CN109478547A - 显示装置 - Google Patents
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- Publication number
- CN109478547A CN109478547A CN201780042680.5A CN201780042680A CN109478547A CN 109478547 A CN109478547 A CN 109478547A CN 201780042680 A CN201780042680 A CN 201780042680A CN 109478547 A CN109478547 A CN 109478547A
- Authority
- CN
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- Prior art keywords
- light emitting
- light
- emitting diode
- grade
- miniature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000011159 matrix material Substances 0.000 claims abstract description 486
- 239000000758 substrate Substances 0.000 claims abstract description 270
- 239000004065 semiconductor Substances 0.000 claims abstract description 182
- 239000000975 dye Substances 0.000 claims abstract description 77
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000049 pigment Substances 0.000 claims abstract description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 212
- 229910052751 metal Inorganic materials 0.000 claims description 152
- 239000002184 metal Substances 0.000 claims description 152
- 239000000843 powder Substances 0.000 claims description 142
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- 239000000084 colloidal system Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
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- 238000000034 method Methods 0.000 description 43
- 238000004020 luminiscence type Methods 0.000 description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 34
- 239000010949 copper Substances 0.000 description 31
- 239000003292 glue Substances 0.000 description 30
- 239000010931 gold Substances 0.000 description 26
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- 229910052802 copper Inorganic materials 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000011521 glass Substances 0.000 description 18
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- 239000011787 zinc oxide Substances 0.000 description 17
- 239000004642 Polyimide Substances 0.000 description 16
- 229920001721 polyimide Polymers 0.000 description 16
- 150000004767 nitrides Chemical class 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
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- 238000012545 processing Methods 0.000 description 14
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 9
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- YEIGUXGHHKAURB-UHFFFAOYSA-N viridine Natural products O=C1C2=C3CCC(=O)C3=CC=C2C2(C)C(O)C(OC)C(=O)C3=COC1=C23 YEIGUXGHHKAURB-UHFFFAOYSA-N 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
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- 239000000377 silicon dioxide Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
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- 229910002601 GaN Inorganic materials 0.000 description 5
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000006071 cream Substances 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
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- 238000001039 wet etching Methods 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
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- 150000004645 aluminates Chemical class 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- SAJNUUOCJWPCPH-UHFFFAOYSA-N nickel platinum silver Chemical compound [Ag][Ni][Pt] SAJNUUOCJWPCPH-UHFFFAOYSA-N 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910020440 K2SiF6 Inorganic materials 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 239000001045 blue dye Substances 0.000 description 2
- 239000001055 blue pigment Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 239000007850 fluorescent dye Substances 0.000 description 2
- 235000021384 green leafy vegetables Nutrition 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Abstract
本发明提出一种显示装置,包括发光二极管矩阵或发光二极管条,其包含多个发光二极管,该等发光二极管的半导体层是有部分相连。显示装置另包括萤光体矩阵,设置于发光二极管矩阵或条上,且包括多个萤光体像素,萤光体像素可包含颜料或染料,且可结合光致抗蚀剂材料。另一方面,发光二极管的电极可通过一激光界面层电性连接至基板或基座的接垫上。
Description
PCT国内申请,说明书已公开。
Claims (20)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662373358P | 2016-08-11 | 2016-08-11 | |
US62/373,358 | 2016-08-11 | ||
US201662429084P | 2016-12-02 | 2016-12-02 | |
US62/429,084 | 2016-12-02 | ||
US201662439904P | 2016-12-29 | 2016-12-29 | |
US62/439,904 | 2016-12-29 | ||
PCT/CN2017/096604 WO2018028593A1 (zh) | 2016-08-11 | 2017-08-09 | 显示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109478547A true CN109478547A (zh) | 2019-03-15 |
Family
ID=61161738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780042680.5A Pending CN109478547A (zh) | 2016-08-11 | 2017-08-09 | 显示装置 |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN109478547A (zh) |
TW (1) | TWI640109B (zh) |
WO (1) | WO2018028593A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI672683B (zh) * | 2018-04-03 | 2019-09-21 | 友達光電股份有限公司 | 顯示面板 |
TWI708104B (zh) * | 2018-05-16 | 2020-10-21 | 財團法人工業技術研究院 | 顯示陣列 |
CN110504281A (zh) | 2018-05-16 | 2019-11-26 | 财团法人工业技术研究院 | 显示阵列的制造方法 |
CN110379327B (zh) * | 2019-08-13 | 2024-07-16 | 深圳视爵光旭电子有限公司 | 一种矩阵式smd-led结构的显示模组 |
JP2021043378A (ja) * | 2019-09-12 | 2021-03-18 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
TWI730472B (zh) * | 2019-10-25 | 2021-06-11 | 進化光學有限公司 | 使用雷射切割道絕緣之全彩led顯示面板及其製造方法 |
CN114068503A (zh) | 2020-08-10 | 2022-02-18 | 深超光电(深圳)有限公司 | 微型led显示面板及其制备方法 |
TWI752595B (zh) * | 2020-08-18 | 2022-01-11 | 東捷科技股份有限公司 | 自發光畫素裝置 |
CN115692572A (zh) * | 2022-09-23 | 2023-02-03 | 业成科技(成都)有限公司 | Led晶圆、电路板、显示器及其制备方法 |
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CN1855407A (zh) * | 2005-04-21 | 2006-11-01 | C.R.F.阿西安尼顾问公司 | 用于制造具有发光二极管(led)的透明器件的方法 |
CN103456729A (zh) * | 2013-07-26 | 2013-12-18 | 利亚德光电股份有限公司 | 发光二极管显示屏 |
KR20140030887A (ko) * | 2012-09-04 | 2014-03-12 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
US20140091993A1 (en) * | 2009-12-09 | 2014-04-03 | Nano And Advanced Materials Institute Limited | Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology |
CN104584110A (zh) * | 2012-08-21 | 2015-04-29 | Lg电子株式会社 | 使用半导体发光器件的显示装置及其制造方法 |
US20160126224A1 (en) * | 2014-10-29 | 2016-05-05 | Lg Electronics Inc. | Display device using semiconductor light emitting device and method of fabricating the same |
US20180047876A1 (en) * | 2014-06-14 | 2018-02-15 | Hiphoton Co., Ltd | Light engine array |
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EP1658642B1 (en) * | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
US20080308819A1 (en) * | 2007-06-15 | 2008-12-18 | Tpo Displays Corp. | Light-Emitting Diode Arrays and Methods of Manufacture |
TWI548058B (zh) * | 2010-04-19 | 2016-09-01 | 鴻海精密工業股份有限公司 | Led陣列封裝結構及其製造方法 |
CN103227274B (zh) * | 2012-01-31 | 2015-09-16 | 长春藤控股有限公司 | 发光二极管晶元封装体及其制造方法 |
CN104009187A (zh) * | 2014-05-29 | 2014-08-27 | 四川虹视显示技术有限公司 | 一种多色有机发光二极管照明装置 |
-
2017
- 2017-08-02 TW TW106126073A patent/TWI640109B/zh not_active IP Right Cessation
- 2017-08-09 CN CN201780042680.5A patent/CN109478547A/zh active Pending
- 2017-08-09 WO PCT/CN2017/096604 patent/WO2018028593A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1855407A (zh) * | 2005-04-21 | 2006-11-01 | C.R.F.阿西安尼顾问公司 | 用于制造具有发光二极管(led)的透明器件的方法 |
US20140091993A1 (en) * | 2009-12-09 | 2014-04-03 | Nano And Advanced Materials Institute Limited | Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology |
CN104584110A (zh) * | 2012-08-21 | 2015-04-29 | Lg电子株式会社 | 使用半导体发光器件的显示装置及其制造方法 |
KR20140030887A (ko) * | 2012-09-04 | 2014-03-12 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
CN103456729A (zh) * | 2013-07-26 | 2013-12-18 | 利亚德光电股份有限公司 | 发光二极管显示屏 |
US20180047876A1 (en) * | 2014-06-14 | 2018-02-15 | Hiphoton Co., Ltd | Light engine array |
US20160126224A1 (en) * | 2014-10-29 | 2016-05-05 | Lg Electronics Inc. | Display device using semiconductor light emitting device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
WO2018028593A1 (zh) | 2018-02-15 |
TW201806191A (zh) | 2018-02-16 |
TWI640109B (zh) | 2018-11-01 |
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