JP7231362B2 - コバルト用ケミカルメカニカルポリッシング方法 - Google Patents

コバルト用ケミカルメカニカルポリッシング方法 Download PDF

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Publication number
JP7231362B2
JP7231362B2 JP2018175754A JP2018175754A JP7231362B2 JP 7231362 B2 JP7231362 B2 JP 7231362B2 JP 2018175754 A JP2018175754 A JP 2018175754A JP 2018175754 A JP2018175754 A JP 2018175754A JP 7231362 B2 JP7231362 B2 JP 7231362B2
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
optionally
cobalt
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018175754A
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English (en)
Japanese (ja)
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JP2019057710A (ja
JP2019057710A5 (enExample
Inventor
ムラリ・ジー・ティヴァナヤガム
ホンユー・ワン
マシュー・ヴァン・ハネヘム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Publication of JP2019057710A publication Critical patent/JP2019057710A/ja
Publication of JP2019057710A5 publication Critical patent/JP2019057710A5/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2018175754A 2017-09-21 2018-09-20 コバルト用ケミカルメカニカルポリッシング方法 Active JP7231362B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/710,892 US10170335B1 (en) 2017-09-21 2017-09-21 Chemical mechanical polishing method for cobalt
US15/710,892 2017-09-21

Publications (3)

Publication Number Publication Date
JP2019057710A JP2019057710A (ja) 2019-04-11
JP2019057710A5 JP2019057710A5 (enExample) 2021-10-21
JP7231362B2 true JP7231362B2 (ja) 2023-03-01

Family

ID=64739833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018175754A Active JP7231362B2 (ja) 2017-09-21 2018-09-20 コバルト用ケミカルメカニカルポリッシング方法

Country Status (5)

Country Link
US (1) US10170335B1 (enExample)
JP (1) JP7231362B2 (enExample)
KR (1) KR102525310B1 (enExample)
CN (1) CN109531282B (enExample)
TW (1) TWI787329B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10947413B2 (en) * 2019-03-29 2021-03-16 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
CN113004801B (zh) * 2019-12-20 2024-03-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法

Citations (3)

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JP2015201644A (ja) 2014-04-04 2015-11-12 フジフイルム プラナー ソリューションズ エルエルシー シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法
JP2016030831A (ja) 2014-07-25 2016-03-07 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ コバルト含有基板の化学的機械的研磨（ｃｍｐ）
WO2016102279A1 (en) 2014-12-22 2016-06-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or co-balt alloy comprising substrates

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US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
KR100672941B1 (ko) * 2004-10-06 2007-01-24 삼성전자주식회사 구리 부식 억제 세정 용액 및 이를 이용하는 씨엠피 공정
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011003665A (ja) 2009-06-17 2011-01-06 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
CN102304327A (zh) 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
US20130186850A1 (en) 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
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KR102641590B1 (ko) * 2015-08-12 2024-02-27 바스프 에스이 코발트 함유 기판의 연마를 위한 화학 기계 연마 (cmp) 조성물의 용도
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JP2015201644A (ja) 2014-04-04 2015-11-12 フジフイルム プラナー ソリューションズ エルエルシー シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法
JP2016030831A (ja) 2014-07-25 2016-03-07 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ コバルト含有基板の化学的機械的研磨（ｃｍｐ）
WO2016102279A1 (en) 2014-12-22 2016-06-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or co-balt alloy comprising substrates

Also Published As

Publication number Publication date
TW201915132A (zh) 2019-04-16
US10170335B1 (en) 2019-01-01
TWI787329B (zh) 2022-12-21
CN109531282B (zh) 2024-01-05
JP2019057710A (ja) 2019-04-11
KR20190033431A (ko) 2019-03-29
CN109531282A (zh) 2019-03-29
KR102525310B1 (ko) 2023-04-24

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