CN103050881B - The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency - Google Patents
The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency Download PDFInfo
- Publication number
- CN103050881B CN103050881B CN201210359204.5A CN201210359204A CN103050881B CN 103050881 B CN103050881 B CN 103050881B CN 201210359204 A CN201210359204 A CN 201210359204A CN 103050881 B CN103050881 B CN 103050881B
- Authority
- CN
- China
- Prior art keywords
- laser
- yag
- pump light
- crystal
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Lasers (AREA)
Abstract
The invention discloses a kind of YAG green laser of semiconductor double-end pumping of high pulse peak power high repetition frequency, it comprises YAG rod laser work crystal, described YAG rod laser work crystal both sides are coaxially respectively arranged with two pump light sources, for two pump light sources being focused on respectively be arranged along a straight line two groups of optical coupling systems at YAG rod laser work germ nucleus place, the resonant cavity of YAG rod laser work crystal; For the cooling system of laser cooling.Compact conformation of the present invention, meets the wide environmental temperature steady operation ambient temperature 2 °-33 °, and under high repetition frequency (5kHz), single pulse energy obtains narrower pulsewidth simultaneously, larger peak power.
Description
Technical field
The invention belongs to photoelectron technology, be specifically related to a kind of YAG green laser.
Background technology
Using semiconductor laser as in the pump mode of pumping source, the advantages such as it is high that end pumping mode has coupling efficiency, and quality for outputting laser beam is good.For the body laser inner carving mark of some sector application as transparent material, although use the Output of laser power of laser crystal YVO4 large, can only work at more than 10kHz, not be suitable for the situation of high pulse peak power.For the selection of the type of cooling, when adopting single water-cooling pattern, have two shortcomings: when environment of plant temperature is more than 30 °, optical component condensation (optimum temperature of laser diode is 25 °) in laser, equipment can not work; Diode (led) module, YAG rod, Q drive different with the optimum working temperature of frequency-doubling crystal LBO, and laser beam quality has no idea to be adjusted to the best.When adopting the single TEC type of cooling, when environment of plant temperature is lower than 5 °, because heat radiation cannot make laser diode temperature rise to 25 ° (optimum temperature of laser diode is 25 °) too soon, laser not bright dipping; When environment of plant temperature is more than 30 °, only cannot dispel the heat by fan laser, equipment can not work.Existing various laser can not meet ambient temperature range change greatly, requires that generation high pulse peak value, power are high, repetition rate is in the application requirement of below 5kHz (containing 5kHz).
Summary of the invention
The YAG green laser of the semiconductor double-end pumping of the high pulse peak power high repetition frequency worked under the object of the present invention is to provide a kind of wide environmental temperature, to solve the problem.
Technical scheme of the present invention is: the YAG green laser of the semiconductor double-end pumping of the high pulse peak power high repetition frequency worked under wide environmental temperature, it comprises YAG rod laser work crystal, described YAG rod laser work crystal both sides are coaxially respectively arranged with two pump light sources, for two pump light sources being focused on respectively be arranged along a straight line two groups of optical coupling systems at YAG rod laser work germ nucleus place, the "T"-shaped average resonant cavity of YAG rod laser work crystal, for the cooling system of laser cooling, described cooling system comprises independently the first cooling device be arranged under each heater members, with YAG green laser second cooling device.
Technical solution of the present invention adopts two cover cooling devices, ensures that laser normally works under ambient temperature 2 °-33 °; Meet the job requirement under wide environmental temperature.
Optical coupling system optical coupling system comprises the first optical coupling system be made up of the first divergent mirror set gradually perpendicular to the first pump light source optical axis side, the first focus lamp; The second optical coupling system is formed by the second divergent mirror set gradually perpendicular to the second pump light source optical axis side, the second focus lamp."T"-shaped average resonant cavity; Pump coupling focusing system adopts direct-coupling, and the focus of the light that two groups of pump coupling focusing systems are sent is all in the center of laser work crystal YAG.
"T"-shaped average resonant cavity comprises the first total reflection lens that vertical first pump light source optical axis is positioned at YAG rod laser work crystal side, YAG rod laser work crystal opposite side and the second pump light source optical axis are 45 ° of second total reflection lens arranged, and are parallel to the outgoing mirror of pump light source.The "T"-shaped average cavity resonator structure that the present invention adopts is simple, and occupy little space, the chamber can shortening resonant cavity is to greatest extent long, the pulsewidth of compression laser beam.
It also comprises frequency doubling system.
Described frequency doubling system comprises the acoustooptic Q-switching being arranged at outgoing mirror front end, the frequency-doubling crystal of outgoing mirror rear end, and frequency-doubling crystal rear end arranges filter, adopts filter with filtering.The laser of unwanted wavelength
Described frequency doubling system comprises the acoustooptic Q-switching, intermediate mirror (flat mirror), the frequency-doubling crystal that are arranged at outgoing mirror front end and set gradually.
Described first heat-exchanging cooling device is TEC cooling piece; Second cooling device is water-cooling circulating device.
Apparatus of the present invention compact conformation, meet the wide environmental temperature steady operation ambient temperature 2 °-33 °, under high repetition frequency (5kHz), single pulse energy obtains narrower pulsewidth simultaneously, larger peak power, can produce the laser beam of high pulse peak power high repetition frequency of 5ns ~ 10ns, 5kHz, 5W ~ 10W.
Accompanying drawing explanation
Fig. 1 YAG intracavity frequency doubling laser of the present invention light path schematic diagram.
Fig. 2 YAG cavity external frequency multiplication of the present invention laser schematic diagram.
Fig. 3 cooling structure schematic diagram I of the present invention.
Fig. 4 cooling structure schematic diagram II of the present invention.
Embodiment
The light path installation warrants frequency multiplication of laser of the present invention has two kinds of forms, and one is YAG intracavity frequency doubling, and another kind is YAG cavity external frequency multiplication.
Embodiment 1: as shown in Figure 1, YAG intracavity frequency doubling laser comprises YAG rod laser work crystal 1-6, and YAG rod laser work crystal 1-6 both sides respectively coaxial (optical axis) arrange diode pumping light source 1-1,1-2; The optical coupling system of pipe pump light source 1-1 side, pole comprises the first optical coupling system be made up of the first divergent mirror 1-3 set gradually perpendicular to the first pump light source optical axis side, the first focus lamp 1-12;
The optical coupling system of pipe pump light source 1-2 side, pole comprises the second divergent mirror 1-4, the second focus lamp 1-13 that set gradually perpendicular to the second pump light source optical axis side and forms the second optical coupling system.Adopt direct-coupling structure simple.
The "T"-shaped average resonant cavity of YAG rod laser work crystal 1-6 comprises the first total reflection lens 1-5 perpendicular to pole pipe pump light source 1-1 optical axis after pipe pump light source 1-1 side, pole is positioned at the first focus lamp 1-12; After pipe pump light source 1-2 side, pole is positioned at the second focus lamp 1-13, be 45 ° of second total reflection lens 1-7 arranged with pole pipe pump light source 1-2 optical axis.Total reflection lens 1-5 is the total reflection lens plating the anti-reflection 1064nm of 808nm.Total reflection lens 1-7 is the total reflection lens plating the anti-reflection 1064nm of 808nm.
Second total reflection lens 1-7 output optical axis establishes outgoing mirror 1-9, and outgoing mirror 1-9 is parallel to the optical axis of diode pumping light source 1-1,1-2.The "T"-shaped average fold resonator of above-mentioned formation.
Acoustooptic Q-switching 1-8 was established before outgoing mirror 1-9; After frequency-doubling crystal 1-10 and filter 1-11 is set in turn in outgoing mirror 1-9.
The laser that YAG rod coaxial diode pumping light source 1-1,1-2 in laser work crystal 1-6 both sides sends is respectively through after optical coupling system, focus is all in the center of laser work crystal YAG, the initial light of 1064nm is produced through "T"-shaped average resonant cavity, by acoustooptic Q-switching 1-8, produce 1064nm dynamic Q laser; By frequency-doubling crystal 1-10, produce 532nm dynamic Q laser and part 1064nm laser; By filter 1-11, filter out 1064nm laser, export 532nm dynamic Q laser.Result of the test shows, when 30A electric current, can produce the laser beam of the high pulse peak power high repetition frequency of 5ns, 5kHz, 5W.
Embodiment 2: as shown in Figure 2, YAG intracavity frequency doubling laser comprises YAG rod laser work crystal 2-6, and YAG rod laser work crystal 2-6 both sides respectively coaxial (optical axis) arrange diode pumping light source 2-1,2-2; The optical coupling system of pipe pump light source 2-1 side, pole comprises the first optical coupling system be made up of the first divergent mirror 2-3 set gradually perpendicular to the first pump light source optical axis side, the first focus lamp 2-12;
The optical coupling system of pipe pump light source 2-2 side, pole comprises the second divergent mirror 2-4, the second focus lamp 2-13 that set gradually perpendicular to the second pump light source optical axis side and forms the second optical coupling system.Adopt direct-coupling structure simple.
The "T"-shaped average resonant cavity of YAG rod laser work crystal 2-6 comprises the first total reflection lens 2-5 perpendicular to pole pipe pump light source 2-1 optical axis after pipe pump light source 2-1 side, pole is positioned at the first focus lamp 2-12; After pipe pump light source 2-2 side, pole is positioned at the second focus lamp 2-13, be 45 ° of second total reflection lens 2-7 arranged with pole pipe pump light source 2-2 optical axis.Total reflection lens 2-5 is the total reflection lens plating the anti-reflection 1064nm of 808nm.Total reflection lens 2-7 is the total reflection lens plating the anti-reflection 1064nm of 808nm.
Second total reflection lens 2-7 output optical axis establishes outgoing mirror 2-11, and outgoing mirror 2-11 is parallel to the optical axis of diode pumping light source 2-1,2-2.The "T"-shaped average fold resonator of above-mentioned formation.Set gradually the flat mirror of acoustooptic Q-switching 2-8, intermediate mirror 2-9(before outgoing mirror 2-11), frequency-doubling crystal 2-10.
The laser that YAG rod coaxial diode pumping light source 2-1,2-2 in laser work crystal 2-6 both sides sends is respectively through after optical coupling system, focus is all in the center of laser work crystal YAG, the initial light of 1064nm is produced through "T"-shaped average resonant cavity, through acoustooptic Q-switching 2-8, produce 1064nm dynamic Q laser; By intermediate mirror 2-9 and frequency-doubling crystal 2-10, produce 532nm dynamic Q laser.Result of the test shows, when 30A electric current, can produce the laser beam of the high pulse peak power high repetition frequency of 10ns, 5kHz, 8W.
Laser of the present invention has two cover cooling systems, is described with YAG intracavity frequency doubling laser:
As shown in Figure 3, diode pumping light source 1-1,1-2 are coaxially arranged in housing 10, YAG rod laser work crystal 1-6 is arranged in the middle part of housing 10, and the both sides of YAG rod laser work crystal 1-6 arrange optical coupling system and "T"-shaped average fold resonator with foregoing description; As shown in Figure 4 acoustooptic Q-switching 1-8 and frequency-doubling crystal 1-10 is set with foregoing description.
Be attached at housing 10 and arrange water cooling torus 3-1, water cooling torus 3-1 is connected with refrigeration machine.Diode pumping light source 1-1,1-2 is comprised at the heating element of laser; YAG rod laser work crystal 1-6, the devices such as acoustooptic Q-switching 1-8 and frequency-doubling crystal 1-10 are directly fitted separately and are arranged TEC cooling piece 3-3.Two cover refrigerating systems ensure that laser cavity 3-2 can be stabilized in the scope of 15 ° ~ 28 ° within the scope of ambient temperature 2 ° ~ 33 °, ensures that each device can adjust to separately respective optimum temperature on the other hand on the one hand; When high temperature, because laser chamber temperature has been stabilized in the scope of 15 ° ~ 28 °, in laser cavity there is not the too large temperature difference and occur the situation of condensation in optical component.So just can ensure laser can within the scope of ambient temperature 2 ° ~ 33 ° steady operation.
Claims (2)
1. the YAG green laser of the semiconductor double-end pumping of one kind high pulse peak power high repetition frequency, it comprises YAG rod laser work crystal, it is characterized in that YAG rod laser work crystal both sides are coaxially respectively arranged with two pump light sources, for two pump light sources being focused on respectively be arranged along a straight line two groups of optical coupling systems at YAG rod laser work germ nucleus place, the "T"-shaped average resonant cavity of YAG rod laser work crystal, for the cooling system of laser cooling; Optical coupling system comprise set gradually perpendicular to the first pump light source optical axis side the first divergent mirror, first focus lamp composition the first optical coupling system; The second divergent mirror set gradually perpendicular to the second pump light source optical axis side, the second focus lamp form the second optical coupling system; "T"-shaped average resonant cavity comprises the first total reflection lens that vertical first pump light source optical axis is positioned at YAG rod laser work crystal side, YAG rod laser work crystal opposite side and the second pump light source optical axis are 45 ° of second total reflection lens arranged, and are parallel to the outgoing mirror of pump light source; It also comprises frequency doubling system; Described cooling system comprises independently the first cooling device be arranged under each heater members; With YAG green laser second cooling device; Described frequency doubling system comprises the acoustooptic Q-switching being arranged at outgoing mirror front end, the frequency-doubling crystal of outgoing mirror rear end, frequency-doubling crystal rear end arranges filter or described frequency doubling system comprises the acoustooptic Q-switching, intermediate mirror, the frequency-doubling crystal that are arranged at outgoing mirror front end and set gradually.
2. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 1, is characterized in that described first heat-exchanging cooling device is TEC cooling piece; Second cooling device is water-cooling circulating device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210359204.5A CN103050881B (en) | 2012-09-25 | 2012-09-25 | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210359204.5A CN103050881B (en) | 2012-09-25 | 2012-09-25 | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103050881A CN103050881A (en) | 2013-04-17 |
CN103050881B true CN103050881B (en) | 2015-08-26 |
Family
ID=48063433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210359204.5A Expired - Fee Related CN103050881B (en) | 2012-09-25 | 2012-09-25 | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103050881B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105720476B (en) * | 2016-04-18 | 2018-11-06 | 长春理工大学 | The peak value narrow pulse laser to be jumped based on laser gain |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101055398A (en) * | 2006-04-13 | 2007-10-17 | 深圳市大族激光科技股份有限公司 | End surface pumped continuous red light laser |
CN101308992A (en) * | 2008-06-30 | 2008-11-19 | 山东大学 | Folding cavity self-raman frequency doubling completely solid yellow laser |
CN101465513A (en) * | 2009-01-09 | 2009-06-24 | 哈尔滨工程大学 | Bistable Tm,Ho:YLE laser with bistable zone and adjustable width - |
CN101719625A (en) * | 2009-12-01 | 2010-06-02 | 武汉华工激光工程有限责任公司 | High repetition frequency narrow pulse width semiconductor pumping green laser |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0548180A (en) * | 1991-08-20 | 1993-02-26 | Japan Radio Co Ltd | Solid state laser excited by semiconductor laser |
JP2008021879A (en) * | 2006-07-13 | 2008-01-31 | Japan Science & Technology Agency | End surface excitation fine-rod laser gain module |
-
2012
- 2012-09-25 CN CN201210359204.5A patent/CN103050881B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101055398A (en) * | 2006-04-13 | 2007-10-17 | 深圳市大族激光科技股份有限公司 | End surface pumped continuous red light laser |
CN101308992A (en) * | 2008-06-30 | 2008-11-19 | 山东大学 | Folding cavity self-raman frequency doubling completely solid yellow laser |
CN101465513A (en) * | 2009-01-09 | 2009-06-24 | 哈尔滨工程大学 | Bistable Tm,Ho:YLE laser with bistable zone and adjustable width - |
CN101719625A (en) * | 2009-12-01 | 2010-06-02 | 武汉华工激光工程有限责任公司 | High repetition frequency narrow pulse width semiconductor pumping green laser |
Non-Patent Citations (1)
Title |
---|
高功率端面泵浦腔内倍频瓦级绿光激光器;赵致民等;《激光技术》;20030831;第27卷(第4期);第332页、附图1 * |
Also Published As
Publication number | Publication date |
---|---|
CN103050881A (en) | 2013-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN202695968U (en) | Passive Q-switched laser based on bonded crystal | |
CN204760744U (en) | Device that continuous light and pulse light switch over mutually | |
CN102570262B (en) | Hollow ring-shaped light beam output solid laser and using method therefor | |
CN102280812A (en) | Side-pumped high-power laser device | |
CN102005694B (en) | Single-end pumped intra-cavity frequency doubled ultraviolet solid laser | |
CN101814692A (en) | Medicinal all-solid-state yellow laser | |
CN103427322A (en) | Laser diode pumping multicrystal Q-switched laser | |
CN104253375B (en) | A kind of high repetition frequency narrow pulse width single-mode green light laser | |
CN203536720U (en) | 532 nm green laser | |
CN104538823A (en) | 1617-nm passive Q-switched laser of in-band pumping Er:YAG crystals | |
CN208368938U (en) | A kind of Q-switched laser of semiconductor laser pumping | |
CN202695966U (en) | Double-end-pumped intracavity sum-frequency 355nm-wavelength ultraviolet solid-state laser | |
CN103050881B (en) | The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency | |
CN102510002A (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
CN104409957B (en) | A kind of 2 μm of laser devices of narrow linewidth | |
CN208782229U (en) | Bicrystal infrared laser | |
CN204741165U (en) | Semiconductor laser pumping doubled single frequency laser | |
CN103944053A (en) | Full-solid-state single-spectral-line narrow linewidth yellow light laser | |
CN202405611U (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
CN103022870A (en) | Slat structure based high-power 355nm ultraviolet laser device | |
CN202333428U (en) | Portable pump laser | |
CN204118463U (en) | A kind of wavelength of 1064nm and the 532nm based on rectilinear translation freely switches output laser | |
CN104319618A (en) | 355 nm ultraviolet solid laser | |
CN208835441U (en) | A kind of optical fiber laser of more oscillator structures | |
CN204216400U (en) | A kind of 355nm ultraviolet solid-state laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150826 Termination date: 20170925 |
|
CF01 | Termination of patent right due to non-payment of annual fee |