CN109581330A - A kind of integrated optics phased array chip - Google Patents
A kind of integrated optics phased array chip Download PDFInfo
- Publication number
- CN109581330A CN109581330A CN201811647585.0A CN201811647585A CN109581330A CN 109581330 A CN109581330 A CN 109581330A CN 201811647585 A CN201811647585 A CN 201811647585A CN 109581330 A CN109581330 A CN 109581330A
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- integrated optics
- phased array
- phased
- array chip
- plate area
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- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010276 construction Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 11
- 239000012792 core layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A kind of integrated optics phased array chip provided by the invention, the plate area including being set to phased waveguide array side, the light beam of the phased waveguide array are exported to the plate area;The plate area includes the substrate layer, sandwich layer and covering being stacked, and the other end relative to the phased waveguide array is provided with angle spread structure;The angle spread structure is the optical texture of changeable incident ray propagation path.Increase on piece lens or optical grating construction by exporting plate area in one-dimensional phased chip, expands scanning angle range, improve chip operation performance, while compact-sized, have the advantages that high reliability.The scheme for using multiple chip portfolio expanded- angles compared with prior art reduces the complexity of system, controls the cost of difficulty and system.It is conducive to the miniaturization of chip using grating outside piece or the scheme of lens control scanning angle, the present invention, keeps assembling process more simple, while increasing the reliability of system.
Description
Technical field
The present invention relates to optical phased array technical fields, and in particular to a kind of integrated optics phased array chip.
Background technique
Laser radar receives the detection that reflection echo realizes distance or pattern by transmitting scanning laser beam, in unmanned plane,
Automatic Pilot, the fields such as environmental monitoring have a wide range of applications.Laser radar realizes that the common approach of light beam scanning includes machinery
Rotation, MEMS and optical phased array.
Optical phased array technology, which refers to, to be made to generate specific phase difference between Waveguide array by modulation system, realizes beam angle
The rotation of degree, compared with machinery rotation and MEMS light beam sweeping scheme, optical phased array radar is free of rotating element, scanning speed
Fastly, the advantages that scanning range is big, and integrated level is high, high reliablity, at low cost.
The principle for realizing optical phased array waveguide phase-modulation includes the materials such as liquid crystal, cruel load lanthanium titanate ceramics, lithium niobate
Electrooptic effect, the thermo-optic effect etc. of silicon substrate integrated optics chip.Wherein, silicon substrate integrated optics chip and semiconductor CMOS process
It is compatible, it can be achieved that ray detector on piece is integrated, it is compact-sized, it is at low cost.Therefore, based on the phased of silicon substrate integrated optics chip
Battle array laser radar has great application prospect.
Light beam scanning angle range is one of important performance characteristic of laser radar.For optical phased array, output
The scanning angle range of light beam is mainly influenced by spacing between output unit.Output unit spacing is smaller, scanning angle model
It encloses bigger.However, other performance parameters of output beam, such as beam divergence angle, Sidelobe Suppression ratio are similarly subjected between output unit
Away from influence, output unit spacing reduces, and will lead to beam divergence angle increase, the crosstalk between adjacent waveguide increases, secondary lobe suppression
System is than deterioration.Therefore, for integrated optics phased array chip, while improving one single chip scanning angle range, in order to protect
It is constant to demonstrate,prove the angle of divergence, needs to increase number of channels.In consideration of it, the Chinese patent literature of Publication No. CN106575017A is recorded
Collimated beam of sound is formed and the optical phased array column chip of manipulation and the method using it.By the way that multiple optical phased arrays are arranged
Column chip is realized and increases number of channels and then expanded- angle.
However its there are still following defects: using extensive intensive phase control unit, so that chip structure, modulation circuit is more
It is complicated;It simultaneously in order to reduce the crosstalk between waveguide, needs using high contrast waveguide, to the requirement on machining accuracy of chip into one
Step increases.Using the scheme of multiple chip portfolio expanded- angles, the complexity of system is increased, controls difficulty and system
Cost.
Summary of the invention
Therefore, can be increased using extensive intensive phase control unit come expansion optical phased array angle in the prior art to overcome
The problem of adding complexity in circuits and system to control difficulty, to provide a kind of integrated optics phased array chip.
Design scheme of the invention is as follows:
A kind of integrated optics phased array chip, the plate area including being set to phased waveguide array side, the phased wave
The light beam for leading array is exported to the plate area;The plate area includes the substrate layer, sandwich layer and covering being stacked, relative to
The other end of the phased waveguide array is provided with angle spread structure;The angle spread structure is that changeable incident ray passes
Broadcast the optical texture in path.
Preferably, the angle spread structure is concavees lens or convex lens.
Preferably, the angle spread structure is at the end of the covering and the sandwich layer far from the phased waveguide array
The molding curved-surface structure in portion.
Preferably, the angle spread structure is reflecting mirror.
Preferably, the angle spread structure includes the end of the covering and the sandwich layer far from the phased waveguide array
The inclined-plane of portion's etching and the high-reflectivity metal for being deposited on the inclined-plane.
Preferably, the angle spread structure is optical grating construction.
Preferably, the optical grating construction is etching in the periodic structure etched on the sandwich layer.
Preferably, the substrate layer is slab construction;Sandwich layer slab construction made of light-transmitting materials;The covering
For the slab construction made of light-transmitting materials, it is set between the substrate layer and the sandwich layer, the refractive index of the covering is less than
The refractive index of the sandwich layer.
Preferably, the substrate layer and the sandwich layer are monocrystalline silicon, and the covering is silica.
Preferably, the plate area is 0.1-6mm in the length of the direction of beam propagation.
Technical solution of the present invention has the advantages that
1, a kind of integrated optics phased array chip provided by the invention, the plate including being set to phased waveguide array side
Area, the light beam of the phased waveguide array are exported to the plate area;The plate area includes the substrate layer being stacked, sandwich layer
And covering, the other end relative to the phased waveguide array are provided with angle spread structure;The angle spread structure is can
Change the optical texture of incident ray propagation path.Increase on piece lens or grating by exporting plate area in one-dimensional phased chip
Structure expands scanning angle range, improves chip operation performance, while compact-sized, has the advantages that high reliability.Compared to existing
There is technology to use the scheme of multiple chip portfolio expanded- angles, present invention reduces the complexity of system, control difficulty and is
The cost of system.It is conducive to the small of chip using the outer grating of piece or the scheme of lens control scanning angle, the present invention compared with prior art
Type keeps assembling process more simple, while increasing the reliability of system.
2, a kind of integrated optics phased array chip provided by the invention, the angle spread structure can be using not similar shapes
Formula, such as concavees lens or convex lens, reflecting mirror or optical grating construction.
3, a kind of integrated optics phased array chip provided by the invention, when angle spread structure be lens, the lens by
Curved plate area-Air Interface realizes that light beam reflects at interface.Change incidence angle by design interface shape, can change
The angular deflection of darkening beam.Since plate area effective refractive index is higher than air, when curved surface is concave surface (R < 0, the center of circle and waveguide
Array is located at the two sides of curved surface) when, refraction angle can be made to increased for the plane of (R >=0) or prominent face structure,
Realize angle spread effect;
4, a kind of integrated optics phased array chip provided by the invention, when angle spread structure is reflecting mirror, the reflection
Mirror is etched into inclined-plane by the covering and the sandwich layer of plate area end and deposits high-reflectivity metal realization, and light beam is in metal interface
It reflects.By designing inclination, changes incidence angle, the shooting angle of light beam after reflection can be changed.Work as reflecting mirror
Inclination angle change into 60 degree by 30 degree, corresponding scanning angle range is ± 30 degree, and bigger scanning angle can be by expanding instead
Penetrate the realization of mirror inclination angle range.
5, a kind of integrated optics phased array chip provided by the invention, when angle spread structure be grating, the grating by
Periodic structure realization is etched on plate area sandwich layer, grating diffration angle is determined by cycle length, long by the design cycle
Degree and duty cycle parameters can be changed the angle of diffraction and diffracted intensity of light beam, change angle of diffraction between 0-180 degree.
6, a kind of integrated optics phased array chip provided by the invention, the substrate layer are slab construction;The sandwich layer by
Slab construction made of light-transmitting materials;The covering is the slab construction made of light-transmitting materials, is set to the substrate layer and institute
It states between sandwich layer, the refractive index that the refractive index of the covering is less than the sandwich layer makes to reduce scattering of the light into covering
Light is propagated in the sandwich layer.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is integrated optics phased array angle spread device (lens) structure top view of the invention;
Fig. 2 is integrated optics phased array angle spread device (lens) structural side view of the invention;
Fig. 3 is integrated optics phased array angle spread device (reflecting mirror) structure top view of the invention;
Fig. 4 is integrated optics phased array angle spread device (reflecting mirror) structural side view of the invention;
Fig. 5 is integrated optics phased array angle spread device (grating) structure top view of the invention;
Fig. 6 is integrated optics phased array angle spread device (grating) structural side view of the invention.
Description of symbols:
The phased waveguide array of 1-;2- plate area;3- substrate layer;4- sandwich layer;5- covering;6- concavees lens;7- reflecting mirror;8- light
Grid structure.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected;It can
To be mechanical connection, it is also possible to be electrically connected;It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
A kind of integrated optics phased array chip provided by the invention, the plate including being set to phased 1 side of waveguide array
Area 2, the light beam of the phased waveguide array 1 are exported to the plate area 2.The plate area 2 includes the substrate layer being stacked
3, sandwich layer 4 and covering 5, the other end relative to the phased waveguide array 1 are provided with angle spread structure, the plate area 2
It is 0.1-6mm in the length of the direction of beam propagation, changes the length in plate area 2, may make the size of angle spread structure
And spatial position change rate changes, and according to process conditions are designed and prepared, can carry out to the length in plate area 2 excellent
Change.The substrate layer 3 is slab construction, 4 slab construction made of light-transmitting materials of sandwich layer;The covering 5 is by light transmission
Slab construction made of material is set between the substrate layer 3 and the sandwich layer 4, and the refractive index of the covering 5 is less than the core
The refractive index of layer 4 propagates light in the sandwich layer 4 to reduce scattering of the light into covering 5.3 He of substrate layer
The sandwich layer 4 is monocrystalline silicon, and the covering 5 is silica.
As depicted in figs. 1 and 2, the angle spread structure is concavees lens 6 or convex lens, and incident ray can be changed and propagate road
The optical texture of diameter, the angle spread structure are in the covering 5 and the sandwich layer 4 far from the phased waveguide array 1
The molding curved-surface structure in end.Change incidence angle by design interface shape, the angular deflection of light beam can be changed.Using convex lens
It can also realize the purpose of angular deflection.Since 2 effective refractive index of plate area is higher than air, when curved surface is concave surface R < 0, circle
When the heart and waveguide array are located at the two sides of curved surface, can make refraction angle for the plane of R >=0 or prominent face structure
Increase, realizes angle spread effect.
In the present embodiment, 16 tunnel phased array waveguide channels Shuo Wei, sandwich layer 4 thickness 220nm, width 0.5um, spacing 5um, this
When main peak angular breadth be 1 degree, scanning angle corresponding to pi phase shift is about ± 18 degree in air, is ± 6 in plate area 2
Degree;Used angle spread structure is lens arrangement, and 2 length of plate area is 2mm;The effective refractive index in plate area 2 is about
2.8, corresponding angle of total reflection incidence is about 21 degree;Under pi phase shifting scenarios, θ 0=6 degree is designed by lens curved surface, makes θ 1
=15 degree, then θ 2=46 degree, maximum deflection angle θ 0+ θ 2- θ 1=37 degree at this time, compared with when output end face is plane, scanning
Angle extends to 37 degree by 18 degree, increases one times.Said chip performance parameter, 1 degree of main peak width, 37 degree of scanning angle, if
Do not use angle spread device proposed by the invention to realize, then requiring waveguide spacing is 2.5um, and number of channels is 32 tunnels,
The complex degree of structure for making chip and modulation difficulty are doubled.The present invention proposes a kind of integrated optics phase regarding to the issue above
Battle array chip slapper upper angle expansion structure is controlled, increases on piece lens or optical grating construction by exporting plate area 2 in one-dimensional phased chip
8, expand scanning angle range, improves chip operation performance, while compact-sized, have the advantages that high reliability.
As another embodiment, as shown in Figure 3 and Figure 4, the angle spread structure is reflecting mirror 7.The angle
Expansion structure includes the inclined-plane of the end etching of the covering 5 and the sandwich layer 4 far from the phased waveguide array 1 and is deposited on
The high-reflectivity metal on the inclined-plane.Light beam is reflected in metal interface.By design 7 inclination angle of reflecting mirror, change incidence angle,
The shooting angle of changeable light beam after reflection.When the inclination angle of reflecting mirror 7 changes into 60 degree by 30 degree, corresponding scanning angle model
Enclosing is ± 30 degree, and bigger scanning angle can be realized by 7 inclination angle range of spread reflection mirror.
As another embodiment, as shown in Figure 5 and Figure 6, the angle spread structure is optical grating construction 8.The light
Grid structure 8 is etching in the periodic structure etched on the sandwich layer 4.Grating diffration angle is determined by cycle length, is passed through
Design cycle length and duty cycle parameters can be changed the angle of diffraction and diffracted intensity of light beam, make angle of diffraction between 0-180 degree
Change.
Light beam scanning angle range is one of important performance characteristic of laser radar.For optical phased array, output
The scanning angle range of light beam is mainly influenced by spacing between output unit.Output unit spacing is smaller, scanning angle model
It encloses bigger.However, other performance parameters of output beam, such as beam divergence angle, Sidelobe Suppression ratio are similarly subjected between output unit
Away from influence, output unit spacing reduces, and will lead to beam divergence angle increase, the crosstalk between adjacent waveguide increases, secondary lobe suppression
System is than deterioration.Therefore in the prior art, for integrated optics phased array chip, the same of one single chip scanning angle range is being improved
When, in order to guarantee that the angle of divergence is constant, need to increase number of channels, using extensive intensive phase control unit, so that chip structure,
Modulation circuit is more complicated;Simultaneously in order to reduce the crosstalk between waveguide, the processing to chip using high contrast waveguide is needed
Required precision further increases.Using the scheme of multiple chip portfolio expanded- angles, the complexity of system is increased, control is difficult
The cost of degree and system.And the scheme of the outer grating of piece or lens control scanning angle is unfavorable for the miniaturization of chip, makes to assemble
Process is increasingly complex, while reducing the reliability of system.
It should be pointed out that the material of the substrate layer 3, the covering 5, the sandwich layer 4 be not limited to the present embodiment in
Material out can also be other materials.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of integrated optics phased array chip, it is characterised in that: the plate area including being set to phased waveguide array (1) side
(2), the light beam of the phased waveguide array (1) is exported to the plate area (2);The plate area (2) includes being stacked
Substrate layer (3), sandwich layer (4) and covering (5), the other end relative to the phased waveguide array (1) are provided with angle spread knot
Structure;The angle spread structure is the optical texture of changeable incident ray propagation path.
2. integrated optics phased array chip according to claim 1, which is characterized in that the angle spread structure is recessed
Mirror (6) or convex lens.
3. integrated optics phased array chip according to claim 2, which is characterized in that the angle spread structure is in institute
State the molding curved-surface structure in end of covering (5) and the sandwich layer (4) far from the phased waveguide array (1).
4. integrated optics phased array chip according to claim 1, which is characterized in that the angle spread structure is reflection
Mirror (7).
5. integrated optics phased array chip according to claim 4, which is characterized in that the angle spread structure includes institute
It states the inclined-plane of the end etching of covering (5) and the sandwich layer (4) far from the phased waveguide array (1) and is deposited on the inclined-plane
High-reflectivity metal.
6. integrated optics phased array chip according to claim 1, which is characterized in that the angle spread structure is grating
Structure (8).
7. integrated optics phased array chip according to claim 6, which is characterized in that the optical grating construction (8) is etching
In the periodic structure etched on the sandwich layer (4).
8. integrated optics phased array chip described in any one of -7 according to claim 1, which is characterized in that the substrate layer
It (3) is slab construction;Sandwich layer (4) slab construction made of light-transmitting materials;The covering (5) of light-transmitting materials by being made
Slab construction, be set between the substrate layer (3) and the sandwich layer (4), the refractive index of the covering (5) is less than the sandwich layer
(4) refractive index.
9. integrated optics phased array chip according to claim 8, which is characterized in that the substrate layer (3) and the core
Layer (4) is monocrystalline silicon, and the covering (5) is silica.
10. integrated optics phased array chip according to claim 1, which is characterized in that the plate area (2) is described
The length of direction of beam propagation is 0.1-6mm.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110044394A (en) * | 2019-05-08 | 2019-07-23 | 浙江大学昆山创新中心 | A kind of novel light wave leads phase-array scanning system |
CN111596405A (en) * | 2020-06-12 | 2020-08-28 | 吉林大学 | Optical waveguide and laser radar |
CN111913165A (en) * | 2019-05-08 | 2020-11-10 | 宁波舜宇车载光学技术有限公司 | Detection system and detection method thereof |
CN112630884A (en) * | 2020-12-22 | 2021-04-09 | 联合微电子中心有限责任公司 | Waveguide grating antenna array for optical phased array and preparation method thereof |
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US20180120422A1 (en) * | 2016-11-03 | 2018-05-03 | Quanergy Systems, Inc. | Low cost and compact optical phased array with electro-optic beam steering |
CN108398842A (en) * | 2018-04-18 | 2018-08-14 | 中国科学院西安光学精密机械研究所 | Optical phased array chip based on serial optical antenna |
CN209746121U (en) * | 2018-12-29 | 2019-12-06 | 国科光芯(海宁)科技股份有限公司 | integrated optical phased array chip |
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US20170255077A1 (en) * | 2016-03-02 | 2017-09-07 | Marcel W. Pruessner | Chip-scale two-dimensional optical phased array with simplified controls |
US20180120422A1 (en) * | 2016-11-03 | 2018-05-03 | Quanergy Systems, Inc. | Low cost and compact optical phased array with electro-optic beam steering |
CN108398842A (en) * | 2018-04-18 | 2018-08-14 | 中国科学院西安光学精密机械研究所 | Optical phased array chip based on serial optical antenna |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN110044394A (en) * | 2019-05-08 | 2019-07-23 | 浙江大学昆山创新中心 | A kind of novel light wave leads phase-array scanning system |
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CN111596405A (en) * | 2020-06-12 | 2020-08-28 | 吉林大学 | Optical waveguide and laser radar |
CN111596405B (en) * | 2020-06-12 | 2021-07-06 | 吉林大学 | Optical waveguide and laser radar |
CN112630884A (en) * | 2020-12-22 | 2021-04-09 | 联合微电子中心有限责任公司 | Waveguide grating antenna array for optical phased array and preparation method thereof |
CN112630884B (en) * | 2020-12-22 | 2023-09-08 | 联合微电子中心有限责任公司 | Waveguide grating antenna array for optical phased array and preparation method thereof |
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