputting of the current into the non-ferromagnetic layer is performed in synchronization with the output pump laser penetrating the double-layered nano-film, or the inputting of the current into the non-ferromagnetic layer is performed after the output pump laser penetrates the double-layered nano-film.
2. The spin terahertz transmission device of claim 1, wherein the femtosecond laser is a femtosecond laser oscillator, a femtosecond laser amplifier, or a fiber femtosecond laser; the pulse width of the pump laser output by the femtosecond laser is less than 1 ps.
3. The spin terahertz transmission device of claim 1, wherein the material of the ferromagnetic layer comprises a transition metal or a transition metal alloy.
4. The spin terahertz transmission device of claim 1, wherein the current source is a direct current source or an alternating current source.
5. A spin terahertz transmission method is characterized by comprising the following steps:
pumping laser penetrates through the double-layer nano film, and a first terahertz pulse is radiated from the non-ferromagnetic layer; the double-layer nano film comprises a ferromagnetic layer and a non-ferromagnetic layer which are mutually contacted, and the ferromagnetic layer and the non-ferromagnetic layer are both nano films;
inputting a current to the non-ferromagnetic layer to generate a spin current in the non-ferromagnetic layer, the spin-orbit torque induced by the spin current magnetically flipping the ferromagnetic layer, and radiating a second terahertz pulse from the non-ferromagnetic layer with a polarity opposite to that of the first terahertz pulse; the spin orbit torque is generated in a ferromagnetic layer; the non-ferromagnetic layer is made of a strong spin orbit coupling material, and the strong spin orbit coupling material is a heavy metal material or a topological insulating material; the heavy metal material comprises a combined layer of one or more of Pt, Ta or W; the topological insulating material comprises Bi2Se3，Bi2Te3，BixSb1-x，Sb2Te3Or (Bi)xSb1-x)2Te3Any one of or an alloy of any one;
wherein the inputting of the current into the non-ferromagnetic layer is performed in synchronization with the output pump laser penetrating the double-layered nano-film, or the inputting of the current into the non-ferromagnetic layer is performed after the output pump laser penetrates the double-layered nano-film.
6. The spin terahertz transmission method of claim 5, wherein the penetrating the pump laser through the double-layer nano-film and radiating the first terahertz pulse from the non-ferromagnetic layer further comprises:
if the pump laser is incident perpendicular to the ferromagnetic layer and generates a first transient spin current in the ferromagnetic layer, the first transient spin current is converted into a first charge current in the non-ferromagnetic layer and radiates the first terahertz pulse from the non-ferromagnetic layer;
if the pump laser is incident perpendicular to the non-ferromagnetic layer and generates a second transient spin current in the ferromagnetic layer, the second transient spin current is converted into a second charge current in the non-ferromagnetic layer, and the first terahertz pulse is radiated from the non-ferromagnetic layer.
7. The spin terahertz transmission method of claim 6, wherein the first transient spin current to the first charge current and the second transient spin current to the second charge current are based on an inverse spin Hall effect or an inverse Ralshbar effect.
8. The spin terahertz transmission method according to claim 7, wherein the inputting of the current to the non-ferromagnetic layer to generate the spin current in the non-ferromagnetic layer is based on a spin hall effect or a rashbar effect.
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| CN110687070B (en) * | 2019-10-17 | 2022-03-01 | 赫智科技(苏州)有限公司 | High-resolution terahertz signal transmitting and collecting method based on optical fiber |
| CN112510469B (en) * | 2020-09-27 | 2022-04-12 | 北京航空航天大学 | Polarization tunable terahertz radiation source based on spin emission and linearly polarized light current |
| CN112103756B (en) * | 2020-10-12 | 2023-04-07 | 北京航空航天大学合肥创新研究院 | Spin terahertz transmitter with controllable polarization direction |
| EP4030231A1 (en) * | 2021-01-14 | 2022-07-20 | Martin-Luther-Universität Halle-Wittenberg | Spintronic component |
| CN113922192A (en) * | 2021-08-25 | 2022-01-11 | 北京航空航天大学 | Full van der Waals spinning terahertz transmitter and method for regulating intensity and polarity of terahertz waves |
| US11817242B2 (en) * | 2021-11-17 | 2023-11-14 | Wisconsin Alumni Research Foundation | Magnonic electromagnetic radiation sources with high output power at high frequencies |
| CN116546875A (en) * | 2023-04-23 | 2023-08-04 | 西安电子科技大学 | Direct current driven high-power spin oscillator and preparation process thereof |
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| CN105914564B (en) * | 2016-06-14 | 2019-01-25 | 西南交通大学 | A kind of high-intensity broadband THz wave generator |
| CN109478577A (en) * | 2016-07-20 | 2019-03-15 | 新加坡国立大学 | Terahertz emission transmitter |
| CN108023263B (en) * | 2017-11-20 | 2020-03-10 | 中国工程物理研究院电子工程研究所 | Terahertz pulse generator for regulating and controlling magnetic field and voltage |
| CN108594481A (en) * | 2018-06-05 | 2018-09-28 | 北京航空航天大学 | The THz wave transmitter of magnetic control polarization state |
| CN109672071A (en) * | 2019-01-03 | 2019-04-23 | 北京航空航天大学 | A kind of production method of spin terahertz transmitter and THz wave |
| CN109830874B (en) * | 2019-04-08 | 2024-05-07 | 北京航空航天大学 | Spintronic terahertz wave emitter based on voltage control magnetization |
| CN110010637B (en) * | 2019-04-12 | 2021-05-07 | 中国科学院半导体研究所 | Spin orbit torque magnetic resistance type random access memory and preparation method thereof |
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| WO2022223527A1 (en) * | 2021-04-23 | 2022-10-27 | Freie Universität Berlin | Spintronic terahertz emitter |
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