CN109659397A - A kind of IBC battery and preparation method thereof - Google Patents
A kind of IBC battery and preparation method thereof Download PDFInfo
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- CN109659397A CN109659397A CN201811593583.8A CN201811593583A CN109659397A CN 109659397 A CN109659397 A CN 109659397A CN 201811593583 A CN201811593583 A CN 201811593583A CN 109659397 A CN109659397 A CN 109659397A
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- 238000002360 preparation method Methods 0.000 title description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 69
- 229920005591 polysilicon Polymers 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 25
- 238000005286 illumination Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims description 7
- 238000005422 blasting Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052796 boron Inorganic materials 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of IBC battery production methods, including the first surface regional area in silicon wafer, form n+ layers using high temperature propulsion mode, wherein the surface opposite for receiving illumination of the first surface and the silicon wafer；The first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；Film process is carried out out to the film layer for being located at the first surface, to form gap；Electrode is formed in the gap.By deposit polycrystalline silicon layer in the application IBC battery production method, replace the printing of boron slurry, polysilicon layer acts not only as p+ layers, is also used as emission layer, increases the transmission of photo-generated carrier, to increase IBC battery performance.In addition, the application also provides a kind of IBC battery having the above advantages.
Description
Technical field
This application involves solar cell manufacture technology fields, more particularly to a kind of IBC battery and preparation method thereof.
Background technique
Solar cell is a kind of device that can be converted solar energy into electrical energy, and has very big application prospect, therefore,
Photovoltaic industry is quickly grown in recent years.With the development of photovoltaic industry, the photoelectric conversion efficiency of solar cell photovoltaic always is improved
The target that enterprise is constantly pursued.
IBC (Interdigitated Back Contact intersects back contacts or all back-contact electrodes contact) battery, is a kind of
Front is without gate-shaped electrode, solar cell of the positive and negative electrode cross arrangement in cell backside.Since IBC battery front side does not have electrode screening
All the cell backside the characteristics of, photoelectric conversion efficiency is improved compared with conventional crystalline silicon solar cell for gear, n+ structure and p+ structure,
It is increasingly becoming research hotspot.
Existing IBC battery production method is not as shown in Figure 1, PSG, BSG after laser ablation are removed, to subsequent printing
There is certain influence in metal electrode, and then influence the performance of IBC battery.
Summary of the invention
The purpose of the application is to provide a kind of IBC battery and preparation method thereof, to promote the performance of IBC battery.
In order to solve the above technical problems, the application provides a kind of IBC battery production method, comprising:
In the first surface regional area of silicon wafer, form n+ layer using high temperature propulsion mode, wherein the first surface and
The surface opposite for receiving illumination of the silicon wafer；
The first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；
Film process is carried out out to the film layer for being located at the first surface, to form gap；
Electrode is formed in the gap.
Optionally, the condition that the high temperature promotes are as follows:
Under nitrogen atmosphere, temperature range is at 700 DEG C -850 DEG C, and time range is in 20min-60min, including all endpoints
Value.
Optionally, before the first surface regional area in silicon wafer forms n+ layers further include:
Oxide layer is formed on the surface of the silicon wafer.
Optionally, described to include: in first surface formation polysilicon layer
Undoped polysilicon layer and p-type polysilicon layer are formed in the first surface.
Optionally, the described pair of film layer for being located at the first surface carries out out film process and includes:
Laser is carried out to the film layer for being located at the first surface and opens film process.
Optionally, the first surface regional area in silicon wafer forms n+ layers using high temperature propulsion mode, wherein institute
Before the surface opposite for receiving illumination for stating first surface and the silicon wafer further include:
Making herbs into wool processing is carried out to the surface for receiving illumination；
The first surface is processed by shot blasting.
The application also provides a kind of IBC battery, the IBC including the production of IBC battery production method described in any of the above-described kind
Battery.
Optionally, the Thickness range of the polysilicon layer is 10nm-20nm, including endpoint value.
IBC battery production method provided herein is pushed away including the first surface regional area in silicon wafer using high temperature
N+ layers are formed into mode, wherein the surface opposite for receiving illumination of the first surface and the silicon wafer；In the first surface
Formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；Film is carried out out to the film layer for being located at the first surface
Processing, to form gap；Electrode is formed in the gap.Pass through deposit polycrystalline silicon layer in the application IBC battery production method,
Replace the printing of boron slurry, polysilicon layer acts not only as p+ layers, is also used as emission layer, increases the biography of photo-generated carrier
It is defeated, to increase IBC battery performance.In addition, the application also provides a kind of IBC battery having the above advantages.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the flow chart for making IBC battery in the prior art；
Fig. 2 is a kind of flow chart of IBC battery production method provided by the embodiment of the present application；
Fig. 3 is another flow chart of IBC battery production method provided by the embodiment of the present application；
Fig. 4 is another flow chart of IBC battery production method provided by the embodiment of the present application.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, prepared IBC battery, photoelectric conversion efficiency, short circuit are electric in the prior art
Stream, open-circuit voltage etc. performance are bad, need to be promoted.
In view of this, this application provides a kind of IBC battery production method, referring to FIG. 2, Fig. 2 is the embodiment of the present application
A kind of flow chart of provided IBC battery production method, this method comprises:
Step S201: in the first surface regional area of silicon wafer, n+ layers are formed using high temperature propulsion mode, wherein described
The surface opposite for receiving illumination of first surface and the silicon wafer.
Specifically, the regional area covering phosphorus slurry of the first surface in silicon wafer, using high temperature propulsion mode, the of silicon wafer
The regional area on one surface forms n+ layers.Silicon wafer first surface regional area covering phosphorus slurry, the step for be located at formed
Before passivation film, slurry is easier to be doped into n+ layers of silicon wafer formation；Using high temperature propulsion mode, obtains phosphorus and be evenly distributed, be deep
Spend moderate n+ layer.
Specifically, in one embodiment of the application, in the partial zones of the first surface of silicon wafer by the way of printing
Domain covers phosphorus slurry, and still, the application is to this and is not specifically limited, in another embodiment of the application, using spin coating
Mode, can be to avoid using Printing screen, save the cost in the regional area covering phosphorus slurry of the first surface of silicon wafer.
Step S202: the first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped.
Specifically, the region other than n+ layers of first surface of silicon wafer forms polysilicon layer.
It should be noted that the mode for forming polysilicon layer and be not specifically limited in the embodiment of the present application, it can be certainly
Row selection.For example, polysilicon layer can be formed using the method for plasma reinforced chemical vapour deposition, or use low pressure chemical
The method of vapor deposition forms polysilicon layer.The concrete operating principle of two methods, has been well known to those skilled in the art, right
This is no longer described in detail.
It should also be noted that, being not specifically limited in the present embodiment to the polysilicon layer thicknesses, depend on the circumstances.
Specifically, in one embodiment of the application, when forming the polysilicon layer, polysilicon layer thicknesses value range
It for 10nm-20nm, including endpoint value, avoids polysilicon layer thicknesses too small, it is limited to promote photoelectric conversion efficiency, while avoiding polycrystalline
Silicon layer thickness is too big, and the required process time extends, and leads to low efficiency, while wasting material, increases cost.
It should also be noted that, to the number of plies for forming polysilicon layer and being not specifically limited in the present embodiment.
Step S203: anti-reflection film layer is formed on the surface for receiving illumination.
Anti-reflection film layer is formed on the surface that silicon wafer receives illumination, to enhance the light-absorbing quantity of silicon wafer, photoelectricity is promoted and turns
Change efficiency.
It should be noted that the method for forming anti-reflection film layer and being not specifically limited in the present embodiment, depend on the circumstances.
Specifically, using plasma reinforced chemical vapour deposition method, being connect in silicon wafer in one embodiment of the application
The surface being illuminated by the light forms anti-reflection film layer.In another embodiment of the application, using low-pressure chemical vapor deposition in silicon wafer
The surface for receiving illumination forms anti-reflection film layer.The concrete operating principle of two methods, has been well known to those skilled in the art, right
This is no longer described in detail.
Step S204: passivation film is formed away from the surface of the silicon wafer in described n+ layers and the polysilicon layer.
It should be noted that in the present embodiment to formed passivation film method and be not specifically limited, can optionally and
It is fixed.
Specifically, in one embodiment of the application, it can be using plasma reinforced chemical vapour deposition method in n+
Layer and polysilicon layer are away from the surface of silicon wafer formation passivation film.In another embodiment of the application, using hot-wire chemical
It is vapor-deposited and forms passivation film away from the surface of silicon wafer in n+ layers and polysilicon layer.The concrete operating principle of two methods,
It is well known to those skilled in the art, this is no longer described in detail.
Step S205: film process is carried out out to the film layer for being located at the first surface, to form gap.
It should be noted that the mode of split film process is not specifically limited in the present embodiment, can voluntarily select.
Step S206: electrode is formed in the gap.
Specifically, the regional area covering phosphorus slurry of the first surface in silicon wafer, using high temperature propulsion mode, the of silicon wafer
When the regional area on one surface forms n+ layers, while phosphorosilicate glass is also formed, further, when forming polysilicon layer, in silicon
The first surface of piece all covers polysilicon layer, and then phosphorosilicate glass and the removal of the polysilicon layer of n+ layers of corresponding region, can subtract
Few influence to electrode is formed, to promote the performance of IBC battery.
IBC battery production method provided herein, including the first surface regional area in the silicon wafer, using height
Warm propulsion mode forms n+ layers, wherein the surface opposite for receiving illumination of the first surface and the silicon wafer；Described first
Surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；The film layer for being located at the first surface is carried out
Film process is opened, to form gap；Electrode is formed in the gap.Pass through deposit polycrystalline in the application IBC battery production method
Silicon layer replaces the printing of boron slurry, and polysilicon layer acts not only as p+ layers, is also used as emission layer, increases photoproduction current-carrying
The transmission of son, to increase IBC battery performance.
Based on any of the above embodiments, in one embodiment of the application, the condition of the high temperature propulsion are as follows:
Under nitrogen atmosphere, temperature range is at 700 DEG C -850 DEG C, and time range is in 20min-60min, including all endpoints
Value.
Based on any of the above embodiments, in one embodiment of the application, described pair is located at first table
The film layer in face carries out out film process
Laser is carried out to the film layer for being located at the first surface and opens film process.
In the present embodiment, the mode of laser die sinking processing is selected to carry out out film process, work to the film layer of silicon wafer first surface
Skill is simple, and the width of grid line, position can be adjusted according to demand.
Referring to FIG. 3, Fig. 3 is another flow chart of IBC battery production method provided by the embodiment of the present application.
Step S301: oxide layer is formed on the surface of the silicon wafer.
Specifically, the whole surface in silicon wafer forms one layer of membranous layer of silicon oxide.
Step S302: in the first surface regional area of silicon wafer, n+ layers are formed using high temperature propulsion mode, wherein described
The surface opposite for receiving illumination of first surface and the silicon wafer.
Step S303: the first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped.
Step S304: anti-reflection film layer is formed on the surface for receiving illumination.
Step S305: passivation film is formed away from the surface of the silicon wafer in described n+ layers and the polysilicon layer.
Step S306: film process is carried out out to the film layer for being located at the first surface, to form gap.In the present embodiment
In, when selection laser, which opens film mode, carries out out film process to the film layer of the first surface of silicon wafer, n+ layers of corresponding region are carried out
Select low-energy laser when opening film process, do not remove removing oxide layer, namely do not impact to oxide layer, to p+ layers of corresponding region into
Row selects high energy laser when opening film process, removes removing oxide layer.
It should be pointed out that the high-energy of above-mentioned laser and low energy are in contrast, for example, generation laser energy used
Its one timing of power of the equipment of amount, when carrying out out film process to n+ layers of corresponding region, laser energy selects some percentage of power
Than when carrying out out film process to p+ layers of corresponding region, laser energy selects another higher percentage of power.
Step S307: electrode is formed in the gap.
Based on any of the above embodiments, described in the first surface shape in one embodiment of the application
Include: at polysilicon layer
Undoped polysilicon layer and p-type polysilicon layer are formed in the first surface.
In the embodiment of the present application, sequentially form undoped polysilicon layer and p-type polysilicon layer in silicon wafer first surface, i.e., it is more
Crystal silicon layer includes two layers of film layer as emission layer and further enhances the transport of photo-generated carrier, to promote IBC cell photoelectric
The performance of transfer efficient, short circuit current and open-circuit voltage etc..
Referring to FIG. 4, Fig. 4 is another flow chart of IBC battery production method provided by the embodiment of the present application.
Step S401: making herbs into wool processing is carried out to the surface for receiving illumination；The first surface is processed by shot blasting.
Step S402: in the first surface regional area of silicon wafer, n+ layers are formed using high temperature propulsion mode, wherein described
The surface opposite for receiving illumination of first surface and the silicon wafer.
Step S403: the first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped.
Step S404: anti-reflection film layer is formed on the surface for receiving illumination.
Step S405: passivation film is formed away from the surface of the silicon wafer in described n+ layers and the polysilicon layer.
Step S406: film process is carried out out to the film layer for being located at the first surface, to form gap.
Step S407: electrode is formed in the gap.
In the present embodiment, making herbs into wool processing is carried out to the surface of the reception illumination of silicon wafer, increases the light-absorbing quantity of silicon wafer,
To improve the photoelectric conversion efficiency of IBC battery, also the first surface of silicon wafer is processed by shot blasting, removes the one of silicon chip surface
A little mechanical damages and Staining, to obtain surface smooth, smooth, without any damage.
Below with a concrete condition, IBC battery production method in the application is further elaborated.
Step 1: the surface for receiving illumination to silicon wafer carries out making herbs into wool processing；First surface is processed by shot blasting, the first table
The surface opposite for receiving illumination in face and silicon wafer；
Step 2: chemically forming oxide layer in all surface of silicon wafer；
Step 3: the regional area of the first surface in silicon wafer, printing phosphorus is starched and high temperature propulsion mode is used to form n+ layers；
Step 4: being sequentially depositing in silicon wafer first surface undoped using the method for plasma reinforced chemical vapour deposition
Polysilicon layer and p-type polysilicon layer；
Step 5: with the undoped polysilicon layer and p-type polysilicon of hydrofluoric acid removal phosphorosilicate glass and n+ layers of corresponding region
Layer；
Step 6: receiving illuminating surface using the method for plasma reinforced chemical vapour deposition in silicon wafer and forming silicon nitride
Antireflective film；
Step 7: sequentially forming aluminium oxide in silicon wafer first surface using the method for plasma reinforced chemical vapour deposition
Film layer and silicon nitride film layer；
Step 8: opening film mode using laser, film process is carried out out to the film layer of silicon wafer first surface and forms gap, is not gone
Except the oxide layer of n+ layers of corresponding region, the oxide layer of p+ layers of corresponding region is removed；
Step 9: the plating metal nickel in gap；
Step 10: being handled using low temperature annealing process, then by test, filter out qualified IBC battery.
The application also provides a kind of IBC battery, including what is made in any of the above-described kind of IBC battery production method embodiment
IBC battery.
Specifically, the polysilicon layer of IBC battery is two film of undoped polysilicon layer and p-type polysilicon layer in the present embodiment
Layer.
Optionally, on the basis of the above embodiments, in one embodiment of the application, in the polysilicon layer not
The polysilicon layer and p-type polysilicon thickness degree value range of doping are 10nm-20nm, including endpoint value, are avoided undoped
Polysilicon layer and p-type polysilicon thickness degree are too small, promoted photoelectric conversion efficiency it is limited, while avoid undoped polysilicon layer and
P-type polysilicon thickness degree is too big, and the required process time extends, and leads to low efficiency, while wasting material, increases cost.
IBC battery provided by the embodiment of the present application, including the first surface regional area in the silicon wafer, using high temperature
Propulsion mode forms n+ layers, wherein the surface opposite for receiving illumination of the first surface and the silicon wafer；In first table
Face formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；The film layer for being located at the first surface is opened
Film process, to form gap；Electrode is formed in the gap.IBC battery in the application, polysilicon layer replace the print of boron slurry
For scopiform at p+ layers, polysilicon layer acts not only as p+ layers, is also used as emission layer, increases the transmission of photo-generated carrier, from
And increase IBC battery performance.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
IBC battery and preparation method thereof provided herein is described in detail above.Tool used herein
The principle and implementation of this application are described for body example, the above embodiments are only used to help understand this Shen
Method and its core concept please.It should be pointed out that for those skilled in the art, not departing from the application
Under the premise of principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification also fall into the application right
It is required that protection scope in.
Claims (8)
1. a kind of IBC battery production method characterized by comprising
In the first surface regional area of silicon wafer, form n+ layers using high temperature propulsion mode, wherein the first surface with it is described
The surface opposite for receiving illumination of silicon wafer；
The first surface formed polysilicon layer, and the polysilicon layer and described n+ layers it is not be overlapped；
Film process is carried out out to the film layer for being located at the first surface, to form gap；
Electrode is formed in the gap.
2. IBC battery production method as described in claim 1, which is characterized in that the condition that the high temperature promotes are as follows:
Under nitrogen atmosphere, temperature range is at 700 DEG C -850 DEG C, and time range is in 20min-60min, including all endpoint values.
3. IBC battery production method as claimed in claim 2, which is characterized in that in the first surface part in silicon wafer
Region is formed before n+ layers further include:
Oxide layer is formed on the surface of the silicon wafer.
4. IBC battery production method as claimed in claim 3, which is characterized in that described to form polycrystalline in the first surface
Silicon layer includes:
Undoped polysilicon layer and p-type polysilicon layer are formed in the first surface.
5. such as the described in any item IBC battery production methods of Claims 1-4, which is characterized in that described pair is located at described first
The film layer on surface carries out out film process
Laser is carried out to the film layer for being located at the first surface and opens film process.
6. IBC battery production method as described in claim 1, which is characterized in that the first surface partial zones in silicon wafer
Domain forms n+ layer using high temperature propulsion mode, wherein the surface opposite for receiving illumination of the first surface and the silicon wafer it
Before further include:
Making herbs into wool processing is carried out to the surface for receiving illumination；
The first surface is processed by shot blasting.
7. a kind of IBC battery, which is characterized in that including IBC battery production method system such as claimed in any one of claims 1 to 6
The IBC battery of work.
8. IBC battery as claimed in claim 7, which is characterized in that the Thickness range of the polysilicon layer is 10nm-
20nm, including endpoint value.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104157717A (en) * | 2014-08-26 | 2014-11-19 | 中国电子科技集团公司第四十八研究所 | Preparation method of all-back electrode N-type crystalline silicon heterojunction solar cells |
| CN105428453A (en) * | 2014-09-18 | 2016-03-23 | 上海神舟新能源发展有限公司 | Preparation method of inter-digital back contact battery |
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| CN106653887A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Back junction backcontact solar cell |
| CN108336154A (en) * | 2018-02-02 | 2018-07-27 | 中国科学院微电子研究所 | Crystal silicon solar energy battery and preparation method thereof |
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| US20160111582A1 (en) * | 2008-12-19 | 2016-04-21 | Stmicroelectronics S.R.L. | Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process |
| CN104157717A (en) * | 2014-08-26 | 2014-11-19 | 中国电子科技集团公司第四十八研究所 | Preparation method of all-back electrode N-type crystalline silicon heterojunction solar cells |
| CN105428453A (en) * | 2014-09-18 | 2016-03-23 | 上海神舟新能源发展有限公司 | Preparation method of inter-digital back contact battery |
| CN106653887A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Back junction backcontact solar cell |
| CN108336154A (en) * | 2018-02-02 | 2018-07-27 | 中国科学院微电子研究所 | Crystal silicon solar energy battery and preparation method thereof |
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