CN109637934B - 电子器件及制造电子器件的方法 - Google Patents

电子器件及制造电子器件的方法 Download PDF

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Publication number
CN109637934B
CN109637934B CN201811326650.XA CN201811326650A CN109637934B CN 109637934 B CN109637934 B CN 109637934B CN 201811326650 A CN201811326650 A CN 201811326650A CN 109637934 B CN109637934 B CN 109637934B
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integrated circuit
fan
electronic device
stiffener
encapsulation material
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CN109637934A (zh
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栾竟恩
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Italian Semiconductor International Co
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STMicroelectronics SA
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Abstract

本发明涉及电子器件及制造电子器件的方法。电子器件可以包括：集成电路(IC)；导电连接件，耦合至IC；散热层，邻近IC并且与导电连接件相对。电子器件可以包括：封装材料，围绕IC和导电连接件；再分布层，具有耦合至导电连接件的导电迹线；加强件，位于散热层和再分布层之间；以及扇出部件，位于散热层和再分布层之间，并且位于封装材料内。

Description

电子器件及制造电子器件的方法
本申请为申请日为2014年10月11日、申请号为201410537567.2、发明名称为“具有再分布层和加强件的电子器件及相关方法”的发明专利申请的分案申请。
技术领域
本公开涉及集成电路器件领域，并且更具体地涉及集成电路器件的封装以及相关方法。
背景技术
在具有集成电路(IC)的电子器件中，IC典型地安装在电路板上。为了电路板和IC之间的电耦合连接，IC典型地被“封装”。IC封装通常提供用于物理保护IC的小包装以及提供用于耦合至电路板的接触焊盘。在一些应用中，封装IC可以通过焊接凸点耦合至电路板。
IC封装的一种手段包括方形扁平无引脚(QFN)封装。QFN封装可以提供一些优点，诸如减小的引线电感、近芯片尺度足迹、薄侧面以及低重量。另外，QFN封装典型地包括周界I/O焊盘(perimeter I/O pad)以便于电路板迹线布线，并且露出的铜裸片焊盘(die-pad)技术提供增强的热和电性能。QFN封装可能正好适合于其中尺寸、重量、以及热和电性能重要的应用。
首先参照图1，现在描述典型的球栅阵列(BGA)电子器件200。电子器件200包括散热层201、一对加强件(stiffener)203a-203b、以及位于加强件和散热层之间的粘合层202a、202c。电子器件200包括其中具有导电迹线208的电路板层205、位于电路板层和加强件203a-203b之间的另一粘合层204a-204b、以及由电路板层承载的多个球状接触件207a-207l。电子器件200包括IC 206、将IC耦合至电路板层205的多个球状接触件209a-209j、位于散热层201和IC之间的粘合层202b、以及在IC周围并且围绕多个球状接触件的底部填充材料210。
发明内容
总体地，电子器件可以包括：IC；多个导电连接件，耦合至IC；以及散热层，邻近IC并且与多个导电连接件相对。电子器件可以包括：封装材料，围绕IC和多个导电连接件；再分布层，具有耦合至多个导电连接件的多个导电迹线；加强件，位于散热层和再分布层之间；以及扇出部件，位于散热层和再分布层之间并且位于封装材料内。
更具体地，电子器件可以进一步包括位于散热层和IC之间的热界面层。电子器件可以进一步包括耦合至再分布层的多个导电焊球。加强件可以具有邻近封装材料的内表面和限定电子器件的外部表面的外表面。加强件可以邻接并且保持封装材料。
再分布层可以包括介电层。多个导电迹线由介电层承载，并且耦合至多个导电连接件。扇出部件可以包括例如陶瓷材料。多个导电连接件可以包括焊接凸点和导柱(pillar)中的至少一个。
另一方面涉及一种制造电子器件的方法。该方法可以包括：形成多个导电连接件，该多个导电连接件耦合至IC；将散热层定位成邻近IC并且与多个导电连接件相对；以及形成封装材料，该封装材料围绕IC和多个导电连接件。该方法可以包括：定位再分布层，该再分布层具有耦合至多个导电连接件的多个导电迹线；将加强件定位成位于散热层和再分布层之间；以及将扇出部件定位成位于散热层和再分布层之间并且位于封装材料内。
附图说明
图1是根据现有技术的电子器件的截面图。
图2是根据本公开的电子器件的截面图。
图3-图9是用于制造图2中电子器件的方法的各步骤的截面图。
具体实施方式
现有技术的电子器件200可能存在一些潜在缺陷。由于热膨胀系数(CTE)失配，电子器件200可能会有关于球状接触件207a-207l、209a-209j的可靠性问题。由于外部物理力和热，电子器件200还可能受困于翘曲。此外，电子器件200的设计产生高成本制造工艺和降低的产量。电子器件200还受困于具有大封装尺寸，同时还伴随着侧面厚、布线差、散热不良、噪声控制不好、以及射频(RF)屏蔽不佳的问题。
现在将参照附图更为全面地描述本公开，其中示出了本发明的若干实施例。然而，本公开可以很多不同的形式实施，并且不应被解释为限于本文所描述的实施例。当然，提供这些实施例是为了使本公开充分和完整，并且可以向本领域技术人员全面传达本公开的保护范围。本文中相同的标号表示相同的元件。
参照图2，描述了根据本公开的电子器件10。电子器件10示意性地包括IC 36，该IC具有多个导电接触件20a-20e、连接至IC的导电接触件的多个导电连接件21a-21e、以及邻近IC并与多个导电连接件相对的散热层11。多个导电连接件21a-21e可以包括多个焊接凸点或者多个导柱(例如，铜、铝)。
电子器件10示意性地包括：封装材料14，围绕IC 36和多个导电连接件21a-21e；再分布层16，具有耦合至多个导电连接件的多个导电迹线18a-18k；加强件13，位于散热层11和再分布层之间；以及扇出部件15，位于散热层和再分布层之间，并且位于封装材料内。扇出部件15可以包括例如陶瓷和/或有机材料。扇出部件15横向地定位在加强件13和IC 36之间。有利地，解决了电路板层205和球状接触件207a-207l、209a-209j的CTE失配的现有技术的问题。
更具体地，电子器件10示意性地包括位于散热层11和IC 36之间的热界面层12。电子器件10示意性地包括由再分布层16承载的多个导电焊球19a-19k，以提供BGA型连接。
加强件13具有邻近封装材料14的内表面23和限定电子器件10的外部表面的外表面22。加强件13可以利用内表面23邻接和/或保持封装材料14。
再分布层16示意性地包括介电层17。多个导电迹线18a-18k由介电层17承载，并且耦合至多个导电连接件21a-21e。有利地，电子器件10没有如图1的现有技术手段一样在IC36下方使用衬底。在电子器件10中，衬底被替换为再分布层16。
附加地，并且有利地，还可以使用晶片级封装技术来制造电子器件10，并且电子器件10可以包括诸如电容器的集成电子部件。此外，电子器件10缺少用于扇出的硅插入件，该硅插入件而是被移至一侧。与现有技术的设计相比，电子器件10还提升了可靠性，并且解决了倒装凸块可靠性和BGA接合可靠性的冲突。另外，电子器件10具有改进的散热效率、减少的翘曲以及低材料CTE失配。
另一方面涉及一种制造电子器件10的方法。该方法可以包括：形成多个导电连接件21a-21e，该多个导电连接件耦合至IC 36；将散热层11定位成邻近IC并且与多个导电连接件相对；以及形成封装材料14，该封装材料围绕IC和多个导电连接件。该方法可以包括：定位再分布层16，该再分布层16具有耦合至多个导电连接件21a-21e的多个导电迹线18a-18k；将加强件13定位成位于散热层11和再分布层之间；以及将扇出部件15定位成位于散热层和再分布层之间并且位于封装材料14内。
现另外参照图3-图9，描述用于制造电子器件10的方法的示例性实施例。应理解，示出的示例产生了两个电子器件10a、10b，仅用于图示目的，并且公开的方法可以使用晶片级技术同时制造更多的器件。
如图3所示，制备用于制造步骤的基底，该基底包括载体层31以及在载体层31上的粘合层32。如图4所示，例如使用贴装(PnP，pick and place)机将IC 36a-36b、扇出部件15a-15b、和加强件13a-13b放置在粘合层32上。如图5所示，在载体层31上方形成封装材料14。如图6所示，使载体层31的上表面经受研磨步骤以移除多余的封装材料14。如图7所示，在载体层31上反转封装部件，并且形成再分布层16。如图8所示，邻近再分布层16形成多个导电焊球19a-19k。如图9所示，使用图示的切割刀(saw blade)33(切割刀在通过粘合层32时半路停止)分离模制的面板或晶片或封装部件。下一步可以包括分解粘合层32以释放电子器件10a、10b，并附接相应的散热层11a、11b。
本领域技术人员在得到上文描述和相关附图中呈现的教导之后能够想到本公开的很多修改和其他实施例。因此，应理解，本公开不旨在限于披露的特定实施例，而是旨在将各种修改和实施例包含在所附权利要求的范围内。

Claims (28)

1.一种电子器件，包括：
集成电路；
多个导电连接件，耦合至所述集成电路；
散热层，邻近所述集成电路，并且与所述多个导电连接件相对；
封装材料，所述集成电路和所述多个导电连接件位于所述封装材料中；
再分布层，耦合至所述多个导电连接件；
加强件，位于所述散热层和所述再分布层之间，所述加强件利用内表面邻接和保持所述封装材料；以及
扇出部件，位于所述散热层和所述再分布层之间，并且横向地定位在所述加强件与所述集成电路之间，并且位于所述封装材料中。
2.根据权利要求1所述的电子器件，进一步包括位于所述散热层和所述集成电路之间的热界面层。
3.根据权利要求1所述的电子器件，进一步包括耦合至所述再分布层的多个导电焊球。
4.根据权利要求1所述的电子器件，其中，所述加强件具有邻近所述封装材料的内表面和限定所述电子器件的外部表面的外表面。
5.根据权利要求1所述的电子器件，其中，所述加强件邻接所述封装材料。
6.根据权利要求1所述的电子器件，其中，所述扇出部件包括陶瓷材料。
7.根据权利要求1所述的电子器件，其中，所述多个导电连接件包括焊接凸点和导柱中的至少一个。
8.一种制造电子器件的方法，所述方法包括：
提供集成电路，所述集成电路具有多个导电连接件，所述多个导电连接件被耦合至所述集成电路的第一表面；
将扇出部件定位成邻近所述集成电路；
将加强件定位成邻近所述扇出部件，使得所述扇出部件横向地定位在所述加强件与所述集成电路之间；
形成封装材料，使得所述集成电路、所述多个导电连接件和所述扇出部件位于所述封装材料中，并且使得利用所述加强件的内表面邻接和保持所述封装材料，其中所述扇出部件通过所述封装材料的第一部分与所述集成电路分开，并且所述加强件通过所述封装材料的第二部分与所述扇出部件分开；
将再分布层电连接至所述多个导电连接件；以及
将散热件定位成邻近所述集成电路的第二表面，所述第二表面与所述第一表面相对，其中所述扇出部件和所述加强件从所述散热件垂直延伸至所述再分布层。
9.根据权利要求8所述的方法，其中所述散热件包括散热层和位于所述散热层和所述集成电路之间的热界面层。
10.根据权利要求8所述的方法，进一步包括将多个导电焊球电耦合至所述再分布层。
11.根据权利要求8所述的方法，其中，所述加强件具有邻近所述封装材料的内表面和限定所述电子器件的外部表面的外表面。
12.根据权利要求8所述的方法，其中，所述多个导电连接件包括焊接凸点或导柱。
13.一种制造电子器件的方法，所述方法包括：
提供集成电路，所述集成电路具有多个导电连接件，所述多个导电连接件被耦合至所述集成电路的第一表面；
将扇出部件定位成邻近所述集成电路，其中所述扇出部件包括有机材料或陶瓷材料；
将加强件定位成邻近所述扇出部件，使得所述扇出部件横向地定位在所述加强件与所述集成电路之间；
形成封装材料，使得所述集成电路、所述多个导电连接件和所述扇出部件位于所述封装材料中，并且使得利用所述加强件的内表面邻接和保持所述封装材料，其中所述扇出部件通过所述封装材料的第一部分与所述集成电路分开，并且所述加强件通过所述封装材料的第二部分与所述扇出部件分开；
将再分布层电连接至所述多个导电连接件；以及
将散热件定位成邻近所述集成电路的第二表面，所述第二表面与所述第一表面相对。
14.根据权利要求13所述的方法，其中所述扇出部件包括有机材料。
15.根据权利要求13所述的方法，其中所述扇出部件包括陶瓷材料。
16.一种制造电子器件的方法，包括：
形成模制的面板，所述模制的面板包括多个集成电路、多个扇出部件和多个加强件，其中所述集成电路、所述扇出部件和所述加强件都嵌入在封装材料中；
在所述集成电路和所述扇出部件上方形成再分布层，所述再分布层与所述集成电路的接触件电耦合；以及
分割所述模制的面板以形成多个电子器件，每个电子器件包括通过所述封装材料的第一部分而与扇出部件分开的集成电路和通过所述封装材料的第二部分而与所述扇出部件分开的加强件。
17.根据权利要求16所述的方法，进一步包括：邻近所述多个电子器件中的每个电子器件的所述集成电路，形成散热层。
18.根据权利要求17所述的方法，进一步包括：在所述散热层和所述集成电路之间形成热界面层。
19.根据权利要求16所述的方法，进一步包括：将多个导电焊球附接至所述再分布层。
20.根据权利要求16所述的方法，其中所述扇出部件均包括陶瓷材料。
21.根据权利要求16所述的方法，其中所述扇出部件均包括有机材料。
22.根据权利要求16所述的方法，其中所述再分布层包括介电层和由所述介电层承载的多个导电迹线，所述导电迹线被电耦合至所述集成电路的接触件。
23.根据权利要求16所述的方法，其中针对每个电子器件，所述加强件具有邻近所述封装材料的内表面和限定所述电子器件的外部表面的外表面。
24.一种制造电子器件的方法，包括：
将多个集成电路、多个扇出部件和多个加强件粘合至载体，所述扇出部件均包括陶瓷材料或有机材料；
在所述载体上方并且在所述集成电路、所述扇出部件和所述加强件之间形成封装材料，使得所述集成电路、所述扇出部件和所述加强件都位于所述封装材料中；
在所述集成电路和所述扇出部件上方形成再分布层；
邻近所述再分布层形成多个导电焊球，所述焊球通过所述再分布层被电耦合至所述集成电路的接触件；以及
执行分离步骤以形成多个电子器件。
25.根据权利要求24所述的方法，其中所述分离步骤包括：切割通过所述封装材料以及分解粘合层以释放所述电子器件。
26.根据权利要求24所述的方法，进一步包括：将散热层附接至所述电子器件中的每个电子器件。
27.根据权利要求24所述的方法，进一步包括：执行研磨步骤，以从每个集成电路的下表面移除多余的封装材料，然后将每个集成电路的所述下表面附接至临时载体，并且然后形成所述再分布层。
28.根据权利要求24所述的方法，其中所述粘合步骤包括：使用贴装机将所述集成电路、所述扇出部件和所述加强件放置到粘合件，所述粘合件覆盖在所述载体上方。
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