CN109585270A - 基于非晶衬底生长氮化物的方法及结构 - Google Patents
基于非晶衬底生长氮化物的方法及结构 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 28
- 230000003628 erosive effect Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 45
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 235000016768 molybdenum Nutrition 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 claims 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims 1
- WFGOJOJMWHVMAP-UHFFFAOYSA-N tungsten(iv) telluride Chemical compound [Te]=[W]=[Te] WFGOJOJMWHVMAP-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000011161 development Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 11
- 238000005411 Van der Waals force Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
一种基于非晶衬底生长氮化物的方法及结构，该方法包括以下步骤：在非晶组合衬底上沉积薄层二氧化硅，通过纳米压印的方式在非晶组合衬底上制备出二氧化硅阵列孔，对非晶衬底上的二氧化硅进行过腐蚀，将阵列孔底部的二氧化硅腐蚀掉，露出衬底部分；再以具有阵列孔的二氧化硅层作为掩模，在非晶组合衬底上选区生长氮化物材料。本发明提高了非晶组合衬底上外延氮化物材料的晶体质量，促进了基于氮化物材料的光电器件及电子电力器件的发展，有利于推动产业进步。
Description
技术领域
本发明属于半导体技术领域，特别是指基于非晶衬底生长氮化物的方法及结构。
背景技术
高质量单晶氮化物薄膜对光电器件以及电子电力器件的应用至关重要。传统衬底，包括硅衬底、蓝宝石衬底、碳化硅衬底、氮化镓衬底，因其与氮化物材料晶格失配较小，可生长出高质量的氮化物薄膜。不过传统衬底尺寸较小，在大规模制造应用中受限。对于非晶衬底金属及合金、非晶态玻璃、非晶态塑料具有大面积、低成本的特性，是一种理想的衬底材料。尽管具有较大的应用潜力，非晶衬底与氮化物之间没有晶格匹配，氮化物材料在非晶衬底上生长因缺乏整体外延而受阻。因此如何在非晶衬底上生长高质量氮化物是本领域所要解决的问题之一。
发明内容
有鉴于此，本发明的主要目的在于提供一种基于非晶衬底生长氮化物的方法及结构，以期至少部分地解决上述提及的技术问题中的至少之一。
为了达到上述目的，本发明的技术方案是这样实现的：
作为本发明的一个方面，提供一种基于非晶衬底生长氮化物的方法，包括以下步骤：步骤1：在一非晶组合衬底上沉积二氧化硅薄层，所述非晶组合衬底包括非晶衬底和二维材料薄层，其中所述二氧化硅薄层形成于二维材料薄层上；
步骤2：对所述二氧化硅薄层用纳米压印的方式制备阵列孔；
步骤3：通过过腐蚀将阵列孔底部的二氧化硅腐蚀掉以露出二维材料薄层；
步骤4：以具有阵列孔的二氧化硅薄层为掩膜，在所述非晶组合衬底上进行选区生长氮化物材料。
作为本发明的另一个方面，提供一种利用如上所述的方法得到的氮化物结构，其包括：非晶衬底；二维材料薄层，形成于所述非晶衬底上；具有阵列孔的二氧化硅薄层，形成于所述二维材料薄层上，所述阵列孔的底部裸露有二维材料；以及氮化物材料层，自裸露的二维材料外延生长于所述二氧化硅薄层上。
基于上述技术方案，本发明的有益效果在于：
(1)通过二维材料与非晶衬底相结合，以范德华力结合的方式在二维材料上实现氮化物外延生长，并以二氧化硅作为掩膜进行选区生长的方式形成了高质量的氮化物薄膜；
(2)通过提高在非晶组合衬底上氮化物薄膜的晶体质量，促进了基于氮化物材料的光电器件及电子电力器件的发展，有利于推动产业进步。
附图说明
图1为本发明基于非晶衬底生长氮化物的方法流程图；
图2为本发明实施例1基于石英玻璃衬底生长氮化铝的过程示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。
本发明通过二维材料与非晶衬底相结合，运用氮化物在二维材料上以范德华力结合的方式外延生长，解决了氮化物材料在非晶衬底上外延受阻的问题；但在二维材料上氮化物生长时的晶体取向是任意方向，很难形成高质量的薄膜，本发明选择以二氧化硅做掩膜进行选区生长，通过小区域内生长减少晶体取向任意性，提高了氮化物薄膜的晶体质量。
具体地，如图1所示，本发明基于非晶衬底生长氮化物的方法包括以下步骤：
步骤1：在一非晶组合衬底上形成二氧化硅薄层，非晶组合衬底包括非晶衬底和二维材料薄层，其中二氧化硅薄层形成于二维材料薄层上；
其中，非晶衬底选自金属及合金衬底、非晶态玻璃或非晶态塑料，其中，金属及合金衬底为选自Cu、Ta、Ag、Fe、Mo和W-Cu中的一种或多种的金属材料；所述非晶态玻璃选自普通玻璃或石英玻璃；所述非晶态塑料选自聚对苯二甲酸乙二醇酯(PET)、聚甲基丙烯酸甲酯(PMMA)或聚二甲基硅氧烷(PDMS)。
二维材料薄层可采用化学气相沉积法制备，形成的二维材料薄层可以是单层或多层结构。
其中，二氧化硅薄层的形成方法可根据实际需要采用化学气相沉积法(CVD)或等离子增强化学气相沉积法(PECVD)等常规方法；二氧化硅薄层厚度为
步骤2：对该二氧化硅薄层用纳米压印的方式制备出阵列孔；
其中，纳米压印的方法为本领域常规方法，此处纳米压印技术可以实现更为精细的阵列孔尺寸，得到的阵列孔的孔径为孔间距为该阵列孔底部与非晶组合衬底上表面的距离为
步骤3：通过过腐蚀将阵列孔底部的二氧化硅腐蚀掉，以露出非晶组合衬底部分；
作为示例，可用BOE溶液对所述二氧化硅薄层进行过腐蚀，腐蚀时间控制在25s至50s。
步骤4：以具有阵列孔的二氧化硅薄层为掩膜，在非晶组合衬底上选区生长氮化物材料。
其中，氮化物材料为氮化镓(GaN)、氮化铝(AlN)、氮化铟(InN)或按一定组分结合的三元合金InxGa1-xN、InxAl1-xN或AlxGa1-xN，其中x大于0且小于1；可利用分子束外延(MBE)、金属有机化合物化学气相沉淀(MOCVD)、氢化物气相外延(HVPE)的方法进行选区生长。
下面结合附图通过对实施例1的描述来进一步说明本发明。
实施例1
在本实施例中，首先如图2(a)所示，非晶组合衬底为石英玻璃和石墨烯组合，石英玻璃上的石墨烯是通过化学气相沉积(CVD)生长出的石墨烯薄膜，这里的石墨烯薄膜有单层和多层结构，其中多层为2至10层。这里的非晶组合衬底还可以是前文所列二维材料与非晶衬底中任意两种材料组合而成。
接着在石墨烯衬底表面利用等离子增强化学气相沉积(PECVD)沉积二氧化硅薄层，沉积温度300℃，功率50W，压力600mTorr，气体流量：N2O1000sccm；SiH4 500sccm；He25sccm；N2 475sccm，生长时间50分钟，所沉积的二氧化硅薄层厚度为如图2(b)所示。
之后通过纳米压印的方法制作二氧化硅阵列孔，设计纳米压印去除二氧化硅层厚度为本实施例中，阵列孔为圆孔，孔洞直径为孔间距为纳米压印过后二氧化硅阵列孔底部距组合衬底石墨烯表面距离为如图2(c)所示。
然后用BOE溶液(NH4F∶HF＝6∶1)对图2(c)所示的二氧化硅阵列孔进行过腐蚀，常温下腐蚀30秒，腐蚀过后如图2(d)所示，将阵列孔底部的石墨烯部分露出来。
最后将图2(d)中所示非晶组合衬底通过金属有机化合物化学气相沉淀(MOCVD)生长氮化铝，生长时压强为35Torr，V/III为580，生长温度为1200℃，时间为1.5小时，结果如图2(e)所示。
综上所述，相对于在非晶衬底平面上直接生长氮化物，晶体取向在整个面上杂乱无章，难以整体外延生长出高质量氮化物薄膜，本发明通过将二维材料与非晶衬底相结合，运用氮化物在二维材料上以范德华力结合的方式外延生长，并选择以二氧化硅做掩膜进行选区生长，通过小区域内生长减少晶体取向任意性，用于提高氮化物薄膜的晶体质量。通过提高在非晶组合衬底上氮化物薄膜晶体质量，促进了基于氮化物材料的光电器件及电子电力器件的发展，有利于推动产业进步。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于非晶衬底生长氮化物的方法，其特征在于，包括以下步骤：
步骤1：在一非晶组合衬底上形成二氧化硅薄层，所述非晶组合衬底包括非晶衬底和二维材料薄层，其中所述二氧化硅薄层形成于二维材料薄层上；
步骤2：对所述二氧化硅薄层用纳米压印的方式制备阵列孔；
步骤3：通过过腐蚀将阵列孔底部的二氧化硅腐蚀掉以露出二维材料薄层；
步骤4：以具有阵列孔的二氧化硅薄层为掩膜，在所述非晶组合衬底上进行选区生长氮化物材料。
2.根据权利要求1所述的方法，其特征在于，步骤1中：
所述二维材料选自石墨烯、二硫化钨、二硫化钼、二硒化钨、二硒化钼、二碲化钨或二碲化钼；
所述非晶衬底选自金属及合金衬底、非晶态玻璃或非晶态塑料，其中，所述金属及合金衬底为选自Cu、Ta、Ag、Fe、Mo和W-Cu中的一种或多种的金属材料；所述非晶态玻璃选自普通玻璃或石英玻璃；所述非晶态塑料选自聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯或聚二甲基硅氧烷。
3.根据权利要求2所述的方法，其特征在于，所述二维材料薄层通过化学气相沉积法形成于非晶衬底上。
4.根据权利要求1所述的方法，其特征在于，步骤1中，所述二维材料薄层为单层或多层结构。
5.根据权利要求书1所述的方法，其特征在于，步骤2中，所述二氧化硅薄层通过化学气相沉积法或等离子增强化学气相沉积法形成。
6.根据权利要求书5所述的方法，其特征在于，所述二氧化硅薄层厚度为
7.根据权利要求书1所述的方法，其特征在于，步骤3中，所述阵列孔的孔径为孔间距为所述阵列孔底部与非晶组合衬底上表面的距离为
8.根据权利要求书1所述的方法，其特征在于，步骤4中，用BOE溶液对所述二氧化硅薄层进行过腐蚀，腐蚀时间控制在25s至50s。
9.根据权利要求书1所述的方法，其特征在于，步骤5中，利用分子束外延、金属有机化合物化学气相沉淀或氢化物气相外延的方法生长所述氮化物材料，所述氮化物材料选自氮化镓、氮化铝和氮化铟中的一种或多种的合金。
10.一种利用如权利要求1至9任意一项所述的方法得到的氮化物结构，其特征在于，其包括：
非晶衬底；
二维材料薄层，形成于所述非晶衬底上；
具有阵列孔的二氧化硅薄层，形成于所述二维材料薄层上，所述阵列孔的底部裸露有二维材料；以及
氮化物材料层，自裸露的二维材料外延生长于所述二氧化硅薄层上。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980061A (zh) * | 2019-04-10 | 2019-07-05 | 王晓靁 | 采用2d材料磊晶去疵单晶基板及其制备方法和制作组件 |
| CN110911465A (zh) * | 2019-11-29 | 2020-03-24 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法和显示装置 |
| CN112802930A (zh) * | 2021-04-15 | 2021-05-14 | 至芯半导体(杭州)有限公司 | Iii族氮化物衬底制备方法和半导体器件 |
| WO2021217302A1 (zh) * | 2020-04-26 | 2021-11-04 | 苏州晶湛半导体有限公司 | 半导体结构的制作方法及半导体结构 |
| CN115050864A (zh) * | 2022-08-16 | 2022-09-13 | 北京大学 | 一种基于非单晶衬底的单晶氮化物Micro-LED阵列的制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201503A (zh) * | 2011-03-30 | 2011-09-28 | 苏州纳维科技有限公司 | 一种iii族氮化物衬底的生长方法、衬底以及led |
| CN104099662A (zh) * | 2014-07-11 | 2014-10-15 | 中国科学院半导体研究所 | 一种在石墨烯薄膜上剥离外延材料的方法 |
| CN104576326A (zh) * | 2013-10-18 | 2015-04-29 | 北京邮电大学 | 一种硅基ⅲ-v族砷化镓半导体材料制备方法和系统 |
| CN106048555A (zh) * | 2016-05-30 | 2016-10-26 | 中国科学院半导体研究所 | 利用石墨烯插入层在玻璃衬底上外延AlN薄膜的方法 |
| CN106868596A (zh) * | 2017-01-19 | 2017-06-20 | 中国工程物理研究院电子工程研究所 | 基于原子层沉积氮化铝的氮化镓生长方法和氮化镓激光器 |
| US9722113B2 (en) * | 2014-07-23 | 2017-08-01 | The Regents Of The University Of Michigan | Tetradymite layer assisted heteroepitaxial growth and applications |
-
2018
- 2018-11-15 CN CN201811362745.7A patent/CN109585270B/zh active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201503A (zh) * | 2011-03-30 | 2011-09-28 | 苏州纳维科技有限公司 | 一种iii族氮化物衬底的生长方法、衬底以及led |
| CN104576326A (zh) * | 2013-10-18 | 2015-04-29 | 北京邮电大学 | 一种硅基ⅲ-v族砷化镓半导体材料制备方法和系统 |
| CN104099662A (zh) * | 2014-07-11 | 2014-10-15 | 中国科学院半导体研究所 | 一种在石墨烯薄膜上剥离外延材料的方法 |
| US9722113B2 (en) * | 2014-07-23 | 2017-08-01 | The Regents Of The University Of Michigan | Tetradymite layer assisted heteroepitaxial growth and applications |
| CN106048555A (zh) * | 2016-05-30 | 2016-10-26 | 中国科学院半导体研究所 | 利用石墨烯插入层在玻璃衬底上外延AlN薄膜的方法 |
| CN106868596A (zh) * | 2017-01-19 | 2017-06-20 | 中国工程物理研究院电子工程研究所 | 基于原子层沉积氮化铝的氮化镓生长方法和氮化镓激光器 |
Non-Patent Citations (2)
| Title |
|---|
| CHUNG, K; LEE, CH; YI, GC: "Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices", 《SCIENCE》 * |
| CHUNG, K; PARK, SI; BAEK, H;CHUNG, JS;YI, GC: "High-quality GaN films grown on chemical vapor-deposited graphene films", 《NPG ASIA MATERIALS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980061A (zh) * | 2019-04-10 | 2019-07-05 | 王晓靁 | 采用2d材料磊晶去疵单晶基板及其制备方法和制作组件 |
| WO2020207234A1 (zh) * | 2019-04-10 | 2020-10-15 | 王晓靁 | 采用2d材料磊晶去疵单晶基板及其制备方法和制作组件 |
| CN110911465A (zh) * | 2019-11-29 | 2020-03-24 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法和显示装置 |
| CN110911465B (zh) * | 2019-11-29 | 2022-11-25 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法和显示装置 |
| WO2021217302A1 (zh) * | 2020-04-26 | 2021-11-04 | 苏州晶湛半导体有限公司 | 半导体结构的制作方法及半导体结构 |
| CN112802930A (zh) * | 2021-04-15 | 2021-05-14 | 至芯半导体(杭州)有限公司 | Iii族氮化物衬底制备方法和半导体器件 |
| CN115050864A (zh) * | 2022-08-16 | 2022-09-13 | 北京大学 | 一种基于非单晶衬底的单晶氮化物Micro-LED阵列的制备方法 |
| CN115050864B (zh) * | 2022-08-16 | 2022-11-25 | 北京大学 | 一种基于非单晶衬底的单晶氮化物Micro-LED阵列的制备方法 |
| WO2024036680A1 (zh) * | 2022-08-16 | 2024-02-22 | 北京大学 | 一种基于非单晶衬底的单晶氮化物Micro-LED阵列的制备方法 |
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