CN109524288B - 等离子体处理装置以及等离子体处理方法 - Google Patents

等离子体处理装置以及等离子体处理方法 Download PDF

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Publication number
CN109524288B
CN109524288B CN201711453386.1A CN201711453386A CN109524288B CN 109524288 B CN109524288 B CN 109524288B CN 201711453386 A CN201711453386 A CN 201711453386A CN 109524288 B CN109524288 B CN 109524288B
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frequency power
electrode
phase
frequency
plasma processing
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CN109524288A (zh
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山田一也
山本浩一
安井尚辉
池田纪彦
森功
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201711453386.1A 2017-09-20 2017-12-27 等离子体处理装置以及等离子体处理方法 Active CN109524288B (zh)

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JP2017-179665 2017-09-20
JP2017179665A JP6703508B2 (ja) 2017-09-20 2017-09-20 プラズマ処理装置及びプラズマ処理方法

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CN109524288A CN109524288A (zh) 2019-03-26
CN109524288B true CN109524288B (zh) 2021-01-05

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US (2) US10699884B2 (https=)
JP (1) JP6703508B2 (https=)
KR (1) KR102042576B1 (https=)
CN (1) CN109524288B (https=)
TW (1) TWI703632B (https=)

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US11721526B2 (en) * 2019-05-31 2023-08-08 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
CN112424911B (zh) * 2019-06-20 2023-09-22 株式会社日立高新技术 等离子体处理装置以及等离子体处理方法
JP6884927B2 (ja) 2019-07-04 2021-06-09 株式会社日立ハイテク 三次元形状検出装置、方法、及びプラズマ処理装置
CN117293008A (zh) * 2019-08-05 2023-12-26 株式会社日立高新技术 等离子处理装置
JP2023516076A (ja) 2020-03-04 2023-04-17 ラム リサーチ コーポレーション 調整可能なエッジシースシステムでの反射電力最小化
JP7743833B2 (ja) * 2020-06-29 2025-09-25 住友大阪セメント株式会社 静電チャック
KR102936883B1 (ko) 2021-08-23 2026-03-11 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
US20240055228A1 (en) * 2022-08-10 2024-02-15 Mks Instruments, Inc. Plasma Process Control of Multi-Electrode Systems Equipped with Ion Energy Sensors
US20240355586A1 (en) * 2023-04-24 2024-10-24 Applied Materials, Inc. Multi-electrode source assembly for plasma processing

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JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
JP2011017076A (ja) * 2009-06-12 2011-01-27 Mitsubishi Heavy Ind Ltd 基板処理装置
CN104871430A (zh) * 2012-12-18 2015-08-26 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
JP2016162759A (ja) * 2015-02-26 2016-09-05 コニカミノルタ株式会社 電気機器用オプション装置
CN106024569A (zh) * 2012-10-09 2016-10-12 诺发系统公司 用于电感耦合等离子体系统的混合阻抗匹配

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JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
JP2005071872A (ja) * 2003-08-26 2005-03-17 Noda Rf Technologies:Kk 高周波電源装置および高周波電力供給方法
JP2007067037A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
JP2011017076A (ja) * 2009-06-12 2011-01-27 Mitsubishi Heavy Ind Ltd 基板処理装置
CN106024569A (zh) * 2012-10-09 2016-10-12 诺发系统公司 用于电感耦合等离子体系统的混合阻抗匹配
CN104871430A (zh) * 2012-12-18 2015-08-26 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
JP2016162759A (ja) * 2015-02-26 2016-09-05 コニカミノルタ株式会社 電気機器用オプション装置

Also Published As

Publication number Publication date
US11094512B2 (en) 2021-08-17
US10699884B2 (en) 2020-06-30
JP6703508B2 (ja) 2020-06-03
CN109524288A (zh) 2019-03-26
KR102042576B1 (ko) 2019-11-11
TW201916158A (zh) 2019-04-16
US20200279719A1 (en) 2020-09-03
US20190088452A1 (en) 2019-03-21
KR20190032981A (ko) 2019-03-28
TWI703632B (zh) 2020-09-01
JP2019057547A (ja) 2019-04-11

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