CN100496891C - Method for detecting chemical and mechanical flattening endpoint - Google Patents
Method for detecting chemical and mechanical flattening endpoint Download PDFInfo
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- CN100496891C CN100496891C CNB2006100299201A CN200610029920A CN100496891C CN 100496891 C CN100496891 C CN 100496891C CN B2006100299201 A CNB2006100299201 A CN B2006100299201A CN 200610029920 A CN200610029920 A CN 200610029920A CN 100496891 C CN100496891 C CN 100496891C
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Abstract
A chemical-mechanical flattening end-point detection method comprises that basic end-point detection is implemented only with the flattening velocity of the sample film; on the basis of the basic end-point detection results, the actual end-point detection process is divided into a first and second steps; a first flattening velocity and a second flattening velocity are set in the actual end-point detection process; the first step is implemented with the first flattening velocity and the second step is implemented with the second flattening velocity; carry out the first and second steps in sequence and complete the actual end-point detection. With the end-point detection method, the detection reliability can be ensured and the end-point detection time can be shortened; at the same time, themethod is characterized by wide application range.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method for detecting chemical and mechanical flattening endpoint.
Background technology
Chemical-mechanical planarization (Chemical Mechanical Planarization is the surperficial planarization of a kind of overall situation CMP), in semiconductor fabrication in order to the variation that reduces wafer thickness and the influence of surface topography.Because CMP can be accurately and equably smooth thickness and the flatness that needs that turn to of wafer, become most widely used a kind of having an even surface technology in the semiconductor fabrication.
In the actual production process, adopt end point determination to weigh CMP and whether material is ground to desired thickness.It is simple that some CMP uses end point determination, has different planarization speed owing to tungsten with following dielectric layer storeroom during as planarization tungsten cover layer, planarization process can stop at dielectric layer material place, and at this moment, dielectric layer exists as the stop layer of metal tungsten layer planarization.But for the planarization process of no stop layer, utilize in-situ endpoint detection to remedy the planarization rate variations usually and provide planarization inhomogeneity detection.Two kinds of existing the most frequently used in-situ endpoint detection methods are current of electric end point determination method and optical end point detection method.
Current of electric end point determination method is by detecting the magnitude of current monitoring planarization speed in bistrique or the rotary tray motor.The variation of planarization amount (being motor load) can cause the variation of current of electric amount, because bistrique at the uniform velocity rotates, is the variation of small electromotor load, and the current of electric amount has respective change, and promptly current of electric is responsive to the variation of wafer surface degree of roughness.Thus, the variation by the current of electric amount can provide planarization inhomogeneity detection; The optical end point detection method is a kind of end-point detection method based on light reflection principle, light is relevant with film material and thicknesses of layers from the different angles that rete reflects, if detecting, film material varied in thickness, optical end point can measure from the ultraviolet light of planarization rete reflection or the interference between the visible light.Utilize the interference signal Processing Algorithm to measure the variation of thicknesses of layers in the planarization continuously, can measure planarization speed.
The end point determination image schematic diagram of Fig. 1 for obtaining for the existing method of application, as shown in Figure 1, described end point determination parameter comprises current of electric amount and optical signalling processing parameter.End point determination curve 60 is divided into a, b and c section.Correspondingly, smoothing material layer 10 surface are divided into nan orelief layer 30, fluctuating growth layer 40 and conforming layer 50.Fig. 2 smoothing material structure cutaway view, as depicted in figs. 1 and 2, a section is a polymodal curve in the end point determination curve, respectively the planarization process of each small fluctuating of corresponding nan orelief laminar surface; The b section is a unimodal curve in the end point determination curve, and corresponding the fluctuating increases the overall process of layer planarization, and corresponding smoothing material surface, peak of curve place reaches the end point determination parameter value of planarization initial stage correspondence; The smoothing material that the c section is described planarization in the end point determination curve is processed to the process of desired thickness.Obviously, the main body of smoothing material CMP end point determination is the b section in the end point determination curve, only detects in the b section in the end point determination curve unimodally, could illustrate that the CMP end point determination finishes substantially.But, utilize existing method to carry out end point determination, the actual end point determination curve that obtains comprises a and b section at least, owing to have the many places peak value in a section of corresponding nan orelief layer planarization detection curve, and in the end point determination process, detected end point determination curve is shown as in good time curve, can't confirm that the detection peak that obtains is unimodal value in one of multi-peak in a section curve or the b section actually, it is inaccurate easily to cause the terminal point peak value to judge, has promptly finished end point determination when not reaching endpoint detection.
Application number is for providing a kind of shallow trench isolation of two end point determination of using from (Shallow Trench Isolation, STI) technology CMP end-point detection method in the Chinese patent application of " 200310108838.4 ".This method is to avoid the generation of flase drop, adopts twice end point determination process to carry out end point determination.Be specially: utilize the first end point determination result to determine for first detection time, i.e. smoothing material nan orelief layer end point determination required time; And then carry out second end point determination, second detection time, the detected image that records can accurately embody the end point determination result when being longer than for first detection time.But when using this method and carrying out end point determination, not constituting the time that the planarization of the material nan orelief layer of end point determination main body consumes occupies larger proportion in general planarization in the time, makes the CMP process consuming time longer, is unfavorable for the raising of production efficiency.Thus, provide a kind of and both can guarantee the end point determination reliability, the end-point detection method that can shorten the end point determination consumption time again is called those skilled in the art's problem demanding prompt solution.
Summary of the invention
The invention provides a kind of CMP end-point detection method, can when carrying out end point determination, can guarantee the end point determination reliability, can shorten end point determination again and consume the time.
A kind of method for detecting chemical and mechanical flattening endpoint provided by the invention comprises:
Utilize print, carry out primaryend point with single planarization speed and detect;
According to the primaryend point testing result actual end point determination process is divided into the first step and second step;
In actual end point determination process, set the first planarization speed and the second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed;
Order is carried out the first step and second step,, finish actual end point determination.
Described smoothing material comprises the nan orelief layer, rising and falling increases layer and conforming layer; Described first step comprises the nan orelief layer is carried out end point determination; Described second step comprises the end point determination behind the first step.
The described method that the end point determination process is divided into the first step and second step comprises:
Determine smoothing material surface undulation height and single planarization speed, and calculate primaryend point and detect total time;
Detect total time according to primaryend point, obtain corresponding nan orelief layer primaryend point detection time;
Utilize nan orelief layer primaryend point detection time, calculate the nan orelief layer thickness;
According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual end point determination time of layer;
With the actual end point determination time of the lasting described nan orelief layer of the first planarization speed, carry out described first step;
After described first step is finished, carry out described second step.
The method of described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer primaryend point detection time and single planarization speed; The method of described calculating nan orelief layer thickness comprises: after calculating the ratio of nan orelief actual end point determination time of layer and end point determination total time, calculate the product of described ratio and smoothing material surface undulation height again.
The described first planarization speed is greater than the described second planarization speed.
Described end point determination process comprises:
Continue the nan orelief layer actual end point determination time with the first planarization speed, implement first step; With the second planarization speed, finish second step.
A kind of chemical mechanical planarization method provided by the invention comprises:
Utilize print, carry out basic planarization operation with single planarization speed, and carry out primaryend point and detect;
According to the primaryend point testing result actual planarization operating process is divided into the first step and second step;
In actual planarization operating process, set the first planarization speed and the second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed;
Order is carried out the first step and second step, finishes actual planarization operation.
Described smoothing material comprises the nan orelief layer, rising and falling increases layer and conforming layer; Described first step comprises that the nan orelief layer is carried out planarization to be operated; Described second step comprises the planarization operation behind the first step.
The described method that planarization process is divided into the first step and second step comprises:
Determine smoothing material surface undulation height and single planarization speed, and calculate basic planarization total time;
According to basic planarization total time, obtain the corresponding nan orelief layer basis planarization time;
Utilize the nan orelief layer basis planarization time, calculate the nan orelief layer thickness;
According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual planarization time of layer;
Continue the described nan orelief layer actual planarization time with the first planarization speed, carry out described first step;
After described first step is finished, carry out described second step.
The method of described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer basis planarization time and single planarization speed; The method of described calculating nan orelief layer thickness comprises: after calculating the ratio of nan orelief layer basis planarization time and basic planarization total time, calculate the product of described ratio and smoothing material surface undulation height again.
The described first planarization speed is greater than the described second planarization speed.
Described planarization process comprises:
Continue the nan orelief layer actual planarization time with the first planarization speed, implement first step; With the second planarization speed, finish second step.
Compared with prior art, the present invention has the following advantages:
1. by original CMP end point determination is divided into the first step and second step, and make the end point determination main body only relate to second step, be easy to judge the end point determination deadline, avoided the generation of flase drop, improved the reliability of end point determination;
2. by the first step and second step are set the first planarization speed and the second planarization speed respectively, first step is implemented quick end point determination, and can adopt normal process to carry out end point determination to second step, having reduced the CMP process consumes the time, has improved production efficiency;
3. the present invention is not only applicable to CMP end point determination in the STI technology, also is applicable to the flatening process of the semiconductor each several part structure that comprises each dielectric layer and metal level, has the scope of application widely.
Description of drawings
Fig. 1 is for using the end point determination image schematic diagram that existing method obtains;
Fig. 2 is a smoothing material structure cutaway view;
Fig. 3 is the smoothing material structure cutaway view of explanation the inventive method first embodiment;
Fig. 4 is the end point determination image schematic diagram of explanation the inventive method first embodiment;
Fig. 5 is the smoothing material structure cutaway view of explanation the inventive method second embodiment;
Fig. 6 is the end point determination image schematic diagram of explanation the inventive method second embodiment;
Fig. 7 is the smoothing material structure cutaway view of explanation the inventive method the 3rd embodiment;
Fig. 8 is the end point determination image schematic diagram of explanation the inventive method the 3rd embodiment;
Wherein: same structure indicates with same label;
10: the smoothing material layer; 20 dielectric layers;
21: through hole; 30: the nan orelief layer;
40: rising and falling increases layer; 41: the surface undulation minimum point;
50: conforming layer; 60: the primaryend point detection curve;
61: the end point determination curve; 70: metal level;
71: the metal level slit; 80: shallow trench;
90: substrate.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.For avoiding causing unnecessary beyonding one's depth, omitted known technological operation in the embodiment explanation of this paper and described.
It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
The implementation step that application the inventive method is carried out the CMP end point determination is: at first, utilize print, carry out primaryend point with single planarization speed and detect; Then, according to the primaryend point testing result actual end point determination process is divided into the first step and second step; Subsequently, in actual end point determination process, set the first planarization speed and the second planarization speed; Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed; At last, order is carried out the first step and second step, finishes actual end point determination.
As the first embodiment of the present invention, the concrete implementation step that application the inventive method is carried out dielectric layer CMP end point determination is:
At first, utilize print, carry out primaryend point with single planarization speed and detect.
Described primaryend point detects the end point determination for utilizing prior art that print is carried out.The end point determination image that obtains as shown in Figure 2.The end point determination that the method that hereinafter application be the invention provides is carried out is called actual end point determination.
Fig. 3 is the smoothing material structure cutaway view of explanation the inventive method first embodiment, and as shown in Figure 3, described dielectric layer 20 is filled the interior slit 71 of metal level and covered metal level 70 surface area.The dielectric layer 20 of described covering metal level surface area comprises nan orelief layer 30, rising and falling increases layer 40 and conforming layer 50, and as embodiments of the invention, described nan orelief layer is defined as the smoothing material layer of a section in the corresponding primaryend point detection curve.Described fluctuating increases layer and is positioned at top, plane, surface undulation minimum point 41 place and below, nan orelief layer bottom surface; Described conforming layer is ground to the part dielectric layer of the required grinding of required thickness for general's dielectric layer of planarization; Described uniform layer thickness correspondence is the dielectric layer surface thickness of planarization and the difference on desired thickness dielectric layer surface.Described difference can be any reasonable value in each the thickness of dielectric layers scope that occurs in the production process, as: 20 nanometers, 80 nanometers or 500 nanometers etc.
Then, according to the primaryend point testing result actual end point determination process is divided into the first step and second step.
The described method that the end point determination process is divided into the first step and second step is: determine smoothing material surface undulation height and single planarization speed, and calculate primaryend point detection total time; Detect total time according to primaryend point, obtain corresponding nan orelief layer primaryend point detection time; Utilize nan orelief layer primaryend point detection time, calculate the nan orelief layer thickness; According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual end point determination time of layer; With the actual end point determination time of the lasting described nan orelief layer of the first planarization speed, carry out described first step; After described first step is finished, carry out described second step.
The method of described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer primaryend point detection time and single planarization speed, perhaps, after calculating nan orelief layer primaryend point detection time and the primaryend point ratio of detection total time, calculate the product of described ratio and dielectric layer surface undulation height again.
Subsequently, in actual end point determination process, set the first planarization speed and the second planarization speed; Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed.
For reducing the end point determination required time, to enhance productivity, need the nan orelief layer is carried out quick planarization, and can adopt common process to carry out planarization rise and fall growth layer and conforming layer, the promptly described first planarization speed is greater than the described second planarization speed; The described first planarization speed is greater than above-mentioned single planarization speed; The concrete numerical value of the described first planarization speed and the second planarization speed is determined according to process conditions and production requirement.
At last, order is carried out the first step and second step, finishes actual end point determination.
The described detailed process of finishing actual end point determination is: continue the nan orelief layer actual end point determination time with the first planarization speed, carry out first step; With the second planarization speed, finish second step.
Fig. 4 is the end point determination image schematic diagram of explanation the inventive method first embodiment, and as shown in Figure 4, described primaryend point detection curve is divided into a
1, b
1And c
1Section.
A in the end point determination curve 61
1The planarization process of each nan orelief of the corresponding nan orelief laminar surface of section; B in the end point determination curve
1Section is a unimodal curve, and corresponding the fluctuating increases the overall process of layer planarization, and corresponding dielectric layer surface, peak of curve place reaches the end point determination parameter value of planarization initial stage correspondence; C in the end point determination curve
1The dielectric layer of describing planarization is processed to the process of desired thickness.
As the second embodiment of the present invention, use the inventive method carry out shallow trench isolation from (ShallowTrench Isolation, STI) the concrete implementation step of CMP end point determination of district's packing material is:
At first, utilize print, carry out primaryend point with single planarization speed and detect.
Fig. 5 is the smoothing material structure cutaway view of explanation the inventive method second embodiment, as shown in Figure 5,
Non-trench area surface coverage dielectric layer 20 materials in described shallow trench 80 inside and the substrate 90; Described substrate 90 comprises Semiconductor substrate and goes up separation layer and barrier layer; The dielectric layer 20 on non-trench area surface comprises nan orelief layer 30 in the described covering substrate 90, rising and falling increases layer 40 and conforming layer 50, and as embodiments of the invention, described nan orelief layer is defined as the smoothing material layer of a section in the corresponding primaryend point detection curve.Described fluctuating increases layer and is positioned at top, 41 planes, surface undulation minimum point place and below, nan orelief layer bottom surface; Described conforming layer is ground to the part dielectric layer of the required grinding of required thickness for general's dielectric layer of planarization; Described uniform layer thickness correspondence is the dielectric layer surface thickness of planarization and the difference on desired thickness dielectric layer surface.Described difference can be any reasonable value in each the thickness of dielectric layers scope that occurs in the production process, as: 20 nanometers, 80 nanometers or 200 nanometers etc.
Then, according to the primaryend point testing result actual end point determination process is divided into the first step and second step.
The described method that the end point determination process is divided into the first step and second step is: determine smoothing material surface undulation height and single planarization speed, and calculate primaryend point detection total time; Detect total time according to primaryend point, obtain corresponding nan orelief layer primaryend point detection time; Utilize nan orelief layer primaryend point detection time, calculate the nan orelief layer thickness; According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual end point determination time of layer; With the actual end point determination time of the lasting described nan orelief layer of the first planarization speed, carry out described first step; After described first step is finished, carry out described second step.
The method of described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer basis planarization time and single planarization speed, perhaps, after calculating nan orelief layer primaryend point detection time and the primaryend point ratio of detection total time, calculate the product of described ratio and layer on surface of metal fluctuating height again.
Subsequently, in actual end point determination process, set the first planarization speed and the second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed.
For reducing the end point determination required time, to enhance productivity, need the nan orelief layer is carried out quick planarization, and can adopt common process to carry out planarization rise and fall growth layer and conforming layer, the promptly described first planarization speed is greater than the described second planarization speed.The concrete numerical value of the described first planarization speed and the second planarization speed is determined according to process conditions and production requirement.
At last, order is carried out the first step and second step, finishes actual end point determination.
The described detailed process of finishing actual end point determination is: continue the nan orelief layer actual planarization time with the first planarization speed, carry out first step; With the second planarization speed, finish second step.
Fig. 6 is the end point determination image schematic diagram of explanation the inventive method second embodiment, and as shown in Figure 6, described primaryend point detection curve is divided into a
2, b
2And c
2Section.
A in the end point determination curve 61
2The planarization process of each nan orelief of the corresponding nan orelief laminar surface of section; B in the end point determination curve
2Section is a unimodal curve, and corresponding the fluctuating increases the overall process of layer planarization, and corresponding dielectric layer surface, peak of curve place reaches the end point determination parameter value of planarization initial stage correspondence; C in the end point determination curve
2The dielectric layer that section is described planarization is processed to the process of desired thickness.
As the third embodiment of the present invention, the concrete implementation step of using the inventive method metal level CMP end point determination is:
At first, utilize print, carry out primaryend point with single planarization speed and detect.
Fig. 7 is the smoothing material structure cutaway view of explanation the inventive method the 3rd embodiment, as shown in Figure 7, and described metal level 70 blanket dielectric layer 20 and inner via hole 21 surfaces thereof; The metal level 70 on described blanket dielectric layer 20 and inner via hole 21 surfaces thereof comprises nan orelief layer 30, rising and falling increases layer 40 and conforming layer 50.Described fluctuating increases layer and is positioned at top, 41 planes, surface undulation minimum point place and below, nan orelief layer bottom surface; Described conforming layer is ground to the part metals layer of the required grinding of required thickness for general's metal level of planarization; Described uniform layer thickness correspondence is the layer on surface of metal thickness of planarization and the difference of desired thickness layer on surface of metal.Described difference can be any reasonable value in each the metal layer thickness scope that occurs in the production process, as: 2 nanometers, 5 nanometers or 10 nanometers etc.
Then, according to the primaryend point testing result actual end point determination process is divided into the first step and second step.
The described method that the end point determination process is divided into the first step and second step is: determine smoothing material surface undulation height and single planarization speed, and calculate primaryend point detection total time; Detect total time according to primaryend point, obtain corresponding nan orelief layer primaryend point detection time; Utilize nan orelief layer primaryend point detection time, calculate the nan orelief layer thickness; According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual end point determination time of layer; With the actual end point determination time of the lasting described nan orelief layer of the first planarization speed, carry out described first step; After described first step is finished, carry out described second step.
The method of described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer basis planarization time and single planarization speed, perhaps, after calculating nan orelief layer primaryend point detection time and the primaryend point ratio of detection total time, calculate the product of described ratio and layer on surface of metal fluctuating height again.
Subsequently, in actual end point determination process, set the first planarization speed and the second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed.
For reducing the end point determination required time, to enhance productivity, need the nan orelief layer is carried out quick planarization, and can adopt common process to carry out planarization rise and fall growth layer and conforming layer, the promptly described first planarization speed is greater than the described second planarization speed.The concrete numerical value of the described first planarization speed and the second planarization speed is determined according to process conditions and production requirement.
At last, order is carried out the first step and second step, finishes actual end point determination.
The described detailed process of finishing actual end point determination is: continue the nan orelief layer actual planarization time with the first planarization speed, carry out first step; With the second planarization speed, finish second step.
Fig. 8 is the end point determination image schematic diagram of explanation the inventive method the 3rd embodiment, and as shown in Figure 8, described primaryend point detection curve is divided into a
3, b
3And c
3Section.
A in the end point determination curve 61
3The planarization process of each nan orelief of the corresponding nan orelief laminar surface of section; B in the end point determination curve
3Section is a unimodal curve, and corresponding the fluctuating increases the overall process of layer planarization, and the corresponding layer on surface of metal in peak of curve place reaches the end point determination parameter value of planarization initial stage correspondence; C in the end point determination curve
3The metal level that section is described planarization is processed to the process of desired thickness.
The particular embodiment that the foregoing description is just chosen for explanation the inventive method; its smoothing material that relates to can be the random layer material of containing in the semiconductor structure; obviously; the semiconductor planarization technology that comprises each dielectric layer and metal level all is suitable for the inventive method, all should fall within the protection domain of the inventive method.
Adopt the inventive method, by original CMP end point determination is divided into the first step and second step, and make the end point determination main body only relate to second step, be easy to judge the end point determination deadline, avoided the generation of flase drop, improved the reliability of end point determination; By the first step and second step are set the first planarization speed and the second planarization speed respectively, first step is implemented quick end point determination, and can adopt normal process to carry out end point determination to second step, having reduced the CMP process consumes the time, has improved production efficiency; The present invention is not only applicable to CMP end point determination in the STI technology, also is applicable to the semiconductor planarization technology that comprises each dielectric layer and metal level, has the scope of application widely.
Obviously, CMP terminal point end point determination must be accompanied by the carrying out of CMP process.CMP end-point detection method provided by the invention is equally applicable to the improvement of CMP process.Each specific embodiment that " planarization process " can constitute the inventive method be replaced by in term in the foregoing description " end point determination ", do not repeat them here.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (8)
1. method for detecting chemical and mechanical flattening endpoint with to comprising the nan orelief layer, carrying out end point determination when the smoothing material that increases layer and conforming layer of rising and falling is carried out the chemical-mechanical planarization operation, comprising:
Utilize print, carry out primaryend point with single planarization speed and detect;
According to the primaryend point testing result actual end point determination process is divided into the first step and second step, described first step comprises the nan orelief layer is carried out end point determination; Described second step comprises the end point determination behind the first step;
Set the first planarization speed and the second planarization speed in actual end point determination process, the described first planarization speed is greater than the described second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed;
Order is carried out the first step and second step, finishes actual end point determination.
2. end-point detection method according to claim 1 is characterized in that: the described method that actual end point determination process is divided into the first step and second step comprises:
Determine smoothing material surface undulation height and single planarization speed, and calculate primaryend point and detect total time;
Detect total time according to primaryend point, obtain corresponding nan orelief layer primaryend point detection time;
Utilize nan orelief layer primaryend point detection time, calculate the nan orelief layer thickness;
According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual end point determination time of layer;
With the actual end point determination time of the lasting described nan orelief layer of the first planarization speed, carry out described first step;
After described first step is finished, carry out described second step.
3. end-point detection method according to claim 2 is characterized in that: the method for described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer primaryend point detection time and single planarization speed.
4. end-point detection method according to claim 2, it is characterized in that: the method for described calculating nan orelief layer thickness comprises: after calculating the ratio of nan orelief actual end point determination time of layer and end point determination total time, calculate the product of described ratio and smoothing material surface undulation height again.
5. chemical mechanical planarization method, with to comprise the nan orelief layer, the smoothing material that increases layer and conforming layer that rises and falls carries out the chemical-mechanical planarization operation, comprising:
Utilize print, carry out basic planarization operation with single planarization speed, and carry out primaryend point and detect;
According to the primaryend point testing result actual planarization operating process is divided into the first step and second step, described first step comprises that the nan orelief layer is carried out planarization to be operated; Described second step comprises the planarization operation behind the first step;
Set the first planarization speed and the second planarization speed in actual planarization operating process, the described first planarization speed is greater than the described second planarization speed;
Carry out first step with the described first planarization speed; Carry out second step with the described second planarization speed;
Order is carried out the first step and second step, finishes actual planarization operation.
6. chemical mechanical planarization method according to claim 5 is characterized in that: the described method that actual planarization process is divided into the first step and second step comprises:
Determine smoothing material surface undulation height and single planarization speed, and calculate basic planarization total time;
According to basic planarization total time, obtain the corresponding nan orelief layer basis planarization time;
Utilize the nan orelief layer basis planarization time, calculate the nan orelief layer thickness;
According to the nan orelief layer thickness and the first planarization speed, calculate the nan orelief actual planarization time of layer;
Continue the described nan orelief layer actual planarization time with the first planarization speed, carry out described first step;
After described first step is finished, carry out described second step.
7. chemical mechanical planarization method according to claim 6 is characterized in that: the method for described calculating nan orelief layer thickness comprises: the product that calculates nan orelief layer basis planarization time and single planarization speed.
8. chemical mechanical planarization method according to claim 6, it is characterized in that: the method for described calculating nan orelief layer thickness comprises: after calculating the ratio of nan orelief layer basis planarization time and basic planarization total time, calculate the product of described ratio and smoothing material surface undulation height again.
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| CN107571141B (en) * | 2017-08-18 | 2019-03-05 | 清华大学 | Offline debugging system and method for CMP process end point determination |
| CN108555771A (en) * | 2018-04-25 | 2018-09-21 | 清华大学 | The terminal of CMP tool determines that method, terminal determine system and CMP system |
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