CN101719625B - High repetition frequency narrow pulse width semiconductor pumping green laser - Google Patents
High repetition frequency narrow pulse width semiconductor pumping green laser Download PDFInfo
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- CN101719625B CN101719625B CN2009102500190A CN200910250019A CN101719625B CN 101719625 B CN101719625 B CN 101719625B CN 2009102500190 A CN2009102500190 A CN 2009102500190A CN 200910250019 A CN200910250019 A CN 200910250019A CN 101719625 B CN101719625 B CN 101719625B
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Abstract
The invention discloses a high repetition frequency narrow pulse width semiconductor pumping green laser which comprises two groups of pumping coupled focus systems and a cavity resonator, wherein the two groups of pumping coupled focus systems are respectively positioned at both ends of the cavity resonator; and pumping light emitted by the pumping coupled focus systems enters into a laser work crystal in a two-face pumping cavity resonator in the cavity resonator. By adopting the high repetition frequency narrow pulse width semiconductor pumping green laser of the invention, the produced green laser beam has good quality, and the transfer efficiency is high.
Description
Technical field
The present invention is meant the high repetition frequency narrow pulse width semiconductor pumping green laser of a kind of conversion efficiency height, good beam quality especially about a kind of laser.
Background technology
Laser compare with ordinary light source have good directionality, the coherence reaches the high characteristics of brightness well, so laser is widely used in every field such as modern industry, agricultural, medical science, national defence.Because green Wavelength of Laser is less than infrared laser, frequency is greater than infrared laser, therefore, the focal beam spot of green laser is littler than the infrared laser, and the energy of the single photon of green laser is greater than the energy of the single photon of infrared laser, and the heat-affected zone of green laser is little in the time of with other matter interaction, can be observed directly by human eye owing to green laser again, therefore, green laser is widely used in the retrofit and laser demonstration of material, and the development of green laser becomes the focus of laser field.The laser that is used to produce green glow is at present normally placed frequency-doubling crystal in the resonant cavity of laser, produce green glow through after the frequency multiplication.But the resonant cavity that adopts mostly is the straight line die cavity at present, in order to form double-frequency oscillation output, need insert a high anti-second harmonic eyeglass in straight chamber, but insertion element can be brought excess loss in the chamber, and cause the phenomenon of output two bundle green glows easily.Often there are shortcomings such as pulse duration is wide, pulse stretching serious, beam quality is not good in the green laser of green laser generation at present, and lower to the conversion efficiency of frequency multiplication green glow from infrared fundamental frequency light in the prior art, is unfavorable for the application on the industry.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of good beam quality, conversion efficiency height and the resonant cavity high repetition frequency narrow pulse width semiconductor pumping green laser for " U " shape Ping-Ping chamber.
For achieving the above object, the invention provides a kind of high repetition frequency narrow pulse width semiconductor pumping green laser, it includes two groups of pumping coupling focusing systems and a resonant cavity, these two groups of pumping coupling focusing systems lay respectively at the two ends of resonant cavity, and the pump light that pumping coupling focusing system is sent is injected the laser work crystal in the double-end pumping resonant cavity in the resonant cavity.
Pumping coupling focusing system includes pump light source, plano-convex collimating mirror, the catadioptric mirror in plane and plano-convex focus lamp, pump light source is positioned at the focus of plano-convex collimating mirror, the plano-convex collimating mirror is between the catadioptric mirror of pump light source and plane, the minute surface of the catadioptric mirror of the optical axis of plano-convex collimating mirror and plane is 45 ° of angles, the minute surface of the catadioptric mirror of the optical axis of plano-convex focus lamp and plane is 45 ° of angles, and the optical axis of plano-convex collimating mirror is vertical with the optical axis of plano-convex focus lamp.
Resonant cavity is " U " shape or " Ji " shape Ping-Ping chamber, resonant cavity includes the oblique anti-mirror in front end level crossing, rear end level crossing, flat output mirror and plane, front end level crossing and rear end level crossing are respectively the preceding Effect of Back-Cavity Mirror of resonant cavity, front end level crossing and flat output mirror are formed the left arm of resonant cavity, be 45 ° of angles between front end level crossing and the flat output mirror, the oblique anti-mirror in rear end level crossing and plane is formed the right arm of resonant cavity, be 45 ° of angles between the oblique anti-mirror in rear end level crossing and plane, flat output mirror is vertical with the oblique anti-mirror in plane; Be provided with the laser work crystal between the oblique anti-mirror in flat output mirror and plane, be provided with frequency-doubling crystal between the front end level crossing of resonant cavity left arm and the flat output mirror, be provided with Q switching between the oblique anti-mirror in the rear end level crossing of resonant cavity right arm and plane; Flat output mirror is at the laser work crystal and wherein between the plano-convex focus lamp in one group of pumping coupling focusing system, the oblique anti-mirror in plane is between the plano-convex focus lamp of laser work crystal and another group pumping coupling focusing system, and the focus of the plano-convex focus lamp of two groups of pumping coupling focusing systems all is positioned at the center of laser work crystal.
Pump light source is a fiber coupled laser diode, and the optical fiber splice of this fiber coupled laser diode is positioned on the focus of plano-convex collimating mirror.
The laser work crystal is Nd-doped yttrium vanadate crystal, neodymium-doped yttrium-aluminum garnet crystal, neodymium-doped yttrium-fluoride crystalline lithium crystal, neodymium-doped vanadic acid gadolinium crystal, yttrium aluminum garnet crystal with ytterbium doping or erbiumdoped yttrium aluminium garnet crystal.
Frequency-doubling crystal is lithium triborate crystal, six cesium lithium borate crystal or barium metaborate crystal.
Adopt two groups of pumping coupling focusing systems to carry out double-end pumping laser work crystal jointly among the present invention, compare, can obtain more powerful green laser with prior art.The present invention has advantages such as green laser-conversion efficiency height, repetition rate height and pulse duration be narrow, pumping coupling focusing system among the present invention simultaneously can be made module, therefore the present invention can realize the complete machine structure modularization, has effect simply firm, that environmental suitability reaches stable performance by force.
Description of drawings
Fig. 1 is the light channel structure schematic diagram of high repetition frequency narrow pulse width semiconductor pumping green laser of the present invention.
Embodiment
Existing conjunction with figs. and specific embodiment are done following detailed description with regard to the architectural feature of the present invention and the effect that can reach.
High repetition frequency narrow pulse width semiconductor pumping green laser of the present invention is used to produce green glow, it includes two groups of pumping coupling focusing systems 1 and a resonant cavity 2, these two groups of pumping coupling focusing systems 1 lay respectively at the two ends of resonant cavity 2, and the pump light that pumping coupling focusing system 1 is sent is injected the working-laser material in the double-end pumping resonant cavity 2 in the resonant cavity 2.This pumping coupling focusing system 1 includes pump light source 10, plano-convex collimating mirror 11, the catadioptric mirror 12 in plane and plano-convex focus lamp 13, wherein plano-convex collimating mirror 11 is lens with plano-convex focus lamp 13, pump light source 10 is positioned on the focus of plano-convex collimating mirror 11, plano-convex collimating mirror 11 is between the catadioptric mirror 12 of pump light source 10 and plane, the minute surface of the catadioptric mirror 12 in the optical axis of plano-convex collimating mirror 11 and plane is 45 ° of angles, the minute surface of the catadioptric mirror 12 in the optical axis of plano-convex focus lamp 13 and plane also is 45 ° of angles, and the optical axis of plano-convex collimating mirror 11 is vertical with the optical axis of plano-convex focus lamp 13.Pump light source 10 among the present invention is a fiber coupled laser diode, and its optical fiber splice is positioned on the focus of plano-convex collimating mirror 11.
Resonant cavity 2 among the present invention adopts " U " shape or " Ji " shape Ping-Ping chamber, it includes front end level crossing 20, rear end level crossing 21, flat output mirror 22 and the oblique anti-mirror 23 in plane, constitute fabry perot cavity, front end level crossing 20 and rear end level crossing 21 are respectively the preceding Effect of Back-Cavity Mirror of resonant cavity 2, front end level crossing 20 and flat output mirror 22 are formed the left arm of resonant cavitys 2, and be 45 ° of angles between front end level crossing 20 and the flat output mirror 22, the oblique anti-mirror 23 in rear end level crossing 21 and plane is formed the right arm of resonant cavitys 2, and be 45 ° of angles between the oblique anti-mirror 23 in rear end level crossing 21 and plane, the oblique anti-mirror in flat output mirror 22 and plane 23 is vertical.Front end level crossing 20 is the completely reflecting mirror of cavity front and back with rear end level crossing 21, front end level crossing 20 is coated with the rete to fundamental frequency light and second harmonic light total reflection, rear end level crossing 21 is coated with the rete to the fundamental frequency light total reflection, flat output mirror 22 is coated with to the high reflection of fundamental frequency light, to the high transmission of second harmonic light and to the rete of the high transmission of pump light, and the oblique anti-mirror 23 in plane is coated with to the high reflection of fundamental frequency light, to the rete of the high transmission of pump light.Be provided with laser work crystal 24 between the oblique anti-mirror 23 in flat output mirror 22 and plane, be provided with frequency-doubling crystal 25 between the front end level crossing 20 of resonant cavity 2 left arms and the flat output mirror 22, be provided with Q switching 26 between the oblique anti-mirror 23 in the rear end level crossing 21 of resonant cavity 2 right arms and plane.Between the plano-convex focus lamp 13 and laser work crystal 24 of flat output mirror 22 in wherein one group of pumping is coupled focusing system 1, the oblique anti-mirror 23 in plane is between the plano-convex focus lamp 13 and laser work crystal 24 of another group pumping coupling focusing system 1, and the focus of the plano-convex focus lamp 13 of two groups of pumping coupling focusing systems 1 all is positioned at the center of laser work crystal 24.
Because the optical fiber splice of fiber coupled laser diode is positioned on the focus of plano-convex collimating mirror 11, the pump light of dispersing that fiber coupled laser diode sends is collimated through plano-convex collimating mirror 11 backs to be directional light, through the parallel plano-convex focus lamp 13 that enters in catadioptric mirror 12 reflection backs, plane, the pump light of two groups of pumpings coupling focusing systems 1 sees through flat output mirror 22 and the oblique anti-mirror 23 in plane respectively from two surface feeding sputterings of laser work crystal 24 and focus on the center of laser work crystal 24, double-end pumping laser work crystal 24, and the generation wavelength is the infrared fundamental frequency light of 1064nm, transfer Q by Q switching 26, realize the infrared fundamental frequency light generation of 1064nm of high repetition frequency narrow pulse width.By the reflection of flat output mirror 22 with oblique anti-mirror 23 in plane and rear end level crossing 21, fundamental frequency light is for the first time by frequency-doubling crystal 25, effect converts the green laser that wavelength is 532nm to part fundamental frequency light through frequency multiplication, the fundamental frequency light of frequency multiplication does not take place by front end level crossing 20 reflected back frequency-doubling crystals 25 in green laser and residue by frequency-doubling crystal 25, carry out the second harmonic conversion once more, second harmonic light afterwards, be that green laser is all exported through flat output mirror 22, and, proceed stimulated radiation and amplify in the remaining fundamental frequency light reflected back laser work crystal 24 that frequency multiplication do not take place after the round trip frequency multiplication.
Laser work crystal 24 among the present invention adopts the Nd-doped yttrium vanadate (Nd:YVO that pump light is had higher absorption coefficient and bigger stimulated emission cross section
4) crystal, its doping content is less than 0.5at%; Laser work crystal 24 among the present invention can also adopt neodymium-doped yttrium-aluminum garnet (Nd:YAG) crystal, neodymium-doped yttrium-fluoride lithium (Nd:YLF) crystal, neodymium-doped vanadic acid gadolinium (Nd:GdVO
4) crystal, mix ytterbium yttrium-aluminium-garnet (Yb:YAG) crystal or er-doped yttrium-aluminium-garnet (Er:YAG) crystal.Frequency-doubling crystal 25 of the present invention adopts three lithium borates (LBO) crystal of critical phase matched, and working temperature is a room temperature, and its phase matching angle is 90 °, and the azimuth is 11.4 °; Frequency-doubling crystal 25 of the present invention also can adopt six cesium lithium borates (CLBO) or barium metaborate nonlinear crystals such as (BBO).Pump light source 10 of the present invention (being fiber coupled laser diode), laser work crystal 24, Q switching 26 and frequency-doubling crystal 25 all adopt high temperature-controlled precision water-cooling circulating system to freeze, temperature-controlled precision is ± 0.1 ℃, and water circulation system is the totally enclosed type loop.
Owing to adopt two groups of pumping coupling focusing systems to carry out double-end pumping laser work crystal jointly among the present invention, compare with prior art, can obtain more powerful green laser.The present invention has advantages such as conversion efficiency height, repetition rate height and pulse duration be narrow, and the pumping coupling focusing system among the present invention simultaneously can be made module, so complete machine structure of the present invention is simply firm, and environmental suitability is strong, stable performance.Be applicable to the Precision Machining field in the advanced industrial processes.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (4)
1. high repetition frequency narrow pulse width semiconductor pumping green laser, it is characterized in that, it includes two groups of pumping coupling focusing systems and a resonant cavity, described two groups of pumpings coupling focusing system lays respectively at the two ends of described resonant cavity, and the pump light that described pumping coupling focusing system is sent is injected the laser work crystal in the described resonant cavity of double-end pumping in the described resonant cavity;
Described pumping coupling focusing system includes pump light source, plano-convex collimating mirror, the catadioptric mirror in plane and plano-convex focus lamp, described pump light source is positioned at the focus of described plano-convex collimating mirror, described plano-convex collimating mirror is between the catadioptric mirror of described pump light source and described plane, the minute surface of the catadioptric mirror of the optical axis of described plano-convex collimating mirror and described plane is 45 ° of angles, the minute surface of the catadioptric mirror of the optical axis of described plano-convex focus lamp and described plane is 45 ° of angles, and the optical axis of described plano-convex collimating mirror is vertical with the optical axis of described plano-convex focus lamp;
Described resonant cavity is " U " shape or " Ji " shape Ping-Ping chamber, described resonant cavity includes the front end level crossing, the rear end level crossing, the oblique anti-mirror in flat output mirror and plane, described front end level crossing and described rear end level crossing are respectively the preceding Effect of Back-Cavity Mirror of described resonant cavity, described front end level crossing and described flat output mirror are formed the left arm of described resonant cavity, be 45 ° of angles between described front end level crossing and the described flat output mirror, the oblique anti-mirror in described rear end level crossing and described plane is formed the right arm of described resonant cavity, be 45 ° of angles between the oblique anti-mirror in described rear end level crossing and described plane, described flat output mirror is vertical with the oblique anti-mirror in described plane; Be provided with described laser work crystal between the oblique anti-mirror in described flat output mirror and described plane, be provided with frequency-doubling crystal between the front end level crossing of described resonant cavity left arm and the flat output mirror, be provided with Q switching between the oblique anti-mirror in the rear end level crossing of described resonant cavity right arm and plane; Between the plano-convex focus lamp of described flat output mirror in described laser work crystal and described wherein one group of pumping coupling focusing system, the oblique anti-mirror in described plane is between the plano-convex focus lamp of described laser work crystal and described another group pumping coupling focusing system, and the focus of the plano-convex focus lamp of described two groups of pumpings coupling focusing system all is positioned at the center of described laser work crystal; Described front end level crossing is coated with the rete to fundamental frequency light and second harmonic light total reflection, described rear end level crossing is coated with the rete to the fundamental frequency light total reflection, described flat output mirror is coated with to the high reflection of fundamental frequency light, to the high transmission of second harmonic light and to the rete of the high transmission of pump light, and the oblique anti-mirror in described plane is coated with to the high reflection of fundamental frequency light, to the rete of the high transmission of pump light.
2. high repetition frequency narrow pulse width semiconductor pumping green laser as claimed in claim 1, it is characterized in that, described pump light source is a fiber coupled laser diode, and the optical fiber splice of this fiber coupled laser diode is positioned on the focus of described plano-convex collimating mirror.
3. high repetition frequency narrow pulse width semiconductor pumping green laser as claimed in claim 1, it is characterized in that described laser work crystal is Nd-doped yttrium vanadate crystal, neodymium-doped yttrium-aluminum garnet crystal, neodymium-doped yttrium-fluoride crystalline lithium, neodymium-doped vanadic acid gadolinium crystal, yttrium aluminum garnet crystal with ytterbium doping or erbiumdoped yttrium aluminium garnet crystal.
4. high repetition frequency narrow pulse width semiconductor pumping green laser as claimed in claim 1 is characterized in that, described frequency-doubling crystal is lithium triborate crystal, six cesium lithium borate crystal or barium metaborate crystal.
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| CN103050881B (en) * | 2012-09-25 | 2015-08-26 | 武汉立德激光有限公司 | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency |
| CN102842842B (en) * | 2012-09-25 | 2014-06-04 | 哈尔滨工业大学 | High-power narrow-linewidth 1.94mum Tm: YLF (Yttrium Lithium Fluoride) laser |
| CN104201554A (en) * | 2014-09-16 | 2014-12-10 | 哈尔滨工业大学 | 1.6 micron active-switching Q pulse laser device based on Er : YAG ceramic material |
| CN105720476B (en) * | 2016-04-18 | 2018-11-06 | 长春理工大学 | The peak value narrow pulse laser to be jumped based on laser gain |
| CN106025777B (en) * | 2016-08-01 | 2019-02-05 | 苏州艾思兰光电有限公司 | A kind of laser light path system of semiconductor pumped laser cleaning machine |
| CN117277038A (en) * | 2023-11-21 | 2023-12-22 | 武汉光谷航天三江激光产业技术研究院有限公司 | Single-end pumping airborne pulse laser based on double-crystal serial connection and control method |
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Address after: Room a1002, 10 / F, building a, building 3, Longgang Tian'an Digital Innovation Park, intersection of Qinglin West Road and Huangge North Road, Longcheng street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Huagong new energy equipment Co.,Ltd. Address before: No. 1002, floor 10, block a, building 3, Tian'an Digital City, Longgang central city, Longgang District, Shenzhen Patentee before: SHENZHEN HUAGONG LASER EQUIPMENT Co.,Ltd. |