CN109581330B - Integrated optical phased array chip - Google Patents
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- CN109581330B CN109581330B CN201811647585.0A CN201811647585A CN109581330B CN 109581330 B CN109581330 B CN 109581330B CN 201811647585 A CN201811647585 A CN 201811647585A CN 109581330 B CN109581330 B CN 109581330B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 38
- 239000012792 core layer Substances 0.000 claims abstract description 36
- 238000005253 cladding Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002592 echocardiography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention provides an integrated optical phased array chip, which comprises a flat plate area arranged at one side of a phased waveguide array, wherein light beams of the phased waveguide array are output to the flat plate area; the slab region comprises a substrate layer, a core layer and a cladding layer which are arranged in a stacked manner, and an angle expansion structure is arranged at the other end of the slab region relative to the phased waveguide array; the angle expansion structure is an optical structure capable of changing the propagation path of incident light. By adding an on-chip lens or grating structure in the one-dimensional phase control chip output flat area, the scanning angle range is enlarged, the working performance of the chip is improved, and meanwhile, the structure is compact, and the device has the advantage of high reliability. Compared with the prior art, the scheme of combining a plurality of chips to expand the angle reduces the complexity, the control difficulty and the cost of the system. The invention is beneficial to miniaturization of chip, and makes assembling process simpler, and increases reliability of system.
Description
Technical Field
The invention relates to the technical field of optical phased arrays, in particular to an integrated optical phased array chip.
Background
The laser radar realizes detection of distance or morphology by emitting scanning laser beams and receiving reflected echoes, and has wide application in the fields of unmanned aerial vehicles, automatic driving, environmental monitoring and the like. Common schemes for laser radar to achieve beam scanning include mechanical rotation, microelectromechanical systems, and optical phased arrays.
The optical phased array technology is characterized in that specific phase difference is generated between array waveguides through a modulation mode, rotation of a beam angle is achieved, and compared with mechanical rotation and MEMS (micro-electromechanical system) beam scanning schemes, the optical phased array radar has the advantages of being free of rotating elements, high in scanning speed, large in scanning range, high in integration level, high in reliability, low in cost and the like.
The principle of realizing the phase modulation of the optical phased array waveguide comprises the electro-optic effect of materials such as liquid crystal, lead lanthanum titanate ceramics, lithium niobate and the like, the thermo-optic effect of a silicon-based integrated optical chip and the like. The silicon-based integrated optical chip is compatible with a semiconductor CMOS process, can realize on-chip integration of the light source detector, and has compact structure and low cost. Therefore, the phased array laser radar based on the silicon-based integrated optical chip has a great application prospect.
The beam scanning angle range is one of the important performance parameters of the lidar. For an optical phased array, the scan angle range of the output beam is mainly affected by the spacing between the output units. The smaller the output cell pitch, the larger the scan angle range. However, other performance parameters of the output beam, such as beam divergence angle, and sidelobe suppression ratio are also affected by the output cell pitch, which decreases, resulting in an increase in beam divergence angle, an increase in crosstalk between adjacent waveguides, and degradation of sidelobe suppression ratio. Therefore, for an integrated optical phased array chip, while increasing the single chip scan angle range, it is necessary to increase the number of channels in order to ensure that the divergence angle is unchanged. In view of this, chinese patent publication No. CN106575017a describes an optical phased array chip for planar beamforming and steering and a method of using the same. By arranging a plurality of optical phased array chips, the number of channels is increased, and the angle is further expanded.
However, it still has the following drawbacks: the adoption of the large-scale dense phase control unit makes the chip structure and the modulation circuit more complex; meanwhile, in order to reduce crosstalk between waveguides, high-contrast waveguides are required to be adopted, and requirements on processing accuracy of chips are further increased. The scheme of combining a plurality of chips to expand the angle is adopted, so that the complexity, the control difficulty and the cost of the system are increased.
Disclosure of Invention
Therefore, in order to overcome the problems that the circuit complexity and the system control difficulty are increased by adopting a large-scale dense phased array unit to expand the angle of the optical phased array in the prior art, the integrated optical phased array chip is provided.
The design scheme of the invention is as follows:
an integrated optical phased array chip comprises a flat plate area arranged on one side of a phased waveguide array, wherein light beams of the phased waveguide array are output to the flat plate area; the slab region comprises a substrate layer, a core layer and a cladding layer which are arranged in a stacked manner, and an angle expansion structure is arranged at the other end of the slab region relative to the phased waveguide array; the angle expansion structure is an optical structure capable of changing the propagation path of incident light.
Preferably, the angle expansion structure is a concave lens or a convex lens.
Preferably, the angle expansion structure is a curved surface structure formed at the end of the cladding layer and the core layer away from the phased waveguide array.
Preferably, the angle-expanding structure is a mirror.
Preferably, the angle-expanding structure comprises a bevel etched at an end of the cladding and core layers remote from the phased waveguide array and a high reflectivity metal deposited on the bevel.
Preferably, the angle expansion structure is a grating structure.
Preferably, the grating structure is a periodic structure etched on the core layer.
Preferably, the substrate layer is a flat plate structure; the core layer is of a flat plate structure made of light-transmitting materials; the cladding is of a flat plate structure made of a light-transmitting material, is arranged between the substrate layer and the core layer, and has a refractive index smaller than that of the core layer.
Preferably, the substrate layer and the core layer are monocrystalline silicon, and the cladding layer is silicon dioxide.
Preferably, the length of the flat plate area in the propagation direction of the light beam is 0.1-6mm.
The technical scheme of the invention has the following advantages:
1. the invention provides an integrated optical phased array chip, which comprises a flat plate area arranged at one side of a phased waveguide array, wherein light beams of the phased waveguide array are output to the flat plate area; the slab region comprises a substrate layer, a core layer and a cladding layer which are arranged in a stacked manner, and an angle expansion structure is arranged at the other end of the slab region relative to the phased waveguide array; the angle expansion structure is an optical structure capable of changing the propagation path of incident light. By adding an on-chip lens or grating structure in the one-dimensional phase control chip output flat area, the scanning angle range is enlarged, the working performance of the chip is improved, and meanwhile, the structure is compact, and the device has the advantage of high reliability. Compared with the prior art, the invention adopts a scheme of combining a plurality of chips to expand the angle, and reduces the complexity, the control difficulty and the cost of the system. Compared with the scheme of using an off-chip grating or a lens to control the scanning angle in the prior art, the invention is beneficial to miniaturization of the chip, simplifies the assembly process and increases the reliability of the system.
2. The invention provides an integrated optical phased array chip, and the angle expansion structure can take different forms, such as a concave lens or a convex lens, a reflecting mirror or a grating structure and the like.
3. When the angle expansion structure is a lens, the lens is realized by a curved flat plate area-air interface, and light beams are refracted at the interface. By designing the interface shape to change the angle of incidence, the angular deflection of the beam can be changed. Because the effective refractive index of the flat plate area is higher than that of air, when the curved surface is concave (R <0, the circle center and the waveguide array are positioned on two sides of the curved surface), the refractive angle can be increased relative to the plane or the protruding surface structure with the refractive angle being more than or equal to 0, and the angle expansion effect is realized;
4. when the angle expansion structure is a reflecting mirror, the reflecting mirror is realized by etching a cladding layer and the core layer at the tail end of a flat plate area into inclined planes and depositing high-reflectivity metal, and light beams are reflected at a metal interface. By designing the inclination angle of the reflecting mirror, the incident angle is changed, and the emergent angle of the reflected light beam can be changed. When the inclination angle of the reflecting mirror is changed from 30 degrees to 60 degrees, the corresponding scanning angle range is +/-30 degrees, and the larger scanning angle can be realized by expanding the inclination angle range of the reflecting mirror.
5. When the angle expansion structure is a grating, the grating is realized by etching a periodic structure on a core layer of a flat plate area, the diffraction angle of the grating is determined by the period length, and the diffraction angle and the diffraction intensity of a light beam can be changed by designing the period length and the duty ratio parameters, so that the diffraction angle is changed between 0 and 180 degrees.
6. The invention provides an integrated optical phased array chip, wherein a substrate layer is of a flat plate structure; the core layer is of a flat plate structure made of light-transmitting materials; the cladding layer is of a flat plate structure made of a light-transmitting material, is arranged between the substrate layer and the core layer, and has a refractive index smaller than that of the core layer, so that scattering of light into the cladding layer is reduced, and the light propagates in the core layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of an integrated optical phased array angle expansion device (lens) structure of the present invention;
FIG. 2 is a side view of the integrated optical phased array angle expansion device (lens) structure of the invention;
FIG. 3 is a top view of an integrated optical phased array angle expansion device (mirror) structure of the invention;
FIG. 4 is a side view of the integrated optical phased array angle expansion device (mirror) structure of the invention;
FIG. 5 is a top view of an integrated optical phased array angle expansion device (grating) structure of the invention;
fig. 6 is a side view of an integrated optical phased array angle expansion device (grating) structure of the invention.
Reference numerals illustrate:
1-a phased waveguide array; 2-plate region; 3-a substrate layer; 4-a core layer; 5-cladding; 6-concave lens; 7-a mirror; 8-grating structure.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention provides an integrated optical phased array chip, which comprises a flat plate area 2 arranged on one side of a phased waveguide array 1, wherein light beams of the phased waveguide array 1 are output to the flat plate area 2. The slab region 2 comprises a substrate layer 3, a core layer 4 and a cladding layer 5 which are arranged in a stacked manner, an angle expansion structure is arranged relative to the other end of the phased waveguide array 1, the length of the slab region 2 in the light beam propagation direction is 0.1-6mm, the length of the slab region 2 is changed, the size and the spatial position change rate of the angle expansion structure can be changed, and the length of the slab region 2 can be optimized according to design and preparation process conditions. The substrate layer 3 is of a flat plate structure, and the core layer 4 is of a flat plate structure made of a light-transmitting material; the cladding layer 5 is a flat plate structure made of a light-transmitting material, and is arranged between the substrate layer 3 and the core layer 4, and the refractive index of the cladding layer 5 is smaller than that of the core layer 4, so that the scattering of light into the cladding layer 5 is reduced, and the light propagates in the core layer 4. The substrate layer 3 and the core layer 4 are monocrystalline silicon, and the cladding layer 5 is silicon dioxide.
As shown in fig. 1 and 2, the angle expansion structure is a concave lens 6 or a convex lens, and can change the optical structure of the propagation path of the incident light, and the angle expansion structure is a curved surface structure formed at the end of the cladding layer 5 and the core layer 4 away from the phased waveguide array 1. By designing the interface shape to change the angle of incidence, the angular deflection of the beam can be changed. The purpose of angle deflection can also be achieved by using convex lenses. Because the effective refractive index of the flat plate region 2 is higher than that of air, when the curved surface is concave R <0, and the circle center and the waveguide array are positioned on two sides of the curved surface, the refractive angle can be increased relative to a plane or a protruding surface structure with R being more than or equal to 0, and the angle expansion effect is realized.
In this embodiment, the number of phased array waveguide channels is 16, the thickness of the core layer 4 is 220nm, the width is 0.5um, the distance is 5um, the width of the main peak angle is 1 degree, the scanning angle corresponding to pi phase shift is about + -18 degrees in air, and + -6 degrees are in the flat plate region 2; the adopted angle expansion structure is a lens structure, and the length of the flat plate area 2 is 2mm; the effective refractive index of the slab region 2 is about 2.8, and the incidence of the corresponding total reflection angle is about 21 degrees; in the pi phase shift case, θ0=6 degrees, and θ1=15 degrees are set by the lens curved surface design, θ2=46 degrees, and at this time, the maximum deflection angle θ0+θ2—θ1=37 degrees, and the scanning angle is increased by one time from 18 degrees to 37 degrees compared with the case where the output end face is a plane. The performance parameters of the chip, namely the width of the main peak is 1 degree, and the scanning angle is 37 degrees, if the chip is not realized by adopting the angle expansion device provided by the invention, the waveguide spacing is required to be 2.5um, the number of channels is 32, and the structural complexity and the modulation difficulty of the chip are doubled. The invention provides an on-chip angle expansion structure of an integrated optical phased array chip aiming at the problems, which expands the scanning angle range by adding an on-chip lens or grating structure 8 in a one-dimensional phased array chip output flat area 2, improves the working performance of the chip, and has the advantages of compact structure and high reliability.
As another embodiment, as shown in fig. 3 and 4, the angle expansion structure is a mirror 7. The angle expansion structure comprises an inclined plane etched at the end of the cladding layer 5 and the core layer 4 far away from the phased waveguide array 1 and high reflectivity metal deposited on the inclined plane. The light beam is reflected at the metal interface. By designing the inclination angle of the reflecting mirror 7, the outgoing angle of the reflected light beam can be changed by changing the incident angle. When the tilt angle of the mirror 7 is changed from 30 degrees to 60 degrees, the corresponding scanning angle range is ±30 degrees, and a larger scanning angle can be achieved by expanding the tilt angle range of the mirror 7.
As another embodiment, as shown in fig. 5 and 6, the angle-expanding structure is a grating structure 8. The grating structure 8 is a periodic structure etched on the core layer 4. The diffraction angle of the grating is determined by the period length, and the diffraction angle and diffraction intensity of the light beam can be changed by designing the period length and the duty ratio parameters, so that the diffraction angle is changed between 0 and 180 degrees.
The beam scanning angle range is one of the important performance parameters of the lidar. For an optical phased array, the scan angle range of the output beam is mainly affected by the spacing between the output units. The smaller the output cell pitch, the larger the scan angle range. However, other performance parameters of the output beam, such as beam divergence angle, and sidelobe suppression ratio are also affected by the output cell pitch, which decreases, resulting in an increase in beam divergence angle, an increase in crosstalk between adjacent waveguides, and degradation of sidelobe suppression ratio. Therefore, in the prior art, for an integrated optical phased array chip, in order to ensure that the divergence angle is unchanged while the scanning angle range of a single chip is improved, the number of channels is increased, and a large-scale dense phase control unit is adopted, so that the chip structure and a modulation circuit are more complex; meanwhile, in order to reduce crosstalk between waveguides, high-contrast waveguides are required to be adopted, and requirements on processing accuracy of chips are further increased. The scheme of combining a plurality of chips to expand the angle is adopted, so that the complexity, the control difficulty and the cost of the system are increased. The scheme of controlling the scanning angle by the off-chip grating or the lens is not beneficial to miniaturization of the chip, so that the assembly process is more complicated, and meanwhile, the reliability of the system is reduced.
It should be noted that the materials of the substrate layer 3, the cladding layer 5, and the core layer 4 are not limited to the materials given in the present embodiment, and may be other materials.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (4)
1. An integrated optical phased array chip, characterized in that: the device comprises a flat plate area (2) arranged at one side of a phase control waveguide array (1), wherein light beams of the phase control waveguide array (1) are output to the flat plate area (2); the slab region (2) comprises a substrate layer (3), a core layer (4) and a cladding layer (5) which are arranged in a stacked manner, and an angle expansion structure is arranged at the other end of the slab region relative to the phased waveguide array (1); the angle expansion structure is an optical structure capable of changing the propagation path of incident light;
the angle expansion structure is a concave lens (6) or a convex lens;
the angle expansion structure is a curved surface structure formed at the end parts of the cladding (5) and the core layer (4) far away from the phased waveguide array (1);
the angle expansion structure is a reflecting mirror (7);
the angle expansion structure comprises an inclined plane etched at the end part of the cladding layer (5) and the core layer (4) far away from the phased waveguide array (1) and high-reflectivity metal deposited on the inclined plane;
the angle expansion structure is a grating structure (8);
the grating structure (8) is a periodic structure etched on the core layer (4).
2. The integrated optical phased array chip of claim 1, characterized in that the substrate layer (3) is a planar structure; the core layer (4) is of a flat plate structure made of light-transmitting materials; the cladding layer (5) is of a flat plate structure made of a light-transmitting material, is arranged between the substrate layer (3) and the core layer (4), and has a refractive index smaller than that of the core layer (4).
3. An integrated optical phased array chip as claimed in claim 2, characterised in that the substrate layer (3) and the core layer (4) are of monocrystalline silicon and the cladding layer (5) is of silicon dioxide.
4. An integrated optical phased array chip as claimed in claim 1, characterised in that the slab region (2) has a length in the beam propagation direction of 0.1-6mm.
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| CN111913165B (en) * | 2019-05-08 | 2024-07-05 | 宁波舜宇车载光学技术有限公司 | Detection system and detection method thereof |
| CN110044394A (en) * | 2019-05-08 | 2019-07-23 | 浙江大学昆山创新中心 | A kind of novel light wave leads phase-array scanning system |
| CN111596405B (en) * | 2020-06-12 | 2021-07-06 | 吉林大学 | Optical waveguide and laser radar |
| CN112630884B (en) * | 2020-12-22 | 2023-09-08 | 联合微电子中心有限责任公司 | Waveguide grating antenna array for optical phased array and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108398842A (en) * | 2018-04-18 | 2018-08-14 | 中国科学院西安光学精密机械研究所 | Optical phased array chip based on serial optical antenna |
| CN209746121U (en) * | 2018-12-29 | 2019-12-06 | 国科光芯(海宁)科技股份有限公司 | integrated optical phased array chip |
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| EP3423884A4 (en) * | 2016-03-02 | 2019-11-20 | The Government of the United States of America as represented by the Secretary of the Navy | Chip-scale two-dimensionai optical phased array with simplified controls |
| US20180120422A1 (en) * | 2016-11-03 | 2018-05-03 | Quanergy Systems, Inc. | Low cost and compact optical phased array with electro-optic beam steering |
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| CN108398842A (en) * | 2018-04-18 | 2018-08-14 | 中国科学院西安光学精密机械研究所 | Optical phased array chip based on serial optical antenna |
| CN209746121U (en) * | 2018-12-29 | 2019-12-06 | 国科光芯(海宁)科技股份有限公司 | integrated optical phased array chip |
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Effective date of registration: 20191014 Address after: 314400 building 4, No.17 Caohejing Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Applicant after: Guoke optical core (Haining) Technology Co.,Ltd. Address before: Room 339, room 62, West Street, Drum Tower, Xicheng District, Beijing, Beijing Applicant before: CHINA SCIENCE SKY CHIP TECHNOLOGY (BEIJING) CO.,LTD. |
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