CN109475943A - 用有机自由基合成超细金属纳米线 - Google Patents

用有机自由基合成超细金属纳米线 Download PDF

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Publication number
CN109475943A
CN109475943A CN201780034274.4A CN201780034274A CN109475943A CN 109475943 A CN109475943 A CN 109475943A CN 201780034274 A CN201780034274 A CN 201780034274A CN 109475943 A CN109475943 A CN 109475943A
Authority
CN
China
Prior art keywords
metal
reducing agent
benzoin
nanowires
salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780034274.4A
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English (en)
Chinese (zh)
Inventor
杨培东
崔凡
窦乐天
牛志强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California San Diego UCSD
Original Assignee
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California San Diego UCSD filed Critical University of California San Diego UCSD
Publication of CN109475943A publication Critical patent/CN109475943A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0547—Nanofibres or nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/10—Copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
    • B22F2301/255—Silver or gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00—Physical aspects of the powder
    • B22F2304/05—Submicron size particles
    • B22F2304/054—Particle size between 1 and 100 nm

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Materials Engineering (AREA)
CN201780034274.4A 2016-06-02 2017-05-23 用有机自由基合成超细金属纳米线 Pending CN109475943A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662344893P 2016-06-02 2016-06-02
US62/344,893 2016-06-02
US201662419127P 2016-11-08 2016-11-08
US62/419,127 2016-11-08
PCT/US2017/034061 WO2017210026A1 (en) 2016-06-02 2017-05-23 Synthesis of ultra-thin metal nanowires using organic free radicals

Publications (1)

Publication Number Publication Date
CN109475943A true CN109475943A (zh) 2019-03-15

Family

ID=60477988

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780034274.4A Pending CN109475943A (zh) 2016-06-02 2017-05-23 用有机自由基合成超细金属纳米线

Country Status (7)

Country Link
US (1) US20200269323A1 (enExample)
EP (1) EP3463723A4 (enExample)
JP (1) JP2019520479A (enExample)
KR (1) KR20190005242A (enExample)
CN (1) CN109475943A (enExample)
TW (1) TW201816133A (enExample)
WO (1) WO2017210026A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110227815A (zh) * 2019-06-11 2019-09-13 东南大学 一种水分散性金纳米线的制备方法
CN110355359A (zh) * 2019-08-09 2019-10-22 陕西煤业化工技术研究院有限责任公司 一种超细银纳米线及其制备方法
CN111618315A (zh) * 2020-06-04 2020-09-04 厦门大学 一种铜纳米线的制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102022850B1 (ko) 2018-06-05 2019-09-19 (주)자숨 식기 헹굼 세척장치
JP7164391B2 (ja) * 2018-10-22 2022-11-01 トヨタ自動車株式会社 銅ナノワイヤの製造方法
WO2021095054A1 (en) 2019-11-15 2021-05-20 Council Of Scientific And Industrial Research A continuous flow process for the synthesis of metal nanowires using bubble column reactor
KR20240120364A (ko) * 2023-01-31 2024-08-07 동아대학교 산학협력단 고 종횡비의 구리 나노와이어의 제조방법 및 이에 따른 구리 나노와이어

Citations (8)

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CN1377037A (zh) * 2001-02-28 2002-10-30 松下电器产业株式会社 光记录法、其膜、媒体及制法、信息记录再生装置及方法、计算机和视频信号记录再生系统
CN1596382A (zh) * 2002-02-04 2005-03-16 三井化学株式会社 液晶显示单元的制造方法及液晶显示单元用密封剂
JP2007070723A (ja) * 2005-08-10 2007-03-22 Osaka Univ 媒体中に金属ナノ粒子を形成する方法
US20080097066A1 (en) * 2006-10-24 2008-04-24 Shin-Etsu Chemical Co., Ltd. Photocurable and thermosetting coating composition and article having cured coating of such coating composition
CN103025518A (zh) * 2010-07-27 2013-04-03 柯尼卡美能达控股株式会社 气体阻隔性膜、气体阻隔性膜的制造方法及电子器件
CN105102555A (zh) * 2013-02-26 2015-11-25 C3奈米有限公司 熔合金属纳米结构网络和具有还原剂的熔合溶液
WO2016049430A1 (en) * 2014-09-26 2016-03-31 The Regents Of The University Of California Methods to produce ultra-thin metal nanowires for transparent conductors
CN106794659A (zh) * 2014-08-27 2017-05-31 3M创新有限公司 工程周期性结构内纳米颗粒和纳米线的热辅助自组装方法

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KR101345440B1 (ko) * 2007-03-15 2013-12-27 삼성전자주식회사 메조세공 템플릿을 이용한 나노 구조체의 대량 제조방법 및그에 의해 제조된 나노 구조체
US7922787B2 (en) * 2008-02-02 2011-04-12 Seashell Technology, Llc Methods for the production of silver nanowires
JP5306760B2 (ja) * 2008-09-30 2013-10-02 富士フイルム株式会社 透明導電体、タッチパネル、及び太陽電池パネル

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1377037A (zh) * 2001-02-28 2002-10-30 松下电器产业株式会社 光记录法、其膜、媒体及制法、信息记录再生装置及方法、计算机和视频信号记录再生系统
CN1596382A (zh) * 2002-02-04 2005-03-16 三井化学株式会社 液晶显示单元的制造方法及液晶显示单元用密封剂
JP2007070723A (ja) * 2005-08-10 2007-03-22 Osaka Univ 媒体中に金属ナノ粒子を形成する方法
US20080097066A1 (en) * 2006-10-24 2008-04-24 Shin-Etsu Chemical Co., Ltd. Photocurable and thermosetting coating composition and article having cured coating of such coating composition
CN103025518A (zh) * 2010-07-27 2013-04-03 柯尼卡美能达控股株式会社 气体阻隔性膜、气体阻隔性膜的制造方法及电子器件
CN105102555A (zh) * 2013-02-26 2015-11-25 C3奈米有限公司 熔合金属纳米结构网络和具有还原剂的熔合溶液
CN106794659A (zh) * 2014-08-27 2017-05-31 3M创新有限公司 工程周期性结构内纳米颗粒和纳米线的热辅助自组装方法
WO2016049430A1 (en) * 2014-09-26 2016-03-31 The Regents Of The University Of California Methods to produce ultra-thin metal nanowires for transparent conductors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110227815A (zh) * 2019-06-11 2019-09-13 东南大学 一种水分散性金纳米线的制备方法
CN110355359A (zh) * 2019-08-09 2019-10-22 陕西煤业化工技术研究院有限责任公司 一种超细银纳米线及其制备方法
CN111618315A (zh) * 2020-06-04 2020-09-04 厦门大学 一种铜纳米线的制备方法

Also Published As

Publication number Publication date
US20200269323A1 (en) 2020-08-27
KR20190005242A (ko) 2019-01-15
TW201816133A (zh) 2018-05-01
EP3463723A4 (en) 2020-01-15
WO2017210026A1 (en) 2017-12-07
JP2019520479A (ja) 2019-07-18
EP3463723A1 (en) 2019-04-10

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Application publication date: 20190315