CN109494209B - 一种侧壁可浸润超薄封装结构及其制造方法 - Google Patents

一种侧壁可浸润超薄封装结构及其制造方法 Download PDF

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CN109494209B
CN109494209B CN201811165282.5A CN201811165282A CN109494209B CN 109494209 B CN109494209 B CN 109494209B CN 201811165282 A CN201811165282 A CN 201811165282A CN 109494209 B CN109494209 B CN 109494209B
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周青云
沈锦新
周海锋
吴昊平
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JCET Group Co Ltd
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Abstract

本发明涉及一种侧壁可浸润超薄封装结构及其制造方法，所述结构包括内管脚铜柱和外管脚铜柱，所述内管脚铜柱和外管脚铜柱之间填充有预包封层，所述内管脚铜柱、外管脚铜柱和预包封层表面设置有线路层，所述线路层包括基岛和引脚，所述基岛上设置有芯片，所述引脚上设置有到边铜柱，所述线路层、芯片和到边铜柱外设置有包封层，所述外管脚铜柱、引脚和到边铜柱三结构共同形成可浸润管脚，且外管脚铜柱、引脚和到边铜柱三结构的本体外侧通过半切割或半蚀刻方式形成可浸润管脚的可焊接侧壁。本发明采用带底板的预包封框架结构，高密度的线路设计，线路与到边铜柱的结合可以满足管脚侧壁足够的侧壁可浸润的铜厚。

Description

一种侧壁可浸润超薄封装结构及其制造方法
技术领域
本发明涉及一种侧壁可浸润超薄封装结构及其制造方法，属于半导体封装技术领域。
背景技术
汽车产品的QFN引线框架结构，要求其侧面可浸润，在引线框架的每颗的侧面有小的凹坑，这种结构在封装完成以后的PCB上板时，焊锡会在侧面露出来。
按照现有博世汽车电子制定标准，侧面浸润深度至少为100um，才能通过目前汽车行业所规定的100％的AVI要求。该标准被全球所认可采用，意味着基板或者框架管脚侧壁铜厚需要在150um以上，如此QFN框架其管脚间距至少在200um以上，基板线路的线宽线距超过100um；同样无底板结构的MIS或者ETS结构，其管脚间距同样需要在200um以上。
以上两种结构框架，仅能够满足现有汽车电子侧壁可浸润需求，如果想要进一步提高管脚密度，则需要降低框架铜厚，但是侧壁可浸润所对应深度和100％可被AVI检视这两点要求则无法满足。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种侧壁可浸润超薄封装结构及其制造方法，它采用带底板的预包封框架结构，高密度的线路设计，线路与到边铜柱的结合可以满足管脚侧壁足够的侧壁可浸润的铜厚，又可以获得高密度的QFN封装结构。
本发明解决上述问题所采用的技术方案为：一种侧壁可浸润超薄封装结构，它包括内管脚铜柱和外管脚铜柱，所述内管脚铜柱和外管脚铜柱之间填充有预包封层，所述内管脚铜柱、外管脚铜柱和预包封层表面设置有线路层，所述线路层包括基岛和引脚，所述基岛上设置有芯片，所述引脚上设置有到边铜柱，所述线路层、芯片和到边铜柱外设置有包封层，所述外管脚铜柱、引脚和到边铜柱三结构共同形成可浸润管脚，且外管脚铜柱、引脚和到边铜柱三结构的本体外侧通过半切割或半蚀刻方式形成可浸润管脚的可焊接侧壁。
优选的，所述内管脚铜柱、外管脚铜柱和预包封层的厚度为30～60um。
优选的，所述线路层的厚度为12～60um。
优选的，所述到边铜柱的截面形状为圆形、正方形、长方形、梯形或T字形。
一种侧壁可浸润超薄封装结构的制造方法，所述方法包括以下步骤：
步骤一、取一金属基材作为底板；
步骤二、在底板正面形成内管脚铜柱和外管脚铜柱；
步骤三、采用绝缘材料对金属基材正面的内管脚铜柱和外管脚铜柱进行预包封；
步骤四、通过机械方式研磨至指定厚度，并将内管脚铜柱和外管脚铜柱表面露出；
步骤五、在内管脚铜柱、外管脚铜柱和预包封层表面形成线路层，线路层包括基岛和引脚，基岛覆盖于内管脚铜柱表面，引脚覆盖于外管脚铜柱表面；
步骤六、在外管脚铜柱对应的引脚正面形成到边铜柱，外管脚铜柱、引脚和到边铜柱三结构共同形成可浸润管脚；；
步骤七、在线路层上进行封装前段作业，进行单芯片或多芯片装片、球焊或者倒装工艺；
步骤八、采用绝缘材料对底板上表面进行整体性包封；
步骤九、对底板进行蚀刻，露出内管脚铜柱和外管脚铜柱；
步骤十、通过半切割或半蚀刻方式在外管脚铜柱、引脚和到边铜柱外侧形成可焊接侧壁；
步骤十一、采用机械或者激光切割方式，将整条产品一颗一颗切割独立开来，形成单颗产品。
与现有技术相比，本发明的优点在于：
1、传统可浸润式侧壁结构，要求框架厚度在100um以上，甚至更厚，以确保单颗产品侧壁良好焊接和100％被AVI检视到，而本发明结构中在管脚对应线路上部形成一定高度的到边铜柱，确保超薄框架或者铜厚小于100um以下框架，可以满足可浸润和100％AVI的需求；
2、本发明线路上部形成到边铜柱，在相同包封厚度的情况下，可进一步降低框架厚度，以此降低整个封装产品厚度，提高产品空间利用率；
3、本发明采用先封装后蚀刻工艺，框架预包封厚度的降低，可提升线路的线宽线距能力，降低外管脚间距，提高产品线路密度，实现超薄有效框架厚度和封装产品厚度；
4、本发明到边铜柱可采用梯形、T型或其他不规则结构，上宽下窄，提高管脚结合力。
附图说明
图1为本发明一种侧壁可浸润超薄封装结构实施例1的示意图。
图2～图14为本发明一种侧壁可浸润超薄封装结构制造方法的工序流程图。
图15、图16为本发明一种侧壁可浸润超薄封装结构实施例2的示意图。
其中：
内管脚铜柱1
外管脚铜柱2
预包封层3
线路层4
基岛5
引脚6
芯片7
到边铜柱8
包封层9
可浸润管脚10。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1：芯片正装侧壁可浸润超薄封装结构
如图1所示，本实施例中的一种侧壁可浸润超薄封装结构，它包括内管脚铜柱1和外管脚铜柱2，所述内管脚铜柱1和外管脚铜柱2之间填充有预包封层3，所述内管脚铜柱1、外管脚铜柱2和预包封层3的厚度相同，所述内管脚铜柱1、外管脚铜柱2和预包封层3表面设置有线路层4，所述线路层4包括基岛5和引脚6，所述基岛5的位置与内管脚铜柱1的位置相对应，所述引脚6的位置与外管脚铜柱2的位置相对应，所述基岛5上设置有芯片7，所述引脚6上设置有到边铜柱8，所述线路层4、芯片7和到边铜柱8外设置有包封层9，所述外管脚铜柱2、引脚6和到边铜柱8三结构共同形成可浸润管脚10，且外管脚铜柱2、引脚6和到边铜柱8三结构的本体外侧(靠近塑封体切割道一边)通过半切割或半蚀刻方式形成可浸润管脚10的可焊接侧壁；
所述芯片7与引脚6之间通过焊线相连接；
所述内管脚铜柱1、外管脚铜柱2和预包封层3的厚度为30～60um；
所述线路层4的厚度为12～60um。
其制造方法包括以下步骤：
步骤一、参见图2，取一金属基材作为底板，所述底板通常采用金属材质，如SPCC、铜等；
步骤二、参见图3，依次通过压膜、光刻、显影、电镀和去膜等步骤在金属基材正面形成内管脚铜柱和外管脚铜柱；
步骤三、参见图4，预包封
采用绝缘材料对底板正面的内管脚铜柱和外管脚铜柱进行预包封，预包封的材料可以依据产品特性选择有填料或者没有填料的种类，塑封方式可以采用模具灌胶方式、喷涂设备喷涂方式、贴膜方式或是刷胶的方式；
步骤四、参见图5，减薄
通过机械方式研磨至指定厚度，并将内管脚铜柱和外管脚铜柱表面露出；
步骤五、制备导电种子层
在研磨后的预包封材料上制备一层导电种子层，导电种子层可以是金属类物质，如镍、钛、铜、银等，也可以使非金属导电高分子材料，如聚苯胺、聚吡咯、聚噻吩等。沉积方式通常为化学沉积、气相沉积、溅射等；
步骤六、参见图6，电镀形成线路层
依次通过压膜、光刻、显影、电镀和去膜等步骤，在内管脚铜柱、外管脚铜柱和预包封层表面形成线路层，线路层包括基岛和引脚，基岛覆盖于内管脚铜柱表面，引脚覆盖于外管脚铜柱表面；
步骤七、参见图7，电镀形成到边铜柱
依次通过压膜、光刻、显影、电镀和去膜等步骤在外管脚铜柱对应的引脚正面形成到边铜柱，外管脚铜柱、引脚和到边铜柱三结构共同形成可浸润管脚；
步骤八、快速蚀刻
快速蚀刻的方式去除多余的导电种子层；
步骤九、参见图8，线路表面处理
对框架内部线路进行局部或全部线路的表面处理，即溅镀一层银金属或镍金属或钯金属层；
步骤十、参见图9、图10，在线路层上进行封装前段作业
在线路层上进行单芯片或多芯片装片、球焊或者倒装工艺；
步骤十一、参见图11，包封
采用绝缘材料对金属基材上表面进行整体性包封，保护芯片及内部线路；
步骤十二、参见图12，底板蚀刻
对底板进行蚀刻，露出内管脚铜柱和外管脚铜柱；
步骤十三、参见图13，半切或半蚀刻
采用尺寸宽于切割刀的刀片进行可浸润管脚背面切割，或者采用半蚀刻方式形成一定深度凹槽(切割或蚀刻深度小于到边铜柱整个厚度)，从而外管脚铜柱、引脚和到边铜柱外侧形成可焊接侧壁；
步骤十四、参见图14，切成单颗产品
采用机械或者激光切割方式，将整条产品一颗一颗切割独立开来，形成单颗产品。
实施例2：到边铜柱为梯形结构或者T型结构
参见图15、图16，实施例2与实施例1的区别在于：所述到边铜柱8为梯形结构或T型结构。
除上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。

Claims (3)

1.一种侧壁可浸润超薄封装结构，其特征在于：它包括内管脚铜柱(1)和外管脚铜柱(2)，所述内管脚铜柱(1)和外管脚铜柱(2)之间填充有预包封层(3)，所述内管脚铜柱(1)、外管脚铜柱(2)和预包封层(3)表面设置有线路层(4)，所述线路层(4)包括基岛(5)和引脚(6)，所述基岛(5)上设置有芯片(7)，所述引脚(6)上设置有到边铜柱(8)，所述线路层(4)、芯片(7)和到边铜柱(8)外设置有包封层(9)，所述外管脚铜柱(2)、引脚(6)和到边铜柱(8)三结构共同形成可浸润管脚(10)，且外管脚铜柱(2)、引脚(6)和到边铜柱(8)三结构的本体外侧通过半切割或半蚀刻方式形成可浸润管脚(10)的可焊接侧壁。
2.根据权利要求1所述的一种侧壁可浸润超薄封装结构，其特征在于：所述到边铜柱(8)的截面形状为圆形、正方形、长方形、梯形或T字形。
3.一种侧壁可浸润超薄封装结构的制造方法，其特征在于所述方法包括以下步骤：
步骤一、取一金属基材作为底板；
步骤二、在底板正面形成内管脚铜柱和外管脚铜柱；
步骤三、采用绝缘材料对金属基材正面的内管脚铜柱和外管脚铜柱进行预包封；
步骤四、通过机械方式研磨至指定厚度，并将内管脚铜柱和外管脚铜柱表面露出；
步骤五、在内管脚铜柱、外管脚铜柱和预包封层表面形成线路层，线路层包括基岛和引脚，基岛覆盖于内管脚铜柱表面，引脚覆盖于外管脚铜柱表面；
步骤六、在外管脚铜柱对应的引脚正面形成到边铜柱，外管脚铜柱、引脚和到边铜柱三结构共同形成可浸润管脚；
步骤七、在线路层上进行封装前段作业，进行单芯片或多芯片装片、球焊或者倒装工艺；
步骤八、采用绝缘材料对底板上表面进行整体性包封；
步骤九、对底板进行蚀刻，露出内管脚铜柱和外管脚铜柱；
步骤十、通过半切割或半蚀刻方式在外管脚铜柱、引脚和到边铜柱外侧形成可焊接侧壁；
步骤十一、采用机械或者激光切割方式，将整条产品一颗一颗切割独立开来，形成单颗产品。
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