CN109545797B - 基于柔性衬底的柔性二输入或非逻辑门电路 - Google Patents

基于柔性衬底的柔性二输入或非逻辑门电路 Download PDF

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CN109545797B
CN109545797B CN201811209701.0A CN201811209701A CN109545797B CN 109545797 B CN109545797 B CN 109545797B CN 201811209701 A CN201811209701 A CN 201811209701A CN 109545797 B CN109545797 B CN 109545797B
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秦国轩
赵政
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Tianjin University
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors

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Abstract

本发明涉及的柔性二输入或非逻辑门电路适用于柔性集成电路，为实现对二输入信号进行或非逻辑操作。并且该器件具有结构轻薄、可弯曲折叠，抗机械冲击能力强等优点，适用于在空间受限情况下的输入信号或非逻辑运算，本发明，基于柔性衬底的柔性二输入或非逻辑门电路，结构如下：衬底包括聚对苯二甲酸乙二醇PET塑料基板和基于环氧SU8树脂的光刻胶粘合层，用来支撑柔性薄膜晶体管和柔性电阻，柔性二输入或非逻辑门电路制作在PET塑料基板上，在PET塑料上表面有一层SU8材料层，作为PET基板与逻辑门电路之间的粘合层，逻辑门电路的主体部分包括2个柔性薄膜晶体管和3个柔性电阻。本发明主要应用于柔性集成电路设计制造。

Description

基于柔性衬底的柔性二输入或非逻辑门电路
技术领域
本发明涉及的柔性二输入或非逻辑门电路适用于柔性集成电路，主要包含柔性薄膜晶体管和柔性电阻。
背景技术
柔性电子是将有机、无机材料电子器件制作在柔性、可延性塑料或薄金属基板上的新兴电子科技，在信息、能源、医疗、国防等领域都具有广泛应用。如印刷射频识别标签RFID、电子用表面粘贴、有机发光二极管OLED、柔性电子显示器等。同传统的半导体工艺技术一样，柔性电子技术也可以应用于集成电路的制造。并且通过柔性电子技术制作出的柔性集成电路具有可弯曲折叠，空间适应能力强等传统集成电路难以匹及的优点，具有巨大的发展潜力。然而当前研究人员只将目光投向柔性衬底材料，柔性器件材料和柔性器件尺寸上，并未在柔性二输入或非逻辑门电路这样基础集成电路的设计制造上有所精进。
发明内容
为克服现有技术的不足，本发明旨在提出柔性二输入或非逻辑门电路设计，实现对二输入信号进行或非逻辑操作。并且该二输入或非逻辑门电路中的柔性器件具有结构轻薄、可弯曲折叠，抗机械冲击能力强等优点，适用于在空间受限情况下的输入信号或非逻辑运算。为此，本发明采用的技术方案是，基于柔性衬底的柔性二输入或非逻辑门电路，结构如下：衬底包括聚对苯二甲酸乙二醇PET塑料基板和基于环氧SU8树脂的光刻胶粘合层，用来支撑柔性薄膜晶体管和柔性电阻，柔性二输入或非逻辑门电路制作在PET塑料基板上，在PET塑料上表面有一层SU8材料层，作为PET基板与逻辑门电路之间的粘合层，逻辑门电路的主体部分包括2个柔性薄膜晶体管和3个柔性电阻，柔性薄膜晶体管制作在N型Si薄膜上，由三个P掺杂区和两个栅氧层组成；柔性电阻通过对硅薄膜掺杂制作而成，其中两个薄膜晶体管的连接方式为一个薄膜晶体管的源端连接电源，其漏端连接第二个薄膜晶体管的源端，第二个薄膜晶体管的漏端做信号输出端，并通过一个柔性电阻同接地端连接，两个薄膜晶体管TFT器件的栅极各通过一个柔性电阻同信号输入端连接，金属互连线只同柔性电阻的边缘接触。
基板为不锈钢衬底，超薄玻璃衬底，纸质衬底中的一种，形成具备可弯曲折叠的柔性衬底。
本发明的特点及有益效果是：
本发明设计的柔性二输入或非逻辑门电路只需将输入信号分别接到输入端口上便可以实现对输入信号的或非运算，运算结果通过输出端口进行输出。为应对不同的使用场景，本发明中柔性薄膜晶体管具有不同的沟道长宽，柔性电阻也具有不同的掺杂浓度和尺寸，从而使得所设计的柔性二输入或非逻辑门电路拥有广阔的应用前景。
附图说明：
附图中示出本发明的实施例。其中：
图1示出基于柔性衬底的柔性二输入或非逻辑门电路俯视图；
标记如下：1为供电端，2为金属连线，3、5、11为柔性电阻，4、10为信号输入端口，6、9、13为单晶硅薄膜P型掺杂区，7为信号输出端口，8、12为栅氧层，14为接地端。
图2示出柔性电阻(1)和柔性薄膜晶体管(2)的截面示意图；
标记如下：17为PET，16为SU-8材料，15为N型Si薄膜未掺杂区。
具体实施方式
本发明解决的技术问题在于利用所设计的基于柔性衬底的柔性二输入或非逻辑门电路可以实现对二输入信号进行或非逻辑操作。并且该二输入或非逻辑门电路中的柔性器件具有结构轻薄、可弯曲折叠，抗机械冲击能力强等优点，适用于在空间受限情况下的输入信号或非逻辑运算。因为或非逻辑门电路是集成电路设计制造的核心电路之一，所以本发明设计的基于柔性衬底的柔性二输入或非逻辑门电路具有巨大的发展空间，可以进行大规模的推广使用。
依据本发明，该技术问题通过一种基于柔性衬底(PET衬底，不锈钢衬底，超薄玻璃衬底，纸质衬底等具有弯曲折叠特性的柔性衬底)的柔性二输入或非逻辑门电路来解决。在对柔性薄膜晶体管的前期研究中发现该器件的IV特性，CV特性等电学特性与器件的沟道长度，宽度有对应关系，利用这些特性可以建立起相应的分析模型，从而可以实现对输入信号强度不等时器件尺寸的选择。同时，前期研究中也发现通过对硅薄膜进行掺杂以及翻转转移技术制作的柔性电阻具有同普通硬质电阻相同的特性。从而，可以使用柔性薄膜晶体管和柔性电阻制作柔性二输入或非逻辑门电路。
本发明设计的柔性二输入或非逻辑门电路只需将输入信号分别接到输入端口上便可以实现对输入信号的或非运算，运算结果通过输出端口进行输出。为应对不同的使用场景，本发明中柔性薄膜晶体管具有不同的沟道长宽，柔性电阻也具有不同的掺杂浓度和尺寸，从而使得所设计的柔性二输入或非逻辑门电路拥有广阔的应用前景。
下面结合附图和具体实施方式进一步详细说明本发明。
图1示出基于柔性衬底的柔性二输入或非逻辑门电路俯视图以及柔性电阻和柔性TFT器件的截面图，包括三个柔性电阻，两个柔性薄膜晶体管以及若干互联线，使用时1接电源，14接地，4和10作为信号的输入端口。二输入信号经过或非逻辑运算后的输出信号从7输出。
就器件结构而言，衬底包括PET塑料基板17和SU8粘合层16，用来支撑柔性薄膜晶体管和柔性电阻。柔性二输入或非逻辑门电路制作在PET塑料基板17(其他类型普通塑料、柔性材料都可以作为衬底基材)上，在PET塑料上表面有一层SU8材料层16，作为PET基板与逻辑门电路之间的粘合层。逻辑门电路的主体部分包括2个柔性薄膜晶体管和3个柔性电阻。柔性薄膜晶体管制作在N型Si薄膜上，由：P掺杂区(6,9,13)和栅氧层(8,12)组成，其中P掺杂区6,9和栅氧层8构成一个薄膜晶体管，6做源极，9做漏极，P掺杂区9,13和栅氧层12构成另一个薄膜晶体管，此时9做源极，13做栅极。柔性电阻通过对硅薄膜掺杂制作而成。其中两个TFT器件的连接方式为一个TFT的源端连接电源，其漏端连接第二个TFT的源端。第二个TFT的漏端做信号输出端，并通过一个柔性电阻同接地端连接。两个TFT器件的栅极各通过一个柔性电阻同信号输入端连接。金属互连线只同柔性电阻的边缘接触。
本发明设计的基于柔性衬底的柔性二输入或非逻辑门电路可以对二输入信号进行或非逻辑运算。该二输入或非逻辑门电路可应用于空间受限的柔性集成电路工作区域，也可以应用于智能穿戴上。

Claims (2)

1.一种基于柔性衬底的柔性二输入或非逻辑门电路，其特征是，结构如下：衬底包括聚对苯二甲酸乙二醇PET塑料基板和基于环氧SU8树脂的光刻胶粘合层，用来支撑柔性薄膜晶体管和柔性电阻，柔性二输入或非逻辑门电路制作在PET塑料基板上，在PET塑料上表面有一层SU8材料层，作为PET基板与逻辑门电路之间的粘合层，逻辑门电路的主体部分包括2个柔性薄膜晶体管和3个柔性电阻，柔性薄膜晶体管制作在N型Si薄膜上，由三个P掺杂区和两个栅氧层组成；柔性电阻通过对硅薄膜掺杂制作而成，其中两个薄膜晶体管的连接方式为一个薄膜晶体管的源端连接电源，其漏端连接第二个薄膜晶体管的源端，第二个薄膜晶体管的漏端做信号输出端，并通过一个柔性电阻同接地端连接，两个薄膜晶体管TFT器件的栅极各通过一个柔性电阻同信号输入端连接，金属互连线只同柔性电阻的边缘接触。
2.如权利要求1所述的基于柔性衬底的柔性二输入或非逻辑门电路，其特征是，聚对苯二甲酸乙二醇PET塑料基板可采用不锈钢，超薄玻璃，纸质中的一种替换，其上布设基于环氧SU8树脂的光刻胶粘合层，形成具备可弯曲折叠的柔性衬底。
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