CN109545865A - 一种金颗粒增强型石墨烯光探测器及制备方法 - Google Patents
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Abstract
一种金颗粒增强型石墨烯光探测器及制备方法，石墨烯光探测器包括SiO2‑Si衬底，SiO2‑Si衬底表面中部吸附有若干金颗粒，在吸附有金颗粒的衬底的表面部分上覆盖有石墨烯，在石墨烯表面的两端分别设置有金属电极。石墨烯光探测器的制作方法，包括：清洗衬底；制作金颗粒；金颗粒转移；石墨烯转移；光刻并通过氧离子刻蚀实现石墨烯图形化；制作金属电极。本发明的一种金颗粒增强型石墨烯光探测器及制备方法，采用金膜超声的方式制作金颗粒，简化金颗粒制作工艺，降低实验难度和成本；通过石墨烯覆盖金颗粒，制作复合型探测沟道，增强光吸收，提高石墨烯光探测器的探测效率。
Description
技术领域
本发明涉及一种光探测器。特别是涉及一种金颗粒增强型石墨烯光探测器及制备方法。
背景技术
石墨烯作为一种二维薄膜材料，具有迁移率高、导热性强、柔韧性好、高透明度等优良特性，自被发现以来，迅速成为光电子领域的研究热点，也被期望成为未来的发展方向之一。石墨烯具有很高的光学损伤阈值和非线性系数，虽然热导率高，但相对于传统半导体材料，其本身对温度不敏感。石墨烯的光学特性，如可在很宽的频率范围内实现光吸收，可被应用于很宽的光谱范围内，如新型太赫兹器件到光电子器件。石墨烯是零带隙材料，可通过掺杂和电压来调节费米能级，以实现不同的应用需求。
石墨烯光探测器从有无偏压的角度，可分为零偏和偏压型光电探测器。零偏光电探测器依据光生电效应，需要石墨烯与不同工作机理的金属接触，形成势垒不同的接触结，当强度相同的入射光照射时，两个结的电势差使结附近的光生载流子产生定向移动，从而产生光电流。零偏结构的石墨烯光电探测器暗电流为零，但通常要求金属间距在亚微米级别，以保证光生电子空穴对不被复合。在偏压型石墨光探测器同时存在热辐射效应和光生电流效应，而光生电流效应起主导作用。当光照射时，石墨烯沟道中产生电子空穴对，在源漏偏压下电子空穴定向移动，产生光电流。偏压型光电探测器能通过控制栅压幅度调节光生电流大小。
虽然石墨烯光探测器在超快光探测领域具有极强的吸引力，但是单层石墨烯的吸收效率仅仅为2.3％，为提高光吸收效率，出现了一些新的增强方法，如：微腔集成石墨烯光电探测器、波导集成石墨烯光探测器、量子点阵列探测器，对增强光吸收都有明显的作用。但是，目前存在的光吸收增强技术，工艺复杂，制作周期长，因此，本发明提出了该新型的金颗粒增强型石墨烯光探测器，利用全新的金颗粒制作工艺，简化了制作流程，提高效率，同时增强石墨烯对光的吸收效率。
针对上述该探测器的优点，可以看出利用此方法对二维材料光探测器的研究十分有意义，运用其技术进行器件制作，可以减小制作成本和难度，缩短探测器制作周期，对光电子科学研究和探测器成品化有重要作用。
发明内容
本发明所要解决的技术问题是，提供一种能够提高石墨烯光探测器的探测效率的金颗粒增强型石墨烯光探测器及制备方法。
本发明所采用的技术方案是：一种金颗粒增强型石墨烯光探测器，包括SiO2-Si衬底，所述SiO2-Si衬底表面中部吸附有若干金颗粒，在吸附有金颗粒的衬底的表面部分上覆盖有石墨烯，在石墨烯表面的两端分别设置有金属电极。
一种金颗粒增强型石墨烯光探测器的制作方法，包括如下步骤：
1)清洗衬底；
2)制作金颗粒；
3)金颗粒转移；
4)石墨烯转移；
5)光刻并通过氧离子刻蚀实现石墨烯图形化；
6)制作金属电极。
步骤1)包括采用高阻SiO2-Si衬底，在衬底上旋涂光刻胶，烘干后利用划片机将衬底裁剪成所用尺寸，清洗。
步骤2)包括：在晶圆上旋涂光刻胶，用热蒸发台在旋涂有光刻胶的晶圆上蒸发20nm以下厚度的金薄膜，将覆盖金薄膜的晶圆放置到丙酮溶液内进行金膜剥离，将剥离下的金膜捞起放入去离子水中的用超声清洗仪超声，利用超声功率将金膜粉碎得到金颗粒去离子水混合液。
步骤3)包括：将制备的金颗粒去离子水混合液倒入烧杯，用清洗干净的衬底在混合液中反复捞洗，使金颗粒吸附在衬底表面，用热板烘干。
本发明的一种金颗粒增强型石墨烯光探测器及制备方法，采用金膜超声的方式制作金颗粒，简化金颗粒制作工艺，降低实验难度和成本；通过石墨烯覆盖金颗粒，制作复合型探测沟道，增强光吸收，提高石墨烯光探测器的探测效率。
附图说明
图1是本发明一种金颗粒增强型石墨烯光探测器的结构示意图；
图2是图1的俯视图。
图中
1：SiO2-Si衬底 2：金颗粒
3：石墨烯 4：金属电极
具体实施方式
下面结合实施例和附图对本发明的一种金颗粒增强型石墨烯光探测器及制备方法做出详细说明。
如图1、图2所示，本发明的一种金颗粒增强型石墨烯光探测器，包括SiO2-Si衬底1，所述SiO2-Si衬底1表面中部吸附有若干金颗粒2，在吸附有金颗粒2的衬底(1)的表面部分上覆盖有石墨烯3，在石墨烯3表面的两端分别设置有金属电极4。
本发明的一种金颗粒增强型石墨烯光探测器的制作方法，包括如下步骤：
1)清洗衬底；
采用高阻SiO2-Si衬底，衬底采用高阻硅，减少衬底寄生电容。在衬底上旋涂光刻胶，减小划片过程中的杂质离子污染，烘干后利用划片机将衬底裁剪成所用尺寸，再用丙酮去除表面光刻胶保护层，然后进行超声清理：将衬底转移至装有丙酮的烧杯，放入超声清洗机，以50％功率超声清洗五分钟，然后依次用乙醇、去离子水按照同样的方法清洗5分钟，清洗完毕，捞出衬底用用氮气吹干。
2)制作金颗粒；包括：
在晶圆上旋涂光刻胶，用热蒸发台在旋涂有光刻胶的晶圆上蒸发20nm以下厚度的金薄膜，将覆盖金薄膜的晶圆放置到丙酮溶液内进行金膜剥离，将剥离下的金膜捞起放入去离子水中的用超声清洗仪超声，利用超声功率将金膜粉碎得到金颗粒去离子水混合液。
3)金颗粒转移；包括：
将制备的金颗粒去离子水混合液倒入烧杯，用清洗干净的衬底在混合液中反复捞洗，使金颗粒吸附在衬底表面，用热板烘干。
4)石墨烯转移；包括：
将制备的金颗粒-去离子水混合液倒入烧杯，用清洗干净的衬底在混合液中反复捞洗，使金颗粒吸附在衬底表面，用热板烘干。
5)光刻并通过氧离子刻蚀实现石墨烯图形化；包括：
对含有石墨烯的衬底光刻，旋涂正胶保护石墨烯沟道区域，用氧离子去胶机去除沟道区域以外的石墨烯薄膜，将衬底放置丙酮溶液去除图形区域覆盖的光刻胶。
6)制作金属电极；包括：
对含有石墨烯图形的衬底进行光刻，然后蒸发钛金，进行金属剥离，形成金属电极。
Claims (5)
1.一种金颗粒增强型石墨烯光探测器，包括SiO2-Si衬底(1)，其特征在于，所述SiO2-Si衬底(1)表面中部吸附有若干金颗粒(2)，在吸附有金颗粒(2)的衬底(1)的表面部分上覆盖有石墨烯(3)，在石墨烯(3)表面的两端分别设置有金属电极(4)。
2.一种权利要求1所述的金颗粒增强型石墨烯光探测器的制作方法，其特征在于，包括如下步骤：
1)清洗衬底；
2)制作金颗粒；
3)金颗粒转移；
4)石墨烯转移；
5)光刻并通过氧离子刻蚀实现石墨烯图形化；
6)制作金属电极。
3.根据权利要求2所述的金颗粒增强型石墨烯光探测器的制作方法，其特征在于，步骤1)包括采用高阻SiO2-Si衬底，在衬底上旋涂光刻胶，烘干后利用划片机将衬底裁剪成所用尺寸，清洗。
4.根据权利要求2所述的金颗粒增强型石墨烯光探测器的制作方法，其特征在于，步骤2)包括：在晶圆上旋涂光刻胶，用热蒸发台在旋涂有光刻胶的晶圆上蒸发20nm以下厚度的金薄膜，将覆盖金薄膜的晶圆放置到丙酮溶液内进行金膜剥离，将剥离下的金膜捞起放入去离子水中的用超声清洗仪超声，利用超声功率将金膜粉碎得到金颗粒去离子水混合液。
5.根据权利要求2所述的金颗粒增强型石墨烯光探测器的制作方法，其特征在于，步骤3)包括：将制备的金颗粒去离子水混合液倒入烧杯，用清洗干净的衬底在混合液中反复捞洗，使金颗粒吸附在衬底表面，用热板烘干。
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