CN109478015B - 有机层组成物及图案形成方法 - Google Patents

有机层组成物及图案形成方法 Download PDF

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Publication number
CN109478015B
CN109478015B CN201680087729.4A CN201680087729A CN109478015B CN 109478015 B CN109478015 B CN 109478015B CN 201680087729 A CN201680087729 A CN 201680087729A CN 109478015 B CN109478015 B CN 109478015B
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chemical formula
organic layer
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Chinese (zh)
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CN109478015A (zh
Inventor
南沇希
姜善惠
金瑆焕
郑瑟基
金旼秀
文秀贤
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201680087729.4A 2016-07-28 2016-10-18 有机层组成物及图案形成方法 Active CN109478015B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2016-0096279 2016-07-28
KR1020160096279A KR102296794B1 (ko) 2016-07-28 2016-07-28 유기막 조성물 및 패턴형성방법
PCT/KR2016/011703 WO2018021619A1 (ko) 2016-07-28 2016-10-18 유기막 조성물 및 패턴형성방법

Publications (2)

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CN109478015A CN109478015A (zh) 2019-03-15
CN109478015B true CN109478015B (zh) 2022-04-12

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KR (1) KR102296794B1 (ko)
CN (1) CN109478015B (ko)
TW (1) TWI639056B (ko)
WO (1) WO2018021619A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102037818B1 (ko) * 2016-11-10 2019-10-29 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴형성방법
KR102383692B1 (ko) * 2017-06-30 2022-04-05 동우 화인켐 주식회사 하드마스크용 조성물
KR102244470B1 (ko) 2018-07-18 2021-04-23 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법

Citations (5)

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JP2014149501A (ja) * 2013-02-04 2014-08-21 Fuji Xerox Co Ltd 画像形成装置、およびプロセスカートリッジ
CN104749880A (zh) * 2013-12-31 2015-07-01 三星Sdi株式会社 硬掩膜组合物和使用硬掩膜组合物形成图案的方法
WO2015118769A1 (ja) * 2014-02-05 2015-08-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、フォトマスク、パターン形成方法、電子デバイスの製造方法、電子デバイス、化合物、及び、化合物の製造方法
CN104926748A (zh) * 2014-03-19 2015-09-23 三星Sdi株式会社 用于硬掩模组合物的单体和包含此单体的硬掩模组合物及使用硬掩模组合物形成图案的方法
CN105093834A (zh) * 2014-05-16 2015-11-25 三星Sdi株式会社 硬掩模组成物和使用所述硬掩模组成物形成图案的方法

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EP1130468A3 (en) * 2000-02-25 2003-07-30 Shipley Company LLC Polymer and photoresist compositions
KR100360308B1 (ko) * 2000-07-03 2002-11-18 한국화학연구원 아세틸렌기를 포함하는 유기화합물, 그 화합물을 이용한증착중합법, 그 방법에 의하여 제조된 증착중합 박막 및그 박막을 사용한 전기 발광소자
US8337982B2 (en) * 2004-12-28 2012-12-25 Sumitomo Bakelite Co., Ltd. Benzoxazole resin precursor, polybenzoxazole resin, resin film and semiconductor device
KR20090004969A (ko) * 2006-03-29 2009-01-12 스미토모 베이클리트 컴퍼니 리미티드 수지 조성물, 바니시, 수지막 및 그것을 이용한 반도체 장치
JP4877101B2 (ja) * 2007-07-02 2012-02-15 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びパターン形成方法
CN101693667B (zh) * 2009-10-23 2012-12-26 中国科学院化学研究所 芳香族四胺及其衍生物以及它们的制备方法与应用
JP6641879B2 (ja) 2015-03-03 2020-02-05 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014149501A (ja) * 2013-02-04 2014-08-21 Fuji Xerox Co Ltd 画像形成装置、およびプロセスカートリッジ
CN104749880A (zh) * 2013-12-31 2015-07-01 三星Sdi株式会社 硬掩膜组合物和使用硬掩膜组合物形成图案的方法
WO2015118769A1 (ja) * 2014-02-05 2015-08-13 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、フォトマスク、パターン形成方法、電子デバイスの製造方法、電子デバイス、化合物、及び、化合物の製造方法
CN104926748A (zh) * 2014-03-19 2015-09-23 三星Sdi株式会社 用于硬掩模组合物的单体和包含此单体的硬掩模组合物及使用硬掩模组合物形成图案的方法
CN105093834A (zh) * 2014-05-16 2015-11-25 三星Sdi株式会社 硬掩模组成物和使用所述硬掩模组成物形成图案的方法

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KR102296794B1 (ko) 2021-08-31
KR20180013104A (ko) 2018-02-07
TW201804256A (zh) 2018-02-01
TWI639056B (zh) 2018-10-21
CN109478015A (zh) 2019-03-15
WO2018021619A1 (ko) 2018-02-01

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