CN103050881A - YAG (Yttrium Aluminum Garnet) green laser for semiconductor double-end-face pump with high monopulse peak power and high repetition frequency - Google Patents

YAG (Yttrium Aluminum Garnet) green laser for semiconductor double-end-face pump with high monopulse peak power and high repetition frequency Download PDF

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Publication number
CN103050881A
CN103050881A CN2012103592045A CN201210359204A CN103050881A CN 103050881 A CN103050881 A CN 103050881A CN 2012103592045 A CN2012103592045 A CN 2012103592045A CN 201210359204 A CN201210359204 A CN 201210359204A CN 103050881 A CN103050881 A CN 103050881A
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yag
laser
peak power
repetition frequency
green laser
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CN103050881B (en
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柯西军
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Wuhan Lead Laser Co Ltd
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Wuhan Lead Laser Co Ltd
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Abstract

The invention discloses a YAG (Yttrium Aluminum Garnet) green laser for a semiconductor double-end-face pump with high monopulse peak power and high repetition frequency. The YAG green laser comprises a YAG rod laser working crystal, two sets of optical coupling systems, a resonant cavity of the YAG rod laser working crystal and a cooling system, wherein two pump light sources are respectively and coaxially arranged on the two sides of the YAG rod laser working crystal; the two sets of optical coupling systems are arranged along a straight line and are used for respectively focusing the two pump light sources at the center of the YAG rod laser working crystal; and the cooling system is used for cooling the laser. The YAG green laser has a compact structure and can stably work at wide environmental temperature at 2-33 DEG C. Meanwhile, under high repetition frequency (5kHz), the monopulse can obtain wider pulse width and higher peak power.

Description

The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency
Technical field
The invention belongs to photoelectron technology, be specifically related to a kind of YAG green laser.
Background technology
The advantages such as in the pump mode of semiconductor laser as pumping source, the end pumping mode has the coupling efficiency height, and quality for outputting laser beam is good.For the body laser inner carving mark of some sector application such as transparent material, although use the Output of laser power of laser crystal YVO4 large, can only more than 10kHz, work, be not suitable for the situation of high pulse peak power.For selection of cooling way, when adopting single water-cooling pattern, two shortcomings are arranged: when environment of plant temperature surpasses 30 °, the optical component dewfall (optimum temperature of laser diode is 25 °) in the laser, equipment can not be worked; Diode (led) module, YAG rod, Q drive different with the optimum working temperature of frequency-doubling crystal LBO, and laser beam quality has no idea to be adjusted to the best.When adopting the single TEC type of cooling, when environment of plant temperature is lower than 5 °, because heat radiation can't make laser diode temperature rise to 25 ° (optimum temperature of laser diode is 25 °), not bright dipping of laser too soon; When environment of plant temperature surpasses 30 °, only depend on the fan laser to dispel the heat, equipment can not be worked.Existing various lasers can not satisfy ambient temperature range to be changed greatly, the application requirements that requires the high pulse peak value of generation, power height, repetition rate (to contain 5kHz) below 5kHz.
Summary of the invention
The object of the present invention is to provide the YAG green laser of the semiconductor double-end pumping of the high pulse peak power high repetition frequency of working under a kind of wide environmental temperature, to address the above problem.
Technical scheme of the present invention is: the YAG green laser of the semiconductor double-end pumping of the high pulse peak power high repetition frequency of working under the wide environmental temperature, it comprises YAG rod laser work crystal, described YAG rod laser work crystal both sides are coaxial to be respectively arranged with two pump light sources, be used for two pump light sources are focused on respectively two groups of optical coupling systems that are arranged along a straight line at place, YAG rod laser work germ nucleus, the "T"-shaped average resonant cavity of YAG rod laser work crystal, be used for the cooling system of laser cooling, described cooling system comprises independently the first cooling device that is arranged under each heater members; With YAG green laser the second cooling device.
Technical solution of the present invention adopts two cover cooling devices, guarantees that laser is in 2 °-33 ° lower normal operations of ambient temperature; Satisfy the job requirement under the wide environmental temperature.
The optical coupling system optical coupling system comprises by the first divergent mirror that sets gradually perpendicular to the first pump light source optical axis side, the first optical coupling system that the first focus lamp forms; Form the second optical coupling system by the second divergent mirror, the second focus lamp that set gradually perpendicular to the second pump light source optical axis side."T"-shaped average resonant cavity; Pumping coupling focusing system adopts direct-coupling, so that the focus of the light that two groups of pumping coupling focusing systems are sent is all in the center of laser work crystal YAG.
"T"-shaped average resonant cavity comprises that vertical the first pump light source optical axis is positioned at the first total reflection lens of YAG rod laser work crystal one side, YAG rod laser work crystal opposite side and the second pump light source optical axis are the second total reflection lens of 45 ° of settings, and the outgoing mirror that is parallel to pump light source.The "T"-shaped average cavity resonator structure that the present invention adopts is simple, occupies little space, and the chamber that can shorten to greatest extent resonant cavity is long, the pulsewidth of compression laser beam.
It also comprises frequency doubling system.
Described frequency doubling system comprises the acoustooptic Q-switching that is arranged at the outgoing mirror front end, the frequency-doubling crystal of outgoing mirror rear end, and the frequency-doubling crystal rear end arranges filter, adopts filter with filtering.The laser of unwanted wavelength
Described frequency doubling system comprises acoustooptic Q-switching, intermediate mirror (flat mirror), the frequency-doubling crystal that is arranged at the outgoing mirror front end and sets gradually.
Described the first heat-exchanging cooling device is the TEC cooling piece; The second cooling device is water-cooling circulating device.
Apparatus of the present invention compact conformation, satisfy the wide environmental temperature steady operation 2 °-33 ° of ambient temperatures, obtain narrower pulsewidth at the lower single pulse energy of high repetition frequency (5kHz) simultaneously, larger peak power can produce the laser beam of the high pulse peak power high repetition frequency of 5ns ~ 10ns, 5kHz, 5W ~ 10W.
Description of drawings
Fig. 1 YAG intracavity frequency doubling laser of the present invention light path schematic diagram.
Fig. 2 YAG cavity external frequency multiplication of the present invention laser schematic diagram.
Fig. 3 cooling structure schematic diagram of the present invention I.
Fig. 4 cooling structure schematic diagram of the present invention II.
Embodiment
The light path of laser of the present invention arranges according to frequency multiplication two kinds of forms, and a kind of is the YAG intracavity frequency doubling, and another kind is the YAG cavity external frequency multiplication.
Embodiment 1: as shown in Figure 1, the YAG intracavity frequency doubling laser comprises YAG rod laser work crystal 1-6, and YAG rod laser work crystal 1-6 both sides respectively coaxial (optical axis) arrange diode pumping light source 1-1,1-2; The optical coupling system of utmost point pipe pump light source 1-1 side comprises the first optical coupling system that is comprised of the first divergent mirror 1-3 that sets gradually perpendicular to the first pump light source optical axis side, the first focus lamp 1-12;
The optical coupling system of utmost point pipe pump light source 1-2 side comprises that the second divergent mirror 1-4, the second focus lamp 1-13 that set gradually perpendicular to the second pump light source optical axis side form the second optical coupling system.Adopt the direct-coupling structure simple.
The "T"-shaped average resonant cavity of YAG rod laser work crystal 1-6 comprises that utmost point pipe pump light source 1-1 side is positioned at the first focus lamp 1-12 the first total reflection lens 1-5 perpendicular to utmost point pipe pump light source 1-1 optical axis afterwards; Utmost point pipe pump light source 1-2 side is positioned at after the second focus lamp 1-13, is the second total reflection lens 1-7 of 45 ° of settings with utmost point pipe pump light source 1-2 optical axis.Total reflection lens 1-5 is the total reflection lens of the anti-reflection 1064nm of plating 808nm.Total reflection lens 1-7 is the total reflection lens of the anti-reflection 1064nm of plating 808nm.
Establish outgoing mirror 1-9 at the second total reflection lens 1-7 output optical axis, outgoing mirror 1-9 is parallel to the optical axis of diode pumping light source 1-1,1-2.The "T"-shaped average fold resonator of above-mentioned formation.
Before outgoing mirror 1-9, establish acoustooptic Q-switching 1-8; After frequency-doubling crystal 1-10 and filter 1-11 are set in turn in outgoing mirror 1-9.
After the coaxial diode pumping light source 1-1 in YAG rod laser work crystal 1-6 both sides, the laser that 1-2 sends pass through optical coupling system respectively, focus is all in the center of laser work crystal YAG, produce the 1064nm initial light through "T"-shaped average resonant cavity, by acoustooptic Q-switching 1-8, produce 1064nm dynamic Q laser; By frequency-doubling crystal 1-10, produce 532nm dynamic Q laser and part 1064nm laser; By filter 1-11, filter out 1064nm laser, output 532nm dynamic Q laser.Result of the test shows, in the situation of 30A electric current, can produce the laser beam of the high pulse peak power high repetition frequency of 5ns, 5kHz, 5W.
Embodiment 2: as shown in Figure 2, the YAG intracavity frequency doubling laser comprises YAG rod laser work crystal 2-6, and YAG rod laser work crystal 2-6 both sides respectively coaxial (optical axis) arrange diode pumping light source 2-1,2-2; The optical coupling system of utmost point pipe pump light source 2-1 side comprises the first optical coupling system that is comprised of the first divergent mirror 2-3 that sets gradually perpendicular to the first pump light source optical axis side, the first focus lamp 2-12;
The optical coupling system of utmost point pipe pump light source 2-2 side comprises that the second divergent mirror 2-4, the second focus lamp 2-13 that set gradually perpendicular to the second pump light source optical axis side form the second optical coupling system.Adopt the direct-coupling structure simple.
The "T"-shaped average resonant cavity of YAG rod laser work crystal 2-6 comprises that utmost point pipe pump light source 2-1 side is positioned at the first focus lamp 2-12 the first total reflection lens 2-5 perpendicular to utmost point pipe pump light source 2-1 optical axis afterwards; Utmost point pipe pump light source 2-2 side is positioned at after the second focus lamp 2-13, is the second total reflection lens 2-7 of 45 ° of settings with utmost point pipe pump light source 2-2 optical axis.Total reflection lens 2-5 is the total reflection lens of the anti-reflection 1064nm of plating 808nm.Total reflection lens 2-7 is the total reflection lens of the anti-reflection 1064nm of plating 808nm.
Establish outgoing mirror 2-11 at the second total reflection lens 2-7 output optical axis, outgoing mirror 2-11 is parallel to the optical axis of diode pumping light source 2-1,2-2.The "T"-shaped average fold resonator of above-mentioned formation.Set gradually the flat mirror of acoustooptic Q-switching 2-8, intermediate mirror 2-9(before the outgoing mirror 2-11), frequency-doubling crystal 2-10.
After the coaxial diode pumping light source 2-1 in YAG rod laser work crystal 2-6 both sides, the laser that 2-2 sends pass through optical coupling system respectively, focus is all in the center of laser work crystal YAG, produce the 1064nm initial light through "T"-shaped average resonant cavity, through acoustooptic Q-switching 2-8, produce 1064nm dynamic Q laser; By intermediate mirror 2-9 and frequency-doubling crystal 2-10, produce 532nm dynamic Q laser.Result of the test shows, in the situation of 30A electric current, can produce the laser beam of the high pulse peak power high repetition frequency of 10ns, 5kHz, 8W.
Laser of the present invention has two cover cooling systems, is described with the YAG intracavity frequency doubling laser:
As shown in Figure 3, diode pumping light source 1-1,1-2 are coaxial to be arranged in the housing 10, YAG rod laser work crystal 1-6 is arranged at housing 10 middle parts, and the both sides of YAG rod laser work crystal 1-6 arrange optical coupling system and "T"-shaped average fold resonator with foregoing description; With foregoing description acoustooptic Q-switching 1-8 and frequency-doubling crystal 1-10 are set as shown in Figure 4.
Be attached at housing 10 water cooling torus 3-1 is set, water cooling torus 3-1 is connected with refrigeration machine.Heating element at laser comprises diode pumping light source 1-1,1-2; YAG rod laser work crystal 1-6, the devices such as acoustooptic Q-switching 1-8 and frequency-doubling crystal 1-10 are directly fitted separately TEC cooling piece 3-3 are set.Two cover refrigerating systems guarantee that on the one hand laser cavity 3-2 can be stabilized in 15 ° ~ 28 ° the scope in 2 ° ~ 33 ° scopes of ambient temperature, guarantee that on the other hand each device can adjust to separately optimum temperature separately; When high temperature, because the laser chamber temperature has been stabilized in 15 ° ~ 28 ° the scope, there is not the too large temperature difference in optical component and the situation of dewfall occurs in the laser cavity.So just can guarantee laser can be in 2 ° ~ 33 ° scopes of ambient temperature steady operation.

Claims (8)

1. the YAG green laser of the semiconductor double-end pumping of one kind high pulse peak power high repetition frequency, it comprises YAG rod laser work crystal, it is characterized in that YAG rod laser work crystal both sides are coaxial is respectively arranged with two pump light sources, be used for two pump light sources are focused on respectively two groups of optical coupling systems that are arranged along a straight line at place, YAG rod laser work germ nucleus, the "T"-shaped average resonant cavity of YAG rod laser work crystal is used for the cooling system that laser cools off.
2. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 1 is characterized in that optical coupling system comprises the first divergent mirror that sets gradually perpendicular to the first pump light source optical axis side, the first optical coupling system that the first focus lamp forms; The second divergent mirror, the second focus lamp that set gradually perpendicular to the second pump light source optical axis side form the second optical coupling system.
3. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 1 or 2, it is characterized in that "T"-shaped average resonant cavity comprises that vertical the first pump light source optical axis is positioned at the first total reflection lens of YAG rod laser work crystal one side, YAG rod laser work crystal opposite side and the second pump light source optical axis are the second total reflection lens of 45 ° of settings, and the outgoing mirror that is parallel to pump light source.
4. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 3 is characterized in that it also comprises frequency doubling system.
5. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 4, it is characterized in that described frequency doubling system comprises the acoustooptic Q-switching that is arranged at the outgoing mirror front end, the frequency-doubling crystal of outgoing mirror rear end, the frequency-doubling crystal rear end arranges filter.
6. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 4 is characterized in that described frequency doubling system comprises acoustooptic Q-switching, intermediate mirror, the frequency-doubling crystal that is arranged at the outgoing mirror front end and sets gradually.
7. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 1 is characterized in that described cooling system comprises independently the first cooling device that is arranged under each heater members; With YAG green laser the second cooling device.
8. the YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency as claimed in claim 7 is characterized in that described the first heat-exchanging cooling device is the TEC cooling piece; The second cooling device is water-cooling circulating device.
CN201210359204.5A 2012-09-25 2012-09-25 The YAG green laser of the semiconductor double-end pumping of high pulse peak power high repetition frequency Expired - Fee Related CN103050881B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720476A (en) * 2016-04-18 2016-06-29 长春理工大学 High peak narrow pulse laser based on sudden rise of laser gain

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548180A (en) * 1991-08-20 1993-02-26 Japan Radio Co Ltd Solid state laser excited by semiconductor laser
CN101055398A (en) * 2006-04-13 2007-10-17 深圳市大族激光科技股份有限公司 End surface pumped continuous red light laser
JP2008021879A (en) * 2006-07-13 2008-01-31 Japan Science & Technology Agency End surface excitation fine-rod laser gain module
CN101308992A (en) * 2008-06-30 2008-11-19 山东大学 Folding cavity self-raman frequency doubling completely solid yellow laser
CN101465513A (en) * 2009-01-09 2009-06-24 哈尔滨工程大学 Bistable Tm,Ho:YLE laser with bistable zone and adjustable width -
CN101719625A (en) * 2009-12-01 2010-06-02 武汉华工激光工程有限责任公司 High repetition frequency narrow pulse width semiconductor pumping green laser

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548180A (en) * 1991-08-20 1993-02-26 Japan Radio Co Ltd Solid state laser excited by semiconductor laser
CN101055398A (en) * 2006-04-13 2007-10-17 深圳市大族激光科技股份有限公司 End surface pumped continuous red light laser
JP2008021879A (en) * 2006-07-13 2008-01-31 Japan Science & Technology Agency End surface excitation fine-rod laser gain module
CN101308992A (en) * 2008-06-30 2008-11-19 山东大学 Folding cavity self-raman frequency doubling completely solid yellow laser
CN101465513A (en) * 2009-01-09 2009-06-24 哈尔滨工程大学 Bistable Tm,Ho:YLE laser with bistable zone and adjustable width -
CN101719625A (en) * 2009-12-01 2010-06-02 武汉华工激光工程有限责任公司 High repetition frequency narrow pulse width semiconductor pumping green laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
赵致民等: "高功率端面泵浦腔内倍频瓦级绿光激光器", 《激光技术》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105720476A (en) * 2016-04-18 2016-06-29 长春理工大学 High peak narrow pulse laser based on sudden rise of laser gain
CN105720476B (en) * 2016-04-18 2018-11-06 长春理工大学 The peak value narrow pulse laser to be jumped based on laser gain

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