CN109531282B - 用于钴的化学机械抛光方法 - Google Patents

用于钴的化学机械抛光方法 Download PDF

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Publication number
CN109531282B
CN109531282B CN201810957437.2A CN201810957437A CN109531282B CN 109531282 B CN109531282 B CN 109531282B CN 201810957437 A CN201810957437 A CN 201810957437A CN 109531282 B CN109531282 B CN 109531282B
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CN
China
Prior art keywords
chemical mechanical
mechanical polishing
polishing
cobalt
substrate
Prior art date
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Active
Application number
CN201810957437.2A
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English (en)
Chinese (zh)
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CN109531282A (zh
Inventor
M·G·瑟瓦纳亚格姆
H·王
M·万哈尼赫姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN201810957437.2A 2017-09-21 2018-08-21 用于钴的化学机械抛光方法 Active CN109531282B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/710,892 US10170335B1 (en) 2017-09-21 2017-09-21 Chemical mechanical polishing method for cobalt
US15/710892 2017-09-21

Publications (2)

Publication Number Publication Date
CN109531282A CN109531282A (zh) 2019-03-29
CN109531282B true CN109531282B (zh) 2024-01-05

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Family Applications (1)

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CN201810957437.2A Active CN109531282B (zh) 2017-09-21 2018-08-21 用于钴的化学机械抛光方法

Country Status (5)

Country Link
US (1) US10170335B1 (enExample)
JP (1) JP7231362B2 (enExample)
KR (1) KR102525310B1 (enExample)
CN (1) CN109531282B (enExample)
TW (1) TWI787329B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10947413B2 (en) * 2019-03-29 2021-03-16 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101779274A (zh) * 2007-08-15 2010-07-14 3M创新有限公司 用于修饰适于半导体制作的表面的组合物和方法
CN105295737A (zh) * 2014-07-25 2016-02-03 气体产品与化学公司 含钴衬底的化学机械抛光(cmp)
CN105400434A (zh) * 2014-09-05 2016-03-16 富士胶片平面解决方案有限公司 抛光组合物及抛光钴膜的方法
WO2016102279A1 (en) * 2014-12-22 2016-06-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or co-balt alloy comprising substrates
CN108372431A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 针对钨的化学机械抛光方法

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KR100672941B1 (ko) * 2004-10-06 2007-01-24 삼성전자주식회사 구리 부식 억제 세정 용액 및 이를 이용하는 씨엠피 공정
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011003665A (ja) 2009-06-17 2011-01-06 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
CN102304327A (zh) 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
US20130186850A1 (en) 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
US20140011362A1 (en) 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
EP2682441A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
WO2014132641A1 (ja) 2013-02-28 2014-09-04 株式会社フジミインコーポレーテッド コバルト除去のための研磨スラリー
JP6156630B2 (ja) 2013-05-24 2017-07-05 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US10059860B2 (en) 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
WO2016008896A1 (en) 2014-07-15 2016-01-21 Basf Se A chemical mechanical polishing (cmp) composition
US9688885B2 (en) 2014-10-21 2017-06-27 Cabot Microelectronics Corporation Cobalt polishing accelerators
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
CN107075310B (zh) 2014-10-21 2019-04-02 嘉柏微电子材料股份公司 钴凹陷控制剂
TWI775722B (zh) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN104830235B (zh) 2015-04-29 2017-06-23 清华大学 用于钴阻挡层结构化学机械抛光的抛光液及其应用
US10899945B2 (en) * 2015-08-12 2021-01-26 Basf Se Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
US9528030B1 (en) 2015-10-21 2016-12-27 Cabot Microelectronics Corporation Cobalt inhibitor combination for improved dishing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101779274A (zh) * 2007-08-15 2010-07-14 3M创新有限公司 用于修饰适于半导体制作的表面的组合物和方法
CN105295737A (zh) * 2014-07-25 2016-02-03 气体产品与化学公司 含钴衬底的化学机械抛光(cmp)
CN105400434A (zh) * 2014-09-05 2016-03-16 富士胶片平面解决方案有限公司 抛光组合物及抛光钴膜的方法
WO2016102279A1 (en) * 2014-12-22 2016-06-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or co-balt alloy comprising substrates
CN108372431A (zh) * 2017-01-31 2018-08-07 罗门哈斯电子材料Cmp控股股份有限公司 针对钨的化学机械抛光方法

Also Published As

Publication number Publication date
JP2019057710A (ja) 2019-04-11
TW201915132A (zh) 2019-04-16
US10170335B1 (en) 2019-01-01
CN109531282A (zh) 2019-03-29
TWI787329B (zh) 2022-12-21
JP7231362B2 (ja) 2023-03-01
KR102525310B1 (ko) 2023-04-24
KR20190033431A (ko) 2019-03-29

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.