CN109968186A - The online end-point detection method of chemically mechanical polishing based on spectrum - Google Patents
The online end-point detection method of chemically mechanical polishing based on spectrum Download PDFInfo
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- CN109968186A CN109968186A CN201910440345.1A CN201910440345A CN109968186A CN 109968186 A CN109968186 A CN 109968186A CN 201910440345 A CN201910440345 A CN 201910440345A CN 109968186 A CN109968186 A CN 109968186A
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- 238000001514 detection method Methods 0.000 title claims abstract description 43
- 238000001228 spectrum Methods 0.000 title claims abstract description 40
- 238000005498 polishing Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000003595 spectral effect Effects 0.000 claims abstract description 14
- 238000001914 filtration Methods 0.000 claims abstract description 8
- 238000007517 polishing process Methods 0.000 claims abstract description 8
- 230000008033 biological extinction Effects 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses the online end-point detection methods of chemical-mechanical planarization based on spectrum.Theoretical spectral curve is calculated according to by the refractive index n, extinction coefficient k and target film thickness d of throwing film and base material first, then one section of wavelength region for choosing the curve calculates the corresponding wavelength value λ hi and corresponding wavelength number a of maximum point of all relative reflectance maximum points in the region, the corresponding wavelength value λ lk of relative reflectance minimum point and the corresponding wavelength number b of minimum point.Original spectral data in acquisition polishing process in real time, obtains filtering spectrum curve, chooses the correspondence parameter of the filtering spectrum curve regions of identical wavelength region, and calculate the difference value between two groups of data.If the value is less than preset threshold value, stop planarization process.The present invention can exclude detection light intensity signal variation bring interference, without doing normalized to detection spectrum, reduce operation time, while the detection accuracy of promotion signal and detection consistency.
Description
Technical field
The present invention relates to the apparatus fields of semiconductor integrated circuit chip manufacture, and in particular to a kind of chemically mechanical polishing is set
Online end-point detection method based on spectrum used in standby.
Background technique
With the rapid development of semiconductor industry, integrated circuit feature size constantly tends to miniaturize, and semiconductor wafer is not
Disconnectedly develop towards small size, high circuit closeness, quick, low power consumption direction, integrated circuit has entered ULSI submicron order
Technological phase.Along with being gradually increased for silicon wafer diameter, line width gradually reduces in element, and number of metal increases, because
The high polishing of this semiconductor film film surface has important influence, therefore silicon wafer to the high-performance, low cost, high finished product rate of device
Piece surface smoothness requires will be increasingly stringent.
Currently, as unique planarization techniques chemical Mechanical Polishing Technique that can obtain leveling effect, chemical machine
Tool polishing (CMP) has developed into the chemically mechanical polishing skill for integrating the technologies such as online measuring, online end point determination, cleaning
Art is the product that integrated circuit develops to miniaturization, multiple stratification, slimming, polishing process.Simultaneously be also wafer from 200mm to
300mm or even larger diameter transition improve productivity, reduce technology necessary to manufacturing cost, the polishing of the substrate overall situation.
During CMP process, if without effective end point determination (End Point Detection, EPD) technology,
It is easy for occurring the removal of wafer skin-material excessively or material removal is insufficient, therefore, how to judge whether CMP process reaches expectation
Terminal be CMP process urgent need to resolve difficult point, for effectively solved the problems, such as throw or deficient throwing have great importance.Especially
It is in field of nanometer technology, end point determination is particularly important.End point determination includes offline and online two kinds.End point determination is offline
The mode of polishing time is controlled in conjunction with pre-determined removal amount to determine polishing end point, the disadvantage is that crystalline substance cannot be avoided effectively
The problem that circle skin-material removal is excessive or material removal is insufficient, is mainly answered in processing of the diameter lower than 200mm wafer at present
With having been unable to meet the needs of current large diameter silicon wafers automation processing.The technology of mainstream is online end point determination at present,
Line end point determination can preferably control the thickness change of wafer film, reduce repetitive operation, realize the automatic operation of CMP,
To improve polissoir utilization rate and yield, the Density Distribution defect of IC equipment is reduced, reduces inhomogeneities, and finally makes half
The stability and reliability of conductor device are improved.The principle that online endpoint Detection is realized is mainly based upon optics, electricity
, acoustics or vibration, the detection of calorifics, frictional force, chemistry or electrochemical principle pass through and detect driving motor curent change, sound
Emit the variation of the parameters such as signal, polishing pad temperature, polishing fluid intermediate ion concentration to realize.
In above-mentioned online endpoint Detection, in view of polished material removal precision be nanoscale, how to exclude due to
Detection light intensity signal variation bring interference caused by mains fluctuations or other factors, returns to not have to do detection spectrum
One change processing, to reduce operation time, while the detection accuracy of promotion signal and detection consistency are one and have very much challenge
The technical problem of property.
Summary of the invention
Present invention aims at be directed to existing for existing line endpoint Detection vulnerable to mains fluctuations or other factors
Caused by detection light intensity signal variation bring interference, the increase problem of the operation time as caused by normalized proposes one
Online end-point detection method of the kind based on spectrum, with the detection accuracy of promotion signal and detection consistency.
To achieve the above object, the technical solution adopted by the present invention is that a kind of chemically mechanical polishing based on spectrum is whole online
Point detecting method, comprising the following steps:
S1: first according to by after the refractive index n of throwing film and base material, extinction coefficient k and the polishing wafer of setting
Film thickness d value calculates a theoretical curve of spectrum；
S2: wherein one section of wavelength region of theoretical spectral curve is chosen, following parameter is calculated: is all opposite in chosen area
Relative reflectance pole in the corresponding wavelength value λ hi of reflectivity maximum point and the corresponding wavelength number a of maximum point, chosen area
The corresponding wavelength value λ lk and corresponding wavelength number b of minimum point of small value point；
S3: in polishing process, acquiring original spectral data in real time, obtains a reflection relative reflectance and wavelength relationship
Original spectrum curve, and the curve of spectrum is filtered, obtain a smooth filtering spectrum curve；
S4: to the processing mode of theoretical spectral curve in reference step 2, the filtering spectrum curve of identical wavelength region is chosen
Region, and calculating: the corresponding wavelength value λ hi ' of all relative reflectance maximum points and maximum point are corresponding in chosen area
The corresponding wavelength value λ lk ' of relative reflectance minimum point and the corresponding wavelength of minimum point in wavelength number a ', chosen area
Number b '；
S5: next determining whether to meet a=a ' and b=b ', if not, return step S3；If so, calculate two groups of data it
Between difference value S；
S6: judging whether S is less than preset threshold value, if not, return step S3；If so, then illustrating chemical machinery
Polishing process reaches default purpose, and equipment stops polishing.
Further, preferably, d thickness range is between 0-5000nm described in above-mentioned steps 1.
Further, the base material in step 1 is generally monocrystalline silicon, but can be not limited to monocrystalline silicon, selects other industry
The common base material in boundary.In addition, being also not limited to by the calculation formula of throwing film and base material relative reflectanceOther formula can also be used, it is only exemplary herein.
In addition, refractive index n described in step 1 and extinction coefficient k can be measured by detecting instrument and be obtained, such as ellipsometer, wheel
Wide instrument, film thickness detector or other optical detecting instruments.
Preferably, the wavelength region is between 200-1100nm in above-mentioned steps 3.
In step 7, the filtering can be used Fast Fourier Transform (FFT) mode and complete, but be not limited to Fast Fourier Transform (FFT),
The methods of Gauss, least square, low pass, band logical, high pass, moving average or combinations thereof can also be with.
In addition, preferably, the method for calculating difference between two groups of data described in above-mentioned steps 5 is quadratic sum, i.e. S=
∑(λhi-λhi’)2+∑(λlk-λlk’)2。
Compared with existing online endpoint Detection, the present invention has following advantageous effects:
1, due to spectral detection signal vulnerable to mains fluctuations, external shock, light source and detected material detecting distance,
The influence of the factors such as the roughness and external environment on object to be detected surface be easy to cause the fluctuation of detection light intensity signal, directly
The relative reflectance fluctuation for showing as spectral signal, relative to general film thickness detection method, such as full spectrum simulation method, due to every
Light intensity value caused by the secondary actually detected curve of spectrum is influenced by above-mentioned various factors is inconsistent, will cause biggish detection and misses
Difference, and the present invention can exclude the detection light intensity signal variation bring interference as caused by the factors such as mains fluctuations.
2, light intensity normalization processing method is that every bit light intensity signal is obtained light intensity coefficient divided by maximum value and minimum value
Maximum value is all 1 curve of spectrum, but this method be easy to cause detection accuracy to reduce, and increases operation time, and normalization is also deposited
In error.The present invention does not have to do normalized to detection spectrum, reduces operation time, while the detection accuracy of promotion signal
With detection consistency.
Detailed description of the invention
Fig. 1 is the flow chart of the online end-point detection method of chemically mechanical polishing the present invention is based on spectrum；
Fig. 2 is by calculating the theoretical spectral curve synoptic diagram generated；
Fig. 3 is the schematic diagram of the theoretical spectral curve in a wavelength range region；
Fig. 4 is the schematic diagram marked after maximum and minimum and its corresponding wavelength to the curve of spectrum shown in Fig. 3；
Fig. 5 is the original spectrum curve graph of acquisition；
Fig. 6 is the schematic diagram after being filtered to original spectrum curve graph shown in Fig. 5；
Fig. 7 is the schematic diagram marked after maximum and minimum and its corresponding wavelength to the curve of spectrum shown in Fig. 6.
Specific embodiment
The invention will now be described in further detail with reference to the accompanying drawings.
The present invention is based on the flow chart of the online end-point detection method of chemically mechanical polishing of spectrum as shown in Figure 1, now in conjunction with
The attached drawing is illustrated online end-point detection method of the invention.
To implement the present invention convenient for those skilled in the art, it is as follows now to provide one embodiment:
A given thickness d is 500nm by throwing thin-film material SiO2, base material Si.It chooses and calculates theoretical spectrum
Wavelength region range is 200-800nm, wherein by throwing material SiO2And refractive index of the base material Si between 200-800nm
N, extinction coefficient k can be obtained by data check or measuring instrument detection.
It is assumed that working as SiO2Stop polishing process when film thickness d=400nm.
Firstly, according to above-mentioned by throwing material SiO2And refractive index n of the base material Si between 200-800nm, delustring system
Number k and setting thickness d=400nm calculate the theoretical curve of spectrum, as a result as shown in Figure 2.
A kind of calculation method of theoretical spectral curve can use following formula, but be not limited to following formula:
Wherein,When air refraction, N2 when N1 is different λ are different λ
By throwing material complex refractivity index, base material complex refractivity index when N3 is different λ, but it is not limited to above-mentioned formula.
Then, one section of wavelength region of theoretical spectral curve is chosen, as shown in figure 3, choosing the wave-length coverage of 250-700nm
Region.
Then all maximum and the corresponding wavelength value of minimum point in above-mentioned chosen area are calculated, is denoted as λ hi, λ respectively
Lk, while remembering λ h, number a, the b of λ k, as shown in figure 4, being denoted as λ h1, λ h2, λ h3 and λ l1, λ l2, λ l3 respectively, wherein a=3,
B=3.
Then polishing starts, while acquiring initial data, and a reflection relative reflectance and wavelength relationship is calculated
The curve of spectrum, as shown in figure 5, as shown in the figure by throwing material SiO2Original depth d=500nm.
The above-mentioned curve of spectrum 1 is filtered, obtains a smooth curve of spectrum, as shown in Figure 6.
The smooth curve of spectrum that same area is chosen according to theoretical spectral curve ranges, calculates institute in the smooth curve of spectrum
There are maximum and the corresponding wavelength value of minimum point, be denoted as λ hi ', λ lk ' respectively, while remembering λ h ', number a ', the b ' of λ l ', such as
The region between 250-700nm is chosen shown in Fig. 7, in figure, finds corresponding maximum and the corresponding wavelength value of minimum, respectively
It is denoted as λ h1 ', λ h2 ', λ h3 ' and λ l1 ', λ l2 ', λ l3 ', λ l4 ', wherein a '=3, b=4 '.
Next, it is determined whether meet a=a ' and b=b ', if result be it is no, continue wafer polishing process, it is corresponding
The step 3 of Fig. 1；If result be it is yes, calculate quadratic sum S=∑ (λ hi- λ hi ')2+∑(λlk-λlk’)2。
In above-mentioned calculating, because of a ≠ a ', continue to acquire initial data, does above-mentioned identical calculations processing.Until a
=a ' and b=b ' then calculate quadratic sum S=∑ (λ hi- λ hi ')2+∑(λlk-λlk’)2。
Judge whether S is less than given threshold, if it is not, then continuing wafer polishing, the step 3 in corresponding diagram 1 is (from top to bottom
Direction third frame)；If it is, equipment stops polishing process, illustrate to have reached preset removal target.
The description of the above specific embodiment is not intended to limit the invention, all within the spirits and principles of the present invention institute
Any modification, equivalent substitution, improvement and etc. of work, should all be included in the protection scope of the present invention.
Claims (8)
1. the online end-point detection method of chemically mechanical polishing based on spectrum, which is characterized in that comprise the steps of:
S1: according to by the film thickness d value meter after the refractive index n of throwing film and base material, extinction coefficient k and the polishing wafer of setting
Calculate a theoretical curve of spectrum；
S2: choosing wherein one section of wavelength region of the above-mentioned theory curve of spectrum, calculates: all relative reflectance poles in chosen area
It is big to be worth relative reflectance minimum point pair in the corresponding wavelength value λ hi of point and the corresponding wavelength number a of maximum point, chosen area
The corresponding wavelength number b of the wavelength value λ lk and minimum point answered；
S3: in polishing process, acquiring original spectral data in real time, obtain one reflection relative reflectance and wavelength relationship it is original
The curve of spectrum, and the curve of spectrum is filtered, obtain a smooth filtering spectrum curve；
S4: to the processing mode of theoretical spectral curve in reference step 2, the filtering spectrum curve area of identical wavelength region is chosen
Domain calculates: the corresponding wavelength value λ hi ' of all relative reflectance maximum points and the corresponding wavelength of maximum point in chosen area
The corresponding wavelength value λ lk ' of relative reflectance minimum point and the corresponding wavelength number of minimum point in number a ', chosen area
b'；
S5: judging whether a=a ' and b=b ', if not, return step S3；If so, calculating the difference value S between two groups of data；
S6: judging whether S is less than preset threshold value, if not, return step S3；If so, then equipment stops polishing.
2. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that d described in step 1
Range of values of thickness be 0-5000nm.
3. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that the base in step 1
Bottom material is monocrystalline silicon.
4. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that thrown in step 1
The calculation formula of film and base material relative reflectance is:Wherein, The complex refractivity index by throwing film and base material when air refraction, N2 when N1 is different λ are different λ,
Base material complex refractivity index when N3 is different λ.
5. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that described in step 1
Refractive index n and extinction coefficient k can be obtained by ellipsometer or film thickness detector measurement.
6. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that described in step 2
Wavelength region is between 200-1100nm.
7. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that described in step 3
It is flat using Fast Fourier Transform (FFT), Gauss, least square method, high pass, low pass, band logical, movement for being filtered to the curve of spectrum
The combination of one or more filtering methods of mean value.
8. the online end-point detection method of chemically mechanical polishing according to claim 1, which is characterized in that described in step 5
Two groups of data of calculating between the method for difference be quadratic sum, i.e. S=∑ (λ hi- λ hi ')2+∑(λlk-λlk’)2。
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| CN201811097884.1A CN109262445A (en) | 2018-09-20 | 2018-09-20 | A kind of online end-point detection method of chemical-mechanical planarization based on spectrum |
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| CN201910440345.1A Active CN109968186B (en) | 2018-09-20 | 2019-05-24 | Spectrum-based chemical mechanical polishing online end point detection method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023284013A1 (en) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | Method for controlling surface gloss of metal workpiece, and method for preparing metal film |
| CN115950859A (en) * | 2023-03-14 | 2023-04-11 | 北京特思迪半导体设备有限公司 | Method and system for judging limit of resolution of reflection spectrum according to film thickness detection resolution |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111709637B (en) * | 2020-06-11 | 2023-08-22 | 中国科学院西安光学精密机械研究所 | Qualitative analysis method for interference degree of spectrum curve |
| CN116713892B (en) * | 2023-08-10 | 2023-11-10 | 北京特思迪半导体设备有限公司 | Endpoint detection method and apparatus for wafer film grinding |
| CN116766042B (en) * | 2023-08-22 | 2023-10-13 | 北京特思迪半导体设备有限公司 | Thickness on-line detection method and equipment for wafer film grinding |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287159A (en) * | 2000-04-05 | 2001-10-16 | Nikon Corp | Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method |
| US20020173084A1 (en) * | 2001-03-12 | 2002-11-21 | Makoto Ohkawa | Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate |
| CN101515537A (en) * | 2008-02-22 | 2009-08-26 | 中芯国际集成电路制造(上海)有限公司 | Polishing endpoint detection method capable of improving detection precision |
| JP2009283868A (en) * | 2008-05-26 | 2009-12-03 | Tokyo Seimitsu Co Ltd | Method for detecting polishing end point |
| US20150120243A1 (en) * | 2013-10-25 | 2015-04-30 | Applied Materials, Inc. | Reducing noise in spectral data from polishing substrates |
| CN105206544A (en) * | 2014-05-28 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Terminal point detection system and operation state monitoring method thereof |
| CN107363712A (en) * | 2017-08-18 | 2017-11-21 | 清华大学 | Online end point determination control system and method for CMP process |
| CN107520740A (en) * | 2017-09-18 | 2017-12-29 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The detection method of optical spectrum end-point, apparatus and system in a kind of chemically mechanical polishing |
-
2018
- 2018-09-20 CN CN201811097884.1A patent/CN109262445A/en active Pending
-
2019
- 2019-05-24 CN CN201910440345.1A patent/CN109968186B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001287159A (en) * | 2000-04-05 | 2001-10-16 | Nikon Corp | Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method |
| US20020173084A1 (en) * | 2001-03-12 | 2002-11-21 | Makoto Ohkawa | Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate |
| CN101515537A (en) * | 2008-02-22 | 2009-08-26 | 中芯国际集成电路制造(上海)有限公司 | Polishing endpoint detection method capable of improving detection precision |
| JP2009283868A (en) * | 2008-05-26 | 2009-12-03 | Tokyo Seimitsu Co Ltd | Method for detecting polishing end point |
| US20150120243A1 (en) * | 2013-10-25 | 2015-04-30 | Applied Materials, Inc. | Reducing noise in spectral data from polishing substrates |
| CN105206544A (en) * | 2014-05-28 | 2015-12-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Terminal point detection system and operation state monitoring method thereof |
| CN107363712A (en) * | 2017-08-18 | 2017-11-21 | 清华大学 | Online end point determination control system and method for CMP process |
| CN107520740A (en) * | 2017-09-18 | 2017-12-29 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The detection method of optical spectrum end-point, apparatus and system in a kind of chemically mechanical polishing |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023284013A1 (en) * | 2021-07-13 | 2023-01-19 | 长鑫存储技术有限公司 | Method for controlling surface gloss of metal workpiece, and method for preparing metal film |
| CN115950859A (en) * | 2023-03-14 | 2023-04-11 | 北京特思迪半导体设备有限公司 | Method and system for judging limit of resolution of reflection spectrum according to film thickness detection resolution |
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| CN109968186B (en) | 2020-06-16 |
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