CN102729140B - Chemical-mechanical grinding system and method for grinding wafers with the same - Google Patents
Chemical-mechanical grinding system and method for grinding wafers with the same Download PDFInfo
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- CN102729140B CN102729140B CN201110081814.9A CN201110081814A CN102729140B CN 102729140 B CN102729140 B CN 102729140B CN 201110081814 A CN201110081814 A CN 201110081814A CN 102729140 B CN102729140 B CN 102729140B
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Abstract
The invention discloses a chemical-mechanical grinding system and grinding method for wafers. A layer of materials to be grinded is formed on the said wafers. The said method performs chemical-mechanical grinding on the said wafers by using an abrasion pad, wherein the said wafers sway along a radial direction of the abrasion pad by certain amplitude determined by a following method. The amplitude is determined by a first relation curve and the quantity of the wafers grinded by the abrasion pad; the said first relation curve is a curve showing a relation between amount of the wafers grinded by the abrasion pad and the said amplitude when the thickness difference between an upper edge area and a center area on grinded wafers reaches a target value. The Chemical-mechanical grinding method compensates the thickness difference between the center area and the upper edge area after grinding by adjusting the amplitude of the wafers' swaying along the radial direction of the abrasion pad in a grinding process, such that the appearance change of the wafers due to the long using time of the abrasion pad can be prevented.
Description
Technical field
The present invention relates to process for fabrication of semiconductor device, particularly a kind of chemical machinery polishing system and use the method for this system grinding wafers.
Background technology
Along with dwindling of the development of semiconductor technology, device size, photoetching technique requires more and more higher to the smooth degree of wafer surface.Wherein, cmp (CMP) is a kind of flattening method being commonly used in semiconductor fabrication, and in addition, cmp can also be used for removing the film that is deposited on wafer surface.The principle of cmp comprises the combination of chemistry and mechanical effect, in material surface to be ground, generates certain layer because of there is chemical reaction, then mechanically this certain layer is removed.
Fig. 1 is the top view of existing chemical mechanical polishing device.As shown in Figure 1, chemical mechanical polishing device 100 comprises grinding pad 110, grinding head 130, polishing liquid transmitting device 140 and grinder pad finisher 150.The lower end of grinding head 130 is placed with wafer 120, and grinding head 130 contacts with grinding pad 110 for the surface to be ground that makes wafer 120.Polishing liquid transmitting device 140 is arranged on the top of grinding pad 110, for lapping liquid being sprayed onto to the surface of grinding pad 110.Grinder pad finisher 150 comprises the arranging plate 152 that arranges arm 151 and be arranged on arrangement wall 151 one end, wherein arranges arm 151 and can drive arranging plate 152 to move on grinding pad 110, so that arranging plate 152 is repaired action to the surface of grinding pad 110.In addition, be also provided with groove 111 on the surface of grinding pad 110, groove 111 not only can make lapping liquid be uniformly distributed on grinding pad 110, and in process of lapping, can also collect the particulate of lapping liquid generation or drop on the particulate on grinding pad 110 by the external world.
Under normal circumstances, the diameter of grinding pad 110 is than large several times of the diameter of wafer 120.In process of lapping, wafer 120 is placed on to the position of departing from grinding pad 110 centers, to prevent with irregular surface grinding wafer 120.In the process that grinding pad 110 rotates, wafer 120 also can be driven and be rotated by grinding head 130.Although the turning cylinder of the turning cylinder of wafer 120 and grinding pad 110 is not on same straight line, parallel to each other.Due to the velocity of rotation difference of zones of different on wafer 120, therefore cause the surface of grinding rear wafer 120 can have the difference on thickness.Under normal circumstances, after grinding, the thickness of wafer 120 fringe regions is greater than the thickness of wafer 120 central areas, and thickness difference between fringe region and central area is also relevant with the service time of grinding pad 110.The service time of grinding pad 110 is longer, and above-mentioned thickness difference is larger.In the time that reach its maximum life the service time of grinding pad 110, after grinding, above-mentioned thickness difference can reach 1400 dusts, even more.
In cmp operation, grinding pad 110 and arranging plate 152 all belong to two kinds of main consumptive materials, and they will affect the grinding rate of material layer and grind the rear central area of wafer and the thickness difference of fringe region (, surface topography).At both use initial stages with while approaching maximum service life (MSL), although only there is very little difference in technique, the character of wafer is produced a very large impact.Taking the cmp in the Damascus technics process of Cu as example, along with the prolongation of service time of grinding pad 110 and arranging plate 152, after grinding, the thickness of wafer 120 upper edge region can obviously be greater than the thickness of central area, therefore, causes fringe region to have metal Cu residual.
In addition,, along with the carrying out of cmp operation, it is more and more smooth that the surface of grinding pad 110 can become.Grinder pad finisher 150, except can cleaning the grinding chip on grinding pad 110 surfaces, can also improve by forming small scratch on grinding pad 110 surfaces the roughness of grinding pad 110, and then suppresses the smoothing of grinding pad 110.But along with the arranging plate prolongation of 152 service times, the deleterious that it improves grinding pad 110 surface roughnesses, causes the grinding rate of material layer to be ground to reduce.
And existing chemical mechanical polishing device 100 is normally carried out cmp operation according to the technological parameter that enrolls controller (not shown).That is to say, existing cmp operation is in the different operational phases of grinding pad 110 and arranging plate 152, all adopt identical technological parameter, therefore, cannot adjust the impact bringing to cmp operation due to the prolongation of service time of grinding pad 110 and arranging plate 152.Still taking the cmp in the Damascus technics process of Cu as example, all adopt identical milling time for different wafers, and due to the change of grinding rate, on different chips, the thickness of remaining Cu can there are differences, this will cause the sheet resistance (R of Cu between different chips
s) difference.
Therefore, need a kind of chemical machinery polishing system and use the method for this system grinding wafers, to solve the problem of prior art.
Summary of the invention
In summary of the invention part, introduced the concept of a series of reduced forms, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
Prolongation for fear of grinding pad service time brings impact to cmp, the invention provides one wafer is carried out to chemical and mechanical grinding method, on described wafer, be formed with material layer to be ground, described method is used grinding pad to carry out cmp to described wafer, wherein, in carrying out described cmp, described wafer is upwards swung: the number of wafers that described wobble amplitude was ground according to the first relation curve and described grinding pad is determined with the wobble amplitude of being determined by following mode in the footpath of described grinding pad, described the first relation curve is that the thickness difference of test sample upper edge region and central area after grinding is while reaching desired value, relation curve between the wobble amplitude of test sample and the test sample size that described grinding pad ground.
Preferably, described the first relation curve is measured by the following method, and described assay method comprises: n group test sample i) is provided, and the surface of described test sample is formed with test material layer, described test material layer is identical with described material layer to be ground, and wherein n is positive integer; Ii) described x group test sample is placed on and ground t
xdescribed in sheet, test when carrying out cmp respectively on the grinding pad of sample, respectively with different wobble amplitude f
xalong each in x group test sample that radially wobbles of described grinding pad, wherein, x is integer, and 0≤x≤n; Iii) repeating step is ii) organized described test sample to n and is all completed cmp; Iv) measure n and organize the central area of each and the thickness difference of fringe region in described test sample; V) organize in described test sample and select described thickness difference to reach the test sample of described desired value at n; Vi) draw the wobble amplitude f of the test sample of v) being selected by step
xthe test sample size t grinding with described grinding pad
xbetween relation curve as the first relation curve.
The least unit of reference axis corresponding to number of wafers that preferably, described in described the first relation curve, grinding pad ground is at least 2 wafers.
Preferably, described method also comprises that use arranging plate arranges described grinding pad.
Preferably, when using described arranging plate to arrange described grinding pad, described arranging plate is exerted pressure, described pressure is determined according to following mode: determine the grinding rate of described material layer to be ground according to the service time of the second relation curve and described arranging plate, the grinding rate of test material layer that described the second relation curve is test sample surface and the relation curve between the service time of described arranging plate; According to the difference between described grinding rate and predetermined grinding rate, determine compensation grinding rate; Determine to described arranging plate applied pressure the grinding rate of the test material layer that described the 3rd relation curve is test sample surface and to the relation curve between described arranging plate applied pressure according to the 3rd relation curve and described compensation grinding rate.
Preferably, described the second relation curve is measured by the following method, and described assay method comprises: multiple test samples are provided, and the surface of described multiple test samples is all formed with test material layer, and described test material layer is identical with described material layer to be ground; When using identical grinding pad to carry out cmp to described multiple test samples, use has the arranging plate of different service times and respectively described grinding pad is arranged; Measure respectively the grinding rate of described multiple test samples; Draw described grinding rate and the relation curve between the service time of described arranging plate as the second relation curve.
Preferably, described the 3rd relation curve is measured by the following method, and described assay method comprises: multiple test samples are provided, and the surface of described multiple test samples is all formed with test material layer, and described test material layer is identical with described material layer to be ground; Use identical grinding pad to carry out cmp to described multiple test samples, and when using identical arranging plate to arrange described grinding pad, described multiple test samples are carried out to cmp, wherein, described arranging plate carries out respectively described arranging plate being applied to different pressure in arrangement process to described grinding pad; Measure respectively the grinding rate of described multiple test samples; Draw described grinding rate and to the relation curve between described arranging plate applied pressure as the 3rd relation curve.
The present invention also provides a kind of chemical machinery polishing system, comprising: chemical mechanical polishing device, and described chemical mechanical polishing device comprises grinding pad, so that wafer is carried out to cmp; Wafer counter, described wafer counter is used for the quantity of the described wafer that described grinding pad has been ground to be counted, and exports count signal; Controller, described controller receives described count signal, and determine the wobble amplitude of described wafer according to the first relation curve, and then control described chemical-mechanical grinding device and carry out cmp, wherein, described the first relation curve is the thickness difference of test sample upper edge region and central area after grinding while reaching desired value, tests the relation curve between the test sample size that sample ground along wobble amplitude and the described grinding pad of grinding pad.
The least unit of reference axis corresponding to number of wafers that preferably, described in described the first relation curve, grinding pad ground is at least 2 wafers.
Preferably, described chemical mechanical polishing device comprises arranging plate, so that described grinding pad is arranged.
Preferably, described controller is also for determining the service time of described arranging plate, and determine described arranging plate applied pressure according to the second relation curve and the 3rd relation curve, wherein, the grinding rate of test material layer that described the second relation curve is test sample surface and the relation curve between the service time of described arranging plate; The grinding rate of the test material layer that described the 3rd relation curve is test sample surface and to the relation curve between described arranging plate applied pressure.
According to chemical and mechanical grinding method of the present invention by adjusting in process of lapping wafer along grinding pad wobble amplitude radially, can compensate the thickness difference that grinds rear center region and fringe region, and then avoid with the grinding pad prolongation wafer grinding rear surface pattern change of service time.Further, by adjusting arranging plate, grinding pad is carried out in arrangement process, to arranging plate applied pressure, can compensating the reduction of grinding rate, and then maintaining the constant of grinding rate.
Brief description of the drawings
Following accompanying drawing of the present invention is used for understanding the present invention in this as a part of the present invention.Shown in the drawings of embodiments of the present invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the top view of existing chemical mechanical polishing device;
Fig. 2 A is according to the relation curve between the thickness difference of wafer upper edge region and central area after the grinding of one aspect of the invention and number of wafers that grinding pad ground;
Fig. 2 B is while reaching 400 dust according to the thickness difference of wafer upper edge region and central area after the grinding of one aspect of the invention, the relation curve between the number of wafers that wobble amplitude and grinding pad ground;
Fig. 3 A is according to the grinding rate of the material layer to be ground of one aspect of the invention and the relation curve between the service time of arranging plate;
Fig. 3 B is according to the grinding rate of the material layer to be ground of one aspect of the invention and to the relation curve between arranging plate applied pressure;
Fig. 4 is according to the schematic diagram of the chemical machinery polishing system of one embodiment of the present invention.
Detailed description of the invention
In the following description, a large amount of concrete details have been provided to more thorough understanding of the invention is provided.But, it will be apparent to one skilled in the art that the present invention can be implemented without one or more these details.In other example, for fear of obscuring with the present invention, be not described for technical characterictics more well known in the art.
In order thoroughly to understand the present invention, will detailed step be proposed in following description, so that how explanation the present invention avoids the impact that brings to cmp operation with the prolongation of service time of grinding pad.Obviously, execution of the present invention is not limited to the specific details that the technical staff of semiconductor applications has the knack of.Preferred embodiments of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Wafer is carried out in chemical mechanical planarization process, grinding pad and arranging plate are two kinds of main consumptive materials.According to the difference between the material of the different and material layer to be ground of grinding pad and arranging plate kind, the maximum service life (MSL) of grinding pad and arranging plate is not identical yet.While grinding this wafer, grinding pad and the arranging plate different phase in its service life can produce certain influence to grinding the surface topography of rear wafer and the grinding rate of material layer to be ground, finally cause the greatest differences between performance of semiconductor device, even can affect yields.Below by the impact on cmp and solution of the present invention on the service time of grinding pad respectively, and the service time of arranging plate, impact and the solution of the present invention on cmp was described in detail
Fig. 2 A is according to the relation curve between the thickness difference of wafer upper edge region and central area after the grinding of one aspect of the invention and number of wafers that grinding pad ground.It should be noted that, the number of wafers of grinding with grinding pad in the present invention reflects the service time of this grinding pad.As shown in Figure 2 A, the increase of the number of wafers of grinding along with grinding pad (, the increase of grinding pad service time), after grinding, the thickness difference of wafer upper edge region and central area obviously increases.The thickness that this thickness difference is usually expressed as the fringe region of material layer to be ground on wafer is greater than the thickness of central area.Can grind at most 800 wafer as example taking grinding pad, initial stage and latter stage within grinding pad maximum service life (MSL), above-mentioned thickness difference increases to 1300 dusts from 300 dusts.
The invention provides a kind of method of wafer being carried out to cmp.The method is used grinding pad to carry out cmp to the wafer that is formed with material layer to be ground.As shown in Figure 1, in carrying out above-mentioned cmp, wafer 120 is upwards swung in the footpath of grinding pad 110, the number of wafers that wherein amplitude fluctuation of wafer 120 can be ground according to the first relation curve and grinding pad 110 is determined, wherein, described the first relation curve is when after grinding, the thickness difference of wafer 120 upper edge region and central area reaches desired value, the relation curve between the number of wafers that wobble amplitude and grinding pad 110 ground.The method according to this invention is in the process of grinding wafers, by making wafer can compensate the thickness difference that grinds rear center region and fringe region along radially wobbling of grinding pad.Further, can compensate the increase of the thickness difference that the prolongation of grinding pad service time brings by changing the above-mentioned wobble amplitude radially wobbling.
In practical operation, the assay method of the first relation curve can comprise the following steps:
Step I): n (n is positive integer) group test sample is provided, and the surface of each test sample is formed with test material layer.Consistent with wafer to be ground in order to make to test sample, the test material layer on these test samples is identical with the material layer to be ground on wafer.
Step I is i): x group test sample is placed on and ground t
xwhen carrying out cmp respectively on the grinding pad of built-in testing sample, respectively with different wobble amplitude f
xalong each in x group test sample that radially wobbles of grinding pad, wherein, x is integer, and 0≤x≤n.Carry out in process of lapping at the x group test sample in n group test sample, keep other parameter constant, only change the wobble amplitude of wafer, and record the wobble amplitude f of each wafer in x group
x.In other parameter, a topmost parameter is the quantity t of the test sample that ground of grinding pad
x, the time that grinding pad has used.
Step I is ii): repeating step ii) all completes cmp to n group test sample.It will be understood by those of skill in the art that in order to obtain data point as much as possible the t of the grinding pad that each group test sample uses
xshould be different.
Step I is v): measure the central area of each and the thickness difference of fringe region in n group test sample.
Step is v): in n group test sample, select thickness difference to reach the test sample of desired value.This desired value depends on the live width of the semiconductor devices of the material of ground material layer and structure, manufacturing, demand of the different producers etc.For instance, this desired value can be 300 dusts, 350 dusts, 400 dusts, 450 dusts or 500 dusts etc.
Step is vi): the wobble amplitude f that draws the test sample of v) being selected by step
xthe test sample size t grinding with grinding pad
xbetween relation curve as the first relation curve.
It should be noted that, the first relation curve can adopt several different methods to measure, and only provides a kind of assay method that principle of the present invention is described here, and therefore, the first relation curve of mentioning is here not limited to the curve that adopts said method to measure.In addition, it should be noted in the discussion above that according to grinding the different of desired value that rear wafer upper edge region will reach from the thickness difference of central area, need to measure many first relation curves, to meet the demand to different target value.
The assay method of the first relation curve will be described according to one embodiment of the present invention in detail below.
First, provide multiple identical test samples, and these test samples are divided into 6 groups.Each test sample comprises substrate and be formed on the test material layer on substrate, and described test material layer is identical with the material layer to be ground on wafer.According to one aspect of the invention, described test material layer is oxide skin(coating) and is formed on the copper interconnection structure in this oxide skin(coating).
Then, these 6 groups test samples are placed on respectively on the grinding pad of the test sample that ground varying number and carry out cmp.For example, the 1st group is placed on the grinding pad that ground 50 built-in testing samples and grinds; The 2nd group is placed on the grinding pad that ground 150 built-in testing samples and grinds; The 3rd group is placed on the grinding pad that ground 300 built-in testing samples and grinds; The 4th group is placed on the grinding pad that ground 450 built-in testing samples and grinds; The 5th group is placed on the grinding pad that ground 600 built-in testing samples and grinds; The 6th group is placed on the grinding pad that ground 800 built-in testing samples and grinds.
When multiple test samples that each group is comprised carry out cmp, the multiple test samples that this group is comprised that radially wobble along grinding pad with different wobble amplitude respectively.For example, can the radially wobbling along grinding pad with following wobble amplitude respectively for the 1st group of multiple test samples that comprise: 1.0 inches, 1.1 inches, 1.2 inches, 1.3 inches, 1.4 inches, 1.5 inches, 1.6 inches, 1.7 inches, 1.8 inches, 1.9 inches, 2.0 inches, 2.1 inches, 2.2 inches, 2.3 inches, 2.4 inches, 2.5 inches, 2.6 inches, 2.7 inches, 2.8 inches, 2.9 inches and 3.0 inches etc.; Similarly, can adopt with the 1st group of identical or different wobble amplitude and swing for multiple test samples that in 2-5 group, each group comprises.Be understandable that, the numerical value of above-mentioned wobble amplitude can be greater or lesser, also can above-mentioned wobble amplitude be set with larger interval or less interval.
Should be noted that, in process of lapping in order to prevent with irregular surface grinding wafer, conventionally wafer is placed on to the position of departing from grinding pad center, therefore, above-mentioned wobble amplitude is the ultimate range between center wafer and grinding pad center and the difference between minimum range in process of lapping.According to one embodiment of the invention, the minimum range of setting between center wafer and grinding pad center is 5.5 inches.In such cases, if wafer is with the wobble amplitude of 2.5 inches during along the radially wobbling of grinding pad, ultimate range in process of lapping between center wafer and grinding pad center is 8.0 inches, be in process of lapping, wafer therein the heart apart from swinging between 2 of 5.5 inches to 8.0 inches, grinding pad center.
Then,, after 6 groups of test samples grind and finish, measure the thickness difference of central area and fringe region on each sample.
Then, in 6 groups of test samples, select thickness difference to reach the test sample of desired value.According to one embodiment of the present invention, setting this desired value is 400 dusts.
Finally, draw the wobble amplitude of selecteed test sample and test sample size t that grinding pad ground
xbetween relation curve as the first relation curve (as shown in Figure 2 B).
Can make the wafer after grinding there is same or analogous thickness difference by adopting said method to carry out cmp to wafer, ensure the uniformity of wafer topography after grinding, and then improve uniformity and the yields of semiconductor devices.
When successively wafer being carried out in chemical mechanical planarization process, the increase of number of wafers of grinding along with grinding pad, polished adjacent two wafers or several wafers successively, the central area after its grinding and the thickness difference difference of fringe region are less, negligible.The least unit of reference axis corresponding to number of wafers that preferably, in above-mentioned the first relation curve, grinding pad ground is at least 2 wafers.According to the first relation curve with grind grinding pad ground when this wafer number of wafers while determining the amplitude fluctuation of this wafer, as long as above which puts in corresponding scope reference axis (routine transverse axis as shown in Figure 2 B) corresponding to definite described number of wafers number of wafers that grinding pad ground in the first relation curve.Adopt the method can avoid changing continually the technological parameter in chemical mechanical planarization process, extend the service life of chemical-mechanical grinding device, simplify technique simultaneously, shorten the process time.
In addition, the method that wafer is carried out to cmp according to the present invention also comprises and uses arranging plate to arrange grinding pad.Use arranging plate grinding pad to be arranged to the grinding chip that not only can clean grinding pad surface, extend the service life of grinding pad, can also avoid by suppressing the smoothing of grinding pad the change of grinding rate.
Be also one of main consumptive material in chemical mechanical planarization process due to arranging plate, wafer to be ground can produce considerable influence to grinding rate in the different times in arranging plate service life.Fig. 3 A is according to the grinding rate of the material layer to be ground of one aspect of the invention and the relation curve between the service time of arranging plate.Along with the arranging plate growth of service time, the grinding rate of material layer to be ground obviously declines.In the time that be 0 hour and 30 hours the service time of arranging plate, grinding rate differs more than 250 A/min of clocks.It should be noted that the curve shown in Fig. 3 A be the oxide skin(coating) that comprises copper interconnection structure be example as material layer to be ground, therefore, this curve is the relation for illustrating that qualitatively grinding rate changed with service time of arranging plate only.
According to one embodiment of the present invention, when using arranging plate to arrange grinding pad, arranging plate is exerted pressure, wherein, institute's applied pressure can be determined according to following mode:
First, determine the grinding rate of material layer to be ground according to the service time of the second relation curve and arranging plate.Wherein, the grinding rate that the second relation curve is material layer to be ground and the relation curve between the service time of arranging plate, hereinafter will be described in detail the assay method of described the second relation curve.
Then,, according to the difference between grinding rate and predetermined grinding rate, determine compensation grinding rate.Predetermined grinding rate can be considered according to the material of material layer to be ground, the producer's the combined factors such as needs, milling time.
Finally, determine arranging plate applied pressure according to the 3rd relation curve and compensation grinding rate.Wherein, the grinding rate that the 3rd relation curve is material layer to be ground and to the relation curve between arranging plate applied pressure, hereinafter will be described in detail the assay method of described the 3rd relation curve.
Below in conjunction with Fig. 3 A and 3B, the assay method of the first relation curve and the second relation curve is described in detail.The assay method of the first relation curve provided here and the second relation curve is only the one in many measure method, is intended to illustrate principle of the present invention, therefore, below assay method be not construed as limiting the invention.
Preferably, the second relation curve can obtain by following assay method:
First, provide multiple test samples, the surface of these test samples is all formed with test material layer, and this test material layer is identical with the material layer to be ground on wafer.According to one aspect of the invention, described test material layer is oxide skin(coating) and is formed on the copper interconnection structure in this oxide skin(coating).
Then,, when using identical grinding pad to carry out cmp to multiple test samples, the arranging plate different with service time arranges grinding pad respectively.Can be the service time of described arranging plate such as 0 hour, 5 hours, 10 hours, 15 hours, 20 hours, 25 hours and 30 hours etc.Those skilled in the art should be understood that, in this process, other parameter should remain constant as far as possible.According to one embodiment of the present invention, in the time grinding respectively above-mentioned multiple test sample, arranging plate applied pressure is maintained to 2N/m
2(newton/square metre), each test sample is 5.5-7.0 inch along the wobble amplitude radially of grinding pad while grinding.
Then, measure respectively the grinding rate of multiple test samples.
Finally, draw grinding rate and the relation curve between the service time of arranging plate as the second relation curve (as shown in Figure 3A).
Preferably, the second relation curve can obtain by following assay method:
First, provide multiple test samples, the surface of these test samples is all formed with test material layer, and this test material layer is identical with the material layer to be ground on wafer.According to one aspect of the invention, described test material layer is oxide skin(coating) and is formed on the copper interconnection structure in this oxide skin(coating).
Then, use identical grinding pad to carry out cmp to multiple test samples, and when using identical arranging plate respectively grinding pad to be arranged, multiple test samples are carried out to cmp.Wherein, use arranging plate to carry out, in arrangement process, respectively arranging plate being applied to different pressure to grinding pad.For instance, can be 0N/m to arranging plate applied pressure
2, 1N/m
2, 2N/m
2, 3N/m
2, 4N/m
2, 5N/m
2and 6N/m
2deng.
Then, measure respectively the grinding rate of multiple test samples.
Finally, draw grinding rate and to the relation curve between arranging plate applied pressure as the 3rd relation curve.Fig. 3 B is according to the grinding rate of the material layer to be ground of one aspect of the invention and to the relation curve between arranging plate applied pressure.As shown in Figure 3 B, along with the increase to arranging plate applied pressure, grinding rate increases gradually.
As can be seen here, according to an embodiment of the invention, along with the arranging plate prolongation of service time, grinding rate can reduce, and can compensate the reduction of grinding rate, and then maintain the constant of grinding rate by increasing to arranging plate applied pressure.It should be noted in the discussion above that the curved line relation shown in Fig. 3 A and 3B is only to carry out cmp as example to the oxide skin(coating) that comprises copper interconnection structure as material layer to be ground.In the time that the material layer to be ground of other material is ground, or while using the lapping liquid of other kind, grinding rate with the variation tendency of the service time of arranging plate and grinding rate with changing to the variation tendency of arranging plate applied pressure, use the method according to this invention adjustment to arranging plate applied pressure, to maintain the constant of grinding rate but do not affect.
In addition, the present invention also provides a kind of chemical machinery polishing system.As shown in Figure 4, chemical machinery polishing system comprises chemical mechanical polishing device, wafer counter and controller.The equipment that chemical mechanical polishing device can adopt this area to adopt, for example, comprise grinding pad, so that wafer is carried out to cmp.Wafer counter is used for the quantity of the wafer that grinding pad has been ground to be counted, and exports count signal.Controller is used for receiving described count signal, and determines the wobble amplitude of wafer according to the first relation curve, and then controls chemical-mechanical grinding device and carry out cmp.Wherein, the first relation curve is when after grinding, the thickness difference of wafer upper edge region and central area reaches desired value, the relation curve between the number of wafers that wafer ground along wobble amplitude and the grinding pad of grinding pad.The first relation curve can adopt said method to measure, and no longer describes in detail here.
Preferably, the least unit of reference axis corresponding to number of wafers that in the first relation curve, grinding pad ground is at least 2 wafers, to avoid changing the continually technological parameter in chemical mechanical planarization process, extend the service life of chemical-mechanical grinding device, simplify technique simultaneously, shorten the process time.
Preferably, also comprise arranging plate according to chemical mechanical polishing device of the present invention, so that grinding pad is arranged.Use arranging plate grinding pad to be arranged to the grinding chip that not only can clean grinding pad surface, extend the service life of grinding pad, can also avoid by suppressing the smoothing of grinding pad the change of grinding rate.
Preferably, controller is also for determining service time of arranging plate, and determines arranging plate applied pressure according to the second relation curve and the 3rd relation curve.Wherein, the grinding rate that the second relation curve is material layer to be ground and the relation curve between the service time of arranging plate; The grinding rate that the 3rd relation curve is material layer to be ground and to the relation curve between arranging plate applied pressure.The second relation curve and the 3rd relation curve can adopt said determination method to measure, and therefore no longer describe in detail.Controller can adopt method above-mentioned, determines arranging plate applied pressure according to the service time of arranging plate, the second relation curve and the 3rd relation curve.Briefly, described method comprises: the grinding rate of determining material layer to be ground according to the service time of the second relation curve and arranging plate; According to the difference between grinding rate and predetermined grinding rate, determine compensation grinding rate; Determine arranging plate applied pressure according to the 3rd relation curve and compensation grinding rate.
According to chemical and mechanical grinding method of the present invention by adjusting in process of lapping wafer along grinding pad wobble amplitude radially, can compensate the thickness difference that grinds rear center region and fringe region, and then avoid with the grinding pad prolongation wafer grinding rear surface pattern change of service time.Further, by adjusting arranging plate, grinding pad is carried out in arrangement process, to arranging plate applied pressure, can compensating the reduction of grinding rate, and then maintaining the constant of grinding rate.
Have according to the semiconductor device structure of embodiment manufacture as mentioned above and can be applicable in multiple integrated circuit (IC).For example memory circuitry according to IC of the present invention, as random-access memory (ram), dynamic ram (DRAM), synchronous dram (SDRAM), static RAM (SRAM) (SRAM) or read-only storage (ROM) etc.Can also be logical device according to IC of the present invention, as programmable logic array (PLA), special IC (ASIC), combination type DRAM logical integrated circuit (buried type DRAM), radio circuit or other circuit devcies arbitrarily.IC chip according to the present invention can be used for for example consumer electronic products, in the various electronic products such as personal computer, portable computer, game machine, cellular phone, personal digital assistant, video camera, digital camera, mobile phone, especially in radio frequency products.
The present invention is illustrated by above-mentioned embodiment, but should be understood that, above-mentioned embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited within the scope of described embodiment.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-mentioned embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (11)
1. one kind is carried out the method for cmp to wafer, on described wafer, be formed with material layer to be ground, described method is used grinding pad to carry out cmp to described wafer, wherein, in carrying out described cmp, described wafer is upwards swung: the number of wafers that described wobble amplitude was ground according to the first relation curve and described grinding pad is determined with the wobble amplitude of being determined by following mode in the footpath of described grinding pad, described the first relation curve is that the thickness difference of test sample upper edge region and central area after grinding is while reaching desired value, relation curve between the wobble amplitude of test sample and the test sample size that described grinding pad ground.
2. the method for claim 1, is characterized in that, described the first relation curve is measured by the following method, and described assay method comprises:
I) provide n group test sample, the surface of described test sample is formed with test material layer, and described test material layer is identical with described material layer to be ground, and wherein n is positive integer;
Ii) described x group test sample is placed on and ground t
xdescribed in sheet, test when carrying out cmp respectively on the grinding pad of sample, respectively with different wobble amplitude f
xalong each in x group test sample that radially wobbles of described grinding pad, wherein, x is integer, and 0≤x≤n;
Iii) repeating step is ii) organized described test sample to n and is all completed cmp;
Iv) measure n and organize the central area of each and the thickness difference of fringe region in described test sample;
V) organize in described test sample and select described thickness difference to reach the test sample of described desired value at n;
Vi) draw the wobble amplitude f of the test sample of v) being selected by step
xthe test sample size t grinding with described grinding pad
xbetween relation curve as the first relation curve.
3. the method for claim 1, is characterized in that, the least unit of reference axis corresponding to number of wafers that described in described the first relation curve, grinding pad ground is at least 2 wafers.
4. the method for claim 1, is characterized in that, described method also comprises that use arranging plate arranges described grinding pad.
5. method as claimed in claim 4, is characterized in that, when using described arranging plate to arrange described grinding pad, described arranging plate is exerted pressure, and described pressure is determined according to following mode:
Determine the grinding rate of described material layer to be ground according to the service time of the second relation curve and described arranging plate, the grinding rate of test material layer that described the second relation curve is test sample surface and the relation curve between the service time of described arranging plate;
According to the difference between described grinding rate and predetermined grinding rate, determine compensation grinding rate;
Determine to described arranging plate applied pressure the grinding rate of the test material layer that described the 3rd relation curve is test sample surface and to the relation curve between described arranging plate applied pressure according to the 3rd relation curve and described compensation grinding rate.
6. method as claimed in claim 5, is characterized in that, described the second relation curve is measured by the following method, and described assay method comprises:
Multiple test samples are provided, and the surface of described multiple test samples is all formed with test material layer, and described test material layer is identical with described material layer to be ground;
When using identical grinding pad to carry out cmp to described multiple test samples, use has the arranging plate of different service times and respectively described grinding pad is arranged;
Measure respectively the grinding rate of described multiple test samples;
Draw described grinding rate and the relation curve between the service time of described arranging plate as the second relation curve.
7. method as claimed in claim 5, is characterized in that, described the 3rd relation curve is measured by the following method, and described assay method comprises:
Multiple test samples are provided, and the surface of described multiple test samples is all formed with test material layer, and described test material layer is identical with described material layer to be ground;
Use identical grinding pad to carry out cmp to described multiple test samples, and when using identical arranging plate to arrange described grinding pad, described multiple test samples are carried out to cmp, wherein, described arranging plate carries out respectively described arranging plate being applied to different pressure in arrangement process to described grinding pad;
Measure respectively the grinding rate of described multiple test samples;
Draw described grinding rate and to the relation curve between described arranging plate applied pressure as the 3rd relation curve.
8. a chemical machinery polishing system, comprising:
Chemical mechanical polishing device, described chemical mechanical polishing device comprises grinding pad, so that wafer is carried out to cmp;
Wafer counter, described wafer counter is used for the quantity of the described wafer that described grinding pad has been ground to be counted, and exports count signal;
Controller, described controller receives described count signal, and determines the wobble amplitude of described wafer according to the first relation curve, and then controls described chemical-mechanical grinding device and carry out cmp,
Wherein, described the first relation curve is the thickness difference of test sample upper edge region and central area after grinding while reaching desired value, tests the relation curve between the test sample size that sample ground along wobble amplitude and the described grinding pad of grinding pad.
9. chemical machinery polishing system as claimed in claim 8, is characterized in that, the least unit of reference axis corresponding to number of wafers that described in described the first relation curve, grinding pad ground is at least 2 wafers.
10. chemical machinery polishing system as claimed in claim 8, is characterized in that, described chemical mechanical polishing device comprises arranging plate, so that described grinding pad is arranged.
11. chemical machinery polishing systems as claimed in claim 10, it is characterized in that, described controller is also for determining the service time of described arranging plate, and determine described arranging plate applied pressure according to the second relation curve and the 3rd relation curve, wherein, the grinding rate of test material layer that described the second relation curve is test sample surface and the relation curve between the service time of described arranging plate; The grinding rate of the test material layer that described the 3rd relation curve is test sample surface and to the relation curve between described arranging plate applied pressure.
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| CN101209539A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding time control |
| CN101456151A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing and end-point detection method thereof |
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| CN101209539A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding time control |
| CN101456151A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing and end-point detection method thereof |
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