CN109545741B - Method for filling groove structure with tungsten - Google Patents
Method for filling groove structure with tungsten Download PDFInfo
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- CN109545741B CN109545741B CN201811476989.8A CN201811476989A CN109545741B CN 109545741 B CN109545741 B CN 109545741B CN 201811476989 A CN201811476989 A CN 201811476989A CN 109545741 B CN109545741 B CN 109545741B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
Abstract
The invention discloses a method for filling a groove structure with tungsten, which comprises the following steps: step one, forming a first groove in the first dielectric layer. And step two, forming a first barrier layer. And step three, carrying out a first tungsten deposition and chemical mechanical polishing process to form a first tungsten layer. And step four, forming a second dielectric layer. And step five, forming a second groove superposed right above the first groove. And step six, forming a second barrier layer. And seventhly, removing the second barrier layer on the bottom surface of the second groove and the outer surface of the second groove. And step eight, performing second tungsten deposition from the bottom to the top to form a second tungsten layer. The invention can realize seamless filling of tungsten and improve the quality of the tungsten filled groove structure.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for filling a trench structure with tungsten.
Background
In semiconductor integrated circuits, both contact holes and vias are typically implemented using tungsten plugs, which are tungsten metal structures formed by filling trenches with tungsten. In the prior art, the method for filling the groove structure with tungsten is to form a corresponding groove in a corresponding dielectric layer at one time, wherein the depth of the groove is consistent with that of a required contact hole or through hole; and then forming a barrier layer on the inner side surface of the groove, and then performing tungsten deposition in the groove to fill the groove. However, in the conventional method, the tungsten deposition is a conformal deposition growth (conformal growth) which grows from the side surface and the bottom surface of the groove, and the deposition is performed along the surface shape of the groove, which is very disadvantageous for filling the groove because the tungsten growth is performed on the side surface of the groove, because the tungsten grown from the side surface is easily closed at the top of the groove, and thus a gap is formed inside the groove. Such gaps are easily exposed to void formation during subsequent tungsten Chemical Mechanical Polishing (CMP), which ultimately affects the performance of the tungsten metal structure. Particularly, as the process advances, the process node is lower, the size of the contact hole or the through hole is smaller, the aspect ratio is lower, and finally, a gap is more easily generated in the groove. In semiconductor integrated circuits, particularly in memory areas, it becomes important to achieve seamless groove filling.
Disclosure of Invention
The invention aims to provide a method for filling a groove structure with tungsten, which can realize seamless filling of tungsten and improve the quality of the groove structure filled with tungsten.
In order to solve the technical problem, the method for filling the groove structure with tungsten provided by the invention comprises the following steps:
step one, forming a first groove in the first dielectric layer.
And step two, forming a first barrier layer, wherein the first barrier layer is formed on the bottom surface and the side surface of the first groove and extends to the surface outside the first groove.
And step three, carrying out a first tungsten deposition and chemical mechanical polishing process to form a first tungsten layer, wherein the first tungsten layer completely fills the first groove and is flush with the surface of the first groove.
And fourthly, forming a second dielectric layer on the surface of the first dielectric layer on which the first tungsten layer is formed.
And fifthly, forming a second groove penetrating through the second dielectric layer in the second dielectric layer, wherein the width of the bottom of the second groove is smaller than that of the top of the first groove, the second groove is superposed right above the first groove, and the surface of the first tungsten layer is exposed from the surface of the bottom of the second groove.
And step six, forming a second barrier layer, wherein the second barrier layer is formed on the side surface and the bottom surface of the second groove and outside the second groove.
And seventhly, removing the second barrier layer on the bottom surface of the second groove and the outer surface of the second groove, reserving the second barrier layer on the side surface of the second groove, and only exposing the surface of the first tungsten layer on the bottom surface of the second groove.
Eighthly, carrying out second tungsten deposition to form a second tungsten layer, and overlapping the first tungsten layer and the second tungsten layer to form a tungsten metal structure; and the characteristic that the first tungsten layer is only exposed on the bottom surface of the second groove is utilized to ensure that the deposition mode of the second tungsten deposition is from bottom to top, the capability of filling the groove of the second tungsten deposition is improved by utilizing the deposition from bottom to top, the gap generated by filling is eliminated, and the aspect ratio of the second groove is improved.
In a further improvement, the first barrier layer is a stack of Ti and TiN.
The further improvement is that the second barrier layer is a superposed layer of Ti and TiN; or the second barrier layer is a TiN single layer.
In a further refinement, the first tungsten deposition is deposited in a conformal deposition that grows simultaneously from the bottom surface and the sides of the first recess.
In a further refinement, the depth of the first recess is less than 1/3 of the depth of the second recess.
A further improvement is that, in the fourth step, after the second dielectric layer is formed, a step of forming a metal hard mask layer on the surface of the second dielectric layer is further included.
In a further refinement, the second barrier layer extends to a surface of the metal hard mask layer outside the second recess in step six, and the second barrier layer is removed from an outer surface of the second recess in step seven while stopping on the metal hard mask layer.
In a further improvement, the thickness requirement of the metal hard mask layer after the completion of the seventh step is greater than
In a further improvement, the metal hard mask layer is made of TiN.
In a further improvement, in the seventh step, an Ar etching process is used to remove the second barrier layer on the bottom surface of the second groove and the outer surface of the second groove.
In a further improvement, the first tungsten deposition is preceded by the step of growing a nucleation layer on which the first tungsten layer is formed; and growing the second tungsten deposition by using a nucleation layer.
In a further improvement, the nucleation layer is formed by adopting an atomic layer deposition process, and process gas adopts WF6 plus SiH4 or B2H 6;
the process gases for the second tungsten deposition were H2 and WF 6.
In a further improvement, the third step further comprises performing a fluorine removal process on the first tungsten layer after the chemical mechanical polishing process is completed.
In a further improvement, the defluorination process employs a hydrogen plasma treatment process.
The further improvement is that the tungsten metal structure is a contact hole, and a doped region which needs to be led out is formed in the semiconductor substrate covered by the tungsten metal structure; or the tungsten metal structure is a through hole, and the through hole realizes the connection of the upper metal layer and the lower metal layer. And the first dielectric layer and the second dielectric layer are superposed to form an interlayer film of a corresponding layer.
The method for filling the groove structure with the tungsten is specially arranged, the groove is formed in two steps, the first groove is filled by the first tungsten deposition process which is the same as the prior art, and the depth ratio of the first groove is reduced due to the fact that the depth of the first groove is reduced, so that the first tungsten deposition process can realize seamless filling of the first groove.
According to the invention, on the basis of seamless filling of the first groove, a second dielectric layer and a second groove are formed, the second groove is superposed on the first groove, then a second barrier layer is formed, and the second barrier layer on the bottom surface and the outer surface of the second groove is removed, so that the second barrier layer is only positioned on the side surface of the second groove, and thus, the side surface of the second groove is provided with the second barrier layer, and the bottom surface of the second groove exposes the surface of the first tungsten layer, so that tungsten can only grow upwards from the surface of the first tungsten layer at the bottom when the second tungsten deposition is carried out, and the side surface of the second groove can not carry out tungsten growth, so that the directional deposition of tungsten, namely the deposition from the bottom to the top can be realized, the filling quality of the groove can be improved by the deposition from the top to the top, and the defect of forming a gap in the groove is eliminated; this is because there is no tungsten growth on the side of the second groove, so that the tungsten formed on the side in the prior art will not be closed in advance on the top of the groove, so the invention can avoid forming a gap in the groove, and finally improve the filling quality.
In addition, the second tungsten deposition adopts deposition from the bottom to the top, so that the method can be suitable for filling the second groove with a larger depth-to-width ratio, namely the depth-to-width ratio of the second groove can be improved; in addition, the whole groove is formed by overlapping the first groove and the second groove, so the depth-width ratio of the whole groove can be greatly increased, and the method is suitable for the requirement of continuously reducing process technology nodes.
In addition, the width of the bottom of the second groove is smaller than that of the top of the first groove, so that the bottom surface of the second tungsten layer can not be in direct contact with the surface of the first dielectric layer, the first barrier layer and the second barrier layer can block the whole first tungsten layer and the whole second tungsten layer, and the quality of a tungsten metal structure is guaranteed.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a flow chart of a method for tungsten filling a trench structure according to an embodiment of the present invention;
fig. 2A-2I are device structure diagrams in steps of a method according to an embodiment of the invention.
Detailed Description
FIG. 1 is a flow chart illustrating a method for tungsten filling a trench structure according to an embodiment of the present invention; as shown in fig. 2A to fig. 2I, which are device structure diagrams in the steps of the method according to the embodiment of the present invention, the method for filling a trench structure with tungsten according to the embodiment of the present invention includes the following steps:
step one, as shown in fig. 2A, a first groove 101 is formed in the first dielectric layer 1.
The depth of the first groove 101 is less than 1/3 of the depth of the subsequently formed second groove 102.
Step two, as shown in fig. 2A, a first barrier layer 2 is formed, where the first barrier layer 2 is formed on the bottom surface and the side surface of the first groove 101 and extends to the surface outside the first groove 101.
The first barrier layer 2 is a superimposed layer of Ti and TiN.
And step three, as shown in fig. 2B, performing a first tungsten deposition and chemical mechanical polishing process to form a first tungsten layer 3, as shown in fig. 2C, wherein the first tungsten layer 3 completely fills the first groove 101 and is flush with the surface of the first groove 101.
The first tungsten deposition is preceded by a step of growing a nucleation layer on which the first tungsten layer 3 is formed.
The nucleation layer is formed by adopting an atomic layer deposition process, and process gas adopts WF6 plus SiH4 or B2H 6;
the deposition pattern of the first tungsten deposition employs conformal deposition that grows simultaneously from the bottom surface and the side surfaces of the first groove 101.
As shown in fig. 2D, the chemical mechanical polishing process is further performed to perform a fluorine removal process on the first tungsten layer 3, where the fluorine removal process is represented by an arrow denoted by reference numeral 202 in fig. 2D, and a circle denoted by reference numeral 201 and having an F-shape is denoted by F.
The defluorination process adopts a hydrogen plasma treatment process.
Step four, as shown in fig. 2E, forming a second dielectric layer 4 on the surface of the first dielectric layer 1 on which the first tungsten layer 3 is formed.
In the embodiment of the present invention, after the second dielectric layer 4 is formed, a step of forming a metal hard mask layer 5 on the surface of the second dielectric layer 4 is further included.
Step five, as shown in fig. 2F, a second groove 102 penetrating through the second dielectric layer 4 is formed in the second dielectric layer 4, the bottom width of the second groove 102 is smaller than the top width of the first groove 101, the second groove 102 is overlapped right above the first groove 101, and the bottom surface of the second groove 102 exposes the surface of the first tungsten layer 3.
Step six, as shown in fig. 2G, forming a second barrier layer 6, where the second barrier layer 6 is formed on the side and bottom surfaces of the second groove 102 and outside the second groove 102.
The second barrier layer 6 is a superposed layer of Ti and TiN; alternatively, the second barrier layer 6 is a single TiN layer, that is, in the embodiment of the present invention, the second barrier layer 6 can be a single TiN layer, unlike the first barrier layer 2.
The second barrier layer 6 extends to the surface of the metallic hard mask layer 5 outside the second recess 102.
Seventhly, as shown in fig. 2H, the second barrier layer 6 on the bottom surface of the second groove 102 and the outer surface of the second groove 102 is removed, the second barrier layer 6 on the side surface of the second groove 102 remains, and only the surface of the first tungsten layer 3 on the bottom surface of the second groove 102 is exposed.
The second barrier layer 6 on the outer surface of the second recess 102 is removed stopping on the metal hard mask layer 5.
After step seven, the thickness requirement of the metal hard mask layer 5 is larger than
In the embodiment of the present invention, the metal hard mask layer 5 is made of TiN.
And removing the second barrier layer 6 on the bottom surface of the second groove 102 and the outer surface of the second groove 102 by adopting an Ar etching process.
Eighthly, as shown in fig. 2I, performing second tungsten deposition to form a second tungsten layer 7, and overlapping the first tungsten layer 3 and the second tungsten layer 7 to form a tungsten metal structure; the characteristic that the first tungsten layer 3 is only exposed on the bottom surface of the second groove 102 is utilized to enable the deposition mode of the second tungsten deposition to be deposition from bottom to top, the capability of filling the groove of the second tungsten deposition is improved by deposition from bottom to top, the gap generated by filling is eliminated, and the aspect ratio of the second groove 102 is improved.
And growing the second tungsten deposition by using a nucleation layer.
The process gases for the second tungsten deposition were H2 and WF 6.
The tungsten metal structure is a contact hole, and a doped region needing to be led out is formed in the semiconductor substrate covered by the tungsten metal structure; or the tungsten metal structure is a through hole, and the through hole realizes the connection of the upper metal layer and the lower metal layer. And the first dielectric layer 1 and the second dielectric layer 4 are superposed to form an interlayer film of a corresponding layer.
The method for filling the groove structure with the tungsten is specially arranged, the groove is formed in two steps, the first groove 101 is filled by the first tungsten deposition process which is the same as the existing process, and the depth of the first groove 101 is reduced, so that the depth-to-width ratio of the first groove 101 is reduced, and the first tungsten deposition process can realize seamless filling of the first groove 101.
The embodiment of the invention is based on seamless filling of the first groove 101, then the second dielectric layer 4 and the second groove 102 are formed, the second groove 102 is overlapped on the first groove 101, then the second barrier layer 6 is formed, and the second barrier layer 6 on the bottom surface and the outer surface of the second groove 102 is removed, so that the second barrier layer 6 is only positioned on the side surface of the second groove 102, thus, since the side surfaces of the second groove 102 have the second barrier layer 6 and the bottom surface of the second groove 102 exposes the surface of the first tungsten layer 3, tungsten can grow only upward from the surface of the first tungsten layer 3 at the bottom when the second tungsten deposition is performed, the side surfaces of the second groove 102 cannot grow tungsten, therefore, the directional deposition of tungsten can be realized, namely the deposition from the bottom to the top, the filling quality of the groove can be improved by the deposition from the top to the top, and the defect of forming a gap in the groove is eliminated; this is because there is no tungsten growth on the side of the second groove 102, so that the tungsten formed on the side in the prior art will not be closed in advance on the top of the groove, and therefore, the embodiment of the present invention can avoid forming a gap in the groove, and finally improve the filling quality.
In addition, the second tungsten deposition in the embodiment of the present invention adopts deposition from the bottom to the top, which is suitable for filling the second groove 102 with a larger aspect ratio, that is, the aspect ratio of the second groove 102 can be improved; in addition, the whole groove is formed by overlapping the first groove 101 and the second groove 102, so the depth-width ratio of the whole groove can be greatly increased, and the method is suitable for the requirement that the process technology node is continuously reduced.
In addition, the width of the bottom of the second groove 102 is smaller than the width of the top of the first groove 101, so that the bottom surface of the second tungsten layer 7 is not directly contacted with the surface of the first dielectric layer 1, the first barrier layer 2 and the second barrier layer 6 can block the whole first tungsten layer 3 and the whole second tungsten layer 7, and the quality of the tungsten metal structure is ensured.
The present invention has been described in detail with reference to the specific embodiments, but these are not to be construed as limiting the invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (14)
1. A method for filling a groove structure with tungsten is characterized by comprising the following steps:
step one, forming a first groove in a first dielectric layer;
step two, forming a first barrier layer, wherein the first barrier layer is formed on the bottom surface and the side surface of the first groove and extends to the surface outside the first groove;
step three, carrying out a first tungsten deposition and chemical mechanical polishing process to form a first tungsten layer, wherein the first tungsten layer completely fills the first groove and is flush with the surface of the first groove;
the first tungsten deposition is preceded by a step of growing a nucleation layer on which the first tungsten layer is formed; forming a second dielectric layer on the surface of the first dielectric layer on which the first tungsten layer is formed;
fifthly, forming a second groove penetrating through the second dielectric layer in the second dielectric layer, wherein the width of the bottom of the second groove is smaller than that of the top of the first groove, the second groove is superposed right above the first groove, and the surface of the bottom of the second groove exposes the surface of the first tungsten layer;
step six, forming a second barrier layer, wherein the second barrier layer is formed on the side surface and the bottom surface of the second groove and outside the second groove;
seventhly, removing the second barrier layer on the bottom surface of the second groove and the outer surface of the second groove, reserving the second barrier layer on the side surface of the second groove, and only exposing the surface of the first tungsten layer on the bottom surface of the second groove;
eighthly, performing second tungsten deposition to form a second tungsten layer, wherein the second tungsten deposition is grown by adopting a nucleation layer;
forming a tungsten metal structure by overlapping the first tungsten layer and the second tungsten layer; and the characteristic that the first tungsten layer is only exposed on the bottom surface of the second groove is utilized to ensure that the deposition mode of the second tungsten deposition is from bottom to top, the capability of filling the groove of the second tungsten deposition is improved by utilizing the deposition from bottom to top, the gap generated by filling is eliminated, and the aspect ratio of the second groove is improved.
2. The method of tungsten filling a trench structure of claim 1 wherein: the first barrier layer is a superposed layer of Ti and TiN.
3. The method of tungsten filling a trench structure of claim 1 wherein: the second barrier layer is a superposed layer of Ti and TiN; or the second barrier layer is a TiN single layer.
4. The method of tungsten filling a trench structure of claim 1 wherein: the deposition pattern of the first tungsten deposition employs conformal deposition that grows simultaneously from the bottom surface and the side surfaces of the first recess.
5. The method of tungsten filling a trench structure of claim 1 wherein: the depth of the first groove is less than 1/3 of the depth of the second groove.
6. The method of tungsten filling a trench structure of claim 1 wherein: the fourth step further includes a step of forming a metal hard mask layer on the surface of the second dielectric layer after the second dielectric layer is formed.
7. The method of tungsten filling a trench structure of claim 6 wherein: and in the sixth step, the second barrier layer extends to the surface of the metal hard mask layer outside the second groove, and in the seventh step, the second barrier layer on the outer surface of the second groove is removed and stops on the metal hard mask layer.
8. The method of tungsten filling a trench structure of claim 7 wherein: after the step seven is finished, the thickness requirement of the metal hard mask layer is greater than
9. The method of tungsten filling a trench structure of claim 8 wherein: the metal hard mask layer is made of TiN.
10. The method of tungsten filling a trench structure as claimed in claim 1 or 3 or 9 wherein: and seventhly, removing the second barrier layer on the bottom surface of the second groove and the outer surface of the second groove by adopting an Ar etching process.
11. The method of tungsten filling a trench structure of claim 10 wherein: the nucleation layer is formed by adopting an atomic layer deposition process, and process gas adopts WF6 plus SiH4 or B2H 6;
the process gases for the second tungsten deposition were H2 and WF 6.
12. The method of tungsten filling a trench structure of claim 11 wherein: and step three, after the chemical mechanical polishing process is finished, performing a fluorine removal process on the first tungsten layer.
13. The method of tungsten filling a trench structure of claim 12 wherein: the defluorination process adopts a hydrogen plasma treatment process.
14. The method of tungsten filling a trench structure of claim 2 wherein: the tungsten metal structure is a contact hole, and a doped region needing to be led out is formed in the semiconductor substrate covered by the tungsten metal structure;
or the tungsten metal structure is a through hole, and the through hole realizes the connection of an upper metal layer and a lower metal layer;
and the first dielectric layer and the second dielectric layer are superposed to form an interlayer film of a corresponding layer.
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| JP2004273523A (en) * | 2003-03-05 | 2004-09-30 | Renesas Technology Corp | Wiring connection structure |
| US7057287B2 (en) * | 2003-08-21 | 2006-06-06 | International Business Machines Corporation | Dual damascene integration of ultra low dielectric constant porous materials |
| JP5498808B2 (en) * | 2010-01-28 | 2014-05-21 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| CN102420181A (en) * | 2011-10-29 | 2012-04-18 | 上海华力微电子有限公司 | Production method of semiconductor device |
| US9240378B2 (en) * | 2014-05-16 | 2016-01-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of forming a copper layer using physical vapor deposition |
| US20150348840A1 (en) * | 2014-05-31 | 2015-12-03 | Lam Research Corporation | Methods of filling high aspect ratio features with fluorine free tungsten |
| US9633941B2 (en) * | 2015-08-21 | 2017-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
| CN108091609A (en) * | 2017-11-23 | 2018-05-29 | 上海华力微电子有限公司 | The method that tungsten fills groove structure |
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