CN104577700A - Intermediate infrared laser device with tunable inner cavity OPO - Google Patents
Intermediate infrared laser device with tunable inner cavity OPO Download PDFInfo
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- 239000013078 crystal Substances 0.000 claims abstract description 91
- 230000008878 coupling Effects 0.000 claims abstract description 25
- 238000010168 coupling process Methods 0.000 claims abstract description 25
- 238000005859 coupling reaction Methods 0.000 claims abstract description 25
- 238000005086 pumping Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims description 23
- 230000001276 controlling effect Effects 0.000 claims description 12
- 239000000835 fiber Substances 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000010287 polarization Effects 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 229910017502 Nd:YVO4 Inorganic materials 0.000 claims description 3
- 210000002469 basement membrane Anatomy 0.000 claims description 3
- 235000019504 cigarettes Nutrition 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 6
- 239000013307 optical fiber Substances 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- CHBCHAGCVIMDKI-UHFFFAOYSA-N [F].C=C Chemical group [F].C=C CHBCHAGCVIMDKI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention discloses an intermediate infrared laser device with an tunable inner cavity OPO. The intermediate infrared laser device comprises an LD semiconductor pumping source, an optical fiber coupling system, a laser gain crystal, an air-cooling radiator, a crystal temperature control furnace, a film-coated endoscope and a periodically poled crystal. The film-coated endoscope comprises a front-cavity mirror plane mirror M1, an intracavity focusing lens, an OPO front-cavity mirror plane mirror M2 and a rear-cavity mirror M3. A light source generated by the LD semiconductor pumping source passes through the optical fiber coupling system and is output. The front-cavity mirror plane mirror M1, the laser gain crystal, the intracavity focusing lens, the OPO front-cavity mirror plane mirror M2, the periodically poled crystal and the rear-cavity mirror M3 are sequentially arranged in the output direction of the coupling light source of the optical fiber coupling system in parallel. The laser gain crystal is arranged on the air-cooling radiator. The periodically poled crystal is arranged on the crystal temperature control furnace. The intermediate infrared laser device is simple and compact in structure, low in energy consumption and capable of being miniaturized and fully solidified easily, and can be mounted onboard or on vehicles.
Description
Technical field
The present invention relates to middle infrared laser, particularly based on the tunable middle infrared laser of inner chamber OPO of quasi-phase matched optical parametric oscillation.
Background technology
So far, it exports wave band nearly cover wave band all from deep ultraviolet to far infrared to laser developments.Wherein middle-infrared band (2 ~ 6 microns) is not only the minimum air infrared window of decay, and also covers the absworption peak of numerous atom and molecule in this wave band, so this wave band of laser has important application at numerous areas such as spectroscopy, remote sensing, medical treatment, environmental protection and military affairs.Therefore the focus of the research Cheng Liao various countries laser research and development of middle-infrared band laser.
With regard to producing the principle of middle-infrared band laser, be mainly divided into two kinds.One is that linear optics method produces: as semiconductor quantum successively cascaded laser, solid state laser, free electron laser, chemical laser, gas laser; Two is that nonlinear method produces: as by the optical frequency-doubling laser of material second nonlinear effect, difference frequency laser and OPO optical parameter oscillating laser etc.
Along with the development of nonlinear crystal technology, OPO optical parameter oscillating laser is simple with its structure, and easy all solidstate, the advantages such as power output is high, and output wavelength is tunable, show one's talent in middle infrared laser field.Be applied to middle-infrared band OPO at present, developing comparatively ripe nonlinear crystal has KTP, LiNbO3, KNbO3 etc.These crystal are good in the middle-infrared band transparency, and effective nonlinear coefficient is large, and crystal can obtain large-size, and antibody Monoclonal threshold value is high, easily obtain suitable pumping source.Important foundation has been established in the develop rapidly of these infrared OPO optical parameter oscillating lasers in being all.1971, Chromatix company was proposed the commercial OPO optical parameter oscillating laser of First.
OPO mid infrared laser can be divided three classes by phase matched mode: I type-Ⅱphase matching, II type-Ⅱphase matching and quasi-phase matched (QPM).The breakthrough of ferroelectric crystal Polarization technique in recent years, makes the periodical poled crystal OPO technology based on quasi-phase matched principle become focus.Current Polarization technique is the most ripe, and most widely used periodical poled crystal is period polarized LiNbO3 (PPLN).Its advantage is that effective nonlinear coefficient is large, and physical and chemical performance is stablized, unsuitable deliquescence, is one of first-selected nonlinear crystal of quasi-phase matched OPO.Shortcoming is that antibody Monoclonal threshold value is low, and responsive to thermal effect, the polarizing voltage needed during making is excessive.
Current OPO middle infrared laser be mainly outer-cavity structure, this feature optical parameter designing is simple, easily regulates.But normal light transformation efficiency is low, and energy consumption is high, and volume is larger.And often need water-cooling, system complex, Maintenance Difficulty, not easily move, be difficult to realize vehicle-mounted and airborne work.These shortcomings significantly limit OPO middle infrared laser and detect at airborne gas, the application of the aspects such as military electrooptical countermeasures.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides the tunable middle infrared laser of a kind of inner chamber OPO, a kind of simple and compact for structure, energy consumption is low, be easy to realize middle infrared laser that is miniaturized, all solidstate, and can regulation output wavelength, improve light light conversion efficiency.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
The tunable middle infrared laser of a kind of inner chamber OPO, comprises LD semiconductor pumping sources 1, fiber coupling system 2, laser gain crystal 3, air-cooled radiating device, crystal temperature controlling stove, plated film chamber mirror and periodical poled crystal 5; Plated film chamber mirror forms the resonant cavity of the tunable middle infrared laser of inner chamber OPO; Described plated film chamber mirror comprises front cavity mirror level crossing M1, chamber inner focusing lens 4, the flat mirror M2 and Effect of Back-Cavity Mirror M3 of OPO front cavity mirror; The light source that described LD semiconductor pumping sources 1 produces is through fiber coupling system 2 coupling output, and the coupling light source outbound course sequential parallel along fiber coupling system 2 arranges front cavity mirror level crossing M1, laser gain crystal 3, chamber inner focusing lens 4, the flat mirror M2 of OPO front cavity mirror, periodical poled crystal 5 and Effect of Back-Cavity Mirror M3; Described front cavity mirror level crossing M1 and the flat mirror M2 of OPO front cavity mirror is level crossing; Described chamber inner focusing lens 4 are convex lens; Described Effect of Back-Cavity Mirror M3 is plano-concave mirror; Described laser gain crystal 3 is arranged on air-cooled radiating device; Described periodical poled crystal 5 is arranged on crystal temperature controlling stove; Described laser gain crystal 3 adopts the thin parcel of cigarette;
The coupling light source of input is converted into 1064 nanometer lasers by laser gain crystal 3, and described 1064 nanometer lasers vibrate in resonant cavity; The waist radius size and location of the basic mode light beam that 1064 nanometer lasers that chamber inner focusing lens 4 adjust vibration in chamber produce; Periodical poled crystal is positioned at the place with a tight waist of described basement membrane.
Further, laser gain crystal 3 adopts Nd:YVO4 crystal or Nd:YAG crystal or Nd:GdVO4 crystal.
Further, described periodical poled crystal 5 adopts polarization cycle to mix Mg lithium columbate crystal, and its screen periods is 31.52 microns.
Further, described air-cooled radiating device adopts red copper as heat sink material, be provided with air channel, and the heat sink surface on this device is provided with groove below red copper.
Further, the flat mirror M2 and Effect of Back-Cavity Mirror M3 of described front cavity mirror level crossing M1, OPO front cavity mirror all plates multilayer film, is specially: front cavity mirror level crossing M1 is coated with successively plated film HT808 nanometer, HR1064 nanometer; The flat mirror M2 of OPO front cavity mirror is coated with plated film HT1064 nanometer, HR1.4 ~ 2.1 micron, HR2.8 ~ 3.8 micron successively; Effect of Back-Cavity Mirror M3 is coated with successively plated film HR1064 nanometer, HR1.4 ~ 2.1 micron, HT2.8 ~ 3.8 micron, and radius of curvature R=100 millimeter of Effect of Back-Cavity Mirror M3.
Further, the temperature of described crystal temperature controlling stove control cycle polarized crystal; By the multidimensional regulating platform 7 of L-type bracing frame 6 support and connection, tetrafluoroethene incubator 8 and the heating furnace 9 that is arranged in tetrafluoroethene incubator.Described heating furnace is arranged in four fluorine ethylene heat-insulation layers; The locality of described multidimensional regulating platform regulating cycle polarized crystal.
Beneficial effect: the tunable middle infrared laser of inner chamber OPO provided by the invention:
(1) the coupling pumping light of input is converted into 1064nm laser by laser gain crystal 3; Described 1064nm laser vibrates in resonant cavity, utilizes 1064nm laser power density larger in chamber, improves OPO process light phototranstormation efficiency, realizes middle-infrared band Laser output.
(2) highly doped MgO (4.6%) can improve PPLN photo-damage resistance (improve 100 times than unadulterated); The polarizing voltage of MgO:PPLN is also significantly less than PPLN on the other hand.Therefore PPMgLN overcomes PPLN antibody Monoclonal ability and obtains shortcoming, is a kind of periodical poled crystal having application prospect realizing QPM optical parametric oscillation.
(3) type of cooling of its heat abstractor air-cooled is air-cooled, and this device adopts red copper as Heat Conduction Material, and is provided with air channel, ventilates and carries out forced heat radiation.Heat sink surface is provided with multiple groove, increases area of dissipation.Meanwhile, the thin parcel of laser gain plane of crystal indium, further increases radiating efficiency, and this apparatus structure is simply compact, and energy consumption is low.
Accompanying drawing explanation
Fig. 1 is light channel structure schematic diagram of the present invention;
Fig. 2 is periodical poled crystal attemperating unit structural representation;
Fig. 3 is laser gain crystal air-cooled radiating device structural representation;
Wherein: LD semiconductor pumping sources 1, fiber coupling system 2, laser gain crystal 3, chamber inner focusing lens 4, periodical poled crystal 5, L-type bracing frame 6, multidimensional regulating platform 7, tetrafluoroethene incubator 8, heating furnace 9.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Light channel structure schematic diagram of the present invention as shown in Figure 1: comprise LD semiconductor pumping sources 1, fiber coupling system 2, laser gain crystal 3, air-cooled radiating device, crystal temperature controlling stove, plated film chamber mirror and periodical poled crystal 5; Plated film chamber mirror forms the resonant cavity of the tunable middle infrared laser of inner chamber OPO; Described plated film chamber mirror comprises front cavity mirror level crossing M1, chamber inner focusing lens 4, the flat mirror M2 and Effect of Back-Cavity Mirror M3 of OPO front cavity mirror; The light source that described LD semiconductor pumping sources 1 produces is through fiber coupling system 2 coupling output, and the coupling light source outbound course sequential parallel along fiber coupling system 2 arranges front cavity mirror level crossing M1, laser gain crystal 3, chamber inner focusing lens 4, the flat mirror M2 of OPO front cavity mirror, periodical poled crystal 5 and Effect of Back-Cavity Mirror M3; Described front cavity mirror level crossing M1 and the flat mirror M2 of OPO front cavity mirror is level crossing; Described chamber inner focusing lens 4 are convex lens; Described Effect of Back-Cavity Mirror M3 is plano-concave mirror; Described laser gain crystal 3 is arranged on air-cooled radiating device; Described periodical poled crystal 5 is arranged on crystal temperature controlling stove; Surface coverage one deck cigarette of described laser gain crystal 3 is thin;
LD semiconductor pumping sources 1 produces 808 nanometer pump lights successively by fiber coupling system 2 and front cavity mirror level crossing M1, and the coupling 808 nanometer pump light of input is converted into 1064 nanometer lasers by laser gain crystal 3; Described 1064 nanometer lasers vibrate in resonant cavity, by 1064 nanometer laser power densities larger in resonant cavity, substantially increase OPO process light phototranstormation efficiency, realize middle-infrared band Laser output.Chamber inner focusing lens 4 adjust for the waist radius size and location of the basic mode light beam produced 1064 nanometer lasers vibrated in chamber; Periodical poled crystal 5 is positioned at the place with a tight waist of internal oscillation basement membrane, and periodical poled crystal 5 forms single-resonant optical parametric oscillator (SRO) with the flat mirror M2 of OPO front cavity mirror together with Effect of Back-Cavity Mirror M3; Wherein Effect of Back-Cavity Mirror M3 plates multilayer film, and it is the Effect of Back-Cavity Mirror of 1064 nanometer light beams, is also the Effect of Back-Cavity Mirror of SRO.Laser gain crystal select doping content be 0.3% Nd:YVO
4crystal, periodical poled crystal 5 selects PPMgLN, and its screen periods is 31.52 microns.The flat mirror M2 and Effect of Back-Cavity Mirror M3 of described front cavity mirror level crossing M1, OPO front cavity mirror all plates multilayer film, is specially: front cavity mirror level crossing M1 is coated with successively plated film HT808 nanometer, HR1064 nanometer; The flat mirror M2 of OPO front cavity mirror is coated with plated film HT1064 nanometer, HR1.4 ~ 2.1 micron, HR2.8 ~ 3.8 micron successively; Effect of Back-Cavity Mirror M3 is coated with successively plated film HR1064 nanometer, HR1.4 ~ 2.1 micron, HT2.8 ~ 3.8 micron, and radius of curvature R=100 millimeter of Effect of Back-Cavity Mirror M3.
Laser gain crystal 3 can adopt Nd:YVO4 crystal or Nd:YAG crystal or Nd:GdVO4 or other can the laser crystal of radiation 1.06 micron wave length.
Changing because of the refractive index variation with temperature of non-linear cycle polarized crystal, in quasi-phase matched (QPM) OPO process, by controlling the temperature of nonlinear crystal, the wavelength exporting light can be changed.We select polarization cycle to mix Mg lithium columbate crystal in the present invention, and use crystal temperature controlling stove the temperature of periodical poled crystal 5 to be controlled at degeneracy point, achieve output wavelength tuning range large.
Pump beam radius is close with internal oscillation basic mode beam radius, reaches pattern matching, improves transformation efficiency, suppresses high-rder mode vibration.
Crystal temperature controlling stove of the present invention as shown in Figure 2, by the multidimensional regulating platform 7 of L-type bracing frame 6 support and connection, tetrafluoroethene incubator 8 and the heating furnace 9 (containing temperature sensor) that is arranged in tetrafluoroethene incubator.This crystal temperature controlling stove is firm in structure, stable performance (positive and negative 0.1 DEG C); And by regulating the knob above multidimensional regulating platform, can realize regulating arbitrarily periodical poled crystal attitude, this I&M for laser all has very great help.
Because laser gain crystal 3 pairs of pump lights can not absorb completely, a part is converted into heat energy, therefore needs to carry out good heat radiating to laser gain crystal.The air-cooled radiating device of our design is as Fig. 3.Device adopts red copper as Heat Conduction Material, below red copper, be provided with air channel, ventilates and carries out forced heat radiation.Heat sink surface is provided with multiple groove, increases area of dissipation.Meanwhile, the thin parcel of laser gain plane of crystal indium, further increases radiating efficiency.The type of cooling of its heat abstractor is air-cooled, and compact conformation is simple, and energy consumption is low.
The present invention adopts inner-cavity structure, can utilize the high power density in laserresonator, reduces threshold value; Pump light can be recycled, and improves light light conversion efficiency, adopts wind-cooling heat dissipating design simultaneously.These features make the present invention simple and compact for structure, and energy consumption is low, are easy to realize miniaturized, all solidstate, can be used for airborne vehicle-mounted.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the tunable middle infrared laser of inner chamber OPO, is characterized in that: comprise LD semiconductor pumping sources (1), fiber coupling system (2), laser gain crystal (3), air-cooled radiating device, crystal temperature controlling stove, plated film chamber mirror and periodical poled crystal (5); Plated film chamber mirror forms the resonant cavity of the tunable middle infrared laser of inner chamber OPO; Described plated film chamber mirror comprises front cavity mirror level crossing M1, chamber inner focusing lens (4), the flat mirror M2 and Effect of Back-Cavity Mirror M3 of OPO front cavity mirror; The light source that described LD semiconductor pumping sources (1) produces is through fiber coupling system (2) coupling output, and the coupling light source outbound course sequential parallel along fiber coupling system (2) arranges front cavity mirror level crossing M1, laser gain crystal (3), chamber inner focusing lens (4), the flat mirror M2 of OPO front cavity mirror, periodical poled crystal (5) and Effect of Back-Cavity Mirror M3; Described front cavity mirror level crossing M1 and the flat mirror M2 of OPO front cavity mirror is level crossing; Described chamber inner focusing lens (4) is convex lens; Described Effect of Back-Cavity Mirror M3 is plano-concave mirror; Described laser gain crystal (3) is arranged on air-cooled radiating device; Described periodical poled crystal (5) is arranged on crystal temperature controlling stove; Described laser gain crystal (3) adopts the thin parcel of cigarette;
The coupling light source of input is converted into 1064 nanometer lasers by laser gain crystal (3), and described 1064 nanometer lasers vibrate in resonant cavity; The waist radius size and location of the basic mode light beam that 1064 nanometer lasers of vibration produce in adjustment chamber, chamber inner focusing lens (4); Periodical poled crystal is positioned at the place with a tight waist of described basement membrane.
2. the tunable middle infrared laser of a kind of inner chamber OPO according to claim 1, is characterized in that: laser gain crystal (3) adopts Nd:YVO4 crystal or Nd:YAG crystal or Nd:GdVO4 crystal.
3. the tunable middle infrared laser of a kind of inner chamber OPO according to claim 1, is characterized in that: described periodical poled crystal (5) adopts polarization cycle to mix Mg lithium columbate crystal, and its screen periods is 31.52 microns.
4. the tunable middle infrared laser of a kind of inner chamber OPO according to claim 1, is characterized in that: described air-cooled radiating device adopts red copper as heat sink material, be provided with air channel, and the heat sink surface on this device is provided with groove below red copper.
5. the tunable middle infrared laser of a kind of inner chamber OPO according to claim 1, it is characterized in that: the flat mirror M2 and Effect of Back-Cavity Mirror M3 of described front cavity mirror level crossing M1, OPO front cavity mirror all plates multilayer film, be specially: front cavity mirror level crossing M1 is coated with successively plated film HT808 nanometer, HR1064 nanometer; The flat mirror M2 of OPO front cavity mirror is coated with plated film HT1064 nanometer, HR1.4 ~ 2.1 micron, HR2.8 ~ 3.8 micron successively; Effect of Back-Cavity Mirror M3 is coated with successively plated film HR1064 nanometer, HR1.4 ~ 2.1 micron, HT2.8 ~ 3.8 micron, and radius of curvature R=100 millimeter of Effect of Back-Cavity Mirror M3.
6. the tunable middle infrared laser of a kind of inner chamber OPO according to claim 1, is characterized in that: described crystal temperature controlling stove comprises by the multidimensional regulating platform (7) of L-type bracing frame (6) support and connection, tetrafluoroethene incubator (8) and the heating furnace (9) that is arranged in tetrafluoroethene incubator.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446052A (en) * | 2015-12-14 | 2016-03-30 | 华南师范大学 | Non-linear coupling method for achieving intermediate infrared wave band laser source tertiary cascade efficient frequency conversion |
| WO2020056655A1 (en) * | 2018-09-20 | 2020-03-26 | 烟台龙驰光电技术有限公司 | Near-infrared laser and laser generation method |
| CN111106508A (en) * | 2019-12-19 | 2020-05-05 | 中国兵器装备研究院 | Intracavity pumping mid-infrared pulse laser |
| CN111525379A (en) * | 2020-04-01 | 2020-08-11 | 南京大学 | Broadband topology load tunable Laguerre Gaussian optical parameter oscillator |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105446052A (en) * | 2015-12-14 | 2016-03-30 | 华南师范大学 | Non-linear coupling method for achieving intermediate infrared wave band laser source tertiary cascade efficient frequency conversion |
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| CN111106508A (en) * | 2019-12-19 | 2020-05-05 | 中国兵器装备研究院 | Intracavity pumping mid-infrared pulse laser |
| CN111525379A (en) * | 2020-04-01 | 2020-08-11 | 南京大学 | Broadband topology load tunable Laguerre Gaussian optical parameter oscillator |
| CN111525379B (en) * | 2020-04-01 | 2021-03-19 | 南京大学 | Broadband topology load tunable Laguerre Gaussian optical parameter oscillator |
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Application publication date: 20150429 |