CN102189469A - Method for dynamically adjusting time limit of chemically-mechanical polishing - Google Patents
Method for dynamically adjusting time limit of chemically-mechanical polishing Download PDFInfo
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- CN102189469A CN102189469A CN2010101246551A CN201010124655A CN102189469A CN 102189469 A CN102189469 A CN 102189469A CN 2010101246551 A CN2010101246551 A CN 2010101246551A CN 201010124655 A CN201010124655 A CN 201010124655A CN 102189469 A CN102189469 A CN 102189469A
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Abstract
The invention discloses a method for dynamically adjusting a time limit of chemically-mechanical polishing, which comprises the following steps of: collecting polishing time of all wafers in a historical time period, and initializing an initial lower limit value and an initial upper limit value of the polishing time of wafers to be polished in a current batch; collecting a polishing speed and a target polishing speed of the wafers in the former batch, a thickness and a target thickness of each wafer to be polished in the current batch before chemical mechanical polishing; establishing a model of a reference lower limit value and a reference upper limit value of the polishing time of the wafers to be polished in the current batch according to the data; and comparing the initial lower limit value with the reference lower limit value and comparing the initial upper limit value with the reference upper limit value to obtain a lower limit value and an upper limit value of the polishing time of the wafers to be polished in the current batch. The method disclosed by the invention can be used for adjusting the time limit of chemical mechanical polishing of the wafers in different batches in real time, therefore, the wafers with abnormal polishing time can be more easily monitored, frequency of halt maintenance can be reduced and working efficiency is improved.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly be used for dynamically adjusting the method for the event horizon of chemically mechanical polishing (CMP).
Background technology
In the manufacture process of integrated circuit, on silicon wafer, form for example sandwich construction such as metal level, oxide layer usually.The surface of formed sandwich construction is easy to occur irregular problem, thereby produces defective during follow-up processing step.Therefore need carry out leveling to the surface of device.
Chemically mechanical polishing (CMP) is the process means that a kind of common being used to makes the device surface complanation.The CMP Technology Need uses has polishability and corrosive polishing slurries, and is used polishing pad and support ring, by comprehensive utilization chemical action and mechanism, semiconductor wafer is polished.Most productivity CMP equipment all has a plurality of rotating disks and polishing pad, to adapt to the needs that polish different materials.Typical C MP technology may further comprise the steps: at first, on first rotating disk to remove the bulk film than higher polishing speed (being the removed speed of material); Secondly, after second reaches, further polish up to reaching corresponding boundary layer with lower polishing speed on the more rotating disk.
In first step, need preestablish a fixing polishing thickness (or the fixing polishing time under the same polishing speed) usually, comparatively speaking, the process of this step is easier to control; But in follow-up at least one polishing step that with the boundary layer is terminal point, generally need monitor terminal point to realize more accurate endpoint control by the end point determination device.For each wafer with similar layer structure (with batch or in batches), although the formation condition of the layer that each wafer need polish is similar, it is slightly different that the thickness of these layers, density, defect distribution, interface state etc. influences the factor possibility of polishing process.Therefore, even polishing speed is constant, also there is certain difference in the polishing time of each wafer actual needs.On the other hand, existing end point determination device (for example optics or electrical way) can't be made real-time adjustment to the judgment mode of terminal point according to structure in the layer of the complexity that is run into, so the polishing time that end point determination device detected " terminal point " may not be each layer actual needs.In this case, in order to obtain suitable balance, when carrying out CMP, except adopting the end point determination device, need reject the underproof wafer of polishing in conjunction with other parameters toward contact in the raising yields and between reducing cost.Polishing time become thus can reference an important parameter.
As mentioned above, there is certain difference in the polishing time of each wafer actual needs.Yet for same one deck of similar wafer, the polishing time of most of wafer will inevitably fluctuate in a certain interval.Therefore the real-time monitoring of polishing time is become one of selection that those skilled in the art address the above problem.
In present CMP process, a kind of monitoring CMP time method is according to the higher limit (T_max) of the given polishing time of actual conditions and lower limit (T_min).Usually, as long as actual polishing time just illustrates that this time polishing time meets the requirements between T_max and T_min.Otherwise if polishing time, illustrates then that this time polishing time is undesirable greater than T_max or less than T_min, the corresponding wafer that obtains is a substandard product.But said method can bring some problems.At first, there is difficulty in the setting to T_max and T_min.Because; if it is too small that the time range between T_max and the T_min is set ground; can be with those satisfy technological requirement originally and not the product in this bound scope detect, check waste of manpower unnecessary downtime, reduce productivity ratio thereby this can cause increasing.On the contrary, if with the time range between T_max and the T_min set excessive, can cause again monitoring out substandard product effectively.Secondly, the similar sandwich construction that even pattern is similar, material is identical, because may there be some differences in the process conditions of the polished layer of each batch formation in early stage, the required desirable polishing time of each similar batch wafers also can there are differences, therefore, if ignore the actual conditions (thickness before for example polishing etc.) of the polished layer of each batch wafers each batch is provided with unified polishing time upper lower limit value, just do not reach desirable polishing effect probably.
Summary of the invention
Introduced the notion of a series of reduced forms in the summary of the invention part, this will further describe in specific embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
For solve in the prior art owing to the higher limit of polishing time and lower limit set bad cause can't the effective monitoring polishing time situation, the invention provides a kind of method that is used for dynamically adjusting the event horizon of chemically mechanical polishing, comprise the following steps: 1) collect the polishing time of all wafers in the historical time section P; The initial lower limit Ctrl1 of the polishing time of determining first batch of polished batch wafers according to the quantity and the described polishing time of described wafer
RWith initial higher limit Ctrl2
R, wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 built-in testing control sheets and described test control sheet polished; Collect the thickness T H_Blank1_n of described test control sheet before carrying out described polishing respectively, finish thickness T H_Blank2_n and actual polishing time T_Blank_n after the described polishing;
3) draw the actual polishing speed RR11_n of described test control sheet respectively by following formula:
RR11_n＝(TH_Blank1_n-TH_Blank2_n)/T_Blank_n，
n＝1，2，3，4，...
And the mean value of calculating RR11n is as the polishing speed RR11 of described test control sheet;
4) at least 4 polished wafers of random choose from described first batch of polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described first batch of polished batch wafers;
5) the target polished speed RR10 and the target thickness Pre0 of described first batch of polished batch wafers before carrying out described polishing of the described test control sheet of collection;
6) model of the reference lower limit value Ctrl1 of the described first batch of polished batch wafers polishing time of foundation calculating and reference upper level value Ctrl2 is as follows:
Ctrl1＝T1+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Ctrl2＝T2+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Wherein, T1 is 40～50 seconds, and T2 is 60～70 seconds; K2 is 0.075～0.175 second branch/dust, and K3 is 0.01～0.03 a second/dust; Then
7) obtain the lower limit T_min and the higher limit T_max of the polishing time of described first batch of polished batch wafers in polishing process according to following mode:
If Ctrl1＜Ctrl1
R, T_min=Ctrl1 then
R, otherwise, T_min=Ctrl1;
If Ctrl2＜Ctrl2
R, T_max=Ctrl2 then, otherwise, T_max=Ctrl2
R
Wherein, described Ctrl1
RUnit be second, described Ctrl2
RUnit be second, the unit of described Ctrl1 is second, the unit of described Ctrl2 is second, and the unit of described TH_Blank1_n is a dust, and the unit of described TH_Blank2_n is a dust, the unit of described T_Blank_n is a branch, the unit of described RR11_n be dust/minute, the unit of described RR11 be dust/minute, the unit of described RR10 be dust/minute, the unit of described Pre1 is a dust, and the unit of described Pre0 is a dust.
The invention provides a kind of method that is used for dynamically adjusting the event horizon of chemically mechanical polishing, comprise the following steps:
1) polishing time of the interior all wafers of collection historical time section P '; The initial lower limit Ctrl1 of the polishing time of determining current polished batch wafers according to the quantity and the described polishing time of described wafer
R' and initial higher limit Ctrl2
R', wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 polished wafers in a collection of wafer in the past; Collect the thickness T H1_n ' of described polished wafer before carrying out described polishing respectively, finish thickness T H2_n ' and actual polishing time T_n ' after the described polishing;
3) draw the actual polishing speed RR21_n ' of described polished wafer respectively by following formula:
RR21_n’＝(TH1_n’-TH2_n’)/T_n’，
n＝1，2，3，4，...
And the mean value of calculating RR21_n ' is as the polishing speed RR21 ' of described last batch wafers;
4) at least 4 polished wafers of random choose from described current polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 ' before the described polishing as described current polished batch wafers;
5) the target polished speed RR20 ' and the target thickness Pre0 ' of described current polished batch wafers before carrying out described polishing of the described last batch wafers of collection;
6) model of the reference lower limit value Ctrl1 ' of the described current polished batch wafers polishing time of foundation calculating and reference upper level value Ctrl2 ' is as follows:
Ctrl1’＝T3’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Ctrl2’＝T4’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Wherein, T3 ' is 37～47 seconds, and T4 ' is 61～71 seconds; K1 ' is 0.012～0.032 second branch/dust, and K3 ' is 0.01～0.03 a second/dust; Then
7) obtain the lower limit T_min ' and the higher limit T_max ' of the polishing time of described current polished batch wafers in polishing process according to following mode:
If Ctrl1 '＜Ctrl1
R', T_min '=Ctrl1 then
R', otherwise, T_min '=Ctrl1 ';
If Ctrl2 '＜Ctrl2
R', T_max '=Ctrl2 ' then; Otherwise, T_max '=Ctrl2
R';
Wherein said Ctrl1
R' unit be second, described Ctrl2
R' unit be second, the unit of described Ctrl1 ' is second, the unit of described Ctrl2 ' is second, and the unit of described TH1_n ' is a dust, and the unit of described TH2_n ' is a dust, the unit of described T_n ' is a branch, the unit of described RR21_n ' be dust/minute, the unit of described RR21 ' be dust/minute, the unit of described RR20 ' be dust/minute, the unit of described Pre1 ' is a dust, and the unit of described Pre0 ' is a dust.
The invention provides a kind of method that is used for dynamically adjusting the event horizon of chemically mechanical polishing, comprise the following steps:
1) collect historical time section P " polishing time of interior all wafers; The initial lower limit Ctrl1 of the polishing time of determining first batch of polished batch wafers according to the quantity and the described polishing time of described wafer
R" and initial higher limit Ctrl2
R", wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 built-in testing control sheets and described test control sheet polished; Collect the thickness T H_Blank1_n of described test control sheet before carrying out described polishing respectively ", finish the thickness T H_Blank2_n after the described polishing " and actual polishing time T_Blank_n ";
3) draw the actual polishing speed RR11_n of described test control sheet respectively by following formula ":
RR11_n”＝(TH_Blank1_n”-TH_Blank2_n”)/T_Blank_n”，
n＝1，2，3，4，...
And calculate RR11_n " mean value as the polishing speed RR11 of described test control sheet ";
4) at least 4 polished wafers of random choose from described first batch of polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described first batch of polished batch wafers ";
5) the target polished speed RR10 of the described test control sheet of collection " and the target thickness Pre0 of described first batch of polished batch wafers before carrying out described polishing ";
6) set up to calculate the reference lower limit value Ctrl1 of described first batch of polished batch wafers polishing time " and reference upper level value Ctrl2 " model as follows:
Ctrl1”＝T1”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Ctrl2”＝T2”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Wherein, T1 " be 40～50 seconds, T2 " be 60～70 seconds; K2 " be 0.075～0.175 second branch/dust, K3 " be 0.01～0.03 second/dust; Then
7) obtain the lower limit T_min of the polishing time of described first batch of polished batch wafers in polishing process according to following mode " and higher limit T_max ":
If Ctrl1 "＜Ctrl1
R", T_min then "=Ctrl1
R", otherwise, T_min "=Ctrl1 ";
If Ctrl2 "＜Ctrl2
R", T_max then "=Ctrl2 ", otherwise, T_max "=Ctrl2
R";
Wherein said Ctrl1
R" unit be second, described Ctrl2
R" unit be second; described Ctrl1 " unit be second, described Ctrl2 " unit be second, described TH_Blank1_n " unit be dust, described TH_Blank2_n " unit be dust; described T_Blank_n " unit be branch, described RR11_n " unit be dust/minute, described RR11 " unit be dust/minute, described RR10 " unit be dust/minute; described Pre1 " unit be dust, described Pre0 " unit be dust;
8) for second batch and follow-up polished batch wafers, select at least 4 polished wafers in a collection of wafer in the past; Collect the thickness T H1_n of described polished wafer before carrying out described polishing respectively " ', finish the thickness T H2_n after the described polishing " ' and actual polishing time T_n " ';
9) draw the actual polishing speed RR21_n of described polished wafer respectively by following formula " ':
RR21_n”’＝(TH1_n”’-TH2_n”’)/T_n”’，
n＝1，2，3，4，...
And calculate RR21_n " ' mean value as the polishing speed RR21 of described last batch wafers " ';
10) at least 4 polished wafers of random choose from described current polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described current polished batch wafers " ';
11) the target polished speed RR20 of the described last batch wafers of collection " ' and the target thickness Pre0 of described current polished batch wafers before carrying out described polishing " ';
12) set up calculating the reference lower limit value Ctrl1 of described current polished batch wafers polishing time " model of ' and reference upper level value Ctrl2 " ' is as follows:
Ctrl1”’＝T3”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Ctrl2”’＝T4”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Wherein, T3 " ' be 37～47 seconds, T4 " ' be 61～71 seconds; K1 " ' be 0.012～0.032 second branch/dust, K3 " ' be 0.01～0.03 second/dust; Then
13) obtain the lower limit T_min of the polishing time of described current polished batch wafers in polishing process according to following mode " ' and higher limit T_max " ':
If Ctrl1 " '＜Ctrl1
R", T_min then " '=Ctrl1
R", otherwise, T_min " '=Ctrl1 " ';
If Ctrl2 " '＜Ctrl2
R", T_max then " '=Ctrl2 " '; Otherwise, T_max " '=Ctrl2
R";
Wherein said Ctrl1 " ' unit be second; described Ctrl2 " ' unit be second, described TH_n " ' unit be dust; described TH2_n " ' unit be dust, described T_n " ' unit be branch, described RR21_n " ' unit be dust/minute, described RR21 " ' unit be dust/minute; described RR20 " ' unit be dust/minute, described Pre1 " ' unit be dust, described Pre0 " ' unit be dust.
According to method provided by the invention; can in time adjust the event horizon of different batches wafer chemically mechanical polishing according to polishing speed, wafer thickness etc.; thereby the easier unusual wafer of polishing time of monitoring out; and can reduce to shut down the frequency of maintenance; increase the validity of monitoring polishing time, increase work efficiency.In addition, the inventor finds that this method is not only applicable to the chemically mechanical polishing of shallow trench isolation from (STI), also applicable to other chemically mechanical polishings, and other CMP technologies such as for example W tungsten film polishing, copper polishing, polysilicon polishing, aluminium polishing.
Description of drawings
Following accompanying drawing of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Figure 1 shows that the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon according to an embodiment of the invention;
Figure 2 shows that the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon in accordance with another embodiment of the present invention;
Figure 3 shows that the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon of another embodiment according to the present invention;
The parameter declaration of table 1A after for the event horizon of dynamically adjusting chemically mechanical polishing according to an embodiment of the invention;
The parameter declaration of table 1B after for the event horizon of dynamically adjusting chemically mechanical polishing in accordance with another embodiment of the present invention.
The specific embodiment
In the following description, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and implemented.In other example,, be not described for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, will in following description, detailed steps be proposed, so that how explanation the present invention realizes dynamically adjusting the event horizon of chemically mechanical polishing.Obviously, execution of the present invention is not limited to the specific details that the technical staff had the knack of of semiconductor applications.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.It should be noted that herein and will when describing embodiment, refer to " chemically mechanical polishing ", so that briefly describe each step and technical term with " polishing ".
First embodiment
Since the CMP board all to carry out at set intervals predictive maintenance (Predictivemaintenance, PM), PM weekly for example, every month PM, annual PM.So, if current polished batch wafers after certain predictive maintenance, is then calculated the boundary of the polishing time of this batch wafers with reference to Fig. 1.Otherwise, if current polished batch wafers after certain batch of polished wafer, is then calculated the boundary of the polishing time of this batch wafers with reference to Fig. 2.
Show the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon according to an embodiment of the invention with reference to Fig. 1, its concrete steps are as follows:
At first, in step 101, respectively to the initial lower limit (Ctrl1 of the polishing time of first batch of polished batch wafers
R, unit is second) and initial higher limit (Ctrl2
R, unit for second) carry out initialization.Wherein, the quantity of described first batch of polished batch wafers is determined according to actual needs, for example, is 25 in one embodiment.And various parameters such as the base material between the different chips in the described first batch of polished batch wafers, polished layer, target polished speed, current wafer thickness, target polished thickness should be unanimous on the whole.Collect the polishing data of all wafers in the particular historical time period (P).Wherein, described special time period is selected according to actual needs, for example 3 months.Described polishing data comprise the actual polishing time of every wafer in this historical time section.Initial lower limit (the Ctrl1 of the polishing time of determining first batch of polished batch wafers according to the quantity and the actual polishing time of polished wafer
R, unit is second) and initial higher limit (Ctrl2
R, unit is second).The actual polishing time of some wafers is as the criterion in this time period covering for this initial lower limit and initial higher limit, and this some can be preferably more than 95% for more than 80%.
Then, in step 102, select the test control sheet of some.This some is at least 4, and for example 4～8, this sentences 4 and is example.
Afterwards, in step 103, on the CMP board, respectively this 4 built-in testing control sheet is polished, calculate the actual polishing speed (RR11_n of every built-in testing control sheet, unit be dust/minute), obtain the polishing speed (RR11, unit are dust/minute) of this BT(batch testing) control sheet then.Its determining step is as follows:
A) collect the thickness (TH_Blank1_n, unit be dust) of every built-in testing control sheet before carrying out the CMP polishing respectively;
B) collect the thickness (TH_Blank2_n, unit be dust) of every built-in testing control sheet after finishing the CMP polishing respectively;
C) collect the actual polishing time (T_Blank_n, unit for divide) of every built-in testing control sheet respectively;
D) calculate the actual polishing speed (RR11_n, unit are dust/minute) of every built-in testing control sheet respectively according to following formula:
RR11_n＝(TH_Blank1_n-TH_Blank2_n)/T_Blank_n
Wherein, n=1,2,3,4,
And then the mean value of calculating RR11_n is as the polishing speed RR11 of described test control sheet.
Once more, in step 104, determine the thickness (Pre1, unit be dust) of first batch of polished batch wafers before carrying out the CMP polishing.Because parameters such as the thickness of each layer, density, defect distribution, interface state are slightly different, even so for same batch wafers, the thickness of different chips before carrying out the CMP polishing also can be slightly different, therefore average thickness that approx will this first batch of polished batch wafers is considered as Pre1, and its determining step is as follows:
A) wafer of random choose some from first batch of polished batch wafers, the quantity of this first batch of polished batch wafers is preferably 25, and this some is at least 4, and for example 4～6, this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out the CMP polishing respectively;
C) calculate the average thickness of this 4 wafer as the thickness Pre1 of first batch of polished batch wafers before carrying out the CMP polishing.
Then, in step 105, determine in advance that according to actual conditions the target polished speed (RR10, unit are dust/minute) of test control sheet and first batch of polished batch wafers carrying out the target thickness (Pre0, unit be dust) of CMP before polishing.
Then, in step 106, the model of reference lower limit value of the first batch of polished batch wafers polishing time of foundation calculating (Ctrl1, unit are second) and reference upper level value (Ctrl2, unit are second) is as follows respectively:
Ctrl1＝T1+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Ctrl2＝T2+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Wherein, T1, T2 are the values of determining according to actual conditions, and T1 is 40～50s, is preferably 45s, and T2 is 60～70s, is preferably 65s.K2, K3 are weight factor, and K2 is 0.075～0.175 (second branch/dust), are preferably 0.125 (second branch/dust), and K3 is 0.01～0.03 a second/dust, is preferably 0.02 second/dust.They polish data with polissoir, history, production line is relevant.Those skilled in the art can select suitable numerical value according to actual conditions in above-mentioned scope.
At last, in step 107, obtain the lower limit (T_min) and the higher limit (T_max) of the polishing time of first batch of polished batch wafers in polishing process according to following mode:
A) if Ctrl1＜Ctrl1
R, T_min=Ctrl1 then
R
Otherwise, T_min=Ctrl1;
B) if Ctrl2＜Ctrl2
R, T_max=Ctrl2 then;
Otherwise, T_max=Ctrl2
R
If the actual polishing time of the wafer in the first batch of polished batch wafers in the scope of this lower limit and higher limit, illustrates that then the polishing time of this wafer meets the requirements, otherwise illustrates that the polishing time of this wafer is undesirable.
Second embodiment
Show the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon in accordance with another embodiment of the present invention with reference to Fig. 2, its concrete steps are as follows:
At first, in step 201, respectively to the initial lower limit (Ctrl1 of the polishing time of each polished batch wafers of epicycle
R', unit is second) and initial higher limit (Ctrl2
R', unit for second) carry out initialization.Wherein, the quantity of described each polished batch wafers is determined according to actual needs, for example, is 25 in one embodiment.And various parameters such as the base material between the different chips in described each polished batch wafers, polished layer, target polished speed, current wafer thickness, target polished thickness should be unanimous on the whole.Collect the particular historical time period polishing data of all wafers in (P ').Wherein, described special time period is selected according to actual needs, for example 3 months.Described polishing data comprise the actual polishing time of every wafer in this historical time section.Initial lower limit (the Ctrl1 of the polishing time of determining each polished batch wafers of epicycle according to the quantity and the actual polishing time of polished wafer
R', unit is second) and initial higher limit (Ctrl2
R', unit is second).The actual polishing time of some wafers is as the criterion in this time period covering for this initial lower limit and initial higher limit, and this some can be preferably more than 95% for more than 80%.
Secondly, in step 202, determine last batch wafers polishing speed (RR21 ', unit be dust/minute) and target polished speed (RR20 ', unit be dust/minute), and the thickness of current polished batch wafers before carrying out CMP polishing (Pre1 ', unit is a dust) and the target thickness before carrying out the CMP polishing (Pre0 ', unit is a dust).Wherein:
A) determine last batch wafers polishing speed (RR21 ', unit be dust/minute), its determining step is as follows:
A) wafer of random choose some in the past a collection of wafer, the quantity of this last batch wafers is preferably 25, and this some is at least 4, is preferably 4～6, and this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out CMP polishing (TH1_n ', unit is a dust) respectively;
C) collect the thickness of every wafer after finishing CMP polishing (TH2_n ', unit is a dust) respectively;
D) collect the actual polishing time (T_n ', unit is for dividing) of every wafer respectively;
E) by following formula calculate respectively this 4 wafer actual polishing speed (RR21_n ', unit be dust/minute):
RR21_n’＝(TH1_n’-TH2_n’)/T_n’
Wherein, n=1,2,3,4;
F) calculate the polishing speed RR21 ' of the mean value of RR21_n ' as this last batch wafers.
B) determine the thickness of current polished batch wafers before carrying out CMP polishing (Pre1 ', unit is a dust).Because parameters such as the thickness of each layer, density, defect distribution, interface state are slightly different, even so for same batch wafers, the thickness of different chips before carrying out the CMP polishing also can be slightly different, therefore average thickness that approx will this current polished batch wafers is considered as Pre1 ", its determining step is as follows:
A) wafer of random choose some from current polished batch wafers, the quantity of this current polished batch wafers is preferably 25, and this some is at least 4, and for example 4～6, this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out the CMP polishing respectively;
C) calculate the average thickness of this 4 wafer as the thickness Pre1 ' of current polished batch wafers before carrying out the CMP polishing.
C) according to actual conditions determine in advance last batch wafers target polished speed (RR20 ', unit be dust/minute) and current polished batch wafers carrying out the target thickness of CMP before polishing (Pre0 ', unit is a dust).
In step 203, the model that set up to calculate the reference lower limit value (Ctrl1 ', unit be second) of current polished batch wafers polishing time and reference upper level value (Ctrl2 ', unit is second) respectively is as follows:
Ctrl1’＝T3’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Ctr12’＝T4’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Wherein, T3 ', T4 ' are the values of determining according to actual conditions, and T3 ' is 37～47s, is preferably 42s, and T4 ' is 61～71s, is preferably 66s.K1 ', K3 ' are weight factor, and K1 ' is 0.012～0.032 second branch/dust, are preferably 0.022 second branch/dust, and K3 ' is 0.01～0.03 a second/dust, is preferably 0.02 second/dust.They polish data with polissoir, history, production line is relevant.Those skilled in the art can select suitable numerical value according to actual conditions in above-mentioned scope.
In step 204, obtain the lower limit (T_min ', unit is second) of the polishing time of current polished batch wafers in polishing process and higher limit (T_max ', unit is second) according to following mode:
A) if Ctrl1 '＜Ctrl1
R', T_min '=Ctrl1 then
R';
Otherwise, T_min '=Ctrl1 ';
B) if Ctrl2 '＜Ctrl2
R', T_max '=Ctrl2 ' then;
Otherwise, T_max '=Ctrl2
R'.
If the actual polishing time of the wafer in the current polished batch wafers in the scope of this lower limit and higher limit, illustrates that then the polishing time of this wafer meets the requirements, otherwise illustrates that the polishing time of this wafer is undesirable.
The 3rd embodiment
Show the method flow diagram that is used for dynamically adjusting the chemically mechanical polishing event horizon of another embodiment according to the present invention with reference to Fig. 3, its concrete steps are as follows:
At first, in step 301, to the initial lower limit (Ctrl1 of the polishing time of each polished batch wafers of epicycle
R", unit is second) and initial higher limit (Ctrl2
R", unit for second) carry out initialization.Wherein, the quantity of described each polished batch wafers is determined according to actual needs, for example, is 25 in one embodiment.And various parameters such as the base material between the different chips in described each polished batch wafers, polished layer, target polished speed, current wafer thickness, target polished thickness should be unanimous on the whole.Collect the particular historical time period polishing data of all wafers in (P ").Wherein, the described particular historical time period is selected according to actual needs, for example 3 months.Described polishing data comprise the actual polishing time of every wafer in this particular historical time period.The initial lower limit of the polishing time of determining each polished batch wafers of epicycle according to the quantity and the actual polishing time of polished wafer and initial higher limit.This initial lower limit and initial higher limit with can cover this particular historical in the time period the actual polishing time of some wafers be as the criterion, this some can be preferably more than 95% for more than 80%.
Then, in step 302, test control sheet is polished and collects relevant polishing data.Wherein:
A) the test control sheet of some is selected by elder generation.This some is at least 4, and for example 4～8, this sentences 4 and is example.
B) on the CMP board, respectively this 4 built-in testing control sheet is polished, determine every built-in testing control sheet actual polishing speed (RR11_n ", unit be dust/minute), obtain then this BT(batch testing) control sheet polishing speed (RR11 ", unit be dust/minute).Its determining step is as follows:
A) collect the thickness of every built-in testing control sheet before carrying out CMP polishing (TH_Blank1_n ", unit is a dust) respectively;
B) collect the thickness of every built-in testing control sheet after finishing CMP polishing (TH_Blank2_n ", unit is a dust) respectively;
C) collect the actual polishing time (T_Blank_n ", unit is for dividing) of every built-in testing control sheet respectively;
D) according to following formula calculate respectively every built-in testing control sheet actual polishing speed (RR11_n ", unit be dust/minute):
RR11_n”＝(TH_Blank1_n”-TH_Blank2_n”)/T_Blank_n”
Wherein, n=1,2,3,4,
And then calculate RR11_n " mean value as the polishing speed RR11 of described test control sheet ".
C) determine the thickness of first batch of polished batch wafers before carrying out CMP polishing (Pre1 ", unit is a dust).Because parameters such as the thickness of each layer, density, defect distribution, interface state are slightly different, even so for same batch wafers, the thickness of different chips before carrying out the CMP polishing also can be slightly different, therefore average thickness that approx will this first batch of polished batch wafers is considered as Pre1 ", its determining step is as follows:
A) wafer of random choose some from this first batch of polished batch wafers, the quantity of this first batch of polished batch wafers is preferably 25, and this some is at least 4, and for example 4～6, this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out the CMP polishing respectively;
C) calculate the average thickness of this 4 wafer as the thickness Pre1 of this first batch of polished batch wafers before carrying out the CMP polishing ".
D) according to actual conditions determine in advance test control sheet target polished speed (RR10 ", unit be dust/minute) and this first batch of polished batch wafers carrying out the target thickness of CMP before polishing (Pre0 ", unit is a dust).
Afterwards, in step 303, the model that set up to calculate the reference lower limit value (Ctrl1 ", unit be second) of first batch of polished batch wafers polishing time and reference upper level value (Ctrl2 ", unit is second) respectively is as follows:
Ctrl1”＝T1”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Ctrl2”＝T2”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Wherein, T1 ", T2 " be the value of determining according to actual conditions, T1 " be 40～50s, be preferably 45s, T2 " be 60～70s, be preferably 65s.K2 ", K3 " be weight factor, K2 " be 0.075～0.175 (second branchs/dust), be preferably 0.125 (branch/dust second), K3 " be 0.01～0.03 second/dust, be preferably 0.02 second/dust.They polish data with polissoir, history, production line is relevant.Those skilled in the art can select suitable numerical value according to actual conditions in above-mentioned scope.
Subsequently, in step 304, obtain the lower limit (T_min ", unit is second) of the polishing time of first batch of polished batch wafers in polishing process and higher limit (T_max ", unit is second) according to following mode:
If a) Ctrl1 "＜Ctrl1
R", T_min then "=Ctrl1
R";
Otherwise, T_min "=Ctrl1 ";
B) if Ctrl2 "＜Ctrl2
R", T_max then "=Ctrl2 ";
Otherwise, T_max "=Ctrl2
R".
If the actual polishing time of the wafer in this first batch of batch wafers in the scope of this lower limit and higher limit, illustrates that then the polishing time of this wafer meets the requirements, otherwise illustrates that the polishing time of this wafer is undesirable.
Next, in step 305, for second batch and follow-up each batch wafers, determine last batch wafers actual polishing speed (RR21 " '; unit be dust/minute) and target polished speed (RR20 " ', unit be dust/minute), and the thickness of current polished batch wafers before carrying out CMP polishing (Pre " '; unit is a dust) and the target thickness before carrying out the CMP polishing (Pre0 " ', unit is a dust).Wherein:
A) determine last batch wafers actual polishing speed (RR21 " ', unit be dust/minute), its determining step is as follows:
A) wafer of random choose some in the past a collection of wafer, the quantity of this last batch wafers is preferably 25, and this some is at least 4, is preferably 4～6, and this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out CMP polishing (TH1_n " ', unit is a dust) respectively;
C) collect the thickness of every wafer after finishing CMP polishing (TH2_n " ', unit is a dust) respectively;
D) collect the actual polishing time (T_n " ', unit is for dividing) of every wafer respectively;
E) according to following formula calculate respectively every wafer actual polishing speed (RR11_n " ', unit be dust/minute):
RR21_n”’＝(TH1_n”’-TH2_n”’)/T_n”’
Wherein, n=1,2,3,4;
F) calculate RR21_n " ' mean value as the polishing speed RR21 of this last batch wafers " '.
B) determine the thickness of current polished batch wafers before carrying out CMP polishing (Pre1 " ', unit is a dust).Because parameters such as the thickness of each layer, density, defect distribution, interface state are slightly different, even so for same batch wafers, the thickness of different chips before carrying out the CMP polishing also can be slightly different, therefore average thickness that approx will this polished batch wafers is considered as Pre1 ", its determining step is as follows:
A) wafer of random choose some from current polished batch wafers, the quantity of this current polished batch wafers is preferably 25, and this some is at least 4, and for example 4～6, this sentences 4 and is example;
B) collect the thickness of every wafer before carrying out the CMP polishing respectively;
C) calculate the average thickness of this 4 wafer as the thickness Pre1 of current polished batch wafers before carrying out the CMP polishing " '.
C) according to actual conditions collect in advance last batch wafers target polished speed (RR20 " ', unit be dust/minute) and current polished batch wafers carrying out the target thickness of CMP before polishing (Pre0 " ', unit is a dust).
In step 306, the model that set up to calculate the reference lower limit value (Ctrl1 " ', unit be second) of current polished batch wafers polishing time and reference upper level value (Ctrl2 " ', unit is second) respectively is as follows:
Ctrl1”’＝T3”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Ctrl2”’＝T4”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Wherein, T3 " ', T4 " ' be the value of determining according to actual conditions, T3 " ' be 37～47s, be preferably 42s, T4 " ' be 61～71s, be preferably 66s.K1 " ', K3 " ' be weight factor, K1 " ' be 0.012～0.032 second branch/dust, be preferably 0.022 second branch/dust, K3 " ' be 0.01～0.03 second/dust, be preferably 0.02 second/dust.They polish data with polissoir, history, production line is relevant.Those skilled in the art can select suitable numerical value according to actual conditions in above-mentioned scope.
In step 307, set up judgment formula, obtain the lower limit (T_min ", unit is second) of the polishing time of current polished batch wafers in polishing process and higher limit (T_max ", unit is second):
If a) Ctrl1 " '＜Ctrl1
R", T_min=Ctrl1 then
R";
Otherwise, T_min " '=Ctrl1 " ';
B) if Ctrl2 " '＜Ctrl2
R", T_max then " '=Ctrl2 " ';
Otherwise, T_max " '=Ctrl2
R".
If the actual polishing time of the wafer in the current polished batch wafers in the scope of this lower limit and higher limit, illustrates that then the polishing time of this wafer meets the requirements, otherwise illustrates that the polishing time of this wafer is undesirable.
In addition, because the CMP board all will carry out predictive maintenance (Predictivemaintenance, i.e. PM) at set intervals, such as PM weekly, every month PM, annual PM.So; if current polished batch wafers is after certain predictive maintenance; perhaps long-time the shutdown appears in CMP equipment; all need treat before polished wafer carries out glossing; test control sheet is polished, with the lower limit and the higher limit of the polishing time of determining current polished batch wafers.That is, behind completing steps 310, if CMP equipment has carried out predictive maintenance or long-time shutdown occurred, the polished wafer of next batch need carry out step 302 again so.Otherwise, carry out step 305.
In each embodiment of the present invention, to utilize the Reflection polissoir of company of Applied Materials (AMAT) to treat polished wafer and polish, its polishing pad model is IC1010.Test control sheet for through after the high density plasma CVD oxide layer, do not have a wafer of any pattern.Polished batch wafers for through after the high density plasma CVD oxide layer, have a wafer of pattern.Table 1A and 1B show the value condition of each parameter among preceding two embodiment of the present invention and the polishing time lower limit that the method according to this invention calculates and the example of higher limit respectively.
| T1 | 45 seconds |
| T2 | 65 seconds |
| RR11 | 1350 dusts/minute |
| RR10 | 1300 dusts/minute |
| Pre1 | 5539 dusts |
| Pre0 | 5500 dusts |
| K2 | 0.125 second branch/dust |
| K3 | 0.02 second/dust |
| Ctrl1 | 39.5 second |
| Ctrl2 | 59.5 second |
Table 1A
| T3’ | 42 seconds |
| T4’ | 66 seconds |
| RR21’ | 2471.4 dust/minute |
| RR20’ | 2400 dusts/minute |
| Pre1’ | 5539 dusts |
| Pre0’ | 5500 dusts |
| K1’ | 0.022 second branch/dust |
| K3’ | 0.02 second/dust |
| Ctrl1’ | 41.2 second |
| Ctrl2’ | 65.2 second |
Table 1B
The present invention is illustrated by the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (22)
1. method that is used for dynamically adjusting the event horizon of chemically mechanical polishing may further comprise the steps:
1) polishing time of all wafers in the collection historical time section P; The initial lower limit Ctrl1 of the polishing time of determining first batch of polished batch wafers according to the quantity and the described polishing time of described wafer
RWith initial higher limit Ctrl2
R, wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 built-in testing control sheets and described test control sheet polished; Collect the thickness T H_Blank1_n of described test control sheet before carrying out described polishing respectively, finish thickness T H_Blank2_n and actual polishing time T-Blank_n after the described polishing;
3) draw the actual polishing speed RR11_n of described test control sheet respectively by following formula:
RR11_n＝(TH_Blank1_n-TH_Blank2_n)/T_Blank_n，
n＝1，2，3，4，...
And the mean value of calculating RR11_n is as the polishing speed RR11 of described test control sheet;
4) at least 4 polished wafers of random choose from described first batch of polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described first batch of polished batch wafers;
5) the target polished speed RR10 and the target thickness Pre0 of described first batch of polished batch wafers before carrying out described polishing of the described test control sheet of collection;
6) model of the reference lower limit value Ctrl1 of the described first batch of polished batch wafers polishing time of foundation calculating and reference upper level value Ctrl2 is as follows:
Ctrl1＝T1+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Ctrl2＝T2+(RR10-RR11)*K2+(Pre1-Pre0)*K3
Wherein, T1 is 40～50 seconds, and T2 is 60～70 seconds; K2 is 0.075～0.175 second branch/dust, and K3 is 0.01～0.03 a second/dust; Then
7) obtain the lower limit T_min and the higher limit T_max of the polishing time of described first batch of polished batch wafers in polishing process according to following mode:
If Ctrl1＜Ctrl1
R, T_min=Ctrl1 then
R, otherwise, T_min=Ctrl1;
If Ctrl2＜Ctrl2
R, T_max=Ctrl2 then, otherwise, T_max=Ctrl2
R
Wherein, described Ctrl1
RUnit be second, described Ctrl2
RUnit be second, the unit of described Ctrl1 is second, the unit of described Ctrl2 is second, and the unit of described TH_Blank1_n is a dust, and the unit of described TH_Blank2_n is a dust, the unit of described T_Blank_n is a branch, the unit of described RR11_n be dust/minute, the unit of described RR11 be dust/minute, the unit of described RR10 be dust/minute, the unit of described Pre1 is a dust, and the unit of described Pre0 is a dust.
2. method according to claim 1 is characterized in that, the described time range that is limited by described initial lower limit and described initial higher limit is the described time range that covers the described polishing time of the described wafer more than 95% in the described historical time section.
3. method according to claim 1 is characterized in that, T1 is 45 seconds.
4. method according to claim 1 is characterized in that, T2 is 65 seconds.
5. method according to claim 1 is characterized in that, K2 is 0.125 second branch/dust.
6. method according to claim 1 is characterized in that, K3 is 0.02 a second/dust.
7. method that is used for dynamically adjusting the event horizon of chemically mechanical polishing may further comprise the steps:
1) polishing time of the interior all wafers of collection historical time section P '; The initial lower limit Ctrl1 of the polishing time of determining current polished batch wafers according to the quantity and the described polishing time of described wafer
R' and initial higher limit Ctrl2
R', wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 polished wafers in a collection of wafer in the past; Collect the thickness T H1_n ' of described polished wafer before carrying out described polishing respectively, finish thickness T H2_n ' and actual polishing time T_n ' after the described polishing;
3) draw the actual polishing speed RR21_n ' of described polished wafer respectively by following formula:
RR21_n’＝(TH1_n’-TH2_n’)/T_n’，
n＝1，2，3，4，...
And the mean value of calculating RR21_n ' is as the polishing speed RR21 ' of described last batch wafers;
4) at least 4 polished wafers of random choose from described current polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 ' before the described polishing as described current polished batch wafers;
5) the target polished speed RR20 ' and the target thickness Pre0 ' of described current polished batch wafers before carrying out described polishing of the described last batch wafers of collection;
6) model of the reference lower limit value Ctrl1 ' of the described current polished batch wafers polishing time of foundation calculating and reference upper level value Ctrl2 ' is as follows:
Ctrl1’＝T3’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Ctrl2’＝T4’+(RR20’-RR21’)*K1’+(Pre1’-Pre0’)*K3’
Wherein, T3 ' is 37～47 seconds, and T4 ' is 61～71 seconds; K1 ' is 0.012～0.032 second branch/dust, and K3 ' is 0.01～0.03 a second/dust; Then
7) obtain the lower limit T_min ' and the higher limit T-max ' of the polishing time of described current polished batch wafers in polishing process according to following mode:
If Ctrl1 '＜Ctrl1
R', T_min '=Ctrl1 then
R', otherwise, T_min '=Ctrl1 ';
If Ctrl2 '＜Ctrl2
R', T_max '=Ctrl2 ' then; Otherwise, T_max '=Ctrl2
R';
Wherein said Ctrl1
R' unit be second, described Ctrl2
R' unit be second, the unit of described Ctrl1 ' is second, the unit of described Ctrl2 ' is second, and the unit of described TH1_n ' is a dust, and the unit of described TH2_n ' is a dust, the unit of described T_n ' is a branch, the unit of described RR21_n ' be dust/minute, the unit of described RR21 ' be dust/minute, the unit of described RR20 ' be dust/minute, the unit of described Pre1 ' is a dust, and the unit of described Pre0 ' is a dust.
8. method according to claim 7, it is characterized in that the described time range that is limited by described initial lower limit and described initial higher limit is the described time range that covers the described actual polishing time of the described wafer more than 95% in the described historical time section.
9. method according to claim 7 is characterized in that, T3 ' is 42 seconds.
10. method according to claim 7 is characterized in that, T4 ' is 66 seconds.
11. method according to claim 7 is characterized in that, K1 ' is 0.022 second branch/dust.
12. method according to claim 7 is characterized in that, K3 ' is 0.02 a second/dust.
13. a method that is used for dynamically adjusting the event horizon of chemically mechanical polishing may further comprise the steps:
1) collect historical time section P " polishing time of interior all wafers; The initial lower limit Ctrl1 of the polishing time of determining first batch of polished batch wafers according to the quantity and the described polishing time of described wafer
R" and initial higher limit Ctrl2
R", wherein, the time range that is limited by described initial lower limit and described initial higher limit is the time range that covers the described polishing time of the described wafer more than 80% in the described historical time section;
2) select at least 4 built-in testing control sheets and described test control sheet polished; Collect the thickness T H_Blank1_n of described test control sheet before carrying out described polishing respectively ", finish the thickness T H_Blank2_n after the described polishing " and actual polishing time T_Blank_n ";
3) draw the actual polishing speed RR11_n of described test control sheet respectively by following formula ":
RR11_n”＝(TH_Blank1_n”-TH_Blank2_n”)/T_Blank_n”，
n＝1，2，3，4，...
And calculate RR11_n " mean value as the polishing speed RR11 of described test control sheet ";
4) at least 4 polished wafers of random choose from described first batch of polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described first batch of polished batch wafers ";
5) the target polished speed RR10 of the described test control sheet of collection " and the target thickness Pre0 of described first batch of polished batch wafers before carrying out described polishing ";
6) set up to calculate the reference lower limit value Ctrl1 of described first batch of polished batch wafers polishing time " and reference upper level value Ctrl2 " model as follows:
Ctrl1”＝T1”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Ctrl2”＝T2”+(RR10”-RR11”)*K2”+(Pre1”-Pre0”)*K3”
Wherein, T1 " be 40～50 seconds, T2 " be 60～70 seconds; K2 " be 0.075～0.175 second branch/dust, K3 " be 0.01～0.03 second/dust; Then
7) obtain the lower limit T_min of the polishing time of described first batch of polished batch wafers in polishing process according to following mode " and higher limit T_max ":
If Ctrl1 "＜Ctrl1
R", T_min then "=Ctrl1
R", otherwise, T_min "=Ctrl1 ";
If Ctrl2 "＜Ctrl2
R", T_max then "=Ctrl2 ", otherwise, T_max "=Ctrl2
R";
Wherein said Ctrl1
R" unit be second, described Ctrl2
R" unit be second; described Ctrl1 " unit be second, described Ctrl2 " unit be second, described TH_Blankl_n " unit be dust, described TH_Blank2_n " unit be dust; described T_Blank_n " unit be branch, described RR11_n " unit be dust/minute, described RR11 " unit be dust/minute, described RR10 " unit be dust/minute; described Pre1 " unit be dust, described Pre0 " unit be dust;
8) for second batch and follow-up polished batch wafers, select at least 4 polished wafers in a collection of wafer in the past; Collect the thickness T H1_n of described polished wafer before carrying out described polishing respectively " ', finish the thickness T H2_n after the described polishing " ' and actual polishing time T_n " ';
9) draw the actual polishing speed RR21_n of described polished wafer respectively by following formula " ':
RR21_n”’＝(TH1_n”’-TH2_n”’)/T_n”’，
n＝1，2，3，4，...
And calculate RR21_n " ' mean value as the polishing speed RR21 of described last batch wafers " ';
10) at least 4 polished wafers of random choose from described current polished batch wafers, the arithmetic mean of instantaneous value that calculates the actual (real) thickness of described polished wafer before carrying out described polishing is carrying out thickness Pre1 before the described polishing as described current polished batch wafers " ';
11) the target polished speed RR20 of the described last batch wafers of collection " ' and the target thickness Pre0 of described current polished batch wafers before carrying out described polishing " ';
12) set up calculating the reference lower limit value Ctrl1 of described current polished batch wafers polishing time " model of ' and reference upper level value Ctrl2 " ' is as follows:
Ctrl1”’＝T3”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Ctrl2”’＝T4”’+(RR20”’-RR21”’)*K1”’+(Pre1”’-Pre0”’)*K3”’
Wherein, T3 " ' be 37～47 seconds, T4 " ' be 61～71 seconds; K1 " ' be 0.012～0.032 second branch/dust, K3 " ' be 0.01～0.03 second/dust; Then
13) obtain the lower limit T_min of the polishing time of described current polished batch wafers in polishing process according to following mode " ' and higher limit T_ max " ':
If Ctrl1 " '＜Ctrl1
R", T_min then " '=Ctrl1
R", otherwise, T_min " '=Ctrl1 " ';
If Ctrl2 " '＜Ctrl2
R", T_max then " '=Ctrl2 " '; Otherwise, T_max " '=Ctrl2
R";
Wherein said Ctrl1 " ' unit be second; described Ctrl2 " ' unit be second, described TH_n " ' unit be dust; described TH2_n " ' unit be dust, described T_n " ' unit be branch, described RR21_n " ' unit be dust/minute, described RR21 " ' unit be dust/minute; described RR20 " ' unit be dust/minute, described Pre1 " ' unit be dust, described Pre0 " ' unit be dust.
14. method according to claim 13 is characterized in that, the described time range that is limited by described initial lower limit and described initial higher limit is the described time range that covers the described polishing time of the described wafer more than 95% in the described historical time section.
15. method according to claim 13 is characterized in that, T1 " be 45 seconds.
16. method according to claim 13 is characterized in that, T2 " be 65 seconds.
17. method according to claim 13 is characterized in that, K2 " be 0.125 second branch/dust.
18. method according to claim 13 is characterized in that, K3 " be 0.02 second/dust.
19. method according to claim 13 is characterized in that, T3 " ' be 42 seconds.
20. method according to claim 13 is characterized in that, T4 " ' be 66 seconds.
21. method according to claim 13 is characterized in that, K1 " ' be 0.022 second branch/dust.
22. method according to claim 13 is characterized in that, K3 " ' be 0.02 second/dust.
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| US20200083057A1 (en) * | 2018-09-10 | 2020-03-12 | Globalwafers Co., Ltd. | Methods for polishing semiconductor substrates that adjust for pad-to-pad variance |
| US11081359B2 (en) * | 2018-09-10 | 2021-08-03 | Globalwafers Co., Ltd. | Methods for polishing semiconductor substrates that adjust for pad-to-pad variance |
| CN109664199A (en) * | 2019-01-11 | 2019-04-23 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | A kind of optimization method and device of chemically mechanical polishing |
| CN111266990A (en) * | 2020-03-16 | 2020-06-12 | 上海华力微电子有限公司 | Method and device for setting upper limit and lower limit of grinding time |
| CN111266990B (en) * | 2020-03-16 | 2022-01-28 | 上海华力微电子有限公司 | Method and device for setting upper limit and lower limit of grinding time |
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