CN107086430A - A kind of third harmonic generation ultraviolet laser - Google Patents
A kind of third harmonic generation ultraviolet laser Download PDFInfo
- Publication number
- CN107086430A CN107086430A CN201710433213.7A CN201710433213A CN107086430A CN 107086430 A CN107086430 A CN 107086430A CN 201710433213 A CN201710433213 A CN 201710433213A CN 107086430 A CN107086430 A CN 107086430A
- Authority
- CN
- China
- Prior art keywords
- frequency
- laser
- crystal
- light
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of third harmonic generation ultraviolet laser, above-mentioned third harmonic generation ultraviolet laser includes seed source, laser amplifier and the three times frequency module of light connects, and seed source is gain switch psec seed source;Laser amplifier is the casacade multi-amplifier of light connects;Three times frequency module includes condenser lens, two frequency-doubling crystals and its heating furnace, frequency tripling crystal and its heating furnace, ultraviolet light separator and collimater successively in light path, wherein condenser lens, two frequency-doubling crystals and its heating furnace, frequency tripling crystal and its coaxial setting of heating furnace, two frequency-doubling crystals are three lithium borates (LBO) crystal of a type-Ⅱphase matching, and frequency tripling crystal is three lithium borates (LBO) crystal of two type-Ⅱphase matchings.The third harmonic generation ultraviolet laser realized according to the present invention, the seed light repetition rate of generation is adjustable, adjustable pulse width, and for picosecond magnitude, and after being single mode, linearly polarized light, amplified and frequency tripling, the feature of Ultra-Violet Laser is consistent with seed light, and power is up to 35W, and efficiency high is up to 50%.
Description
Technical field
The invention belongs to field of lasers, more particularly to a kind of third harmonic generation ultraviolet laser.
Background technology
Ultraviolet (UV) laser has extensive use in industrial micro Process field, the mark of such as industrial part, drilling, draws
Piece, welding, micro Process, electronic package, the micro-component stereo shaping of cutting and medicine equipment etc..In addition, in micro- electricity
Sub-, spectrum analysis, optical data storage, CD control, Atmospheric Survey, photochemistry, photobiology, space optical communication, laser are lured
The material atom fluorescence and UV of hair, which absorb (fluorescence of such as Si atoms induces, freezes and controlled) and medical field, also to be had widely
Application prospect.
Especially in field of industrial processing, because the short photon energy of the wavelength of UV laser is high, its focal beam spot can be smaller,
And high-energy UV photons can directly destroy the chemical bond of material, relative to " hot melt " process of infrared laser, UV Laser Processings
When be " cold erosion " effect, this allow processing size it is smaller, the precision of processing is improved.Existing field of industrial processing
The method for producing ultraviolet light is, as pumping source, to produce frequency tripling by frequency doubling non-linear's technology purple by solid-state, semiconductor laser
Outer light.However, the ultraviolet light produced in this way mostly multi-mode laser, beam quality is bad, it is impossible to meet industrial fine
The demand of processing.In addition, a large amount of optical elements using own space are needed in system, and it is complicated, debugging difficulty is added, no
Beneficial to industrial mass production.
(patent name is Publication No. CN201937162U Chinese patent application《10W grades of semiconductor diode pump
355nm ultraviolet lasers》), and (patent name is Publication No. CN105633785A Chinese patent application《A kind of locked mode
The light path system of ultraviolet laser》) in, it is to use semiconductor pumped ultraviolet laser, it applies substantial amounts of optical mirror slip
Resonator of different shapes is constituted, the requirement to optical alignment and fixation is higher.Other diode pumped solid state laser light
Light conversion efficiency is low, to obtain high-power ultraviolet light output, need to constitute array using multiple semiconductor lasers, increase system
Complexity and energy consumption.
At present, developing rapidly for optical fiber laser provides more choices for the exploitation of ultraviolet laser, for example, apply
Number for 201110156920.9 Chinese invention patent application, (name of patent application is《The gain switch type psec of adjustable pulse width
Pulse seed source》) optical fiber laser based on MOPA structures is referred to, it is identical to obtain by amplifying high-quality seed light
The high power laser light of pattern, transformation efficiency is high, and output facula quality is good, using seed source generation single mode, the psec of linear polarization
Laser, the characteristics of with high accuracy, high stability, is especially suitable for industrial processes, how by it using in ultraviolet laser field,
It is higher so as to develop performance, it is simpler compact, and it is adapted to the new laser of industrial production application, it is urgently to be resolved hurrily at present
Technical problem.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of third harmonic generation ultraviolet laser,
The laser includes seed source, laser amplifier and the three times frequency module of light connects, it is characterised in that the kind
Component is gain switch psec seed source;The laser amplifier is the casacade multi-amplifier of light connects;The three times frequency module exists
Include condenser lens, two frequency-doubling crystals and its heating furnace, frequency tripling crystal and its heating furnace, ultraviolet light separator in light path successively
And collimater, wherein the condenser lens, two frequency-doubling crystal and its heating furnace, the frequency tripling crystal and its heating furnace are common
Axle is set, and two frequency-doubling crystals are three lithium borates (LBO) crystal of a type-Ⅱphase matching, and frequency tripling crystal is two type-Ⅱphase matchings
Three lithium borates (LBO) crystal.
Further, the two frequency-doubling crystals principal plane is X/Y plane, and crystal angle is θ=90 °,Described three times
Frequency principal plane of crystal is YZ planes, and crystal angle isThe X of the Z axis of two frequency-doubling crystal and the frequency tripling crystal
Direction of principal axis is identical.
Further, the product of the frequency tripling crystal length and deviation angle is the two frequency-doubling crystals length and deviation angle
2 times of product.
Further, the two frequency-doubling crystals front and rear surfaces all plate the anti-reflection film of infrared light and green glow, and the frequency tripling is brilliant
Body front surface plates infrared light and green glow anti-reflection film, and cutting angle is Brewster angle.
Further, the fiber amplifier include set gradually one-level mode pump amplifier, two grades of multimode pumpings
Amplifier, three-level multimode pumped amplifier and level Four multimode pumped amplifier.
Further, the one-level mode pump amplifier mixes ytterbium light for the first polarization-maintaining of unidirectional pumping or two directional pump
It is fine;Two grades of multimode pumped amplifiers are the second polarization-maintaining Yb dosed optical fiber of unidirectional pumping or two directional pump;The three-level is more
Mould pumped amplifier is the 3rd polarization-maintaining Yb dosed optical fiber of unidirectional pumping or two directional pump;The level Four multimode pumped amplifier is
Unidirectional pumping or the 4th polarization-maintaining Yb dosed optical fiber of two directional pump.
Further, the gain switch psec seed source includes gain switch laser, the light set gradually along light path
Fine coupler, single longitudinal mode locking device and chirp compensation module, the output end of the gain switch laser pass through fiber coupling
Device is connected with the single longitudinal mode locking device and the chirp compensation module respectively.
Further, the gain switch laser is by electric pulse generator, signal generator, DC bias supplies and F-
P semiconductor lasers are sequentially connected composition.
Further, the single longitudinal mode locking device is DFB semiconductor laser or fiber grating;The chirp compensation
Module is chirp grating or chirp compensation photon band-gap optical fiber.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with following beneficial effect
Really:Gain switch psec seed source is employed, the seed light repetition rate of generation is adjustable, adjustable pulse width, and be picosecond magnitude, and
And be single mode, linearly polarized light, amplified the feature of Ultra-Violet Laser is consistent with seed light with after frequency tripling, and power is up to 35W, effect
Rate is up to 50%;Whole equipment is all optical fibre structure, simple and compact for structure during the optical fiber align without complexity, is adapted to industry
Production and application.
Brief description of the drawings
Fig. 1 is that the system for the third harmonic generation ultraviolet laser realized according to the present invention constitutes structural representation;
Fig. 2 is that two angle automatching lbo crystals in the ultraviolet laser realized according to the present invention install matching schematic diagram;
(a) it is installation in the same direction, (b) is reverse installation, (c) LBO1 is non-critical phase matching (NCPM) and Temperature Matching, and LBO2 is two types
It is infrared light with wherein solid line, pecked line is green glow, and dotted line is ultraviolet light;
Fig. 3 is according to the ultraviolet light conversion efficiency and infrared light obtained in the laser of the invention realized using distinct methods
The relation of power;
Fig. 4 is to show according to the relation between the repetition in the laser of the invention realized and uv power and conversion efficiency
It is intended to.
In all of the figs, identical reference is used for representing identical element or structure, wherein:1-gain switch
Psec seed source, 2-electric pulse generator, 3-signal amplifier, 4-direct current biasing, 5-dc source, 6-F-P semiconductors
Laser, 7-DFB semiconductor laser, 8-fiber coupler, 9-chirp grating, 10-fiber amplifier, 11-polarization-maintaining every
From device, 12-forward direction wavelength division multiplexer (WDM), 13-forward direction mode pump laser device, the 14-the first polarization-maintaining Yb dosed optical fiber, 15-
Backward wavelength division multiplexer, 16-backward mode pump laser device, 17-polarization-maintaining isolator, 18-forward direction multimode pumping coupler,
19-forward direction multimode pump laser, the 20-the second polarization-maintaining Yb dosed optical fiber, 21-backward multimode pumping coupler, 22-backward many
Mould pumping office device, 23-polarization-maintaining isolator, 24-forward direction multimode pumping coupler, 25-forward direction multimode pump laser,
26-the three polarization-maintaining Yb dosed optical fiber, 27-backward multimode pumping coupler, 28-backward multimode pump laser, 29-polarization-maintaining every
From device, 30-dichroic mirror (reflected signal light transmits pump light), 31-signal coupled lens, the 32-the four polarization-maintaining Yb dosed optical fiber,
33-pump coupling lens, 34-dichroic mirror (reflected signal light transmits pump light), 35-dichroic mirror (reflected pump light, transmission
Flashlight), 36-pumping collimation lens, 37-multimode pump laser, 38-beam expanding lens, 39-polarization-maintaining isolator, 40-three
Times frequency module, 41-ir reflector, 42-condenser lens, 43-two frequency-doubling crystals and heating furnace, 44-frequency tripling crystal and
Heating furnace, 45-ultraviolet light separator, 46-ultraviolet light separator, 47-collimater.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
As shown in figure 1, a kind of third harmonic generation ultraviolet laser of the present invention, including pumping source, fiber amplifier 10 and frequency multiplication
Module 40.
Wherein:Pumping source is that repetition rate is adjustable, adjustable pulse width gain switch psec seed source 1.The gain switch skin
Second seed source 1 includes gain switch laser, fiber coupler 8, single longitudinal mode locking device and the chirp of polarization maintaining optical fibre connection
Compensating module, the output end of gain switch laser by fiber coupler 8 respectively with single longitudinal mode locking device and chirp compensation
Module is connected.The gain switch laser of the present embodiment by electric pulse generator 2, signal amplifier 3, DC bias current source 4,
5 and 1033nm F-P semiconductor lasers 6 are constituted.The dfb semiconductor that single longitudinal mode locking device in the present embodiment is 1033nm
Laser 7, chirp compensation module is chirp grating 9.
During work, electric pulse generator 2 produces the adjustable radiofrequency signal of repetition rate, and repetition rate adjustable range is in 10k
~100MHz, changes direct current biasing 4 by adjusting dc source 5, makes F-P semiconductor lasers 6 below threshold value, then radio frequency is believed
It is carried on F-P semiconductor lasers 6 after number amplifying through signal amplifier 3 and can produce gain.F-P semiconductor lasers 6 are produced
Vibration, before second oscillation peaks occurs, electric pulse gain disappears, the now output of the F-P semiconductor lasers 6 short arteries and veins of picosecond
Punching.1033nm DFB semiconductor laser 7 is used to cause the longitudinal mode that F-P semiconductor lasers 6 are produced all the time in locking shape
State, can arbitrarily adjust the repetition rate of electric pulse generator 2, to adjust the repetition rate of output optical pulse.The pin of chirp grating 9
The chirp distribution for exporting pulse is used for compressing or stretched pulse width, to realize adjustable pulse width, pulse-width regulated scope 50~
500ps.The seed luminous power that gain switch picopulse seed source 1 is produced is general within 1mW.
The level Four, including one-level mode pump source amplifier, the two grades of multimode pumping sources set gradually altogether of fiber amplifier 10
Amplifier, three-level multimode pumping source amplifier and level Four multimode pumping source amplifier.Between seed source and fiber amplifier 10, light
Between the level Four of fiber amplifier 10, respectively by polarization-maintaining isolator 11,17,23,29,39 between fiber amplifier and three times frequency module
Separate.One-level mode pump amplifier is 5/130 μm of the first polarization-maintaining Yb dosed optical fiber 14, using two directional pump mode, its forward direction
Mode pump laser device 13 and backward mode pump laser device 16 are 200mW/976nm specifications;Two grades of multimode pumped amplifiers
For 10/125 μm of the second polarization-maintaining Yb dosed optical fiber 20, using two directional pump mode, its forward direction multimode pump laser 19 and backward
Multimode pump laser 22 is 7W/915nm specifications;Three-level multimode pumped amplifier mixes ytterbium light for 30/250 μm of the 3rd polarization-maintaining
Fibre 26, using two directional pump mode, its forward direction multimode pump laser 25 and backward multimode pump laser 28 are 20W/
975nm specifications;Level Four multimode pumped amplifier is 85/260 μm of the 4th polarization-maintaining Yb dosed optical fiber 32, and the optical fiber is photonic crystal light
Fibre, using backward pump mode, multimode pump laser 37 is 180W/975nm specifications.
The work process of fiber amplifier 10 is:The seed light for the 1033nm that above-mentioned gain switch psec seed source 1 is produced
By polarization-maintaining isolator 11, the laser of its only one of which polarization state is set to enter fiber amplifier 10, it is ensured that the linear polarization of laser
Property.The power produced before the 200mW/976nm of one-level single mode amplifier to mode pump laser device 13 is that 200mW, wavelength are
976nm pump light and 1033nm seed lights to wavelength division multiplexer (WDM) 12 is coupled into the first polarization-maintaining Yb dosed optical fiber 14 by preceding,
Realize and amplify in its fibre core, while the backward mode pump laser device 16 that it is 976nm that power, which is 200mW, wavelength, is by retonation wave
Division multiplexer 15 is coupled into the first polarization-maintaining type Yb dosed optical fiber 14, is amplified seed light.Pass through front and rear two directional pump, seed light
Power can be amplified to 50mW.The unidirectional pump mode that one-level amplification can amplify or amplify backward only with forward direction;One-level is put
Laser after big enters two grades of multimode pumped amplifiers, the 7w/ of two grades of multimode pumped amplifiers by polarization-maintaining isolator 17 again
The pump light that 915nm forward direction multimode pump laser 19 is sent is mixed by preceding to multimode pumping coupler 18 into the second polarization-maintaining
Seed light is amplified in the covering of ytterbium optical fiber 20, while the pumping that 7w/915nm backward multimode pump laser 22 is sent
Light, which is entered by backward multimode pumping coupler 21 in the covering of second polarization-maintaining Yb dosed optical fiber 20, is amplified seed light.Two grades
Amplification continues laser to be amplified to 500mW.Likewise, two grades of amplifications also can be using preceding to amplification and the unidirectional pumping amplified backward
Mode;The laser of two grades of amplifications enter three-level multimode amplifier by polarization-maintaining isolator 23 again, except it uses the of 30/250 μm
Outside three polarization-maintaining Yb dosed optical fibers 26 and 20W/976nm forward direction multimode pump laser 25, backward multimode pump laser 28, work
Principle is identical with two grades of amplifications.Certainly, three-level amplification also can be using preceding to the unidirectional pump mode for amplifying or amplifying backward;Most
Afterwards, the laser of three-level amplification passes through polarization-maintaining isolator 29, and dichroic mirror (reflected signal light, transmit pump light) 30, signal coupling is saturating
Mirror 31 enter the fibre core of the 4th polarization-maintaining Yb dosed optical fiber 32 in, the backward pump light of multimode pump laser 37 through pumping collimation lens 36,
Dichroic mirror (reflected pump light, transmission signal light) 35, dichroic mirror (reflected signal light transmits pump light) 34, pump coupling lens
Flashlight is set to amplify in 33 the 4th polarization-maintaining Yb dosed optical fibers 32 of entrance.After level Four is amplified, the power of laser can amplify
To 70W.
After amplifying through 4 grades, power is 70W, and wavelength is 1033nm, and repetition passes through collimating mirror 38 for 300kHz picosecond laser
Enter three times frequency module 40 with polarization-maintaining isolator 39.Three times frequency module include ir reflector 41, condenser lens 42, two frequencys multiplication
Crystal and heating furnace 43, frequency tripling crystal and heating furnace 44, ultraviolet light separator 45, ultraviolet light separator 46 and collimater 47.
Wherein condenser lens 42, two frequency-doubling crystals and heating furnace 43, frequency tripling crystal and heating furnace 44 is coaxial sets.Its detailed process
For:After lens 42 of a diameter of 2mm 1033nm infrared laser (P polarization light) through focal length 300mm are focused on, in two frequency-doubling crystals
And produce green glow in heating furnace 43;Green glow produces frequency-tripled effect with remaining infrared light in crystal and heating furnace 43 and projects purple
Outer light;Ultraviolet light is extracted by the ultraviolet light separator 46 of two panels, then ultraviolet light collimated using collimater 47, is obtained
High-quality ultraviolet light.
As shown in Fig. 2 (a), two frequency-doubling crystals are a type angle automatching LBO, and outwardly, length is 15mm to Z-direction, θ=
90 °,Front and rear surfaces plate 1033nm+516.5nm anti-reflection film, and the temperature of heating furnace is 50 DEG C.For a type angle
For the lbo crystal for spending matching, infrared light is o light, and green glow is e light, and the process of two frequencys multiplication is o+o → e, due toGreen glow
Deviation angle be more than 0 be 4.1mrad.Frequency tripling crystal is two type angle automatching LBO, and outwardly, length is 15mm to X-direction, θ=
50.8 °,1033nm+516.5nm anti-reflection film is plated on preceding surface, and plated film does not cut for Brewster angle on rear surface, angle
For 32 °, the temperature of heating furnace is 45 DEG C.For the lbo crystal of two type angle automatchings, infrared light, ultraviolet light is o light, green
Light is e light, and the process of frequency tripling is o+e → o, and green glow deviation angle is 9.3mrad.Because ultraviolet light is o light, the later surface of institute is not
Plated film is cut into Brewster angle, and ultraviolet light can be transmitted all.Identical with LBO2 major axes orientations additionally, due to LBO1, LBO1 is
Similar uniaxial negative crystal, LBO2 is similar positive uniaxial crystal, and green glow walk-off effect in two crystal can be mutually compensated for.In order to
Realize that more preferable walk-off effect is compensated, the product of LBO2 length and deviation angle is 2 times of LBO1 length and the product of deviation angle, and
Girdling the waist in the middle of LBO1 and LBO2 after infrared light focusing.Fig. 2 (a) structure can realize extraordinary walk-off effect compensation,
Test as a comparison, compare the ultraviolet light conversion efficiency of three kinds of structures in Fig. 2, as shown in Figure 3.It is obvious that walk-off effect is got over
Good is compensated, and ultraviolet light conversion efficiency is higher.
It is illustrated in figure 4 using gain switch seed source, by level Four fiber amplifier, the ultraviolet light that then frequency tripling is obtained
The curve that power and conversion efficiency change with laser repetition rate.It is obvious that maximal ultraviolet luminous power is 33W in figure, highest turns
It is 50% to change efficiency.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (9)
1. a kind of third harmonic generation ultraviolet laser, the laser includes seed source (1), the laser amplifier (10) and three of light connects
Times frequency module (40), it is characterised in that the seed source (1) is gain switch psec seed source (1);The laser amplifier
(10) it is the casacade multi-amplifier of light connects;The three times frequency module (40) in light path successively include condenser lens (42), two times
Frequency crystal and its heating furnace (43), frequency tripling crystal and its heating furnace (44), ultraviolet light separator (45,46) and collimater
(47), wherein the condenser lens (42), two frequency-doubling crystal and its heating furnace (43), the frequency tripling crystal and its heating
Stove (44) is coaxial to be set, and two frequency-doubling crystals are three lithium borates (LBO) crystal of a type-Ⅱphase matching, and frequency tripling crystal is two class phases
Three lithium borates (LBO) crystal of position matching.
2. third harmonic generation ultraviolet laser as claimed in claim 1, it is characterised in that the two frequency-doubling crystals principal plane is flat for XY
Face, crystal angle is θ=90 °,The frequency tripling principal plane of crystal is YZ planes, and crystal angle isIt is described
The Z axis of two frequency-doubling crystals is identical with the X-direction of the frequency tripling crystal.
3. third harmonic generation ultraviolet laser as claimed in claim 1 or 2, it is characterised in that the frequency tripling crystal length is with walking
The product of digression is 2 times of the two frequency-doubling crystals length and the product of deviation angle.
4. third harmonic generation ultraviolet laser as claimed in claim 3, it is characterised in that the two frequency-doubling crystals front and rear surfaces are all plated
The anti-reflection film of infrared light and green glow, the brilliant body front surface plating infrared light of the frequency tripling and green glow anti-reflection film, cutting angle is Bruce
Special angle.
5. third harmonic generation ultraviolet laser as claimed in claim 4, it is characterised in that the fiber amplifier (10) is included successively
The one-level mode pump amplifier of setting, two grades of multimode pumped amplifiers, three-level multimode pumped amplifier and level Four multimode pumping
Amplifier.
6. third harmonic generation ultraviolet laser as claimed in claim 5, it is characterised in that the one-level mode pump amplifier is single
To pumping or the first polarization-maintaining Yb dosed optical fiber (14) of two directional pump;Two grades of multimode pumped amplifiers be unidirectional pumping or
Second polarization-maintaining Yb dosed optical fiber (20) of two directional pump;The three-level multimode pumped amplifier is unidirectional pumping or two directional pump
3rd polarization-maintaining Yb dosed optical fiber (26);The level Four multimode pumped amplifier is mixed for the 4th polarization-maintaining of unidirectional pumping or two directional pump
Ytterbium optical fiber (32).
7. the third harmonic generation ultraviolet laser as described in any one in claim 1-6, it is characterised in that the gain switch skin
Gain switch laser that second seed source (1) includes setting gradually along light path, fiber coupler (8), single longitudinal mode locking device and
Chirp compensation module, the output end of the gain switch laser is locked with the single longitudinal mode respectively by fiber coupler (8)
Device and chirp compensation module connection.
8. third harmonic generation ultraviolet laser as claimed in claim 7, it is characterised in that the gain switch laser is by electric pulse
Generator (2), signal generator (3), DC bias supplies and F-P semiconductor lasers (6) are sequentially connected composition.
9. third harmonic generation ultraviolet laser according to claim 8, it is characterised in that:The single longitudinal mode locking device is DFB
Semiconductor laser (7) or fiber grating;The chirp compensation module is chirp grating (9) or chirp compensation photon band gap
Optical fiber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710433213.7A CN107086430B (en) | 2017-06-09 | 2017-06-09 | A kind of third harmonic generation ultraviolet laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710433213.7A CN107086430B (en) | 2017-06-09 | 2017-06-09 | A kind of third harmonic generation ultraviolet laser |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107086430A true CN107086430A (en) | 2017-08-22 |
CN107086430B CN107086430B (en) | 2019-05-10 |
Family
ID=59605587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710433213.7A Active CN107086430B (en) | 2017-06-09 | 2017-06-09 | A kind of third harmonic generation ultraviolet laser |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107086430B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108767640A (en) * | 2018-05-25 | 2018-11-06 | 国科世纪激光技术(天津)有限公司 | A kind of novel low ultraviolet solid state laser with high green light |
CN108988107A (en) * | 2018-08-15 | 2018-12-11 | 武汉安扬激光技术有限责任公司 | A kind of femtosecond ultraviolet laser |
CN109830884A (en) * | 2019-03-28 | 2019-05-31 | 上海交通大学 | A kind of modular VUV LASER device |
CN112736631A (en) * | 2021-01-16 | 2021-04-30 | 北京工业大学 | Nanosecond all-fiber ultraviolet laser with line width of tens of megahertz |
CN114374137A (en) * | 2021-12-29 | 2022-04-19 | 武汉安扬激光技术股份有限公司 | Optical fiber ultraviolet femtosecond laser |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325380A (en) * | 1992-07-17 | 1994-06-28 | Trw Inc. | Dual wavelength laser emitter |
WO2001052370A1 (en) * | 2000-01-11 | 2001-07-19 | United States Enrichment Corporation | SOLID-STATE TUNABLE VISIBLE LASER SOURCE USING SUM FREQUENCY MIXING OR FREQUENCY DOUBLING OF A Yb:SILICA FIBER LASER AND AN Nd:YAG LASER |
CN102510001A (en) * | 2011-11-08 | 2012-06-20 | 陈抗抗 | Frequency-doubling green light laser |
EP2376980B1 (en) * | 2008-12-15 | 2012-10-03 | Coherent, Inc. | Frequency-tripled fiber mopa |
CN105576494A (en) * | 2016-01-28 | 2016-05-11 | 广东正业科技股份有限公司 | Ultraviolet laser |
CN205543662U (en) * | 2016-01-28 | 2016-08-31 | 昆山市正业电子有限公司 | Ultraviolet laser |
CN106063056A (en) * | 2014-01-06 | 2016-10-26 | Ipg光子公司 | Ultra-high power single mode green fiber laser operating in continuous wave and quasi-continuous wave regimes |
WO2017012991A1 (en) * | 2015-07-17 | 2017-01-26 | Jenoptik Laser Gmbh | Method for modulating a laser and modulable laser |
-
2017
- 2017-06-09 CN CN201710433213.7A patent/CN107086430B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325380A (en) * | 1992-07-17 | 1994-06-28 | Trw Inc. | Dual wavelength laser emitter |
WO2001052370A1 (en) * | 2000-01-11 | 2001-07-19 | United States Enrichment Corporation | SOLID-STATE TUNABLE VISIBLE LASER SOURCE USING SUM FREQUENCY MIXING OR FREQUENCY DOUBLING OF A Yb:SILICA FIBER LASER AND AN Nd:YAG LASER |
EP2376980B1 (en) * | 2008-12-15 | 2012-10-03 | Coherent, Inc. | Frequency-tripled fiber mopa |
CN102510001A (en) * | 2011-11-08 | 2012-06-20 | 陈抗抗 | Frequency-doubling green light laser |
CN106063056A (en) * | 2014-01-06 | 2016-10-26 | Ipg光子公司 | Ultra-high power single mode green fiber laser operating in continuous wave and quasi-continuous wave regimes |
WO2017012991A1 (en) * | 2015-07-17 | 2017-01-26 | Jenoptik Laser Gmbh | Method for modulating a laser and modulable laser |
CN105576494A (en) * | 2016-01-28 | 2016-05-11 | 广东正业科技股份有限公司 | Ultraviolet laser |
CN205543662U (en) * | 2016-01-28 | 2016-08-31 | 昆山市正业电子有限公司 | Ultraviolet laser |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108767640A (en) * | 2018-05-25 | 2018-11-06 | 国科世纪激光技术(天津)有限公司 | A kind of novel low ultraviolet solid state laser with high green light |
CN108988107A (en) * | 2018-08-15 | 2018-12-11 | 武汉安扬激光技术有限责任公司 | A kind of femtosecond ultraviolet laser |
CN109830884A (en) * | 2019-03-28 | 2019-05-31 | 上海交通大学 | A kind of modular VUV LASER device |
CN112736631A (en) * | 2021-01-16 | 2021-04-30 | 北京工业大学 | Nanosecond all-fiber ultraviolet laser with line width of tens of megahertz |
CN112736631B (en) * | 2021-01-16 | 2024-04-26 | 北京工业大学 | Nanosecond all-fiber ultraviolet laser with line width of tens of megahertz |
CN114374137A (en) * | 2021-12-29 | 2022-04-19 | 武汉安扬激光技术股份有限公司 | Optical fiber ultraviolet femtosecond laser |
CN114374137B (en) * | 2021-12-29 | 2024-03-26 | 武汉安扬激光技术股份有限公司 | Optical fiber ultraviolet femtosecond laser |
Also Published As
Publication number | Publication date |
---|---|
CN107086430B (en) | 2019-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107086430B (en) | A kind of third harmonic generation ultraviolet laser | |
CN102510001B (en) | Frequency-doubling green light laser | |
US7443903B2 (en) | Laser apparatus having multiple synchronous amplifiers tied to one master oscillator | |
US7920606B2 (en) | Frequency-tripled fiber MOPA | |
US7733922B1 (en) | Method and apparatus for fast pulse harmonic fiber laser | |
JP2009535666A (en) | Pulsed UV and visible Raman laser system | |
US8373924B2 (en) | Frequency-tripled fiber MOPA | |
CN103618205A (en) | Full-solid-state single longitudinal mode yellow light laser | |
CN101764348B (en) | Semiconductor pump ultraviolet laser | |
CN102244361A (en) | Self-Raman frequency conversion self-mode locking solid laser | |
CN102088158B (en) | Method and device for obtaining high-power ultraviolet laser light | |
CN103401135B (en) | Adopt raman frequency conversion by the method for laser amplifier and device thereof | |
CN104253375B (en) | A kind of high repetition frequency narrow pulse width single-mode green light laser | |
CN108963736A (en) | A kind of high-peak power picosecond and nanosecond short-wavelength light fibre laser | |
CN101719625B (en) | High repetition frequency narrow pulse width semiconductor pumping green laser | |
US8976821B2 (en) | Anisotropic beam pumping of a Kerr lens modelocked laser | |
CN102610986A (en) | Mode locking fiber laser with built-in saturable absorber body element | |
CN103825188B (en) | The adjustable high power picosecond laser of output frequency | |
CN104600554A (en) | Broadband high-efficiency laser amplification device | |
CN104409957B (en) | A kind of 2 μm of laser devices of narrow linewidth | |
WO2017222022A1 (en) | Fiber laser circuit | |
CN105490139A (en) | High-power all-fiber near and middle infrared super-continuum spectrum laser light source | |
Hofmann et al. | Comparison of yellow light emitting micro integrated laser modules with different geometries of the crystals for second harmonic generation | |
CN202423817U (en) | Mode-locked optical fiber laser with built-in saturation absorber element | |
CN105896255A (en) | Adjustable picosecond solid laser system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 430000 Anyang laser high power ultrafast fiber laser production base project (all for self use), No. 101 fiber building / unit, No. 1-3 floor workshop, No. 6, photoelectric Park Second Road, zuoling street, Donghu New Technology Development Zone, Wuhan, Hubei Province Patentee after: Wuhan Anyang Laser Technology Co.,Ltd. Address before: No.80 Gaoxin No.5 Road, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee before: WUHAN YANGTZE SOTON LASER Co.,Ltd. |
|
CP03 | Change of name, title or address |