CN109461774A - A kind of HEMT device of the block containing high dielectric coefficient medium - Google Patents
A kind of HEMT device of the block containing high dielectric coefficient medium Download PDFInfo
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- CN109461774A CN109461774A CN201811293318.8A CN201811293318A CN109461774A CN 109461774 A CN109461774 A CN 109461774A CN 201811293318 A CN201811293318 A CN 201811293318A CN 109461774 A CN109461774 A CN 109461774A
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- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 238000005036 potential barrier Methods 0.000 description 11
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004047 hole gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Junction Field-Effect Transistors (AREA)
Abstract
A kind of HEMT device of the block containing high dielectric coefficient medium, belongs to technical field of semiconductors.Including substrate, buffer layer, barrier layer, grid, source electrode and drain electrode, buffer layer and barrier layer are set gradually on substrate, the interface of barrier layer and buffer layer contacts forms two-dimentional conducting channel；Source electrode and drain electrode is separately positioned on HEMT device two sides and forms Ohmic contact with two-dimentional conducting channel；Grid is set between source electrode and drain electrode, and grid is located on barrier layer and barrier layer formation Schottky contacts；The region being located between grid and drain electrode on barrier layer is provided with multiple high dielectric coefficient medium blocks, multiple high dielectric coefficient medium blocks connect with grid respectively and extend along grid leak direction, grid and multiple high dielectric coefficient medium blocks form comb finger, and high dielectric coefficient medium block is not directly connected with drain electrode and dielectric coefficient is greater than the dielectric coefficient of barrier layer.HEMT device proposed by the present invention has the characteristics that high-breakdown-voltage, can satisfy the application of high working voltage and output power.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of high electron mobility transistor (HEMT), and in particular to one
The HEMT device of kind block containing high dielectric coefficient medium.
Background technique
In radio frequency, power integrated circuit field, the characteristics such as frequency, pressure resistance, the conducting resistance of device are to determine circuit characteristic
Important performance indexes, now with power integrated circuit integrated level be continuously improved, power integrated circuit is to circuit and device
Every characteristic requirement it is also higher and higher.In RF power device, due to HEMT (high electron mobility transistor) device
Compared to other power devices, has the characteristics that ultrahigh speed, low-power consumption, low noise (especially at low temperature), greatly meet super
Specific demand in the purposes such as high-speed computer and signal processing, satellite communication, so HEMT device is widely paid attention to.
The rapid development of radio frequency, power integrated circuit also has increasing need for can satisfy higher frequency, bigger voltage endurance
Power device.As New-generation microwave and millimetric wave device, HEMT device is either in frequency, gain still in terms of efficiency
All show impayable advantage.By the development more than 10 years, HEMT has had been provided with excellent microwave, millimeter wave property,
Have become the microwave and millimeter wave low-noise amplifier in the fields such as the satellite communication, radio astronomy, electronics strategy of 2-100GHz
Main devices.For traditional HEMT device, the schematic perspective view of device as shown in Figure 1, from substrate up according to
Secondary is buffer layer and barrier layer, and buffer layer and barrier layer form two-dimensional electron gas or two-dimensional hole gas.Wherein grid is located at potential barrier
Layer top forms a Schottky contacts, two-dimensional electron gas or Two-Dimensional Hole in source electrode and drain electrode and hetero-junctions 4 with barrier layer
Gas forms Ohmic contact.HEMT controls two-dimensional electron gas or two dimension sky in hetero-junctions by the Schottky barrier below grid
The concentration of cave gas realizes control electric current.Since two-dimensional electron gas or two-dimensional hole gas exist with the impurity center being in barrier layer
It is spatially separation, then is not influenced by ionized impurity scattering, therefore its mobility is very high.However, under device working condition,
Since the field distribution between grid and drain electrode is concentrated, it is easy to reduce at the Area generation electric field peak so as to cause breakdown electric field,
Limit the peak power output of HEMT device.
Summary of the invention
For the shortcoming that breakdown potential existing for above-mentioned tradition HEMT is forced down, the invention proposes one kind to contain high dielectric system
The HEMT device of number medium block, can effectively improve the breakdown voltage of HEMT device, to make HEMT device proposed by the present invention
It can satisfy the application of more high working voltage and output power.
The technical solution of the present invention is as follows:
A kind of HEMT device of the block containing high dielectric coefficient medium, including substrate 1, buffer layer 2, barrier layer 3, grid 4, source electrode
5 and drain electrode 6, buffer layer 2 and barrier layer 3, the interface that the barrier layer 3 is contacted with buffer layer 2 are set gradually on the substrate 1
Form two-dimentional conducting channel 9；
The source electrode 5 and drain electrode 6 are separately positioned on the HEMT device two sides and are formed with the two-dimentional conducting channel 9
Ohmic contact；
The grid 4 is set between the source electrode 5 and drain electrode 6, and the grid 4 be located on the barrier layer 3 with it is described
Barrier layer 3 forms Schottky contacts；
The region being located between grid 4 and drain electrode 6 on the barrier layer 3 is provided with multiple high dielectric coefficient medium blocks 7, institute
Multiple high dielectric coefficient medium blocks 7 are stated to connect with the grid 4 and extend respectively along grid leak direction, the grid 4 with it is described more
A high dielectric coefficient medium block 7 forms comb finger, and the high dielectric coefficient medium block 7 is not directly contacted with the drain electrode 6,
The dielectric coefficient of the high dielectric coefficient medium block 7 is greater than the dielectric coefficient of the barrier layer 3.
Specifically, filling dielectric 8 between the multiple high dielectric coefficient medium block 7.
Specifically, the high dielectric coefficient medium block 7 is connect with the grid 4 by dielectric layer.
Specifically, the dielectric 8 extends to 6 directions of the drain electrode, in the high dielectric coefficient medium block 7 and drain electrode
Partly or entirely fill dielectric 8 in region between 6.
The operation principle of the present invention is that:
Since electric field line is invariably prone to pass through from the higher material of dielectric constant, and high dielectric coefficient medium block 7
Dielectric constant be greater than barrier layer 3 dielectric constant, therefore apply in HEMT device higher leakage press when, have a large amount of electric field lines from
The interface of the entrance high dielectric coefficient medium block 7 of barrier layer 3, barrier layer 3 and high dielectric coefficient medium block 7 can be lured by Interface electric field
Raw a large amount of interface negative electrical charge, these interface negative electrical charges, which can have the channel two-dimensional electron gas in two-dimentional conducting channel 9, exhausts work
With；Again since interface negative electrical charge surface density can increase with the raising of leakage pressure, so that two-dimensional electron gas below gradually consumes
Depletion region is formed to the greatest extent, and the depletion region of this new formation, which can serve as resistance to pressure area, to be played the role of improving breakdown voltage.
The invention has the benefit that HEMT device proposed by the present invention has the characteristics that high-breakdown-voltage, can satisfy
The application of high working voltage and output power；Have the characteristics that conducting resistance is small and it is small to introduce additional capacitor simultaneously；Of the invention
Drain voltage influences vicinity field distribution small.
Detailed description of the invention
Fig. 1 is the schematic perspective view of traditional HEMT device.
Fig. 2 is multiple high dielectric coefficient mediums in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention
The realization structural schematic diagram that block 7 is uniformly distributed and extends along grid leak direction.
Fig. 3 is multiple high dielectric coefficient mediums in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention
The realization structural schematic diagram of dielectric 8 is filled between block 7.
Fig. 4 be in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention dielectric 8 to 6 sides that drain
To the realization structural schematic diagram for extending and not contacted with drain electrode 6.
Fig. 5 be in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention dielectric 8 to 6 sides that drain
To the realization structural schematic diagram for extending and being contacted with drain electrode 6.
Fig. 6 is multiple high dielectric coefficient mediums in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention
The schematic perspective view of depletion region is formed below block 7.
Fig. 7 is multiple high dielectric coefficient mediums in a kind of HEMT device of the block containing high dielectric coefficient medium proposed by the present invention
The depletion region schematic perspective view extending transversely finally to join together of 7 lower section of block.
Fig. 8 is the cross-sectional view for forming GaN buffer layer 10 in embodiment above substrate 1.
Fig. 9 is the cross-sectional view for forming AlGaN potential barrier 11 in embodiment above GaN buffer layer 10.
Figure 10 is that production forms the source electrode 5 of Ohmic contact and the cross-sectional view of drain electrode 6 with GaN buffer layer 10 in embodiment.
Figure 11 is the cross-sectional view for forming grid 4 in embodiment above AlGaN potential barrier 11.
Figure 12 is that region overlay high-dielectric coefficient is situated between 11 upper gate 4 of AlGaN potential barrier and drain electrode 6 in embodiment
The schematic perspective view of matter.
Figure 13 is that the stereochemical structure that etching high dielectric coefficient medium forms multiple high dielectric coefficient medium blocks 7 in embodiment is shown
It is intended to.
Appended drawing reference: 1- substrate, 2- buffer layer, 3- barrier layer, 4- grid, 5- source electrode, 6- drain electrode, 7- high-dielectric coefficient are situated between
Mass, 8- dielectric, 9- two dimension conducting channel, 10-GaN buffer layer, 11-AlGaN barrier layer.
Specific embodiment
The technical schemes of the invention are described in detail in the following with reference to the drawings and specific embodiments.
A kind of HEMT device of block containing high dielectric coefficient medium proposed by the present invention, including substrate 1, buffer layer 2, barrier layer
3, grid 4, source electrode 5 and drain electrode 6, set gradually buffer layer 2 and barrier layer 3, the boundary that barrier layer 3 is contacted with buffer layer 2 on substrate 1
Two-dimentional conducting channel 9 is formed at face；Source electrode 5 and drain electrode 6 be separately positioned on HEMT device two sides and with two-dimentional 9 shape of conducting channel
At Ohmic contact；Grid 4 is set between source electrode 5 and drain electrode 6, and grid 4 is located on barrier layer 3 and the formation Schottky of barrier layer 3
Contact；The region being located between grid 4 and drain electrode 6 on barrier layer 3 is provided with multiple high dielectric coefficient medium blocks 7, each Gao Jie
One end of electrostrictive coefficient medium block 7 connects grid 4, and the other end extends along grid leak direction, multiple high dielectric coefficient medium blocks 7 and grid
4 constitute comb finger, as shown in Fig. 2, wherein the connection type of high dielectric coefficient medium block 7 and grid 4 includes being directly connected to,
Or it is indirectly connected with by one layer of film dielectric layer.
The dielectric coefficient of high dielectric coefficient medium block 7 needs the dielectric coefficient greater than barrier layer 3, so that in barrier layer 3
Electric field line is able to enter in high dielectric coefficient medium block 7.Refer to again since multiple high dielectric coefficient medium blocks 7 constitute comb with grid 4
Shape structure makes high dielectric coefficient medium block 7 without all covering the whole region between 3 upper gate 4 of barrier layer and drain electrode 6,
So that the region the being not covered with not influence by high dielectric coefficient medium block 7, to reduce conducting resistance, and reduces and draws
The additional capacitor entered.
In some embodiments, dielectric 8 can be filled between multiple high dielectric coefficient medium blocks 7, such as Fig. 3 institute
Show, dielectric 8 can be directly connected to grid 4 or be connect by one layer of film dielectric layer；Dielectric 8 can be to 6 sides that drain
To extension, as shown in Figure 4 and Figure 5；High dielectric coefficient medium block 76 is not directly connected with drain electrode, high dielectric coefficient medium block 7 with
It can be not provided with any medium as shown in Figure 2 between drain electrode 6 or the dielectric of extension 8 is not contacted into drain electrode 6 as shown in Figure 4,
Dielectric 8 can also be extended to as shown in Figure 5 and be connect with drain electrode 6 so that leading between high dielectric coefficient medium block 7 and drain electrode 6
Dielectric 8 is crossed to be indirectly connected with；Since high dielectric coefficient medium block 7 does not contact directly with drain electrode 6,6 pairs of leakages of drain electrode can be reduced
The influence of 6 near zone field distribution of pole.
Below with reference to Fig. 6 and Fig. 7 course of work that the present invention will be described in detail.
For traditional HEMT device, when drain electrode applies high voltage, since the drift region between grid leak is difficult to consume completely
To the greatest extent, voltage is caused mainly to drop near gate edge, this just will form very big electric field peak, so that device breakdown.
A kind of HEMT device of block containing high dielectric coefficient medium proposed by the present invention between grid 4 and drain electrode 6 due to setting
High dielectric coefficient medium block 7 is set, and the dielectric coefficient of high dielectric coefficient medium block 7 is greater than the dielectric coefficient of barrier layer 3, due to
Electric field line is invariably prone to pass through from the higher material of dielectric constant, therefore applies in the drain electrode of HEMT device proposed by the present invention
When higher leakage being added to press, a large amount of electric field lines are had from barrier layer 3 and enter high dielectric coefficient medium block 7, in barrier layer 3 and high dielectric system
The interface of number 7 this materials at two layers of medium block can be induced a large amount of interface negative electrical charge by Interface electric field, this layer of negative electrical charge can be to ditch
Road two-dimensional electron gas has depletion action.
Again since interface negative electrical charge surface density can increase with the raising of leakage pressure, this makes high dielectric coefficient medium block 7
The two-dimensional electron gas of lower section gradually exhausts to form depletion layer, as shown in Figure 6.When leakage pressure is sufficiently high, each high-dielectric coefficient is situated between
The depletion region of 7 lower section of mass can be extending transversely, so that the two dimension electricity of the lower section in the region between each high dielectric coefficient medium block 7
Sub- gas is also depleted, and the depletion region of 7 lower section of high dielectric coefficient medium block each in this way can join together, and forming one is approximately square
Large stretch of depletion region of shape, as shown in Figure 7.The depletion region of this new formation can play the role of resistance to pressure area, due to high dielectric system
Number medium block 7 and the direct or indirect connection of grid 3, so that concentrating the voltage for dropping to gate edge greatly to be expanded originally
Exhibition, makes the drift region electric field peak between grid leak be effectively suppressed, to improve the breakdown voltage of device, makes the resistance to pressure energy of device
Power significantly improves.
A kind of manufacturing method for manufacturing HEMT device of the invention is given as shown in Fig. 8 to Figure 13, the present embodiment is not to have
For the GaN base HEMT device for having filling dielectric 8, GaN base HEMT device in the present embodiment is described in detail in conjunction with attached drawing
Manufacturing process includes the following steps:
Step 1 grows GaN buffer layer 10 on substrate 1, as shown in Figure 8.
Step 2 grows AlGaN potential barrier 11, GaN buffer layer 10 and 11 interface of AlGaN potential barrier in GaN buffer layer 10
Form two-dimentional conducting channel 9, there are two-dimensional electron gas in two-dimentional conducting channel 9, as shown in Figure 9.
Step 3 carries out mesa etch making devices active area, then prepares source electrode 5 and drain electrode 6 in mesa surfaces, and
So that source electrode 5 and drain electrode 6 form ohm with the two-dimentional conducting channel 9 of 11 interface of GaN buffer layer 10 and AlGaN potential barrier respectively
Contact, as shown in Figure 10.
Step 4 makes grid 4 above AlGaN potential barrier 11, as shown in figure 11.
Step 5, region overlay high dielectric coefficient medium block 7 arrives between 11 upper gate 4 of AlGaN potential barrier and drain electrode 6
Suitable thickness, as shown in figure 12.
Step 6, graphical etching high dielectric coefficient medium block 7 are to 11 surface of AlGaN potential barrier, so that in AlGaN potential barrier
11 top of layer forms multiple be uniformly distributed and along the high dielectric coefficient medium block 7 that grid leak direction extends, high dielectric coefficient medium
Block 7 is not directly connected with drain electrode 6, and subsequent technique is consistent with existing HEMT manufacture craft, finally obtains the GaN base of the present embodiment
HEMT device, as shown in figure 13.
Those skilled in the art disclosed the technical disclosures can make various do not depart from originally according to the present invention
Various other specific variations and combinations of essence are invented, these variations and combinations are still within the scope of the present invention.
Claims (3)
1. a kind of HEMT device of block containing high dielectric coefficient medium, including substrate (1), buffer layer (2), barrier layer (3), grid
(4), source electrode (5) and drain electrode (6), set gradually buffer layer (2) and barrier layer (3), the barrier layer (3) on the substrate (1)
The interface contacted with buffer layer (2) forms two-dimentional conducting channel (9)；
The source electrode (5) and drain electrode (6) be separately positioned on the HEMT device two sides and with described two-dimentional conducting channel (9) shape
At Ohmic contact；
It is arranged the grid (4) between the source electrode (5) and drain electrode (6), and the grid (4) is located on the barrier layer (3)
Schottky contacts are formed with the barrier layer (3)；
It is characterized in that, the region being located between grid (4) and drain electrode (6) on the barrier layer (3) is provided with multiple high dielectrics
Index medium block (7), the multiple high dielectric coefficient medium block (7) connect with the grid (4) respectively and prolong along grid leak direction
It stretches, the grid (4) and the multiple high dielectric coefficient medium block (7) form comb finger, the high dielectric coefficient medium
Block (7) is not directly contacted with the drain electrode (6), and the dielectric coefficient of the high dielectric coefficient medium block (7) is greater than the barrier layer
(3) dielectric coefficient.
2. the HEMT device of the block according to claim 1 containing high dielectric coefficient medium, which is characterized in that the multiple Gao Jie
Dielectric (8) are filled between electrostrictive coefficient medium block (7).
3. the HEMT device of the block according to claim 2 containing high dielectric coefficient medium, which is characterized in that the dielectric
(8) extend to drain electrode (6) direction, the region part or complete between the high dielectric coefficient medium block (7) and drain electrode (6)
Fill dielectric (8) in portion.
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| CN201811293318.8A CN109461774B (en) | 2018-11-01 | 2018-11-01 | HEMT device containing high dielectric coefficient dielectric block |
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| CN201811293318.8A CN109461774B (en) | 2018-11-01 | 2018-11-01 | HEMT device containing high dielectric coefficient dielectric block |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071172A (en) * | 2019-04-28 | 2019-07-30 | 苏州汉骅半导体有限公司 | Semiconductor devices and its manufacturing method |
| CN110649096A (en) * | 2019-10-08 | 2020-01-03 | 电子科技大学 | High-voltage n-channel HEMT device |
| CN110649097A (en) * | 2019-10-08 | 2020-01-03 | 电子科技大学 | High-voltage p-channel HEMT device |
| CN110660851A (en) * | 2019-10-08 | 2020-01-07 | 电子科技大学 | High-voltage n-channel HEMT device |
| CN110660843A (en) * | 2019-10-08 | 2020-01-07 | 电子科技大学 | High-voltage p-channel HEMT device |
| CN113257910A (en) * | 2021-05-11 | 2021-08-13 | 华南师范大学 | HEMT radio frequency device with comb-type gate structure and preparation method thereof |
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| CN101017854A (en) * | 2006-12-31 | 2007-08-15 | 电子科技大学 | GaN base transistor with high electronic transfer rate |
| US20090250723A1 (en) * | 2004-09-28 | 2009-10-08 | John Kevin Twynam | Electronic Device and Heterojunction FET |
| CN105185827A (en) * | 2015-09-08 | 2015-12-23 | 东南大学 | AlGaN/GaN high-electron-mobility power semiconductor device |
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| US20090250723A1 (en) * | 2004-09-28 | 2009-10-08 | John Kevin Twynam | Electronic Device and Heterojunction FET |
| CN101017854A (en) * | 2006-12-31 | 2007-08-15 | 电子科技大学 | GaN base transistor with high electronic transfer rate |
| CN105185827A (en) * | 2015-09-08 | 2015-12-23 | 东南大学 | AlGaN/GaN high-electron-mobility power semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071172A (en) * | 2019-04-28 | 2019-07-30 | 苏州汉骅半导体有限公司 | Semiconductor devices and its manufacturing method |
| CN110071172B (en) * | 2019-04-28 | 2022-03-18 | 苏州汉骅半导体有限公司 | Semiconductor device and method for manufacturing the same |
| CN110649096A (en) * | 2019-10-08 | 2020-01-03 | 电子科技大学 | High-voltage n-channel HEMT device |
| CN110649097A (en) * | 2019-10-08 | 2020-01-03 | 电子科技大学 | High-voltage p-channel HEMT device |
| CN110660851A (en) * | 2019-10-08 | 2020-01-07 | 电子科技大学 | High-voltage n-channel HEMT device |
| CN110660843A (en) * | 2019-10-08 | 2020-01-07 | 电子科技大学 | High-voltage p-channel HEMT device |
| CN110649096B (en) * | 2019-10-08 | 2021-06-04 | 电子科技大学 | High-voltage n-channel HEMT device |
| CN113257910A (en) * | 2021-05-11 | 2021-08-13 | 华南师范大学 | HEMT radio frequency device with comb-type gate structure and preparation method thereof |
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| CN109461774B (en) | 2021-08-17 |
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