CN109664199A - A kind of optimization method and device of chemically mechanical polishing - Google Patents

A kind of optimization method and device of chemically mechanical polishing Download PDF

Info

Publication number
CN109664199A
CN109664199A CN201910027830.6A CN201910027830A CN109664199A CN 109664199 A CN109664199 A CN 109664199A CN 201910027830 A CN201910027830 A CN 201910027830A CN 109664199 A CN109664199 A CN 109664199A
Authority
CN
China
Prior art keywords
pattern piece
polishing
piece
light barrier
control light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910027830.6A
Other languages
Chinese (zh)
Other versions
CN109664199B (en
Inventor
张康
李婷
蒋锡兵
王栋
赵雪峰
张连伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Jingyi Precision Technology Co.,Ltd.
Original Assignee
Beijing Semiconductor Equipment Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Semiconductor Equipment Institute filed Critical Beijing Semiconductor Equipment Institute
Priority to CN201910027830.6A priority Critical patent/CN109664199B/en
Publication of CN109664199A publication Critical patent/CN109664199A/en
Application granted granted Critical
Publication of CN109664199B publication Critical patent/CN109664199B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention provides a kind of optimization method of chemically mechanical polishing, this method predicts the budget offset and polishing time of (n+1)th pattern piece according to the changeable weight factor of n-th pattern piece, practical removal amount, prediction polishing speed, polishing time and predictive compensation value, and the budget offset and polishing time that are obtained according to prediction chemically-mechanicapolish polish (n+1)th pattern piece.Wherein, the changeable weight factor of n-th pattern piece is related with the life cycle influence factor of consumptive material used is polished, so that this method can effectively increase the precision of polishing time algorithm with on-line optimization polishing time Algorithm Error as caused by the polishing speed difference under polishing consumptive material difference life cycle.

Description

A kind of optimization method and device of chemically mechanical polishing
Technical field
The present invention relates to manufacture of semiconductor technology fields, in particular to a kind of optimization of chemically mechanical polishing Method and device.
Background technique
With the development of Moore's Law, (Chemical is chemically-mechanicapolish polished in semiconductor manufacturing process Mechanical Planarization, CMP) effect it is more and more important, also increasingly to the control accuracy requirement of CMP processing procedure It is high.The prediction of the polishing time or polishing speed of wafer (Wafer To Wafer, WTW) usually passes through advanced mistake between existing Process control (Advanced Process Control, APC) system is calculated, and an online measuring module is added.But Firstly, APC system is not merely directed to CMP processing procedure, but numerous processing procedures in integrated circuit fabrication process are taken into account, shared a variety of Parameter and computation model；Secondly, film thickness measurement request of the existing online measuring module suitable for different processing procedures.Therefore, it provides Although WTW polishing time or polishing speed prediction model and concept versatility it is relatively strong, be suitable for a variety of processing procedures, be directed to The specific aim Shortcomings of CMP concrete technology feature.
Summary of the invention
The present invention provides a kind of optimization method and device of chemically mechanical polishing, to solve to be directed to CMP concrete technology feature Specific aim Shortcomings the problem of.
To achieve the goals above, technical solution provided by the embodiment of the present invention is as follows:
In a first aspect, the embodiment of the present invention provides a kind of optimization method of chemically mechanical polishing, comprising: according to n-th The polishing time u of pattern piecenIt is thick according to the pattern piece before polishing after being chemically-mechanicapolish polished to n-th pattern piece The practical removal amount Y of n-th pattern piece described in pattern piece THICKNESS CALCULATION after degree and polishingn；Wherein, n is whole not less than 1 Number；According to the polishing time u of n-th pattern piecen, n-th pattern piece predictive compensation valueAnd it is described The prediction removal amount of n-th pattern pieceCalculate the prediction polishing speed b of n-th pattern piecen；Schemed according to described n-th The changeable weight factor lambda of shape piecen, n-th pattern piece the practical removal amount Yn, n-th pattern piece it is described pre- Survey polishing speed bn, n-th pattern piece the polishing time unAnd the predictive compensation of n-th pattern piece ValueCalculate the predictive compensation value of (n+1)th pattern pieceWherein, the changeable weight factor of n-th pattern piece λnIt is determined by the expection remaining life impact factor of consumptive material；According to the prediction polishing speed b of n-th pattern piecen, institute State the object removal amount T of (n+1)th pattern piecen+1And the predictive compensation value of (n+1)th pattern pieceIt calculates The polishing time u of (n+1)th pattern piecen+1.Therefore, according to the changeable weight factor of n-th pattern piece, practical removal amount, Predict that polishing speed, polishing time and predictive compensation value predict the budget offset and polishing time of (n+1)th pattern piece, And the budget offset and polishing time obtained according to prediction chemically-mechanicapolish polishes (n+1)th pattern piece.Wherein, The changeable weight factor of n piece pattern piece is related with the life cycle influence factor of consumptive material used is polished, and this method is existed Line optimization polishing time Algorithm Error as caused by the polishing speed difference under polishing consumptive material difference life cycle, effectively improves The precision of polishing time algorithm.
In alternative embodiment of the invention, the prediction removal amount of n-th pattern pieceIt is described (n-1)th The practical removal amount Y of pattern piecen-1；Wherein, n is the integer greater than 1.It therefore, can be by the practical removal of (n-1)th pattern piece Amount is defaulted as the prediction removal amount of n-th pattern piece, for predicting the prediction polishing speed of n-th pattern piece, thus in advance Survey the budget offset and polishing time of (n+1)th pattern piece.
In alternative embodiment of the invention, in the polishing time u according to the 1st pattern piece1Described 1st is schemed Before shape piece is chemically-mechanicapolish polished, the method also includes: according to default changeable weight factor lambda0, preset practical removal amount Y0, default polishing speed b0, default first polishing time u0And predesigned compensation valueCalculate the prediction of the 1st pattern piece OffsetAccording to the default polishing speed b0, the 1st pattern piece object removal amount T1And the 1st figure The predictive compensation value of shape pieceCalculate the polishing time u of the 1st pattern piece1.Therefore, according to default changeable weight because Son, default practical removal amount, default polishing speed, default first polishing time and predesigned compensation value predict the 1st pattern piece Predictive compensation value and polishing time so that subsequent pattern piece can be carried out according to the polishing data of the 1st pattern piece it is pre- It surveys and optimizes.
In alternative embodiment of the invention, changeable weight factor lambda is preset in the basis0, preset practical removal amount Y0、 Default polishing speed b0, default first polishing time u0And predesigned compensation valueCalculate the predictive compensation value of the 1st pattern pieceBefore, the method also includes: in the polishing time u ' according to t piece control light barriertThe t piece control light barrier is carried out After chemically mechanical polishing, according to t described in the control light barrier thickness before polishing and the control light barrier THICKNESS CALCULATION after polishing The practical removal amount Y ' of piece control light barriert；Wherein, t is the integer greater than 1, and control light barrier is identical as pattern piece surfacing；Root According to the polishing time u ' of the t piece control light barriert, the t piece control light barrier predictive compensation valueAnd it is described The prediction removal amount of t piece control light barrierCalculate the prediction polishing speed b ' of the t piece control light barriert；According to the t The changeable weight factor lambda of piece control light barrier 't, the t piece control light barrier the practical removal amount Y 't, t piece control gear The prediction polishing speed b ' of mating platet, the t piece control light barrier the polishing time u 'tAnd the t piece control gear The predictive compensation value of mating plateCalculate the predictive compensation value of t+1 piece control light barrierWherein, the t piece control gear The changeable weight factor lambda of mating plate 'tIt is determined by the expected remaining life impact factor of the consumptive material；According to the t The prediction polishing speed b ' of piece control light barriert, t+1 piece control light barrier object removal amount T 't+1And the t+1 The predictive compensation value of piece control light barrierCalculate the polishing time u ' of the t piece control light barriert+1.Therefore, it is used for It predicts the default changeable weight factor of the polishing data of the 1st pattern piece, default practical removal amount, default polishing speed, preset First polishing time and predesigned compensation value can pass through the polishing data of t piece control light barrier identical with pattern piece surfacing It determines, be modified the 1st pattern piece can according to predictive compensation value in polishing.
In alternative embodiment of the invention, in the polishing time u ' for controlling light barrier according to the 2nd2To the described 2nd Before piece control light barrier is chemically-mechanicapolish polished, the method also includes: according to default second polishing time u '1To the 1st After piece control light barrier is chemically-mechanicapolish polished, according to the 1st control light barrier thickness before polishing and the 1st after polishing Control the practical removal amount Y ' of the 1st pattern piece described in light barrier THICKNESS CALCULATION1；The throwing of light barrier is controlled according to described 1st U ' between light time1And the practical removal amount Y ' of the 1st control light barrier1Calculate the practical throwing of the 1st control light barrier Optical speed β '1；According to described 1st control light barrier changeable weight factor lambda '1, the 1st control the described of light barrier actually go Except amount Y '1, it is described 1st control light barrier the practical polishing speed β '1And the polishing of the 1st control light barrier Time u '1Calculate the predictive compensation value of the 2nd control light barrierWherein, it is described 1st control light barrier the changeable weight because Sub- λ '1It is determined by the expected remaining life impact factor of the consumptive material；The reality of light barrier is controlled according to described 1st Polishing speed β '1, the 2nd piece control light barrier object removal amount T '2And the predictive compensation value of the 2nd control light barrierCalculate the polishing time u ' of the 2nd control light barrier2.Therefore, because there is no wafer right before the 1st control light barrier Its polishing data are predicted, can be preset a polishing time, be polished, obtained with the polishing time of setting Polishing speed, the changeable weight factor, practical removal amount etc. polish data for the prediction and optimization to subsequent wafer.
In alternative embodiment of the invention, the polishing time u according to n-th pattern piecen, described The predictive compensation value of n piece pattern pieceAnd the prediction removal amount of n-th pattern pieceCalculate n-th pattern piece Prediction polishing speed bn, comprising: the prediction polishing speed b of n-th pattern piece is calculated according to the following formulan:
Therefore, the prediction polishing speed of n-th pattern piece can polishing time, predictive compensation according to n-th pattern piece Value and prediction removal amount are predicted to obtain.
In alternative embodiment of the invention, the changeable weight factor lambda according to n-th pattern piecen, described The practical removal amount Y of n piece pattern piecen, n-th pattern piece the prediction polishing speed bn, n-th figure The polishing time u of piecenAnd the predictive compensation value of n-th pattern pieceCalculate the pre- of (n+1)th pattern piece Survey offsetIt include: the predictive compensation value for calculating (n+1)th pattern piece according to the following formula
Therefore, the predictive compensation value of (n+1)th pattern piece can according to the changeable weight factor of n-th pattern piece, Practical removal amount, prediction polishing speed, polishing time and predictive compensation value are predicted to obtain.
In alternative embodiment of the invention, the changeable weight factor lambda of n-th pattern piecenAre as follows:
λn=δ+| 1-2 δ | γn；
Wherein, δ is basic weight coefficient, | 1-2 δ | for the error of n-th pattern piece and the difference of accumulated error weight Value；γnFor the remaining life impact factor of the consumptive material.Therefore, the changeable weight factor of n-th pattern piece can be by setting in advance The remaining life impact factor of fixed basic weight coefficient and consumptive material determines.
In alternative embodiment of the invention, the remaining life impact factor γ of the consumptive materialnAre as follows:
Wherein, ωp,ωd,ωhThe accounting coefficient of grinding pad, diamond disk and grinding head in the respectively described consumptive material,For the expection remaining life impact factor of the grinding pad,For the expection remaining life shadow of the diamond disk The factor is rung,For the expection remaining life impact factor of the grinding head.Therefore, the remaining life impact factor of consumptive material It can be determined by the expection remaining life impact factor of grinding pad, diamond disk and grinding head in consumptive material.
In alternative embodiment of the invention, the expected remaining life impact factor of the grinding padAre as follows:
Wherein,For the life expectancy of the grinding pad；It is the grinding pad after the completion of i-th pattern piece polishes Service life；T is the number of the grinding pad.Therefore, the desired remaining life impact factor of grinding pad can be by grinding The life expectancy of pad and accumulative service life determine.
In alternative embodiment of the invention, the expected remaining life impact factor of the diamond disk Are as follows:
Wherein,For the life expectancy of the diamond disk；It is polished for the diamond disk in i-th pattern piece Service life after the completion；T is the number of the diamond disk.Therefore, the desired remaining life impact factor of diamond disk It can be determined by the life expectancy and accumulative service life of diamond disk.
In alternative embodiment of the invention, the expected remaining life impact factor of the grinding headAre as follows:
Wherein,For the life expectancy of the grinding head；It is completed for the grinding head in i-th pattern piece polishing Service life afterwards.Therefore, the desired remaining life impact factor of grinding head can be by the life expectancy of grinding head and tired Service life is counted to determine.
In alternative embodiment of the invention, the prediction polishing speed b according to n-th pattern piecen, institute State the object removal amount T of (n+1)th pattern piecen+1And the predictive compensation value of (n+1)th pattern pieceIt calculates The polishing time u of (n+1)th pattern piecen+1, comprising: the throwing of (n+1)th pattern piece is calculated according to the following formula U between light timen+1:
Therefore, the polishing time of (n+1)th pattern piece can be according to the prediction polishing speed of n-th pattern piece, (n+1)th The predictive compensation value of the object removal amount of pattern piece and (n+1)th pattern piece is predicted to obtain.
In alternative embodiment of the invention, the polishing time u ' that light barrier is controlled according to described 1st1And The practical removal amount Y ' of the 1st control light barrier1Calculate the practical polishing speed β ' of the 1st control light barrier1, packet It includes: calculating the practical polishing speed β ' of the 1st control light barrier according to the following formula1:
Therefore, the practical polishing speed of the 1st control light barrier can control the polishing time and reality of light barrier according to the 1st Border removal amount is predicted to obtain.
Second aspect, the embodiment of the present invention provide a kind of optimization device of chemically mechanical polishing, comprising: first calculates mould Block, in the polishing time u according to n-th pattern piecenAfter being chemically-mechanicapolish polished to n-th pattern piece, root According to the practical removal amount Y of n-th pattern piece described in the pattern piece thickness before polishing and the pattern piece THICKNESS CALCULATION after polishingn； Wherein, n is the integer not less than 1；Second computing module, for the polishing time u according to n-th pattern piecen, institute State the predictive compensation value of n-th pattern pieceAnd the prediction removal amount of n-th pattern pieceCalculate n-th figure The prediction polishing speed b of shape piecen；Third computing module, for the changeable weight factor lambda according to n-th pattern piecen, it is described The practical removal amount Y of n-th pattern piecen, n-th pattern piece the prediction polishing speed bn, it is described n-th figure The polishing time u of shape piecenAnd the predictive compensation value of n-th pattern pieceCalculate (n+1)th pattern piece Predictive compensation valueWherein, the changeable weight factor lambda of n-th pattern piecenBy the expection remaining life shadow of consumptive material The factor is rung to determine；4th computing module, for the prediction polishing speed b according to n-th pattern piecen, described (n+1)th The object removal amount T of piece pattern piecen+1And the predictive compensation value of (n+1)th pattern pieceCalculate described n-th+ The polishing time u of 1 pattern piecen+1.Therefore, it is polished according to the changeable weight factor of n-th pattern piece, practical removal amount, prediction Rate, polishing time and predictive compensation value predict the budget offset and polishing time of (n+1)th pattern piece, and according to pre- The budget offset and polishing time measured chemically-mechanicapolish polishes (n+1)th pattern piece.Wherein, n-th figure The changeable weight factor of piece is related with the life cycle influence factor of consumptive material used is polished so that the device can with on-line optimization by In polishing polishing time Algorithm Error caused by the polishing speed difference under consumptive material difference life cycle, when effectively increasing polishing Between algorithm precision.
In alternative embodiment of the invention, described device further include: the 5th computing module, for being weighed according to default dynamic Repeated factor λ0, preset practical removal amount Y0, default polishing speed b0, default first polishing time u0And predesigned compensation valueMeter Calculate the predictive compensation value of the 1st pattern piece6th computing module, for according to the default polishing speed b0, it is described The object removal amount T of 1st pattern piece1And the predictive compensation value of the 1st pattern pieceCalculate the 1st figure The polishing time u of shape piece1.Therefore, according to the default changeable weight factor, default practical removal amount, default polishing speed, preset the One polishing time and predesigned compensation value predict the predictive compensation value and polishing time of the 1st pattern piece, so that subsequent figure Shape piece can be predicted and be optimized according to the polishing data of the 1st pattern piece.
In alternative embodiment of the invention, described device further include: the 7th computing module, for according to t piece control The polishing time u ' of light barriertIt is light-blocking according to the control before polishing after being chemically-mechanicapolish polished to the t piece control light barrier The practical removal amount Y ' of t piece control light barrier described in control light barrier THICKNESS CALCULATION after piece thickness and polishingt；Wherein, t is big In 1 integer, it is identical as pattern piece surfacing to control light barrier；8th computing module, for according to the t piece control light barrier The polishing time u 't, the t piece control light barrier predictive compensation valueAnd the prediction of the t piece control light barrier Removal amountCalculate the prediction polishing speed b ' of the t piece control light barriert；9th computing module, for according to the t piece The changeable weight factor lambda of control light barrier 't, the t piece control light barrier the practical removal amount Y 't, the t piece control it is light-blocking The prediction polishing speed b ' of piecet, the t piece control light barrier the polishing time u 'tAnd the t piece control is light-blocking The predictive compensation value of pieceCalculate the predictive compensation value of t+1 piece control light barrierWherein, the t piece control is light-blocking The changeable weight factor lambda of piece 'tIt is determined by the expected remaining life impact factor of the consumptive material；Tenth computing module, For the prediction polishing speed b ' according to the t piece control light barriert, t+1 piece control light barrier object removal amount T′t+1And the predictive compensation value of the t+1 piece control light barrierWhen calculating the polishing of the t piece control light barrier Between u 't+1.Therefore, for predicting the default changeable weight factor of the polishing data of the 1st pattern piece, presetting practical removal amount, pre- If polishing speed, default first polishing time and predesigned compensation value can pass through t piece and the identical control of pattern piece surfacing The polishing data of light barrier determine, be modified the 1st pattern piece can according to predictive compensation value in polishing.
In alternative embodiment of the invention, described device further include: the 11st computing module, for according to default the Two polishing time u '1It is thick according to the 1st control light barrier before polishing after being chemically-mechanicapolish polished to the 1st control light barrier The practical removal amount Y ' of 1st pattern piece described in the 1st control light barrier THICKNESS CALCULATION after degree and polishing1；12nd calculates Module, for controlling the polishing time u ' of light barrier according to described 1st1And the reality of the 1st control light barrier Border removal amount Y '1Calculate the practical polishing speed β ' of the 1st control light barrier1；13rd computing module, for according to The changeable weight factor lambda of 1st control light barrier '1, it is described 1st control light barrier the practical removal amount Y '1, it is 1st described Control the practical polishing speed β ' of light barrier1And the polishing time u ' of the 1st control light barrier1Calculate the 2nd control The predictive compensation value of light barrierWherein, it is described 1st control light barrier the changeable weight factor lambda '1By the consumptive material The expected remaining life impact factor determines；14th computing module, for controlling the reality of light barrier according to described 1st Border polishing speed β '1, the 2nd piece control light barrier object removal amount T '2And the predictive compensation of the 2nd control light barrier ValueCalculate the polishing time u ' of the 2nd control light barrier2.Therefore, because there is no wafer can be with before the 1st control light barrier Its polishing data are predicted, a polishing time can be preset, polished, obtained with the polishing time of setting The polishing data such as polishing speed, the changeable weight factor, practical removal amount for the prediction and optimization to subsequent wafer.
The third aspect, the embodiment of the present invention provide a kind of electronic equipment, comprising: processor, memory and bus, it is described Memory is stored with the executable machine readable instructions of the processor, when electronic equipment operation, the processor with By bus communication between the memory, executes in first aspect and appoint when the machine readable instructions are executed by the processor Method described in one.
Fourth aspect, the embodiment of the present invention provide a kind of computer readable storage medium, the computer readable storage medium On be stored with computer program, when which is run by processor execute any optional implementation of first aspect in Any method.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, the embodiment of the present invention is cited below particularly, and match Appended attached drawing is closed, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached Figure is briefly described.It should be appreciated that the following drawings illustrates only certain embodiments of the present invention, therefore it is not construed as pair The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this A little attached drawings obtain other relevant attached drawings.
Fig. 1 is a kind of flow chart of the optimization method of chemically mechanical polishing provided in an embodiment of the present invention；
Fig. 2 is the flow chart of the optimization method of another chemically mechanical polishing provided in an embodiment of the present invention；
Fig. 3 is the flow chart of the optimization method of another chemically mechanical polishing provided in an embodiment of the present invention；
Fig. 4 is the flow chart of the optimization method of another chemically mechanical polishing provided in an embodiment of the present invention；
Fig. 5 is a kind of flow chart of the optimization device of chemically mechanical polishing provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description.Obviously, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is logical The component for the embodiment of the present invention being often described and illustrated herein in the accompanying drawings can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " in ", "upper", "lower", "horizontal", "inner", "outside" etc. refer to The orientation or positional relationship shown is to be based on the orientation or positional relationship shown in the drawings or when invention product use usually puts The orientation or positional relationship put, is merely for convenience of description of the present invention and simplification of the description, rather than the dress of indication or suggestion meaning It sets or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as to limit of the invention System.In addition, term " first ", " second " etc. are only used for distinguishing description, it is not understood to indicate or imply relative importance.
In addition, the terms such as term "horizontal", "vertical" are not offered as requiring component abswolute level or pendency, but can be slightly Low dip.It is not to indicate that the structure has been had to if "horizontal" only refers to that its direction is more horizontal with respect to for "vertical" It is complete horizontal, but can be slightly tilted.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " setting ", " phase Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected.It can To be mechanical connection, it is also possible to be electrically connected.It can be directly connected, can also indirectly connected through an intermediary, it can be with It is the connection inside two elements.For the ordinary skill in the art, it can understand that above-mentioned term exists with concrete condition Concrete meaning in the present invention.
With reference to the accompanying drawing, it elaborates to some embodiments of the present invention.In the absence of conflict, following Feature in embodiment and embodiment can be combined with each other.
First embodiment
The embodiment of the present invention provides a kind of optimization method of chemically mechanical polishing, please refers to Fig. 1, and Fig. 1 is that the present invention is implemented A kind of flow chart of the optimization method for chemically mechanical polishing that example provides, this method comprises the following steps:
Step S110: in the polishing time u according to n-th pattern piecenChemical machinery throwing is carried out to n-th pattern piece After light, according to the reality of n-th pattern piece described in the pattern piece thickness before polishing and the pattern piece THICKNESS CALCULATION after polishing Removal amount Yn。
Step S120: according to the polishing time u of n-th pattern piecen, n-th pattern piece prediction mend Repay valueAnd the prediction removal amount of n-th pattern pieceCalculate the prediction polishing speed b of n-th pattern piecen。
Step S130: according to the changeable weight factor lambda of n-th pattern piecen, n-th pattern piece the reality Border removal amount Yn, n-th pattern piece the prediction polishing speed bn, n-th pattern piece the polishing time un And the predictive compensation value of n-th pattern pieceCalculate the predictive compensation value of (n+1)th pattern piece
Step S140: according to the prediction polishing speed b of n-th pattern piecen, (n+1)th pattern piece Object removal amount Tn+1And the predictive compensation value of (n+1)th pattern pieceCalculate (n+1)th pattern piece Polishing time un+1。
Specifically, in wafer manufacture, with the diminution of the upgrading of process technique, conducting wire and grid size, photoetching technique Requirement to the planarization of crystal column surface is higher and higher, and chemically-mechanicapolish polishes (Chemical Mechanical Planarization, CMP) it is that chemical attack effect and mechanical removal act on the processing technology combined, it is to be machined at present In uniquely may be implemented surface global planarization technology.The optimization method of chemically mechanical polishing provided in an embodiment of the present invention, It is to improve the precision of chemically mechanical polishing in the case where considering the consumptive material life-span cycle influences factor for being polished.
For every (Wafer To Wafer) wafer, optimize since the 2nd pattern piece (pattern wafer), it is excellent Change process is specific as follows: firstly, being polished according to polishing time to the 1st pattern piece, wherein the polishing of the 1st pattern piece Time can determine in several ways, such as: according to the empirically determined, true according to pervious polishing time data of operator Determine, be calculated according to certain calculation formula.After the completion of polishing to the 1st pattern piece, the thickness of the pattern piece is measured, And the thickness of the pattern piece before polishing is subtracted with the thickness of the pattern piece after the polishing, to obtain actually going for the 1st pattern piece Except amount.
Then, the 1st figure is calculated according to the polishing time of the 1st pattern piece, predictive compensation value and prediction removal amount The prediction polishing speed of shape piece, calculation formula are as follows:
Wherein, the polishing time of the 1st pattern piece has determined in the previous step；The predictive compensation of 1st pattern piece Value and prediction removal amount can determine in several ways, such as: according to operator it is empirically determined, according to pervious Polishing compensation Value Data is determining, is calculated according to certain calculation formula.
Then, according to the changeable weight factor of the 1st pattern piece, practical removal amount, prediction polishing speed, polishing time with And predictive compensation value calculates the predictive compensation value of the 2nd pattern piece, calculation formula is as follows:
Wherein, the practical removal amount of the 1st pattern piece, prediction polishing speed, polishing time and predictive compensation value are upper It states in step and has determined；The changeable weight factor of 1st pattern piece is determined by the expection remaining life impact factor of consumptive material. It should be noted that above-mentioned consumptive material is the equipment in chemical mechanical polishing manufacture procedure for grinding, it can be with chemically mechanical polishing The loss for having certain is carried out, is generally comprised: lapping liquid (Slurry), grinding pad (Pad), diamond disk (Disk), grinding head (Head), cleaning brush (Brush) and chemical and protective agent (Chemical).It is primarily upon and grinds in the embodiment of the present invention The influence of mill pad (Pad), diamond disk (Disk) and grinding head (Head) to polishing precision.
The changeable weight factor of above-mentioned 1st pattern piece is specifically as follows:
λ1=δ+| 1-2 δ | γ1,
Wherein, δ is basic weight coefficient, meets 0 < δ < 1, can be by operator's sets itself；| 1-2 δ | for the 1st figure The error of shape piece and the difference of accumulated error weight；γ1For the remaining life impact factor of the consumptive material, it is specifically as follows:
Wherein, ωp,ωd,ωhThe accounting coefficient of grinding pad, diamond disk and grinding head respectively in consumptive material, and meet ωp+ωd+ωh=1, under normal circumstances, ωp>ωd>ωh；It is pre- after the completion of the 1st pattern piece polishes for grinding pad Phase remaining life impact factor,The expection remaining life for being diamond disk after the completion of the 1st pattern piece polishes influences The factor,For expection remaining life impact factor of grinding head after the completion of the 1st pattern piece polishes.It needs to illustrate It is above-mentioned ωp,ωd,ωhIt can rule of thumb be set by operator；It can pass through Various ways are determining, such as: according to the empirically determined, determining according to pervious data, public according to certain calculating of operator Formula is calculated.
For example, expection remaining life impact factor of grinding pad after the completion of the 1st pattern piece polishes specifically can be with Are as follows:
Wherein,For the life expectancy of grinding pad,For use of grinding pad after the completion of the 1st pattern piece polishes In the service life, the number of grinding pad electricity is 3 at this time.Similarly, expected remaining longevity of diamond disk after the completion of the 1st pattern piece polishes Life impact factor is specifically as follows:
Wherein,For the life expectancy of diamond disk,For diamond disk after the completion of the 1st pattern piece polishes Service life, at this point, the number of diamond disk is 3.Expection remaining life of grinding head after the completion of the 1st pattern piece polishes Impact factor is specifically as follows:
Wherein,For the life expectancy of grinding head,For use of grinding head after the completion of first pattern piece polishes Service life, at this point, pattern piece only corresponds to a rubbing head during polishing.
Then, after the predictive compensation value that the 2nd pattern piece is calculated, speed is polished according to the prediction of the 1st pattern piece The object removal amount of rate and the 2nd pattern piece, predictive compensation value calculate the polishing time of the 2nd pattern piece, and calculation formula is such as Under:
Wherein, the prediction polishing speed of the 1st pattern piece and the predictive compensation value of the 2nd pattern piece are in above-mentioned steps It has been determined that the object removal amount of the 2nd pattern piece can be set according to actual needs by operator.
After the polishing time for obtaining the 2nd pattern piece, step S110- step S140 is repeated to the 3rd pattern piece, the 4 pattern pieces ..., n-th pattern piece optimizes, specific optimization process and the above-mentioned optimization process to the 2nd pattern piece It is similar:
Firstly, being polished according to the polishing time being calculated in above-mentioned steps to n-th pattern piece.To n-th After the completion of pattern piece polishing, the thickness of the pattern piece is measured, and subtract the figure before polishing with the thickness of the pattern piece after the polishing The thickness of shape piece, to obtain the practical removal amount of the n-th wafer.
Then, this n-th figure is calculated according to the polishing time of n-th pattern piece, predictive compensation value and prediction removal amount The prediction polishing speed of shape piece, calculation formula are as follows:
Wherein, the polishing time of n-th pattern piece and predictive compensation value have determined in above-mentioned steps；It can incite somebody to action The practical removal amount of (n-1)th pattern piece is considered as n-th pattern piece prediction removal amount.
Then, according to the changeable weight factor of n-th pattern piece, practical removal amount, prediction polishing speed, polishing time with And predictive compensation value calculates the predictive compensation value of (n+1)th pattern piece, calculation formula is as follows:
Wherein, the practical removal amount of n-th pattern piece, prediction polishing speed, polishing time and predictive compensation value are upper It states in step and has determined；The changeable weight factor of n-th pattern piece is determined by the expection remaining life impact factor of consumptive material.
The changeable weight factor of above-mentioned n-th pattern piece is specifically as follows:
λn=δ+| 1-2 δ | γn,
Wherein, δ is basic weight coefficient, meets 0 < δ < 1, can be by operator's sets itself；| 1-2 δ | for n-th figure The error of shape piece and the difference of accumulated error weight；γnFor the remaining life impact factor of consumptive material, it is specifically as follows:
Wherein, ωp,ωd,ωhThe accounting coefficient of grinding pad, diamond disk and grinding head respectively in consumptive material, and meet ωp+ωd+ωh=1, under normal circumstances, ωp>ωd>ωh；It is pre- after the completion of n-th pattern piece polishes for grinding pad Phase remaining life impact factor,The expection remaining life for being diamond disk after the completion of n-th pattern piece polishes influences The factor,The expection remaining life impact factor for being grinding head after the completion of n-th pattern piece polishes.
For example, expection remaining life impact factor of grinding pad after the completion of n-th pattern piece polishes specifically can be with Are as follows:
Wherein,For the life expectancy of grinding pad,For use of grinding pad after the completion of n-th pattern piece polishes Service life, t are the number of grinding pad.Similarly, expection remaining life of diamond disk after the completion of n-th pattern piece polishes influence because Son is specifically as follows:
Wherein,For the life expectancy of diamond disk,For diamond disk after the completion of n-th pattern piece polishes Service life, t are the number of diamond disk.Similarly, expection remaining life shadow of grinding head after the completion of n-th pattern piece polishes The factor is rung to be specifically as follows:
Wherein,For the life expectancy of grinding head,For use of grinding head after the completion of n-th pattern piece polishes Service life.
Then, after the predictive compensation value that n-th pattern piece is calculated, speed is polished according to the prediction of n-th pattern piece The object removal amount of rate and (n+1)th pattern piece, predictive compensation value calculate the polishing time of (n+1)th pattern piece, calculate public Formula is as follows:
Wherein, the prediction polishing speed of n-th pattern piece and the predictive compensation value of (n+1)th pattern piece are in above-mentioned steps In it has been determined that the object removal amount of (n+1)th pattern piece can be set according to actual needs by operator.
It should be noted that the optimization method of the chemically mechanical polishing not only can be in every (Wafer To Wafer) crystalline substance Implement in circle, can also implement in every batch of (Lot To Lot) wafer, can be adjusted according to the actual situation.On in addition, Stating step S110- step S140 can realize in the electronic device, may include a measurement module in electronic equipment, be used for It is online to obtain crystal column surface film thickness in real time, to complete whole processes of the optimization method of chemically mechanical polishing.
In embodiments of the present invention, according to the changeable weight factor of n-th pattern piece, practical removal amount, prediction polishing speed Rate, polishing time and predictive compensation value predict the budget offset and polishing time of (n+1)th pattern piece, and according to prediction Obtained budget offset and polishing time chemically-mechanicapolish polishes (n+1)th pattern piece.Wherein, n-th pattern piece The changeable weight factor it is related with the life cycle influence factor of consumptive material used is polished so that this method can with on-line optimization due to Polishing time Algorithm Error caused by the polishing speed difference under consumptive material difference life cycle is polished, polishing time is effectively increased The precision of algorithm.
Further, referring to figure 2., Fig. 2 is the optimization side of another chemically mechanical polishing provided in an embodiment of the present invention The flow chart of method, as n=1, before step S110, this method further includes following steps:
Step S210: according to default changeable weight factor lambda0, preset practical removal amount Y0, default polishing speed b0, default the One polishing time u0And predesigned compensation valueCalculate the predictive compensation value of the 1st pattern piece
Step S220: according to the default polishing speed b0, the 1st pattern piece object removal amount T1And it is described The predictive compensation value of 1st pattern pieceCalculate the polishing time u of the 1st pattern piece1。
Specifically, the polishing time of the 1st pattern piece can be calculated according to certain calculation formula, detailed process is such as Under:
Firstly, when according to the default changeable weight factor, default practical removal amount, default polishing speed, default first polishing Between and predesigned compensation value calculate the predictive compensation value of the 1st pattern piece, calculation formula is as follows:
Wherein, preset the changeable weight factor, default practical removal amount, default polishing speed, preset the first polishing time with And predesigned compensation value can determine in several ways, and such as: according to the empirically determined, true according to pervious data of operator Determine, be calculated according to certain calculation formula.
Then, described the is calculated according to default polishing speed, the object removal amount of the 1st pattern piece and predictive compensation value The polishing time of 1 pattern piece, calculation formula are as follows:
In embodiments of the present invention, according to the default changeable weight factor, default practical removal amount, default polishing speed, in advance If the first polishing time and predesigned compensation value predict the predictive compensation value and polishing time of the 1st pattern piece, so that below Pattern piece can be predicted and be optimized according to the polishing data of the 1st pattern piece.
Further, referring to figure 3., Fig. 3 is the optimization method of another chemically mechanical polishing provided in an embodiment of the present invention Flow chart, before step S210, this method further includes following steps:
Step S310: in the polishing time u ' according to t piece control light barriertChemistry is carried out to the t piece control light barrier After mechanical polishing, according to t piece control described in the control light barrier thickness before polishing and the control light barrier THICKNESS CALCULATION after polishing The practical removal amount Y ' of light barriert。
Step S320: according to the polishing time u ' of the t piece control light barriert, the t piece control light barrier it is pre- Survey offsetAnd the prediction removal amount of the t piece control light barrierCalculate the prediction polishing of the t piece control light barrier Rate b 't。
Step S330: according to the changeable weight factor lambda of the t piece control light barrier 't, the t piece control light barrier institute State practical removal amount Y 't, the t piece control light barrier the prediction polishing speed b 't, the t piece control light barrier it is described Polishing time u 'tAnd the predictive compensation value of the t piece control light barrierThe prediction for calculating t+1 piece control light barrier is mended Repay value
Step S340: according to the prediction polishing speed b ' of the t piece control light barriert, t+1 piece control light barrier Object removal amount T 't+1And the predictive compensation value of the t+1 piece control light barrierIt is light-blocking to calculate the t piece control The polishing time u ' of piecet+1。
Specifically, the default changeable weight factor in step S210, default practical removal amount, default polishing speed, presetting First polishing time and predesigned compensation value can pass through control light barrier (blanket identical with pattern piece surfacing Wafer polishing data) determine.Wherein, the polishing data for controlling light barrier can be by the progress of n piece control light barrier and step S110- step S140 identical step obtains, and prediction is until n-th control gear since the predictive compensation value that the 2nd controls light barrier Mating plate is then preset the changeable weight factor, default practical removal amount, default polishing speed, default first polishing time and is preset Offset is that the changeable weight factor, practical removal amount, polishing speed, polishing time and the prediction of n-th control light barrier are mended Repay value.
It should be noted that the 2nd control light barrier provided in an embodiment of the present invention controls the polishing optimization of light barrier to n-th The embodiment of method is consistent with the polishing embodiment of optimization method of above-mentioned 2nd pattern piece to n-th pattern piece, herein It repeats no more.
In embodiments of the present invention, for predicting the default changeable weight factor of the polishing data of the 1st pattern piece, presetting Practical removal amount, default polishing speed, default first polishing time and predesigned compensation value can pass through t piece and pattern piece surface Material it is identical control light barrier polishing data determine, make the 1st pattern piece polishing when can according to predictive compensation value into Row amendment.
Further, referring to figure 4., Fig. 4 is the optimization side of another chemically mechanical polishing provided in an embodiment of the present invention The flow chart of method, as n=2, before step S310, this method further includes following steps:
Step S410: according to default second polishing time u '11st control light barrier is carried out chemically-mechanicapolish polishing it Afterwards, the 1st figure according to the 1st control light barrier thickness before polishing and the 1st control light barrier THICKNESS CALCULATION after polishing The practical removal amount Y ' of shape piece1。
Step S420: the polishing time u ' of light barrier is controlled according to described 1st1And the 1st control light barrier The practical removal amount Y '1Calculate the practical polishing speed β ' of the 1st control light barrier1。
Step S430: according to described 1st control light barrier changeable weight factor lambda '1, it is described 1st control light barrier institute State practical removal amount Y '1, it is described 1st control light barrier the practical polishing speed β '1And the 1st control light barrier The polishing time u '1Calculate the predictive compensation value of the 2nd control light barrier
Step S440: the practical polishing speed β ' of light barrier is controlled according to described 1st1, the 2nd piece control light barrier mesh Mark removal amount T '2And the predictive compensation value of the 2nd control light barrierCalculate the polishing of the 2nd control light barrier Time u '2。
Specifically, the 2nd predictive compensation value for controlling light barrier and polishing time can control the throwing of light barrier according to the 1st Light data is calculated, and detailed process is as follows:
Firstly, being polished according to polishing time to the 1st control light barrier, wherein the polishing time of the 1st control light barrier It can be manually set by operator.After the completion of being polished to the 1st control light barrier, the thickness of the control light barrier is measured, is used in combination The thickness of control light barrier after the polishing subtracts the thickness of the control light barrier before polishing, to obtain the reality of the 1st control light barrier Removal amount.
Then, the polishing time and practical removal amount for controlling light barrier according to the 1st calculate the reality of the 1st control light barrier Polishing speed, calculation formula are as follows:
Wherein, the 1st polishing time for controlling light barrier and practical removal amount have determined in the previous step.
Then, the changeable weight factor, practical removal amount, practical polishing speed and the polishing of light barrier are controlled according to the 1st Time calculates the predictive compensation value of the 2nd control light barrier, and calculation formula is as follows:
Wherein, practical removal amount, practical polishing speed and the polishing time of the 1st control light barrier are equal in above-mentioned steps It has determined；1st control light barrier the changeable weight factor method of determination and the 1st pattern piece the changeable weight factor really It is consistent to determine mode, details are not described herein again.
Then, the object removal amount of the practical polishing speed for controlling light barrier according to the 1st and the 2nd control light barrier, pre- The polishing time of compensation value calculation the 2nd control light barrier is surveyed, calculation formula is as follows:
Wherein, the practical polishing speed of light barrier and the predictive compensation value of the 2nd pattern piece are controlled in above-mentioned steps for the 1st In it has been determined that the object removal amount of the 2nd pattern piece can be set according to actual needs by operator.
In embodiments of the present invention, due to the 1st control before light barrier do not have wafer can polishing data to it carry out Prediction, can preset a polishing time, be polished with the polishing time of setting, and obtained polishing speed, dynamic are weighed Repeated factor, practical removal amount etc. polish data for the prediction and optimization to subsequent wafer.
Second embodiment
The embodiment of the present invention provides a kind of optimization device of chemically mechanical polishing, and referring to figure 5., Fig. 5 is that the present invention is implemented A kind of flow chart of the optimization device for chemically mechanical polishing that example provides, which includes: the first computing module 500, is used for According to the polishing time u of n-th pattern piecenAfter being chemically-mechanicapolish polished to n-th pattern piece, before polishing The practical removal amount Y of n-th pattern piece described in pattern piece THICKNESS CALCULATION after pattern piece thickness and polishingn；Wherein, n is not Integer less than 1；Second computing module 600, for the polishing time u according to n-th pattern piecen, it is n-th described The predictive compensation value of pattern pieceAnd the prediction removal amount of n-th pattern pieceCalculate the pre- of n-th pattern piece Survey polishing speed bn；Third computing module 700, for the changeable weight factor lambda according to n-th pattern piecen, it is n-th described The practical removal amount Y of pattern piecen, n-th pattern piece the prediction polishing speed bn, n-th pattern piece The polishing time unAnd the predictive compensation value of n-th pattern pieceThe prediction for calculating (n+1)th pattern piece is mended Repay valueWherein, the changeable weight factor lambda of n-th pattern piecenBy the expection remaining life impact factor of consumptive material It determines；4th computing module 800, for the prediction polishing speed b according to n-th pattern piecen, it is (n+1)th described The object removal amount T of pattern piecen+1And the predictive compensation value of (n+1)th pattern pieceCalculate described (n+1)th The polishing time u of piece pattern piecen+1。
In embodiments of the present invention, according to the changeable weight factor of n-th pattern piece, practical removal amount, prediction polishing speed Rate, polishing time and predictive compensation value predict the budget offset and polishing time of (n+1)th pattern piece, and according to prediction Obtained budget offset and polishing time chemically-mechanicapolish polishes (n+1)th pattern piece.Wherein, n-th pattern piece The changeable weight factor it is related with the life cycle influence factor of consumptive material used is polished so that the device can with on-line optimization due to Polishing time Algorithm Error caused by the polishing speed difference under consumptive material difference life cycle is polished, polishing time is effectively increased The precision of algorithm.
Further, described device further include: the 5th computing module, for according to default changeable weight factor lambda0, it is default Practical removal amount Y0, default polishing speed b0, default first polishing time u0And predesigned compensation valueCalculate the 1st figure The predictive compensation value of shape piece6th computing module, for according to the default polishing speed b0, the 1st pattern piece Object removal amount T1And the predictive compensation value of the 1st pattern pieceWhen calculating the polishing of the 1st pattern piece Between u1。
In embodiments of the present invention, according to the default changeable weight factor, default practical removal amount, default polishing speed, in advance If the first polishing time and predesigned compensation value predict the predictive compensation value and polishing time of the 1st pattern piece, so that below Pattern piece can be predicted and be optimized according to the polishing data of the 1st pattern piece.
Further, described device further include: the 7th computing module, for when according to the polishing of t piece control light barrier Between u 'tAfter being chemically-mechanicapolish polished to the t piece control light barrier, according to before polishing control light barrier thickness and polishing The practical removal amount Y ' of t piece control light barrier described in control light barrier THICKNESS CALCULATION afterwardst；Wherein, t is the integer greater than 1, control gear Mating plate is identical as pattern piece surfacing；8th computing module, for the polishing time according to the t piece control light barrier u′t, the t piece control light barrier predictive compensation valueAnd the prediction removal amount of the t piece control light barrierCalculate institute State the prediction polishing speed b ' of t piece control light barriert；9th computing module, for the dynamic according to the t piece control light barrier Weight factor λ 't, the t piece control light barrier the practical removal amount Y 't, the t piece control light barrier the prediction throw Optical speed b 't, the t piece control light barrier the polishing time u 'tAnd the prediction of the t piece control light barrier is mended Repay valueCalculate the predictive compensation value of t+1 piece control light barrierWherein, the dynamic power of the t piece control light barrier Repeated factor λ 'tIt is determined by the expected remaining life impact factor of the consumptive material；Tenth computing module, for according to described the The prediction polishing speed b ' of t piece control light barriert, t+1 piece control light barrier object removal amount T 't+1And the t+1 The predictive compensation value of piece control light barrierCalculate the polishing time u ' of the t piece control light barriert+1。
In embodiments of the present invention, for predicting the default changeable weight factor of the polishing data of the 1st pattern piece, presetting Practical removal amount, default polishing speed, default first polishing time and predesigned compensation value can pass through t piece and pattern piece surface Material it is identical control light barrier polishing data determine, make the 1st pattern piece polishing when can according to predictive compensation value into Row amendment.
Further, described device further include: the 11st computing module, for according to default second polishing time u '1 After being chemically-mechanicapolish polished to the 1st control light barrier, according to the 1st control light barrier thickness before polishing and after polishing The practical removal amount Y ' of 1st pattern piece described in 1st control light barrier THICKNESS CALCULATION1；12nd computing module, for according to institute State the polishing time u ' of the 1st control light barrier1And the practical removal amount Y ' of the 1st control light barrier1Calculate institute State the practical polishing speed β ' of the 1st control light barrier1；13rd computing module, for controlling the dynamic of light barrier according to described 1st State weight factor λ '1, it is described 1st control light barrier the practical removal amount Y '1, it is described 1st control light barrier the reality Polishing speed β '1And the polishing time u ' of the 1st control light barrier1Calculate the predictive compensation value of the 2nd control light barrierWherein, it is described 1st control light barrier the changeable weight factor lambda '1By the expected remaining life shadow of the consumptive material The factor is rung to determine；14th computing module, for controlling the practical polishing speed β ' of light barrier according to described 1st1, the 2nd The object removal amount T ' of piece control light barrier2And the predictive compensation value of the 2nd control light barrierCalculate described 2nd Control the polishing time u ' of light barrier2。
In embodiments of the present invention, due to the 1st control before light barrier do not have wafer can polishing data to it carry out Prediction, can preset a polishing time, be polished with the polishing time of setting, and obtained polishing speed, dynamic are weighed Repeated factor, practical removal amount etc. polish data for the prediction and optimization to subsequent wafer.
3rd embodiment
The embodiment of the present invention provides a kind of electronic equipment, comprising: processor, memory and bus, the memory are deposited The executable machine readable instructions of the processor are contained, when electronic equipment operation, the processor and the storage It is executed by bus communication between device, when the machine readable instructions are executed by the processor any described in first embodiment Method.
Fourth embodiment
The embodiment of the present invention provides a kind of computer readable storage medium, and meter is stored on the computer readable storage medium Calculation machine program, when which is run by processor execute any optional side of realizationing of first embodiment in it is any described in Method.
In conclusion the embodiment of the present invention provides a kind of optimization method and device of chemically mechanical polishing, comprising: in basis The polishing time u of n-th pattern piecenAfter being chemically-mechanicapolish polished to n-th pattern piece, according to the figure before polishing The practical removal amount Y of n-th pattern piece described in pattern piece THICKNESS CALCULATION after piece thickness and polishingn；Wherein, n is not less than 1 Integer；According to the polishing time u of n-th pattern piecen, n-th pattern piece predictive compensation valueAnd The prediction removal amount of n-th pattern pieceCalculate the prediction polishing speed b of n-th pattern piecen；According to described n-th The changeable weight factor lambda of piece pattern piecen, n-th pattern piece the practical removal amount Yn, n-th pattern piece institute State prediction polishing speed bn, n-th pattern piece the polishing time unAnd the prediction of n-th pattern piece OffsetCalculate the predictive compensation value of (n+1)th pattern pieceWherein, the changeable weight of n-th pattern piece Factor lambdanIt is determined by the expection remaining life impact factor of consumptive material；According to the prediction polishing speed of n-th pattern piece bn, (n+1)th pattern piece object removal amount Tn+1And the predictive compensation value of (n+1)th pattern piece Calculate the polishing time u of (n+1)th pattern piecen+1.Therefore, it is gone according to the changeable weight factor of n-th pattern piece, actually Except amount, prediction polishing speed, polishing time and predictive compensation value predict the budget offset and polishing of (n+1)th pattern piece Time, and the budget offset and polishing time that are obtained according to prediction chemically-mechanicapolish polish (n+1)th pattern piece.Its In, the changeable weight factor of n-th pattern piece is related with the life cycle influence factor of consumptive material used is polished, so that this method can With on-line optimization polishing time Algorithm Error as caused by the polishing speed difference under polishing consumptive material difference life cycle, effectively Improve the precision of polishing time algorithm.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain Lid is within protection scope of the present invention.Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that There is also other identical elements in process, method, article or equipment including the element.

Claims (10)

1. a kind of optimization method of chemically mechanical polishing characterized by comprising
In the polishing time u according to n-th pattern piecenAfter being chemically-mechanicapolish polished to n-th pattern piece, according to throwing The practical removal amount Y of n-th pattern piece described in the pattern piece THICKNESS CALCULATION after pattern piece thickness and polishing before lightn；Wherein, N is the integer not less than 1；
According to the polishing time u of n-th pattern piecen, n-th pattern piece predictive compensation valueAnd it is described The prediction removal amount of n-th pattern pieceCalculate the prediction polishing speed b of n-th pattern piecen；
According to the changeable weight factor lambda of n-th pattern piecen, n-th pattern piece the practical removal amount Yn, it is described The prediction polishing speed b of n-th pattern piecen, n-th pattern piece the polishing time unAnd n-th figure The predictive compensation value of shape pieceCalculate the predictive compensation value of (n+1)th pattern pieceWherein, n-th pattern piece The changeable weight factor lambdanIt is determined by the expection remaining life impact factor of consumptive material；
According to the prediction polishing speed b of n-th pattern piecen, (n+1)th pattern piece object removal amount Tn+1With And the predictive compensation value of (n+1)th pattern pieceCalculate the polishing time u of (n+1)th pattern piecen+1。
2. the optimization method of chemically mechanical polishing according to claim 1, which is characterized in that n-th pattern piece The prediction removal amountFor the practical removal amount Y of (n-1)th pattern piecen-1；Wherein, n is the integer greater than 1.
3. the optimization method of chemically mechanical polishing according to claim 1, which is characterized in that schemed described according to the 1st The polishing time u of shape piece1Before being chemically-mechanicapolish polished to the 1st pattern piece, the method also includes:
According to default changeable weight factor lambda0, preset practical removal amount Y0, default polishing speed b0, default first polishing time u0With And predesigned compensation valueCalculate the predictive compensation value of the 1st pattern piece
According to the default polishing speed b0, the 1st pattern piece object removal amount T1And the 1st pattern piece The predictive compensation valueCalculate the polishing time u of the 1st pattern piece1。
4. the optimization method of chemically mechanical polishing according to claim 3, which is characterized in that in the default dynamic of the basis Weight factor λ0, preset practical removal amount Y0, default polishing speed b0, default first polishing time u0And predesigned compensation value Calculate the predictive compensation value of the 1st pattern pieceBefore, the method also includes:
In the polishing time u ' according to t piece control light barriertAfter being chemically-mechanicapolish polished to the t piece control light barrier, root According to the practical removal of t piece control light barrier described in the control light barrier thickness before polishing and the control light barrier THICKNESS CALCULATION after polishing Measure Y 't；Wherein, t is the integer greater than 1, and control light barrier is identical as pattern piece surfacing；
According to the polishing time u ' of the t piece control light barriert, the t piece control light barrier predictive compensation valueWith And the prediction removal amount of the t piece control light barrierCalculate the prediction polishing speed b ' of the t piece control light barriert；
According to the changeable weight factor lambda of the t piece control light barrier 't, the t piece control light barrier the practical removal amount Y′t, the t piece control light barrier the prediction polishing speed b 't, the t piece control light barrier the polishing time u 't And the predictive compensation value of the t piece control light barrierCalculate the predictive compensation value of t+1 piece control light barrier Wherein, the changeable weight factor lambda of the t piece control light barrier 'tBy the expected remaining life of the consumptive material influence because Son determines；
According to the prediction polishing speed b ' of the t piece control light barriert, t+1 piece control light barrier object removal amount T 't+1 And the predictive compensation value of the t+1 piece control light barrier 4Calculate the polishing time of the t piece control light barrier u′t+1。
5. the optimization method of chemically mechanical polishing according to claim 4, which is characterized in that controlled described according to the 2nd The polishing time u ' of light barrier2Before being chemically-mechanicapolish polished to the 2nd control light barrier, the method also includes:
According to default second polishing time u '1After being chemically-mechanicapolish polished to the 1st control light barrier, before polishing The practical removal amount of 1st pattern piece described in the 1st control light barrier THICKNESS CALCULATION after 1st control light barrier thickness and polishing Y1′；
The polishing time u ' of light barrier is controlled according to described 1st1And the practical removal of the 1st control light barrier Measure Y1' calculate the described 1st practical polishing speed β ' for controlling light barrier1；
According to described 1st control light barrier changeable weight factor lambda '1, it is described 1st control light barrier the practical removal amount Y1', it is described 1st control light barrier the practical polishing speed β '1And the polishing time of the 1st control light barrier u′1Calculate the predictive compensation value of the 2nd control light barrierWherein, the changeable weight factor of the 1st control light barrier λ′1It is determined by the expected remaining life impact factor of the consumptive material；
The practical polishing speed β ' of light barrier is controlled according to described 1st1, the 2nd piece control light barrier object removal amount T '2With And the predictive compensation value of the 2nd control light barrierCalculate the polishing time u ' of the 2nd control light barrier2。
6. the optimization method of chemically mechanical polishing according to claim 1-5, which is characterized in that described according to institute State the changeable weight factor lambda of n-th pattern piecen, n-th pattern piece the practical removal amount Yn, n-th figure The prediction polishing speed b of piecen, n-th pattern piece the polishing time unAnd the institute of n-th pattern piece State predictive compensation valueCalculate the predictive compensation value of (n+1)th pattern pieceInclude:
The predictive compensation value of (n+1)th pattern piece is calculated according to the following formula
7. the optimization method of chemically mechanical polishing according to claim 1-5, which is characterized in that described n-th The changeable weight factor lambda of pattern piecenAre as follows:
λn=δ+| 1-2 δ | γn；
Wherein, δ is basic weight coefficient, | 1-2 δ | for the error of n-th pattern piece and the difference of accumulated error weight；γn For the remaining life impact factor of the consumptive material.
8. the optimization method of chemically mechanical polishing according to claim 7, which is characterized in that the residue of the consumptive material Aging effects factor gammanAre as follows:
Wherein, ωp,ωd,ωhThe accounting coefficient of grinding pad, diamond disk and grinding head in the respectively described consumptive material, For the expection remaining life impact factor of the grinding pad,For the diamond disk expection remaining life influence because Son,For the expection remaining life impact factor of the grinding head.
9. the optimization method of chemically mechanical polishing according to claim 8, which is characterized in that the grinding pad it is described pre- Phase remaining life impact factorAre as follows:
Wherein,For the life expectancy of the grinding pad；For the grinding pad making after the completion of i-th pattern piece polishes Use the service life；T is the number of the grinding pad；
The expected remaining life impact factor of the diamond diskAre as follows:
Wherein,For the life expectancy of the diamond disk；It is completed for the diamond disk in i-th pattern piece polishing Service life afterwards；T is the number of the diamond disk；
The expected remaining life impact factor of the grinding headAre as follows:
Wherein,For the life expectancy of the grinding head；For the grinding head after the completion of i-th pattern piece polishes Service life.
10. a kind of optimization device of chemically mechanical polishing characterized by comprising
First computing module, in the polishing time u according to n-th pattern piecenChemical machine is carried out to n-th pattern piece After tool polishing, according to n-th pattern piece described in the pattern piece thickness before polishing and the pattern piece THICKNESS CALCULATION after polishing Practical removal amount Yn；Wherein, n is the integer not less than 1；
Second computing module, for the polishing time u according to n-th pattern piecen, n-th pattern piece prediction OffsetAnd the prediction removal amount of n-th pattern pieceCalculate the prediction polishing speed of n-th pattern piece bn；
Third computing module, for the changeable weight factor lambda according to n-th pattern piecen, n-th pattern piece it is described Practical removal amount Yn, n-th pattern piece the prediction polishing speed bn, n-th pattern piece the polishing time unAnd the predictive compensation value of n-th pattern pieceCalculate the predictive compensation value of (n+1)th pattern pieceIts In, the changeable weight factor lambda of n-th pattern piecenIt is determined by the expection remaining life impact factor of consumptive material；
4th computing module, for the prediction polishing speed b according to n-th pattern piecen, (n+1)th pattern piece Object removal amount Tn+1And the predictive compensation value of (n+1)th pattern pieceCalculate (n+1)th figure The polishing time u of piecen+1。
CN201910027830.6A 2019-01-11 2019-01-11 Optimization method and device for chemical mechanical polishing Active CN109664199B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910027830.6A CN109664199B (en) 2019-01-11 2019-01-11 Optimization method and device for chemical mechanical polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910027830.6A CN109664199B (en) 2019-01-11 2019-01-11 Optimization method and device for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
CN109664199A true CN109664199A (en) 2019-04-23
CN109664199B CN109664199B (en) 2020-05-22

Family

ID=66149358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910027830.6A Active CN109664199B (en) 2019-01-11 2019-01-11 Optimization method and device for chemical mechanical polishing

Country Status (1)

Country Link
CN (1) CN109664199B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112233975A (en) * 2020-09-04 2021-01-15 北京烁科精微电子装备有限公司 Grinding time control method, device and equipment and readable storage medium
CN113524019A (en) * 2021-07-27 2021-10-22 福建北电新材料科技有限公司 Chemical mechanical polishing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1412823A (en) * 2001-10-19 2003-04-23 日本电气株式会社 Polishing method and device capable of high precision controlling polishing time
US6932671B1 (en) * 2004-05-05 2005-08-23 Novellus Systems, Inc. Method for controlling a chemical mechanical polishing (CMP) operation
CN1661780A (en) * 2004-02-27 2005-08-31 台湾积体电路制造股份有限公司 CMP apparatus and polishing method
CN101104250A (en) * 2006-07-10 2008-01-16 上海华虹Nec电子有限公司 Method for effectively controlling CMP milling residual-film thickness
CN102189469A (en) * 2010-03-11 2011-09-21 中芯国际集成电路制造(上海)有限公司 Method for dynamically adjusting time limit of chemically-mechanical polishing
CN106312792A (en) * 2016-11-09 2017-01-11 上海华力微电子有限公司 Method for dynamically regulating safe grinding time limit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1412823A (en) * 2001-10-19 2003-04-23 日本电气株式会社 Polishing method and device capable of high precision controlling polishing time
CN1661780A (en) * 2004-02-27 2005-08-31 台湾积体电路制造股份有限公司 CMP apparatus and polishing method
US6932671B1 (en) * 2004-05-05 2005-08-23 Novellus Systems, Inc. Method for controlling a chemical mechanical polishing (CMP) operation
CN101104250A (en) * 2006-07-10 2008-01-16 上海华虹Nec电子有限公司 Method for effectively controlling CMP milling residual-film thickness
CN102189469A (en) * 2010-03-11 2011-09-21 中芯国际集成电路制造(上海)有限公司 Method for dynamically adjusting time limit of chemically-mechanical polishing
CN106312792A (en) * 2016-11-09 2017-01-11 上海华力微电子有限公司 Method for dynamically regulating safe grinding time limit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112233975A (en) * 2020-09-04 2021-01-15 北京烁科精微电子装备有限公司 Grinding time control method, device and equipment and readable storage medium
CN112233975B (en) * 2020-09-04 2024-02-09 北京晶亦精微科技股份有限公司 Grinding time control method, device, equipment and readable storage medium
CN113524019A (en) * 2021-07-27 2021-10-22 福建北电新材料科技有限公司 Chemical mechanical polishing method

Also Published As

Publication number Publication date
CN109664199B (en) 2020-05-22

Similar Documents

Publication Publication Date Title
TW483060B (en) Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same
CN109664199A (en) A kind of optimization method and device of chemically mechanical polishing
US20010039462A1 (en) System and method for predicting software models using material-centric process instrumentation
WO1998014306A1 (en) A method and system for controlling chemical mechanical polishing thickness removal
EP1138071A1 (en) A method and system for polishing semiconductor wafers
GB2394683A (en) A method &amp; apparatus for cmp comprising calculating thickness to be polished from the detected reflected light with reference to a table
CN101456151A (en) Chemical mechanical polishing and end-point detection method thereof
CN109968186A (en) The online end-point detection method of chemically mechanical polishing based on spectrum
CN204729849U (en) A kind of full-automatic level-off base for surveying instrument
TW544364B (en) Method and apparatus for simulating, and method and apparatus for polishing using the same
CN105073395B (en) Method for being controlled to the manufacturing equipment used in optical mirror slip manufacturing process
JPH10106984A (en) Polishing method and controller in polishing equipment for semiconductor wafer
JP6942657B2 (en) Battery system, remaining capacity estimation device, and remaining capacity estimation method
US20110132871A1 (en) Shear sensors and uses thereof
CN104850060A (en) Numerical controller for machine tool with efficient regular inspection function for components
Khanna et al. Methodology for pad conditioning sweep optimization for advanced nodes
CN103972049B (en) Wafer recovery method
CN102189469B (en) Method for dynamically adjusting time limit of chemically-mechanical polishing
CN112077731B (en) Grinding control method and system based on shared time
CN109742017A (en) Wafer reduction process
JPS63185574A (en) Polishing control system for semiconductor wafer
CN102689267B (en) Chemical mechanical lapping method
CN105547883A (en) Prediction method for abrasion index (AI) uder complex working conditions
CN102729140B (en) Chemical-mechanical grinding system and method for grinding wafers with the same
CN109580406A (en) Putty grinability quantifies test method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230307

Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing

Patentee after: Beijing Jingyi Precision Technology Co.,Ltd.

Address before: No.1, third Taihe street, Beijing Economic and Technological Development Zone, 100176

Patentee before: BEIJING SEMICONDUCTOR EQUIPMENT INSTITUTE (THE 45TH Research Institute OF CETC)