CN109616865A - A kind of mode of laser group - Google Patents
A kind of mode of laser group Download PDFInfo
- Publication number
- CN109616865A CN109616865A CN201811561398.0A CN201811561398A CN109616865A CN 109616865 A CN109616865 A CN 109616865A CN 201811561398 A CN201811561398 A CN 201811561398A CN 109616865 A CN109616865 A CN 109616865A
- Authority
- CN
- China
- Prior art keywords
- laser
- crystal
- mirror
- pedestal
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 71
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000006117 anti-reflective coating Substances 0.000 claims description 15
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 3
- 239000008710 crystal-8 Substances 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- QBLDFAIABQKINO-UHFFFAOYSA-N barium borate Chemical compound [Ba+2].[O-]B=O.[O-]B=O QBLDFAIABQKINO-UHFFFAOYSA-N 0.000 description 2
- YISOXLVRWFDIKD-UHFFFAOYSA-N bismuth;borate Chemical compound [Bi+3].[O-]B([O-])[O-] YISOXLVRWFDIKD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical class [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of mode of laser groups, including shell, pedestal is provided in shell, laser light source and laser module are provided on pedestal, laser module constitutes laser resonator, outlet opening is provided on shell, outlet opening is equipped with light passing mirror, and the laser that laser light source generates is exported by laser module from light passing mirror.By laser crystal, nonlinear crystal, outgoing mirror and/or input mirror, fixation forms laser module on the base together for invention; by the working performance for adjusting the position optimization mode of laser group of laser crystal and nonlinear crystal; thus it ensure that higher working performance while reducing the volume of mode of laser group; the configuration of the present invention is simple simultaneously is convenient for large-scale production.
Description
Technical field
The present invention relates to a kind of mode of laser groups, belong to laser technology field.
Background technique
With the development of electronic technology field, laser display is as a kind of good colorfulness and brightness uniformity of possessing
Technology, and so that it has been obtained further development in recent years by its higher service life and flexible screen size.It does not look over so as to check
Preceding light source only has red blue dichromatism laser to possess more mature technology, and existing green semiconductor laser light resource is also far not
It is able to satisfy the standard that laser television is shown.Although the technology achieves certain development, it is in mass production and business
Change application above to need to be pushed further into.And the main representative of gas laser has argon ion gas laser and copper vapor laser
Device, although can reach the power of hectowatt magnitude, its is bulky, structure is complicated, is not easy to large-scale production.
Summary of the invention
The present invention provides a kind of mode of laser group, solve that conventional laser equipment volume is huge, structure is complicated, is not easy to advise
The problem of modelling produces.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that:
A kind of mode of laser group, including shell are provided with pedestal in shell, are provided with laser light source and laser module on pedestal, swash
Optical module constitutes laser resonator, and outlet opening is provided on shell, and outlet opening is equipped with light passing mirror, what laser light source generated
Laser is exported by laser module from light passing mirror.
Laser module includes pedestal, and laser crystal, nonlinear crystal and outgoing mirror are provided on pedestal, along the propagation of laser
Direction, laser crystal, nonlinear crystal and outgoing mirror are arranged successively.
The front surface of laser crystal is successively coated with anti-reflection film and two layers of Anti-reflective coating, and it is anti-that the front surface of outgoing mirror is successively coated with increasing
Film and anti-reflection film.
Laser module includes pedestal, input mirror, laser crystal and nonlinear crystal is provided on pedestal, along the propagation of laser
Direction, input mirror, laser crystal and nonlinear crystal are arranged successively.
The front surface of input mirror is successively coated with anti-reflection film and two layers of Anti-reflective coating, and the rear surface of nonlinear crystal is successively coated with increasing
Anti- film and anti-reflection film.
Laser module includes pedestal, input mirror, laser crystal, nonlinear crystal and outgoing mirror is provided on pedestal, along sharp
The direction of propagation of light, input mirror, laser crystal, nonlinear crystal and outgoing mirror are arranged successively.
The rear surface of input mirror is successively coated with anti-reflection film and two layers of Anti-reflective coating, and the front surface of outgoing mirror is successively coated with Anti-reflective coating
And anti-reflection film.
Position line is provided on pedestal.
Pedestal is L-shaped, and laser light source is arranged on the side wall of vertical section, and laser module is arranged on the top surface of traversing section.
Advantageous effects of the invention: the present invention is by laser crystal, nonlinear crystal, outgoing mirror and/or inputs mirror
Fixation forms laser module on the base together, by the position optimization mode of laser group for adjusting laser crystal and nonlinear crystal
Working performance, thus ensure that higher working performance while reducing the volume of mode of laser group, while structure of the invention letter
It is single, it is convenient for large-scale production.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the first structure chart of laser module；
Fig. 3 is second of structure chart of laser module.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating the present invention
Technical solution, and not intended to limit the protection scope of the present invention.
As shown in Figure 1, a kind of mode of laser group, including shell 2, it is provided with pedestal 1 in shell 2, is provided with laser on pedestal 1
Light source 3 and laser module 4, laser module 4 constitute laser resonator, are provided with outlet opening on shell 2, outlet opening is equipped with
Light passing mirror 5, the laser that laser light source 3 generates are exported by laser module 4 from light passing mirror 5.
Shell 2 is rectangular housing, and shell 2 and pedestal 1 can be integrally formed, and is also possible to pedestal 1 and passes through welding or gluing
Mode be fixed in shell 2, pedestal 1 is generally set up directly on 2 bottom of chamber portion of inner housing, and pedestal 1 and shell 2 are all made of and lead
Hot material is provided with position line on pedestal 1, marks best between different components for the ease of the component on setting pedestal 1
Spacing.
Laser light source 3 and laser module 4 can weld or glued mode is fixed on pedestal 1, and gluing is led using organosilicon
Hot glue, epoxy resin AB glue, heat-conducting silicone grease etc. needs to carry out metalized to parts surface in advance according to welding, above-mentioned
L-shaped is arranged in pedestal 1, and laser light source 3 is arranged on the side wall of vertical section, is directed at laser module 4, and laser light source 3 can be half
Conductor laser, gas laser, solid state laser etc., laser module 4 are arranged on the top surface of traversing section.
Laser module 4 has following three kinds of structures:
The first structure is provided with laser crystal 7, nonlinear crystal 8 on pedestal 6 as shown in Fig. 2, laser module 4 includes pedestal 6
With outgoing mirror 9, along the direction of propagation of laser, laser crystal 7, nonlinear crystal 8 and outgoing mirror 9 are arranged successively, laser crystal 7,
Nonlinear crystal 8 and outgoing mirror 9 are arranged along straight line, and incident laser sequentially passes through laser crystal 7,8 and of nonlinear crystal
Outgoing mirror 9, nonlinear crystal 8 are located at beam diameter minimum, and the front surface of laser crystal 7 is successively coated with anti-reflection film (808nm)
With two layers of Anti-reflective coating (internal layer 1064nm, outer layer 532nm), the front surface of outgoing mirror 9 is successively coated with Anti-reflective coating (1064nm)
With anti-reflection film (532nm).
Pedestal 6 is also that Heat Conduction Material is constituted, and opens up two U-shaped grooves on pedestal 6, laser crystal 7 and nonlinear crystal 8 are set
It sets in a U-shaped groove, convenient for adjusting spacing between the two, outgoing mirror 9 is arranged in another U-shaped groove, and laser is brilliant
Body 7, nonlinear crystal 8 and outgoing mirror 9 are all made of glued mode and fix.
Laser crystal 7 is Nd-doped yttrium vanadate (Nd:YVO4), neodymium-doped gadolinium vanadate (Nd:GdVO4) or neodymium-doped yttrium-aluminum garnet
(Nd:YAG), Nd in laser crystal 7+3The molecular percentage content of ion is 0.5% -3% according to different power requirements.Laser is brilliant
Body 7 has higher absorption coefficient and biggish stimulated emission cross section, makes with the cooperation of nonlinear crystal 8 with high nonlinear coefficient
With preferable frequency-doubling conversion efficiency can be obtained.
Nonlinear crystal 8 can use periodic polarized lithium niobate (PPLN) crystal, can adulterate one in lithium columbate crystal
The magnesia of content is determined to improve the photo-damage resistance of crystal, can also adulterate other common substances.Nonlinear crystal 8 may be used also
To be periodic polarized lithium tantalate (PPLT) crystal, periodic polarized near-stoichiometric lithium tantalate (PPSLT) crystal, period
Property polarization potassium titanyl phosphate (PPKTP) crystal, potassium titanyl phosphate (KTP) crystal, barium metaborate (BB0) crystal, bismuth borate
(BIBO) crystal or three lithium borates (LB0) crystal.
Outgoing mirror 9 can be concavees lens or plane mirror, and its primary optical axis need to be parallel with light source.
Second of structure is provided with input mirror 10, laser crystal on pedestal 6 as shown in figure 3, laser module 4 includes pedestal 6
7 and nonlinear crystal 8, along the direction of propagation of laser, inputs mirror 10, laser crystal 7 and nonlinear crystal 8 and be arranged successively, input
Mirror 10, laser crystal 7 and nonlinear crystal 8 are arranged along straight line, and incident laser sequentially passes through input mirror 10, laser crystal
7 and nonlinear crystal 8, nonlinear crystal 8 be located at beam diameter minimum, input mirror 10 front surface be successively coated with anti-reflection film
(808nm) and two layers of Anti-reflective coating (internal layer 1064nm, outer layer 532nm), it is anti-that the rear surface of nonlinear crystal 8 is successively coated with increasing
Film (1064nm) and anti-reflection film (532nm).
As in Fig. 2, input mirror 10 can be concavees lens for pedestal 6, laser crystal 7 and nonlinear crystal 8 in Fig. 3
Or plane mirror, and its primary optical axis need to be parallel with light source.
The third structure: laser module 4 includes pedestal 6, and input mirror 10, laser crystal 7, non-linear is provided on pedestal 6
Crystal 8 and outgoing mirror 9 input mirror 10, laser crystal 7, nonlinear crystal 8 and outgoing mirror 9 and successively arrange along the direction of propagation of laser
Column, input mirror 10, laser crystal 7, nonlinear crystal 8 and outgoing mirror 9 are arranged along straight line, and incident laser sequentially passes through defeated
Enter mirror 10, laser crystal 7, nonlinear crystal 8 and outgoing mirror 9, nonlinear crystal 8 is located at beam diameter minimum, inputs mirror 10
Rear surface be successively coated with anti-reflection film (808nm) and two layers of Anti-reflective coating (internal layer 1064nm, outer layer 532nm), outgoing mirror 9
Front surface is successively coated with Anti-reflective coating (1064nm) and anti-reflection film (532nm).
Above-mentioned three's structure, laser light source 3 are that laser crystal 7 provides excitation, the component in laser module 4 as pumping source
Resonant cavity is constituted, pump light enters intracavitary interact with laser crystal 7 and generates fundamental wave, fundamental wave and 8 phase of nonlinear crystal
Interaction generates frequency multiplication light output.Laser module 4 may include input mirror 10 and outgoing mirror 9, can also only include input mirror 10/
Outgoing mirror 9, when only including input mirror 10, the plated film of 8 rear surface of nonlinear crystal is equivalent to outgoing mirror 9, when only including output
When mirror 9, the plated film of 7 front surface of laser crystal is equivalent to input mirror 10.
The front surface of light passing mirror 5 is coated with 532nm anti-reflection film
Laser crystal 7, nonlinear crystal 8, outgoing mirror 9 and/or input mirror 10 are fixed on pedestal 6 together and form laser by invention
Module 4, the working performance of the position optimization mode of laser group by adjusting laser crystal 7 and nonlinear crystal 8, thus swash reducing
It ensure that higher working performance, while the configuration of the present invention is simple while the volume of optical mode group, be convenient for large-scale production.
The present invention is not merely adapted to the frequency multiplication process (such as second-harmonic conversion) generated for green laser, also suitable
Generation for other nonlinear optical process (such as with frequency and frequency dividing) and the laser (such as blue light) of other wavelength.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of mode of laser group, it is characterised in that: including shell, pedestal is provided in shell, is provided with laser light source on pedestal
And laser module, laser module constitute laser resonator, are provided with outlet opening on shell, outlet opening is equipped with light passing mirror,
The laser that laser light source generates is exported by laser module from light passing mirror.
2. a kind of mode of laser group according to claim 1, it is characterised in that: laser module includes pedestal, is arranged on pedestal
Have laser crystal, nonlinear crystal and outgoing mirror, along the direction of propagation of laser, laser crystal, nonlinear crystal and outgoing mirror according to
Secondary arrangement.
3. a kind of mode of laser group according to claim 2, it is characterised in that: the front surface of laser crystal is successively coated with anti-reflection
Film and two layers of Anti-reflective coating, the front surface of outgoing mirror are successively coated with Anti-reflective coating and anti-reflection film.
4. a kind of mode of laser group according to claim 1, it is characterised in that: laser module includes pedestal, is arranged on pedestal
Have input mirror, laser crystal and nonlinear crystal, along the direction of propagation of laser, input mirror, laser crystal and nonlinear crystal according to
Secondary arrangement.
5. a kind of mode of laser group according to claim 4, it is characterised in that: the front surface for inputting mirror is successively coated with anti-reflection film
Anti-reflective coating and anti-reflection film are successively coated with the rear surface of two layers of Anti-reflective coating, nonlinear crystal.
6. a kind of mode of laser group according to claim 1, it is characterised in that: laser module includes pedestal, is arranged on pedestal
There are input mirror, laser crystal, nonlinear crystal and outgoing mirror, along the direction of propagation of laser, inputs mirror, laser crystal, non-linear
Crystal and outgoing mirror are arranged successively.
7. a kind of mode of laser group according to claim 6, it is characterised in that: the rear surface for inputting mirror is successively coated with anti-reflection film
Anti-reflective coating and anti-reflection film are successively coated with the front surface of two layers of Anti-reflective coating, outgoing mirror.
8. a kind of mode of laser group according to claim 1, it is characterised in that: be provided with position line on pedestal.
9. a kind of mode of laser group according to claim 1, it is characterised in that: pedestal is L-shaped, and laser light source is arranged vertical
On the side wall of section, laser module is arranged on the top surface of traversing section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811561398.0A CN109616865A (en) | 2018-12-20 | 2018-12-20 | A kind of mode of laser group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811561398.0A CN109616865A (en) | 2018-12-20 | 2018-12-20 | A kind of mode of laser group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109616865A true CN109616865A (en) | 2019-04-12 |
Family
ID=66010959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811561398.0A Pending CN109616865A (en) | 2018-12-20 | 2018-12-20 | A kind of mode of laser group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109616865A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
| CN203722049U (en) * | 2013-09-14 | 2014-07-16 | 南京长青激光科技有限责任公司 | High power thin type laser module packaging structure and high-power laser packaging |
| CN203747229U (en) * | 2013-11-20 | 2014-07-30 | 南京长青激光科技有限责任公司 | Optical parametric oscillation Q-switching laser module and optical parametric oscillation Q-switching laser packaging structure |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN206878310U (en) * | 2017-05-18 | 2018-01-12 | 青岛镭创光电技术有限公司 | Laser module and laser |
| CN209249903U (en) * | 2018-12-20 | 2019-08-13 | 昆山衍迪激光科技有限公司 | A kind of mode of laser group |
-
2018
- 2018-12-20 CN CN201811561398.0A patent/CN109616865A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468604A (en) * | 2010-11-03 | 2012-05-23 | 北京中视中科光电技术有限公司 | Surface mount device (SMD) type solid laser, and adjusting device, and manufacturing method for SMD type solid laser |
| CN203722049U (en) * | 2013-09-14 | 2014-07-16 | 南京长青激光科技有限责任公司 | High power thin type laser module packaging structure and high-power laser packaging |
| CN203747229U (en) * | 2013-11-20 | 2014-07-30 | 南京长青激光科技有限责任公司 | Optical parametric oscillation Q-switching laser module and optical parametric oscillation Q-switching laser packaging structure |
| CN105140760A (en) * | 2015-09-30 | 2015-12-09 | 中国科学院合肥物质科学研究院 | Medical 6-micrometer waveband optical parameter laser |
| CN206878310U (en) * | 2017-05-18 | 2018-01-12 | 青岛镭创光电技术有限公司 | Laser module and laser |
| CN209249903U (en) * | 2018-12-20 | 2019-08-13 | 昆山衍迪激光科技有限公司 | A kind of mode of laser group |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106229806B (en) | The tunable alaxadrite laser of Raman yellow light pumping | |
| CN101777725A (en) | Full solid-state ultraviolet laser with third harmonic in diode pumping cavity | |
| CN103594914B (en) | A kind of yellow orange light laser based on self-frequency doubling laser crystal | |
| CN102088158B (en) | Method and device for obtaining high-power ultraviolet laser light | |
| CN107086430A (en) | A kind of third harmonic generation ultraviolet laser | |
| CN102074889B (en) | Single frequency visible laser | |
| CN209249903U (en) | A kind of mode of laser group | |
| CN101728757A (en) | All-solid-state laser | |
| CN113078534B (en) | Intracavity cascade pump laser based on composite structure gain medium | |
| CN204103239U (en) | A kind of all solid state single frequency tunable red laser | |
| CN211879768U (en) | Dual-wavelength pumping ultraviolet laser generating device | |
| CN203747230U (en) | High-efficient single-pump-source dual-end symmetric pump laser | |
| CN104577700A (en) | Intermediate infrared laser device with tunable inner cavity OPO | |
| CN109616865A (en) | A kind of mode of laser group | |
| Wang et al. | CW dual-wavelength Nd: YAG laser at 946 and 938.5 nm and intracavity nonlinear frequency conversion with a CMTC crystal | |
| CN101261419A (en) | All-solid-state continuous wave tunable yellow and orange coherent optical source | |
| CN206595543U (en) | A kind of inner chamber Raman Yellow light laser of bicrystal composite gain | |
| CN100438232C (en) | Quasi-continuous high power red, green double-wavelength laser with LD side pumping | |
| CN110247294A (en) | A kind of ultraviolet laser apparatus using laser self frequency-doubling crystal | |
| CN201345493Y (en) | All solid state laser | |
| CN108767634A (en) | A kind of subnanosecond green (light) laser | |
| CN201044328Y (en) | Low-noise full-solid blue ray laser resonant cavity | |
| CN201289958Y (en) | Near-infrared-green laser transition module with temperature control and light control function | |
| CN105633790A (en) | Method for realizing visible laser by GaN laser diode pumping rare earth ion doped tantalate-niobate | |
| CN207183790U (en) | A kind of and intracavity frequency doubling laser of frequency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |