CN109599334A - Manufacturing method for insulated gate bipolar transistor - Google Patents
Manufacturing method for insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN109599334A CN109599334A CN201710914105.1A CN201710914105A CN109599334A CN 109599334 A CN109599334 A CN 109599334A CN 201710914105 A CN201710914105 A CN 201710914105A CN 109599334 A CN109599334 A CN 109599334A
- Authority
- CN
- China
- Prior art keywords
- resistance
- temperature
- liner plate
- manufacturing
- soldering paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000005476 soldering Methods 0.000 claims abstract description 46
- 238000009434 installation Methods 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000012797 qualification Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H01L29/66348—
Landscapes
- Die Bonding (AREA)
Abstract
The present invention relates to a kind of manufacturing methods for insulated gate bipolar transistor comprising following steps: soldering paste is respectively set at least part of spaced two resistance installation liner plate；The both ends of resistance are placed individually into at least part for the described two resistance installation liner plate for being provided with the soldering paste；And temperature is increased, the both ends of the resistance to be linked together with described two liner plates respectively by soldering paste.It can be improved the production qualification rate of insulated gate bipolar transistor by this manufacturing method.
Description
Technical field
The present invention relates to the processing technique fields of insulated gate bipolar transistor, are used for insulated gate bipolar more particularly to one kind
The manufacturing method of transistor.
Background technique
Insulated gate bipolar transistor (IGBT) is the core devices of energy transformation and transmission, is commonly called as power electronic equipment
" CPU " is filled as national strategy new industry in rail traffic, smart grid, aerospace, electric car and new energy
It is standby to wait fields application extremely wide.Insulated gate bipolar transistor generally includes substrate, and the liner plate being installed on substrate, liner plate is on substrate
It is respectively formed spaced chip mounting area and resistance installation region, to be used for chip and resistance.
In the prior art, usually by being set between the resistance installation region being connect respectively with the both ends of resistance and they
It sets the weld tabs of monoblock type, the both ends of resistance is arranged at corresponding resistance installation region, and increasing temperature causes weld tabs to melt
Mode resistance and liner plate are linked together.However, in order to ensure weld tabs can effectively fuse to avoid resistance installing zone
Two liners where domain are directly linked together (that is, short circuit) by weld tabs, temperature and time of this method to welding
Requirement with higher.Therefore, the higher cost of this method is but easy to generate unqualified production in actual production process
Product, the low qualified of production.
Therefore, it is necessary to a kind of manufacturing methods for insulated gate bipolar transistor that can improve production qualification rate.
Summary of the invention
In view of the above-mentioned problems, the invention proposes a kind of manufacturing methods for insulated gate bipolar transistor, by this
Manufacturing method can be improved the production qualification rate of insulated gate bipolar transistor.
A kind of manufacturing method for insulated gate bipolar transistor is proposed according to the present invention comprising following steps:
Soldering paste is respectively set at least part of spaced two resistance installation liner plate；The both ends of resistance are placed individually into
It is provided at least part of described two resistance installation liner plate of the soldering paste；And temperature is increased, to be incited somebody to action by soldering paste
The both ends of the resistance link together with described two liner plates respectively.
It can be avoided that weld tabs is unblown and bring is short-circuit to manufacture insulated gate bipolar transistor by the above-mentioned manufacture method
Problem etc..Therefore, above-mentioned manufacturing method is conducive to improve the production qualification rate of insulated gate bipolar transistor.
In one embodiment, when increasing temperature, the temperature is increased to the charing of the scaling powder in the soldering paste
Degree.
In one embodiment, the temperature is first increased to the first temperature and is kept for a period of time, then be increased to the second temperature
It spends so that the scaling powder in the soldering paste carbonizes, the second temperature is higher than first temperature.
In one embodiment, in the range of the temperature is raised to from 280 DEG C to 400 DEG C.
In one embodiment, the area for the soldering paste being arranged on single resistance installation liner plate is that resistance can welding zone face
Long-pending 1/2 to 2 times, solder paste thickness are 1/2 to 2 times of resistance height.
In one embodiment, the amount for the scaling powder for including in the soldering paste is between 5wt% to 20wt%.
In one embodiment, above-mentioned manufacturing method is further comprising the steps of: before increasing temperature, with it is described two
Weld tabs is set on resistance installation liner plate chip installation liner plate spaced apart；And chip is placed into the chip, liner plate is installed
On；Wherein, when increasing temperature, the temperature is increased to the degree that weld tabs can melt, to pass through the weld tabs for the core
Piece and chip installation liner plate link together.
In one embodiment, chip installation the distance between the liner plate and the soldering paste are not less than 0.5cm.
In one embodiment, further comprising the steps of: after increasing temperature, to apply insulating layer coating, the insulating layer is extremely
The chip and chip installation liner plate are covered less.
In one embodiment, the insulating layer also covers the resistance installation liner plate and the resistance.
Compared with the prior art, the advantages of the present invention are as follows: manufacture insulated gate bipolar transistor by the above-mentioned manufacture method
Pipe can be avoided that weld tabs is unblown and bring short circuit problem etc..Therefore, above-mentioned manufacturing method is conducive to improve insulated gate bipolar
The production qualification rate of transistor.The insulated gate bipolar transistor after welding is washed in addition, being further without by the above method.
Detailed description of the invention
The present invention is described in more detail hereinafter with reference to attached drawing.Wherein:
Fig. 1 to Fig. 3 shows the step of manufacturing method according to the present invention for insulated gate bipolar transistor.
In the accompanying drawings, identical component uses identical appended drawing reference.The attached drawing is not drawn according to the actual ratio.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings.
Insulated gate bipolar transistor (IGBT) includes substrate 10, the liner plate 11,12,13 being fixed on substrate, and
The chip 33 and resistance 30 for being separately positioned on above-mentioned liner plate and being connected with them.
This insulated gate bipolar transistor can pass through the manufacturing method according to the present invention for insulated gate bipolar transistor
(hereinafter referred to as " manufacturing method ") is made.The manufacturing method is described in detail below in conjunction with Fig. 1 to Fig. 3.
As shown in Figure 1, in above-mentioned manufacturing method, it is necessary first to be respectively set on the substrate 10 resistance installation liner plate 11,
12 and chip install liner plate 13.Resistance installation liner plate 11,12 be spaced from each other, and for respectively with the both ends of resistance 30 31,32
It is connected.Chip is installed liner plate 13 and is all spaced apart with resistance installation liner plate 11,12, and for being connected with chip 33.
As shown in Fig. 2, soldering paste 21 is arranged in a part of resistance installation liner plate 11, at one of resistance installation liner plate 12
Divide upper setting soldering paste 22.Here soldering paste preferably includes scaling powder, and scaling powder is, for example, the mixture for including rosin and resin,
Its content in soldering paste is in the range of from 5wt% to 20wt%, preferably in the range of from 10wt% to 15w%.This
In soldering paste for example can be Alfar company production soldering paste, such as WS820.This soldering paste for resistance 30 and liner plate 11,12 it
Between connection it is highly beneficial.
In addition, can also be installed in chip and weld tabs 23 is arranged on liner plate 13 in step shown in Fig. 2.
In step as shown in Figure 3, one end (for example, cathode) 31 of resistance 30 is placed into and is provided with soldering paste 21
Resistance is installed on liner plate 11；The other end (for example, anode) 32 of resistance 30 is placed into the resistance installation lining for being provided with soldering paste 22
On plate 12.Resistance 30 can be tentatively adhered on liner plate 11,12 by soldering paste 21,22 (there is certain viscosity), so as to keep away
Exempt from the dislocation of resistance 30, and is therefore conducive to for resistance 30 being fixed on expected position.
In addition, chip 33 can be also placed into the chip installation liner plate 13 for being provided with weld tabs 23 in step shown in Fig. 3
On.
After this, it increases temperature to heat with the blank to above-mentioned insulated gate bipolar transistor, makes soldering paste therein
21,22 and weld tabs 23 melt, and thus resistance 30 and resistance installation liner plate 11,12 are linked together, and by chip 33 and core
Piece installation liner plate 13 links together.
Preferably, when increasing temperature, journey that temperature can be increased to make the scaling powder in soldering paste 21,22 to carbonize
Degree.The temperature (that is, second temperature) is in the range of from 280 DEG C to 400 DEG C, preferably in the range from 350 DEG C to 380 DEG C
It is interior.
In one embodiment, the raising of temperature can be carried out evenly.
In another embodiment, such as fusing point can be selected in the weld tabs of second temperature or so or slightly above second temperature
23.The first temperature lower than second temperature can first be raised the temperature to.At first temperature, soldering paste 21,22 melts, and has
Preferable wetability can successfully weld together at the both ends 31,32 of resistance 30 and resistance installation liner plate 11,12.This
One temperature is for example in the range of from 200 DEG C to 300 DEG C, preferably in the range of from 220 DEG C to 250 DEG C.It preferably, can be
It is kept at first temperature a period of time, such as keeps 3min to 10min, it is therefore preferable to 5min.Then, it then raises the temperature to
State second temperature.Weld tabs 23 melts at this time, and chip 33 and chip installation liner plate 13 are linked together.Meanwhile soldering paste 21,22
It is heated to scaling powder charing therein.
After this, temperature is reduced so that soldering paste 21,22 and weld tabs 23 solidify again, to realize resistance 30 and resistance peace
Fitted lining plate 11,12 is fixed together, and chip 33 and chip installation liner plate 13 are fixed together.By this
Mode can be electrically connected between two resistance installation liner plates 11,12 by resistance 30.In addition, being also able to achieve chip 33
Being electrically connected between chip installation liner plate 13.
Preferably, during being increased to second temperature from the first temperature, the rate of heating is from 5 DEG C/min to 100
DEG C/min in the range of, preferably from 25 DEG C/min to 50 DEG C/min in the range of.Such as in the first temperature and second temperature
In the case where 150 DEG C or so of difference, the heating rate for being increased to second temperature from the first temperature is about 50 DEG C/min.This set
Weld tabs 23 and soldering paste 21,22 are very advantageously melted, and can be welded to connect very abundant.
It should be understood that the welding to chip can also be carried out first, the welding of resistance is then carried out again.For example, in weld tabs
23 fusing point is higher than the case where temperature (that is, being higher than second temperature) for being suitable for carbonizing the scaling powder in soldering paste 21,22
Under, it can be welded as follows.
Firstly, by the setting of weld tabs 23 to chip installation liner plate 13.Then, chip 33 is placed into and is provided with weld tabs 23
Chip is installed on liner plate 13.Hereafter, temperature is increased, so that weld tabs 23 melts, chip 33 is achieved in and chip installs liner plate 13
Between welded connecting.After stating welded connecting in realization, and after cooling, liner plate 11,12 is installed at least in resistance
Soldering paste 21,22 is coated in a part.After this, the both ends of resistance 30 31,32 are placed individually on above-mentioned soldering paste 21,22.
Finally, increasing temperature again, the welded connecting between resistance 30 and resistance installation liner plate 11,12 is realized by soldering paste 21,22.
In addition, when first being welded to chip 33, the raised rate of temperature from 10 DEG C/min to 200 DEG C/range of min
It is interior, preferably from 50 DEG C/min to 100 DEG C/min in the range of.Then, when being welded to resistance 30, the raised speed of temperature
Rate from 1 DEG C/min to 200 DEG C/min in the range of, preferably from 25 DEG C/min to 50 DEG C/min in the range of.For example, can
First chip is welded with the higher heating rate of 100 DEG C/min.It after that, can be again with the lower liter of 50 DEG C/min
Warm rate welds resistance.This to the charing of the scaling powder in soldering paste advantageously.This set makes weld tabs 23 and weldering
Cream 21,22 can very advantageously melt, and can be welded to connect very abundant.
Since the scaling powder in soldering paste 21,22 has carbonized, the insulated gate bipolar as made from the above method is brilliant
The blank of body pipe is not required to the step of using washing and drying.
After this, insulating layer preferably is covered on above-mentioned blank.The insulating layer should at least cover chip 33 and chip
Liner plate 13 is installed.In addition, the insulating layer can also cover resistance 30 and resistance installation liner plate 11,12.Most preferably, which covers
Cover entire blank, including substrate 10.Thereby, it is possible to manufacture insulated gate bipolar transistor to complete.
The area shared on each resistance installation liner plate 13 of soldering paste 21,22 is that resistance can be 1/2 to 2 times of welding zone area.
Resistance can welding zone area changed according to specific resistance.In addition, 1/2 to 2 times with a thickness of resistance height of soldering paste.As a result,
In the case where ensuring that welding is gone on smoothly, the amount of the scaling powder after charing in soldering paste 21,22 is very small.Due in insulated gate
When bipolar transistor operation, resistance 30 therein only needs very small voltage (being usually, for example, 5V), therefore after above-mentioned charing
Scaling powder the electrical property of resistance 30 will not be had an impact, or the influence generated is negligible.
In addition, chip 33 therein needs biggish voltage (usually for example due to when insulated gate bipolar transistor works
In 1700V between 6500V), therefore, it is desirable to the distance between soldering paste 21,22 and chip 33 (for example, linear distance) to be not less than
0.5cm, it is therefore preferable to 1cm, more preferably 2cm.The scaling powder after the charing in soldering paste 21,22 will not be to chip 33 as a result,
Electrical property have an impact.
That is, in these cases, it can be ensured that insulated gate bipolar transistor obtained has preferable insulating properties.
The technique that above-mentioned welding process preferably uses vacuum back-flow to weld.
The production qualification rate of insulated gate bipolar transistor can be effectively improved by the above-mentioned manufacture method.Meanwhile passing through
Above-mentioned manufacturing method can also save washing and baking step indispensable in existing manufacturing method, ensure insulated gate bipolar
The manufacturing process of insulated gate bipolar transistor is effectively simplified under the premise of the structural intergrity and validity of transistor.
Although by reference to preferred embodiment, invention has been described, the case where not departing from the scope of the present invention
Under, various improvement can be carried out to it and can replace component therein with equivalent.Especially, as long as there is no structures to rush
Prominent, items technical characteristic mentioned in the various embodiments can be combined in any way.The invention is not limited to texts
Disclosed in specific embodiment, but include all technical solutions falling within the scope of the claims.
Claims (10)
1. a kind of manufacturing method for insulated gate bipolar transistor comprising following steps:
Soldering paste is respectively set at least part of spaced two resistance installation liner plate；
The both ends of resistance are placed individually on the soldering paste being arranged at least part of described two installation liner plates；With
And
Temperature is increased, is linked together so that liner plate is installed with described two resistance respectively in the both ends of the resistance by soldering paste.
2. the manufacturing method according to claim 1, which is characterized in that when increasing temperature, the temperature is increased to institute
State the degree of the scaling powder charing in soldering paste.
3. manufacturing method according to claim 2, which is characterized in that the temperature is first increased to the first temperature and keeps one
The section time, then second temperature is increased to so that the scaling powder in the soldering paste carbonizes, the second temperature is higher than first temperature
Degree.
4. manufacturing method according to claim 2 or 3, which is characterized in that the temperature is raised to from 280 DEG C to 400
In the range of DEG C.
5. manufacturing method according to any one of claims 1 to 4, which is characterized in that on single resistance installation liner plate
The area for the soldering paste being arranged is that resistance can be 1/2 to 2 times of welding zone area, and solder paste thickness is 1/2 to 2 times of resistance height.
6. according to claim 1 to manufacturing method described in any one of 5, which is characterized in that include in the soldering paste helps weldering
The amount of agent is between 5wt% to 20wt%.
7. according to claim 1 to manufacturing method described in any one of 6, which is characterized in that further comprising the steps of:
Before increasing temperature, weld tabs is set on the chip installation liner plate being spaced apart with described two resistance installation liner plate；With
And
Chip is placed on the chip installation liner plate；
Wherein, when increasing temperature, the temperature is increased to the degree that weld tabs can melt, to pass through the weld tabs for the core
Piece and chip installation liner plate link together.
8. manufacturing method according to claim 7, which is characterized in that between the chip installation liner plate and the soldering paste
Distance is not less than 0.5cm.
9. manufacturing method according to claim 7 or 8, which is characterized in that further comprising the steps of:
After increasing temperature, insulating layer coating is applied, the insulating layer at least covers the chip and chip installation liner plate.
10. manufacturing method according to claim 9, which is characterized in that the insulating layer also covers the resistance installation lining
Plate and the resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710914105.1A CN109599334A (en) | 2017-09-30 | 2017-09-30 | Manufacturing method for insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710914105.1A CN109599334A (en) | 2017-09-30 | 2017-09-30 | Manufacturing method for insulated gate bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109599334A true CN109599334A (en) | 2019-04-09 |
Family
ID=65955499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710914105.1A Pending CN109599334A (en) | 2017-09-30 | 2017-09-30 | Manufacturing method for insulated gate bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109599334A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605109A (en) * | 2001-01-30 | 2005-04-06 | 住友电气工业株式会社 | Resistor connector and its manufacturing method |
| CN1983542A (en) * | 2002-03-08 | 2007-06-20 | 株式会社日立制作所 | Method for manufacturing electronic device |
| CN102593111A (en) * | 2012-02-23 | 2012-07-18 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar transistor) module and manufacturing method of IGBT module |
| CN202502986U (en) * | 2012-02-23 | 2012-10-24 | 株洲南车时代电气股份有限公司 | Igbt module |
| CN103201829A (en) * | 2010-11-04 | 2013-07-10 | 半导体元件工业有限责任公司 | Circuit device and method for manufacturing same |
| US20150116973A1 (en) * | 2008-02-18 | 2015-04-30 | Cyntec Co., Ltd. | Electronic package structure |
| CN204834594U (en) * | 2015-07-15 | 2015-12-02 | 中山大洋电机股份有限公司 | Power semiconductor |
-
2017
- 2017-09-30 CN CN201710914105.1A patent/CN109599334A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605109A (en) * | 2001-01-30 | 2005-04-06 | 住友电气工业株式会社 | Resistor connector and its manufacturing method |
| CN1983542A (en) * | 2002-03-08 | 2007-06-20 | 株式会社日立制作所 | Method for manufacturing electronic device |
| US20150116973A1 (en) * | 2008-02-18 | 2015-04-30 | Cyntec Co., Ltd. | Electronic package structure |
| CN103201829A (en) * | 2010-11-04 | 2013-07-10 | 半导体元件工业有限责任公司 | Circuit device and method for manufacturing same |
| CN102593111A (en) * | 2012-02-23 | 2012-07-18 | 株洲南车时代电气股份有限公司 | IGBT (insulated gate bipolar transistor) module and manufacturing method of IGBT module |
| CN202502986U (en) * | 2012-02-23 | 2012-10-24 | 株洲南车时代电气股份有限公司 | Igbt module |
| CN204834594U (en) * | 2015-07-15 | 2015-12-02 | 中山大洋电机股份有限公司 | Power semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102018217231B4 (en) | Semiconductor device and method for manufacturing the same | |
| CN104966678B (en) | A kind of parallel welder of integrative packaging microwave device array and method | |
| CN103688352A (en) | Semiconductor device and method for manufacturing semiconductor device | |
| DE102016206542A1 (en) | Method for producing a semiconductor device | |
| CN104767417A (en) | Control circuit of intelligent power module, intelligent power module and manufacturing method thereof | |
| CN104112740A (en) | Intelligent power module and manufacturing method thereof | |
| US6675474B2 (en) | Electronic component mounted member and repair method thereof | |
| CN103201834A (en) | Semiconductor device and manufacturing method thereof | |
| Yoon et al. | Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles | |
| DE102011088218A1 (en) | Electronic power module for use in circuit module of e.g. engine control unit of motor car, has laminate comprising thermally conductive insulation sheet, where module lower side is fixed with copper strip conductor on laminate | |
| CN1780526B (en) | Electronic assembly with a heat sink | |
| CN103377950A (en) | Substrate and method of producing substrate for at least one power semiconductor component | |
| CN106356192A (en) | System for installing cylindrical electrolytic capacitor on a heat sink and a method for producing a connection | |
| CN203481230U (en) | Intelligent power module | |
| CN111092049B (en) | Copper-clad and high-power electronic chip all-copper interconnection packaging scheme for ceramic substrate | |
| CN109560693A (en) | Electric appliance, power device and forming method thereof | |
| CN109599334A (en) | Manufacturing method for insulated gate bipolar transistor | |
| US20210391231A1 (en) | Method of manufacturing semiconductor device | |
| CN101978797A (en) | Pcb mounting method | |
| CN116013879A (en) | Preparation method of silicon carbide power device based on diamond heat dissipation | |
| US11949221B2 (en) | Power electronic circuit and method for its fabrication | |
| CN203312284U (en) | Intelligent power module | |
| CN109728736A (en) | Electric appliance, power device and forming method thereof | |
| Pluschke | State-of-The-Art power module design for renewable energy application | |
| US20130087277A1 (en) | Method for bonding conductive material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200907 Address after: Room 309, semiconductor third line office building, Tianxin high tech park, Shifeng District, Zhuzhou City, Hunan Province Applicant after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Applicant before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190409 |