CN109426094B - Exposure method, measurement method, and exposure apparatus - Google Patents
Exposure method, measurement method, and exposure apparatus Download PDFInfo
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- CN109426094B CN109426094B CN201710774884.XA CN201710774884A CN109426094B CN 109426094 B CN109426094 B CN 109426094B CN 201710774884 A CN201710774884 A CN 201710774884A CN 109426094 B CN109426094 B CN 109426094B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
Abstract
The invention provides an exposure method, a measurement method and an exposure device, wherein the exposure method comprises the following steps: obtaining vertical orthogonal polynomial movement tracks of a workpiece table, a mask table and a projection objective; obtaining the horizontal orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective; and transmitting the track coefficients of the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track to the actuating mechanism. In the exposure method, the measurement method and the exposure device provided by the invention, the exposure method obtains the distortion information of the surface shape information of the mask plate and the substrate, the position track coefficients of the workpiece table, the mask table and the space image are obtained through resolving according to the coordinate system relation, the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track are determined through the compensation of the projection objective, the total surface shape compensation quantity of the workpiece table and the total grid deformation compensation quantity of the workpiece table, and the planned track is synchronously executed through the execution mechanism during exposure, so that the exposure precision is ensured.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to an exposure method, a measurement method, and an exposure apparatus.
Background
The manufacturing technology of flat panel display devices in semiconductor manufacturing is characterized in that projection lithography is used as a core, processes such as film forming, gluing, developing and etching are matched, and the processes are circulated for many times, so that the photoelectric display devices with micron-sized dimensions are finally formed on a glass substrate and are arranged into a dense array within the range of micron-sized dimensions.
The development trend of flat panel display devices is twofold: the first is a more compact, fine cell display device to achieve higher display resolution; the second is a larger size display area. This trend places higher demands on projection lithography machines. The essence of the lithography technology with an exposure device as a core is cross-size micro-nano manufacturing, namely, a macro means is used for rapidly manufacturing a micro-nano structure on a large-size material, the larger the size span is, the larger the challenge is, the more the technical problems need to be processed, and further, various new technical methods are needed to overcome the engineering problems of the whole and the key parts of the lithography equipment.
When large-size materials are used in semiconductor manufacturing in the prior art, uncontrollable factors are often generated due to deformation of the materials, especially a mask plate in the photoetching technology, the mask plate has high requirements on an exposure device, and the deformation generated by the mask plate affects the exposure result, so that the exposure accuracy is insufficient, and the product quality is affected. Therefore, how to obtain better exposure accuracy is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide an exposure method, a measurement method and an exposure device, which solve the problem of insufficient exposure accuracy.
The exposure method provided by the invention comprises the following steps:
arranging a mask plate on a mask table, and arranging a substrate on a workpiece table;
measuring the multi-point height of the upper surface of the substrate, and performing plane fitting to obtain the height and an inclined set value of the overall leveling workpiece table so as to enable the upper surface of the substrate to coincide with a focal plane;
measuring to obtain surface shape information and distortion information of the pattern surface of the mask plate;
measuring to obtain the focal plane information of the projection objective;
measuring to obtain surface shape information and distortion information of the substrate;
obtaining a surface shape coefficient of the pattern surface of the mask plate, a surface shape coefficient of the upper surface of the substrate and a distortion coefficient of the pattern surface of the mask plate relative to the surface to be exposed of the substrate through two-dimensional orthogonal polynomial coefficient fitting;
according to the relative coordinate system relationship among the workpiece table, the mask table and the projection objective layout, resolving the surface shape coefficient of the graphic surface, the surface shape coefficient of the upper surface and the distortion coefficient of the surface to be exposed into position track coefficients of the workpiece table, the mask table and a space image;
decomposing the surface shape of the substrate into a two-dimensional orthogonal polynomial expression, compensating 0-order quantity, 1-order quantity and 1-order cross quantity of the surface shape of the substrate by the workpiece platform, and compensating high-order quantity of the surface shape of the substrate by the projection objective;
resolving the distortion of the substrate into a two-dimensional orthogonal polynomial expression, and compensating the distortion of the substrate within three orders by a photoetching machine;
splitting the compensation quantity of the surface shape of the mask plate, compensating 0-3 order quantity of distortion of the mask plate by the mask table, and compensating 1-3 order correction residual quantity caused by splicing of the objective lens by the projection objective lens;
disassembling the grid of the substrate into a two-dimensional orthogonal polynomial expression, compensating 0-order quantity, 1-order quantity and 1-order crossing quantity of the grid of the substrate by the workpiece stage, and compensating high-order quantity of the grid of the substrate by the projection objective;
disassembling the grid of the mask plate into a two-dimensional orthogonal polynomial expression, compensating 0-3 order quantity of the grid of the mask plate by the mask table, and compensating 1-3 order correction residual quantity caused by splicing of the objective lens by the projection objective lens;
combining the compensation quantity of the workpiece table to the surface shape of the mask plate and the compensation quantity of the substrate to obtain the total surface shape compensation quantity of the workpiece table, and performing orthogonal polynomial fitting on the surface shape compensation quantities of the workpiece table, the mask table and the projection objective to obtain vertical orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective;
combining the compensation quantity of the workpiece table to the grid of the mask plate and the compensation quantity of the grid of the substrate to obtain the total grid deformation compensation quantity of the workpiece table, and performing orthogonal polynomial fitting on the grid deformation compensation quantities of the workpiece table, the mask table and the projection objective to obtain the horizontal orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective;
and sending track coefficients of the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track to an executing mechanism, and synchronously executing the planned track by the executing mechanism during exposure.
Optionally, in the exposure method, the position trajectory coefficient of the aerial image is converted into a joint trajectory coefficient of a plurality of movable mechanisms inside the projection objective according to a sensitivity matrix of the projection objective.
Optionally, in the exposure method, the high-order quantity of the projection objective for compensating the surface shape of the substrate is formed by splicing the respective low-order compensation quantities of the unit projection objectives.
Optionally, in the exposure method, the high-order compensation amount of the projection objective for compensating the grid of the substrate is formed by splicing the respective low-order compensation amounts of the unit projection objectives.
Optionally, in the exposure method, the mask stage is provided with a mask shaping device, and the mask plate is shaped by the mask shaping device.
Optionally, the mask shaping device includes a shaping cover, the shaping cover includes a cover body and a sealing ring disposed on the cover body, the cover body has a transparent window, and the cover body covers the mask plate carried by the mask stage and forms a closed space through the sealing ring.
The present invention also provides a measurement method used for the above exposure method, the measurement method including:
the vertical position and the posture of the mask table are kept unchanged in the measuring process, and the height of each position of the mask plate is measured by using a mask measuring system in the middle of the horizontal moving process of the mask table;
synchronously corresponding the horizontal position data of the mask table and the vertical height measured by the mask measuring system, and then carrying out two-dimensional polynomial fitting on the height data in the graphic area range to obtain a surface shape measuring result of the mask plate;
the horizontal position and the posture of the workpiece table are kept unchanged in the measuring process, and the height of each position of the substrate is measured by using a substrate measuring system in the middle of the horizontal moving process of the workpiece table;
synchronously corresponding the horizontal position data of the workpiece platform and the vertical height measured by the substrate measuring system, and then carrying out two-dimensional polynomial fitting on the height data in each exposure field range to obtain the surface shape measuring result of the substrate of each exposure field;
arranging a mask alignment mark in a pattern area of the mask plate, driving the mask alignment mark to be right above a projection objective by a mask table, measuring the offset of the imaging position of the mask alignment mark relative to a nominal position by using a coaxial alignment sensor arranged on the workpiece table, and performing two-dimensional polynomial fitting on the offset based on the nominal position to obtain a distortion measurement result of the mask plate;
driving a reference mark plate of the workpiece table to be right below an off-axis alignment sensor, and measuring horizontal position deviation of the center of the off-axis alignment sensor relative to each corresponding reference mark on the reference mark plate;
manufacturing a substrate alignment mark in each exposure field on the substrate;
the workpiece table drives the substrate alignment mark to be right below the off-axis alignment sensor, the off-axis alignment sensor measures horizontal position deviation of the substrate alignment mark relative to the center of the sensor, offset of the substrate alignment mark relative to a nominal position under a workpiece table coordinate system is obtained after correction, two-dimensional polynomial fitting is carried out on the offset in each exposure field based on the nominal position, and distortion measurement results of the exposure fields are obtained.
Optionally, in the measuring method, the mask alignment mark is in a grid shape; the substrate alignment mark is in a grid shape.
Optionally, in the measurement method, the method further includes: the mask stage drives an object-side reference plate over the projection objective, capturing an aerial image of the marks by a sensor array.
Optionally, in the measurement method, the method further includes: and vertically moving the workpiece platform, acquiring spatial image contrast, and determining the height of the workpiece platform as a measurement result of the focal plane height.
Optionally, in the measurement method, the mask stage is driven by a mask stage driving device, the mask stage driving device includes a first driving device and a second driving device, and a minimum moving distance of the first driving device is 10 times or more a minimum moving distance of the second driving device.
The invention also provides an exposure device, which at least comprises two exposure systems arranged in parallel by adopting the exposure method, wherein each exposure system comprises a mask platform system, a mask shaping system, a workpiece platform system, a mask measuring system, a substrate measuring system, a mask transmission system, a substrate transmission system and a frame system.
In the exposure method, the measurement method and the exposure device provided by the invention, the exposure method obtains the distortion information of the surface shape information of the mask plate and the substrate, the position track coefficients of the workpiece table, the mask table and the space image are obtained through resolving according to the coordinate system relation, and the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track are determined through the compensation of the projection objective, the total surface shape compensation quantity of the workpiece table and the total grid deformation compensation quantity of the workpiece table, so that the planned track is synchronously executed by the executing mechanism during exposure, the whole exposure process is completed, the exposure precision is ensured, and the production quality is improved.
Drawings
FIG. 1 is a schematic structural diagram of an exposure apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a mask shaping device in an embodiment of the present invention.
Detailed Description
To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
The invention provides an exposure method, which comprises the following steps:
setting a mask plate on a mask table, setting a substrate on a workpiece table, connecting the mask transmission system with the mask table system, downloading a batch of mask plates, uploading the batch, adsorbing the mask plate through the mask table system to complete mask plate loading, connecting the substrate transmission system with the workpiece table system, downloading exposed substrates, uploading unexposed substrates, adsorbing the substrates through the workpiece table system to complete substrate loading, wherein an exposure device shown in fig. 1 can be adopted, and comprises a mask shaping device 100, a workpiece table 300 and an illumination device 400, the workpiece table 300 is used for supporting a substrate 500, the illumination device 400 can form exposure light, and the exposure light can expose the substrate 500 after passing through the mask shaping device 100;
the multi-point height of the upper surface of the substrate can be measured by a substrate measuring system, the height and the inclination set value of the overall leveling workpiece platform can be obtained by plane fitting, and the workpiece platform system bears the motion of the substrate to enable the upper surface of the substrate to coincide with a focal plane, for example, the upper surface of the substrate can be caused to coincide with the focal plane with the optimal exposure on the whole;
the mask measuring system can be adopted to measure and obtain the surface shape information and the distortion information of the pattern surface of the mask plate;
the focal plane information of the projection objective can be obtained by adopting a mask measuring system;
the surface shape information and the distortion information of the substrate can be obtained by adopting a substrate measuring system;
on the basis of the surface shape information and distortion information of the pattern surface of the mask plate, the focal plane information of the projection objective and the surface shape information and distortion information of the substrate, the surface shape coefficient of the pattern surface of the mask plate, the surface shape coefficient of the upper surface of the substrate and the distortion coefficient of the pattern surface of the mask plate relative to the surface to be exposed of the substrate are obtained through two-dimensional orthogonal polynomial system fitting;
according to the relative coordinate system relationship among the workpiece table, the mask table and the projection objective layout, the surface shape coefficient of the graphic surface, the surface shape coefficient of the upper surface and the distortion system of the surface to be exposed are disassembled into position track coefficients of the workpiece table, the mask table and the space image, and the track coefficients are established through the coordinate system relationship;
the surface shape of the substrate can be disassembled into a two-dimensional orthogonal polynomial expression through a substrate surface shape compensation model, the workpiece stage compensates the 0-order quantity, the 1-order quantity and the 1-order cross quantity of the surface shape of the substrate in the scanning exposure process, and the projection objective compensates the high-order quantity of the surface shape of the substrate;
resolving the distortion of the substrate into a two-dimensional orthogonal polynomial expression, and compensating the distortion of the substrate within three orders by a photoetching machine;
splitting the compensation quantity of the surface shape of the mask plate through a mask surface shape compensation model, wherein the mask stage compensates 0-3 order quantity of distortion of the mask plate and can contain cross terms, and the projection objective compensates 1-3 order correction residual quantity caused by splicing of the objective;
the grid of the substrate can be disassembled into a two-dimensional orthogonal polynomial expression through a substrate grid compensation model, the workpiece stage compensates the 0-order quantity, the 1-order quantity and the 1-order crossing quantity of the grid of the substrate in the scanning exposure process, and the projection objective compensates the high-order quantity of the grid of the substrate;
the grid of the mask plate can be disassembled into a two-dimensional orthogonal polynomial expression through a mask plate grid compensation model, in the scanning exposure process, 0-3 orders of the grid of the mask plate are compensated by the mask table, cross terms can be contained, and 1-3 orders of correction residual quantity caused by splicing of the objective lens are compensated by the projection objective lens;
combining the compensation quantity of the workpiece table to the surface shape of the mask plate and the compensation quantity of the substrate to obtain the total surface shape compensation quantity of the workpiece table, integrating the compensation quantity on each surface shape, performing orthogonal polynomial fitting on the compensation quantities of the workpiece table, the mask table and the projection objective to obtain vertical orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective, wherein the surface shape is a vertical morphological characteristic, and determining the movement of the workpiece table, the mask table and the projection objective through the vertical orthogonal polynomial motion tracks;
combining the compensation quantity of the workpiece table to the grids of the mask plate and the compensation quantity of the grids of the substrate to obtain the total grid deformation compensation quantity of the workpiece table, integrating the compensation quantity on each grid, and performing orthogonal polynomial fitting on the grid deformation compensation quantities of the workpiece table, the mask table and the projection objective to obtain the horizontal orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective, wherein the grids are horizontal morphological characteristics, and the movement of the workpiece table, the mask table and the projection objective is determined through the horizontal orthogonal polynomial motion tracks;
and sending track coefficients of the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track to an executing mechanism, wherein the executing mechanism can be running mechanisms such as guide rails, mechanical arms and rotating shafts, the executing mechanism moves each device according to the track coefficients, and the executing mechanism synchronously executes the planned track during exposure to finish the exposure process.
In the projection objective, the position track coefficient of the space image is converted into a combined track coefficient of a plurality of movable mechanisms in the projection objective according to the sensitivity matrix of the projection objective, and in order to realize the adjustment of the projection objective, the plurality of movable mechanisms can be arranged in the projection objective, so that the arrangement of the projection objective on an optical path is convenient.
In this embodiment, the projection objective is formed by splicing the respective low-order compensation quantities of the unit projection objectives, and the projection objective is formed by splicing the unit projection objectives, so that the high-order compensation of the surface shape of the substrate can be realized by splicing the low-order compensation quantities of the unit projection objectives.
In this embodiment, the projection objective compensates for the high-order quantities of the grids of the substrate by splicing the low-order compensation quantities of the unit projection objectives, and the high-order quantities of the grids of the substrate can be compensated by splicing the low-order compensation quantities of the unit projection objectives.
In order to improve the precision, the mask stage is provided with a mask reshaping device, the mask plate is reshaped through the mask reshaping device, the deformation of the mask plate is offset through the mask reshaping device, and the mask reshaping device is suitable for large-size mask plates, so that the product quality problem caused by the deformation of the mask is prevented.
As shown in fig. 2, the mask shaping device 100 includes a shaping cover 10, the shaping cover 10 includes a cover body and a sealing ring 11 disposed on the cover body, the cover body has a transparent window 12, the cover body covers the mask plate 30 carried by the mask stage 20 and forms a sealed space through the sealing ring 12, the sealed space is formed by the mask shaping device, so that a pressure difference is formed between the sealed space and the atmosphere to shape the mask plate, when the mask plate deforms after the sealed space is formed, the gas amount of the sealed space is unchanged but the volume is changed, so that a pressure difference between the sealed space and the atmosphere is formed, the sealed space forms a reverse acting force acting on the deformation of the mask plate, so as to prevent the mask plate from sinking and deforming due to the gravity of the mask plate, and the exposure light can pass through the transparent window.
In a specific embodiment, the mask shaping device 100 includes a shaping cover 10 which can be disposed on a mask stage 20, the shaping cover 10 includes a cover body and a sealing ring 11 disposed on the cover body, the cover body has a transparent window 12, the mask stage 20 can be used for carrying a mask 30, the cover body covers the mask 30 carried by the mask stage 20 and can form a closed space through the sealing ring 11, in other embodiments, various manners such as a sealant or a sealing strip can be used to form the closed space, the sealing ring is a preferred manner, in use, an air passage 40 can be further disposed on the shaping cover 10 or the mask stage 20, the air passage 40 is communicated with the closed space, in a specific embodiment, the shaping cover 10 can be disposed on the mask stage 20 to cover the mask 30 to form the closed space, and the closed space can be adjusted and controlled by forming the air passage 40, therefore, the mask plate can meet the requirements of different mask plates, for example, the air passage can be realized by adopting a mode of opening holes or arranging pipelines through a valve and the like.
The mask shaping apparatus can also supply gas including both supply and discharge, that is, both suction and intake, from the gas duct 40 by providing a gas pump. When the mask plate is positioned below the closed space, negative pressure of the closed space relative to the atmosphere (indoor air pressure) is formed by air extraction, so that the atmosphere acts on the mask plate from the outside; when the mask plate is positioned above the closed space, positive pressure of the closed space relative to the atmosphere is formed through air inflow, so that air in the closed space acts on the mask plate from inside, the negative pressure or the positive pressure refers to that the air pressure is lower than or higher than standard atmospheric pressure, namely the atmosphere (indoor air pressure) in the general sense, the atmospheric pressure of the standard atmospheric pressure on the sea level under the standard atmospheric condition is 101.325kPa, and the gravity of the mask plate is balanced through forming air pressure difference on the upper surface and the lower surface of the mask plate, so that the sinking deformation of the mask plate caused by the gravity is effectively counteracted, and the mask plate is especially large-size.
The present invention also provides a measurement method, which can be used for the above exposure method, the measurement method including:
the vertical position and the posture of the mask table are kept unchanged in the measuring process, and the height of each position of the mask plate is measured by using a mask measuring system in the middle of the horizontal moving process of the mask table;
synchronously corresponding the horizontal position data of the mask table and the vertical height measured by the mask measuring system, and then carrying out two-dimensional polynomial fitting on the height data in the graphic area range to obtain a surface shape measuring result of the mask plate;
the vertical position and the posture of the workpiece table are kept unchanged in the measuring process, and the height of each position of the substrate is measured by using a substrate measuring system in the middle of the horizontal moving process of the workpiece table;
synchronously corresponding the horizontal position data of the workpiece platform and the vertical height measured by the substrate measuring system, and then carrying out two-dimensional polynomial fitting on the height data in each exposure field range to obtain the surface shape measuring result of the substrate of each exposure field;
arranging a mask alignment mark in a pattern area of the mask plate, driving the mask alignment mark to be right above a projection objective by the mask table, measuring the offset of the imaging position of the mask alignment mark relative to a nominal position by using a coaxial alignment sensor arranged on the workpiece table, and performing two-dimensional polynomial fitting on the offset based on the nominal position to obtain a distortion measurement result of the mask plate, wherein the nominal position is a theoretical position or a reference position and the like.
Driving a reference mark plate of the workpiece table to be right below an off-axis alignment sensor, and measuring horizontal position deviation of the center of the off-axis alignment sensor relative to each corresponding reference mark on the reference mark plate;
the substrate alignment mark can be made in each exposure field on the substrate between the exposures of the process layer, one or more exposure fields in the process can be used, and when one exposure field is used, only the exposure field needs to be operated;
the workpiece table drives the substrate alignment mark to be right below the off-axis alignment sensor, the off-axis alignment sensor measures horizontal position deviation of the substrate alignment mark relative to the center of the sensor, offset of the substrate alignment mark relative to a nominal position under a workpiece table coordinate system is obtained after correction, two-dimensional polynomial fitting is carried out on the offset in each exposure field based on the nominal position, and distortion measurement results of the exposure fields are obtained.
Optionally, the mask alignment mark is in a grid shape, the substrate alignment mark is in a grid shape, and accurate alignment is achieved through a plurality of grid patterns.
In this embodiment, the measurement method further includes: the mask table drives the object side reference plate to be above the projection objective, the sensor array captures a space image formed by the marks to obtain a corresponding space relation, the object side reference plate can be arranged on the mask table for positioning, and the sensor array can be arranged on the projection objective.
In this embodiment, the measurement method further includes: and vertically moving the workpiece table, acquiring spatial image contrast at different heights, and determining the height of the workpiece table, for example, the height of the workpiece table when the contrast is maximum, as a measurement result of the focal plane height.
For the moving mode of the mask stage, the mask stage driving device drives the mask stage to move the mask shaping device in the vertical mode or the horizontal direction, so as to adjust the position of the mask plate, the mask driving device comprises a first driving device and a second driving device, the minimum moving distance of the first driving device is more than 10 times of the minimum moving distance of the second driving device, for example, the first driving device performs stroke motion, the stroke motion is movement in a large range, the second driving device performs precision position control, the precision position control can move in a small range, for example, the minimum moving distance of the stroke motion is 10, 20, 25, 30 or 40 times of the minimum moving distance of the precision position control, and the minimum moving distance of the second driving device is not limited in the application and is the moving distance which can be reached by the driving device, specifically, it may be 0.01mm, 0.005mm, 0.001mm, 0.0001mm, 0.0005mm, 0.0008mm or the like.
The exposure apparatus is provided with a measuring device, the positional relationship between other devices is measured by the measuring device, the position of the measuring device is set relative to the object to be measured, the measuring device may include a substrate measuring device which can be used to measure the position of the substrate, and a mask plate measuring device which can be used to measure the position of the mask plate, the positional relationship between the substrate and the substrate relative to the workpiece table, etc., can be measured by the substrate measuring device, and the positional relationship between the mask plate and the mask plate relative to the substrate, etc., can be measured by the mask plate measuring device.
The substrate measuring apparatus may further comprise an off-axis measurement array and a substrate profile measurement array, the off-axis measurement array being an arrayed optical measurement device that measures a grid orientation of the substrate, the substrate surface shape measuring array is an arrayed optical measuring device for measuring the surface shape of the substrate, the spatial position of the substrate is measured by an off-axis measurement array, which measures the off-axis quantity and off-axis angle from the marks set on the substrate, the substrate profile measurement array is used to measure the level of the substrate surface, for example by optical interference, two beams of light are emitted by the light source, the two beams of light have the same frequency, one beam of light is reflected by the reference surface, the other beam of light is reflected by the measuring surface, when the two paths of light meet, an interference pattern is generated, the surface shape of the measured object is judged through processing the interference pattern, and the shape data and the position data of multiple points on the surface of the measured object can be obtained. The surface shape in the invention means the shape relationship and data of the upper surface or the lower surface of each material, and the like, and is selected according to different requirements.
Similarly, the mask plate measuring device may include a coaxial measuring array and a mask surface shape measuring array, the coaxial measuring array is an arrayed optical measuring device that measures a grid orientation of the mask plate, and the mask surface shape measuring array is an arrayed optical measuring device that measures a surface shape of the mask plate, so as to measure a positional relationship of the mask plate.
The exposure device is provided with a projection objective lens having an objective lens group 200, the objective lens group 200 can be used for modulating the exposure light after passing through the mask shaping device 100, and the optical path of the exposure light is modulated by adjusting the objective lens in the projection objective lens, so that the exposure optical path requirement is met.
The workpiece table can be provided with a light intensity sensor array, the light intensity sensor array is used for measuring the light intensity of the exposure light reaching the substrate, the light intensity of the substrate on the workpiece table can be detected through a plurality of light intensity sensors forming the array, and abnormal conditions of illumination emitted by the lighting device, such as damage of part of lamps or reduction of light intensity after long-time use, can be found in time.
For accurate positioning, the multi-point height of the surface of the substrate can be measured by a substrate measuring device, and the position of the substrate is adjusted by a driving device of the workpiece table, so that the surface of the substrate is superposed with an exposure focal plane, and the substrate is accurately positioned at a position required by exposure. Since the positional relationship among the devices or materials in the present invention is set relatively, the description of the positional relationship in the general sense is about the relative position.
The exposure method comprises compensation, the compensation methods respectively comprise a substrate compensation method and a mask plate compensation method, the substrate compensation method is used for compensating the distortion of the substrate, the mask plate compensation method is used for compensating the distortion of the mask plate, the distortion is the situation of error which is difficult to avoid in the exposed material, and the like, the slight difference on the material is the distortion due to the production difference, the influence of the environment, the change along with the increase of time and the like, and the substrate and the mask plate in the exposure method are adjusted through the compensation method.
The substrate compensation method comprises substrate surface shape compensation and substrate grid compensation, wherein the substrate surface shape compensation is used for compensating the surface shape of the substrate, and the substrate grid compensation is used for compensating the grid orientation on the substrate; the mask plate compensation method comprises mask plate surface shape compensation and mask plate grid compensation, wherein the mask plate surface shape compensation is used for compensating the surface shape of a mask plate, and the mask plate grid compensation is used for compensating the grid direction on the mask plate. The compensation is realized through different modes, the surface shape of the substrate is the appearance of the upper surface of the substrate, the substrate grids are a plurality of areas which can be divided into grids on the substrate, the surface shape of the mask plate is the appearance of the upper surface of the mask plate, the grids of the mask plate are a plurality of areas which can be divided into grids on the mask plate, and the surface shape and the grids are respectively compensated to meet the requirement of exposure precision.
The substrate surface shape compensation is as follows: the surface shape of the substrate is disassembled into two-dimensional orthogonal polynomials to form a first expression, the substrate is compensated by the workpiece table and the objective lens group based on the first expression, and the compensation of the surface shape of the substrate can be realized by adjusting the relative positions of the projection objectives in the workpiece table and the objective lens group. For example, the first expression includes corresponding 0-order, 1-order cross quantities and other high-order quantities, the low-order compensation quantities such as 0-order, 1-order and 1-order cross quantities of the surface shape of the compensation substrate can be realized through the workpiece stage, the high-order quantities of the surface shape of the compensation substrate can be realized through the objective lens group, the compensation of the high-order quantities is specifically formed by splicing the respective low-order compensation quantities of the unit projection objectives in the objective lens group, and the high-order quantities are other data relationships relative to the low-order compensation quantities such as 0-order, 1-order and 1-order cross quantities.
The land grid compensation is: the grid on the substrate is disassembled into two-dimensional orthogonal polynomials to form a second expression, the grid is compensated by the workpiece table and the objective lens group based on the second expression, and the compensation of the grid of the substrate can be realized by adjusting the relative positions of the projection objective lenses in the workpiece table and the objective lens group. Similarly, the grid of the substrate can be disassembled into 0 order, 1 order cross amount and other high order amounts, that is, the second expression includes corresponding 0 order, 1 order cross amount and other high order amounts, the low order compensation amounts such as 0 order, 1 order and 1 order cross amount of the grid on the substrate can be compensated through the workpiece stage, the high order amount of the grid on the substrate is compensated through the objective lens group, the compensation of the high order amount can be specifically spliced by the respective low order compensation amounts of the unit projection objectives in the objective lens group, and the high order amount is other data relation relative to the low order compensation amounts such as 0 order, 1 order and 1 order cross amount.
When the vertical position and the posture of the workpiece table can be kept unchanged in the measuring process, the substrate measuring device is used for measuring the height of each position of the substrate in the middle of the horizontal moving process of the workpiece table; and after the horizontal position data of the workpiece table and the vertical height measured by the substrate measuring device synchronously correspond to each other, performing two-dimensional polynomial fitting on the height data within the range of each exposure field to obtain each group of fitting coefficients, namely the substrate surface shape measuring result of each exposure field. Measuring the horizontal position deviation of the substrate by a substrate measuring device, dividing each exposure field on the substrate into grids and arranging a substrate alignment mark before exposure; the workpiece table drives the substrate alignment marks to the lower part of the substrate measuring device, the substrate measuring device measures horizontal position deviation of the substrate alignment marks relative to the centers of the sensors, and the deviation of the substrate alignment marks relative to nominal positions under a coordinate system of the workpiece table is obtained after correction; and performing two-dimensional polynomial fitting on the offset in each exposure field based on the nominal position to obtain a fitting coefficient, namely the measurement result of the substrate grid in each exposure field.
The above orthogonal polynomial may take the form of Legendre polynomial or Chebyshev polynomial as a basis function.
The 1-dimensional legendre polynomial is of the form:
f0(x)＝1；
f1(x)＝x；
…
the 1-dimensional chebyshev polynomial is of the form:
f0(x)＝1；
f1(x)＝x；
f2(x)＝2·x2-1；
f3(x)＝4·x3-3·x；
f4(x)＝8·x4-8·x2+1；
f5(x)＝16·x5-20·x3+5；
the above basis functions are normalized in the range of [ -1, 1], namely x is more than or equal to-1 and less than or equal to 1, and after the reference on the substrate or the mask plate is determined, the x can represent any position on the substrate or the mask plate.
Any one-dimensional curve can be expressed as:
s(x)＝c0·f0+c1·f1+c2·f2+c3·f3+c4·f4+c5·f5…＝∑ci·fi
then the coefficient vector
It is possible to represent the curve in question,
i is expressed as polynomial order and is expanded to a 2-dimensional form, so that relative position data of any position on the substrate or the mask plate is obtained, corresponding numerical value relations are substituted into Legendre polynomial forms or Chebyshev polynomials to obtain respective two-dimensional orthogonal polynomials, and y-direction basis functions g are defined by adopting the same polynomialsi(y), the surface topography within any rectangular region can be expressed as:
W(x，y)＝c00·f0·g0+c01·f0·g1+c10·f1·g0+c02·f0·g2+c20·f2·g0+c11·f1·g1…＝∑cij·fi·gj
then the coefficient vector
The surface topography can be represented by a surface topography,
Further extend to the expression of distortion of the grid within an arbitrary rectangular region:
Tx(x，y)＝cx00·f0·g0+cx01·f0·g1+cx10·f1·g0+cx02·f0·g2+cx20·f2·g0+cx11·f1·g1…＝∑cxij·fi·gj
Ty(x，y)＝cy00·f0·g0+cy01·f0·g1+cy10·f1·g0+cy02·f0·g2+cy20·f2·g0+cy11·f1·g1…＝∑cyij·fi·gj
tensor of coefficient
It is possible to express the distortion of the grid,
and i + j is a polynomial order.
Based on the above orthogonal polynomial, the mask plate surface shape compensation is as follows: the mask plate is compensated by the mask reshaping device and the objective lens set based on the third expression, and the mask plate surface shape compensation can be realized by adjusting the relative positions of the mask plate and each projection objective lens in the objective lens set. For example, the compensation amount of the mask plate surface shape is split, the mask stage compensates 0-3 order amount and cross terms of the mask plate distortion, and the objective lens group compensates 1-3 order correction residue amount caused by splicing of the projection objective lenses.
Based on the above orthogonal polynomial, the reticle grid compensation may be: the grid on the mask plate is disassembled into two-dimensional orthogonal polynomials to form a fourth expression, the mask shaping device and the objective lens group compensate the mask plate based on the fourth expression, and mask plate grid compensation can be achieved by adjusting the relative positions of the mask plate and each projection objective lens in the objective lens group. For example, 0-3 orders of the grid on the mask plate and the cross terms can be compensated by the mask shaping device, and 1-3 orders of correction residual quantity caused by splicing of the projection objectives can be compensated by the projection objectives.
When the vertical position and the posture of the mask table can be kept unchanged in the measuring process, a mask plate measuring device is used for measuring the height of each position of a mask plate in the middle of the horizontal moving process of the mask table; and after the horizontal position data of the mask table and the vertical height measured by the mask plate measuring device synchronously correspond to each other, performing two-dimensional polynomial fitting on the height data within the range of the graph area to obtain a fitting coefficient, namely a mask surface shape measuring result. The mask alignment mark is driven to the position above the objective lens group by the mask platform, and the offset of the imaging position of the mask alignment mark relative to the nominal position is measured by a mask plate measuring device arranged on the workpiece platform; and performing two-dimensional polynomial fitting on the offset based on the nominal position to obtain a fitting coefficient, namely a mask grid measuring result.
The motion tracks of all movable mechanisms participating in synchronous scanning exposure in the exposure machine platform are planned according to an orthogonal polynomial mode, and each specific track is expressed by a polynomial coefficient; all the movable mechanisms comprise a linear transformation mechanism from a logic axis to a physical axis, track coefficients on the logic axis are described, and the track coefficients of each motor are obtained through the transformation mechanism; each motor corresponds to a respective track generator, and track coefficients are synchronously converted into position, speed and acceleration set values of each servo period in the scanning exposure process of the exposure device.
The invention also provides an exposure device, which at least comprises two exposure systems arranged in parallel by adopting the exposure method, wherein each exposure system comprises a mask platform system, a mask shaping system, a workpiece platform system, a mask measuring system, a substrate measuring system, a mask transmission system, a substrate transmission system and a frame system. The production of the materials with larger size is realized and completed by the exposure systems arranged in parallel, the precision requirement in the production process of the materials with larger size is ensured by the exposure method, and the combination and combination mode of all the components in each exposure system are arranged according to the exposure requirement and are not described too much.
In the exposure method, the measurement method and the exposure device provided by the invention, the exposure method obtains the distortion information of the surface shape information of the mask plate and the substrate, the position track coefficients of the workpiece table, the mask table and the space image are obtained through resolving according to the coordinate system relation, and the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track are determined through the compensation of the projection objective, the total surface shape compensation quantity of the workpiece table and the total grid deformation compensation quantity of the workpiece table, so that the planned track is synchronously executed by the executing mechanism during exposure, the whole exposure process is completed, the exposure precision is ensured, and the production quality is improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (12)
1. An exposure method, characterized in that the exposure method comprises:
arranging a mask plate on a mask table, and arranging a substrate on a workpiece table;
measuring the multi-point height of the upper surface of the substrate, and performing plane fitting to obtain the height and an inclined set value for globally leveling the workpiece table so as to enable the upper surface of the substrate to be superposed with the focal plane of the projection objective;
measuring to obtain surface shape information and distortion information of the pattern surface of the mask plate;
measuring to obtain the focal plane information of the projection objective;
measuring to obtain surface shape information and distortion information of the substrate;
obtaining a surface shape coefficient of a pattern surface of the mask plate, a surface shape coefficient of the upper surface of the substrate and a distortion coefficient of the pattern surface of the mask plate relative to a surface to be exposed of the substrate through two-dimensional orthogonal polynomial coefficient fitting, wherein the surface to be exposed of the substrate refers to a surface on which the pattern of the mask plate is exposed to form a mask image on the upper surface of the substrate;
according to the relative coordinate system relationship of the workpiece table, the mask table and the projection objective layout, resolving the surface shape coefficient of the pattern surface, the surface shape coefficient of the upper surface and the distortion coefficient of the pattern surface of the mask plate relative to the to-be-exposed surface of the substrate into position track coefficients of the workpiece table, the mask table and a space image, wherein the space image is an image of light intensity distribution formed on the substrate by a lighting device through the projection objective;
decomposing the surface shape of the substrate into a two-dimensional orthogonal polynomial expression, compensating 0-order quantity, 1-order quantity and 1-order cross quantity of the surface shape of the substrate by the workpiece platform, and compensating high-order quantity of the surface shape of the substrate by the projection objective;
resolving the distortion of the substrate into a two-dimensional orthogonal polynomial expression, and compensating the distortion of the substrate within three orders by a photoetching machine;
splitting the compensation quantity of the surface shape of the mask plate, compensating 0-3 order quantity of distortion of the mask plate by the mask table, and compensating 1-3 order correction residual quantity caused by splicing of the objective lens by the projection objective lens;
disassembling the grid of the substrate into a two-dimensional orthogonal polynomial expression, compensating 0-order quantity, 1-order quantity and 1-order crossing quantity of the grid of the substrate by the workpiece stage, and compensating high-order quantity of the grid of the substrate by the projection objective, wherein the grid of the substrate is a plurality of areas divided in the substrate;
disassembling grids of the mask plate into a two-dimensional orthogonal polynomial expression, compensating 0-3 orders of the grids of the mask plate by the mask table, compensating 1-3 orders of correction residual quantity caused by splicing of an objective lens by the projection objective lens, wherein the grids of the mask plate are a plurality of areas divided in the mask plate;
combining the compensation quantity of the workpiece table to the surface shape of the substrate and the compensation quantity of the mask table to the surface shape of the mask plate to obtain the total surface shape compensation quantity of the workpiece table, and performing orthogonal polynomial fitting on the surface shape compensation quantities of the workpiece table, the mask table and the projection objective to obtain vertical orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective;
combining the compensation quantity of the workpiece table to the grid of the substrate and the compensation quantity of the mask table to the grid of the mask plate to obtain the total grid deformation compensation quantity of the workpiece table, and performing orthogonal polynomial fitting on the grid deformation compensation quantities of the workpiece table, the mask table and the projection objective to obtain the horizontal orthogonal polynomial motion tracks of the workpiece table, the mask table and the projection objective;
and sending track coefficients of the vertical orthogonal polynomial motion track and the horizontal orthogonal polynomial motion track to an executing mechanism, and synchronously executing the planned track by the executing mechanism during exposure.
2. The exposure method according to claim 1, wherein the position trajectory coefficient of the aerial image is converted into a joint trajectory coefficient of a plurality of movable mechanisms inside the projection objective based on a sensitivity matrix of the projection objective.
3. The exposure method according to claim 1, wherein the projection objective compensates for the high-order amount of the surface shape of the substrate by splicing the low-order compensation amounts of the respective unit projection objectives.
4. The exposure method according to claim 1, wherein the projection objective compensates for the high-order amount of the grid of the substrate by a concatenation of the respective low-order compensation amounts of the unit projection objectives.
5. The exposure method according to claim 1, wherein the mask stage is provided with a mask shaping device by which the mask plate is shaped.
6. The exposure method according to claim 5, wherein the mask shaping device includes a shaping cover including a cover body having a transparent window and a seal ring provided on the cover body, the cover body covering the mask plate carried by the mask stage and forming a closed space by the seal ring.
7. A measuring method for the exposure method according to any one of claims 1 to 6, the measuring method comprising:
the vertical position and the posture of the mask table are kept unchanged in the measuring process, and the vertical height of each position of the mask plate is measured by using a mask measuring system in the middle of the horizontal moving process of the mask table;
synchronously corresponding the horizontal position data of the mask table and the vertical height measured by the mask measuring system, and then carrying out two-dimensional polynomial fitting on the height data in the graphic area range to obtain a surface shape measuring result of the mask plate;
the vertical position and the posture of the workpiece table are kept unchanged in the measuring process, and the vertical height of each position of the substrate is measured by using a substrate measuring system in the middle of the horizontal moving process of the workpiece table;
synchronously corresponding the horizontal position data of the workpiece platform and the vertical height measured by the substrate measuring system, and then carrying out two-dimensional polynomial fitting on the height data in each exposure field range to obtain the surface shape measuring result of the substrate of each exposure field;
arranging mask alignment marks in a pattern area of the mask plate, wherein the pattern area of the mask plate can be divided into a plurality of areas and the mask alignment marks are distributed, the mask stage drives the mask alignment marks to be right above a projection objective, measuring the offset of the imaging position of the mask alignment marks relative to a nominal position by using a coaxial alignment sensor arranged on the workpiece stage, and performing two-dimensional polynomial fitting on the offset based on the nominal position to obtain a distortion measurement result of the mask plate;
driving a reference mark plate of the workpiece table to be right below an off-axis alignment sensor, and measuring horizontal position deviation of the center of the off-axis alignment sensor relative to each corresponding reference mark on the reference mark plate;
manufacturing a substrate alignment mark in each exposure field on the substrate, dividing each exposure field on the substrate into a plurality of areas and arranging the substrate alignment mark;
the workpiece table drives the substrate alignment mark to be right below the off-axis alignment sensor, the off-axis alignment sensor measures horizontal position deviation of the substrate alignment mark relative to the center of the sensor, offset of the substrate alignment mark relative to a nominal position under a workpiece table coordinate system is obtained after correction, two-dimensional polynomial fitting is carried out on the offset in each exposure field based on the nominal position, and distortion measurement results of the exposure fields are obtained.
8. The measurement method of claim 7, wherein the mask alignment mark is in a grid shape; the substrate alignment mark is in a grid shape.
9. The measurement method of claim 7, further comprising: the mask stage drives an object-side reference plate over the projection objective, capturing an aerial image of the marks by a sensor array.
10. The measurement method of claim 7, further comprising: and vertically moving the workpiece platform, acquiring spatial image contrast, and determining the height of the workpiece platform as a measurement result of the focal plane height.
11. The measurement method according to claim 7, wherein the mask stage is driven by a mask stage driving device, the mask stage driving device including a first driving device and a second driving device, and a minimum moving distance of the first driving device is 10 times or more a minimum moving distance of the second driving device.
12. An exposure apparatus employing the exposure method according to any one of claims 1 to 5, comprising at least two exposure systems arranged in parallel, each of the exposure systems comprising a mask stage system, a mask shaping system, a workpiece stage system, a mask measurement system, a substrate measurement system, a mask transfer system, a substrate transfer system, and a frame system.
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