CN109545741A - The method of tungsten filling groove structure - Google Patents
The method of tungsten filling groove structure Download PDFInfo
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- CN109545741A CN109545741A CN201811476989.8A CN201811476989A CN109545741A CN 109545741 A CN109545741 A CN 109545741A CN 201811476989 A CN201811476989 A CN 201811476989A CN 109545741 A CN109545741 A CN 109545741A
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- tungsten
- layer
- groove
- barrier layer
- deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
Abstract
The invention discloses a kind of methods of tungsten filling groove structure, comprising steps of Step 1: forming the first groove in first medium layer.Step 2: forming the first barrier layer.Step 3: carrying out first time tungsten deposition plus chemical mechanical milling tech the first tungsten layer of formation.Step 4: forming second dielectric layer.Step 5: forming the second groove for being superimposed upon the surface of the first groove.Step 6: forming the second barrier layer.Step 7: second barrier layer of the outer surface of the bottom surface of the second groove and the second groove is removed.Step 8: second of the tungsten deposit from bottom to top deposits to form the second tungsten layer.The present invention is able to achieve the seamless filling of tungsten, improves the quality of tungsten filling groove structure.
Description
Technical field
The present invention relates to a kind of manufacturing methods of semiconductor integrated circuit, more particularly to a kind of tungsten filling groove structure
Method.
Background technique
In semiconductor integrated circuit, contact hole and through-hole usually require to realize using tungsten plug, and this tungsten plug is
The tungsten metal structure that groove is formed is filled by tungsten.In prior art, the method for tungsten filling groove structure is all first in correspondence
Dielectric layer in disposably form corresponding groove, the depth of groove is consistent with the depth of required contact hole or through-hole；It
Afterwards, then in the inner surface of groove barrier layer is formed, carries out filling of the tungsten deposition realization to groove in a groove again later.But
It is that in existing method, tungsten deposition is a kind of conformal deposition growing that can all grow from the side of groove and bottom surface
(conformal growth) can also be carried out with regard to deposition along the surface shape of groove, due to also will do it in the side of groove
Tungsten growth, this can be very unfavorable to filling groove, because being easy to first close at the top of groove from the tungsten of lateral growth, thus
Gap is formed in inside grooves.This gap during chemical mechanical grinding (CMP) of subsequent tungsten is easy that shape is exposed
At cavity, the performance of this tungsten metal structure that finally will affect.In particular with the progress of technique, process node is lower and lower,
The size of contact hole or through-hole can be smaller and smaller, and depth-to-width ratio is lower and lower, can finally be more easier to generate gap in a groove.?
In semiconductor integrated circuit, especially in memory area, realize that seamless groove filling becomes critically important.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of methods of tungsten filling groove structure, are able to achieve the seamless of tungsten
Filling improves the quality of tungsten filling groove structure.
In order to solve the above technical problems, the method for tungsten filling groove structure provided by the invention includes the following steps:
Step 1: forming the first groove in first medium layer.
Step 2: forming the first barrier layer, first barrier layer is formed in bottom surface and the side of first groove
Face simultaneously extends to the surface outside first groove.
Step 3: carrying out first time tungsten deposition plus chemical mechanical milling tech the first tungsten layer of formation, first tungsten layer will
First groove is filled up completely simultaneously equal with the surface of first groove.
Step 4: forming second dielectric layer in the first medium layer surface for being formed with first tungsten layer.
Step 5: forming the second groove across the second dielectric layer in the second dielectric layer, described second is recessed
The bottom width of slot be less than first groove top width, and second groove be superimposed upon first groove just on
The bottom surface of side, second groove exposes the surface of first tungsten layer.
Step 6: forming the second barrier layer, second barrier layer is formed in side and the bottom table of second groove
Outside face and second groove.
Step 7: described the second of the outer surface of the bottom surface of second groove and second groove is stopped
Second barrier layer of layer removal, second groove side retains, and will only be located at the bottom surface of second groove
Expose on the surface of first tungsten layer.
It deposits to form the second tungsten layer Step 8: carrying out second of tungsten, be superimposed by first tungsten layer and second tungsten layer
Form tungsten metal structure；Only make described second the characteristics of the bottom surface of second groove is exposed using first tungsten layer
The depositional model of secondary tungsten deposition is to deposit from bottom to top, heavy using second of the tungsten is promoted to top deposition from bottom
The ability of long-pending filling groove, eliminates the gap that filling generates, and promotes the depth-to-width ratio of second groove.
A further improvement is that first barrier layer is the superimposed layer of Ti and TiN.
A further improvement is that second barrier layer is the superimposed layer of Ti and TiN；Alternatively, second barrier layer is
TiN single layer.
A further improvement is that the depositional model of the first time tungsten deposition uses the bottom surface from first groove
The conformal deposition grown simultaneously with side.
A further improvement is that the depth of first groove is less than the 1/3 of the depth of second groove.
A further improvement is that further including in the second dielectric layer after forming the second dielectric layer in step 4
Surface forms the step of metal hard mask layer.
A further improvement is that the second barrier layer described in step 6 extends to the metallic hard outside second groove
The surface of mask layer, when second barrier layer for the outer surface for removing second groove in step 7, stop at the gold
Belong on hard mask layer.
A further improvement is that the thickness requirement of the metal hard mask layer is greater than after step 7 completion
A further improvement is that the material of the metal hard mask layer is TiN.
A further improvement is that removing the bottom surface of second groove and described using Ar etching technics in step 7
Second barrier layer of the outer surface of second groove.
A further improvement is that further including the steps that growing nucleating layer, first tungsten before the first time tungsten deposition
Layer is formed on the nucleating layer；Second of the tungsten deposition is grown using no nucleating layer.
A further improvement is that the nucleating layer is formed using atom layer deposition process, process gas adds SiH4 using WF6
Or B2H6；
The process gas of second of the tungsten deposition uses H2 and WF6.
A further improvement is that it further includes later to first tungsten layer that step 3, which completes the chemical mechanical milling tech,
Carry out fluorine technique.
A further improvement is that described go fluorine technique using hydrogen gas plasma treatment process.
A further improvement is that the tungsten metal structure is contact hole, the semiconductor covered by the tungsten metal structure
The doped region in need being brought out is formed in substrate；Alternatively, the tungsten metal structure is through-hole, the through-hole realizes upper layer and lower layer
The connection of metal layer.The first medium layer and the second dielectric layer are superimposed the interlayer film to form respective layer.
The method of tungsten filling groove structure is particularly arranged in the present invention, and groove is divided into two steps and is formed, and first
Groove is filled using first time tungsten depositing operation identical with prior art, since the depth of the first groove reduces, the first groove
Depth-to-width ratio be reduced, therefore first time tungsten depositing operation is able to achieve the seamless filling to the first groove.
The present invention is subsequently formed second dielectric layer and the second groove on the basis of the seamless filling to the first groove,
Second groove is superimposed upon on the first groove, re-forms the second barrier layer and bottom surface and outer surface by the second groove later
The removal of the second barrier layer so that the second barrier layer is only located at the side of the second groove, in this way since the side of the second groove has
There is the bottom surface of the second barrier layer, the second groove to expose the first tungsten layer surface, therefore can make when carrying out second of tungsten deposition
Tungsten is only grown up from the first tungsten layer surface of bottom, and the side of the second groove not can be carried out tungsten growth, can be achieved with tungsten in this way
Orientated deposition i.e. from bottom to top deposit, from top to top Energy Deposition improve groove filling quality, eliminate in groove
The middle defect for forming gap；It this is because being grown in the side of the second groove without tungsten, therefore is not in occur side in the prior art
The tungsten that face is formed can be closed in advance at the top of groove, so, the invention can avoid gap is formed in a groove, finally improves and fill out
Mesenchymal amount.
In addition, second tungsten deposition is deposited using from bottom to top in the present invention, depth-to-width ratio biggish the can be suitably used for
The filling of two grooves can also improve the depth-to-width ratio of the second groove；Along with entire groove is by the first groove and the second groove
It is formed by stacking, so the present invention can greatly increase the depth-to-width ratio of entire groove, is adapted to what technology node constantly reduced
It needs.
In addition, the bottom width of the second groove of the invention can guarantee the second tungsten less than the top width of the first groove
The bottom surface of layer will not directly be contacted with the surface of first medium layer, so that the first barrier layer and the second barrier layer are able to achieve pair
The blocking of entire first tungsten layer and the second tungsten layer, ensure that the quality of tungsten metal structure.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the flow chart of the method for tungsten of embodiment of the present invention filling groove structure；
Fig. 2A-Fig. 2 I is the device junction composition in each step of present invention method.
Specific embodiment
As shown in Figure 1, being the flow chart of the method for tungsten of embodiment of the present invention filling groove structure；As Fig. 2A to Fig. 2 I institute
Show, be the device junction composition in each step of present invention method, tungsten of the embodiment of the present invention fills the method packet of groove structure
Include following steps:
Step 1: as shown in Figure 2 A, forming the first groove 101 in first medium layer 1.
The depth of first groove 101 is less than the 1/3 of the depth for the second groove 102 being subsequently formed.
Step 2: as shown in Figure 2 A, forming the first barrier layer 2, first barrier layer 2 is formed in first groove
101 bottom surface and side simultaneously extend to the surface outside first groove 101.
First barrier layer 2 is the superimposed layer of Ti and TiN.
Step 3: as shown in Figure 2 B, carrying out first time tungsten deposition plus chemical mechanical milling tech forming the first tungsten layer 3, such as
Shown in Fig. 2 C, first groove 101 is filled up completely simultaneously equal with the surface of first groove 101 by first tungsten layer 3.
Further include the steps that growing nucleating layer before the first time tungsten deposition, first tungsten layer 3 is in the nucleating layer
Upper formation.
The nucleating layer is formed using atom layer deposition process, and process gas adds SiH4 or B2H6 using WF6；
The depositional model of the first time tungsten deposition uses raw simultaneously from the bottom surface of first groove 101 and side
Long conformal deposition.
As shown in Figure 2 D, completing the chemical mechanical milling tech further includes later carrying out fluorine to first tungsten layer 3
Technique goes fluorine technique arrow shown in label 202 to indicate in Fig. 2 D, and the circle corresponding to label 201 with F word indicates F.
It is described to go fluorine technique using hydrogen gas plasma treatment process.
Step 4: as shown in Figure 2 E, forming second on 1 surface of first medium layer for being formed with first tungsten layer 3
Dielectric layer 4.
It further include in the 4 surface shape of second dielectric layer after forming the second dielectric layer 4 in the embodiment of the present invention
The step of at metal hard mask layer 5.
Step 5: as shown in Figure 2 F, being formed in the second dielectric layer 4 across the second recessed of the second dielectric layer 4
Slot 102, the bottom width of second groove 102 are less than the top width of first groove 101, and second groove
102 are superimposed upon the surface of first groove 101, and the bottom surface of second groove 102 is by the table of first tungsten layer 3
It shows out.
Step 6: as shown in Figure 2 G, forming the second barrier layer 6, second barrier layer 6 is formed in second groove
Outside 102 side and bottom surface and second groove 102.
Second barrier layer 6 is the superimposed layer of Ti and TiN；Alternatively, second barrier layer 6 is TiN single layer, that is,
In the embodiment of the present invention and first barrier layer 2 is different, and second barrier layer 6 can use TiN single layer.
Second barrier layer 6 extends to the surface of the metal hard mask layer 5 outside second groove 102.
Step 7: as illustrated in figure 2h, by the outside of the bottom surface of second groove 102 and second groove 102
Second barrier layer 6 on surface removes, and second barrier layer 6 of 102 side of the second groove retains, and will only be located at institute
Expose on the surface for stating first tungsten layer 3 of the bottom surface of the second groove 102.
The metal hard mask is stopped at when removing second barrier layer 6 of the outer surface of second groove 102
On layer 5.
The thickness requirement of the metal hard mask layer 5 is greater than after step 7 is completed
In the embodiment of the present invention, the material of the metal hard mask layer 5 is TiN.
The bottom surface of second groove 102 and the external table of second groove 102 are removed using Ar etching technics
Second barrier layer 6 in face.
Step 8: as shown in figure 2i, carry out second of tungsten and deposit to form the second tungsten layer 7, by first tungsten layer 3 and described
The superposition of second tungsten layer 7 forms tungsten metal structure；Only revealed in the bottom surface of second groove 102 using first tungsten layer 3
Out the characteristics of, makes the depositional model of second of tungsten deposition from bottom to top deposition, using from bottom to top deposition come
The ability for promoting the filling groove of second of the tungsten deposition, eliminates the gap that filling generates, and promotes second groove 102
Depth-to-width ratio.
Second of the tungsten deposition is grown using no nucleating layer.
The process gas of second of the tungsten deposition uses H2 and WF6.
The tungsten metal structure is contact hole, in need by being formed in semiconductor substrate that the tungsten metal structure is covered
The doped region being brought out；Alternatively, the tungsten metal structure is through-hole, the through-hole realizes the connection of upper layer and lower layer metal layer.Institute
It states first medium layer 1 and the second dielectric layer 4 is superimposed the interlayer film for forming respective layer.
The method of tungsten filling groove structure is particularly arranged in the embodiment of the present invention, and groove is divided into two step shapes
At the first groove 101 is filled using first time tungsten depositing operation identical with prior art, due to the depth of the first groove 101
It reduces, the depth-to-width ratio of the first groove 101 is reduced, therefore first time tungsten depositing operation is able to achieve to the seamless of the first groove 101
Gap filling.
The embodiment of the present invention is subsequently formed 4 He of second dielectric layer on the basis of the seamless filling to the first groove 101
Second groove 102, the second groove 102 are superimposed upon on the first groove 101, re-form the second barrier layer 6 later and by the second groove
102 bottom surface and the second barrier layer 6 removal of outer surface, so that the second barrier layer 6 is only located at the side of the second groove 102
Face, in this way due to the side of the second groove 102 have the second barrier layer 6, the second groove 102 bottom surface by the first tungsten layer 3
Surface is exposed, therefore tungsten can be made only to grow up from 3 surface of the first tungsten layer of bottom when carrying out second of tungsten deposition, the second groove
102 side not can be carried out tungsten growth, can be achieved with the orientated deposition of tungsten so i.e. from bottom to top deposition, from top to top
Portion's Energy Deposition improves the filling quality of groove, eliminates the defect for forming gap in a groove；This is because in the second groove 102
Side without tungsten grow, therefore be not in occur in the prior art side formation tungsten can be closed in advance at the top of groove, institute
With the embodiment of the present invention is avoided that forms gap in a groove, finally improves filling quality.
In addition, second tungsten deposition is deposited using from bottom to top in the embodiment of the present invention, can be suitably used for depth-to-width ratio compared with
The filling of the second big groove 102, can also improve the depth-to-width ratio of the second groove 102；Along with entire groove is recessed by first
What slot 101 and the second groove 102 were formed by stacking, so the present invention can greatly increase the depth-to-width ratio of entire groove, it is adapted to technique
The needs that technology node constantly reduces.
In addition, top width of the bottom width less than the first groove 101 of the second groove 102 of the embodiment of the present invention, energy
Enough guarantee that the bottom surface of the second tungsten layer 7 will not directly be contacted with the surface of first medium layer 1, so that the first barrier layer 2 and
Two barrier layers 6 are able to achieve the blocking to entire first tungsten layer 3 and the second tungsten layer 7, ensure that the quality of tungsten metal structure.
Above by specific embodiment, invention is explained in detail, but these are not constituted to of the invention
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (15)
1. a kind of method of tungsten filling groove structure, which comprises the steps of:
Step 1: forming the first groove in first medium layer；
Step 2: forming the first barrier layer, bottom surface that first barrier layer is formed in first groove and side are simultaneously
Extend to the surface outside first groove；
Chemical mechanical milling tech is added to form the first tungsten layer Step 3: carrying out first time tungsten deposition, first tungsten layer will be described
First groove is filled up completely simultaneously equal with the surface of first groove；
Step 4: forming second dielectric layer in the first medium layer surface for being formed with first tungsten layer；
Step 5: the second groove across the second dielectric layer is formed in the second dielectric layer, second groove
Bottom width is less than the top width of first groove, and second groove is superimposed upon the surface of first groove,
The bottom surface of second groove exposes the surface of first tungsten layer；
Step 6: formed the second barrier layer, second barrier layer be formed in side and the bottom surface of second groove with
And outside second groove；
Step 7: second barrier layer of the outer surface of the bottom surface of second groove and second groove is gone
It removes, second barrier layer of second groove side retains, and will only be located at described in the bottom surface of second groove
Expose on the surface of first tungsten layer；
It deposits to form the second tungsten layer Step 8: carrying out second of tungsten, is superimposed and is formed by first tungsten layer and second tungsten layer
Tungsten metal structure；Only make second of the tungsten the characteristics of bottom surface of second groove is exposed using first tungsten layer
The depositional model of deposition is to deposit from bottom to top, promotes what second of the tungsten deposited to top deposition using from bottom
The ability of groove is filled, the gap that filling generates is eliminated, promotes the depth-to-width ratio of second groove.
2. the method for tungsten as described in claim 1 filling groove structure, it is characterised in that: first barrier layer be Ti and
The superimposed layer of TiN.
3. the method for tungsten as described in claim 1 filling groove structure, it is characterised in that: second barrier layer be Ti and
The superimposed layer of TiN；Alternatively, second barrier layer is TiN single layer.
4. the method for tungsten filling groove structure as described in claim 1, it is characterised in that: the deposition of the first time tungsten deposition
Mode uses the conformal deposition grown simultaneously from the bottom surface of first groove and side.
5. the method for tungsten filling groove structure as described in claim 1, it is characterised in that: the depth of first groove is less than
The 1/3 of the depth of second groove.
6. the method for tungsten filling groove structure as described in claim 1, it is characterised in that: forming described second in step 4
Further include the steps that forming metal hard mask layer in the second medium layer surface after dielectric layer.
7. the method for tungsten filling groove structure as claimed in claim 6, it is characterised in that: the second barrier layer described in step 6
The surface of the metal hard mask layer outside second groove is extended to, the external table of second groove is removed in step 7
It is stopped at when second barrier layer in face in the metal hard mask layer.
8. the method for tungsten filling groove structure as claimed in claim 7, it is characterised in that: the metal after step 7 is completed
The thickness requirement of hard mask layer is greater than
9. the method for tungsten filling groove structure as claimed in claim 8, it is characterised in that: the material of the metal hard mask layer
For TiN.
10. the method for the tungsten filling groove structure as described in claim 1 or 3 or 9, it is characterised in that: use Ar in step 7
Etching technics removes second barrier layer of the bottom surface of second groove and the outer surface of second groove.
11. the method for tungsten filling groove structure as described in claim 1, it is characterised in that: before the first time tungsten deposition
Further include the steps that growing nucleating layer, first tungsten layer is formed on the nucleating layer；Second of the tungsten deposition uses nothing
Nucleating layer growth.
12. the method for tungsten filling groove structure as claimed in claim 11, it is characterised in that: the nucleating layer uses atomic layer
Depositing operation is formed, and process gas adds SiH4 or B2H6 using WF6；
The process gas of second of the tungsten deposition uses H2 and WF6.
13. the method for tungsten filling groove structure as claimed in claim 12, it is characterised in that: step 3 completes the chemical machine
It further include that fluorine technique is carried out to first tungsten layer after tool grinding technics.
14. the method for tungsten filling groove structure as claimed in claim 13, it is characterised in that: described to go fluorine technique using hydrogen
Plasma-treating technology.
15. the method for tungsten filling groove structure as claimed in claim 2, it is characterised in that: the tungsten metal structure is contact
Hole is formed the doped region in need being brought out in semiconductor substrate that the tungsten metal structure is covered；
Alternatively, the tungsten metal structure is through-hole, the through-hole realizes the connection of upper layer and lower layer metal layer；
The first medium layer and the second dielectric layer are superimposed the interlayer film to form respective layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113035777A (en) * | 2021-04-28 | 2021-06-25 | 上海华虹宏力半导体制造有限公司 | CVD filling method for TSV hole |
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| CN113035777B (en) * | 2021-04-28 | 2023-04-28 | 上海华虹宏力半导体制造有限公司 | CVD filling method for TSV holes |
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| CN109545741B (en) | 2020-11-24 |
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